CN117316811A - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
- Publication number
- CN117316811A CN117316811A CN202311021067.9A CN202311021067A CN117316811A CN 117316811 A CN117316811 A CN 117316811A CN 202311021067 A CN202311021067 A CN 202311021067A CN 117316811 A CN117316811 A CN 117316811A
- Authority
- CN
- China
- Prior art keywords
- input port
- wafer cleaning
- solution
- flow control
- nozzle body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 239000003814 drug Substances 0.000 claims abstract description 33
- 238000002156 mixing Methods 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 34
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 229910001868 water Inorganic materials 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 238000012360 testing method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer cleaning device which comprises a nozzle, wherein the nozzle comprises a nozzle body, the nozzle body is provided with at least two input ports, and a flow control valve is arranged at the position of each input port. The beneficial effects of the invention are as follows: the nozzle of the invention can rapidly correspond to different processes and process problems, and simultaneously assist in developing new processes, shorten the liquid medicine blending time, reduce the liquid medicine test dosage, improve the equipment utilization ratio and reduce the engineering production cost.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a wafer cleaning device.
Background
At present, the existing mechanisms for mixing, concentration adjustment and temperature adjustment of wafer cleaning liquid are all mixed and allocated in a device supply tank or a mixing tank of a factory power end.
The existing blending mode has poor corresponding capability to the process, and when the metal ions or the metal silicide residues are excessive, the matching of the liquid medicine cannot be adjusted in time. The drawbacks of the prior art include in particular:
1. the supply of new liquid medicine has great influence on the utilization of equipment.
2. The test of new liquid medicine is too long for the adjustment of the process and the adjustment parameters cannot be refined.
3. The test of new liquid medicine is excessively wasteful for the use amount of the liquid medicine, and the manufacturing cost is increased.
4. The matching and concentration of the liquid medicine cannot be adjusted in real time with APC (factory monitoring data).
Disclosure of Invention
The invention provides a wafer cleaning device which comprises a nozzle, wherein the nozzle comprises a nozzle body, the nozzle body is provided with at least two input ports, and a flow control valve is arranged at the position of each input port.
As a further development of the invention, the nozzle body is internally threaded.
As a further improvement of the invention, the nozzle body is internally provided with a temperature control module, and the temperature control module is used for controlling the temperature of the liquid medicine.
As a further improvement of the present invention, the number of the flow control valves is two, the number of the two flow control valves is a first flow control valve and a second flow control valve, the number of the input ports is two, the number of the two input ports is a first input port and a second input port, the first flow control valve is installed at the first input port position, and the second flow control valve is installed at the second input port position.
As a further improvement of the invention, the liquid medicine flows into the nozzle body through the first input port and the second input port, the liquid medicine is formed by mixing two solutions, the first solution is acid solution or alkali solution, and the second solution is deionized water.
As a further improvement of the invention, the first solution is nitric acid and hydrofluoric acid.
As a further improvement of the invention, the liquid medicine flows into the nozzle body through the first input port and the second input port, the liquid medicine is formed by mixing two solutions, the first solution is hydrochloric acid or ammonia water, and the second solution is hydrogen peroxide.
As a further improvement of the invention, the wafer is made of silicon material, nitric acid reacts with silicon to form SiO2, siO2 is reacted with hydrofluoric acid to form fluosilicic acid which is dissolved in water, and the mass percent of the liquid medicine is as follows: 68.9% of nitric acid, 0.8% of hydrofluoric acid and 30.3% of deionized water.
As a further improvement of the invention, the standard proportion of the aqueous solution of hydrochloric acid and hydrogen peroxide is HCl/H2O2/H2O, and the proportion is as follows: 1:1:6 to 1:2:8.
As a further improvement of the invention, the standard proportion of the aqueous solution of ammonia water and hydrogen peroxide is NH4OH/H2O2/H2O, and the proportion is as follows: 1:1:5 to 1:2:7.
The beneficial effects of the invention are as follows: the nozzle of the invention can rapidly correspond to different processes and process problems, and simultaneously assist in developing new processes, shorten the liquid medicine blending time, reduce the liquid medicine test dosage, improve the equipment utilization ratio and reduce the engineering production cost.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Detailed Description
As shown in fig. 1, the invention discloses a wafer cleaning device, which comprises a nozzle, wherein the nozzle comprises a nozzle body 1, the nozzle body 1 is provided with at least two input ports, and a flow control valve is arranged at the position of the input ports.
The nozzle body 1 is internally provided with threads.
The inside temperature control module that is equipped with of nozzle body 1 is used for controlling the temperature of liquid medicine. The stable liquid medicine can be heated, the unstable liquid medicine can be mixed, and the temperature control module can be used for rapidly heating the liquid medicine in the nozzle body 1, so that precise temperature control is achieved, the evaporation amount of the liquid medicine is reduced, and the consumption corrosion of a pipeline component is reduced.
As a preferred embodiment of the nozzle, the number of the flow control valves is two, the number of the two flow control valves is a first flow control valve and a second flow control valve, the number of the input ports is two, the number of the two input ports is a first input port 2 and a second input port 3, the first flow control valve is arranged at the position of the first input port 2, and the second flow control valve is arranged at the position of the second input port 3.
As an embodiment of the present invention, the chemical solution flows into the nozzle body 1 through the first input port 2 and the second input port 3, the chemical solution is formed by mixing two solutions, the first solution is an acid solution or an alkali solution (for example, the first solution is nitric acid and hydrofluoric acid), and the second solution is deionized water. By the nozzle, before the wafer cleaning process, a precise flow control valve is used for preparing the silicon wafer to reach a specific concentration, nitric acid (HNO 3) and silicon (Si) can be reacted to form SiO2, the SiO2 is reacted by hydrofluoric acid (HF) to form fluosilicic acid (H2 SiF 6) which is dissolved in water to be taken away, and the silicon surface can be reacted by the liquid medicine to form a chamfer. In this embodiment, the liquid medicine comprises the following components in percentage by mass: 68.9% of nitric acid, 0.8% of HF and 30.3% of deionized water.
As another embodiment of the present invention, the liquid medicine flows into the nozzle body 1 through the first input port 2 and the second input port 3, the liquid medicine is formed by mixing two solutions, the first solution is hydrochloric acid or ammonia water, and the second solution is hydrogen peroxide. The liquid medicine of ammonia water and hydrogen peroxide can remove foreign matters on the surface of a silicon wafer, the aqueous solution of ammonia water and hydrogen peroxide is generally called SC1, and the standard ratio is NH4OH/H2O2/H2O, and the ratio is: 1:1:5 to 1:2:7. Hydrochloric acid and hydrogen peroxide liquid medicine, wherein the liquid medicine can remove metal ions on the surface of a silicon wafer, the aqueous solution of the hydrochloric acid and the hydrogen peroxide is generally called SC2, and the standard ratio is HCl/H2O2/H2O, and the ratio is: 1:1:6 to 1:2:8. The nozzle of the invention can be used for preparing the precise flow control valve before the wafer cleaning process, so as to achieve the specific concentration of the SC-1 liquid medicine and achieve the optimal cleaning effect.
Because the screw thread is arranged in the nozzle body 1, after two solutions enter the nozzle body 1, the two solutions can be quickly mixed into a medicinal liquid with the aid of the screw thread.
In the present invention, the flow rates of the first solution and the second solution flowing into the nozzle body 1 can be controlled by the first flow rate control valve and the second flow rate control valve, thereby preparing a chemical solution of a prescribed concentration.
The nozzle of the invention can rapidly correspond to different processes and process problems, and simultaneously assist in developing new processes, shorten the liquid medicine blending time, reduce the liquid medicine test dosage, improve the equipment utilization ratio and reduce the engineering production cost.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. The wafer cleaning device is characterized by comprising a nozzle, wherein the nozzle comprises a nozzle body (1), the nozzle body (1) is provided with at least two input ports, and a flow control valve is arranged at the position of each input port.
2. Wafer cleaning device according to claim 1, characterized in that the nozzle body (1) is internally threaded.
3. Wafer cleaning device according to claim 1 or 2, characterized in that the nozzle body (1) is internally provided with a temperature control module for controlling the temperature of the liquid medicine.
4. The wafer cleaning apparatus according to claim 1, wherein the number of the flow control valves is two, the number of the two flow control valves is a first flow control valve and a second flow control valve, the number of the input ports is two, the number of the two input ports is a first input port (2) and a second input port (3), the first flow control valve is installed at a position of the first input port (2), and the second flow control valve is installed at a position of the second input port (3).
5. The wafer cleaning device according to claim 4, wherein a chemical liquid flows into the nozzle body (1) through the first input port (2) and the second input port (3), the chemical liquid is formed by mixing two solutions, the first solution is an acid solution or an alkali solution, and the second solution is deionized water.
6. The wafer cleaning apparatus of claim 5, wherein the first solution is nitric acid and hydrofluoric acid.
7. The wafer cleaning apparatus according to claim 4, wherein a chemical liquid flows into the nozzle body (1) through the first input port (2) and the second input port (3), the chemical liquid is formed by mixing two solutions, the first solution is hydrochloric acid or ammonia water, and the second solution is hydrogen peroxide.
8. The wafer cleaning apparatus according to claim 6, wherein the wafer is made of silicon material, nitric acid reacts with silicon to form SiO2, siO2 is reacted with hydrofluoric acid to form fluosilicic acid, and the fluosilicic acid is dissolved in water, and the liquid medicine comprises the following components in percentage by mass: 68.9% of nitric acid, 0.8% of hydrofluoric acid and 30.3% of deionized water.
9. The wafer cleaning apparatus of claim 7, wherein the aqueous solution of hydrochloric acid and hydrogen peroxide has a standard ratio of HCl/H2O2/H2O, and the ratio is: 1:1:6 to 1:2:8.
10. The wafer cleaning apparatus of claim 7, wherein the aqueous solution of ammonia and hydrogen peroxide has a standard ratio of NH4OH/H2O 2/H2O: 1:1:5 to 1:2:7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311021067.9A CN117316811A (en) | 2023-08-14 | 2023-08-14 | Wafer cleaning device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311021067.9A CN117316811A (en) | 2023-08-14 | 2023-08-14 | Wafer cleaning device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN117316811A true CN117316811A (en) | 2023-12-29 |
Family
ID=89287306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311021067.9A Pending CN117316811A (en) | 2023-08-14 | 2023-08-14 | Wafer cleaning device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN117316811A (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200331603Y1 (en) * | 2003-07-25 | 2003-11-05 | 한국표준과학연구원 | Fluid mixture injection nozzle |
KR20050100260A (en) * | 2004-04-13 | 2005-10-18 | 블루버드환경 주식회사 | External-mix type nozzle assembly for selective catalytic reduction system |
WO2010097896A1 (en) * | 2009-02-24 | 2010-09-02 | アクアサイエンス株式会社 | Cleaning nozzle and cleaning method |
KR20110029593A (en) * | 2009-09-16 | 2011-03-23 | 세메스 주식회사 | Apparatus and method of supplying solution |
KR101558822B1 (en) * | 2014-12-23 | 2015-10-08 | 장윤근 | Turbulence flow using chemical rapid blending device |
KR20180099029A (en) * | 2017-02-28 | 2018-09-05 | (주) 엔피홀딩스 | Substract cleaning apparatus for removal photoresist and method using the same |
-
2023
- 2023-08-14 CN CN202311021067.9A patent/CN117316811A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200331603Y1 (en) * | 2003-07-25 | 2003-11-05 | 한국표준과학연구원 | Fluid mixture injection nozzle |
KR20050100260A (en) * | 2004-04-13 | 2005-10-18 | 블루버드환경 주식회사 | External-mix type nozzle assembly for selective catalytic reduction system |
WO2010097896A1 (en) * | 2009-02-24 | 2010-09-02 | アクアサイエンス株式会社 | Cleaning nozzle and cleaning method |
KR20110029593A (en) * | 2009-09-16 | 2011-03-23 | 세메스 주식회사 | Apparatus and method of supplying solution |
KR101558822B1 (en) * | 2014-12-23 | 2015-10-08 | 장윤근 | Turbulence flow using chemical rapid blending device |
KR20180099029A (en) * | 2017-02-28 | 2018-09-05 | (주) 엔피홀딩스 | Substract cleaning apparatus for removal photoresist and method using the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100639710B1 (en) | Method for liquid mixing supply | |
JP2007517413A (en) | Apparatus and method for selective etching of silicon nitride during substrate processing | |
KR101263537B1 (en) | Point-of-use process control blender systems and corresponding methods | |
KR20090102640A (en) | Substrate treating apparatus and substrate treating method | |
JP5527502B2 (en) | Hot ultrapure water supply use point piping startup cleaning method | |
CN117316811A (en) | Wafer cleaning device | |
EP1029581A1 (en) | Method for preventing scaling in wet-process waste gas treatment equipment | |
US20030116174A1 (en) | Semiconductor wafer cleaning apparatus and cleaning method using the same | |
CN213988838U (en) | Wet cleaning equipment with concentration self-adjusting function | |
US6267142B1 (en) | Fluid delivery stablization for wafer preparation systems | |
CN212396505U (en) | Production line for silicon dioxide corrosion prewetting impregnating solution | |
KR20060095640A (en) | Method and apparatus for liquid mixing supply | |
JPH0737851A (en) | Cleaning device | |
CN109037119B (en) | Etching device | |
JP7099603B1 (en) | Liquid supply equipment for semiconductor manufacturing | |
CN112530790A (en) | Wafer cleaning device and wafer cleaning method | |
JP2022087686A (en) | Cleaning chemical solution supply device and cleaning chemical solution supply method | |
KR100841085B1 (en) | A liquid supply apparatus | |
KR100521312B1 (en) | Chemical supply device for wet etching device for semiconductor device manufacturing and chemical supply method using same | |
CN210778499U (en) | Machine cavity monitoring device | |
CN115016572A (en) | Temperature control system and method applied to wet etching cleaning machine | |
WO2021181730A1 (en) | Dilute chemical supply device | |
CN114733436A (en) | Adjustable mixing equipment and adjustable mixing method | |
JP2024004752A (en) | Substrate processing method and substrate processing device | |
CN117316812A (en) | Wafer cleaning machine and wafer carrying method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |