KR100521312B1 - Chemical supply device for wet etching device for semiconductor device manufacturing and chemical supply method using same - Google Patents

Chemical supply device for wet etching device for semiconductor device manufacturing and chemical supply method using same Download PDF

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KR100521312B1
KR100521312B1 KR1019970046807A KR19970046807A KR100521312B1 KR 100521312 B1 KR100521312 B1 KR 100521312B1 KR 1019970046807 A KR1019970046807 A KR 1019970046807A KR 19970046807 A KR19970046807 A KR 19970046807A KR 100521312 B1 KR100521312 B1 KR 100521312B1
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chemical
chemical supply
buffer tank
wet etching
air valve
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KR19990025245A (en
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강봉원
정금용
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삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching

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Abstract

본 발명은 반도체소자 제조공정에서 세정공정과 식각공정에 사용되는 습식식각장치의 케미컬 공급장치에 관한 것이다.The present invention relates to a chemical supply apparatus for a wet etching apparatus used in a cleaning process and an etching process in a semiconductor device manufacturing process.

본 발명은, 케미컬공급원에서 공급받은 케미컬을 예비로 담아두는 버퍼탱크; 상기 버퍼탱크로부터 케미컬을 공급받아 순수와 혼합하여 희석시키는 희석탱크; 에어벨브를 구비하고 상기 버퍼탱크의 하단부에 형성된 케미컬방출관; 및 케미컬공급원에서 연장형성되어 상기 케미컬방출관내의 에어벨브 가까이까지 도달된 케미컬공급관을 구비하여 이루어진다.The present invention, the buffer tank for preliminary containing the chemical supplied from the chemical supply source; A dilution tank receiving the chemical from the buffer tank and diluting by mixing with pure water; A chemical discharge tube having an air valve and formed at a lower end of the buffer tank; And a chemical supply pipe extending from the chemical supply source and reaching near to the air valve in the chemical discharge pipe.

따라서, 습식식각공정에서 케미컬방출관내의 기포발생을 억제하여 정확한 케미컬량을 공급하므로서 케미컬의 희석비를 정확히 하여 식각 균일도를 향상시키는 것을 가능하게 해주는 효과가 있다.Therefore, it is possible to improve the etching uniformity by accurately adjusting the dilution ratio of the chemicals by supplying an accurate chemical amount by suppressing bubble generation in the chemical discharge tube in the wet etching process.

Description

반도체 소자 제조용 습식 식각 장치의 케미컬 공급장치 및 이를 이용한 케미컬 공급방법Chemical supply device for wet etching device for semiconductor device manufacturing and chemical supply method using same

본 발명은 반도체소자 제조용 습식식각장치의 케미컬 공급장치에 관한 것으로서, 보다 상세하게는 케미컬공급관 내부의 기포발생을 억제하여 정확한 케미컬량을 공급하므로서, 희석케미컬의 희석비를 정확히 하여 세정력 및 식각 균일도를 향상시키는 반도체소자 제조용 습식식각장치의 케미컬 공급장치에 관한 것이다.The present invention relates to a chemical supply device for a wet etching device for manufacturing a semiconductor device, and more particularly, to suppress bubbles in the chemical supply pipe and to supply an accurate chemical amount, thereby accurately cleaning the dilution ratio of the dilution chemical to improve cleaning power and etching uniformity. The present invention relates to a chemical supply device for a wet etching device for manufacturing a semiconductor device.

반도체소자의 제조는 실리콘 웨이퍼위에 확산, 사진, 식각, 세정 및 이온주입등 일련의 공정을 수행하여 이루어 진다. 상기 공정에서는 케미컬이 많이 이용되고 있으며, 이중 습식식각공정, 습식세정공정에서 많이 이용되고 있다.The semiconductor device is manufactured by performing a series of processes such as diffusion, photography, etching, cleaning, and ion implantation on a silicon wafer. In the above process, a lot of chemicals are used, and a double wet etching process and a wet cleaning process are used.

습식식각공정은 적정온도의 케미컬들을 혼합한 식각용액 혹은 케미컬원액을 순수에 희석한 식각용액을 사용하여 폴리실리콘막, 산화막 및 질화막 등을 제거하는 공정이다. 습식세정공정 또한 특정온도의 수산화암모늄(NH4OH), 과산화수소(H2O2) 및 순수(H2O)가 적정 혼합비로 혼합된 세정액 혹은 순수에 높은 비율(HF:H2O=100:1 ~ 1000:1)로 희석시킨 HF 용액등을 세정액으로 사용하여 웨이퍼 표면에 부착된 폴리머, 파티클 및 중금속 등과 같은 오염물질을 제거한다. 그러므로 케미컬들을 혼합하여 사용하는 상기의 습식식각공정과 습식세정공정에서 케미컬들의 혼합비는 상당히 중요한 변수이다. 정확한 혼합비가 항상 유지되지 않고 경우에 따라서 변하는 경우 웨이퍼의 세정력은 저하되고, 식각률은 균일하지 않아 정확한 식각을할 수 없게된다.In the wet etching process, a polysilicon film, an oxide film, and a nitride film are removed by using an etching solution in which chemicals at appropriate temperatures are mixed or an etching solution obtained by diluting a chemical stock solution with pure water. In the wet cleaning process, ammonium hydroxide (NH 4 OH), hydrogen peroxide (H 2 O 2), and pure water (H 2 O) at a specific temperature are diluted in a high ratio (HF: H 2 O = 100: 1 to 1000: 1) in a cleaning solution or pure water mixed in an appropriate mixing ratio. HF solution or the like is used as a cleaning liquid to remove contaminants such as polymers, particles and heavy metals attached to the wafer surface. Therefore, the mixing ratio of the chemicals in the wet etching process and the wet cleaning process in which the chemicals are mixed is a very important variable. If the correct mixing ratio is not always maintained and sometimes changes, the cleaning power of the wafer is lowered, and the etching rate is not uniform, so that accurate etching is impossible.

따라서 케미컬량은 항상 같은량이 공급되어야 한다. 특히 순수와 적은비율로 희석하여 사용하는 소량의 케미컬들의 공급량은 더더욱 정확히 조절되어야 한다. 이러한 공정들은 모두 습식식각장치에서 이루어지게 된다.Therefore, the same amount of chemical should always be supplied. In particular, the supply of a small amount of chemicals diluted with pure water and small ratio should be controlled more accurately. These processes are all done in wet etching.

도 1 은 종래의 방법에 의한 습식식각장치의 케미컬 공급장치의 모습을 보여주는 개략적인 구성도이다.1 is a schematic diagram showing a state of a chemical supply apparatus of a wet etching apparatus according to a conventional method.

도 1 에서 보여주는 바와 같이 식각용액으로 사용되는 케미컬을 케미컬 공급관(10)을 통해 버퍼탱크(12)에 원하는 량을 공급한 다음 에어벨브(22)를 닫아 공급을 마친다. 다음 상기 케미컬은 에어벨브(14)가 열리면서 케미컬방출관(13)을 통해 희석탱크(16)로 공급된다. 버퍼탱크(12)의 케미컬이 케미컬희석탱크(16)로 모두 공급되면 에어벨브(14)는 닫히고 다시 케미컬은 케미컬공급관(10)을 통해 버퍼탱크(12)에 공급한다. 희석용액으로 쓰이는 순수도 순수 공급관(18)을 통해 희석탱크(16)로 적당량을 공급한 후 에어벨브(20)를 닫아 공급을 마친다. 상기의 과정이 반복되면서 케미컬을 계속 공급한다. 그런데 상기의 버퍼탱크(12)의 케미컬이 모두 희석탱크(16)로 공급된 다음 버퍼탱크(12) 하단부와 에어벨브(14)에 이르는 케미컬방출관(13)에는 케미컬이 전혀없고 공기만이 존제하는 상태가 된다. 이러한 상태에서 버퍼탱크(12)와 케미컬방출관 (13)에 케미컬이 공급되게 되면 케미컬방출관(13) 내부에 존제하던 공기가 완전히 빠져 나가 못하고 기포로서 존제하게 된다. 이러한 기포의 발생은 희석탱크(16)로 공급되는 케미컬량을 변화시킨다. 즉, 소량을 사용하는 희석케미컬의 희석비를 변화시켜 상기 희석용액의 식각비를 변화시키는 문제점을 야기시킨다. 이러한 문제는 웨이퍼 상의 적정한 식각균일도를 유지시키지 못해 공정에 심각한 문제를 일으키는 원인이 된다.As shown in FIG. 1, the chemical used as an etching solution is supplied to the buffer tank 12 through the chemical supply pipe 10, and then the air valve 22 is closed to finish the supply. The chemical is then supplied to the dilution tank 16 through the chemical discharge tube 13 while the air valve 14 is opened. When all of the chemicals in the buffer tank 12 are supplied to the chemical dilution tank 16, the air valve 14 is closed and the chemical is supplied to the buffer tank 12 through the chemical supply pipe 10 again. After supplying an appropriate amount to the dilution tank 16 through the pure water supply pipe 18 used as the dilution solution, the air valve 20 is closed to finish the supply. The above process is repeated to continue supplying the chemical. However, all of the chemicals in the buffer tank 12 are supplied to the dilution tank 16, and then there is no chemical at all in the chemical discharge pipe 13 leading to the lower end of the buffer tank 12 and the air valve 14. It becomes the state to do. When the chemical is supplied to the buffer tank 12 and the chemical discharge tube 13 in this state, the air existing in the chemical discharge tube 13 is not completely escaped and is present as bubbles. The occurrence of such bubbles changes the amount of chemical supplied to the dilution tank 16. That is, the dilution ratio of the dilution chemical using a small amount causes a problem of changing the etching ratio of the dilution solution. These problems can lead to serious problems with the process due to inadequate etch uniformity on the wafer.

본 발명의 목적은, 상기 종래기술의 문제점을 해결하기 위한 것으로서, 정확한 케미컬량을 공급하므로서 희석케미컬의 식각 균일도를 향상시키는 반도체소자 제조용 습식식각장치의 케미컬 공급장치를 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a chemical supply apparatus for a wet etching apparatus for manufacturing a semiconductor device which improves the etching uniformity of a diluted chemical while supplying an accurate chemical amount.

본 발명의 구체적인 목적은 케미컬공급관을 길게하여 케미컬방출관 내부의 기포발생을 억제하여 정확한 케미컬량을 공급하므로서 식각 균일도를 향상시키는 반도체소자 제조용 습식식각장치의 케미컬 공급장치를 제공하는데 있다.A specific object of the present invention is to provide a chemical supply apparatus of a wet etching apparatus for manufacturing a semiconductor device for improving the etching uniformity by supplying an accurate chemical amount by suppressing the bubble generation inside the chemical discharge tube by lengthening the chemical supply pipe.

상기 목적을 달성하기 위한 본 발명에 따른 반도체소자 제조공정에서 세정공정과 식각공정에 사용되는 반도체소자 제조용 습식식각장치의 케미컬 공급장치는 케미컬공급원에서 공급받은 케미컬을 예비로 담아두는 버퍼탱크, 상기 버퍼탱크로부터 케미컬을 공급받아 순수와 혼합하여 희석시키는 희석탱크, 에어벨브를 구비하고 상기 버퍼탱크의 하단부에 형성된 케미컬방출관 및 케미컬공급원에서 연장형성되어 상기 케미컬방출관내의 에어벨브 가까이까지 도달된 케미컬공급관을 구비하여 이루어진다.In the semiconductor device manufacturing process according to the present invention for achieving the above object, the chemical supply device of the wet etching device for the semiconductor device manufacturing used in the cleaning process and the etching process, the buffer tank for preliminarily containing the chemical supplied from the chemical supply source, the buffer A chemical supply pipe having a dilution tank and an air valve which receives the chemical from the tank and mixes it with the pure water and dilutes it and extends from the chemical supply source formed at the lower end of the buffer tank and reaches near the air valve in the chemical discharge pipe. It is provided with.

상기 희석탱크는 바람직하게 하단부에는 베쓰로 통하는 희석케미컬 방출관이 형성되는 것이 바람직하다.The dilution tank is preferably formed at the lower end of the dilution chemical discharge tube leading to the bath.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2 는 본 발명에 의한 습식식각장치의 케미컬 공급장치의 모습을 보여주는 개략적인 구성도이다.Figure 2 is a schematic diagram showing the appearance of the chemical supply of the wet etching apparatus according to the present invention.

도 2 에서 보여주는 바와 같이 식각용액으로 사용되는 케미컬을 케미컬 공급관(30)을 통해 버퍼탱크(32)에 원하는 량을 공급한 다음 에어벨브(42)를 닫아 공급을 마친다. 다음 상기 케미컬은 에어벨브(34)가 열리면서 케미컬방출관(33)을 통해 희석탱크(36)로 공급된다. 버퍼탱크(32)의 케미컬이 희석탱크(36)로 모두 공급되면 에어벨브(34)는 닫히고 다시 케미컬은 케미컬 공급관(30)을 통해 버퍼탱크(32)에 공급한다. 희석용액으로 쓰이는 순수도 순수 공급관(38)을 통해 희석탱크(36)로 적당량을 공급한 후 에어벨브(40)를 닫아 공급을 마친다. 상기의 과정이 반복되면서 케미컬을 계속 공급한다. 그러므로 도 2 에서 보여주는 바와 같이 케미컬 공급관(30)이 버퍼탱크(32) 하단부를 거쳐 에어벨브(34)에 이르는 곳까지 도달하게 하여 즉, 케미컬을 에어벨브(34) 가까이 부터 공급함에 따라 도 1 의 종래의 방법에 의한 케미컬방출관(13)의 내부공기에 의한 기포의 발생을 억제시켜 정확한 케미컬량을 희석탱크로 공급할 수 있다.As shown in FIG. 2, the chemical used as an etching solution is supplied to the buffer tank 32 through the chemical supply pipe 30, and then the air valve 42 is closed to finish the supply. The chemical is then supplied to the dilution tank 36 through the chemical discharge pipe 33 while the air valve 34 is opened. When all of the chemicals in the buffer tank 32 are supplied to the dilution tank 36, the air valve 34 is closed and again the chemical is supplied to the buffer tank 32 through the chemical supply pipe 30. After supplying an appropriate amount to the dilution tank 36 through the pure water supply pipe 38, which is used as the dilution solution, the air valve 40 is closed to finish the supply. The above process is repeated to continue supplying the chemical. Therefore, as shown in FIG. 2, the chemical supply pipe 30 reaches the air valve 34 through the lower end of the buffer tank 32, that is, as the chemical is supplied from near the air valve 34. The generation of air bubbles by the internal air of the chemical discharge tube 13 according to the conventional method can be suppressed to supply an accurate chemical amount to the dilution tank.

따라서, 본 발명에 의하면 상술한 바와 같이 케미컬공급관을 버퍼탱크로 부터 케미컬을 희석탱크에 공급하는 케미컬방출관 내부의 에어벨브 가까이까지 위치하도록하여 케미컬을 버퍼탱크에 공급시 케미컬방출관내의 기포발생을 억제하여 정확한 케미컬량을 공급하므로서 케미컬의 희석비를 정확히 하여 식각 균일도를 향상시키는 효과가 있다.Therefore, according to the present invention, as described above, the chemical supply pipe is positioned from the buffer tank to the air valve inside the chemical discharge pipe for supplying the chemical to the dilution tank, thereby generating bubbles in the chemical discharge pipe when the chemical is supplied to the buffer tank. By suppressing and supplying an accurate chemical amount, the dilution ratio of the chemical is corrected, thereby improving the etching uniformity.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

도 1 은 종래의 방법에 의한 습식식각장치의 케미컬 공급장치의 모습을 보여주는 개략적인 구성도이다.1 is a schematic diagram showing a state of a chemical supply apparatus of a wet etching apparatus according to a conventional method.

도 2 는 본 발명에 의한 습식식각장치의 케미컬 공급장치의 모습을 보여주는 개략적인 구성도이다.Figure 2 is a schematic diagram showing the appearance of the chemical supply of the wet etching apparatus according to the present invention.

※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing

30 ; 케미컬 공급관 32 ; 버퍼탱크30; Chemical feed line 32; Buffer tank

33 ; 케미컬방출관 34, 40, 42 ; 에어벨브33; Chemical discharge tubes 34, 40, 42; Air valve

36 ; 희석탱크 38 ; 순수 공급관36; Dilution tank 38; Pure water supply pipe

Claims (2)

반도체소자 제조공정에서 세정공정과 식각공정에 사용되는 반도체소자 제조용 습식식각장치의 케미컬 공급장치에 있어서,In the chemical supply apparatus of the wet etching device for manufacturing a semiconductor device used in the cleaning process and the etching process in the semiconductor device manufacturing process, 케미컬공급원에서 공급받은 케미컬을 예비로 담아두는 버퍼탱크;A buffer tank for preliminarily storing chemicals supplied from a chemical source; 상기 버퍼탱크로부터 케미컬을 공급받아 순수와 혼합하여 희석시키는 희석탱크;A dilution tank receiving the chemical from the buffer tank and diluting by mixing with pure water; 에어벨브를 구비하고 상기 버퍼탱크의 하단부로부터 상기 희석탱크까지 연결된 케미컬방출관; 및A chemical discharge pipe having an air valve and connected from the lower end of the buffer tank to the dilution tank; And 상기 케미컬공급원으로부터 상기 버퍼탱크를 관통한 후 상기 에어벨브까지 도달되도록 그러나 상기 에어밸브와는 직접적으로 접촉하지 않도록 상기 케미컬방출관과 일체로 형성된 케미컬공급관;A chemical supply pipe integrally formed with the chemical discharge pipe so as to reach the air valve after passing through the buffer tank from the chemical supply source, but not in direct contact with the air valve; 을 구비하여 이루어지는 것을 특징으로 하는 반도체소자 제조용 습식식각장치의 케미컬 공급장치.Chemical supply apparatus of a wet etching device for manufacturing a semiconductor device, characterized in that comprises a. 제 1 항의 반도체소자 제조용 습식식각장치의 케미컬공급장치를 이용한 케미컬 공급방법에 있어서,In the chemical supply method using the chemical supply device of the wet etching device for manufacturing a semiconductor device of claim 1, 상기 케미컬공급관을 통해 상기 버퍼탱크로 케미컬을 공급하는 단계;Supplying chemicals to the buffer tank through the chemical supply pipe; 상기 에어밸브를 열어 상기 버퍼탱크에 담긴 케미컬을 상기 케미컬방출관을 통해 상기 희석탱크로 공급하는 단계; 및Opening the air valve and supplying the chemical contained in the buffer tank to the dilution tank through the chemical discharge tube; And 상기 버퍼탱크에 담긴 케미컬을 상기 희석탱크로 모두 공급한 경우 상기 에어밸브를 닫고 상기 케미컬을 상기 케미컬공급관을 통해 상기 버퍼탱크로 다시 공급하는 단계;Closing all the air valves and supplying the chemicals back to the buffer tank through the chemical supply pipe when all of the chemicals contained in the buffer tank are supplied to the dilution tank; 를 포함하는 것을 특징으로 하는 케미컬 공급방법.Chemical supply method comprising a.
KR1019970046807A 1997-09-11 1997-09-11 Chemical supply device for wet etching device for semiconductor device manufacturing and chemical supply method using same KR100521312B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264247A (en) * 1988-04-15 1989-10-20 Hitachi Ltd Semiconductor cooling apparatus
JPH07153733A (en) * 1993-11-30 1995-06-16 Sony Corp Bubble removing device and its using method
JPH07247963A (en) * 1994-03-07 1995-09-26 Pilot Corp:The Relay pipe and liquid discharge device provided therewith
KR970052736A (en) * 1995-12-20 1997-07-29 김광호 DIW additional supply method of semiconductor etching process and its device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264247A (en) * 1988-04-15 1989-10-20 Hitachi Ltd Semiconductor cooling apparatus
JPH07153733A (en) * 1993-11-30 1995-06-16 Sony Corp Bubble removing device and its using method
JPH07247963A (en) * 1994-03-07 1995-09-26 Pilot Corp:The Relay pipe and liquid discharge device provided therewith
KR970052736A (en) * 1995-12-20 1997-07-29 김광호 DIW additional supply method of semiconductor etching process and its device

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