CN117293064A - Metal stripping method - Google Patents

Metal stripping method Download PDF

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Publication number
CN117293064A
CN117293064A CN202311575289.5A CN202311575289A CN117293064A CN 117293064 A CN117293064 A CN 117293064A CN 202311575289 A CN202311575289 A CN 202311575289A CN 117293064 A CN117293064 A CN 117293064A
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wafer
time
real
spraying
metal
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CN117293064B (en
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任潮群
陈泳
周军奎
吴荣崇
杨冬野
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Suzhou Xinhuilian Semiconductor Technology Co ltd
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Suzhou Xinhuilian Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30136—Metal

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention provides a metal stripping method, and relates to the technical field of semiconductors. Comprising the following steps: sending the wafer to be processed into a high-pressure process cavity, and spraying high-pressure liquid to the surface of the wafer rotating at a high speed through a spraying arm in the high-pressure process cavity; the spraying arm carries out linear reciprocating motion by taking the radius of the wafer as a spraying path according to the set initial speed, and the metal stripping process of the wafer is completed; the method comprises the steps of defining the distance between the projection of a nozzle on a spray arm on the surface of a wafer and the center of the wafer as a real-time radius, establishing a functional relation between the real-time radius and the speed through calculus calculation, obtaining the real-time speed of the spray arm at the current position through the functional relation, controlling the spray arm to move at different positions according to different speeds through the real-time speed, and enabling the spray time of the spray arm at each position of the wafer to be consistent. The invention can improve the uniformity of spraying on each position of the wafer, thereby improving the product quality.

Description

Metal stripping method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a metal stripping method.
Background
The metal stripping process is a fine photoetching process, which means that after a substrate is coated with photoresist, exposed and developed, a photoresist film with a certain pattern is used as a mask, metal is deposited on the photoresist pattern by using evaporation or other methods, then the photoresist is removed, and simultaneously the metal on the photoresist film is stripped completely, and only the metal with the original pattern is left on the substrate. The metal stripping process has the advantages of submicron patterns, steep edges and precise pattern size. The process is generally applicable to the fabrication of semiconductor devices requiring fine lithographic patterns.
In GaAs MESFET (gallium arsenide metal semiconductor field effect transistor) processes, there are several special process methods, among which the most important are metal lift-off technology, self-aligned gate technology and gate notch technology. Since the gate length is on the order of submicron and sub-half micron and the gate width is on the order of hundreds of microns and even millimeters in a microwave GaAs MESFET, it is difficult to qualify for this by conventional silicon transistor metal lithography, which first developed metal lift-off process techniques.
In the traditional metal stripping process, the wafer rotates at a high speed in the high-pressure metal stripping process, and the speed of a spraying arm is uniform. Because the whole wafer is smaller from the outer circumference to the inner circumference, the spraying range cannot cover the radius of the wafer once, so that the spraying time per unit area on the outer side of the wafer is shorter than that on the inner side of the wafer, and the metal on the outer side of the wafer or in a small area of a fixed design line is difficult to strip in the same process time due to inconsistent design of the metal width of the same wafer or uneven photoresist coating on the bottom, so that yield loss is caused.
Disclosure of Invention
In view of this, the embodiment of the application provides a metal stripping method to achieve the purpose of improving the uniformity of spraying on each position of the wafer, thereby improving the product quality.
The embodiment of the application provides the following technical scheme: a metal stripping method comprising:
sending the wafer to be processed into a high-pressure process cavity, and spraying high-pressure liquid to the surface of the wafer rotating at a high speed through a spraying arm in the high-pressure process cavity; the spraying arm carries out linear reciprocating motion by taking the radius of the wafer as a spraying path according to the set initial speed, and the metal stripping process of the wafer is completed;
the method comprises the steps of defining the distance between the projection of a nozzle on a spray arm on the surface of a wafer and the center of the wafer as a real-time radius, establishing a functional relation between the real-time radius and the real-time speed of the spray arm through calculus calculation, obtaining the real-time speed of the spray arm at the current position through the functional relation, and controlling the spray arm to move at different positions according to different speeds through the real-time speed so that the spray time of the spray arm at each position of the wafer is consistent.
According to one embodiment of the present application, the functional relation between the real-time radius and the real-time speed of the spray arm is:
V=1/(2πR）*C
wherein V is real-time speed, R is real-time radius, and C is constant.
According to an embodiment of the present application, the method further includes collecting the real-time radii of the plurality of points in a set area around the center of the wafer, a set area around the radius 1/2 of the wafer, and a set area around the edge of the wafer, and performing multi-segment straight line fitting on the functional relation.
According to one embodiment of the present application, the method further includes modifying the functional relation, where the step of modifying includes:
s1, respectively acquiring first images of a plurality of wafers to be processed before a metal stripping process, and determining the diameter and the circle center position of the wafers through the first images;
s2, sequentially feeding a plurality of wafers to be processed into a high-pressure process cavity, and sequentially completing a metal stripping process on the plurality of wafers through the spraying arms in the high-pressure process cavity;
s3, respectively collecting second images of a plurality of wafers subjected to metal stripping, respectively comparing the second images with a predetermined metal stripping abnormal-free standard sheet, if the second images are abnormal in metal stripping at the same position, determining the real-time radius corresponding to the same position, adjusting the speed of the position according to the corresponding real-time radius, prolonging the spraying time of the position, and finishing the correction of the functional relation.
According to one embodiment of the present application, in S1, determining, by using the first image, a diameter and a center position of a wafer includes:
the method comprises the steps of collecting an image of a wafer through an image collecting device, obtaining the edge position of the wafer through edge extraction of the image, taking the maximum edge position as the diameter of the wafer, and taking the diameter crossing position as the circle center of the wafer.
According to one embodiment of the present application, in S3, comparing the plurality of second images with predetermined metal stripping non-abnormal standard pieces, respectively, includes:
and determining whether the plurality of second images have abnormal metal peeling at the same position according to RBG values of the plurality of second images.
According to an embodiment of the present application, if the metal peeling abnormality occurs in the plurality of second images at the plurality of same positions, the speed of the area between the plurality of same positions is adjusted, so that the spraying time of the area is prolonged.
According to one embodiment of the present application, further comprising: before the metal stripping process, the wafer to be processed is soaked in the soaking solution for a set time, so that the photoresist on the surface of the wafer is softened.
Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least: according to the embodiment of the invention, the functional relation between the position and the speed of the horizontal projection of the nozzle on the spray arm on the wafer radius is established through calculus calculation, and the real-time speed of the spray arm at the current position is obtained through the functional relation, so that the spray arm is controlled to move at different positions according to different speeds through the real-time speed, the spray time of the spray arm at each position of the wafer is consistent, the spray uniformity of each position of the wafer is ensured, and the product quality is improved.
The invention overcomes the defect of uneven metal stripping on the surface of the wafer caused by uniform speed of the spraying arm in the high-pressure metal stripping process in the traditional metal stripping process, and can automatically correct parameters of products with uneven glue coating or products with design defects so as to achieve the effect of complete metal stripping.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a spray path in an embodiment of the invention;
FIG. 2 is a schematic view of wafer diameter and wafer center determination in an embodiment of the present invention;
FIG. 3 is a graph of real-time velocity versus real-time radius in an embodiment of the present invention;
FIG. 4 is a schematic diagram of a fitted straight line relationship of real-time velocity and real-time radius in an embodiment of the present invention;
FIG. 5 is a schematic view of a metal peeling abnormality in an embodiment of the present invention;
FIG. 6 is a graph showing the relationship between real-time velocity and real-time radius after correction in an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating the contrast of the wafer image levels before and after correction in accordance with an embodiment of the present invention.
Detailed Description
Embodiments of the present application are described in detail below with reference to the accompanying drawings.
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is taken in conjunction with the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. The present application may be embodied or carried out in other specific embodiments, and the details of the present application may be modified or changed from various points of view and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The embodiment of the invention provides a metal stripping method, which comprises the following steps:
sending the wafer to be processed into a high-pressure process cavity, and spraying high-pressure liquid to the surface of the wafer rotating at a high speed through a spraying arm in the high-pressure process cavity; the spraying arm carries out linear reciprocating motion by taking the radius of the wafer as a spraying path according to the set initial speed (the spraying path is shown in figure 1) to finish the metal stripping process of the wafer; the method comprises the steps of defining the distance between the projection of a nozzle on a spray arm on the surface of a wafer and the center of the wafer as a real-time radius, establishing a functional relation between the real-time radius and the real-time speed of the spray arm through calculus calculation, obtaining the real-time speed of the spray arm at the current position through the functional relation, and controlling the spray arm to move at different positions according to different speeds through the real-time speed so that the spray time of the spray arm at each position of the wafer is consistent.
In this embodiment, as shown in fig. 3, the functional relation between the real-time radius and the real-time speed of the spray arm is:
V=1/(2πR）*C
wherein V is the real-time velocity, R is the real-time radius, and C is a constant, which can be obtained by setting the initial velocity of the initial position.
The embodiment further comprises the steps of respectively collecting the real-time radiuses of a plurality of points in a set area around the wafer center, a set area around the radius 1/2 of the wafer and a set area around the wafer edge, and realizing multistage straight line fitting on the functional relation according to the motor controller capacity to control uniformity.
To further ensure spray uniformity, in one embodiment, the method further comprises modifying the functional relationship, the step of modifying comprising:
s1, respectively acquiring first images of a plurality of wafers to be processed before a metal stripping process, and determining the diameter and the circle center position of the wafers through the first images;
s2, sequentially feeding a plurality of wafers to be processed into a high-pressure process cavity, and sequentially completing a metal stripping process on the plurality of wafers through the spraying arms in the high-pressure process cavity;
s3, respectively collecting second images of a plurality of wafers subjected to metal stripping, respectively comparing the second images with a predetermined metal stripping abnormal-free standard sheet, if the second images are abnormal in metal stripping at the same position, determining the real-time radius corresponding to the same position, adjusting the speed of the position according to the corresponding real-time radius, prolonging the spraying time of the position, and finishing the correction of the functional relation.
According to the metal stripping method, a functional relation between the position (real-time radius) of the horizontal projection of the nozzle on the spray arm on the wafer radius and the speed is established through calculus calculation, the real-time speed of the spray arm at the current position is obtained through the functional relation, and therefore the spray arm is controlled to move at different positions according to different speeds through the real-time speed, namely, the speed of the spray arm is slow at the edge of the wafer and fast in the middle, so that the spraying time of the spray arm at each position of the wafer is consistent, the spraying uniformity of each position of the wafer is guaranteed, and the product quality is improved.
In addition, after a functional relation between the real-time radius and the speed of the spray arm is obtained, the functional relation is further modified. Before the metal stripping process is carried out, the radius and the circle center of the wafer are grabbed through an imaging lens, and the spraying time of each position on the wafer is kept consistent by controlling the movement speed of a spraying arm during metal stripping; and comparing the appearance of the wafer image after metal stripping through the tone scale, confirming the radius of the non-metal stripping position, and improving the quality of the metal stripping process by automatically modifying the speed of a spraying arm. According to the invention, the spraying time of each position of the wafer is uniform by controlling the spraying arm, the non-metal stripping position is automatically grasped, the parameters are corrected, the spraying uniformity is improved, the quality problem of products caused by uneven gluing or design defects can be improved, and the effect of complete metal stripping is achieved.
In specific implementation, the metal stripping device used in the method comprises an imaging lens, a manipulator, a soaking cavity, a high-pressure process cavity formed by a wafer rotating chuck, a spraying arm moving at a specific speed and the like, and a high-pressure pump. The metal stripping process flow is that firstly, a wafer to be processed is soaked in a soaking cavity to soften photoresist, high pressure is output in a high-pressure process cavity through a high-pressure pump, a spraying arm swings, and high-pressure liquid is used for spraying the photoresist and metal on the wafer rotating at a high speed to strip the photoresist.
In the parameter correction, S1, determining the diameter and the center position of the wafer according to the first image, as shown in fig. 2, includes: the method comprises the steps of collecting an image of a wafer through an image collecting device, obtaining the edge position of the wafer through edge extraction of the image, taking the maximum edge position as the diameter of the wafer, and taking the diameter crossing position as the circle center of the wafer. Edge extraction refers to one of the digital image processing for the picture outline. For the boundary, where the gray value changes more drastically, it is defined as an edge. In addition, in actual operation, tolerances may be set for the wafer diameter and center of the circle.
S3, comparing the plurality of second images with a predetermined metal stripping abnormal-free standard sheet respectively, wherein the method comprises the following steps of: and determining whether the plurality of second images have abnormal metal peeling at the same position, namely whether the metal fragments are peeled off or not, or the like, according to RBG values of the plurality of second images.
In other embodiments, if the metal peeling abnormality occurs in the plurality of second images at the plurality of same positions, the speed of the region between the plurality of same positions is adjusted so that the spraying time of the region is prolonged. For example, if the distances between the two positions with abnormal metal peeling and the center of the wafer are R1 and R2, respectively, the spraying time is increased at the corresponding interval position according to the interval of R1 and R2, that is, the speed of the spraying arm is reduced.
In one embodiment, the wafer size in the metal lift-off process of this embodiment is an 8 inch wafer, diameter 200 mm, metal thickness 0.2 μm, photoresist thickness 1 μm. In a specific operation process, the wafer is firstly grabbed by the imaging lens before metal stripping, a wafer image is obtained, and the wafer diameter 200 mm and the circle center position are confirmed by carrying out edge value on the wafer image. The next process flow is that firstly, the wafer is soaked in N-methyl pyrrolidone at 65 ℃ for 5 min to soften the photoresist, the wafer is transferred to a high-pressure process chamber through a manipulator after being taken out, the high pressure is output by a high-pressure pump to about 12 Mpa, and meanwhile, the photoresist and the metal above the photoresist are stripped through the high-pressure liquid by swinging a spraying arm.
In this example, the initial speed was set to 2mm/s, and the speed was set according to the multi-segment fitting curve of FIG. 4. The spraying path is from the edge of the wafer to the circle center and circularly reciprocates.
After the metal stripping process is finished, the wafer is grabbed again through the imaging lens, and then the obtained wafer image is compared with the same type of product to determine the difference of the red, green and blue color steps (namely RBG value). And comparing the wafer after metal stripping with the standard chip color level, if the wafer has a common abnormal metal stripping position, as shown in fig. 5, capturing the position which is not stripped by metal through an imaging lens, confirming that the position is at a position which is 10-18 mm away from the center of the wafer, correspondingly reducing the moving speed of a spray arm for the position, repeating the steps according to new parameters by a subsequent wafer, wherein the relation between the corrected spray speed and the real-time radius is shown in fig. 6, and the image color level pairs of the wafer before and after correction are shown in fig. 7.
According to the embodiment of the invention, the spraying time of each position of the wafer is uniform by controlling the spraying arm, the position which is not stripped by metal is automatically grabbed, the parameters are corrected, the spraying uniformity is improved, and the quality problem of products caused by uneven gluing or design defects can be improved.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present application should be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (8)

1. A metal peeling method, comprising:
sending the wafer to be processed into a high-pressure process cavity, and spraying high-pressure liquid to the surface of the wafer rotating at a high speed through a spraying arm in the high-pressure process cavity; the spraying arm carries out linear reciprocating motion by taking the radius of the wafer as a spraying path according to the set initial speed, and the metal stripping process of the wafer is completed;
the method comprises the steps of defining the distance between the projection of a nozzle on a spray arm on the surface of a wafer and the center of the wafer as a real-time radius, establishing a functional relation between the real-time radius and the real-time speed of the spray arm through calculus calculation, obtaining the real-time speed of the spray arm at the current position through the functional relation, and controlling the spray arm to move at different positions according to different speeds through the real-time speed so that the spray time of the spray arm at each position of the wafer is consistent.
2. The metal stripping method according to claim 1, wherein the functional relationship between the real-time radius and the real-time speed of the spray arm is:
V=1/(2πR）*C
wherein V is real-time speed, R is real-time radius, and C is constant.
3. The metal peeling method according to claim 2, further comprising acquiring the real-time radii of a plurality of points in a set region around a center of the wafer, a set region around a 1/2 position of a radius of the wafer, and a set region around an edge position of the wafer, respectively, and performing multi-stage straight line fitting on the functional relation.
4. The metal stripping method as claimed in claim 2, further comprising the step of correcting the functional relation, the step of correcting comprising:
s1, respectively acquiring first images of a plurality of wafers to be processed before a metal stripping process, and determining the diameter and the circle center position of the wafers through the first images;
s2, sequentially feeding a plurality of wafers to be processed into a high-pressure process cavity, and sequentially completing a metal stripping process on the plurality of wafers through the spraying arms in the high-pressure process cavity;
s3, respectively collecting second images of a plurality of wafers subjected to metal stripping, respectively comparing the second images with a predetermined metal stripping abnormal-free standard sheet, if the second images are abnormal in metal stripping at the same position, determining the real-time radius corresponding to the same position, adjusting the speed of the position according to the corresponding real-time radius, prolonging the spraying time of the position, and finishing the correction of the functional relation.
5. The metal peeling method according to claim 4, wherein in S1, determining the diameter and the center position of the wafer from the first image comprises:
the method comprises the steps of collecting an image of a wafer through an image collecting device, obtaining the edge position of the wafer through edge extraction of the image, taking the maximum edge position as the diameter of the wafer, and taking the diameter crossing position as the circle center of the wafer.
6. The metal peeling method according to claim 4, wherein in S3, the comparing the plurality of second images with the predetermined metal peeling non-abnormal standard sheet, respectively, comprises:
and determining whether the plurality of second images have abnormal metal peeling at the same position according to RBG values of the plurality of second images.
7. The metal peeling method according to claim 4, wherein if a metal peeling abnormality occurs in each of the plurality of the second images at a plurality of the same positions, the speed of the region between the plurality of the same positions is adjusted so that the spraying time of the region is prolonged.
8. The metal peeling method according to claim 4, characterized by further comprising: before the metal stripping process, the wafer to be processed is soaked in the soaking solution for a set time, so that the photoresist on the surface of the wafer is softened.
CN202311575289.5A 2023-11-24 2023-11-24 Metal stripping method Active CN117293064B (en)

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US20140377951A1 (en) * 2013-06-20 2014-12-25 Solid State Equipment Llc Apparatus and Method for Removing Challenging Polymer Films and Structures from Semiconductor Wafers
CN114334608A (en) * 2021-12-08 2022-04-12 江苏晋誉达半导体股份有限公司 Automatic photoresist stripping process

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008130763A (en) * 2006-11-20 2008-06-05 Dainippon Screen Mfg Co Ltd Two-fluid nozzle, and substrate treating device using the same
US20080305634A1 (en) * 2007-05-23 2008-12-11 Texas Instruments Incorporated Metal Film Separation Prevention Structure in Metal Film Forming Device, and Semiconductor Device Manufacturing Method Using Said Structure
US20140377951A1 (en) * 2013-06-20 2014-12-25 Solid State Equipment Llc Apparatus and Method for Removing Challenging Polymer Films and Structures from Semiconductor Wafers
CN114334608A (en) * 2021-12-08 2022-04-12 江苏晋誉达半导体股份有限公司 Automatic photoresist stripping process

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