CN117289544B - PSM mask blank defect repairing method, equipment and storage medium - Google Patents
PSM mask blank defect repairing method, equipment and storage medium Download PDFInfo
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- 230000008439 repair process Effects 0.000 claims abstract description 108
- 238000007689 inspection Methods 0.000 claims abstract description 45
- 238000012545 processing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 53
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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Abstract
The invention discloses a method, equipment and a storage medium for repairing white defects of a PSM mask plate, wherein the method comprises the following steps: sequentially processing and forming a shading layer and a phase shift layer which are stacked on a transparent substrate; after the light shielding layer and/or the phase shift layer are formed, performing defect inspection on the light shielding layer and/or the phase shift layer to obtain the position of a white defect; and repairing the white defects of the light shielding layer and/or the phase shifting layer according to the positions of the white defects. According to the invention, the defect inspection is selectively carried out on the light shielding layer and/or the phase shift layer, and the white defect of the light shielding layer and/or the phase shift layer is selectively repaired according to the position of the white defect, so that the method is suitable for repairing a high-precision mask, and the white defect can be repaired by using a surface repair or local repair mode according to the type of the white defect, thereby improving the repair capability of the white defect, and compared with the traditional repair mode, the repair cost is lower.
Description
Technical Field
The invention relates to the technical field of masks, in particular to a method, equipment and a storage medium for repairing white defects of a PSM mask.
Background
With the rapid development of integrated circuit designs, mask pattern designs are increasingly scaled down in size and have increasingly apparent optical proximity effects. More and more optical techniques and optical proximity correction techniques are applied to photolithography processes. The shorter wavelength of the exposure wavelength reduces the depth of focus while improving sharpness, thereby reducing process stability. In order to ensure accuracy of photolithography patterns, phase Shift Mask (PSM) technology is increasingly used.
In the related art, the production process of the PSM mask plate is that after exposure, development and etching are carried out on the photoresist of the raw material, a pattern area is formed on the surfaces of a Cr layer, namely a shading layer and a phase shift layer, after demoulding and cleaning, the photoresist is coated on the surfaces of the pattern area and the Cr layer, after secondary exposure, development and etching, a pattern area is formed on the surfaces of the phase shift layer, and then after the steps of demoulding, cleaning, inspection and the like, if the product is defect-free, finished product packaging and shipment can be carried out; if the product generates defects in any link in the link process, after the product is checked by the checking equipment, the type and the size of the generated defects need to be primarily judged, and whether the product can be repaired or not is determined. The defects generated in the process can be defects of raw materials or defects formed in a subsequent process flow after non-graphic areas are subjected to false exposure, the defects are mostly repaired by adopting a repairing method of ink repairing pinholes, namely after a mask plate detects white defects on inspection equipment, whether an upstream fab is repaired or not is determined, if the defects are not repaired, products are scrapped directly, whether the sizes of the white defects can be repaired or not is determined, the white defects are too large or too small and cannot be repaired, and finally, if the sizes of the defects are in proper sizes, a certain amount of ink is manually dipped in the white defect areas by locating the coordinate positions of the defects, and then heating and curing are carried out, so that the purpose of repairing is achieved.
However, with the continuous improvement of the wafer process node, the defect requirement of the mask is more and more strict, the traditional method for repairing the ink repairing pinholes is not suitable for repairing the high-precision mask, and the repairing capability of the repairing equipment on the white defect type is low, and the equipment cost is extremely high.
Disclosure of Invention
The main purpose of the invention is that: the utility model provides a PSM mask blank defect repairing method, equipment and a storage medium, which aims to solve the technical problem that the repairing method in the prior art is not suitable for repairing a high-precision mask.
In order to achieve the above purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for repairing a white defect of a PSM mask, where the method includes:
sequentially processing and forming a shading layer and a phase shift layer which are stacked on a transparent substrate;
after the light shielding layer and/or the phase shift layer are formed, performing defect inspection on the light shielding layer and/or the phase shift layer to obtain the position of a white defect;
and repairing the white defects of the light shielding layer and/or the phase shifting layer according to the positions of the white defects.
Optionally, in the method for repairing a white defect of a PSM mask, after the light shielding layer and/or the phase shift layer are formed, performing defect inspection on the light shielding layer and/or the phase shift layer, and obtaining a position of the white defect includes:
after the light shielding layer and the phase shifting layer are formed, performing defect inspection on the light shielding layer and the phase shifting layer;
and marking the position with the white defect on the light shielding layer and/or the phase shifting layer to obtain the position of the white defect.
Optionally, in the method for repairing a white defect of a PSM mask, the step of repairing the white defect of the light shielding layer and/or the phase shift layer according to the position of the white defect includes:
when the light shielding layer and the phase shifting layer both have the white defects, selecting a local repair mode to repair the white defects of the light shielding layer and the phase shifting layer corresponding to the positions of the white defects respectively;
when the light shielding layer or the phase shift layer has the white defect, a surface repair mode is selected to repair the white defect of the light shielding layer or the phase shift layer corresponding to the position of the white defect.
Optionally, in the method for repairing a white defect of a PSM mask, when the light shielding layer and the phase shift layer both have the white defect, the step of selecting a local repair mode to repair the white defect of the light shielding layer and the phase shift layer corresponding to the position of the white defect respectively includes:
coating photoresist at the positions of the light shielding layer and the phase shifting layer with the white defects respectively, and correspondingly forming a first area to be exposed and a second area to be exposed; a first photoresist is arranged at the position of the shading layer corresponding to the first region to be exposed, and a second photoresist is arranged at the position of the phase shifting layer corresponding to the second region to be exposed;
exposing the first region to be exposed and the second region to be exposed respectively, and stripping the first photoresist and the second photoresist respectively to form a first region to be repaired and a second region to be repaired;
judging whether the first area to be repaired and the second area to be repaired are overlapped or not;
if yes, the first repair material is used for repairing the first area to be repaired and the second area to be repaired respectively;
if not, providing a second repair material and repairing the first to-be-repaired area and the second to-be-repaired area respectively by utilizing a local deposition mode; the second repair material is different from the first repair material.
Optionally, in the method for repairing a white defect of a PSM mask, when the light shielding layer or the phase shift layer has the white defect, the step of repairing the white defect of the light shielding layer or the phase shift layer corresponding to the position of the white defect by selecting a surface repairing method includes:
coating photoresist at the position where any one of the light shielding layer and the phase shift layer has the white defect, and correspondingly forming a third area to be exposed; a third photoresist is arranged at the position of the shading layer or the phase shift layer corresponding to the third area to be exposed;
exposing the third area to be exposed, and stripping the third photoresist to form a third area to be repaired;
and repairing the third area to be repaired by using a surface deposition mode.
Optionally, in the method for repairing a white defect of a PSM mask, after the step of repairing the third area to be exposed by using a surface deposition method, the method further includes:
coating photoresist at the position where the other one of the light shielding layer and the phase shift layer has the white defect, and correspondingly forming a fourth area to be exposed; a fourth photoresist is formed at a position of the other one of the light shielding layer and the phase shift layer corresponding to the fourth area to be exposed;
exposing the fourth area to be exposed, and stripping the fourth photoresist to form a fourth area to be repaired;
and repairing the fourth area to be repaired by using a surface deposition mode.
Optionally, in the method for repairing a white defect of a PSM mask, after the light shielding layer and/or the phase shift layer are formed, performing defect inspection on the light shielding layer and/or the phase shift layer, and obtaining a position of the white defect includes:
after the light shielding layer is formed, performing defect inspection on the light shielding layer to obtain a first inspection result;
judging whether the light shielding layer has white defects or not according to the first checking result;
if yes, marking the position with the white defect on the shading layer to obtain the position of the first white defect;
if not, after forming the phase shift layer, performing defect inspection on the phase shift layer to obtain a second inspection result, and judging whether the phase shift layer has white defects according to the second inspection result; if yes, marking the position with the white defect on the phase shift layer to obtain a second white defect position; if not, the position of the white defect is none.
Optionally, in the method for repairing a white defect of a PSM mask, the step of repairing the white defect of the light shielding layer and/or the phase shift layer according to the position of the white defect includes:
repairing the white defect of the shading layer by utilizing a local deposition or surface deposition mode according to the position of the second white defect;
and repairing the white defect of the phase shift layer by utilizing the local deposition or the surface deposition according to the position of the first white defect.
In a second aspect, the present invention provides a PSM reticle white defect repair apparatus, the apparatus comprising: the PSM reticle white defect repair program comprises a memory, a processor and a PSM reticle white defect repair program stored on the memory and capable of running on the processor, wherein the PSM reticle white defect repair program is configured to implement the steps of the PSM reticle white defect repair method.
In a third aspect, the present invention provides a computer readable storage medium having stored thereon a computer program which, when executed by one or more processors, implements the steps of a PSM reticle white defect repair method as described above.
The one or more technical schemes provided by the invention can have the following advantages or at least realize the following technical effects:
according to the PSM mask blank white defect repairing method, equipment and storage medium, after the shading layer and/or the phase shift layer are formed, defect inspection is selectively carried out on the shading layer and/or the phase shift layer to obtain the position of the white defect, the shading layer and/or the phase shift layer is selectively repaired according to the position of the white defect, various optional operation sequences are provided for repairing the PSM mask blank white defect subsequently, various optional operation bases are provided for a repairing process, the PSM mask blank white defect repairing method is suitable for repairing a high-precision mask blank, the surface repairing or local repairing type is used for repairing the white defect according to the type of the white defect, the repairing capability of the white defect is improved, compared with the traditional repairing type, the repairing cost is lower, in addition, when the PSM mask blank white defect repairing method is used for repairing the white defect, the size of the white defect is not limited, the scrapping probability caused by repairing is reduced, and the problem of special white defect such as sinking is solved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained from the drawings provided without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for repairing a white defect of a PSM mask;
FIG. 2 is a flow chart illustrating a method for repairing white defects of a light shielding layer and a phase shift layer according to an embodiment of the invention;
FIG. 3 is a schematic flow chart of performing surface repair on white defects of a light shielding layer and a phase shift layer according to an embodiment of the invention;
FIG. 4 is a flow chart illustrating a process of repairing white defects of a light shielding layer according to an embodiment of the invention;
FIG. 5 is a flow chart illustrating a process of repairing white defects of a phase shift layer according to an embodiment of the invention;
fig. 6 is a schematic structural diagram of a PSM mask blank defect repair apparatus according to the present invention.
Reference numerals illustrate:
the achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in the embodiment of the present invention, all directional indications (such as up, down, left, right, front, and rear … …) are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a certain specific posture (as shown in the drawings), and if the specific posture is changed, the directional indication is changed accordingly.
In the present disclosure, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element. In addition, the meaning of "and/or" as it appears throughout includes three parallel schemes, for example "A and/or B", including the A scheme, or the B scheme, or the scheme where A and B are satisfied simultaneously.
In the present invention, unless explicitly specified and limited otherwise, the terms "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be either a fixed connection or a removable connection or integrated; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; the communication between the two elements can be realized, or the interaction relationship between the two elements can be realized.
In the present invention, if there is a description referring to "first", "second", etc., the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature.
In the present invention, suffixes such as "module", "assembly", "piece", "part" or "unit" used for representing elements are used only for facilitating the description of the present invention, and have no specific meaning per se. Thus, "module," "component," or "unit" may be used in combination.
The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. In addition, the technical solutions of the embodiments may be combined with each other, but it is based on the fact that those skilled in the art can implement the combination of the technical solutions, when the technical solutions contradict each other or cannot be implemented, the combination of the technical solutions should be considered as not existing and not falling within the protection scope of the present invention.
The inventive concept of the present invention is further elucidated below in connection with some embodiments.
The invention provides a method, equipment and storage medium for repairing white defects of a PSM mask plate.
Referring to fig. 1, fig. 1 is a flow chart of a PSM mask blank defect repair method according to the present invention.
In an embodiment of the present invention, as shown in fig. 1, a method for repairing a white defect of a PSM reticle, the method includes the following steps:
step S10: sequentially processing and forming a light shielding layer 300 and a phase shift layer 200 which are stacked on a transparent substrate 100;
step S20: after the light shielding layer 300 and/or the phase shift layer 200 are formed, performing defect inspection on the light shielding layer 300 and/or the phase shift layer 200 to obtain white defect positions;
step S30: the white defects of the light shielding layer 300 and/or the phase shift layer 200 are repaired according to the positions of the white defects.
It should be noted that, the transparent substrate 100 may be a glass substrate in the prior art, and the light shielding layer 300 may be a Cr layer in the prior art; the PSM mask is different from a binary mask, the PSM mask is imaged by utilizing a phase interference principle, a film with certain light transmittance is adopted as a phase shift layer 200, the film is covered on adjacent gaps for forming patterns to form a mask layout, and transmitted light passing through the phase shift layer 200 is inverted to increase the resolution of the patterns; the white defect is a product defect generated on a mask plate in the production and manufacturing process, and is called a white defect because the structural material of the white defect is different from a metal film for recording information, so that the metal film which originally records pattern information and has complete light blocking or partial enough light is lost, and the light transmittance of the white defect is changed.
As an alternative implementation of this embodiment: after the light shielding layer 300 and the phase shift layer 200 are formed, performing defect inspection on the light shielding layer 300 and the phase shift layer 200 to obtain white defect positions; by performing defect inspection on the light shielding layer 300 and the phase shift layer 200 at the same time, the inspection efficiency of the white defect of the PSM mask can be improved, and an operation sequence is provided for repairing the white defect of the PSM mask by selecting a proper method later, namely, after defect inspection is performed on both the light shielding layer 300 and the phase shift layer 200, the white defect is repaired on both the light shielding layer 300 and the phase shift layer 200, and an operation basis is provided for repairing defects of the Cr layer and the phase shift layer 200 after etching is performed on both the Cr layer, i.e., the light shielding layer 300 and the phase shift layer 200.
As another alternative implementation of this embodiment: after the light shielding layer 300 and the phase shift layer 200 are formed, performing defect inspection on the light shielding layer 300 or the phase shift layer 200 to obtain a white defect position; by performing defect inspection on the light shielding layer 300 and the phase shift layer 200, inspection accuracy of white defects of the PSM mask can be improved, positions of the white defects can be more accurately confirmed, another operation sequence is provided for repairing the white defects of the PSM mask by selecting a proper method later, and an operation basis for repairing defects of the Cr layer first and then repairing the defects of the phase shift layer 200 is provided for a repairing process.
It should be understood that after etching both the light shielding layer 300 and the phase shift layer 200, defects of the light shielding layer 300 and the phase shift layer 200 may be repaired by local repair or surface repair.
Specifically, when the light shielding layer 300 and the phase shift layer 200 have white defects at the same time, the white defects of the light shielding layer 300 and the phase shift layer 200 can be repaired by directly using the Cr layer, i.e. the material of the light shielding layer 300, respectively, so that the repairing process of the white defects of the PSM mask is reduced, and the repairing difficulty of the white defects of the PSM mask is reduced by using a repairing material which is easier to obtain.
According to the technical scheme, after the light shielding layer 300 and/or the phase shift layer 200 are formed, defect inspection is selectively performed on the light shielding layer 300 and/or the phase shift layer 200 to obtain the position of the white defect, and the white defect of the light shielding layer 300 and/or the phase shift layer 200 is selectively repaired according to the position of the white defect, so that various optional operation sequences are provided for repairing the white defect of the PSM mask plate in the follow-up process, various optional operation bases are provided for the repairing process, the repairing process is suitable for repairing a high-precision mask plate, and the repairing capability of the white defect is improved by using a surface repairing or local repairing mode according to the type of the white defect.
In one embodiment, after the light shielding layer 300 and/or the phase shift layer 200 are formed, performing defect inspection on the light shielding layer 300 and/or the phase shift layer 200 to obtain a white defect position includes:
step S21: after forming the light shielding layer 300 and the phase shift layer 200, performing defect inspection on the light shielding layer 300 and the phase shift layer 200;
step S22: and marking the position with the white defect on the light shielding layer 300 and/or the phase shifting layer 200 to obtain the position of the white defect.
It should be noted that, because of the great difference between the repair efficiency and repair cost of the different repair methods, the production of the PSM mask is completed according to the process in the prior art, and the white defect generated in the Cr layer, i.e. the light shielding layer 300, is not etched in the etching process due to the photoresist being coated before the second exposure in the process of repairing the white defect of the phase shift layer 200; the white defect of the phase shift layer 200 is accurately repaired by selecting a local repair or surface repair mode, so that the repair precision of the white defect is ensured while the repair cost of the white defect is reduced, and the phase shift layer is more suitable for repairing a high-precision mask.
Referring to fig. 2 and 3, fig. 2 is a schematic flow chart illustrating a process of repairing white defects of a light shielding layer and a phase shift layer according to an embodiment of the invention; FIG. 3 is a flow chart illustrating a process of repairing white defects of a light shielding layer and a phase shift layer according to an embodiment of the invention.
In an embodiment, as shown in fig. 2 and 3, the steps for implementing how to select the local repair or the surface repair to accurately repair the white defect of the phase shift layer 200 are as follows:
the step of repairing the white defect of the light shielding layer 300 and/or the phase shift layer 200 according to the position of the white defect includes:
step S31: when the light shielding layer 300 and the phase shift layer 200 both have the white defect, selecting a local repair mode to repair the white defect of the light shielding layer 300 and the phase shift layer 200 corresponding to the position of the white defect;
step S32: when the light shielding layer 300 or the phase shift layer 200 has the white defect, the white defect of the light shielding layer 300 or the phase shift layer 200 corresponding to the position of the white defect is repaired by selecting a surface repair method.
With respect to the manner of local repair, in particular:
in an embodiment, as shown in fig. 2, when the light shielding layer 300 and the phase shift layer 200 both have the white defect, the step of selecting the local repair to repair the white defect of the light shielding layer 300 and the phase shift layer 200 corresponding to the location of the white defect includes:
step S311: coating photoresist at the positions of the light shielding layer 300 and the phase shift layer 200 with the white defects respectively, and correspondingly forming a first area to be exposed and a second area to be exposed; a first photoresist is disposed at a position of the light shielding layer 300 corresponding to the first region to be exposed, and a second photoresist is disposed at a position of the phase shift layer 200 corresponding to the second region to be exposed;
step S312: exposing the first region to be exposed and the second region to be exposed respectively, and stripping the first photoresist and the second photoresist respectively to form a first region to be repaired and a second region to be repaired;
step S313: judging whether the first area to be repaired and the second area to be repaired are overlapped or not;
step S314: if yes, the first repair material 700 is used for repairing the first area to be repaired and the second area to be repaired respectively;
step S315: if not, providing a second repair material 800 and repairing the first to-be-repaired area and the second to-be-repaired area respectively by utilizing a local deposition mode; the second repair material 800 is different from the first repair material 700.
It should be noted that, the first white defect in the drawing refers to a white defect located in the phase shift layer 200, and the position of the first white defect corresponds to the position of the second region to be exposed, the position of the second photoresist, and the position of the second region to be repaired;
the second white defect is a white defect located in the light shielding layer 300, i.e. the Cr layer, and the position of the second white defect corresponds to the position of the first region to be exposed, the position of the first photoresist and the position of the first region to be repaired;
the first repair material 700 is the same material as the Cr layer in the prior art, and the second repair material 800 is the same material as the phase shift layer 200 in the prior art, and both the first photoresist and the second photoresist are located on the photoresist layer 400.
It should be understood that, as shown in fig. 2, photoresist with a proper thickness is partially coated around the first white defect and the second white defect, positioning exposure is performed on the defects of the Cr layer and the phase shift layer 200, the exposed PSM strips the photoresist of the exposed portion of the photoresist layer 400 through a developing process, then repairing is performed on the defects of the Cr layer and the phase shift layer 200 by using a partial deposition method, since the thickness of the phase shift layer 200 has a great influence on the phase, the size S of the defect can be identified by a detection device, the thickness d of the phase shift layer 200 required for realizing 180 ° phase transition is known, and the density of the repair material of the phase shift layer 200, that is, the second repair material 800 is a known amount ρ, and the precise repair of the thickness of the phase shift layer 200 can be realized by controlling the quality m=s×d×ρ by a repair device. In addition, when the Cr layer and the phase shift layer 200 are defective at the same time, since they are opaque here, the repair can be directly performed with the first repair material 700.
Regarding the manner of surface repair, specifically:
in an embodiment, as shown in fig. 3, when the light shielding layer 300 or the phase shift layer 200 has the white defect, the step of selecting the surface repair to repair the white defect of the light shielding layer 300 or the phase shift layer 200 corresponding to the position of the white defect includes:
step S321: coating photoresist at the position where any one of the light shielding layer 300 and the phase shift layer 200 has the white defect, and correspondingly forming a third area to be exposed; a third photoresist is disposed at a position of the light shielding layer 300 or the phase shift layer 200 corresponding to the third region to be exposed;
step S322: exposing the third area to be exposed, and stripping the third photoresist to form a third area to be repaired;
step S323: and repairing the third area to be repaired by using a surface deposition mode.
It should be noted that, the position of the third area to be exposed may correspond to the position of the first white defect and/or the position of the second white defect.
It should be understood that, as shown in fig. 3, a photoresist with a proper thickness is coated on the surface of the PSM mask, the defects of the Cr layer (or the phase shift layer 200) are first subjected to positioning exposure by detecting the defect coordinates of the equipment, the exposed PSM is stripped of the photoresist of the exposed portion by a developing process, and then the defects of the Cr layer (or the phase shift layer 200) are respectively repaired by using a surface deposition method;
after repairing the Cr layer (or the phase shift layer 200), photoresist with proper thickness is coated on the surface of the PSM mask again after photoresist stripping and cleaning are carried out on the PSM mask, positioning exposure is carried out on the defects of the phase shift layer 200 (or the Cr layer), the exposed PSM strips the photoresist of the exposed part through a developing process, and then the defects of the phase shift layer 200 (or the Cr layer) are respectively repaired by utilizing a surface deposition method; because the thickness of the phase shift layer 200 has a large influence on the phase, the thickness of the phase shift layer 200 can be precisely controlled by the relation between the deposition speed and time of the surface repair, thereby realizing precise repair.
In an embodiment, to continue repairing the white defect, after the step of repairing the third area to be exposed by using the area deposition method, the method further includes:
step S301: coating photoresist at the position where the other one of the light shielding layer 300 and the phase shift layer 200 has the white defect, and correspondingly forming a fourth area to be exposed; a fourth photoresist is formed at a position of the other of the light shielding layer 300 and the phase shift layer 200 corresponding to the fourth region to be exposed;
step S302: exposing the fourth area to be exposed, and stripping the fourth photoresist to form a fourth area to be repaired;
step S303: and repairing the fourth area to be repaired by using a surface deposition mode.
It should be noted that the steps of the repairing method in the present embodiment are the same as those of the repairing method in the previous embodiment, and will not be repeated here.
Referring to fig. 4 and 5, fig. 4 is a flow chart illustrating a process of repairing a white defect of a light shielding layer according to an embodiment of the invention; FIG. 5 is a flow chart illustrating a process of repairing white defects of a phase shift layer according to an embodiment of the invention.
In an embodiment, as shown in fig. 4 and 5, the step of repairing the white defect of the light shielding layer 300, i.e. the Cr layer, and then repairing the white defect of the phase shift layer 200, and after the light shielding layer 300 and/or the phase shift layer 200 are formed, performing defect inspection on the light shielding layer 300 and/or the phase shift layer 200 to obtain the position of the white defect includes:
step F21: after the light shielding layer 300 is formed, performing defect inspection on the light shielding layer 300 to obtain a first inspection result;
step F22: judging whether the light shielding layer 300 has white defects according to the first inspection result;
step F23: if yes, marking the position with the white defect on the light shielding layer 300 to obtain a first white defect position;
step F24: if not, after forming the phase shift layer 200, performing defect inspection on the phase shift layer 200 to obtain a second inspection result, and judging whether the phase shift layer 200 has a white defect according to the second inspection result; if yes, marking the position with the white defect on the phase shift layer 200 to obtain a second white defect position; if not, the position of the white defect is none.
The curved arrow on the left side in fig. 1 to 5 is an advance showing the repair process.
In one embodiment, the step of repairing the white defect of the light shielding layer 300 and/or the phase shift layer 200 according to the position of the white defect includes:
step F31: repairing the white defect of the light shielding layer 300 by utilizing a local deposition or surface deposition mode according to the position of the second white defect;
step F32: and repairing the white defect of the phase shift layer 200 by utilizing the local deposition or the surface deposition according to the position of the first white defect.
Specifically, in step F31, as shown in fig. 4, after the PSM mask is exposed for the first time, developed and etched, if white defects are found to be generated on the Cr surface after inspection by the apparatus, a layer of photoresist with a proper thickness may be coated on the Cr layer surface, positioning exposure is performed on the defect on the lithographic apparatus according to the coordinate position after inspection by the apparatus, after development is completed, the exposed portion is stripped, and then metal deposition is performed, so that nondestructive repair of the Cr layer may be achieved. The manner of using surface deposition may be considered when the number of white defects on the PSM surface is large, and localized deposition may be used when the number of white defects on the PSM surface is small.
In step F32, as shown in fig. 5, after the PSM mask is exposed for the second time, and developed and etched, if white defects are found to be generated on the surface of the phase shift layer 200 after inspection by the device, a photoresist layer with a proper thickness may be coated on the surface of the phase shift layer 200, positioning exposure is performed on the defect position on the lithography machine according to the coordinate position after inspection by the device, after development, the exposed portion is stripped, and then deposition of the phase shift layer 200 is performed to realize nondestructive repair of the phase shift layer 200, where deposition may enable local deposition or surface deposition, and since the unexposed portion has the photoresist barrier, nondestructive repair of the white defect position of the phase shift layer 200 may be realized, and the photoresist is stripped after repair is completed. Since the thickness of the phase shift layer 200 has a large influence on the phase, the phase shift layer 200 can be precisely repaired by the nature of the repair method (local repair or surface repair). If the deposition is locally performed, the size S of the defect can be identified by the detection device, the thickness d of the phase shift layer 200 required for achieving 180 ° phase transition is known, the density of the repair material of the phase shift layer 200 is a known amount ρ, and the quality control m=s×d×ρ of the repair device can be used to achieve accurate repair of the thickness of the phase shift layer 200. In the case of surface repair, the thickness of the phase shift layer 200 can be precisely controlled by the relationship between the deposition speed and time, thereby realizing precise repair. Therefore, according to the method for repairing the white defects of the PSM mask in the above embodiments, the white defects of the light shielding layer 300 and/or the phase shift layer 200 are repaired by using the surface repair or local repair method according to the types of the white defects, such as the size, the protrusion or the depression, in different production cycles of the mask, so that the repairing capability of the white defects is improved, compared with the traditional repair method, the repairing cost is lower, the repairing method is not limited by the types of the white defects, the probability of scrapping due to repair is reduced, meanwhile, the problem that some special white defects, such as the depression, cannot be repaired is solved, and compared with the existing ink repair method, the repairing structure formed by the repairing method is more stable and reliable, the scrapping rate of related products is reduced, and the yield of the related products is improved.
Based on the same inventive concept, the invention also provides a PSM mask blank defect repairing device.
In one embodiment of the present invention, a PSM reticle white defect repair apparatus includes a memory, a processor, and a PSM reticle white defect repair program stored on the memory and executable on the processor, the PSM reticle white defect repair program configured to implement the steps of the PSM reticle white defect repair method of any of the embodiments described above.
The following describes in detail a method, a device, equipment and a storage medium for repairing white defects of a PSM mask plate applied to the implementation of the technology of the invention:
referring to fig. 6, fig. 6 is a schematic structural view of a PSM reticle white defect repair apparatus according to the present invention;
as shown in fig. 6, the apparatus may include: a processor 1001, such as a central processing unit (Central Processing Unit, CPU), a communication bus 1002, a user interface 1003, a network interface 1004, a memory 1005. Wherein the communication bus 1002 is used to enable connected communication between these components. The user interface 1003 may include smart phones, tablet devices, and handheld computers (PDAs, personal Digital Assistants) and the like, and the optional user interface 1003 may also include standard wired, wireless interfaces. The network interface 1004 may optionally include a standard wired interface, a Wireless interface (e.g., a Wireless-Fidelity (Wi-Fi) interface). The Memory 1005 may be a high-speed random access Memory (Random Access Memory, RAM) Memory or a stable nonvolatile Memory (NVM), such as a disk Memory. The memory 1005 may also optionally be a storage device separate from the processor 1001 described above.
It will be appreciated by those skilled in the art that the structure shown in fig. 6 is not limiting of the apparatus and may include more or fewer components than shown, or certain components may be combined, or a different arrangement of components.
As shown in fig. 6, an operating system, a data storage module, a network communication module, a user interface module, and a PSM reticle white defect repair program may be included in the memory 1005 as one storage medium.
In the device shown in fig. 6, the network interface 1004 is mainly used for data communication with other devices; the user interface 1003 is mainly used for data interaction with user equipment; the processor 1001 and the memory 1005 in the PSM mask blank defect repair apparatus of the present invention may be disposed in the apparatus, and the PSM mask blank defect repair apparatus invokes the PSM mask blank defect repair program stored in the memory 1005 through the processor 1001, and executes the PSM mask blank defect repair method provided by the embodiment of the present invention.
Furthermore, based on the same inventive concept, the present invention also proposes a computer-readable storage medium.
In this embodiment, a computer readable storage medium has a computer program stored thereon, which when executed by one or more processors, implements the steps of the PSM reticle white defect repair method of any of the embodiments described above. Therefore, a detailed description will not be given here. In addition, the description of the beneficial effects of the same method is omitted. For technical details not disclosed in the embodiments of the computer-readable storage medium according to the present application, please refer to the description of the method embodiments of the present application. As an example, the program instructions may be deployed to be executed on one computing device or on multiple computing devices at one site or distributed across multiple sites and interconnected by a communication network.
Finally, it should be noted that the foregoing reference numerals of the embodiments of the present invention are merely for describing the embodiments, and do not represent the advantages and disadvantages of the embodiments. The above embodiments are only optional embodiments of the present invention, and not limiting the scope of the present invention, and all equivalent structures or equivalent processes using the descriptions of the present invention and the accompanying drawings or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (8)
1. A method for repairing a white defect of a PSM reticle, the method comprising:
sequentially processing and forming a shading layer and a phase shift layer which are stacked on a transparent substrate;
after the light shielding layer and/or the phase shift layer are formed, performing defect inspection on the light shielding layer and/or the phase shift layer to obtain the position of a white defect;
repairing the white defects of the light shielding layer and/or the phase shift layer according to the positions of the white defects;
when the light shielding layer and the phase shifting layer both have the white defects, photoresist is coated at the positions of the light shielding layer and the phase shifting layer with the white defects respectively, and a first area to be exposed and a second area to be exposed are correspondingly formed; a first photoresist is arranged at the position of the shading layer corresponding to the first region to be exposed, and a second photoresist is arranged at the position of the phase shifting layer corresponding to the second region to be exposed;
exposing the first region to be exposed and the second region to be exposed respectively, and stripping the first photoresist and the second photoresist respectively to form a first region to be repaired and a second region to be repaired;
judging whether the first area to be repaired and the second area to be repaired are overlapped or not;
if yes, the first repair material is used for repairing the first area to be repaired and the second area to be repaired respectively; the first repair material is the same as the material for preparing the light shielding layer;
if not, providing a first repair material and a second repair material, and repairing the first to-be-repaired area and the second to-be-repaired area respectively by utilizing a local deposition mode; the first repair material is the same as the material for preparing the light shielding layer, and the second repair material is the same as the material for preparing the phase shift layer.
2. The PSM reticle white defect repair method of claim 1, wherein after the forming of the light shielding layer and/or the phase shift layer, performing defect inspection on the light shielding layer and/or the phase shift layer to obtain a white defect location comprises:
after the light shielding layer and the phase shifting layer are formed, performing defect inspection on the light shielding layer and the phase shifting layer;
and marking the position with the white defect on the light shielding layer and/or the phase shifting layer to obtain the position of the white defect.
3. The PSM reticle white defect repair method of claim 2, wherein the repairing the white defect of the light shielding layer and/or the phase shift layer according to the position of the white defect comprises:
when the light shielding layer or the phase shift layer has the white defect, a surface repair mode is selected to repair the white defect of the light shielding layer or the phase shift layer corresponding to the position of the white defect.
4. The PSM reticle white defect repair method of claim 3, wherein when the light shielding layer or the phase shift layer has the white defect, the step of selecting a surface repair to repair the white defect of the light shielding layer or the phase shift layer corresponding to the location of the white defect comprises:
coating photoresist on the surface of the PSM mask plate, and forming a third area to be exposed at a position corresponding to the white defect on any one of the light shielding layer and the phase shift layer; a third photoresist is arranged at the position of the shading layer or the phase shift layer corresponding to the third area to be exposed;
exposing the third area to be exposed, and stripping the third photoresist to form a third area to be repaired;
repairing the third area to be repaired by using a surface deposition mode;
or,
coating photoresist on the surface of the PSM mask plate, and forming a fourth area to be exposed at a position corresponding to the white defect on the other one of the light shielding layer and the phase shift layer; a fourth photoresist is formed at a position of the other one of the light shielding layer and the phase shift layer corresponding to the fourth area to be exposed;
exposing the fourth area to be exposed, and stripping the fourth photoresist to form a fourth area to be repaired;
and repairing the fourth area to be repaired by using a surface deposition mode.
5. The PSM reticle white defect repair method of claim 1, wherein after the forming of the light shielding layer and/or the phase shift layer, performing defect inspection on the light shielding layer and/or the phase shift layer to obtain a white defect location comprises:
after the light shielding layer is formed, performing defect inspection on the light shielding layer to obtain a first inspection result;
judging whether the light shielding layer has white defects or not according to the first checking result;
if yes, marking the position with the white defect on the shading layer to obtain a second white defect position;
if not, after forming the phase shift layer, performing defect inspection on the phase shift layer to obtain a second inspection result, and judging whether the phase shift layer has white defects according to the second inspection result; if yes, marking the position with the white defect on the phase shift layer to obtain the position of the first white defect; if not, the position of the white defect is none.
6. The PSM reticle white defect repair method of claim 5, wherein the repairing the white defect of the light shielding layer and/or the phase shift layer according to the position of the white defect comprises:
repairing the white defect of the shading layer by utilizing a local deposition or surface deposition mode according to the position of the second white defect;
and repairing the white defect of the phase shift layer by utilizing the local deposition or the surface deposition according to the position of the first white defect.
7. A PSM reticle white defect repair apparatus, the apparatus comprising: a memory, a processor, and a PSM reticle white defect repair program stored on the memory and executable on the processor, the PSM reticle white defect repair program configured to implement the steps of the PSM reticle white defect repair method of any of claims 1 to 6.
8. A computer readable storage medium, wherein the storage medium has stored thereon a computer program, which when executed by one or more processors, implements the steps of the PSM reticle white defect repair method of any of claims 1 to 6.
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| JPH03196041A (en) * | 1989-12-26 | 1991-08-27 | Hitachi Ltd | Method for correcting mask and mask |
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| CN113985696A (en) * | 2021-11-10 | 2022-01-28 | 泉意光罩光电科技(济南)有限公司 | Mask repairing method and device, mask repairing control equipment and storage medium |
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| US7005215B2 (en) * | 2002-10-28 | 2006-02-28 | Synopsys, Inc. | Mask repair using multiple exposures |
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| JPH03196041A (en) * | 1989-12-26 | 1991-08-27 | Hitachi Ltd | Method for correcting mask and mask |
| JPH1090873A (en) * | 1996-09-17 | 1998-04-10 | Toshiba Corp | Manufacture of phase shift mask |
| US6103430A (en) * | 1998-12-30 | 2000-08-15 | Micron Technology, Inc. | Method for repairing bump and divot defects in a phase shifting mask |
| CN111830779A (en) * | 2020-08-27 | 2020-10-27 | 泉芯集成电路制造(济南)有限公司 | Method and system for processing residual defect of phase shift mask and phase shift mask |
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