CN113985696A - Mask repairing method and device, mask repairing control equipment and storage medium - Google Patents
Mask repairing method and device, mask repairing control equipment and storage medium Download PDFInfo
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- CN113985696A CN113985696A CN202111326898.8A CN202111326898A CN113985696A CN 113985696 A CN113985696 A CN 113985696A CN 202111326898 A CN202111326898 A CN 202111326898A CN 113985696 A CN113985696 A CN 113985696A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000003860 storage Methods 0.000 title claims abstract description 11
- 230000010363 phase shift Effects 0.000 claims abstract description 184
- 238000005530 etching Methods 0.000 claims abstract description 133
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000010894 electron beam technology Methods 0.000 claims abstract description 36
- 230000008439 repair process Effects 0.000 claims description 148
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004590 computer program Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 238000004891 communication Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000009471 action Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 238000012795 verification Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- WMVRXDZNYVJBAH-UHFFFAOYSA-N dioxoiron Chemical compound O=[Fe]=O WMVRXDZNYVJBAH-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000005078 molybdenum compound Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The application provides a mask repairing method and device, mask repairing control equipment and a storage medium, and relates to the technical field of semiconductor manufacturing processes. After the characteristic dimension line width value currently mapped by the target phase shift mask plate with the phase shift material residue is obtained, the target repairing times of the single etching repairing operation are determined under the condition that the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range, then the single etching repairing operation is executed at the target repairing area of the target phase shift mask plate corresponding to the phase shift material residue by matching the electron beam with the etching gas and the buffer gas by repeating the target repairing times, so that the specific repairing force of the single etching repairing operation in the etching repairing process is effectively controlled by using the buffer characteristic of the buffer gas, the characteristic dimension line width mapped by the repaired mask plate is ensured to be in accordance with the expected specification, and the extra damage caused by the etching repairing process is reduced as much as possible.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing processes, in particular to a mask repairing method and device, mask repairing control equipment and a storage medium.
Background
With the continuous development of science and technology, in order to meet different requirements of various industries on semiconductor devices, a semiconductor process technology needs to be ensured to have higher photoetching resolution, and various photoetching resolution enhancement technologies are generated accordingly. The Phase Shift Mask (PSM) technique is a commonly used lithography resolution enhancement technique, and can ensure that the light intensity of dark areas on the surface of a silicon wafer is weakened due to destructive interference by generating a 180-degree Phase difference between light beams in adjacent light-transmitting areas of a Mask pattern on a Mask, thereby improving the observation contrast and the lithography resolution.
At present, a conventional phase shift mask usually requires forming a phase shift layer on a transparent substrate, forming a light-shielding layer on the phase shift layer, and then forming a final mask pattern by etching the light-shielding layer and the phase shift layer using photoresist. In the phase shift mask manufacturing process, a certain amount of phase shift material is often left on the sidewall surface of the phase shift layer for forming the mask pattern region due to factors such as process flow differences, so that the feature size line width of the exposure pattern formed by the phase shift mask in actual use does not meet the expected specification.
Disclosure of Invention
In view of the above, an object of the present application is to provide a mask repairing method and apparatus, a mask repairing control device, and a storage medium, which can perform etching repairing on a phase shift mask with a phase shift material residue, and effectively control a specific repairing strength of the etching repairing, so that a feature size line width of an exposure pattern corresponding to the repaired phase shift mask stably meets an expected specification, and at the same time, an extra damage to the phase shift mask caused by the etching repairing is reduced as much as possible.
In order to achieve the above purpose, the embodiments of the present application employ the following technical solutions:
in a first aspect, the present application provides a reticle repair method, the method comprising:
obtaining a feature size line width value currently mapped by a target phase shift mask, wherein a phase shift layer of the target phase shift mask has phase shift material residues in a mask pattern area of the target phase shift mask;
detecting whether the characteristic dimension line width value is in a qualified device line width range of the expected device line width value;
under the condition that the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range, determining corresponding target repairing times according to the characteristic dimension line width value, the expected device line width value and a line width expansion value corresponding to single etching repairing operation;
and aiming at a target repairing area of the target phase shift mask corresponding to the phase shift material residue, repeatedly performing single etching repairing operation on the target repairing area by adopting electron beams in cooperation with etching gas and buffer gas for the number of times of target repairing, so that the characteristic dimension line width value of the target phase shift mask after repairing is in the line width range of the qualified device.
In an optional embodiment, the step of determining the corresponding target repair times according to the feature size line width value, the expected device line width value, and the line width expansion value corresponding to a single etching repair operation includes:
calculating the difference value between the expected device line width value and the characteristic dimension line width value to obtain a line width difference value;
carrying out division operation on the line width difference value and the line width expansion value to obtain a corresponding expected expansion multiple;
and rounding the decimal part of the expected expansion multiple, and then adding the rounded decimal part and the integer part of the expected expansion multiple to obtain the target repairing times.
In an alternative embodiment, the step of performing a single etching repair operation at the target repair area using an electron beam in cooperation with an etching gas and a buffer gas includes:
injecting etching gas and buffer gas into the vacuum chamber where the target phase shift mask is located;
and controlling an electron beam generator to emit electron beams towards the target repairing area according to the etching operation duration corresponding to the single etching repairing operation, so that the emitted electron beams bombard the etching gas into the target repairing area under the buffering action of the buffer gas for etching.
In an alternative embodiment, the emission direction of the electron beam is inclined with respect to the plate surface normal direction of the transparent substrate of the target phase shift mask, and the electron beam does not directly contact the transparent substrate after being emitted.
In an alternative embodiment, the energy voltage of the electron beam is 0.6KV, the etching operation temperature of the etching gas is-30 ℃ to-15 ℃, and the injection flow rate of the buffer gas is 1 sccm.
In an alternative embodiment, the method further comprises:
configuring corresponding specification fluctuation percentages for the expected device line width values;
and calculating the upper and lower fluctuation by adopting the specification fluctuation percentage by taking the expected device line width value as a reference to obtain a line width lower limit value and a line width upper limit value of the qualified device line width range, wherein the expected device line width value is positioned in the middle of the line width lower limit value and the line width upper limit value.
In a second aspect, the present application provides a reticle repair apparatus, the apparatus comprising:
the mask plate line width acquisition module is used for acquiring a line width value of a characteristic dimension currently mapped by a target phase shift mask plate, wherein a phase shift material residue exists in a mask pattern area of the target phase shift mask plate on a phase shift layer of the target phase shift mask plate;
the mask plate line width detection module is used for detecting whether the characteristic dimension line width value is in the qualified device line width range of the expected device line width value;
the etching repair frequency determining module is used for determining corresponding target repair frequency according to the characteristic dimension line width value, the expected device line width value and a line width expansion value corresponding to single etching repair operation under the condition that the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range;
and the mask etching and repairing module is used for repeatedly performing single etching and repairing operation on a target repairing area of the target phase shift mask corresponding to the phase shift material residue by adopting electron beams in cooperation with etching gas and buffer gas for the target repairing times so as to enable the characteristic dimension line width value of the repaired target phase shift mask to be in the line width range of the qualified device.
In an alternative embodiment, the apparatus further comprises:
the line width fluctuation configuration module is used for configuring the corresponding specification fluctuation percentage aiming at the line width value of the expected device;
and the device line width fluctuation module is used for performing fluctuation calculation on the expected device line width value serving as a reference by adopting the specification fluctuation percentage to obtain a line width lower limit value and a line width upper limit value of the qualified device line width range, wherein the expected device line width value is positioned in the middle of the line width lower limit value and the line width upper limit value.
In a third aspect, the present application provides a reticle repair control apparatus, including a processor and a memory, where the memory stores a computer program executable by the processor, and the processor can execute the computer program to implement the reticle repair method according to any one of the foregoing embodiments.
In a fourth aspect, the present application provides a storage medium having a computer program stored thereon, where the computer program, when executed by a processor, implements the reticle repairing method according to any one of the foregoing embodiments.
In this case, the beneficial effects of the embodiments of the present application include the following:
after the characteristic dimension line width value currently mapped by the target phase shift mask plate with the phase shift material residue in the corresponding mask pattern area is obtained, under the condition that the characteristic dimension line width value is detected to be smaller than the line width lower limit value of the qualified device line width range in which the expected device line width value is located, the corresponding target repairing times are determined according to the characteristic dimension line width value, the expected device line width value and the line width expansion value corresponding to single etching repairing operation, then aiming at the target repairing area of the target phase shift mask plate corresponding to the phase shift material residue, the target repairing times are repeated, the single etching repairing operation is executed in the target repairing area by adopting the electron beam matched with etching gas and buffer gas, thereby the specific repairing force of the single etching repairing operation is effectively controlled by utilizing the buffer property of the buffer gas, and the single etching repairing operation is executed for the target repairing times by the phase shift mask plate, ensuring that the characteristic dimension line width of the exposure pattern corresponding to the repaired phase shift mask stably meets the expected specification, and reducing the extra damage to the phase shift mask caused by etching repair treatment as much as possible.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic diagram illustrating a reticle repair control apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a target phase shift mask without etching repair according to an embodiment of the present disclosure;
FIG. 3 is a schematic flow chart of a reticle repair method according to an embodiment of the present application;
FIG. 4 is a flowchart illustrating the sub-steps included in step S330 in FIG. 3;
FIG. 5 is a flowchart illustrating the sub-steps included in step S340 in FIG. 3;
FIG. 6 is a schematic structural diagram of a target phase shift mask upon completion of an etch repair process according to an embodiment of the present disclosure;
FIG. 7 is a second flowchart illustrating a reticle repair method according to an embodiment of the present application;
FIG. 8 is a schematic diagram of a reticle repair apparatus according to an embodiment of the present application;
fig. 9 is a second schematic view illustrating a composition of a reticle repair apparatus according to an embodiment of the present application.
Icon: 10-mask repair control equipment; 11-a memory; 12-a processor; 13-a communication unit; 100-a reticle repair device; 20-target phase shift mask; 21-a transparent substrate; 22-a phase shift layer; 23-a light-shielding layer; 24-phase shift material residue; 25-pattern trenches; 301-mask pattern area; 302-target repair area; 110-mask plate line width obtaining module; 120-mask plate line width detection module; 130-etching repair times determination module; 140-a reticle etch repair module; 150-line width fluctuation configuration module; 160-device line width fluctuation module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it is to be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like are used in an orientation or positional relationship as indicated in the drawings, or as would be ordinarily understood by those skilled in the art, simply for convenience in describing and simplifying the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be in any way limiting of the present application.
In the description of the present application, it is further noted that relational terms such as the terms first and second, and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The applicant has found through diligent research that, in order to make the feature line width of the exposure pattern corresponding to a certain amount of phase shift material (e.g., molybdenum silicide material) remaining in the mask pattern region reach the desired specification during a specific exposure, the mainstream processing scheme in the industry at present is to directly etch the remaining phase shift material with an electron beam and an etching gas (e.g., xenon difluoride (XeF 2)) to adjust the feature line width of the corresponding exposure pattern to meet the desired specification. However, it is worth noting that the etching method often has the characteristic that the repair strength is uncontrollable, and a single etching operation directly based on the etching gas often fails to make the feature size line width of the exposure pattern corresponding to the phase shift mask meet the expected specification, but continuing to execute the single etching operation even if the feature size line width of the corresponding exposure pattern meets the expected specification, the transparent substrate of the phase shift mask is over-etched, and additional damage occurs, so that the yield of the repaired phase shift mask is not high.
Under the condition, the phase shift mask with the phase shift material residues is subjected to etching repair treatment with effectively controllable repair force, so that the characteristic dimension line width of an exposure pattern corresponding to the repaired phase shift mask stably meets the expected specification, the extra damage of the phase shift mask caused by the etching repair treatment is reduced as much as possible, and the yield of the repaired phase shift mask is improved.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a reticle repair control apparatus 10 according to an embodiment of the present disclosure. In the embodiment of the present application, the mask repair control device 10 can interact with a mask etching system, so as to control the mask etching system to perform etching repair processing on a target phase shift mask with a phase shift material residue, and effectively control the specific repair strength of the etching repair processing, so that the characteristic dimension line width of an exposure pattern corresponding to the repaired phase shift mask stably meets an expected specification, and simultaneously, the extra damage caused by the etching repair processing on the phase shift mask is reduced as much as possible, so as to improve the yield of the repaired phase shift mask. The target phase shift mask can be a phase shift mask with residual phase shift material which is not etched and repaired, or a phase shift mask with residual phase shift material which is subjected to at least one etching and repairing operation.
In this embodiment, the reticle repair control apparatus 10 may be, but is not limited to, a computer apparatus, a notebook computer, or the like. The reticle repair control apparatus 10 may include a memory 11, a processor 12, a communication unit 13, and a reticle repair device 100. The various elements of the memory 11, the processor 12 and the communication unit 13 are electrically connected to each other directly or indirectly to realize data transmission or interaction. For example, the memory 11, the processor 12 and the communication unit 13 may be electrically connected to each other through one or more communication buses or signal lines.
In this embodiment, the Memory 11 may be, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Read-Only Memory (EPROM), an electrically Erasable Read-Only Memory (EEPROM), and the like. The memory 11 is used for storing a computer program, and the processor 12 can execute the computer program after receiving an execution instruction.
In this embodiment, the memory 11 is further configured to store a desired device linewidth value for a target phase shift reticle configuration and a qualified device linewidth range in which the desired device linewidth value is located. Wherein the expected device linewidth value is used for representing the optimal characteristic dimension linewidth which can be achieved by the semiconductor device manufactured by the target phase shift mask plate, and the qualified device linewidth range is used for representing the characteristic dimension linewidth range which can be represented by the semiconductor device manufactured by the target phase shift mask plate when the semiconductor device is qualified.
In this embodiment, the processor 12 may be an integrated circuit chip having signal processing capabilities. The Processor 12 may be a general-purpose Processor including at least one of a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), a Network Processor (NP), a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, and discrete hardware components. The general purpose processor may be a microprocessor or the processor may be any conventional processor or the like that implements or executes the methods, steps and logic blocks disclosed in the embodiments of the present application.
In this embodiment, the communication unit 13 is configured to establish a communication connection between the reticle repair control apparatus 10 and the mask effect verification system and the reticle etching system via a network, and to transmit and receive data via the network, where the network includes a wired communication network and a wireless communication network. For example, the mask repair control device 10 may obtain, from the mask effect verification system through the communication unit 13, a characteristic dimension line width value of an exposure pattern that a certain phase shift mask can exhibit during actual exposure/simulated exposure, and the mask repair control device 10 may also control, through the communication unit 13, the mask etching system to perform etching repair processing on the phase shift mask and effectively control a specific repair strength of the etching repair processing, so that while ensuring that a characteristic dimension line width of an exposure pattern corresponding to the repaired phase shift mask stably meets an expected specification, an additional damage caused by the etching repair processing on the phase shift mask is reduced as much as possible, so as to improve a yield of the repaired phase shift mask.
In this embodiment, the reticle repair apparatus 100 comprises at least one software function module that can be stored in the memory 11 in the form of software or firmware or that is solidified in the operating system of the reticle repair control device 10. The processor 12 may be used to execute executable modules stored in the memory 11, such as software functional modules and computer programs included in the reticle repair device 100. The mask repair control device 10 may perform etching repair processing on the phase shift mask with the phase shift material residue through the mask repair device 100, and effectively control the specific repair strength of the etching repair processing, so that the characteristic dimension line width of the exposure pattern corresponding to the repaired phase shift mask stably meets the expected specification, and simultaneously, the extra damage to the phase shift mask caused by the etching repair processing is reduced as much as possible, so as to improve the yield of the repaired phase shift mask.
It is to be understood that the block diagram shown in fig. 1 is merely one constituent schematic diagram of the reticle repair control apparatus 10, and that the reticle repair control apparatus 10 may also include more or fewer components than shown in fig. 1, or have a different configuration than shown in fig. 1. The components shown in fig. 1 may be implemented in hardware, software, or a combination thereof.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a target phase shift mask 20 that has not been etched and repaired according to an embodiment of the present disclosure. In this embodiment, the target phase shift mask 20 may include a transparent substrate 21, and a phase shift layer 22 and a light shielding layer 23 stacked on the transparent substrate 21, wherein the light shielding layer 23 and the phase shift layer 22 are provided with pattern grooves 25 for representing a mask pattern, so that the pattern grooves 25 on the light shielding layer 23 and the pattern grooves 25 on the phase shift layer 22 cooperate with each other to form a mask pattern region 301 of the target phase shift mask 20. The pattern groove 25 formed on the light-shielding layer 23 is used to represent an effective range of the mask pattern region 301, and the pattern groove 25 formed on the phase shift layer 22 is opened in the range of the pattern groove 25 formed on the light-shielding layer 23 and is used to represent a distribution condition of a specific mask pattern. A certain amount of phase shift material remains on the surface of the sidewall of the phase shift layer 22 forming the pattern trench 25, so as to form a phase shift material residue 24 adhering to the trench sidewall in the pattern trench 25 formed on the phase shift layer 22, which results in that the phase shift layer 22 in the mask pattern region 301 cannot generate an expected phase shift effect and a destructive interference phenomenon, and the feature size line width of the exposure pattern corresponding to the current target phase shift mask 20 does not meet an expected specification.
At this time, the target repair region 302 of the target phase shift mask 20 that needs to be etched and repaired is a phase shift layer region covering the phase shift material residue 24, wherein a projection region of the phase shift material residue 24 on the plane of the plate surface of the transparent substrate 21 is located in a projection region of the target repair region 302 on the plane of the plate surface of the transparent substrate 21, so as to ensure that a feature size line width value of an exposure pattern mapped by the mask effect verification system of the repaired target phase shift mask 20 is within a qualified device line width range. In one embodiment of the present embodiment, the light shielding layer 23 is made of any one of chromium metal, iron dioxide and chromium molybdenum compound, and the transparent substrate 21 is made of quartz material.
In the present application, in order to ensure that the mask repair control device 10 can perform etching repair processing with effectively controllable repair strength on the target phase shift mask 20 with the phase shift material residue 24, so that the characteristic dimension line width of the exposure pattern corresponding to the repaired phase shift mask stably meets the expected specification, the additional damage caused by the etching repair processing on the phase shift mask is reduced as much as possible, and the yield of the repaired phase shift mask is improved.
Referring to fig. 3, fig. 3 is a schematic flow chart of a reticle repairing method according to an embodiment of the present application. In an embodiment of the present application, the reticle repairing method shown in fig. 2 may include steps S310 to S340.
Step S310, obtaining a feature dimension line width value currently mapped by the target phase shift mask, wherein a phase shift layer of the target phase shift mask has phase shift material residues in a mask pattern area of the target phase shift mask.
In this embodiment, the reticle repair control apparatus 10 may obtain, from the mask effect verification system through the communication unit 13, a feature size line width value of an exposure pattern that is mapped after the target phase shift reticle 20 is actually exposed or simulated exposed in a current state.
Step S320, detecting whether the feature size linewidth value is within the qualified device linewidth range where the expected device linewidth value is located.
In this embodiment, after obtaining the feature size line width value currently corresponding to the target phase shift mask 20, the mask repair control device 10 compares the feature size line width value with the stored line width lower limit value and line width upper limit value of the qualified device line width range, respectively, to determine whether the feature size line width value is within the qualified device line width range. If the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range or the characteristic dimension line width value is larger than the line width upper limit value of the qualified device line width range, the characteristic dimension line width value can be judged to be out of the qualified device line width range. If the feature line width value is greater than or equal to the line width lower limit and the feature line width value is less than or equal to the line width upper limit, it may be determined that the feature line width value is within the qualified device line width range.
Step S330, under the condition that the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range, determining the corresponding target repairing times according to the characteristic dimension line width value, the expected device line width value and the line width expansion value corresponding to the single etching repairing operation.
In the present embodiment, the single etching repair operation is performed by using an electron beam in combination with an etching gas and a buffer gas, in the process, the buffer gas does not realize the etching effect under the action of the electron beam, but can be mixed with the etching gas, and the etching force corresponding to the etching gas is buffered and adjusted under the action of the electron beam, thereby effectively controlling the specific repair force of the single etching repair operation by using the buffer characteristic of the buffer gas, wherein the repair effect of the specific repair force on the target phase shift mask 20 can be expressed by the line width difference between the feature size line width values respectively corresponding to the target phase shift mask 20 before and after the single etching repair operation, the line width expansion value may be used to represent a line width difference between feature size line width values of the target phase shift mask 20 before and after a single etching repair operation.
It can be understood that the expected device line width value is located in the middle of the qualified device line width range, the line width expansion value corresponding to the single etching repair operation needs to be smaller than the line width interval length of the qualified device line width range, and the line width interval length is the line width difference between the upper limit value and the lower limit value of the line width of the qualified device line width range, so that the mask repair control device 10 can correspondingly determine the target repair times required to be executed by the single etching repair operation when the current characteristic dimension line width value of the target phase shift mask 20 is smaller than the lower limit value of the line width, so that the characteristic dimension line width of the exposure pattern corresponding to the target phase shift mask 20 after the etching repair processing can not exceed the upper limit value of the line width of the qualified device line width range, and ensure that the characteristic dimension line width of the exposure pattern corresponding to the target phase shift mask 20 after the repair stably meets the expected specification Meanwhile, the extra damage to the target phase shift mask 20 caused by the etching repair process can be reduced as much as possible, and the high yield of the repaired target phase shift mask 20 is ensured.
Optionally, referring to fig. 4, fig. 4 is a flowchart illustrating the sub-steps included in step S330 in fig. 3. In this embodiment, the step of determining the corresponding target repair times in step S330 according to the feature size line width value, the expected device line width value, and the line width expansion value corresponding to a single etching repair operation may include substeps S331 to S333, so as to solve the target repair times required to be executed by the single etching repair operation for the current phase shift layer condition of the target phase shift mask 20, so that the feature size line width of the exposure pattern corresponding to the target phase shift mask 20 after the etching repair process does not exceed the line width upper limit value of the qualified device line width range.
In the substep S331, a difference between the desired device linewidth value and the feature dimension linewidth value is calculated to obtain a linewidth difference value.
And a substep S332 of performing division operation on the line width difference value and the line width expansion value to obtain a corresponding expected expansion multiple.
And a substep S333 of rounding the decimal part of the desired expansion multiple and adding the rounded decimal part and the integer part of the desired expansion multiple to obtain the target repairing times.
In this embodiment, when the feature size line width value currently mapped by the target phase shift mask 20 is smaller than the line width lower limit value of the qualified device line width range, the line width difference between the expected device line width value and the feature size line width value is certainly larger than 0.5 times of the line width expansion value, and at this time, at least one single etching repair operation may be performed to ensure that the feature size line width value corresponding to the repaired target phase shift mask 20 is stably transited into the qualified device line width range without exceeding the qualified device line width range, so that the feature size line width of the exposure pattern corresponding to the repaired phase shift mask stably meets the expected specification, and the additional damage to the phase shift mask caused by the etching repair process is reduced as much as possible.
Step S340, aiming at a target repair area of the target phase shift mask corresponding to the phase shift material residue, performing single etching repair operation on the target repair area by adopting electron beams in cooperation with etching gas and buffer gas repeatedly for the target repair times, and enabling the characteristic dimension line width value of the target phase shift mask after repair to be in the line width range of qualified devices.
In this embodiment, after determining the target repair times required to be performed by a single etching repair operation to be solved for the current phase-shift layer condition of the target phase-shift mask 20, the electron beam and the etching gas and the buffer gas are correspondingly used to perform the single etching repair operation by circulating the target repair times in the target repair area 302 of the target phase-shift mask 20, so as to effectively control the specific repair strength of the single etching repair operation by using the buffer characteristic of the buffer gas, thereby implementing the etching repair process with effectively controllable repair strength on the phase-shift mask having the phase-shift material residue 24, so that the characteristic dimension line width of the exposure pattern corresponding to the repaired phase-shift mask stably meets the expected specification, and simultaneously reduces the additional damage to the phase-shift mask caused by the etching repair process as much as possible, the yield of the repaired phase shift mask is improved.
Optionally, referring to fig. 5, fig. 5 is a flowchart illustrating the sub-steps included in step S340 in fig. 3. In this embodiment, the step of performing a single etching repair operation on the target repair region 302 by using the electron beam in cooperation with the etching gas and the buffer gas in the step S340 may include the sub-steps S341 and S342, so as to ensure that the transparent substrate 21 of the target phase shift mask 20 is prevented from being damaged while the mask repair effect is achieved by the single etching repair operation.
In the substep S341, an etching gas and a buffer gas are injected into the vacuum chamber in which the target phase shift mask is located.
And a substep S342, controlling the electron beam generator to emit electron beams towards the target repairing area according to the etching operation duration corresponding to the single etching repairing operation, so that the emitted electron beams bombard the etching gas into the target repairing area under the buffering action of the buffer gas for etching.
In this embodiment, the emission direction of the electron beam is inclined with respect to the normal direction of the transparent substrate 21 of the target phase shift mask 20, and the electron beam does not directly contact the transparent substrate 21 after being emitted, so as to ensure that the etching gas does not directly act on the transparent substrate 21 under the bombardment action of the electron beam, thereby effectively controlling the repair strength of a single etching repair operation and avoiding the occurrence of an over-etching phenomenon on the transparent substrate 21. Thus, the target repair region 302 in the target phase-shift mask 20 that has performed a single etching repair operation for the target number of repairs will have the shape structure shown in fig. 6.
In the process, the energy voltage of the electron beam needs to be maintained at 0.6KV, the etching operation temperature of the etching gas needs to be between minus 30 ℃ and minus 15 ℃, and the injection flow rate of the buffer gas is ensured to be 1sccm so as to maintain the stability of the line width expansion value of single etching repair operation. In one embodiment of this embodiment, the etching gas has an etching temperature of-23 ℃.
Therefore, the method can perform the etching repair processing with effectively controllable repair strength on the target phase shift mask with the phase shift material residues by executing the steps S310 to S340, so that the characteristic dimension line width of the exposure pattern corresponding to the repaired phase shift mask stably meets the expected specification, the extra damage to the phase shift mask caused by the etching repair processing is reduced as much as possible, and the yield of the repaired phase shift mask is improved.
It can be understood that, when the feature size line width value currently mapped by the target phase shift mask 20 is greater than the line width upper limit value of the qualified device line width range, the feature size line width value currently mapped by the target phase shift mask 20 can be shortened by performing deposition, growth and repair of phase shift material in the region where the phase shift layer 22 is over-etched and repaired, so that the feature size line width of the exposure pattern corresponding to the repaired phase shift mask stably steps into the qualified device line width range meeting the expected specification.
Optionally, referring to fig. 7, fig. 7 is a second schematic flowchart of a reticle repair method according to an embodiment of the present application. In an embodiment of the present application, the reticle repair method shown in fig. 7 may include steps S308 and S309 to determine the expected specification range of feature sizes of the target phase shift reticle 20.
Step S308, configuring a corresponding specification fluctuation percentage for the desired device linewidth value.
Step S309, performing fluctuation calculation by using the specification fluctuation percentage with the expected device linewidth value as the reference to obtain a linewidth lower limit value and a linewidth upper limit value of the qualified device linewidth range, wherein the expected device linewidth value is in the middle position of the linewidth lower limit value and the linewidth upper limit value.
In the present embodiment, the specification fluctuation percentage may be 1%, may also be 1.5%, and may also be 2%. The line width difference between the upper line width value and the desired device line width value may be expressed as a product of the desired device line width value and the specification fluctuation percentage, and the line width difference between the desired device line width value and the lower line width value may be expressed as a product of the desired device line width value and the specification fluctuation percentage.
Thus, the present application may determine the expected specification range of the feature size of the target phase shift mask 20 by performing the above steps S308 and S309.
In the present application, in order to ensure that the reticle repair control device 10 can execute the reticle repair method through the reticle repair device 100, the present application implements the aforementioned functions by dividing the reticle repair device 100 into functional modules. The specific components of the reticle repair device 100 provided in the present application are described below.
Referring to fig. 8, fig. 8 is a schematic diagram illustrating a composition of a reticle repair apparatus 100 according to an embodiment of the present disclosure. In an embodiment of the present application, the reticle repair apparatus 100 may include a reticle line width acquisition module 110, a reticle line width detection module 120, an etching repair number determination module 130, and a reticle etching repair module 140.
A mask line width obtaining module 110, configured to obtain a feature line width value currently mapped by a target phase shift mask, where a phase shift layer of the target phase shift mask has a phase shift material residue in a mask pattern area of the target phase shift mask.
A mask linewidth detection module 120 configured to detect whether the feature linewidth value is within a qualified device linewidth range where the expected device linewidth value is.
The etching repair frequency determining module 130 is configured to determine a corresponding target repair frequency according to the feature size line width value, the expected device line width value, and a line width expansion value corresponding to a single etching repair operation when it is detected that the feature size line width value is smaller than the line width lower limit value of the qualified device line width range.
And the mask etching and repairing module 140 is configured to repeat a target repairing operation on a target repairing region of the target phase shift mask corresponding to the phase shift material residue by using an electron beam in cooperation with an etching gas and a buffer gas for the target repairing times, so that a feature size line width value of the target phase shift mask after repairing is within the line width range of the qualified device.
Optionally, referring to fig. 9, fig. 9 is a second schematic view illustrating a composition of a reticle repair apparatus 100 according to an embodiment of the present disclosure. In an embodiment of the present application, the reticle repair apparatus 100 may further include a line width fluctuation configuration module 150 and a device line width fluctuation module 160.
A line width fluctuation configuration module 150, configured to configure a corresponding specification fluctuation percentage for the desired device line width value.
And a device line width fluctuation module 160, configured to perform fluctuation calculation using the specification fluctuation percentage based on the expected device line width value as a reference to obtain a line width lower limit value and a line width upper limit value of the qualified device line width range, where the expected device line width value is located between the line width lower limit value and the line width upper limit value.
It should be noted that the basic principle and the technical effect of the reticle repairing apparatus 100 provided in the embodiment of the present application are the same as those of the reticle repairing method described above. For a brief description, reference may be made to the above description of the reticle repair method, where this embodiment is not mentioned in part.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The apparatus embodiments described above are merely illustrative, and for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part. The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a readable storage medium. Based on such understanding, the technical solution of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product stored in a storage medium and including instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present application. And the aforementioned readable storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
To sum up, in the mask repair method and apparatus, the mask repair control device, and the storage medium provided in the present application, after obtaining the feature line width value currently mapped by the target phase shift mask with the phase shift material residue in the corresponding mask pattern region, when detecting that the feature line width value is smaller than the lower limit value of the line width of the qualified device line width range in which the desired device line width value is located, determining the corresponding target repair number according to the feature line width value, the desired device line width value, and the line width expansion value corresponding to the single etching repair operation, and then performing the single etching repair operation at the target repair region corresponding to the phase shift material residue by using the electron beam together with the etching gas and the buffer gas while repeating the target repair number, therefore, the specific repairing strength of the single etching repairing operation is effectively controlled by utilizing the buffer characteristic of the buffer gas, the characteristic dimension line width of an exposure figure corresponding to the repaired phase shift mask stably meets the expected specification by performing the single etching repairing operation on the phase shift mask for the target repairing times, and the extra damage to the phase shift mask caused by etching repairing treatment is reduced as much as possible.
The above description is only for various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and all such changes or substitutions are included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method for repairing a mask, the method comprising:
obtaining a feature size line width value currently mapped by a target phase shift mask, wherein a phase shift layer of the target phase shift mask has phase shift material residues in a mask pattern area of the target phase shift mask;
detecting whether the characteristic dimension line width value is in a qualified device line width range of the expected device line width value;
under the condition that the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range, determining corresponding target repairing times according to the characteristic dimension line width value, the expected device line width value and a line width expansion value corresponding to single etching repairing operation;
and aiming at a target repairing area of the target phase shift mask corresponding to the phase shift material residue, repeatedly performing single etching repairing operation on the target repairing area by adopting electron beams in cooperation with etching gas and buffer gas for the number of times of target repairing, so that the characteristic dimension line width value of the target phase shift mask after repairing is in the line width range of the qualified device.
2. The method of claim 1, wherein the linewidth extension value is less than a linewidth interval length of the qualified device linewidth range, the desired device linewidth value is at a middle position of the qualified device linewidth range, and the step of determining the corresponding target repair times according to the feature dimension linewidth value, the desired device linewidth value, and the linewidth extension value corresponding to a single etching repair operation comprises:
calculating the difference value between the expected device line width value and the characteristic dimension line width value to obtain a line width difference value;
carrying out division operation on the line width difference value and the line width expansion value to obtain a corresponding expected expansion multiple;
and rounding the decimal part of the expected expansion multiple, and then adding the rounded decimal part and the integer part of the expected expansion multiple to obtain the target repairing times.
3. The method of claim 1, wherein the step of performing a single etch repair operation at the target repair area using an electron beam in combination with an etch gas and a buffer gas comprises:
injecting etching gas and buffer gas into the vacuum chamber where the target phase shift mask is located;
and controlling an electron beam generator to emit electron beams towards the target repairing area according to the etching operation duration corresponding to the single etching repairing operation, so that the emitted electron beams bombard the etching gas into the target repairing area under the buffering action of the buffer gas for etching.
4. The method according to claim 3, wherein the emission direction of the electron beam is tilted with respect to a plate surface normal direction of a transparent substrate of the target phase shift mask, and the electron beam does not directly contact the transparent substrate after being emitted.
5. The method according to claim 3, wherein the energy voltage of the electron beam is 0.6KV, the etching operation temperature of the etching gas is-30 ℃ to-15 ℃, and the injection flow rate of the buffer gas is 1 sccm.
6. The method according to any one of claims 1-5, further comprising:
configuring corresponding specification fluctuation percentages for the expected device line width values;
and calculating the upper and lower fluctuation by adopting the specification fluctuation percentage by taking the expected device line width value as a reference to obtain a line width lower limit value and a line width upper limit value of the qualified device line width range, wherein the expected device line width value is positioned in the middle of the line width lower limit value and the line width upper limit value.
7. A reticle repair apparatus, the apparatus comprising:
the mask plate line width acquisition module is used for acquiring a line width value of a characteristic dimension currently mapped by a target phase shift mask plate, wherein a phase shift material residue exists in a mask pattern area of the target phase shift mask plate on a phase shift layer of the target phase shift mask plate;
the mask plate line width detection module is used for detecting whether the characteristic dimension line width value is in the qualified device line width range of the expected device line width value;
the etching repair frequency determining module is used for determining corresponding target repair frequency according to the characteristic dimension line width value, the expected device line width value and a line width expansion value corresponding to single etching repair operation under the condition that the characteristic dimension line width value is smaller than the line width lower limit value of the qualified device line width range;
and the mask etching and repairing module is used for repeatedly performing single etching and repairing operation on a target repairing area of the target phase shift mask corresponding to the phase shift material residue by adopting electron beams in cooperation with etching gas and buffer gas for the target repairing times so as to enable the characteristic dimension line width value of the repaired target phase shift mask to be in the line width range of the qualified device.
8. The apparatus of claim 7, further comprising:
the line width fluctuation configuration module is used for configuring the corresponding specification fluctuation percentage aiming at the line width value of the expected device;
and the device line width fluctuation module is used for performing fluctuation calculation on the expected device line width value serving as a reference by adopting the specification fluctuation percentage to obtain a line width lower limit value and a line width upper limit value of the qualified device line width range, wherein the expected device line width value is positioned in the middle of the line width lower limit value and the line width upper limit value.
9. A reticle repair control apparatus comprising a processor and a memory, the memory storing a computer program executable by the processor, the processor being capable of executing the computer program to implement the reticle repair method of any one of claims 1 to 6.
10. A storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the reticle repair method of any one of claims 1 to 6.
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Cited By (1)
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| CN117289544A (en) * | 2023-11-21 | 2023-12-26 | 深圳市龙图光罩股份有限公司 | PSM mask blank defect repairing method, equipment and storage medium |
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