KR20070068910A - Method of correcting critical dimesion of a phase shift mask - Google Patents

Method of correcting critical dimesion of a phase shift mask Download PDF

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KR20070068910A
KR20070068910A KR1020050130999A KR20050130999A KR20070068910A KR 20070068910 A KR20070068910 A KR 20070068910A KR 1020050130999 A KR1020050130999 A KR 1020050130999A KR 20050130999 A KR20050130999 A KR 20050130999A KR 20070068910 A KR20070068910 A KR 20070068910A
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pattern
light shielding
layer
phase shift
light
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KR1020050130999A
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Korean (ko)
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정호용
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주식회사 하이닉스반도체
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Publication of KR20070068910A publication Critical patent/KR20070068910A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A method for correcting a CD(Critical Dimension) of a phase shift mask is provided to enhance the uniformity of CD of the phase shift mask by correcting the CD of a light shielding pattern for defining a phase shift pattern before patterning a phase shift layer. A phase shift layer(110), a light shielding layer(120) and a resist pattern are sequentially formed on a transparent substrate(100). A light shielding pattern is formed on the resultant structure by etching selectively the light shielding layer using the resist pattern as an etch mask. The resist pattern is then removed therefrom. The CD of the light shielding pattern is measured. The CD of the light shielding pattern is selectively corrected. A phase shift pattern is formed on the resultant structure by patterning selectively the phase shift layer using the corrected phase shift pattern as an etch mask. Then, the light shielding pattern is removed therefrom.

Description

위상 반전 마스크의 임계 치수 보정방법{Method of correcting critical dimesion of a phase shift mask}{Method of correcting critical dimesion of a phase shift mask}

도 1a 내지 도 1c는 일반적인 어테뉴에이트 PSM의 제조방법을 설명하기 위한 단면도들이다.1A to 1C are cross-sectional views illustrating a method of manufacturing a general attenuate PSM.

도 2a 내지 도 2d는 본 발명의 실시예에 따른 위상 반전 마스크의 CD 보정방법을 설명하기 위한 각 공정별 단면도이다.2A to 2D are cross-sectional views of respective processes for explaining a CD correction method of a phase inversion mask according to an embodiment of the present invention.

도 3은 본 발명의 따른 차광 패턴의 CD 차이 및 차광층의 식각 시간과의 차이를 보여주는 그래프이다.3 is a graph showing the difference between the CD difference of the light shielding pattern and the etching time of the light shielding layer according to the present invention.

도 4는 본 발명의 실시예에 따라 형성된 위상 반전 패턴의 CD 균일도를 나타낸 그래프이다.4 is a graph showing the CD uniformity of the phase inversion pattern formed in accordance with an embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

100 : 석영 기판 110 : 위상 반전층100: quartz substrate 110: phase inversion layer

110a : 위상 반전 패턴 120 : 차광층110a: phase reversal pattern 120: light shielding layer

120a : CD 차이를 갖는 차광패턴 120b : CD 보정된 차광 패턴120a: shading pattern with CD difference 120b: shading pattern with CD correction

본 발명은 위상 반전 마스크의 임계 치수(critical dimension: 이하 CD)에 관한 것으로, 보다 구체적으로는 에테뉴에이트 위상 반전 마스크의 위상 반전 패턴의 CD 보정 방법에 관한 것이다. The present invention relates to a critical dimension (hereinafter CD) of a phase reversal mask, and more particularly to a CD correction method of a phase reversal pattern of an ethenate phase reversal mask.

반도체 소자의 고집적화됨에 따라, 보다 미세한 패턴을 형성하기 위한 포토리소그라피 공정이 비약적으로 발전되고 있다. 포토레지스트 패턴의 사이즈(선폭), 즉, 해상도는 공지된 레이라이 식(Rayleigh equation)식에 의하여 결정되는데, 상기 식에 따른 최소 선폭(minimum critical dimension)은 노광원의 파장에 비례하고, 프로젝션 렌즈의 개구수에는 반비례한다. 그러나, 포토레지스트 패턴의 선폭이 노광원의 파장보다 적어지게 되면, 회절(diffraction) 현상이 발생되어 기생 이미지(aerial image)를 발생시킨다. As semiconductor devices are highly integrated, photolithography processes for forming finer patterns have been rapidly developed. The size (line width) of the photoresist pattern, i.e. the resolution, is determined by the known Rayleigh equation, where the minimum critical dimension is proportional to the wavelength of the exposure source, It is inversely proportional to the numerical aperture. However, when the line width of the photoresist pattern becomes smaller than the wavelength of the exposure source, a diffraction phenomenon occurs to generate a parasitic image.

이러한 현상을 방지하기 위하여, 종래에는 위상 반전 마스크(Phase Shift Mask, 이하 PSM)가 제안되었다. PSM은 광의 진폭(amplitude)을 조절하는 바이너리(binary) 마스크와는 달리, 불필요한 회절 효과를 완화시키는 상쇄 간섭(destructive interference)을 이용하여 광의 위상을 조절한다. 이러한 PSM은 기판상에 위상 반전층에 의하여 180ㅀ위상 반전 패턴을 형성하는 어테뉴에이트(attenuated) PSM 및 트렌치에 의하여 180ㅀ위상 반전 영역을 형성하는 얼터네이팅(alternating) PSM이 있다.In order to prevent such a phenomenon, a phase shift mask (PSM) has been conventionally proposed. Unlike binary masks that control the amplitude of light, PSMs control the phase of light by using destructive interference to mitigate unnecessary diffraction effects. Such PSMs include an attenuated PSM that forms a 180-phase phase inversion pattern by a phase inversion layer on the substrate, and an alternating PSM that forms a 180-phase phase inversion region by a trench.

도 1a 내지 도 1c는 일반적인 어테뉴에이트 PSM의 제조방법을 설명하기 위한 단면도들이다.1A to 1C are cross-sectional views illustrating a method of manufacturing a general attenuate PSM.

먼저, 도 1a에 도시된 바와 같이, 석영 기판(10) 상에 위상 반전층(12), 크 롬층(14) 및 레지스트막을 피복한다음, 전자빔 리소그라피 방식에 의해 상기 레지스트막을 노광한다. 다음 노광된 레지스트막을 현상하여, 레지스트 패턴(16)을 형성한다. 상기 레지스트 패턴(16)의 형태로 상기 크롬층(14)을 식각한다.First, as shown in FIG. 1A, the phase inversion layer 12, the chromium layer 14, and the resist film are coated on the quartz substrate 10, and then the resist film is exposed by electron beam lithography. Next, the exposed resist film is developed to form a resist pattern 16. The chromium layer 14 is etched in the form of the resist pattern 16.

다음으로, 도 1b에 도시된 바와 같이, 패터닝된 크롬층(14)을 마스크로 하여, 상기 위상 반전층(12)을 패터닝하여, PSM이 완성된다. Next, as shown in FIG. 1B, the phase inversion layer 12 is patterned using the patterned chromium layer 14 as a mask, thereby completing the PSM.

도 1c를 참조하여, 상기 잔류하는 레지스트 패턴(16) 및 크롬층(14)을 제거한다. 이때, 도면에는 도시되지 않았지만, 상기 PSM의 가장자리 부분에 불필요한 광의 입사를 차단하기 위하여 차광막인 상기 크롬층(14)을 잔류시킬 수 있다. Referring to FIG. 1C, the remaining resist pattern 16 and the chromium layer 14 are removed. In this case, although not shown in the drawing, the chromium layer 14, which is a light shielding film, may be left in order to block unnecessary light incident on the edge portion of the PSM.

상기 PSM은 모든 공정이 완료된 후, 잔류 위상 반전층(12)의 CD를 측정하고 있으며, 이러한 측정 공정에 의해 패터닝된 위상 반전층(12)의 CD(CD2)가 정해진 위상 반전 패턴의 CD(CD1)와 일치하는지를 비교한다. The PSM measures the CD of the residual phase inversion layer 12 after all the processes are completed, and the CD (CD1) of the phase inversion pattern in which the CD (CD2) of the phase inversion layer 12 patterned by this measurement process is determined. ) To match.

그런데, 상기 도 1c와 같이, 제작된 위상 반전층(12)의 CD(CD2)가 이미 정해진 CD(CD1)와 차이룰 가질 수 있고, 이러한 CD 차이는 이후 반도체 기판상에서 패턴 결함을 유발할 수 있다. However, as shown in FIG. 1C, the manufactured CD (CD2) of the phase reversal layer 12 may have a difference from a predetermined CD (CD1), which may cause a pattern defect on a semiconductor substrate.

그러나, 현재 PSM은 공정이 완료된 후에 상기와 같이 CD를 측정하여 비교하고 있으므로, 이와 같은 CD 차이가 전체 또는 국부적으로 발생되는 경우 보정할 방법이 없이 무조건 폐기처분해야 하므로 제조 비용 및 제조 시간이 증대되는 문제점이 있다.However, since PSM currently measures and compares CDs as described above after the process is completed, if such CD differences occur in whole or locally, they must be disposed of unconditionally without correction, which increases manufacturing cost and manufacturing time. There is a problem.

본 발명은 PSM 제조 공정중에 위상 반전 패턴의 CD를 보정할 수 있는 위상 반전 마스크의 CD 보정방법을 제공하는 것이다. The present invention provides a CD correction method of a phase inversion mask that can correct CD of a phase inversion pattern during a PSM manufacturing process.

상기한 본 발명의 목적을 달성하기 위하여, 본 발명은, 노광광에 대해 투명한 기판 상에 위상 반전층, 차광층 및 레지스트 패턴을 형성하는 단계, 상기 레지스트 패턴의 형태로 차광층을 식각하여 차광 패턴을 형성하고, 상기 레지스트 패턴을 제거하는 단계, 상기 차광 패턴의 CD를 측정하는 단계, 상기 차광 패턴들 중 정해진 CD와 차이를 갖는 차광 패턴의 CD를 선택적으로 보정하는 단계, 상기 보정된 차광 패턴의 형태로 상기 위상 반전층을 패터닝하여, 위상 반전 패턴을 형성하는 단계, 및 상기 차광 패턴을 제거하는 단계를 포함한다.In order to achieve the above object of the present invention, the present invention, forming a phase inversion layer, light shielding layer and a resist pattern on a transparent substrate with respect to the exposure light, by etching the light shielding layer in the form of the resist pattern shading pattern Forming a pattern, removing the resist pattern, measuring a CD of the light shielding pattern, selectively correcting a CD of a light shielding pattern having a difference from a predetermined CD among the light shielding patterns, and Patterning the phase inversion layer to form a phase inversion pattern, and removing the light shielding pattern.

상기 차광 패턴의 CD를 보정하는 단계는, 상기 정해진 CD와 차이를 갖는 차광 패턴들이 노출되도록 레지스트 패턴을 형성하는 단계, 상기 노출된 차광 패턴들을 소정 폭만큼 식각하는 단계, 및 상기 레지스트 패턴을 제거하는 단계를 포함한다. Compensating the CD of the light shielding pattern may include forming a resist pattern to expose light shielding patterns having a difference from the predetermined CD, etching the exposed light shielding patterns by a predetermined width, and removing the resist pattern. Steps.

본 발명에 의하면, 위상 반전층을 패터닝하기 전에 위상 반전 패턴을 한정하기 위한 차광 패턴의 CD를 보정하므로써, 위상 반전 패턴의 CD 균일도를 향상시킬 수 있다. According to the present invention, the CD uniformity of the phase inversion pattern can be improved by correcting the CD of the light shielding pattern for defining the phase inversion pattern before patterning the phase inversion layer.

이하 첨부한 도면에 의거하여 본 발명의 바람직한 실시예를 설명하도록 한가다. Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

도 2a 내지 도 2d는 본 발명의 실시예에 따른 위상 반전 마스크의 CD 보정방 법을 설명하기 위한 각 공정별 단면도이다.2A to 2D are cross-sectional views of respective processes for explaining a CD correction method of a phase inversion mask according to an embodiment of the present invention.

도 2a를 참조하여, 노광광에 대해 투명한 기판, 예컨대, 석영 기판(100)을 준비한다. 상기 석영 기판(100) 상부에 위상 반전층(110), 차광층 및 레지스트막을 도포한다. 상기 위상 반전층(110)은 예컨대, MoSiN막이 이용될 수 있고, 차광층은 예컨대 입사광을 100% 차단할 수 있는 크롬층이 이용될 수 있다. 그후에, 전자빔 리소그라피 공정에 의해 레지스트막을 노광시킨다음, 노광된 레지스트막을 제거하여 레지스트 패턴(130)을 형성한다. 다음, 상기 레지스트 패턴(130)에 의해 차광층을 식각하여, 차광 패턴(120)을 형성한다. Referring to FIG. 2A, a transparent substrate, for example, a quartz substrate 100, is prepared for exposure light. The phase inversion layer 110, the light shielding layer, and a resist film are coated on the quartz substrate 100. For example, a MoSiN film may be used as the phase inversion layer 110, and a chromium layer may be used as the light blocking layer to block 100% of incident light. Thereafter, the resist film is exposed by an electron beam lithography process, and then the exposed resist film is removed to form a resist pattern 130. Next, the light blocking layer is etched by the resist pattern 130 to form the light blocking pattern 120.

다음, 도 2b를 참조하면, 상기 레지스트 패턴(130)을 공지의 방식으로 제거한다. 그리고 나서, 잔류하는 차광 패턴(120)의 CD를 측정한다. 차광 패턴(120)은 이후 위상 반전 패턴의 CD를 결정하는 층으로서, 상기 차광 패턴(120)의 CD를 측정하면 위상 반전 패턴의 CD를 예측할 수 있다. 여기서, 미설명 부호 120a는 정해진 차광 패턴의 CD(CD1)와 측정된 차광 패턴의 CD(CD2)가 일치하지 않는 차광 패턴을 나타낸다. 즉, 차광 패턴(120)들은 전체적으로 정해진 CD보다 작게 또는 크게 형성될 수도 있고, 상기 도 2b와 같이 부분적으로 정해진 CD 보다 크게 형성될 수도 있다. Next, referring to FIG. 2B, the resist pattern 130 is removed in a known manner. Then, the CD of the remaining light shielding pattern 120 is measured. The light shielding pattern 120 is a layer for determining the CD of the phase reversal pattern. When the CD of the light shielding pattern 120 is measured, the CD of the phase reversal pattern can be predicted. Here, reference numeral 120a denotes a light shielding pattern in which the CD (CD1) of the predetermined light shielding pattern and the measured CD (CD2) of the measured light shielding pattern do not coincide. That is, the light blocking patterns 120 may be formed to be smaller or larger than a predetermined CD as a whole, or may be formed larger than a partially determined CD as shown in FIG. 2B.

CD를 보정하기 위하여, 석영 기판(100) 결과물 상부에 레지스트막을 형성하고 노광 및 현상하여, 상기 상대적으로 큰 CD를 갖도록 형성된 차광 패턴들(120a)이 노출되도록 도 2c와 같이 레지스트 패턴(150)을 형성한다. 그후, 노출된 차광 패턴들(120a)을 소정 폭, 즉 정해진 CD와 측정된 CD의 차이(ΔCD)만큼 식각하여 차 광 패턴의 CD를 보정한다. 여기서, 도면 부호 120b는 보정된 차광 패턴을 나타내며, 상기 차광 패턴의 ΔCD는 도 3에 도시된 바와 같이 차광 패턴의 식각 시간에 비례한다. In order to correct the CD, a resist film is formed on the quartz substrate 100 and exposed and developed to expose the light blocking patterns 120a formed to have the relatively large CD, so that the resist pattern 150 is exposed as shown in FIG. 2C. Form. Thereafter, the exposed light blocking patterns 120a are etched by a predetermined width, that is, a difference ΔCD between the predetermined CD and the measured CD to correct the CD of the light blocking pattern. Here, reference numeral 120b denotes a corrected light blocking pattern, and ΔCD of the light blocking pattern is proportional to an etching time of the light blocking pattern, as shown in FIG. 3.

상기와 같이 차광 패턴의 CD를 보정한다음, 보정된 차광 패턴(120b)의 형태로 위상 반전층(110)을 식각하여, 균일한 크기를 갖는 위상 반전 패턴(110a)을 형성한다. 그후 차광 패턴(120b)을 제거한다.After correcting the CD of the light shielding pattern as described above, the phase inversion layer 110 is etched in the form of the corrected light shielding pattern 120b to form a phase inversion pattern 110a having a uniform size. Thereafter, the light shielding pattern 120b is removed.

도 4는 본 발명의 실시예에 따라 형성된 위상 반전 패턴의 CD 균일도를 나타낸 그래프로서, 차광 패턴의 CD 보정을 진행함으로써 위상 반전 패턴의 CD 균일도를 개선할 수 있으며, 상기 위상 반전 패턴의 CD 균일도는 차광층의 식각 시간에 큰 영향이 없음을 알 수 있다. FIG. 4 is a graph illustrating CD uniformity of a phase inversion pattern formed according to an embodiment of the present invention. The CD uniformity of the phase inversion pattern may be improved by performing CD correction of a light shielding pattern. It can be seen that there is no significant effect on the etching time of the light shielding layer.

이상에서 자세히 설명한 바와같이, 본 발명에 의하면, 위상 반전층을 패터닝하기 전에 위상 반전 패턴을 한정하기 위한 차광 패턴의 CD를 보정하므로써, 위상 반전 패턴의 CD 균일도를 향상시킬 수 있다.As described in detail above, according to the present invention, the CD uniformity of the phase inversion pattern can be improved by correcting the CD of the light shielding pattern for defining the phase inversion pattern before patterning the phase inversion layer.

이에따라, PSM 제조 공정중 CD를 보정할 수 있으므로, 마스크의 폐기 처분률을 줄일 수 있으며 제조 공정 비용도 절감할 수 있다. Accordingly, the CD can be corrected during the PSM manufacturing process, thereby reducing the mask disposal rate and the manufacturing process cost.

이상 본 발명을 바람직한 실시예를 들어 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 사상의 범위 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 여러가지 변형이 가능하다.Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. .

Claims (2)

노광광에 대해 투명한 기판 상에 위상 반전층, 차광층 및 레지스트 패턴을 형성하는 단계;Forming a phase inversion layer, light shielding layer, and resist pattern on a substrate transparent to exposure light; 상기 레지스트 패턴의 형태로 차광층을 식각하여 차광 패턴을 형성하고, 상기 레지스트 패턴을 제거하는 단계;Etching the light blocking layer in the form of the resist pattern to form a light blocking pattern, and removing the resist pattern; 상기 차광 패턴의 CD를 측정하는 단계;Measuring a CD of the light shielding pattern; 상기 차광 패턴들 중 정해진 CD와 차이를 갖는 차광 패턴의 CD를 선택적으로 보정하는 단계;Selectively correcting a CD of the light shielding pattern having a difference from a predetermined CD among the light shielding patterns; 상기 보정된 차광 패턴의 형태로 상기 위상 반전층을 패터닝하여, 위상 반전 패턴을 형성하는 단계; 및Patterning the phase reversal layer in the form of the corrected light shielding pattern to form a phase reversal pattern; And 상기 차광 패턴을 제거하는 단계를 포함하는 위상 반전 마스크의 CD 보정 방법.And removing the light shielding pattern. 제 1 항에 있어서, The method of claim 1, 상기 차광 패턴의 CD를 보정하는 단계는,Compensating the CD of the light shielding pattern, 상기 정해진 CD와 차이를 갖는 차광 패턴들이 노출되도록 레지스트 패턴을 형성하는 단계; Forming a resist pattern to expose light blocking patterns different from the predetermined CD; 상기 노출된 차광 패턴들을 소정 폭만큼 식각하는 단계; 및Etching the exposed light blocking patterns by a predetermined width; And 상기 레지스트 패턴을 제거하는 단계를 포함하는 위상 반전 마스크의 CD 보 정 방법. And removing the resist pattern.
KR1020050130999A 2005-12-27 2005-12-27 Method of correcting critical dimesion of a phase shift mask KR20070068910A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854464B1 (en) * 2007-07-19 2008-08-27 주식회사 하이닉스반도체 Method for fabricating phase shift mask having size-corrected pattern
US7629093B2 (en) 2008-03-05 2009-12-08 Hynix Semiconductor Inc. Method for correcting critical dimension of mask pattern
KR100968149B1 (en) * 2007-10-31 2010-07-06 주식회사 하이닉스반도체 binary mask and method for fabricating the same, Method for fabricating fine pattern in semicondutor device using binary mask
KR100972860B1 (en) * 2007-09-18 2010-07-28 주식회사 하이닉스반도체 Method for fabricating in photo mask
US7914951B2 (en) 2007-09-18 2011-03-29 Hynix Semiconductor Inc. Method of correcting pattern critical dimension of photomask
US8455159B2 (en) 2010-09-13 2013-06-04 SK Hynix Inc. Method for correcting critical dimension of phase shift mask and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854464B1 (en) * 2007-07-19 2008-08-27 주식회사 하이닉스반도체 Method for fabricating phase shift mask having size-corrected pattern
KR100972860B1 (en) * 2007-09-18 2010-07-28 주식회사 하이닉스반도체 Method for fabricating in photo mask
US7901844B2 (en) 2007-09-18 2011-03-08 Hynix Semiconductor Inc. Method with correction of hard mask pattern critical dimension for fabricating photomask
US7914951B2 (en) 2007-09-18 2011-03-29 Hynix Semiconductor Inc. Method of correcting pattern critical dimension of photomask
KR100968149B1 (en) * 2007-10-31 2010-07-06 주식회사 하이닉스반도체 binary mask and method for fabricating the same, Method for fabricating fine pattern in semicondutor device using binary mask
US7939226B2 (en) 2007-10-31 2011-05-10 Hynix Semiconductor Inc. Binary mask, method for fabricating the binary mask, and method for fabricating fine pattern of semiconductor device using binary mask
US7629093B2 (en) 2008-03-05 2009-12-08 Hynix Semiconductor Inc. Method for correcting critical dimension of mask pattern
US8455159B2 (en) 2010-09-13 2013-06-04 SK Hynix Inc. Method for correcting critical dimension of phase shift mask and method for manufacturing the same

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