CN117253937A - Photodiode structure for photoelectric signal detection of optical fiber radio - Google Patents
Photodiode structure for photoelectric signal detection of optical fiber radio Download PDFInfo
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- CN117253937A CN117253937A CN202311280364.5A CN202311280364A CN117253937A CN 117253937 A CN117253937 A CN 117253937A CN 202311280364 A CN202311280364 A CN 202311280364A CN 117253937 A CN117253937 A CN 117253937A
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- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 239000013307 optical fiber Substances 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000031700 light absorption Effects 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims 8
- 230000005684 electric field Effects 0.000 abstract description 25
- 108091006149 Electron carriers Proteins 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photodiode structure for photoelectric signal detection of optical fiber radio, comprising: a substrate, a mesa structure, and a light absorbing region. And forming a mesa structure on the substrate, and based on the mesa structure, continuing to selectively epitaxially grow a photosensitive absorption region, so that a local strong electric field is formed at the top and bottom corner positions of the mesa structure, and therefore, when the high-power light irradiates, the local strong electric field can counteract the influence of a part of built-in electric field of the photodiode, further, the drift rate of electron carriers is improved, and the work cut-off frequency and the maximum photocurrent processing capacity of the photodiode are improved.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a photodiode structure for photoelectric signal detection of optical fiber radio.
Background
For the traditional photodiode structure, when the incident light power is larger, a large number of photo-generated carriers are formed in the photodiode absorption area, and the electron carriers and the hole carriers are driven by the built-in electric field and the bias electric field to respectively lead out metal drift and diffusion to the two poles of the photodiode.
The built-in electric field can be changed by the electron carriers and the hole carriers in the drifting and diffusing process, so that the electric field distribution generated in the photodiode absorption area by offset voltage is reduced or even offset, the drifting and diffusing time of the electron carriers are increased, the work cut-off frequency and the maximum photocurrent processing capacity of the photodiode are deteriorated, and therefore, the traditional photodiode structure is not suitable for detecting high-frequency high-power photoelectric signals of optical fiber radio.
Disclosure of Invention
In order to solve the technical problems, the invention provides a photodiode structure for photoelectric signal detection of optical fiber radio. The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
The invention adopts the following technical scheme:
the invention provides a photodiode structure for photoelectric signal detection of optical fiber radio, comprising: a substrate, a mesa structure, and a light absorbing region;
the mesa structure consists of upright posts which are positioned on the substrate and are uniformly distributed, and the light absorption area is epitaxially grown on the substrate and is coated outside the mesa structure;
the doping concentration and the doping type of the mesa structure are consistent with those of the substrate, and the light absorption region is an undoped region or a doped region with the opposite doping type to that of the mesa structure; the thickness of the light absorption region ranges from 0.2 um to 1.0um, and the height h of the mesa structure 1 Height h from the light absorbing region 2 The method meets the following conditions:
h 1 ≤2h 2 /3。
further, the mesa structure is opposite in charge type and uniform in charge amount to the light absorbing region.
The upright posts are of columnar structures with square sections, are uniformly spaced and are arranged on the substrate in a matrix mode.
The stand columns are in a cuboid shape, and the stand columns are uniformly spaced and longitudinally arranged, so that the stand columns are arranged in a row to form the table-board structure.
The stand columns are in a cuboid shape, and the stand columns are uniformly spaced and transversely arranged, so that the stand columns are arranged in a row to form the table-board structure.
Further, the photodiode structure for optical-electrical signal detection of the optical fiber radio further includes: a first heavily doped region and a second heavily doped region; the first heavily doped region is a region formed by heavily doping the top of the light absorption region, and the doping concentration of the first heavily doped region is greater than that of the light absorption region; the second heavily doped region is a region formed by heavily doping the substrate, and the doping concentration of the second heavily doped region is greater than that of the substrate and is consistent with the doping type of the substrate.
Further, the photodiode structure for optical-electrical signal detection of the optical fiber radio further includes: the first electrode lead-out metal is connected with the first heavily doped region, and the second electrode lead-out metal is connected with the second heavily doped region.
Further, the height h of the mesa structure 1 Height h from the light absorbing region 2 The method meets the following conditions:
h 1 ＝h 2 /2。
further, silicon is used as the substrate; germanium or gallium nitride is used as the light absorbing region.
The invention has the beneficial effects that: forming a mesa structure on a substrate, continuing to selectively epitaxially grow a photosensitive absorption region based on the mesa structure, and designing the doping concentration, doping type and height of the substrate, the mesa structure and the light absorption region so as to form local strong electric fields at the top and bottom corner positions of the mesa structure, thereby canceling the influence of a part of built-in electric field of the photodiode when the light of higher power is irradiated, further improving the drift rate of electron carriers, and improving the work cut-off frequency and the maximum photocurrent processing capability of the photodiode.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic top view of a photodiode structure of the present invention;
FIG. 2 is a schematic cross-sectional view of a photodiode structure of the present invention in one embodiment;
FIG. 3 is a schematic cross-sectional view of a photodiode structure according to another embodiment of the present invention;
FIG. 4 is a schematic view of a first arrangement of the mesa structure of the present invention;
FIG. 5 is a schematic view of a second arrangement of the mesa structure of the present invention;
fig. 6 is a schematic view of a third arrangement of the mesa structure of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1-3, in some illustrative embodiments, the present invention provides a photodiode structure for optical-to-electrical signal detection for fiber-optic radios, comprising: a substrate 102, a light absorbing region 103, a first electrode lead-out metal 104, a second electrode lead-out metal 105, a second heavily doped region 106, a mesa structure 107, a first heavily doped region 109.
The photodiode structure in this embodiment is a single diode chip in the limit.
Mesa structure 107 is located on substrate 102. The light absorbing region 103 is epitaxially grown on the substrate 102, specifically, selective epitaxial growth is performed on the substrate 102 based on the mesa structure 107 to form a photosensitive light absorbing region 103, and the light absorbing region 103 after the growth is coated outside the mesa structure 107. Wherein the mesa structure 107 is comprised of uniformly distributed pillars 108, and each pillar 108 is located on the substrate 102.
The structural shape of the posts 108 and the manner in which the posts 108 are uniformly distributed will be described as follows:
as shown in fig. 4, the pillar 108 has a columnar structure, and the columnar structure has a square cross section. The pillars 108 are uniformly spaced and arranged on the substrate 102 in a matrix, where uniform spacing means that the spacing between any one pillar and other pillars adjacent to the pillar is the same, so that the pillars 108 are uniformly distributed on the substrate 102 in a matrix.
As shown in fig. 5, the pillars 108 are rectangular parallelepiped, and the pillars 108 are uniformly spaced and longitudinally arranged, where the spacing between any two adjacent pillars 108 is the same, and longitudinally arranged refers to the pillars 108 being arranged to extend in the longitudinal direction of the substrate 102, so that the pillars 108 are finally arranged in a row to form the mesa structure 107.
As shown in fig. 6, the pillars 108 are rectangular parallelepiped, and the pillars 108 are uniformly spaced and laterally arranged, where the spacing between any two adjacent pillars 108 is the same, and laterally arranged refers to the pillars 108 being arranged to extend in the lateral direction of the substrate 102, so that the pillars 108 are finally arranged in a row to form the mesa structure 107.
Mesa 107 is doped to a concentration and type consistent with that of substrate 102, and light absorbing region 103 is an undoped region or a doped region of opposite doping type to mesa 107. The first heavily doped region 109 is a region formed by heavily doping the top of the absorption region 103, where heavily doped refers to that the doping concentration of the first heavily doped region 109 is greater than the doping concentration of the light absorption region 103 compared to the light absorption region 103, and when the light absorption region 103 is a lightly doped region, the doping types of the first heavily doped region 109 and the light absorption region 103 are consistent. The second heavily doped region 106 is a region formed by heavily doping the substrate 102, where heavily doped refers to a region having a doping concentration of the second heavily doped region 106 that is greater than the doping concentration of the substrate 102 and is consistent with the doping type of the substrate 102. The first electrode lead-out metal 104 is connected to the first heavily doped region 109, and the second electrode lead-out metal 105 is connected to the second heavily doped region 106.
The thickness of the light absorbing region 103 ranges from 0.2 to 1.0um, and the height of the mesa 107 generally does not exceed 2/3 of the thickness of the light absorbing region 103, i.e., the height h of the mesa 107 1 Height h with light absorbing region 103 2 The method meets the following conditions: h is a 1 ≤2h 2 /3. Preferably, the height h of mesa structure 107 1 Height h with light absorbing region 103 2 The method meets the following conditions: h is a 1 ＝h 2 2, i.e. the optimum design height value of mesa 107 is 1/2 of the height of light absorbing region 103, may be design optimized according to the actual structural parameters of the device.
As shown in fig. 2, the mesa structure 107 may be formed by directly performing photolithography on the substrate 102, that is, after the substrate 102 is subjected to photolithography, the mesa structure 107 with uniform spacing is formed, and the doping concentration of the mesa structure 107 with uniform spacing is consistent with that of the substrate 102, which may be N-type doping, and the doping concentration ranges from 1×10 17 ～1×10 20 /cm 3 。
After mesa structure 107 is formed, substrate 102 is ion implanted and annealed to form N-type second heavily doped region 106 having a depth of 0.05-0.3 μm and a doping concentration in the range of 1×10 19 ～1×10 21 /cm 3 。
Then, the light-sensitive light-absorbing region 103 is selectively grown epitaxially, and during this process, undoped or low-doped light-absorbing regions 103 are grown simultaneously on the sidewalls of the pillars 108 and the bottoms of the trenches formed between adjacent pillars 108, and the thickness of the light-absorbing regions 103 is in the range of 0.2 to 1.0 μm.
After the growth of the light absorbing region 103 is completed, a first heavily doped region 109 is formed on top of the mesa of the light absorbing region 103 by an ion implantation and annealing process.
Finally, after the passivation layer is grown and the electrode contact hole is etched, a metal layer is grown, so that a first electrode lead-out metal 104 and a second electrode lead-out metal 105 are formed, and later metal interconnection is facilitated.
In the photodiode structure shown in fig. 2, when the incident optical power is large, a large amount of photo-generated carriers are formed in the light absorbing region 103, and the electron carriers and the hole carriers drift and diffuse toward the second electrode lead-out metal 105 and the first electrode lead-out metal 104, respectively, under the driving of the built-in electric field and the bias electric field. The electron carriers and hole carriers change the built-in electric field during the process of drifting and diffusion, reduce or even offset the electric field distribution generated by the bias voltage in the light absorption region 103, and in this embodiment, the mesa structure 107 is formed by etching on the substrate 102, and the light-sensitive light absorption region 103 is continuously selectively epitaxially grown based on the substrate structure. In this way, a local strong electric field is formed at the top position 1081 and the bottom corner position 1082 of the pillar 108, so that when high power illumination is performed, the local strong electric field can offset the influence of the built-in electric field of part of the photodiode, thereby increasing the drift rate of electron carriers and improving the work cut-off frequency and the maximum photocurrent processing capability of the photodiode.
As shown in fig. 3, the mesa structure 107 may be formed by epitaxially growing monocrystalline silicon on top of the substrate 102, and then performing photolithography etching to form the mesa structure 107, i.e. the substrate 102 is formed by epitaxially growing monocrystalline silicon on top of the substrate 102, and performing photolithography etching to form the mesa structure 107 with uniform spacing, wherein the doping type of the uniformly-spaced mesa structure 107 is consistent with that of the substrate 102, i.e. N-type doping, and the doping concentration ranges from 1×10 16 ～1×10 18 /cm 3 。
After mesa structure 107 is formed, substrate 102 is ion implanted and annealed to form N-type second heavily doped region 106 having a depth of 0.05-0.3 μm and a doping concentration in the range of 1×10 19 ～1×10 21 /cm 3 。
Then, the light-sensitive light-absorbing region 103 is selectively epitaxially grown, and during this process, undoped or low-doped light-absorbing region 103 is grown simultaneously on the sidewall of the pillar 108 and the bottom of the trench formed between the adjacent pillars 108, lightThe doping type of the absorption region 103 may be P-type, and the doping concentration range is 1×10 15 ～1×10 18 /cm 3 . Here, it may be specifically designed such that the mesa structure 107 is opposite in charge type to the light absorbing region 103 and uniform in charge amount. The thickness of the light absorbing region 103 ranges from 0.2 to 1.0 microns,
after the growth of the light absorbing region 103 is completed, a first heavily doped region 109 is formed on top of the mesa of the light absorbing region 103 by an ion implantation and annealing process.
Finally, after the passivation layer is grown and the electrode contact hole is etched, a metal layer is grown, so that a first electrode lead-out metal 104 and a second electrode lead-out metal 105 are formed, and later metal interconnection is facilitated.
The photodiode structure shown in fig. 3 forms a large amount of photo-generated carriers in the light absorption region 103 when the incident light power is large, and the electron carriers and the hole carriers drift and diffuse toward the second electrode lead-out metal 105 and the first electrode lead-out metal 104, respectively, under the driving of the built-in electric field and the bias electric field. The electron carriers and hole carriers change the built-in electric field during the drift and diffusion process, and reduce or even cancel the electric field distribution generated by the bias voltage inside the light absorbing region 103, and in this embodiment, the electric charge types of the mesa structure 107 and the light absorbing region 103 are opposite, and the electric charge amounts are uniform. Under the reverse bias condition of the photodiode, the space charge region is uniformly spread in the mesa structure 107 and the light absorption region 103, and because the mesa structure 107 is spatially spread in the plane direction, the space charge is completely depleted by the lower bias voltage, which is beneficial to drift and collection of photo-generated electron carriers. Due to the synchronous doping inside the photosensitive light absorbing region 103, the series resistance of the photodiode can be significantly reduced, thereby improving the operational cut-off frequency of the photodiode. In addition, a local strong electric field is formed at the top position 1081 and the bottom corner position 1082 of the pillar 108, so that when high power illumination is performed, the local strong electric field can offset the influence of the built-in electric field of part of the photodiode, thereby increasing the drift rate of electron carriers and improving the work cut-off frequency and the maximum photocurrent processing capability of the photodiode.
In this embodiment, the P-type doping and the N-type doping in the photodiode structure may be interchanged.
In this embodiment, the light injection mode of the photodiode structure may be the irradiation mode of the side waveguide light input, or may be the irradiation mode of the top surface or the back surface of the device, and the photodiodes shown in fig. 2 and 3 are mainly the irradiation mode of the side waveguide light input, and specifically may be specifically designed according to the requirement of the anti-reflection layer of the light incident surface, the metal electrode layout mode, and the like.
The photodiode structure in this embodiment may be a germanium/silicon heterojunction photodiode for detecting short-wave infrared light signals, where silicon is used as the substrate 102 and germanium is used as the light absorption region 103.
The photodiode structure in this embodiment may be a gallium nitride/silicon heterojunction photodiode for detecting ultraviolet light signals, and in this case, silicon is used as the substrate 102 and gallium nitride is used as the light absorption region 103.
In the photodiode structure of the present embodiment, the mesa structure 107 is fabricated on the substrate 102, and the structure design of the mesa structure 107 enables a spaced doped region to exist on the substrate 102, and the purpose of the spaced doped region is to increase the electric field value in the light absorption region 103, so that the space charge effect in the light absorption region 103 can be effectively improved when the high-power light source irradiates, and the processing capability of high-power illumination of the decoupling strands of the photodiode can be improved. Meanwhile, the spaced doped regions and the light absorption region 103 can form a super junction structure, so that charge balance is formed between the doped regions and the light absorption region 103, the electric field in the light absorption region 103 is improved, the characteristic on-resistance of the photodiode is reduced, and the RC cut-off frequency of the photodiode structure is improved.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (9)
1. A photodiode structure for optical-to-electrical signal detection of a fiber-optic radio, comprising: a substrate, a mesa structure, and a light absorbing region;
the mesa structure consists of upright posts which are positioned on the substrate and are uniformly distributed, and the light absorption area is epitaxially grown on the substrate and is coated outside the mesa structure;
the doping concentration and the doping type of the mesa structure are consistent with those of the substrate, and the light absorption region is an undoped region or a doped region with the opposite doping type to that of the mesa structure; the thickness of the light absorption region ranges from 0.2 um to 1.0um, and the height h of the mesa structure 1 Height h from the light absorbing region 2 The method meets the following conditions:
h 1 ≤2h 2 /3。
2. a photodiode structure for optical signal detection of a fiber optic radio according to claim 1, wherein the mesa structure is of opposite charge type and of uniform charge amount to the light absorbing region.
3. A photodiode structure for optical signal detection of fiber radio according to claim 1, wherein the pillars are of a square-section columnar structure, and the pillars are uniformly spaced and arranged in a matrix on the substrate.
4. A photodiode structure for optical signal detection of fiber optic radios according to claim 1, wherein the pillars are rectangular parallelepiped in shape and each of the pillars is uniformly spaced and longitudinally arranged such that each of the pillars is arranged in a row to constitute the mesa structure.
5. A photodiode structure for optical signal detection of fiber optic radios according to claim 1, wherein the pillars are rectangular parallelepiped in shape and each of the pillars is uniformly spaced and laterally arranged such that each of the pillars is arranged in a column to constitute the mesa structure.
6. A photodiode structure for optical signal detection of a fiber optic radio as claimed in any of claims 1-5, further comprising: a first heavily doped region and a second heavily doped region;
the first heavily doped region is a region formed by heavily doping the top of the light absorption region, and the doping concentration of the first heavily doped region is greater than that of the light absorption region;
the second heavily doped region is a region formed by heavily doping the substrate, and the doping concentration of the second heavily doped region is greater than that of the substrate and is consistent with the doping type of the substrate.
7. A photodiode structure for optical signal detection of a fiber optic radio as claimed in claim 6, further comprising: the first electrode lead-out metal is connected with the first heavily doped region, and the second electrode lead-out metal is connected with the second heavily doped region.
8. A photodiode structure for optical signal detection in a fiber optic radio as claimed in claim 7, wherein the mesa has a height h 1 Height h from the light absorbing region 2 The method meets the following conditions:
h 1 ＝h 2 /2。
9. a photodiode structure for optical signal detection of fiber optic radios according to claim 8, characterized in that silicon is used as the substrate; germanium or gallium nitride is used as the light absorbing region.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311280364.5A CN117253937A (en) | 2023-10-07 | 2023-10-07 | Photodiode structure for photoelectric signal detection of optical fiber radio |
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| CN202311280364.5A CN117253937A (en) | 2023-10-07 | 2023-10-07 | Photodiode structure for photoelectric signal detection of optical fiber radio |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100133639A1 (en) * | 2007-05-25 | 2010-06-03 | Kevin Fuechsel | Photosensitive Semiconductor Component |
| US20140319641A1 (en) * | 2013-04-24 | 2014-10-30 | Infineon Technologies Austria Ag | Radiation Conversion Device and Method of Manufacturing a Radiation Conversion Device |
| CN106847958A (en) * | 2016-12-07 | 2017-06-13 | 同方威视技术股份有限公司 | Photodiode device and photodiode detector |
| CN206672951U (en) * | 2016-12-27 | 2017-11-24 | 北京世纪金光半导体有限公司 | A kind of SiC avalanche photodides |
| WO2019148510A1 (en) * | 2018-02-01 | 2019-08-08 | 北京一径科技有限公司 | Novel heterojunction avalanche photodiode |
| CN115132872A (en) * | 2022-07-21 | 2022-09-30 | 杭州海康威视数字技术股份有限公司 | Photodiode device, photodetector and detection device |
-
2023
- 2023-10-07 CN CN202311280364.5A patent/CN117253937A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100133639A1 (en) * | 2007-05-25 | 2010-06-03 | Kevin Fuechsel | Photosensitive Semiconductor Component |
| US20140319641A1 (en) * | 2013-04-24 | 2014-10-30 | Infineon Technologies Austria Ag | Radiation Conversion Device and Method of Manufacturing a Radiation Conversion Device |
| CN106847958A (en) * | 2016-12-07 | 2017-06-13 | 同方威视技术股份有限公司 | Photodiode device and photodiode detector |
| CN206672951U (en) * | 2016-12-27 | 2017-11-24 | 北京世纪金光半导体有限公司 | A kind of SiC avalanche photodides |
| WO2019148510A1 (en) * | 2018-02-01 | 2019-08-08 | 北京一径科技有限公司 | Novel heterojunction avalanche photodiode |
| CN115132872A (en) * | 2022-07-21 | 2022-09-30 | 杭州海康威视数字技术股份有限公司 | Photodiode device, photodetector and detection device |
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