CN206672951U - A kind of SiC avalanche photodides - Google Patents
A kind of SiC avalanche photodides Download PDFInfo
- Publication number
- CN206672951U CN206672951U CN201621445212.1U CN201621445212U CN206672951U CN 206672951 U CN206672951 U CN 206672951U CN 201621445212 U CN201621445212 U CN 201621445212U CN 206672951 U CN206672951 U CN 206672951U
- Authority
- CN
- China
- Prior art keywords
- table top
- plane
- sic
- utility
- sic avalanche
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 21
- 238000002360 preparation method Methods 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 description 19
- 230000003647 oxidation Effects 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 13
- 238000000137 annealing Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Abstract
The utility model discloses a kind of SiC avalanche photodides, the junction termination structures of the SiC avalanche photodides are the table top of non-linear incline；Angle between the inclined-plane and substrate plane of the table top is gradually increased by bottom to the top of table top；Angle between the inclined-plane and substrate plane is 30 60 ° in the bottom of table top, is 60 90 ° at the top of table top；The invention also discloses the preparation method of SiC avalanche photodides of the present utility model.SiC avalanche photodides of the present utility model form the table top of non-linear incline using multiple etching, and the surface quality and pattern on inclined-plane are improved by the optimization of technique, it can effectively avoid the generation of low avalanche capability phenomenon caused by being leaked electricity at mesa top and inclined-plane.
Description
Technical field
It the utility model is related to a kind of SiC avalanche photodides.
Background technology
SiC is a kind of wide-band gap material, and energy gap is more than 3eV, corresponding to ultraviolet spectra.SiC avalanche photodides
Because low-dark current, high avalanche effect, there is very high current gain, can be used to detect single photon.Therefore, SiC
Avalanche photodide is a kind of extraordinary single photon ultraviolet light detector.Meanwhile APD diodes add the situation that low pressure biases
Under, it is a kind of extraordinary ultraviolet photodiode.The detection wave-length coverage of SiC avalanche optoelectronics be 280nm near, it is blind in day
Area, there is very important application value in the many-side such as civilian, military.
At present, SiC avalanche photodides are typically all mesa structure, as shown in figure 1, it includes n+ substrates 1, p+ or n+
Layer 2, n- or p- layers 3, n++ or p++ layers 4, anti-reflecting layer 5, passivation layer 6, Ohmic contact 7 and electrode 8；It utilizes linear tilt
Table top as junction termination structures, it is simple in construction；The knot terminal of positive bevel can effectively reduce device edge (such as A in Fig. 1
Place) electric field concentration phenomenon, obtain very low dark current and very high avalanche current.But there is also some to ask for this structure
Topic, the defects of causing mesa side walls due to etching, are more, and mesa top, the electric field of bottom easily concentrate, and tends to make
Into breakdown and the small phenomenon of avalanche capability in advance caused by electric leakage caused by mesa side walls and top, bottom, the electric current of device is influenceed
Gain and detection efficient.
Utility model content
For problems of the prior art, the purpose of this utility model is to provide a kind of pole of SiC avalanche optoelectronics two
Pipe, which employs the inclined-plane of non-linear incline, and the surface quality and pattern on inclined-plane are improved by the optimization of technique, finally kept away
The generation of low avalanche capability phenomenon caused by being leaked electricity at mesa top and inclined-plane is exempted from.Another object of the present utility model is to carry
For a kind of method for preparing SiC avalanche photodides in the utility model.
To achieve the above object, the utility model uses following technical scheme：
A kind of SiC avalanche photodides, the junction termination structures of the SiC avalanche photodides are non-linear incline
Table top；Angle between the inclined-plane and substrate plane of the table top is gradually increased by bottom to the top of table top；The inclined-plane
Angle between substrate plane is 30-60 ° in the bottom of table top, is 60-90 ° at the top of table top.
Further, the SiC avalanche photodides use epitaxial structure pn diodes, the epitaxial structure be n++/
N-/p+/buffer/n+sub or p++/p-/n+/buffer/n+sub；N+sub refers to the undermost SiC substrate of material.
Further, the depth of the table top is to etch away whole n- or p- drift layers, and over etching enters p+ or n+ layers.
Further, when the epitaxial structure is n++/n-/p+/buffer/n+sub, n++ layer doping concentrations are
1E19cm-3-1E20cm-3, thickness 100-300nm；N- layers doping concentration is 3E15-3E16cm-3, thickness 1000nm；P+ layers
Doping concentration is 5E18-5E19cm-3, thickness 300-500nm；Buffer layers doping concentration can be 1E18cm-3, thickness is
1000nm。
A kind of method for preparing SiC avalanche photodides, methods described comprise the following steps：
1) medium mask is deposited on the epitaxial structure of SiC avalanche photodides；Then to medium mask carry out photoetching,
Etching, obtain the mask layer with certain inclination angle；
2) performed etching using ICP methods, first performed etching using selection than relatively low condition, obtain the inclined-plane of table top with
Less angle between substrate plane；Then process conditions, increase selection ratio, until completing the etching of table top are gradually changed；
3) the high temperature anneal is carried out to the table top that etching is completed in step 2), with carbon film to material surface before high annealing
Protected；
4) with oxygen or nitrogen gas plasma removal step 3) in carbon film layer, sacrifice oxidation is then carried out again, after oxidation
With the damaging layer of HF or BOE erosion removal mesa surfaces；
5) table top is passivated using the method for thermal oxide, afterwards in NO or N2Annealed in O atmosphere；
6) the thick passivation layer of deposit is passivated protection, removes mesa top electrode window through ray, incidence window and bottom electrode
The medium of window, then deposit anti-reflecting layer medium；
7) deposit metal ohmic contact respectively at the electrode window through ray of mesa top and bottom, and carry out annealing and form ohm
Contact；Done after the completion of Ohmic contact on window and interconnect metal.
Further, the depth of table top needs to etch away whole n- or p- drift layers in step 2), over etching enter p+ or
N+ layers.
Further, the change number of ratio is selected described in step 2) not less than twice.
Further, the temperature of step 3) high temperature annealing is more than 1700 DEG C, time 3min-30min；It is sacrificial in step 4)
For the oxide thickness of domestic animal oxidation between 10-50nm, the mode of oxidation can be dry-oxygen oxidation or wet-oxygen oxidation.
Further, the oxidizing temperature of thermal oxide is between 1200 DEG C -1500 DEG C in step 5), using dry-oxygen oxidation.
The utility model has following advantageous effects：
The pole of SiC avalanche optoelectronics two of the present utility model employs the inclined-plane of non-linear incline, and is changed by the optimization of technique
It has been apt to the surface quality and pattern on inclined-plane, has finally avoid low avalanche capability phenomenon caused by being leaked electricity at mesa top and inclined-plane
Occur.
Brief description of the drawings
Fig. 1 is the structural representation of SiC avalanche photodiode structures in the prior art；
Fig. 2 is the structural representation of SiC avalanche photodiode structures of the present utility model；
Fig. 3 is the structural representation of the epitaxial structure of the SiC avalanche photodides of the utility model embodiment；
Fig. 4 is to obtain the structure after mask layer in the SiC avalanche photodide preparation process of the utility model embodiment
Schematic diagram；
Fig. 5 is to be etched in the SiC avalanche photodide preparation process of the utility model embodiment, after the high temperature anneal
Structural representation；
Fig. 6 is the structural representation after thermal oxide in the SiC avalanche photodide preparation process of the utility model embodiment
Figure；
Fig. 7 is the structural representation after being opened a window in the SiC avalanche photodide preparation process of the utility model embodiment；
Fig. 8 is the structural representation after the completion of prepared by the SiC avalanche photodides of the utility model embodiment.
Embodiment
Below, refer to the attached drawing, the utility model is more fully illustrated, shown shown in the drawings of of the present utility model
Example property embodiment.However, the utility model can be presented as a variety of multi-forms, it is not construed as being confined to what is described here
Exemplary embodiment.And these embodiments are to provide, so that the utility model is fully and completely, and will be of the present utility model
Scope is fully communicated to one of ordinary skill in the art.
As shown in Fig. 2 the utility model provides a kind of SiC avalanche photodides, the SiC avalanche photodides
Buffer layers 9 are provided between n+ substrates 1 and p+ or n+ layers 2；The junction termination structures of the SiC avalanche photodides are non-linear
Inclined table top；Angle between the inclined-plane and substrate plane of table top is gradually increased by bottom to the top of table top；Inclined-plane and lining
Angle between baseplane is 30-60 ° in the bottom of table top, is 60-90 ° at the top of table top.
SiC avalanche photodides use the pn diodes of epitaxial structure, epitaxial structure n++/n-/p+/buffer/n+
Sub or p++/p-/n+/buffer/n+sub；N+sub refers to the undermost SiC substrate of material.Conductivity type substrate typically is selected,
Quality is high, and expense is low.
The depth of table top is to etch away whole n- or p- drift layers, and over etching enters p+ or n+ layers.
When the epitaxial structure is n++/n-/p+/buffer/n+sub, n++ layers doping concentration is 1E19cm-3-
1E20cm-3, thickness 100-300nm；N- layers doping concentration is 3E15-3E16cm-3, thickness 1000nm；P+ layer doping concentrations
For 5E18-5E19cm-3, thickness 300-500nm；Buffer layers doping concentration can be 1E18cm-3, thickness 1000nm.Wherein
P+ layers concentration can be it is heterogeneous, such as can be higher than other regions in the regional concentration close to surface Ohmic contact, be beneficial to
Form more preferable Ohmic contact.
The utility model additionally provides a kind of method for preparing SiC avalanche photodides, and this method includes：
1) medium mask is deposited on the epitaxial structure of SiC avalanche photodides；Then to medium mask carry out photoetching,
Etching, obtain the mask layer with certain inclination angle；
2) performed etching using ICP methods, first performed etching using selection than relatively low condition, obtain the inclined-plane of table top with
Less angle between substrate plane；Then process conditions, increase selection ratio, until completing the etching of table top are gradually changed；
3) the high temperature anneal is carried out to the table top that etching is completed in step 2), with carbon film to material surface before high annealing
Protected；The high temperature anneal can make the coarse part of inclined-plane caused by etching or bottom smoothened, eliminate etching production
Raw various defects and surface it is coarse.
4) with oxygen or nitrogen gas plasma removal step 3) in carbon film layer, sacrifice oxidation is then carried out again, after oxidation
With the damaging layer of HF or BOE erosion removal mesa surfaces；
5) table top is passivated using the method for thermal oxide, annealed afterwards in NO or N2O atmosphere；Thermal oxide
Layer can be very good to be passivated surface protection, particularly to etching formed mesa side walls, reduce due to surface excessively
Leakage current caused by interface trap.
6) the thick passivation layer of deposit is passivated protection, removes mesa top electrode window through ray, incidence window and bottom electrode
The medium of window, then deposit anti-reflecting layer medium；In the anti-reflecting layer of the incident light window of mesa top, incidence can be utilized
Reflected light reduces the reflection of incident light in the interference cancellation phenomenon of dielectric surface, improves detection efficient.
7) deposit metal ohmic contact respectively at the electrode window through ray of mesa top and bottom, and carry out annealing and form ohm
Contact；Done after the completion of Ohmic contact on window and interconnect metal.The Ohmic contact deposited at the electrode window through ray of top and bottom
Metal can be that identical can also be different, and can once anneal can also be divided into twice annealing.
Wherein, the depth of table top needs to etch away whole n- or p- drift layers in step 2), and over etching enters p+ or n+
Layer.The change number of ratio is selected described in step 2) not less than twice.Selection ratio and the calculating between table top inclination angle in step 2)
Formula is：
Tan (β)=k*tan (α)
In formula：K is the speed and SiO of selection ratio, i.e. etching SiC2Speed ratio；α is the inclination angle of mask, and β is table top
Inclination angle；The value of the selection ratio is according to process conditions difference between 0.1-6.
The temperature of step 3) high temperature annealing is more than 1700 DEG C, time 3min-30min；Oxidation is sacrificed in step 4)
Oxide thickness between 10-50nm, the mode of oxidation can be dry-oxygen oxidation or wet-oxygen oxidation.The oxygen of thermal oxide in step 5)
Change temperature between 1200 DEG C -1500 DEG C, using dry-oxygen oxidation.
The method of the present utility model for preparing SiC avalanche photodides is described further with reference to embodiment：
N++/n-/p+/buffer/n+sub (substrate) epitaxial structure, other epitaxial structure tools are selected in the present embodiment
There is identical reason.
As shown in figure 3, the concentration of n++/n-/p+/buffer/n+sub epitaxial structures can be with thickness：The doping of n+ layers is dense
Spend for 5E19cm-3, thickness 150nm；N- layers doping concentration is 1E16cm-3, thickness 1000nm；P+ layer doping concentrations are
1E19cm-3, thickness 400nm；Buffer layers doping concentration can be 1E18cm-3, thickness 1000nm.
As shown in figure 4, deposit medium mask 10, medium mask 10 can be SiO2, thickness is about 1.5 μm.Medium is covered
Film carries out photoetching, etching, obtains the mask layer with certain inclination angle.
As shown in figure 5, using ICP method etching SiCs, first use selection is relatively low frequently, and (i.e. SiC etch rate is than SiO2's
Etch rate is smaller) condition perform etching, obtain smaller inclination angle, probably between 30 ° -60 °, then gradually change again
Become process conditions, higher condition is compared with selection, obtains the bigger table top in inclination angle.Pilot process can carry out 2 times and more than
Process conditions change.After the completion of mesa etch, to improve the coarse of various defects and surface caused by etching, including improve still
Henan changes the knuckle on surface caused by process conditions, carries out the high temperature anneal, material surface is entered with carbon film before high annealing
Row protection, the temperature of high annealing is more than 1700 DEG C, time about 10min.
As shown in fig. 6, after high annealing, carbon film layer is removed with oxygen or nitrogen gas plasma, then carries out sacrifice oxygen again
Change.For oxide thickness in about 20nm, mode is wet-oxygen oxidation, HF or BOE erosion removals are used after oxidation.Table can be removed by sacrificing oxidation
The damaging layer in face.Then thermal oxide is passivated.About 1350 DEG C of oxidizing temperature, using dry-oxygen oxidation, in NO or N after oxidation2O gas
Annealed in atmosphere.Thermal oxide layer 11 can be very good to be passivated surface protection, the table top side particularly formed to etching
Wall.
As shown in fig. 7, the passivation layer of deposit thickness is passivated protection, the medium of mesa top electrode and incidence window is removed
With the medium at table top bottom electrode window 12, anti-reflecting layer medium is deposited.The thickness of antireflection dielectric layer is with according to optical wavelength
Destructive interference is calculated.Remove the medium at mesa top and table top bottom electrode window 12.
As shown in figure 8, metal ohmic contact is deposited respectively at the p+ layers of mesa top and bottom and n+ layer electrode window through ray,
And carry out annealing and form Ohmic contact 7.The metal ohmic contact of p+ layers and n+ layers can be identical can also be it is different, this
In selection Ni/Ti/Al, once annealed after having deposited while form Ohmic contact.Done after the completion of Ohmic contact on window
Interconnect metal.
It is described above simply to illustrate that the utility model, it is understood that the utility model be not limited to the above implementation
Example, meets the various variants of the utility model thought within the scope of protection of the utility model.
Claims (3)
1. a kind of SiC avalanche photodides, it is characterised in that the junction termination structures of the SiC avalanche photodides are non-
The table top of linear tilt；Angle between the inclined-plane and substrate plane of the table top is gradually increased by bottom to the top of table top；
Angle between the inclined-plane and substrate plane is 30-60 ° in the bottom of table top, is 60-90 ° at the top of table top.
2. SiC avalanche photodides according to claim 1, it is characterised in that the SiC avalanche photodides are adopted
With the pn diodes of epitaxial structure, the epitaxial structure is n++/n-/p+/buffer/n+sub or p++/p-/n+/buffer/n
+sub；N+sub refers to the undermost SiC substrate of material.
3. SiC avalanche photodides according to claim 1, it is characterised in that the depth of the table top is to etch away
Whole n- or p- drift layers, over etching enter p+ or n+ layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621445212.1U CN206672951U (en) | 2016-12-27 | 2016-12-27 | A kind of SiC avalanche photodides |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621445212.1U CN206672951U (en) | 2016-12-27 | 2016-12-27 | A kind of SiC avalanche photodides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206672951U true CN206672951U (en) | 2017-11-24 |
Family
ID=60356257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621445212.1U Active CN206672951U (en) | 2016-12-27 | 2016-12-27 | A kind of SiC avalanche photodides |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206672951U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910360A (en) * | 2017-12-06 | 2018-04-13 | 中国工程物理研究院电子工程研究所 | A kind of novel silicon carbide small angle inclination table top terminal structure and preparation method thereof |
| WO2019210658A1 (en) * | 2018-05-04 | 2019-11-07 | 中国电子科技集团公司第十三研究所 | Method for manufacturing tilted mesa and method for manufacturing detector |
| WO2020011201A1 (en) * | 2018-07-10 | 2020-01-16 | 南京集芯光电技术研究院有限公司 | Algan or gan ultraviolet avalanche photodetector based on field plate structure, and preparation method therefor |
| CN110988642A (en) * | 2019-12-11 | 2020-04-10 | 上海华碧检测技术有限公司 | Method and device for testing avalanche tolerance of IGBT power device |
-
2016
- 2016-12-27 CN CN201621445212.1U patent/CN206672951U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910360A (en) * | 2017-12-06 | 2018-04-13 | 中国工程物理研究院电子工程研究所 | A kind of novel silicon carbide small angle inclination table top terminal structure and preparation method thereof |
| WO2019210658A1 (en) * | 2018-05-04 | 2019-11-07 | 中国电子科技集团公司第十三研究所 | Method for manufacturing tilted mesa and method for manufacturing detector |
| US11349043B2 (en) | 2018-05-04 | 2022-05-31 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for manufacturing tilted mesa and method for manufacturing detector |
| WO2020011201A1 (en) * | 2018-07-10 | 2020-01-16 | 南京集芯光电技术研究院有限公司 | Algan or gan ultraviolet avalanche photodetector based on field plate structure, and preparation method therefor |
| CN110988642A (en) * | 2019-12-11 | 2020-04-10 | 上海华碧检测技术有限公司 | Method and device for testing avalanche tolerance of IGBT power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106653932A (en) | SiC avalanche photodiode and fabrication method thereof | |
| CN206672951U (en) | A kind of SiC avalanche photodides | |
| CN101527308B (en) | Plane-structure InGaAs array infrared detector | |
| TWI419349B (en) | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell | |
| KR101329222B1 (en) | Solar cell, manufacturing method thereof, and solar cell module | |
| KR102453503B1 (en) | Metallization of solar cells | |
| US9337380B2 (en) | Method for fabricating heterojunction interdigitated back contact photovoltaic cells | |
| JP2011061197A (en) | Solar cell, and method of manufacturing the same | |
| JP6692797B2 (en) | Solar cell and manufacturing method thereof | |
| CN110190137B (en) | Double-layer passivation film for front contact passivation and preparation method thereof | |
| JP2010186900A (en) | Solar cell and method of manufacturing the same | |
| CN105977338A (en) | Low-dark-current PIN detector and processing method thereof | |
| JP2010161310A (en) | Backside electrode type solar cell and method of manufacturing the same | |
| CN104617184B (en) | PIN Mesa InGaAs infrared detector and preparation method thereof | |
| JP6021392B2 (en) | Method for manufacturing photoelectric conversion device | |
| KR101153377B1 (en) | Back junction solar cell having improved rear structure and method for manufacturing therof | |
| WO2019007189A1 (en) | Single-sided polo cell and manufacturing method thereof | |
| CN105470347A (en) | PERC (PowerEdge RAID Controller) battery manufacturing method | |
| TWM517422U (en) | Heterojunction solar cell with local passivation | |
| JP2013115057A (en) | Method for manufacturing crystalline silicon solar cell | |
| CN102683504B (en) | The method of crystal silicon solar energy battery manufacture craft is improved by ion implantation arsenic | |
| CN114050199A (en) | Indium antimonide planar focal plane detector chip and preparation thereof | |
| CN106328752A (en) | Planar lateral collection structure indium gallium arsenic infrared detector chip | |
| CN106409939B (en) | The preparation method of plane lateral collection structure indium-gallium-arsenide infrared detector chip | |
| JP5236669B2 (en) | Electrode manufacturing method, solar cell manufacturing method, and photoelectric conversion element manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20180814 Granted publication date: 20171124 |
|
| PD01 | Discharge of preservation of patent | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20200810 Granted publication date: 20171124 |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231025 Address after: Room JZ2467, Yard 2, Junzhuang Road, Junzhuang Town, Mentougou District, Beijing, 102399 (cluster registration) Patentee after: Beijing Xingyun Lianzhong Technology Co.,Ltd. Address before: 100176 courtyard 17, Tonghui Ganqu Road, Daxing Economic and Technological Development Zone, Beijing Patentee before: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. |