CN117253867B

CN117253867B - Photovoltaic module and diode heat dissipation method

Info

Publication number: CN117253867B
Application number: CN202211511079.5A
Authority: CN
Inventors: 曹孙根; 张曹朋; 冯亚宁
Original assignee: Anhui Juxin Semiconductor Technology Co ltd
Current assignee: Anhui Juxin Semiconductor Technology Co ltd
Priority date: 2022-11-29
Filing date: 2022-11-29
Publication date: 2024-05-31
Anticipated expiration: 2042-11-29
Also published as: CN117253867A

Abstract

The disclosure relates to a photovoltaic module comprising a diode and a heat sink; the heat dissipation device is attached to one side of the cathode layer of the diode; the heat dissipation device is internally provided with a channel with a preset pattern, and a liquid medium is arranged in the channel and used for taking away heat generated by the diode when flowing. According to the embodiment, the heat dissipation device is arranged, so that heat generated by the diode can be dissipated when liquid medium in the heat dissipation device circularly flows, the temperature of the diode is reduced, the diode is ensured to reliably work, and the service life of the diode is prolonged.

Description

Photovoltaic module and diode heat dissipation method

Technical Field

The disclosure relates to the technical field of new energy, in particular to a photovoltaic module.

Background

Along with the higher and higher voltage requirement (such as more than 2000V) of the diode, the diode can generate secondary avalanche, namely, the electric field near the NN+ junction is strengthened due to avalanche electrons, so that the diode generates secondary avalanche near the NN+ junction, and at the moment, the diode instantaneously passes through large current and generates a large amount of heat energy, and the diode can be burnt out due to the fact that the large amount of heat energy cannot be emitted in a short time.

Disclosure of Invention

The present disclosure provides a photovoltaic module to address the deficiencies of the related art.

According to a first aspect of embodiments of the present disclosure, there is provided a photovoltaic module comprising a diode and a heat sink; the heat dissipation device is attached to one side of the cathode layer of the diode; the heat dissipation device is internally provided with a channel with a preset pattern, and a liquid medium is arranged in the channel and used for taking away heat generated by the diode when flowing.

In one embodiment, a heat spreader device includes an upper substrate and a lower substrate; and forming a first groove with a preset pattern on the upper substrate, forming a second groove with a preset pattern on the lower substrate, and forming the channel after the first groove and the second groove are opposite to each other and are bonded with each other.

In an embodiment, the preset pattern is matched with a heat map corresponding to the diode, where the heat map refers to an image formed by temperatures at different positions when the diode works.

In one embodiment, the heat sink device includes a liquid inflow port and a liquid outflow port; the inner diameter of the liquid inflow opening is smaller than the inner diameter of the liquid outflow opening.

In one embodiment, a plurality of inclined bodies pointing to a preset flow direction are arranged in the channel.

In an embodiment, the thickness of the tail of the ramp is less than a predetermined thickness and the stiffness of the first side of the ramp is less than the stiffness of the second side such that the ramp swings with the liquid medium in the predetermined flow direction.

In an embodiment, the inner diameter of the channel is larger and larger in the direction of the preset flow direction.

In an embodiment, the photovoltaic module further comprises a plurality of diode pins, a liquid inlet pin, and a liquid outlet pin; the diode pin is used for being electrically connected with the diode, the liquid inlet pin is communicated with the liquid inflow port, and the liquid outlet pin is communicated with the liquid outflow port.

In one embodiment, a reflux channel is arranged between the liquid inlet pin and the liquid outlet pin; an inlet cover body is arranged in the liquid inlet pin, and an outlet cover body is arranged in the liquid outlet pin;

the inlet cover body is used for sealing the liquid inlet pin in a first state and sealing the backflow channel in a second state;

The outlet cover is used for sealing the liquid outlet pin in a first state and sealing the backflow channel in a second state;

the first state refers to a state of not accessing the external channel, and the second state refers to a state of accessing the external channel.

In one embodiment, the inlet cap body has a diameter greater than an inner diameter of the return passage; a circular groove is formed in the opening of the backflow channel; the inlet cover body seals the return channel when positioned in the groove in a second state; and the diameter of the outlet cover body is larger than the inner diameter of the backflow channel; a circular groove is formed in the opening of the backflow channel; the outlet cover seals the return passage when in the second state in the recess.

In an embodiment, the inlet cover body and/or the outlet cover body is further provided with a protrusion; the protrusion is for being inserted into the return passage in the second state to close the return passage.

In an embodiment, the photovoltaic module further comprises an encapsulant; the package body is used for packaging the diode, the heat dissipation device, the diode pin, the liquid inlet pin and the liquid outlet pin according to a preset structure.

In an embodiment, the photovoltaic module further comprises a base comprising a pin receptacle, a liquid inlet pin plug, and a liquid outlet pin plug;

the pin jack is used for fixing the diode pin and forming electric connection;

the liquid inlet pin plug is used for being inserted into the liquid inlet pin so as to enable liquid medium to flow into the heat dissipation device;

The liquid outlet pin plug is used for being inserted into the liquid outlet pin so as to enable liquid medium to flow out of the heat dissipation device.

In one embodiment, the photovoltaic module further comprises a tank storing a liquid medium, the tank being in communication with the liquid inlet pin plug and the liquid outlet pin plug on the base, respectively.

The technical scheme provided by the embodiment of the disclosure can comprise the following beneficial effects:

The photovoltaic module provided by the embodiment of the disclosure comprises a diode and a heat dissipation device; the heat dissipation device is attached to one side of the cathode layer of the diode; the heat dissipation device is internally provided with a channel with a preset pattern, and a liquid medium is arranged in the channel and used for taking away heat generated by the diode when flowing. Therefore, the heat dissipation device is arranged, so that heat generated by the diode can be dissipated when the liquid medium in the heat dissipation device circularly flows, the temperature of the diode is reduced, the diode is ensured to reliably work, and the service life of the diode is prolonged.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.

Fig. 1 is a schematic diagram of a photovoltaic module shown according to an exemplary embodiment.

Fig. 2 is a schematic diagram illustrating a structure of a diode according to an exemplary embodiment.

Fig. 3 is a schematic diagram of another diode structure according to an exemplary embodiment.

Fig. 4 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 5 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 6 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 7 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 8 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 9 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 10 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 11 is a schematic diagram illustrating a structure of yet another diode according to an exemplary embodiment.

Fig. 12 is a schematic diagram illustrating a channel of a preset pattern according to an exemplary embodiment.

Fig. 13 is a schematic diagram showing a structure of a channel of a preset pattern according to an exemplary embodiment.

Fig. 14 is a schematic diagram illustrating a channel of a preset pattern according to an exemplary embodiment.

Fig. 15 is a schematic diagram of a heat sink device according to an exemplary embodiment.

Fig. 16 is a schematic diagram illustrating a structure of a channel according to an exemplary embodiment.

Fig. 17 is a schematic diagram showing a structure of a bevel body according to an exemplary embodiment.

Fig. 18 is a schematic diagram showing a state of a sort of slope body according to an exemplary embodiment.

Fig. 19 is a schematic view showing a state of another slant body according to an exemplary embodiment.

Fig. 20 is a schematic view showing a state of still another slope according to an exemplary embodiment.

Fig. 21 is a schematic diagram of a pin of a photovoltaic module, according to an example embodiment.

Fig. 22 is a schematic diagram illustrating a return channel in a heat sink device according to an exemplary embodiment.

Fig. 23 is a schematic diagram of an outlet cover, according to an example embodiment.

Fig. 24 is a schematic view of another outlet cover shown according to an exemplary embodiment.

Fig. 25 is a schematic view of yet another outlet cover, according to an example embodiment.

Fig. 26 is a schematic structural view of an outlet cover body according to an exemplary embodiment.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The embodiments described by way of example below are not representative of all embodiments consistent with the present disclosure. Rather, they are merely examples of apparatus consistent with some aspects of the disclosure as detailed in the accompanying claims. The features of the following examples and embodiments may be combined with each other without any conflict.

To solve the above technical problem, an embodiment of the present disclosure provides a diode, as shown in fig. 1, including a diode 10 and a heat sink 20. The diode 10 and the heat sink are bonded by the adhesive layer 30, and the adhesive layer 30 has a heat conducting function, so that heat generated by the diode 10 is conducted to the heat sink 20. The heat sink 20 radiates heat.

Fig. 2 illustrates a schematic structure of a diode. Referring to fig. 2, the diode 10 includes an anode layer 11, a substrate layer 12, and a cathode layer 13, which are sequentially disposed. The anode layer 11 and the cathode layer may have impurities with different doping concentrations to represent corresponding polarities. A buffer layer 14 bonded to the substrate layer 12 is provided in the cathode layer 13; the buffer layer 14 includes a plurality of buffer areas therein; the material in each buffer region is the same as the material in anode layer 11 and the doping concentration of each buffer region is less than the doping concentration of the anode layer and greater than the doping concentration of substrate layer 12.

The diode provided in this embodiment can establish a forward electric field between the anode layer 11 and the cathode layer 13 after the anode layer 11 and the cathode layer 13 apply positive voltage and negative voltage, respectively, and the forward electric field makes electrons freely move from the cathode layer 13 to the anode layer 11, so that a current from the anode to the cathode is formed, that is, the diode is in a forward conduction state. When the diode applies a negative voltage and a positive voltage to the anode layer 11 and the cathode layer 13, respectively, a reverse electric field can be established between the anode layer 11 and the cathode layer 13, which reverse electric field prevents electrons from moving from the cathode layer 13 to the anode layer 11, see fig. 3; thus, the voltage difference between the anode layer 11 and the cathode layer 13 needs to reach a predetermined voltage to break down the reverse electric field, so that the diode is in a (restorably) reverse conducting state.

Considering that a diode, particularly a high voltage diode, in a reverse recovery process after a turn-on process, electrons move from the anode layer 11 to generate a secondary avalanche due to the existence of the reverse electric field, particularly a strong electric field formed between the cathode layer 13 and the substrate layer 12; during the secondary avalanche process, a large amount of energy is released by the collision of electrons and holes, so that the diode cannot dissipate heat in time, and the diode is burnt out. In this embodiment, by disposing the buffer layer 14 between the anode layer 11 and the substrate layer 12, a large amount of holes can be injected into the substrate layer 12 during the secondary avalanche, so as to weaken the strong electric field formed between the cathode layer 13 and the substrate layer 12, reduce the energy released by the collision of electrons and holes, further reduce the temperature of the diode, ensure the normal and reliable operation of the diode, and facilitate the extension of the service life of the diode.

Considering that a diode is generally used in an ac circuit, the current in the diode may have a skin effect, that is, the current at the edge of the diode may be greater than the current at the center portion, or the number of electrons at the edge of the diode may be greater than the number of electrons at the center portion, for which reason, referring to fig. 4, the thickness d of the plurality of buffer areas in this embodiment sequentially increases from inside to outside. That is, in the case where the doping concentrations of the buffer regions are the same or similar (less than the preset threshold), the smaller the thickness of the buffer regions, the fewer holes are provided, i.e., the weaker the buffer regions closer to the center portion are capable of relieving the strong electric field and the stronger the buffer regions closer to the outside are capable of relieving the strong electric field, so that less heat is generated in both the center portion and the outside region of the diode, and burning of the diode is avoided. In one example, the thickness of the plurality of buffer regions may be set to 0.1to 0.5 microns. For example, the thickness of the buffer region may be 0.1 microns, 0.2 microns, 0.3 microns, 0.4 microns, and 0.5 microns from the center region to the outer region, with stepped thicknesses being convenient to manufacture. Also, the thickness of each buffer region can be reduced by providing a plurality of buffer regions in this example.

In an embodiment, considering that the holes provided by the buffer area increase from inside to outside, the area of the buffer area may be adjusted in this embodiment, referring to fig. 5, that is, the areas of the buffer areas sequentially increase from inside to outside, so as to achieve the effect of adjusting the buffer areas to provide different numbers of holes, so as to achieve the effect of weakening the strong electric field between the cathode layer 13 and the substrate layer 12. In an example, the area of the buffer region may be 1-100 square micrometers, such as 10 square micrometers, 20 square micrometers, 30 square micrometers, 40 square micrometers, 50 square micrometers, 60 square micrometers, 70 square micrometers, 80 square micrometers, 90 square micrometers, and 100 square micrometers, which may be selected according to the specific scenario, and the corresponding schemes fall within the protection schemes of the present disclosure.

In another embodiment, the buffer area provides an increase in holes when expanding from inside to outside. In the case that the thicknesses of the plurality of buffer regions sequentially increase from inside to outside and/or the areas of the plurality of buffer regions sequentially increase, referring to fig. 6, the doping concentrations of the plurality of buffer regions may be the same in this embodiment, so that the buffer regions are formed by one process conveniently, and the yield is improved. In this embodiment, the doping concentration of the buffer region is 1e ¹³～1e¹⁷/cm³. In an example, the concentration of the buffer areas is 1e ¹³/cm³、1e¹⁴/cm³、1e¹⁷/cm³, which can be selected according to a specific scenario, and the corresponding scheme falls into the protection scheme of the present disclosure.

In yet another embodiment, the buffer area provides an increase in holes in consideration of expansion from inside and outside. In the case that the thicknesses of the plurality of buffer regions become larger from inside to outside and/or the areas become larger from inside to outside, referring to fig. 7, the doping concentrations of the plurality of buffer regions also increase from inside to outside (the doping concentration increases are indicated by darkening of colors) in this embodiment, and the plurality of buffer regions can provide more and more holes from inside to outside, so as to facilitate rapid alleviation of the strong electric field. In this embodiment, the doping concentration of the buffer region is 1e ¹³～1e¹⁷/cm³. In an example, the concentration of the buffer areas is 1e ¹³/cm³、1e¹⁴/cm³、1e¹⁷/cm³, which can be selected according to a specific scenario, and the corresponding scheme falls into the protection scheme of the present disclosure.

It is understood that, in consideration of the difference in thickness, area and/or doping concentration of the plurality of buffer regions, the buffer regions may be formed by a plurality of processes to ensure that the buffer regions meet the requirements. It should be noted that, the thickness, the area and/or the doping concentration of the buffer region may be referred to in the foregoing embodiments, and the combined solutions fall within the protection scope of the present disclosure.

In another embodiment, considering that the holes provided by the buffer areas increase when expanding from inside to outside, in the case that the thicknesses of the respective buffer areas are the same, referring to fig. 8, the areas of the plurality of buffer areas become larger sequentially from inside to outside, so that the buffer areas far from the center provide more holes, to facilitate rapid alleviation of a strong electric field. In an example, the area of the buffer region may be 1-100 square micrometers, such as 10 square micrometers, 20 square micrometers, 30 square micrometers, 40 square micrometers, 50 square micrometers, 60 square micrometers, 70 square micrometers, 80 square micrometers, 90 square micrometers, and 100 square micrometers, which may be selected according to the specific scenario, and the corresponding schemes fall within the protection schemes of the present disclosure. It is understood that, considering that the thicknesses of the plurality of buffer regions are the same, a single (Mask) process may be used to form the plurality of buffer regions, thereby improving the yield.

In another embodiment, in the case that the plurality of buffer regions have the same thickness and the area sequentially increases from inside to outside, referring to fig. 9, the doping concentration of each buffer region in the plurality of buffer regions is the same, so that the buffer regions can be formed in the same process, and the productivity and the yield can be improved. In this embodiment, the doping concentration of the buffer region is 1e ¹³～1e¹⁷/cm³. In an example, the concentration of the buffer areas is 1e ¹³/cm³、1e¹⁴/cm³、1e¹⁷/cm³, which can be selected according to a specific scenario, and the corresponding scheme falls into the protection scheme of the present disclosure.

In another embodiment, in the case that the thickness of the plurality of buffer regions is the same and the area sequentially increases from inside to outside, referring to fig. 10, the doping concentrations of the plurality of buffer regions sequentially increase from inside to outside, so that buffer regions at different positions can provide different numbers of holes, which is beneficial to weakening the strong electric field between the cathode layer 13 and the substrate layer 12. In this embodiment, the doping concentration of the buffer region is 1e ¹³～1e¹⁷/cm³. In an example, the concentration of the buffer areas is 1e ¹³/cm³、1e¹⁴/cm³、1e¹⁷/cm³, which can be selected according to a specific scenario, and the corresponding scheme falls into the protection scheme of the present disclosure.

In one embodiment, considering that the diode may release a large amount of heat during reverse recovery, an arc-shaped trench may be formed at the edge of the PN junction formed by the anode layer 11 and the substrate layer 12 in this embodiment, as shown in fig. 11. Or, because the arc-shaped groove 15 is arranged at the PN junction formed by the anode layer 11 and the substrate layer 12, the protruding structure 16 is formed at the PN junction formed by the cathode layer 13 and the substrate layer 12, and the protruding structure 16 can increase the surface area of the PN junction, thereby facilitating the heat release and avoiding the burning of the diode.

In one embodiment, the heat sink 20 is attached to the cathode layer side of the diode. Referring to fig. 12, a predetermined pattern of channels 21 as shown in fig. 12 is provided in the heat sink 20, and a liquid medium for carrying away heat generated from the diode 10 when flowing is provided in the channels 21.

Referring to fig. 13, the heat spreader device 20 includes an upper substrate 23 and a lower substrate 22. The upper substrate 23 is formed with a first groove 2311 of a predetermined pattern, the lower substrate 22 is formed with a second groove 2211 of a predetermined pattern, and the first groove 2311 and the second groove 2211 form a passage 21 as shown in fig. 14 after the upper substrate 23 and the lower substrate 22 are directly bonded.

In an embodiment, the predetermined pattern may be matched with a heat map corresponding to the diode, where the heat map is an image formed by temperatures at different positions when the diode is operated. The heat map of the diode may be detected in advance. At this time, the higher the heat degree in the heat degree map (i.e. the higher the corresponding temperature), the higher the channel density in the preset pattern; the lower the heat in the heat map, the lower the channel density in the preset pattern. In this way, the channel density is adjusted according to the heat of the heat map of the diode in this embodiment, so that the heat generated by the diode can be absorbed as much as possible, and the effect of reducing the temperature of the diode as soon as possible can be achieved.

In one embodiment, the heat sink device includes a liquid inflow port and a liquid outflow port. Referring to fig. 15, the inner diameter of the liquid inflow port In is smaller than the inner diameter of the liquid outflow port Out. Therefore, in the embodiment, the speed of liquid inflow and outflow can be adjusted by adjusting the inner diameters of the liquid inflow and the liquid outflow, and the flow speed of the liquid can be ensured by the power generated after the liquid is heated, so that the effect of efficient heat dissipation is achieved.

In one embodiment, a plurality of inclined bodies pointing to a preset flow direction are arranged in the channel of the heat dissipation device. Referring to fig. 16, the preset flow direction may be a clockwise flow direction or a counterclockwise flow direction. The anticlockwise flow direction V is shown in figure 16 with the ramp 112 in the channel 111 leading to the tail in the preset direction. It will be appreciated that the provision of the inclined body 112 within the channel 111 is to ensure that the liquid flows in the same direction, thereby accelerating the dissipation of heat.

In one embodiment, the thickness of the tail of the bevel 112 is smaller than the preset thickness, and the effect is shown in fig. 17. Referring to fig. 17, the thickness of the tail of the ramp is less than a preset thickness d0, where d0 meets in the range of 1-20 microns. Referring to the left view of fig. 18, the ramp 112 is in an initial state, where the ramp 112 and the channel sidewall are smaller in size; referring to the right hand view of fig. 18, the ramp 112 may oscillate with the liquid medium, thereby increasing the size of the opening between the ramp and the channel sidewall. However, when the liquid medium flows against the preset flow direction (-V), the slant body 112 follows the swing, which causes the opening between it and the side wall of the passage to become smaller, thereby increasing the flow resistance, as shown in fig. 19. Alternatively, the present embodiment may provide materials of different stiffness on either side of the tail, with the material on the opposite side of the flowing liquid medium being less stiff than the material on the opposite side. Thus, when the liquid medium is forward (V) in the preset direction, the deformation of the material on the opposite side is larger than that of the material on the opposite side, and the effect is as shown on the right side of fig. 20, so that the oblique body swings along with the liquid medium; when the liquid medium flows reversely (-V) in a preset direction, the deformation of the material on the opposite side bears the impact force of the liquid medium, and the deformation is approximately equal to the deformation of the material on the opposite side, so that the swinging amplitude of the inclined body following the liquid medium is smaller, and the effect is shown on the left side of fig. 20, namely the swinging of the inclined body causes the inner diameter of the channel to be smaller, and the flow of the liquid medium is further inhibited. In this way, in this embodiment, the inclined body is provided, so that the liquid medium can flow in a preset direction as soon as possible, and the purpose of heat dissipation as soon as possible is achieved.

It will be appreciated that the above embodiments describe the case where the internal diameters of the channels in the preset pattern are the same. In practical applications, the internal diameters of the channels may be different, and in an example, the internal diameters of the channels of the preset pattern are larger and larger in the preset flow direction, so that the flow resistance of the liquid medium is reduced, that is, the flow speed of the liquid medium is improved, and the heat dissipation efficiency is ensured.

In an embodiment, the photovoltaic module further comprises a plurality of diode pins, a liquid inlet pin and a liquid outlet pin. Referring to fig. 21, a plurality of diode pins 211 are used for electrical connection with the diodes, a liquid inlet pin 212 communicates with a liquid inflow port, and a liquid outlet pin 213 communicates with a liquid outflow port 214. The photovoltaic module further comprises a base, the base comprises a plurality of jacks, and the plurality of diode pins 211, the liquid inlet pins 212 and the liquid outlet pins 213 can be respectively inserted into the corresponding jacks.

In one embodiment, a return channel is provided between the liquid inlet pin and the liquid outlet pin of the heat sink, as shown by return channel 221 in fig. 22. The return channel 221 can return the liquid medium from the outlet to the inlet again, so as to achieve the effect of internal circulation heat dissipation.

In this embodiment, an inlet cover body is disposed in the liquid inlet pin 212, and an outlet cover body is disposed in the liquid outlet pin 213. An inlet cover body is arranged in the liquid inlet pin, and an outlet cover body is arranged in the liquid outlet pin; the inlet cover body is used for sealing the liquid inlet pin in a first state and sealing the backflow channel in a second state; the outlet cover is used for sealing the liquid outlet pin in a first state and sealing the backflow channel in a second state; the first state refers to a state of not accessing the external channel, and the second state refers to a state of accessing the external channel.

Taking the outlet cover as an example, referring to fig. 23, in the first state, the pin in the liquid outlet 214 is not inserted into the liquid outlet pin 213, i.e., the outlet cover 231 seals the liquid outlet pin 213, and at this time, the liquid medium flows from the channel into the return channel 221 and then flows into the liquid inlet pin 212, thereby completing one cycle. This circulation of the liquid medium is referred to as internal circulation, since it is accomplished inside the heat sink.

Referring to fig. 24, in the second state, the pins in the liquid outlet port 214 are inserted into the liquid outlet pins 213 and squeeze the outlet cover 231 to the openings of the return channels 221, i.e., the outlet cover 231 seals the return channels 221, and the liquid medium flows from the channels into the liquid outlet pins 213, and thus flows out of the heat sink. At the same time, the inlet cover body can also seal the backflow channel 221, so that the external liquid medium enters the heat dissipation device, and one cycle is completed. The circulation between the tank storing the liquid medium and/or the plurality of heat dissipating devices is referred to as external circulation, as the liquid medium flows out of the heat dissipating devices.

It will be appreciated that the inlet cover functions similarly to the outlet cover and will not be described in detail herein.

In one embodiment, the diameter of the inlet cover body is larger than the inner diameter of the backflow channel, and a circular groove is formed in the opening of the backflow channel; the inlet cover body seals the return channel when positioned in the groove in the second state; and the diameter of the outlet cover body is larger than the inner diameter of the backflow channel; a circular groove is formed in the opening of the backflow channel; the outlet cover seals the return passage when in the second state in the recess. Referring to fig. 25, the left view illustrates a scenario in which the return channel 221 is not sealed in the first state, and the right view illustrates a scenario in which the outlet cover body 231 is positioned within the circular recess 251 to seal the return channel 221 in the second state. Like this, increased the recess in this embodiment, make the area of contact of lid and recess bigger, sealed reflux channel's effect is better.

In an embodiment, the inlet cover body and/or the outlet cover body is further provided with protrusions; the protrusion is used for being inserted into the return passage in the second state to seal the return passage. Referring to fig. 26, in the second state, the protrusion 261 is located inside the return channel 221, further sealing the return channel, improving the sealing effect.

In an embodiment, the photovoltaic module further comprises a base. With continued reference to fig. 21, the base includes a pin receptacle, a liquid inlet pin plug, and a liquid outlet pin plug. The pin jack is used for fixing the diode pin and forming electric connection; the liquid inlet pin plug is used for being inserted into the liquid inlet pin so as to enable liquid medium to flow into the heat dissipation device; the liquid outlet pin plug is used for being inserted into the liquid outlet pin so as to enable liquid medium to flow out of the heat dissipation device. In this way, in this embodiment, the liquid medium of the heat dissipation device can flow out of the heat dissipation device by arranging the liquid inlet pin plug and the liquid outlet pin plug on the base, so as to increase the length of the liquid medium flowing through the channel, and improve the heat dissipation efficiency.

In one embodiment, the photovoltaic module further comprises a tank storing a liquid medium, the tank being in communication with the liquid inlet pin plug and the liquid outlet pin plug on the base, respectively. In this way, the liquid medium in the heat dissipation device in this embodiment may flow into the tank body, so that the liquid medium with a low temperature in the tank body enters the heat dissipation device, and heat dissipation efficiency is improved.

In an embodiment, the photovoltaic module provided in the embodiments of the present disclosure may be a frequency converter, an inverter, a current transformer, a transformer, or the like.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This disclosure is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

It is to be understood that the present disclosure is not limited to the precise arrangements and instrumentalities shown in the drawings, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A photovoltaic module comprising a diode and a heat sink; the heat dissipation device is attached to one side of the cathode layer of the diode; a channel with a preset pattern is arranged in the heat dissipation device, and a liquid medium is arranged in the channel and used for taking away heat generated by the diode when flowing;

The heat dissipation device comprises an upper substrate and a lower substrate; forming a first groove with a preset pattern on the upper substrate, forming a second groove with a preset pattern on the lower substrate, and forming the channel after the upper substrate and the lower substrate are opposite to each other;

The heat sink device includes a liquid inflow port and a liquid outflow port; the inner diameter of the liquid inflow opening is smaller than the inner diameter of the liquid outflow opening;

The photovoltaic module further comprises a plurality of diode pins, a liquid inlet pin and a liquid outlet pin; the diode pin is used for being electrically connected with the diode, the liquid inlet pin is communicated with the liquid inflow port, and the liquid outlet pin is communicated with the liquid outflow port;

a reflux channel is arranged between the liquid inlet pin and the liquid outlet pin; an inlet cover body is arranged in the liquid inlet pin, and an outlet cover body is arranged in the liquid outlet pin;

The first state refers to a state of not accessing the external channel, and the second state refers to a state of accessing the external channel;

the diameter of the inlet cover body is larger than the inner diameter of the backflow channel; a circular groove is formed in the opening of the backflow channel; the inlet cover body seals the return channel when positioned in the groove in a second state; and the diameter of the outlet cover body is larger than the inner diameter of the backflow channel; a circular groove is formed in the opening of the backflow channel; the outlet cover seals the return passage when in the second state in the recess.

2. The photovoltaic module of claim 1, wherein the predetermined pattern matches a thermal map corresponding to the diode, the thermal map being an image of temperatures at different locations of the diode when the diode is in operation.

3. The photovoltaic module of claim 1, wherein a plurality of beveled bodies are disposed within the channel that are directed toward a predetermined flow direction.

4. A photovoltaic module according to claim 3, wherein the tail thickness of the bevel is less than a predetermined thickness and the rigidity of the first side of the bevel is less than the rigidity of the second side such that the bevel swings with the liquid medium towards the predetermined flow direction.

5. A photovoltaic module according to claim 3, wherein the inner diameter of the channel is larger and larger in a predetermined direction of flow.

6. The photovoltaic module according to claim 1, wherein the inlet cover body and/or the outlet cover body is further provided with protrusions; the protrusion is for being inserted into the return passage in the second state to close the return passage.

7. The photovoltaic module of claim 1, further comprising a base including a pin receptacle, a liquid inlet pin plug, and a liquid outlet pin plug;

the pin jack is used for fixing the diode pin and forming electric connection;

8. The photovoltaic module of claim 7, further comprising a tank storing a liquid medium, the tank in communication with a liquid inlet pin plug and a liquid outlet pin plug on the base, respectively.