CN117252137A - Modeling method for total dose radiation induced leakage current of MOS transistor - Google Patents
Modeling method for total dose radiation induced leakage current of MOS transistor Download PDFInfo
- Publication number
- CN117252137A CN117252137A CN202311181831.9A CN202311181831A CN117252137A CN 117252137 A CN117252137 A CN 117252137A CN 202311181831 A CN202311181831 A CN 202311181831A CN 117252137 A CN117252137 A CN 117252137A
- Authority
- CN
- China
- Prior art keywords
- total dose
- current
- leakage current
- modeling
- inversion region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004088 simulation Methods 0.000 claims abstract description 41
- 230000000694 effects Effects 0.000 claims abstract description 19
- 238000004458 analytical method Methods 0.000 claims abstract description 5
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 claims description 20
- 238000001228 spectrum Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 230000001419 dependent effect Effects 0.000 claims description 3
- 238000002474 experimental method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 235000013599 spices Nutrition 0.000 abstract description 10
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000012886 linear function Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 231100000987 absorbed dose Toxicity 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a modeling method of total dose radiation induced leakage current of MOS transistor, which comprises firstly generating radiation data, and then generating current variation delta I caused by different total doses D Calculating delta I according to different working areas D Modeling, establishing a SPICE model containing the MOS tube and the current source, current simulation based on the simplified model, and error analysis. The invention has the advantages that a simplified model is established to realize the accurate simulation of the total dose effect off-state leakage current, thereby further improving the efficiency and reducing the cost.
Description
Technical Field
The invention belongs to the technical field of radiation effect, and particularly relates to a total dose radiation induced leakage current modeling method.
Background
At present, more and more electronic devices are applied to radiation environments, and high-energy particles cause radiation damage to devices, so that the reliability of integrated circuits is affected. The total dose effect is an important radiation damage effect, and accumulation of trapped charges increases off-state leakage current of the device, which also increases power consumption of the integrated circuit, changes key parameters and even fails functions. How to simulate the total dose resistance of an integrated circuit is a major problem at present. The radiation-induced off-state leakage current mechanism is complex, the amplitude of which varies with the device size, the absorbed dose, the drain voltage and the substrate bias voltage, and the existing modeling and simulation methods mainly depend on the data of ground irradiation tests and TCAD simulation.
Modeling for radiation-induced off-state leakage current, literature S.A./>N./>Solmaz and M.B.Yelten,"Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3,"in IEEE Transactions on Electron Devices,vol.66,no.11,pp.4617-4622,Nov.2019,doi:10.1109/TED.2019.2926931]The method provides a thinking that ground total dose experimental test or TCAD simulation data are applied to the grid source voltage V GS The off-state leakage current value at 0V is taken as the amplitude of the fixed current source, and the current source is added into the circuit for simulation. However, with V GS The off-state leakage current increases with the increase, and the method does not consider the phenomenon, and the method is characterized in that GS The off-state leakage current evaluated is small between 0V and the threshold voltage.
The literature [ I.S.Esqueda, H.J.Barnaby and M.L.panels, "Two-dimensional methodology for modeling radiation-reduced off-state leakage in CMOS technologies," in IEEE Transactions on Nuclear Science, vol.52, no.6, pp.2259-2264, dec.2005, doi:10.1109/TNS.2005.860671.] proposes a Two-dimensional device simulation method for modeling the off-state leakage current of MOS transistors. The modeling thinking is that off-state leakage current generation is modeled as parasitic MOS transistors generated by STI edges, and the total off-state leakage current is the sum of leakage currents of all the parasitic MOS transistors. The effective channel length and width, the effective mobility and the effective threshold voltage of the parasitic MOS transistor are determined by the grid bias voltage and the density of oxide charges captured in the STI, and finally, parameters are combined into a circuit model for simulation, so that the leakage current of the parasitic MOS transistor is calculated. However, it is very difficult to obtain the parameters from the TCAD two-dimensional device model, the modeling process is complicated, and the cost is high.
Aiming at the problems existing in the operation, a simple model is established to realize the accurate simulation of the total dose effect off-state leakage current, and the improvement of the efficiency and the reduction of the cost are very necessary.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a modeling method for total dose radiation induced leakage current of a MOS transistor, which comprises the steps of firstly generating radiation data and then generating current variation delta I caused by different total doses D Calculating delta I according to different working areas D Modeling, establishing a SPICE model containing the MOS tube and the current source, current simulation based on the simplified model, and error analysis. The invention has the advantages that a simplified model is established to realize the accurate simulation of the total dose effect off-state leakage current, thereby further improving the efficiency and reducing the cost.
The technical scheme adopted by the invention for solving the technical problems comprises the following steps:
step 1: acquiring current and voltage data before and after total dose irradiation and under different total doses;
step 2: i at different total doses D -V GS Data and unirradiated I D -V GS The curve data are subjected to difference to obtain I caused by total dose effect D -V GS Curve change Δi D As in formula (1):
I D (rad)＝I D (prerad)+ΔI D (1)
wherein DeltaI D I caused by the total dose effect D -V GS Curve change, I D (prerad) is the leakage current before irradiation, I D (rad) is the leakage current after irradiation;
step 3: delta I is calculated according to a semiconductor physical model D Dividing into a weak inversion region, a strong inversion region and a velocity saturation region for modeling, and I D -V GS The formulas are shown in (2) (3) (4), respectively.
Wherein I is DSwi Representing the current in the weak inversion region of the transistor, I DSsi Represents the current in the strong inversion region of the transistor, u represents the carrier mobility, I DSvs Representing transistor speed saturation region current, V GS Is the gate-source voltage, V T As the threshold voltage of the power supply is set,representing the transition point of the weak inversion region and the strong inversion region,>indicating the transition point of the strong inversion region and the velocity saturation region, the factor n being dependent on the bias voltage, +.>Between 70mV and 80mV, v sat At saturation rate, C ox Capacitance of gate oxide layer per unit area, μ is mobility, W, L represents device size, I D0 As characteristic current, nkT/q represents a scale factor, k is Boltzmann constant, and q is electron quantity;
for DeltaI D Is approximated in a weak inversion region with a double-exponential model; approximation is carried out in a strong inversion region by a primary function model; taking ΔI in the velocity saturation region D An average value in the region;
step 4: ΔI D After modeling is complete, ΔI is performed in a spectrum simulation environment D The model is described by Verilog-A and ΔI D A current source, considered to be controlled by the gate-source voltage and the total dose, is connected in parallel with the transistor;
step 5: adding the MOS tube current and the current source current to represent the leakage current after total dose irradiation, and realizing total dose effect leakage current simulation based on a reduced model in spectrum;
step 6:performing error analysis; i in a computing spectrum simulator D -V GS Curve and corresponding irradiation dose TCAD I D -V GS Error of curve, if the error is within the allowable range, then receiving delta I D Modeling; otherwise, repeating the fitting process, correcting fitting parameters of the weak inversion region, the strong inversion region and the speed saturation, and carrying out modeling again.
Preferably, the method for acquiring the current and voltage data in the step 1 includes TCAD total dose simulation or ground total dose experiment.
Preferably, the saidIs typically 5L.
The beneficial effects of the invention are as follows:
the total dose radiation induced leakage current modeling method of the MOS transistor provided by the invention realizes the simulation of off-state leakage current in a spot simulator by means of a simplified model, and is suitable for the leakage current modeling of a weak inversion region, a strong inversion region and speed saturation of the MOS transistor; meanwhile, radiation-induced leakage current simulation under any total dose can be realized, the cost of total dose effect simulation is reduced, and the time for evaluating the radiation resistance of the circuit is shortened.
Drawings
Fig. 1 is a flow chart of modeling total dose radiation induced leakage current of a MOS transistor according to the present invention.
FIG. 2 shows ΔI of the present invention D Modeling schematic.
FIG. 3 is a schematic illustration of the total dose I after TCAD simulation in accordance with an embodiment of the invention D -V GS A curve.
FIG. 4 is a graph of I after SPICE simulated total dose irradiation in accordance with an embodiment of the present invention D -V GS A curve.
FIG. 5 shows TCAD and SPICE off-state leakage current errors at 500krad for an embodiment of the present invention.
FIG. 6 shows the TCAD and SPICE off-state leakage current maximum error at 100-500 krad for the example of the present invention.
Fig. 7 shows a three-dimensional structure of a 0.18 μm NMOS device in accordance with an embodiment of the present invention.
FIG. 8 shows ΔI after total dose irradiation in accordance with an embodiment of the present invention D A curve.
FIG. 9 is a schematic diagram of a Verilog-A model in accordance with an embodiment of the present invention.
FIG. 10 shows an embodiment of the invention ΔI D Spectrum simulation results of (c).
Detailed Description
The invention will be further described with reference to the drawings and examples.
The invention aims to accurately model radiation-induced off-state leakage current of a MOS transistor, and the leakage current simulation evaluation of analog and digital integrated circuits is completed by dividing the transfer characteristic curve variation caused by total dose effect into three areas of weak inversion area, strong inversion area and speed saturation for modeling and realizing by using Verilog-A, and finally integrating the three areas into a spectrum simulator.
The flow chart of the modeling method of the total dose radiation induced leakage current of the MOS transistor is shown in figure 1.
The specific modeling steps are as follows:
the first step: current-voltage data are obtained before and after total dose irradiation and at different total doses. The data acquisition mode comprises TCAD total dose simulation or ground total dose experiment.
And a second step of: i at different total doses D -V GS Data and unirradiated I D -V GS The curve data are subjected to difference to obtain I caused by total dose effect D -V GS Curve change Δi D As in equation (1).
I D (rad)＝I D (prerad)+ΔI D (1)
Wherein DeltaI D I caused by the total dose effect D -V GS Curve change, I D (prerad) is the leakage current before irradiation, I D (rad) is the leakage current after irradiation.
And a third step of: delta I is calculated according to a semiconductor physical model D Dividing into a weak inversion region, a strong inversion region and a velocity saturation region for modeling, and I D -V GS The formulas are shown in (2) (3) (4), respectively.
Wherein V is GS Is the gate-source voltage, V T As the threshold voltage of the power supply is set,representing the transition point of the weak inversion region and the strong inversion region,>indicating the transition point of the strong inversion region and the velocity saturation region, the factor n being dependent on the bias voltage, +.>About 70mV to 80mV, v sat At saturation rate, C ox Capacitance of gate oxide layer per unit area, μ is mobility +.>Is typically 5L. W, L the device size, I D0 For the characteristic current, nkT/q represents a scale factor, k is a Boltzmann constant, and q is an electron quantity. For DeltaI D In order to simulate the phenomenon that the off-state leakage current amplitude increases, the leakage current change is slowed down and the leakage current platform is prolonged along with the increase of total dose in a weak inversion region, the phenomenon is approximated by a double-index model; approximation is carried out in a strong inversion region by a primary function model; taking ΔI in the velocity saturation region D The mean value in this region.
Fourth step: ΔI D After modeling is complete, ΔI is performed in a spectrum simulation environment D The model is described by Verilog-A and ΔI D Considered as a current source controlled by the gate-source voltage and the total dose, which is connected in parallel with the transistor, as shown in fig. 2.
Fifth step: and adding the MOS tube current and the current source current to obtain the leakage current after total dose irradiation, and realizing total dose effect leakage current simulation based on a reduced model in spectrum.
Sixth step: and (5) performing error analysis. I in a computing spectrum simulator D -V GS Curve and corresponding irradiation dose TCAD I D -V GS And if the error of the curve is within the allowable range, modeling is acceptable, otherwise, the fitting functions of the weak inversion region, the strong inversion region and the velocity saturation are adjusted, and modeling is performed again.
The key point of the invention is that the modeling method of total dose radiation induced leakage current of the MOS transistor is implemented by I of weak inversion region, strong inversion region and velocity saturation three regions D -V GS And modeling the curve variation, and reproducing the TCAD total dose leakage current simulation curve in a spectrum simulation environment. By writing into the Verilog-a model, simulations of radiation induced off-state leakage current can be integrated into the ASIC standard design flow.
The simulated NMOS transistor size in the invention is 0.22 mu m/0.18 mu m, and the delta I of the device is equal to that of the NMOS transistor D Modeling and implementing the model in the form of Verilog-a in a spectrum simulator. Performing TCAD total dose effect simulation and SPICE leakage current modeling simulation on the NMOS tube respectively to obtain I under different doses D -V GS The curves are shown in figures 3 and 4.
When tid=500 krad, at V GS Calculating the error between the SPICE simulation result and the TCAD total dose simulation result in the invention according to the formula (5) within the range of 0V-1.8V, I D,TCAD Representing TCAD simulation I at a certain dose D -V GS Curve I D,SPICE Represents SPICE simulation I at a dose D -V GS The curve and error results are shown in fig. 5. At 500krad, the error value is 25.61% maximum, and only one point is higher than 20%, most points have an error value below 10%. Maximum error at different dosesAs shown in FIG. 6, the error distribution at each dose is similar to that of FIG. 5, with the error values for most points being less than 10%, due to TCAD three-dimensional device modeling and ΔI D Errors in the fitting process result in minority point error values greater than 20%.
Examples:
the flow chart of the invention is shown in figure 1. The selected device is a 0.18 mu m process NMOS tube of a foundry, and the size is 0.22 mu m/0.18 mu m. First, based on TCAD of company b, three-dimensional structure modeling is performed on the NMOS device, as shown in fig. 7. After modeling is completed, the structure is subjected to electrical characteristic simulation in an irradiation-free state, a current-voltage curve is obtained, and calibration is performed according to SPICE simulation data to determine that the model can be used for subsequent total dose effect simulation.
And after the model calibration is completed, performing TCAD total dose effect simulation. Setting the bias state of the device electrode to be on during irradiation, and setting the bias state of the device to be V after irradiation D ＝0.1V，V G Scan from 0 to 1.8V. Setting irradiation dose rate and different simulation time, realizing the total dose change range of 100-500 krad, and finally obtaining delta I under different total doses D The curve is shown in fig. 8.
Next to Δi D Modeling is performed. In the weak inversion region, ΔI is fitted using a double exponential function D As shown in formula (6); in the strong inversion region, a linear function fit is used, as shown in equation (7); a straight line fit is used in the velocity saturation region as shown in equation (8).
ΔI D,wi (V GS )＝k 1 exp(k 2 V GS )+k 3 exp(k 4 V GS ) (6)
ΔI D,si (V GS )＝k 5 V GS +k 6 (7)
ΔI D,vs (V GS )＝k 7 (8)
After fitting is completed, modeling parameter k 1 -k 7 Relation to total dose, parameter k 1 -k 7 Is considered as a function of total dose as in equation (9).
k i ＝f i (D) (9)
Wherein k is 1 、k 2 、k 3 Exponentially related to total dose, k 4 、k 6 、k 7 As a linear function of the total dose, k 5 Taking a constant. The modeling relationship of the parameter k to the total dose is shown in formulas (10) - (17).
k 1 ＝1.059×10 -8 exp(0.0068D) (10)
k 2 ＝-175.4exp(-0.01582D) (11)
k 3 ＝1.737×10 -10 exp(0.007414D) (13)
k 4 ＝-0.0124D+17.97 (14)
k 5 ＝1.4593×10 -6 (15)
k 6 ＝7.312×10 -12 D 2 -2.608×10 -9 D (16)
k 7 ＝3.43×10 -9 D+5.688×10 -8 (17)
Wherein k in formula (15) 5 The value of k is the k under different total doses 5 And (5) an average value.
For DeltaI D After modeling is completed, the model is described in Verilog-A and added to a simulator for circuit simulation call. As shown in fig. 9, the Verilog-a model includes three terminals connected to the gate, drain, and source of the MOS transistor. The model obtains NMOS tube V GS Voltage calculation to obtain delta I D As shown in fig. 10. Will be DeltaI D And the current is applied to the source and drain ends of the MOS tube to realize the parallel connection of the current, and finally the irradiated leakage current is obtained as shown in figure 4.
Claims (3)
1. A method for modeling total dose radiation-induced leakage current of a MOS transistor, comprising the steps of:
step 1: acquiring current and voltage data before and after total dose irradiation and under different total doses;
step 2: i at different total doses D -V GS Data and unirradiated I D -V GS The curve data are subjected to difference to obtain I caused by total dose effect D -V GS Curve change Δi D As in formula (1):
I D (rad)＝I D (prerad)+ΔI D (1)
wherein DeltaI D I caused by the total dose effect D -V GS Curve change, I D (prerad) is the leakage current before irradiation, I D (rad) is the leakage current after irradiation;
step 3: delta I is calculated according to a semiconductor physical model D Dividing into a weak inversion region, a strong inversion region and a velocity saturation region for modeling, and I D -V GS The formulas are shown as (2), (3) and (4) respectively;
wherein I is DSwi Representing the current in the weak inversion region of the transistor, I DSsi Represents the current in the strong inversion region of the transistor, u represents the carrier mobility, I DSvs Representing transistor speed saturation region current, V GS Is the gate-source voltage, V T As the threshold voltage of the power supply is set,representing the transition point of the weak inversion region and the strong inversion region,>indicating the transition point of the strong inversion region and the velocity saturation region, the factor n being dependent on the bias voltage, +.>Between 70mV and 80mV, v sat At saturation rate, C ox Capacitance of gate oxide layer per unit area, μ is mobility, W, L represents device size, I D0 As characteristic current, nkT/q represents a scale factor, k is Boltzmann constant, and q is electron quantity;
for DeltaI D Is approximated in a weak inversion region with a double-exponential model; approximation is carried out in a strong inversion region by a primary function model; taking ΔI in the velocity saturation region D An average value in the region;
step 4: ΔI D After modeling is complete, ΔI is performed in a spectrum simulation environment D The model is described by Verilog-A and ΔI D A current source, considered to be controlled by the gate-source voltage and the total dose, is connected in parallel with the transistor;
step 5: adding the MOS tube current and the current source current to represent the leakage current after total dose irradiation, and realizing total dose effect leakage current simulation based on a reduced model in spectrum;
step 6: performing error analysis; i in a computing spectrum simulator D -V GS Curve and corresponding irradiation dose TCAD I D -V GS Error of curve, if the error is within the allowable range, then receiving delta I D Modeling; otherwise, repeating the fitting process, correcting fitting parameters of the weak inversion region, the strong inversion region and the speed saturation, and carrying out modeling again.
2. The method for modeling total dose radiation induced leakage current of a MOS transistor according to claim 1, wherein the means for obtaining the current-voltage data in step 1 comprises TCAD total dose simulation or ground total dose experiment.
3. The method of modeling total dose radiation-induced leakage current of a MOS transistor of claim 1 wherein theIs typically 5L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311181831.9A CN117252137A (en) | 2023-09-14 | 2023-09-14 | Modeling method for total dose radiation induced leakage current of MOS transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311181831.9A CN117252137A (en) | 2023-09-14 | 2023-09-14 | Modeling method for total dose radiation induced leakage current of MOS transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117252137A true CN117252137A (en) | 2023-12-19 |
Family
ID=89130617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311181831.9A Pending CN117252137A (en) | 2023-09-14 | 2023-09-14 | Modeling method for total dose radiation induced leakage current of MOS transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117252137A (en) |
-
2023
- 2023-09-14 CN CN202311181831.9A patent/CN117252137A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Alexander | Transient ionizing radiation effects in devices and circuits | |
| CN101551831B (en) | A device modeling method in relation to total dose radiation | |
| CN106991201B (en) | Method for determining total dose model parameters of SOI MOSFET | |
| CN106446395B (en) | A kind of Analytic modeling method of NMOS total dose effects | |
| CN103198198A (en) | Single-event transient injection simulation method for high-frequency circuits | |
| CN113341761B (en) | Modeling method and system for total dose effect of CMOS digital integrated circuit | |
| CN106649920A (en) | IBIS-based integrated circuit total dose effect modeling method | |
| CN117252137A (en) | Modeling method for total dose radiation induced leakage current of MOS transistor | |
| Privat et al. | Simple and accurate single event charge collection macro modeling for circuit simulation | |
| Calienes et al. | Bulk and FDSOI SRAM resiliency to radiation effects | |
| Petrosyants et al. | Rad-hard versions of SPICE MOSFET models for effective simulation of SOI/SOS CMOS circuits taking into account radiation effects | |
| Petrosyants et al. | SOI/SOS MOSFET universal compact SPICE model with account for radiation effects | |
| Zimin et al. | Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures | |
| CN113591320B (en) | Coupling simulation method for hot carrier effect and total dose effect | |
| Wright | Physical and CAD models for the implanted-channel VLSI MOSFET | |
| Bennett et al. | Efficient method for estimating the characteristics of radiation-induced current transients | |
| Wu et al. | SP-SOI: A third generation surface potential based compact SOI MOSFET model | |
| Lyu et al. | Machine Learning Assisted Device Modeling with Process Variations for Advanced Technology | |
| Higashi et al. | Comprehensive understanding of random telegraph noise with | |
| Meinerzhagen et al. | Quasi-simultaneous solution method: A new highly efficient strategy for numerical MOST simulations | |
| Kobayashi et al. | Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET | |
| Rostand et al. | Unified SPICE Model for Transient Ionizing Radiation Response of SOI MOSFET | |
| Shvetsov-Shilovskiy et al. | Advanced system for CMOS SOI test structures measurements | |
| Chung et al. | A physically-based built-in spice poly-Si TFT model for circuit simulation and reliability evaluation | |
| Huang et al. | New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator MOSFETs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |