CN117248200A - CVD wafer reaction electric field generating mechanism - Google Patents
CVD wafer reaction electric field generating mechanism Download PDFInfo
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- CN117248200A CN117248200A CN202311516811.2A CN202311516811A CN117248200A CN 117248200 A CN117248200 A CN 117248200A CN 202311516811 A CN202311516811 A CN 202311516811A CN 117248200 A CN117248200 A CN 117248200A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 52
- 230000005684 electric field Effects 0.000 title claims abstract description 42
- 230000007246 mechanism Effects 0.000 title claims abstract description 32
- 230000017525 heat dissipation Effects 0.000 claims description 55
- 238000007789 sealing Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 239000012495 reaction gas Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 7
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- 238000012423 maintenance Methods 0.000 description 5
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 210000005069 ears Anatomy 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
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- 239000004020 conductor Substances 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
The application discloses a CVD wafer reaction electric field generating mechanism, which comprises a second operation plate and a power supply device, wherein the second operation plate is electrified through the power supply device and is used as an electric field generator and can construct an electric field so as to promote vapor deposition reaction; the power supply device comprises a power supply, a conductive strip, a first conductive block, a second conductive block and a conductive sheet, wherein the power supply supplies power, and current acts on the second operation plate through the conductive strip, the first conductive block, the second conductive block and the conductive sheet; the contact end of one of the first conductive block and the second conductive block is arranged in a convex shape, and the contact end of the other conductive block is arranged in a concave shape; the second operation plate is provided with a containing groove, and the conducting strip is positioned in the containing groove; through setting up conducting strip, first conducting block, second conducting block and conducting strip, both adapted the structure that opens and shuts of box and lid, improved equipment safety, made things convenient for the equipment of electrically conductive structure and box again, still guaranteed the electrically conductive effect of electrically conductive structure and the contact of second operation board.
Description
Technical Field
The application relates to the technical field of wafer chemical vapor deposition equipment, in particular to a CVD wafer reaction electric field generating mechanism.
Background
Chemical vapor deposition (Chemical Vapor Deposition) refers to a process of synthesizing a coating or nanomaterial by reacting a chemical gas or vapor at the surface of a substrate. CVD is currently a deposition technique that is widely used in the semiconductor industry.
The CVD method for preparing the film comprises the following steps: the reaction gas diffuses toward the surface of the substrate and is adsorbed on the surface of the substrate, the reaction gas generates chemical reaction on the surface of the substrate, gas phase byproducts generated on the surface of the substrate are separated, diffuse into the space or are pumped away by a pumping system, and the non-volatile solid phase reaction products left on the surface of the substrate become an oxide film of the substrate.
In the CVD film plating process, the distribution uniformity, pressure and reaction temperature of the reaction gas on the surface of the wafer are important conditions for determining the film plating effect, and the addition of an electric field is beneficial to promoting the reaction, but the arrangement of the electric field also increases potential safety hazards.
The conventional electric field generating mechanism is usually arranged at the top of the reaction cavity, and generates an electromagnetic field from top to bottom directly during operation, so that the arranged electric field generating mechanism is difficult to match with a working chamber with a box body and a cover body, and the processing difficulty is increased during operations such as installation and maintenance.
Disclosure of Invention
The purpose of the application is to overcome the defects existing in the prior art and provide a CVD wafer reaction electric field generating mechanism.
To achieve the above technical object, the present application provides a CVD wafer reaction electric field generating mechanism, including: a second work plate; a power supply device for energizing the second work plate; the power supply device includes: a power supply; the conducting strip is arranged in the box body and is used for connecting a power supply; the first conductive block is arranged in the box body and extends to the top of the box body, and the first conductive block is detachably connected with the conductive strip; the second conductive block is arranged in the cover body and used for contacting the first conductive block, and the cover body is arranged on one side of the box body in a turnover manner; the conducting strip is detachably connected with the second conducting block; wherein, the contact end of one of the first conductive block and the second conductive block is set to be convex, the contact end of the other one is set to be concave, and when the first conductive block and the second conductive block are contacted, the convex contact end can be inserted into the concave contact end; the second operation plate is provided with a containing groove, and the conducting strip is positioned in the containing groove and is contacted with the second operation plate; when the box is in operation, the box body is in sealing connection with the cover body, and the first conductive block is in contact with the second conductive block; the power supply supplies power, and current acts on the second operation plate through the conducting strip, the first conducting block, the second conducting block and the conducting sheet.
Further, the second operation plate is made of aluminum, and the surface of the second operation plate is anodized.
Further, the power supply is arranged outside the box body; the conductive strips extend horizontally; the first conductive block vertically extends, one end of the first conductive block is connected with the conductive strip, and the other end of the first conductive block passes through the box body to be exposed outwards; the second conductive block vertically extends, one end of the second conductive block is connected with the second operation plate, and one end of the second conductive block penetrates through the cover body to be exposed outwards.
Further, a first insulating block is arranged in the box body, and the conducting strip is arranged in the first insulating block; the box body is also internally provided with a second insulating block, and the first conductive block is arranged in the second insulating block; the cover body is internally provided with a third insulating block, and the second conductive block is arranged in the third insulating block.
Further, a V-shaped groove is formed in one end, close to the third insulating block, of the second insulating block, an annular frustum is arranged in one end, close to the second insulating block, of the third insulating block, and when the box body is in sealing connection with the cover body, the annular frustum is inserted into the V-shaped groove; and/or, one end of the third insulating block, which is far away from the second insulating block, is provided with a avoidance slot, the second conducting block is arranged in the avoidance slot, and the conducting strip is arranged above the avoidance slot and is opposite to the avoidance slot; and/or the first insulating block is fastened and connected with the box body through screws.
Further, one of the conductive strip and the first conductive block is provided with a threaded hole, and the other conductive strip and the first conductive block are provided with threaded sections which can be in threaded connection with the threaded hole; and/or the second conductive block is fixedly connected with the conductive sheet through a screw; and/or the conducting strip is fastened and connected with the second operation plate through screws.
Further, the CVD wafer reaction electric field generating mechanism also comprises an elastic piece; the second operation plate is provided with an elastic mounting hole which is used for mounting the elastic piece; one end of the elastic piece is connected with the second conductive block, and the other end of the elastic piece is connected with the second operation plate.
Further, a plurality of radiating channels which are radially arranged are arranged on one surface of the second operation plate away from the reaction cavity; a blade is arranged between any two adjacent heat dissipation channels, the blade is in a fan shape, a first auxiliary flow channel is arranged at the central shaft of the blade, and the first auxiliary flow channel radially extends and penetrates the blade and divides the blade into two branches; the central shaft of the turnout is also provided with a second auxiliary flow channel which extends radially and penetrates through the turnout.
Further, a heat dissipation hole is formed in the center of the second operation plate, and penetrates through the second operation plate along the thickness direction; and/or the periphery of the second operation plate is provided with a plurality of mounting lugs; and/or an air passage is arranged in the second operation plate, penetrates through the second operation plate and is used for circulating the reaction gas.
Further, the second operation plate is provided with a radiating hole and an air passage, and the air passage radially extends to be communicated with the radiating hole; and/or, the second operation plate is provided with a heat radiation hole, and the CVD wafer reaction electric field generating mechanism further comprises a heat radiation cover plate, wherein the heat radiation cover plate is used for covering the heat radiation hole.
The application provides a CVD wafer reaction electric field generating mechanism, which comprises a second operation plate and a power supply device, wherein the second operation plate is electrified through the power supply device and is used as an electric field generator and can construct an electric field so as to promote vapor deposition reaction; the power supply device comprises a power supply, a conductive strip, a first conductive block, a second conductive block and a conductive sheet, wherein the power supply supplies power, and current acts on the second operation plate through the conductive strip, the first conductive block, the second conductive block and the conductive sheet; the CVD wafer reaction electric field generating mechanism provided by the application has the following advantages:
the first conductive block and the second conductive block are arranged in the box body and the cover body respectively, so that the box body and the cover body can be opened and closed conveniently, and the safety operation requirements of closing the cover to conduct, uncovering and breaking the power can be met;
the contact end of one of the first conductive block and the second conductive block is convex, the contact end of the other one of the first conductive block and the second conductive block is concave, the contact area of the first conductive block and the second conductive block can be increased by the concave-convex arc arrangement, current flow is facilitated, after the convex end part is sunk into the concave end part, the concave end part has a certain limiting effect on the convex end part, relative displacement of the first conductive block and the second conductive block can be blocked, and stability and reliability of electric field generation are facilitated;
be equipped with the holding tank on the second operation board, the conducting strip is in the holding tank, sets up the holding tank, on the one hand, can restrict the mounted position of conducting strip to the accurate equipment of part, and can avoid the conducting strip displacement to break away from even, be favorable to the connection accuracy and the stability of part, on the other hand, can guarantee conducting strip and second operation board contact, thereby guarantee the electric current circulation.
Drawings
FIG. 1 is a schematic view of a CVD wafer coating apparatus according to the present application;
FIG. 2 is a schematic view of another angle structure of the plating apparatus shown in FIG. 1;
FIG. 3 is a sectional view showing the structure of the plating apparatus shown in FIG. 1;
FIG. 4 is a schematic view showing the construction of components in a working chamber of the plating apparatus shown in FIG. 1;
FIG. 5 is a cross-sectional view of a reactive electric field generating mechanism according to the present application;
fig. 6 is a schematic structural diagram of a second working plate provided in the present application.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
The application provides a CVD wafer coating equipment, includes: the wafer processing device comprises a working chamber 100, wherein a reaction cavity 101 is arranged in the working chamber 100, an inlet and an outlet 102 are formed in one side of the working chamber 100, and a wafer can enter or leave the reaction cavity 101 through the inlet and the outlet 102; the carrying mechanism 200 is used for supporting the wafer entering the reaction chamber 101.
In particular, the chamber 100 provides a relatively closed space for wafer plating to facilitate control of the plating environment. During operation, the wafer enters the reaction cavity 101 through the inlet and outlet 102, and the carrying mechanism 200 is used for taking the wafer and providing a stable operation position for the wafer; after coating, the wafer leaves the reaction chamber 101 through the inlet/outlet 102.
The CVD wafer coating equipment provided by the application further comprises: the first operation plate 310 is arranged above the reaction chamber 101, and air inlets 311 are densely distributed on the first operation plate 310; the second operation plate 320 is arranged on the first operation plate 310, an auxiliary cavity 312 is arranged between the first operation plate 310 and the second operation plate 320, an air passage 320a is arranged in the second operation plate 320, and the air passage 320a is communicated with the auxiliary cavity 312; the gas supply device 400 is communicated with the gas channel 320a, and the reaction gas can enter the auxiliary cavity 312 through the gas channel 320a and then enter the reaction cavity 101 through the gas inlet hole 311.
Specifically, the first working plate 310 and the second working plate 320 are both disposed in the working chamber 100 and suspended above the carrying mechanism 200; the auxiliary chamber 312 between the first work plate 310 and the second work plate 320 is a relatively sealed chamber; during operation, the reaction gas enters the auxiliary cavity 312 through the air passage 320a, and can spread in the auxiliary cavity 312 to further fill the auxiliary cavity 312, so that the reaction gas can uniformly flow and relatively uniformly enter each air inlet hole 311, and the densely distributed air inlet holes 311 are also beneficial to the reaction gas to uniformly enter the reaction cavity 101 and act on the wafer, so that the uniformity of the wafer coating film is ensured.
The CVD wafer coating equipment provided by the application further comprises: a power supply device 500 for energizing the second work plate 320; and an evacuation device 600 for evacuating the gas in the reaction chamber 101.
The second work plate 320 is energized by the power supply device 500, and the second work plate 320 serves as an electric field generator, and an electric field is established by the second work plate 320, whereby a plating reaction can be promoted.
By arranging the air extractor 600, the reaction chamber 101 can be vacuumized before operation, the plating environment can be controlled, the air pressure in the reaction chamber 101 can be regulated and controlled in the operation process, and the plating environment can be optimized.
The CVD wafer coating equipment provided by the application further comprises: a heat dissipation plate 330 disposed above the second work plate 320; the fan 340 is disposed above the heat dissipation plate 330.
By arranging the heat dissipation plate 330 above the second operation plate 320, after the second operation plate 320 generates heat, heat is preferentially transferred to the heat dissipation plate 330, the heat dissipation plate 330 is a plane plate with a larger area, and the heat on the heat dissipation plate 330 can be quickly transferred outwards; meanwhile, the heat dissipation plate 330 shields the second operation plate 320, and heat at all positions on the second operation plate 320 can be transferred to the heat dissipation plate 330, so that the temperature uniformity on the second operation plate 320 is ensured.
A fan 340 is further disposed above the heat dissipation plate 330, and the fan 340 is mainly used for dissipating heat in a space above the heat dissipation plate 330, so that the heat dissipation plate 330 dissipates heat upwards; at this time, the configuration of the fan 340 is not limited, and a small fan is generally disposed right above the center of the heat dissipation plate 330 to satisfy the heat dissipation requirement.
The design of the heat dissipation plate 330 increases the heat dissipation area, is beneficial to heat dissipation, and prevents the fan 340 from directly acting on the second operation plate 320, which is beneficial to reducing the heat dissipation strength and improving the heat dissipation uniformity.
The CVD wafer plating apparatus provided herein also includes a plurality of heating rods 350 distributed within the chamber 100.
It should be explained that the temperature is an important influencing factor of the wafer coating. By arranging the heating rods 350 in the working chamber 100, the temperature can be controlled at multiple positions, and the operation temperature in the reaction chamber 101 can be ensured; meanwhile, according to the reaction requirement, the independent temperature control can be carried out at the appointed position, so that the requirement of more various temperature control is met.
Referring to fig. 1 to 3, the present application provides a CVD wafer plating apparatus capable of controlling the pressure in a reaction chamber 101 and ensuring that a reaction gas uniformly acts on a wafer by a gas supply device 400, a first work plate 310, a second work plate 320, and a gas exhaust device 600; the temperature in the reaction chamber 101 can be controlled by the heat dissipation plate 330, the fan 340 and the heating rod 350, so that the wafer can be ensured to react at a required temperature. The CVD wafer coating equipment provided by the application integrates mechanisms such as air control, temperature control and electric field generation and the like efficiently, can effectively and reliably construct the environment required by wafer vapor deposition coating, improves the coating efficiency and optimizes the coating effect.
To facilitate assembly and later maintenance of the mechanisms, in one embodiment, the working chamber 100 is configured as a split structure, with the split portions being removable or relatively movable.
For example, the working chamber 100 includes: a case 110, a reaction chamber 101 formed in the case 110; the cover 120 is provided on one side of the case 110 in a reversible manner, and is used for closing the reaction chamber 101. The split design is easier to model, install and maintain subsequently.
The application also provides a CVD wafer reaction electric field generating mechanism, comprising: a second work plate 320; and a power supply device 500 for supplying power to the second work plate 320. By energizing the second work plate 320 by the power supply device 500, the second work plate 320 functions as an electric field generator, and an electric field can be built up to promote the vapor deposition reaction.
Specifically, the power supply device 500 includes a power source 510 and a conductive structure, the power source 510 being provided outside the working chamber 100 for easy installation and maintenance; the conductive structure is connected to the power source 510 and inserted into the working chamber 100 to be connected to the second work plate 320.
The conductive structure is made of conductive materials (such as copper and other metal materials), and can be arranged in a linear shape or in a block, rod or other configuration.
In one embodiment, the working chamber 100 includes a case 110 and a cover 120, the top of the case 110 is open, and the cover 120 is disposed on one side of the case 110 in a reversible manner, for shielding the top opening of the case 110; the power supply 510 is disposed on one side of the case 110, and the second operation plate 320 is disposed in the cover 120. The conductive structure includes: a conductive strip 520 disposed in the case 110 for connecting to the power source 510; the first conductive block 530 is arranged in the box 110 and extends to the top of the box 110, and the first conductive block 530 is detachably connected with the conductive strip 520; the second conductive block 540 is disposed in the cover 120 and is used for contacting the first conductive block 530, and the cover 120 is disposed on one side of the case 110 in a reversible manner; a conductive sheet 550 detachably connected to the second conductive block 540; in operation, the case 110 is hermetically connected to the cover 120, and the first conductive block 530 contacts the second conductive block 540; the power source 510 supplies power, and current is applied to the second work plate 320 through the conductive strip 520, the first conductive block 530, the second conductive block 540, and the conductive sheet 550.
Referring specifically to fig. 5, in the illustrated embodiment, a power supply 510 is disposed at one side of the case 110 and is hidden inside the protection case; one end of the conductive strip 520 is connected with the power supply 510, and the other end of the conductive strip extends into the box 110; one end of the first conductive block 530 is connected to the conductive strip 520, and the other end extends upward to be connected to the second conductive block 540; the second conductive block 540 is disposed in the cover 120, one end of the second conductive block 540 is exposed to the outside for connecting the first conductive block 530, and the other end of the second conductive block 540 extends into the cover 120 and is connected with the conductive sheet 550; the conductive sheet 550 contacts the second work plate 320.
Wherein, the conductive strip 520, the first conductive block 530, the second conductive block 540 and the conductive sheet 550 are all made of conductive materials. The box 110 is in sealing connection with the cover 120, the first conductive block 530 contacts the second conductive block 540, the power supply 510 supplies power, and current acts on the second operation plate 320 through the conductive strip 520, the first conductive block 530, the second conductive block 540 and the conductive sheet 550; the cover 120 is far away from the case 110, and the first conductive block 530 is separated from the second conductive block 540, at this time, even if the power supply 510 is not normally powered off, the first conductive block 530 and the second conductive block 540 can block the occurrence of the electric field due to the current path being cut off, thereby ensuring the operation safety.
It should be noted that, the conductive strip 520 and the first conductive block 530 are disposed in the wall of the case 110, so that the wall of the case 110 needs to be perforated for easy installation, and one end of the hole needs to be ensured to be capable of being connected to the power source 510, and the other end of the hole needs to be capable of being connected to the second conductive block 540. If only one conductive block is provided, the conductive block is necessarily required to be obliquely arranged, but the oblique installation of the conductive block is inconvenient for opening holes in the case 110, and special configuration design is needed to facilitate the connection of the conductive block with the power supply 510 and the second conductive block 540 at the same time.
The present application solves the problem of direction changing required for connection and facilitates tapping and installation by distributing the conductive strip 520 and the first conductive block 530 inside the case 110.
Further, the first conductive block 530 is detachably connected to the conductive strip 520, which facilitates subsequent maintenance, repair, and component replacement.
Similarly, the conductive sheet 550 is detachably connected to the second conductive block 540, which also facilitates subsequent maintenance, repair, and replacement of components.
Alternatively, the contact end of one of the first conductive block 530 and the second conductive block 540 is provided as a convex shape, and the contact end of the other is provided as a concave shape, and the convex contact end can be inserted into the concave contact end when the first conductive block 530 and the second conductive block 540 are in contact.
Referring specifically to fig. 5, in the illustrated embodiment, the upper end of the first conductive block 530 is provided in a concave shape, and the lower end of the second conductive block 540 is provided in a convex shape, and as the cover 120 closes the case 110, the lower end of the second conductive block 540 can be sunk into the upper end of the first conductive block 530.
The concave-convex arc arrangement can increase the contact area of the first conductive block 530 and the second conductive block 540, which is beneficial to current flow; meanwhile, after the convex end is sunk into the concave end, the concave end has a certain limiting effect on the convex end, so that the relative displacement of the first conductive block 530 and the second conductive block 540 can be blocked, and the stability and the reliability of the electric field generation are facilitated.
Alternatively, the second working plate 320 is provided with a receiving groove 321, and the conductive sheet 550 is disposed in the receiving groove 321 and contacts the second working plate 320.
Referring to fig. 5 and 6 in combination, in the illustrated embodiment, the second working plate 320 is provided with a receiving groove 321 near the lower surface of the first working plate 310, and the conductive sheet 550 is embedded in the receiving groove 321 and is attached to the bottom of the receiving groove 321.
Offer the holding tank 321, on the one hand, can restrict the mounted position of conducting strip 550 to the accurate equipment of part, and can avoid conducting strip 550 displacement to break away from even, be favorable to the connection accuracy and the stability of part, on the other hand, can guarantee conducting strip 550 and second operation board 320 contact, thereby guarantee the electric current circulation.
In summary, by arranging the conductive strip 520, the first conductive block 530, the second conductive block 540 and the conductive sheet 550, the device adapts to the opening and closing structure of the case 110 and the cover 120, improves the safety of the device, facilitates the assembly of the conductive structure and the case 110, and ensures the contact conductive effect of the conductive structure and the second operation board 320.
Alternatively, the second work plate 320 is made of aluminum, and the surface of the second work plate 320 is anodized.
The aluminum material is easy to process and mold, has good hardness and low cost, has good conductivity, and can ensure the generation of an electric field. Through the anodic oxidation treatment, an oxide film can be formed on the surface of the second operation plate 320, and the oxide film can improve the surface state and performance of the second operation plate 320 so as to improve corrosion resistance, enhance wear resistance and hardness, control the thickness of the oxide film, and also play a role in surface insulation, thereby avoiding electric leakage of the second operation plate 320.
It should be added that the inside of the receiving groove 321 is not anodized to ensure that the current can be transferred to the second operation plate 320 through the conductive sheet 550 in the receiving groove 321. At this time, the recess design of the receiving groove 321 is also advantageous for the anodic oxidation treatment; in the process, the accommodating groove 321 is blocked or filled, and thus, after the process is completed, the oxide thin film of a predetermined thickness can be formed on the surface of the second work plate 320 except for the accommodating groove 321.
Optionally, the power source 510 is disposed outside the case 110; the conductive strip 520 extends horizontally; the first conductive block 530 extends vertically, one end of the first conductive block 530 is connected with the conductive strip 520, and the other end passes through the case 110 to be exposed to the outside; the second conductive block 540 extends vertically, and one end of the second conductive block 540 is connected to the second operation plate 320 and one end is exposed to the outside through the cover 120.
Referring specifically to fig. 5, in the illustrated embodiment, the cover 120 includes a mounting portion 120a for sealing connection with the case 110, and the first work plate 310 and the second work plate 320 are provided at the mounting portion 120a. The conductive strips 520 extend in the horizontal direction and are arranged in the wall of the box 110; the first conductive block 530 extends vertically, the lower end of the first conductive block 530 is connected with the conductive strip 520, and the upper end is exposed at the top end of the case 110; the second conductive block 540 extends vertically, the lower end of the first conductive block 530 is exposed at the bottom of the cover 120, and the upper end is connected with the second operation plate 320 through the mounting part 120a; the conductive sheet 550 is pressed between the second conductive block 540 and the second working plate 320; the second working plate 320 has a receiving groove 321 on a lower surface thereof, and the conductive sheet 550 is embedded in the receiving groove 321 and extends horizontally toward the second working plate 320. When the cover 120 and the case 110 are in a closed state, the first conductive block 530 contacts the second conductive block 540, and both vertically extend along a straight line; the conductive strips 520 and conductive tabs 550 extend horizontally inward to facilitate stable placement of the conductive structure within the walls of the working chamber 100.
Optionally, a first insulating block 561 is disposed in the case 110, and the conductive strip 520 is disposed in the first insulating block 561; the box 110 is also provided with a second insulating block 562, and the first conductive block 530 is arranged in the second insulating block 562; the cover 120 is provided with a third insulating block 563 therein, and the second conductive block 540 is disposed in the third insulating block 563.
Wherein, the first insulating block 561, the second insulating block 562 and the third insulating block 563 are all made of insulating materials (such as plastics, ceramics, etc.), and the conductive strips 520, the first conductive block 530 and the second conductive block 540 are arranged in the insulating blocks, so that on one hand, electric leakage of the outer wall of the working chamber 100 when the box body 110 and the cover body 120 are made of metal materials can be avoided, and on the other hand, the insulating materials have a certain heat insulation effect, and deformation or overhigh temperature of the box body 110 and the cover body 120 caused by energizing and heating can be avoided. The shapes of the conductive strip 520, the first conductive block 530 and the second conductive block 540 are matched with the insulating block, and the conductive structure is tightly matched with the insulating block, so that the installation position of the conductive structure can be limited, and the stable operation of the conductive structure can be ensured.
In the embodiment shown in fig. 5, the first, second and third insulating blocks 561, 562 and 563 are each provided in a linear bearing configuration; holes for accommodating the insulating blocks are formed in the case 110 and the cover 120; the insulating block is tightly matched with the hole, or the insulating block is welded in the hole, or the insulating block is fastened in the hole through a screw; assembling the conductive strip 520, the first conductive block 530 and the second conductive block 540 in the corresponding insulating blocks; the insulating block wraps the conductive structure, and can effectively prevent the conductive structure from contacting the working chamber 100.
Optionally, a V-shaped groove is formed at one end of the second insulating block 562 adjacent to the third insulating block 563, and an annular frustum is formed at one end of the third insulating block 563 adjacent to the second insulating block 562, and is inserted into the V-shaped groove when the case 110 is in sealing connection with the cover 120.
Referring specifically to fig. 5, in the illustrated embodiment, a horizontal hole and a vertical hole are formed in the case 110, and the upper end of the vertical hole penetrates through the top of the case 110; the first insulating block 561 is installed in the horizontal hole, and the second insulating block 562 is installed in the vertical hole; the upper end of the second insulating block 562 is exposed outwards through a vertical hole, a V-shaped groove is formed in the inner wall of the upper end of the second insulating block 562, the V-shaped groove is communicated with the internal channel of the second insulating block 562, and the first conductive block 530 is exposed outwards through the V-shaped groove; by providing the V-shaped groove, the upper end of the second insulating block 562 is horn-shaped to contract downward.
With continued reference to fig. 5, a vertical through hole is provided in the mounting portion 120a of the cover 120, and the third insulating block 563 is provided in the vertical through hole; the lower end of the third insulating block 563 is exposed to the outside through the vertical through hole; the inner wall of the lower end of the third insulating block 563 is provided with an annular frustum, the shape of the annular frustum is adapted to the V-shaped groove, and the smaller the outer diameter of the annular frustum is; the annular frustum protrudes from the mounting portion 120a, and is inserted into the V-shaped groove when the case 110 and the cover 120 are closed.
The insertion design of the annular frustum and the V-shaped groove can guide the second conductive block 540 to contact the first conductive block 530, and can also prevent the contacted first conductive block 530 and the contacted second conductive block 540 from relatively displacing.
Optionally, a space-avoiding groove is formed at one end of the third insulating block 563 away from the second insulating block 562, the second conductive block 540 is disposed in the space-avoiding groove, and the conductive sheet 550 is disposed above the space-avoiding groove and faces the space-avoiding groove.
Referring specifically to fig. 5, in the illustrated embodiment, the third insulating block 563 includes an insertion section 563a and a slot section 563b, a vertical through hole is provided in the mounting portion 120a, the insertion section 563a is inserted into the vertical through hole, and the slot section 563b abuts against the mounting portion 120a from top to bottom; the surface of the slot section 563b far away from the mounting part 120a is provided with a clearance slot, a conductive block mounting hole is arranged in the clearance slot, and the conductive block mounting hole penetrates through the insertion section 563a; the second conductive block 540 is inserted into the conductive block mounting hole; the lower extreme of second conductive piece 540 is arranged in connecting first conductive piece 530, upper end and is in the clearance groove, and the clearance groove can protect second conductive piece 540, can also avoid second conductive piece 540 to expose, exist the electric leakage risk above installation department 120a.
Referring to fig. 4 in combination, the outer periphery of the second work plate 320 is provided with a mounting lug 329 for connection with the mounting portion 120a so as to fasten the second work plate 320 to the mounting portion 120a; one of the mounting ears 329 presses against the channel section 563b, at which point the channel section 563b is capable of supporting the second work plate 320 and limiting the mounting height of the second work plate 320.
With continued reference to fig. 5, the mounting ear 329 presses against the slot segment 563b, shielding the clearance slot, with the second conductive block 540 and conductive tab 550 hidden between the clearance slot and the receiving slot 321; the conductive strip 520 and the first conductive block 530 are hidden in the case 110, and the whole conductive structure is hidden, which is advantageous for safety and beauty.
Alternatively, the first insulating block 561 is coupled to the case 110 by screw fastening.
Referring specifically to fig. 4, in the illustrated embodiment, the first insulating block 561 includes a head segment 561a and a column segment 561b, the head segment 561a having an outer diameter greater than the column segment 561b; the horizontal hole on the box 110 for installing the first insulating block 561 is a countersunk hole, and when the column section 561b penetrates into the horizontal hole, the head section 561a can abut against the step of the countersunk hole; screw holes are formed in the head section 561a and the steps; after the head section 561a abuts against the step, the screw holes on the head section 561a and the step are opposite, and the first insulating block 561 and the box 110 can be fastened by screwing in the screw.
The secure mounting facilitates the accuracy and stability of the mounting of the conductive strip 520.
Alternatively, one of the conductive strip 520 and the first conductive block 530 is provided with a threaded hole, and the other is provided with a threaded section, and the threaded section can be in threaded connection with the threaded hole.
Referring specifically to fig. 5, in the illustrated embodiment, the upper end of the conductive strip 520 is provided with a threaded hole, the lower end of the first conductive block 530 is provided with a threaded section, and the conductive strip 520 and the first conductive block 530 can be screwed with the threaded section through the threaded hole.
The threaded connection is beneficial to the reliability of the connection between the conductive strip 520 and the first conductive block 530, thereby ensuring the circulation of current and the structural stability of the equipment; the assembly and disassembly of the conductive strip 520 and the first conductive block 530 can be simplified, and the first conductive block 530 can be mounted or dismounted by a simple rotation.
In other embodiments, the conductive strip 520 and the first conductive block 530 can be detachably connected by splicing, plugging, or the like.
Optionally, the second conductive block 540 is connected to the conductive sheet 550 by screw fastening.
Referring to fig. 5 specifically, in the illustrated embodiment, the upper end of the second conductive block 540 is provided with a threaded hole, and the conductive sheet 550 is provided with a through hole, so that the through hole on the conductive sheet 550 is aligned with the threaded hole on the second conductive block 540, and the conductive sheet 550 and the second conductive block 540 can be fastened by screwing in a screw, and the connection between the conductive sheet 550 and the second conductive block 540 can be released by screwing out the screw.
In other embodiments, the detachable connection of the conductive sheet 550 and the second conductive block 540 can also be achieved by splicing, plugging, or the like.
Alternatively, the conductive sheet 550 is connected to the second work plate 320 by screw fastening.
Referring specifically to fig. 5, in the illustrated embodiment, the lower surface of the second work plate 320 is provided with a receiving groove 321, and the conductive sheet 550 is disposed in the receiving groove 321. A threaded hole is arranged on one side of the accommodating groove 321 far away from the second conductive block 540, and a through hole is arranged on the conductive sheet 550, so that the through hole on the conductive sheet 550 is aligned with the threaded hole on the accommodating groove 321, a screw is screwed in to fasten the conductive sheet 550 and the second operation plate 320, and the conductive sheet 550 is tightly attached to the second operation plate 320; the unscrewing of the screw in turn releases the conductive strip 550 from the second conductive block 540.
Optionally, the CVD wafer reaction electric field generating mechanism provided herein further includes an elastic member 571; the second work plate 320 is provided with an elastic mounting hole 322, and the elastic mounting hole 322 is used for mounting an elastic piece 571; one end of the elastic member 571 is connected to the second conductive block 540, and the other end is connected to the second operation plate 320.
The elastic member 571 may be an elastic structure such as a spring, or may be made of an elastic material such as rubber, and the elastic member 571 has elastic properties of deforming and recovering. The elastic member 571 is connected with the second conductive block 540 and the second working plate 320, and the elastic member 571 can press against the second conductive block 540, so that the second conductive block 540 abuts against the first conductive block 530, thereby ensuring connection reliability of the first conductive block 530 and the second conductive block 540.
The elastic mounting hole 322 is provided, so that the mounting position of the elastic piece 571 can be limited, the elastic piece 571 can be conveniently mounted, the deformation direction of the elastic piece 571 can be limited, and the elastic piece 571 can be ensured to downwards abut against the second conductive block 540 when in a compressed state.
Optionally, a plurality of heat dissipation channels 323 arranged radially are disposed on a surface of the second working plate 320 facing away from the reaction chamber 101; a vane 324 is arranged between any two adjacent heat dissipation channels 323, the vane 324 is in a fan shape, a first auxiliary flow channel 325 is arranged at the central shaft of the vane 324, and the first auxiliary flow channel 325 radially extends and penetrates the vane 324 and divides the vane 324 into two branches; the central axis of the turnout is also provided with a second auxiliary flow channel 326, and the second auxiliary flow channel 326 extends radially and penetrates the turnout.
Referring specifically to FIG. 6, a second work plate 320 having a dense arrangement of vanes 324 is provided; the fins 324 can effectively increase the heat dissipation area of the second work plate 320, and the heat dissipation channels 323 are arranged to facilitate air flow and improve heat exchange efficiency.
With continued reference to fig. 6, the main body of the second work plate 320 has a disk shape, and any heat dissipation channel 323 extends straight toward the center of the second work plate 320. Since the heat dissipation channel 323 is a linear channel, the vane 324 is substantially fan-shaped, and the larger the area of the vane 324 is, the farther from the center of the circle. To avoid heat accumulation at the part with larger area of the vane 324, a first auxiliary flow channel 325 is further arranged in the middle of the vane 324; the first auxiliary flow channel 325 can increase the heat dissipation area of the vane 324 and increase the airflow channel; the two branches of the first auxiliary flow channel 325 are also substantially fan-shaped, so that a second auxiliary flow channel 326 is further opened, and the area of the end of the vane 324 is reduced again, the heat dissipation area is increased, and the airflow channel is increased through the second auxiliary flow channel 326.
Optionally, a heat dissipation hole 327 is disposed at the center of the second working plate 320, and the heat dissipation hole 327 penetrates the second working plate 320 along the thickness direction.
Referring to fig. 6 specifically, in the illustrated embodiment, the main body of the second working plate 320 is disc-shaped, and the center of the second working plate 320 is provided with a heat dissipation hole 327, so that heat accumulation in the central portion of the second working plate 320 can be avoided due to the heat dissipation hole 327, which is beneficial to the temperature stability of the whole second working plate 320.
Optionally, a plurality of mounting ears 329 are provided on the outer periphery of the second work plate 320.
The mounting tab 329 is adapted to be coupled to the mounting portion 120a so as to fix the second work plate 320 to the mounting portion 120a.
Referring specifically to fig. 4, in the illustrated embodiment, the second work plate 320 has four mounting ears 329 on the outer periphery, and holes are provided in the mounting ears 329. The mounting portion 120a is provided with a mounting post, the mounting post 329 is fitted around the mounting post through a hole in the mounting post, and the second work plate 320 is pressed against the first work plate 310 by pressing the mounting post 329 against the head of the mounting post.
Optionally, an air channel 320a is disposed in the second working plate 320, and the air channel 320a penetrates through the second working plate 320 for flowing the reaction gas.
Specifically, the gas channel 320a communicates with the gas supply device 400, and in operation, reactant gas enters the auxiliary chamber 312 through the gas channel 320 a.
Referring specifically to fig. 6, in the illustrated embodiment, the second working plate 320 is provided with a heat dissipation hole 327 and an air passage 320a, and the air passage 320a extends radially to communicate with the heat dissipation hole 327. At this time, the air duct 320a communicates with the air supply device 400 and the heat dissipation hole 327, and the heat dissipation hole 327 communicates with the auxiliary chamber 312. The hole diameter of the heat dissipation hole 327 is larger, the reaction gas flowing out through the gas passage 320a is flushed toward the heat dissipation hole 327, and the heat dissipation hole 327 can effectively guide the gas to flow in a dispersed manner so that the reaction gas fills the auxiliary cavity 312.
Optionally, the second working plate 320 is provided with a heat dissipation hole 327, and the cvd wafer reaction electric field generating mechanism further includes a heat dissipation cover 328, where the heat dissipation cover 328 is used to cover the heat dissipation hole 327.
Referring specifically to fig. 4, in the illustrated embodiment, a heat dissipating cover 328 is used to cover an end of the heat dissipating holes 327 away from the auxiliary chamber 312 to avoid the reaction gas from overflowing.
Optionally, the heat dissipating cover 328 is hermetically connected to the second work plate 320.
In the embodiment shown in fig. 3 and 4, the upper surface of the second work plate 320 is provided with a mounting groove provided around the heat radiation hole 327 for mounting a seal ring. The heat dissipation cover plate 328 and the second operation plate 320 are correspondingly provided with mounting holes, so that the mounting holes on the heat dissipation cover plate 328 and the second operation plate 320 are communicated, and the heat dissipation cover plate 328 and the second operation plate 320 can be fixed by inserting fasteners; the sealing ring is pressed between the heat dissipation cover plate 328 and the second operation plate 320, so that the tightness of the joint of the heat dissipation cover plate 328 and the second operation plate 320 can be effectively ensured.
Optionally, the bottom of the second working plate 320 near the first working plate 310 is provided with a groove, and the top of the first working plate 310 near the second working plate 320 is also provided with a groove; when the second working plate 320 is disposed above the first working plate 310, the grooves of the two are opposite to each other to form the auxiliary cavity 312.
Optionally, the second work plate 320 is sealingly connected to the first work plate 310.
The foregoing examples represent only a few embodiments of the present application, which are described in more detail and are not thereby to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A CVD wafer reaction electric field generating mechanism, comprising:
a second work plate (320);
-a power supply device (500) for energizing said second work plate (320); the power supply device (500) includes:
a power supply (510);
a conductive strip (520) disposed in the case (110) and connected to the power supply (510);
a first conductive block (530) disposed in the case (110) and extending to a top of the case (110), the first conductive block (530) being detachably connected to the conductive strip (520);
the second conductive block (540) is arranged in the cover body (120) and is used for contacting the first conductive block (530), and the cover body (120) is arranged on one side of the box body (110) in a reversible manner;
a conductive sheet (550) detachably connected to the second conductive block (540);
wherein a contact end of one of the first conductive block (530) and the second conductive block (540) is provided with a convex shape, and a contact end of the other is provided with a concave shape, and the convex contact end can be inserted into the concave contact end when the first conductive block (530) and the second conductive block (540) are contacted;
the second operation plate (320) is provided with a containing groove (321), and the conducting strip (550) is positioned in the containing groove (321) and contacts the second operation plate (320);
when the box body (110) is in operation, the box body is in sealing connection with the cover body (120), and the first conductive block (530) is in contact with the second conductive block (540);
the power supply (510) supplies power, and current acts on the second work plate (320) through the conductive strip (520), the first conductive block (530), the second conductive block (540) and the conductive sheet (550).
2. The CVD wafer reaction electric field generating mechanism according to claim 1, wherein the second working plate (320) is made of aluminum material, and a surface of the second working plate (320) is anodized.
3. The CVD wafer reaction electric field generating mechanism of claim 1, wherein the power source (510) is disposed outside the housing (110);
the conductive strip (520) extends horizontally;
the first conductive block (530) vertically extends, one end of the first conductive block (530) is connected with the conductive strip (520), and the other end of the first conductive block passes through the box body (110) to be exposed outwards;
the second conductive block (540) extends vertically, one end of the second conductive block (540) is connected with the second operation plate (320), and one end of the second conductive block passes through the cover body (120) to be exposed outwards.
4. The CVD wafer reaction electric field generating mechanism according to claim 1, wherein a first insulating block (561) is provided inside the housing (110), the conductive strip (520) being provided in the first insulating block (561);
a second insulating block (562) is further arranged in the box body (110), and the first conductive block (530) is arranged in the second insulating block (562);
a third insulating block (563) is arranged in the cover body (120), and the second conductive block (540) is arranged in the third insulating block (563).
5. The CVD wafer reaction electric field generating mechanism according to claim 4, wherein a V-shaped groove is provided at an end of the second insulating block (562) adjacent to the third insulating block (563), an annular frustum is provided at an end of the third insulating block (563) adjacent to the second insulating block (562), and the annular frustum is inserted into the V-shaped groove when the case (110) is hermetically connected to the cover (120);
and/or, a clearance groove is formed in one end, far away from the second insulating block (562), of the third insulating block (563), the second conductive block (540) is arranged in the clearance groove, and the conductive sheet (550) is arranged above the clearance groove and faces the clearance groove;
and/or the first insulating block (561) is connected with the box body (110) through screw fastening.
6. The CVD wafer reaction electric field generating mechanism according to claim 1, wherein one of the conductive strip (520) and the first conductive block (530) is provided with a threaded hole, the other is provided with a threaded section, the threaded section being threadably connectable with the threaded hole;
and/or the second conductive block (540) is connected with the conductive sheet (550) through screw fastening;
and/or the conductive sheet (550) is connected with the second operation plate (320) through screw fastening.
7. The CVD wafer reaction electric field generating mechanism of claim 1, further comprising a resilient member (571);
an elastic mounting hole (322) is formed in the second working plate (320), and the elastic mounting hole (322) is used for mounting the elastic piece (571);
one end of the elastic piece (571) is connected with the second conductive block (540), and the other end of the elastic piece is connected with the second operation plate (320).
8. The CVD wafer reaction electric field generating mechanism according to claim 1, wherein a plurality of heat dissipation channels (323) are provided radially on a side of the second work plate (320) facing away from the reaction chamber (101);
a vane (324) is arranged between any two adjacent heat dissipation channels (323), the vane (324) is in a fan shape, a first auxiliary flow channel (325) is arranged at the central shaft of the vane (324), and the first auxiliary flow channel (325) radially extends and penetrates through the vane (324) and divides the vane (324) into two branches;
and a second auxiliary flow channel (326) is further arranged at the central shaft of the turnout, and the second auxiliary flow channel (326) radially extends and penetrates through the turnout.
9. The CVD wafer reaction electric field generating mechanism according to claim 1, wherein a heat dissipating hole (327) is provided at a center of the second working plate (320), the heat dissipating hole (327) penetrating the second working plate (320) in a thickness direction;
and/or, the periphery of the second operation plate (320) is provided with a plurality of mounting lugs (329);
and/or an air passage (320 a) is arranged in the second operation plate (320), and the air passage (320 a) penetrates through the second operation plate (320) and is used for allowing the reactant gas to circulate.
10. The CVD wafer reaction electric field generating mechanism of claim 9, wherein the second work plate (320) is provided with a heat dissipating hole (327) and an air passage (320 a), the air passage (320 a) extending radially to communicate with the heat dissipating hole (327);
and/or, the second operation plate (320) is provided with a heat dissipation hole (327), the CVD wafer reaction electric field generating mechanism further comprises a heat dissipation cover plate (328), and the heat dissipation cover plate (328) is used for covering the heat dissipation hole (327).
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| CN202311516811.2A CN117248200B (en) | 2023-11-15 | 2023-11-15 | CVD wafer reaction electric field generating mechanism |
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| CN202311516811.2A CN117248200B (en) | 2023-11-15 | 2023-11-15 | CVD wafer reaction electric field generating mechanism |
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| CN117248200B CN117248200B (en) | 2024-04-12 |
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| CN115987001A (en) * | 2021-10-14 | 2023-04-18 | 索恩格汽车部件（中国）有限公司 | Wiring sub-assembly, terminal box and motor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06112168A (en) * | 1992-09-29 | 1994-04-22 | Tokyo Electron Ltd | Plasma apparatus |
| JPH10172794A (en) * | 1996-12-09 | 1998-06-26 | Kokusai Electric Co Ltd | Plasma processing device |
| JP2003077848A (en) * | 2001-09-06 | 2003-03-14 | Hitachi Kokusai Electric Inc | Substrate-processing apparatus |
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| CN115987001A (en) * | 2021-10-14 | 2023-04-18 | 索恩格汽车部件（中国）有限公司 | Wiring sub-assembly, terminal box and motor |
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| CN117248200B (en) | 2024-04-12 |
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