CN111640690A - Upper electrode uncovering structure and semiconductor processing equipment - Google Patents
Upper electrode uncovering structure and semiconductor processing equipment Download PDFInfo
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- CN111640690A CN111640690A CN201910157358.8A CN201910157358A CN111640690A CN 111640690 A CN111640690 A CN 111640690A CN 201910157358 A CN201910157358 A CN 201910157358A CN 111640690 A CN111640690 A CN 111640690A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses an upper electrode uncovering structure and semiconductor processing equipment. The uncovering structure comprises a first lifting mechanism, the first lifting mechanism is positioned below the upper electrode, and the first lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset first lifting stage and keep the whole upper electrode in a horizontal state, so that the upper electrode is switched between a process position and an initial uncovering position; the second lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset second lifting stage so as to switch the upper electrode between the initial uncovering position and the target uncovering position; the initial decap position is between the process position and the target decap position. The conductive function of the inductive coil can be obviously improved, the good electrical conduction between the upper electrode and the cavity can be effectively ensured, meanwhile, the radio frequency leakage can be avoided, and the process result is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to an upper electrode uncovering structure and semiconductor processing equipment.
Background
The PSS etcher process module is composed of an upper electrode and a lower electrode, the upper electrode is mainly composed of an upper matcher, a coil system and a quartz cover, the lower electrode is mainly composed of components such as a lower matcher and a chuck, the upper electrode enables introduced process gas to be ionized by loading certain power in the process, then a wafer placed on the lower electrode chuck is bombarded, a large number of byproducts can be generated after the wafer is bombarded by the ions, most of the byproducts can be pumped to a plant tail gas treatment device through a molecular pump by a dry pump, but part of the byproducts can be attached to a chamber and the quartz cover, adverse effects can be generated on the process when the byproducts are accumulated to a certain degree, and therefore cleaning treatment of the interior of the chamber needs to be performed regularly.
When cleaning the chamber, the upper electrode needs to be lifted by the cover opening mechanism, and after cleaning is finished, the upper electrode falls on the chamber by the cover opening mechanism. The weight of the upper electrode is about 180Kg, the bottom of the cover opening mechanism is fixed on the chamber, the sliding part is connected with the upper electrode, the upper electrode is lifted to a single-point acting force, and therefore, one side of the upper electrode, which is far away from the cover opening mechanism, can generate vertical downward displacement under the action of gravity, which is called as a 'lap'. Need fall on the cavity through mechanism of uncapping after the cavity clearance is accomplished, nevertheless because "lap" phenomenon exists, keep away from uncapping mechanism one side upper electrode can earlier with cavity upper surface contact, thereby lead to the upper electrode bottom to produce transverse force with the induced electricity coil of cavity contact, make induced electricity coil produce deformation, it can seriously influence induced electricity coil conductive function to accumulate deformation many times, cause upper electrode and cavity can't well switch on, the radio frequency can appear in the clearance department of upper electrode and cavity contact surface simultaneously and reveal, and then influence the technology result.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides an upper electrode uncovering structure, a process chamber and semiconductor processing equipment.
In order to achieve the above object, a first aspect of the present invention provides an upper electrode opening cover structure, including:
the first lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset first lifting stage and keep the whole upper electrode in a horizontal state, so that the upper electrode is switched between a process position and an initial uncovering position;
the second lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset second lifting stage so as to switch the upper electrode between the initial uncovering position and the target uncovering position; wherein the content of the first and second substances,
the initial decap position is between the process position and the target decap position.
Optionally, the uncovering structure comprises a plurality of first lifting mechanisms, the plurality of first lifting mechanisms correspond to the edge area of the upper electrode, and the plurality of first lifting mechanisms are symmetrically arranged relative to the center of the upper electrode.
Optionally, the first lifting mechanism includes a lifting cylinder, and a piston rod of the lifting cylinder can abut against the lower surface of the upper electrode to drive the upper electrode to lift.
Optionally, the first lifting mechanism further includes an elastic buffer assembly, and the elastic buffer assembly is clamped between the piston rod and the lower surface of the upper electrode.
Optionally, the elastic buffer assembly includes a first mounting seat, an elastic element, a buffer element, and a second mounting seat;
the first mounting seat is fixedly arranged at the end part of the piston rod facing the upper electrode;
the second mounting seat is fixedly arranged at the end part of the first mounting seat facing the upper electrode;
the buffer piece is fixedly arranged in the second mounting seat, and penetrates out of the second mounting seat towards the direction close to the upper electrode.
The elastic piece is arranged in the first mounting seat, and two ends of the elastic piece are respectively abutted to the piston rod and the buffer piece.
Optionally, the second lifting mechanism comprises a cover opening assembly, a cover opening connecting piece, a connecting shaft, a sliding piece and an upper electrode connecting piece; wherein the content of the first and second substances,
the cover opening connecting piece is connected with the cover opening assembly and provided with a mounting hole, and the connecting shaft is arranged in the mounting hole in a penetrating manner;
the sliding piece is slidably sleeved on the outer side of the connecting shaft;
the upper electrode connecting piece is respectively connected with the upper electrode and the sliding piece.
Optionally, the uncovering connecting piece comprises a first connecting portion and two second connecting portions extending from the upper end and the lower end of the first connecting portion to the direction close to the sliding member respectively, each of the two second connecting portions is provided with one mounting hole, the two mounting holes are coaxially arranged, and the connecting shaft penetrates through the two mounting holes simultaneously.
Optionally, the lifting distance of the first lifting mechanism in the vertical direction is smaller than the lifting distance of the sliding piece along the connecting shaft.
In a second aspect of the present invention, there is provided a semiconductor processing apparatus comprising a chamber, an upper electrode at the top of the chamber, and a lower electrode at the bottom of the chamber, the semiconductor processing apparatus further comprising the above-mentioned uncapping structure.
Optionally, the chamber includes a first chamber and a second chamber stacked in sequence, and the upper electrode is detachably connected to the first chamber;
and mounting grooves are formed in the corner positions of the first chamber, and one first lifting mechanism is accommodated in each mounting groove.
The invention provides an upper electrode uncovering structure and a semiconductor processing device. The first lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset first lifting stage and keep the whole upper electrode in a horizontal state, so that the upper electrode is switched between a process position and an initial uncovering position; the second lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset second lifting stage so as to switch the upper electrode between the initial uncovering position and the target uncovering position; the initial decap position is between the process position and the target decap position. Therefore, the upper electrode can be driven by the uniform upward driving force of the first lifting mechanism in the first lifting stage, and the electric induction coil on the bottom surface of the upper electrode bounces along the vertical compression direction of the electric induction coil and cannot be subjected to transverse acting force, so that the electric induction coil is free of transverse abrasion. When the second lifting stage of the upper electrode, one end of the upper electrode, which is deviated, can be lapped on the first lifting mechanism, and the transverse acting force generated by the dielectric coil due to the contact of the upper electrode and the cavity can also be avoided, so that the conductive function of the dielectric coil can be obviously improved, the good electrical conduction of the upper electrode and the cavity can be effectively ensured, meanwhile, the sealing performance of the contact surface of the upper electrode and the cavity can also be effectively ensured, the radio frequency leakage is avoided, and the process result is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of a semiconductor processing apparatus according to a first embodiment of the present invention;
FIG. 2 is a top view of the semiconductor processing apparatus shown in FIG. 1 with the upper electrode removed;
FIG. 3 is a schematic structural diagram illustrating a first lifting mechanism for lifting the upper electrode according to a second embodiment of the present invention;
FIG. 4 is a schematic structural view illustrating the second lifting mechanism lifting the upper electrode according to the third embodiment of the present invention;
FIG. 5 is a top view of FIG. 4;
FIG. 6 is a schematic structural view of a chamber according to a fourth embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a first lifting mechanism according to a fifth embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a second lifting mechanism according to a sixth embodiment of the present invention;
FIG. 9 is a schematic diagram illustrating the distance that a sliding member of the second lifting mechanism can be lifted according to the seventh embodiment of the present invention;
fig. 10 is a schematic diagram illustrating the lifting distance between the first lifting mechanism and the second lifting mechanism according to the eighth embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Referring to fig. 1 and 2, a semiconductor processing apparatus 200, the semiconductor processing apparatus 200 includes a chamber 210, an upper electrode 220 disposed at a top of the chamber 210, a lower electrode (not shown) disposed at a bottom of the chamber 210, and a lid opening structure 100. An inductive coil (not shown) is disposed between the upper electrode 220 and the top of the chamber 210; the inductive coil is connected to the bottom of the upper electrode 220, is lifted and lowered together with the upper electrode 220 when the cover is opened, or is connected to the top of the chamber 210. The door opening structure 100 includes a first lifting mechanism 110 and a second lifting mechanism 120, as shown in fig. 1 and 2, the door opening structure 100 may include, but is not limited to, four first lifting mechanisms 110, the four first lifting mechanisms 110 are located below the upper electrode 220, and the four first lifting mechanisms 110 can independently drive the upper electrode 220 to lift in the vertical direction in a predetermined first lifting stage, so that the upper electrode 220 maintains an overall horizontal state while switching between the process position and the initial door opening position. As shown in fig. 1, the second lifting mechanism 120 is located at a side of the upper electrode 220 and connected to the upper electrode 220, and the second lifting mechanism 120 can independently drive the upper electrode 220 to lift in the vertical direction in a predetermined second lifting stage, so that the upper electrode 220 is switched between an initial uncapping position and a target uncapping position, wherein the initial uncapping position is located between the process position and the target uncapping position.
The uncapping phase of the upper electrode 220 includes a first lifting phase and a second lifting phase, which are explained below:
rise phase in the first rise phase:
as shown in fig. 3, at this stage, the first lifting mechanism 110 under the upper electrode 220 drives the upper electrode 220 to lift from the process position (the process position refers to the position of the upper electrode 220 during the process, i.e. the position of the upper electrode 220 when being hermetically connected to the chamber 210) to the initial uncovering position, as shown in fig. 3, the number and the position of the first lifting mechanism 110 should be set to keep the upper electrode 220 in a generally horizontal state during the lifting stage, so as to avoid the induced electric coil from moving laterally and wearing; at this time, the upper electrode 220 is jacked up to the initial uncovering position by the first lifting mechanism 110, and at this time, the first lifting mechanism 110 stops driving the upper electrode 220 to ascend, and the second lifting stage of the upper electrode 220 is started.
A rise phase in the second rise phase:
as shown in fig. 4 and 5, the second lifting mechanism 120 continues to drive the upper electrode 220 to lift at the initial uncapping position, so that the upper electrode 220 can be lifted to the target uncapping position. Moreover, in the process that the second lifting mechanism 120 drives the upper electrode 220 to ascend, since one side of the upper electrode 220 is connected to the second lifting mechanism 120, and the upper electrode 220 is stressed at a single point, under the action of gravity, one end of the upper electrode 220, which is far away from the second lifting mechanism 120, will generate vertical downward displacement, that is, one end of the upper electrode 220, which is far away from the second lifting mechanism 120, will deflect downward, and the deflected upper electrode 220 can be directly overlapped on the first lifting mechanism 110.
A descending stage in the second lifting stage:
as shown in fig. 4 and 5, the second elevating mechanism 120 drives the lower electrode 220 to descend to the initial uncapping position at the target uncapping position, and at this time, the upper electrode 220 is supported by the first elevating mechanism 110 below to be maintained in a horizontal state.
A descending phase in the first lifting phase:
as shown in fig. 3, the first elevating mechanism 110 drives the upper electrode 220 to descend to the process position at the initial uncapping position.
It can be seen from the above two lifting stages that the upper electrode 220 can receive a uniform upward driving force from the first lifting mechanism 110 during the first lifting stage, so that the electric induction coil at the bottom of the upper electrode 220 is bounced up along its vertical compression direction without receiving a lateral force, and thus the electric induction coil has no lateral wear. During the second lifting stage of the upper electrode 220, when one end of the upper electrode 220, which is deviated, may be overlapped on the first lifting mechanism 110, it may also be avoided that the upper electrode 220 contacts the chamber 210 to cause the electrical induction coil to generate a lateral acting force, therefore, the semiconductor processing apparatus 200 of the present embodiment, when having the lid opening structure 100 of the present embodiment, may significantly improve the electrical conduction function of the electrical induction coil, effectively ensure the good electrical conduction between the upper electrode 220 and the chamber 210, and simultaneously, may also effectively ensure the sealing performance of the contact surface between the upper electrode 220 and the chamber 210, avoid the radio frequency leakage, and improve the process result.
Referring to fig. 1 and 2, in order to further prevent the dielectric coil from being subjected to a lateral force to improve the conductive function of the dielectric coil, the four first lifting mechanisms 110 may correspond to the edge regions of the upper electrode 220, and the four first lifting mechanisms 110 are symmetrically disposed with respect to the center of the upper electrode 220. For example, as shown in fig. 2, the four first elevating mechanisms 110 may be located at four corners of the chamber 210.
To facilitate the installation of the first elevating mechanism 110, as shown in fig. 6, installation grooves 211 may be formed at four corner positions of the chamber 210, so that each first elevating mechanism 110 may be fixed in the corresponding installation groove 211. The structure and size of the mounting groove 211 are not particularly limited, and may be determined by those skilled in the art according to actual needs, including but not limited to, as shown in fig. 6, the mounting groove 211 may penetrate through the chamber 210 in the thickness direction.
In addition, in some semiconductor processing apparatuses 200, as shown in fig. 1, the chamber 210 may include a first chamber 212 and a second chamber 213 stacked, the first chamber 212 is connected to the upper electrode 220, and the second chamber 213 is located below the first chamber 213, and the process range of the semiconductor processing apparatus 200 may be widened by the two chambers. In this embodiment, the first elevating mechanism 110 should be installed on the first chamber 212, that is, installation grooves 211 are provided at respective corners of the first chamber 212.
Referring to fig. 1 and 7, the first lifting mechanism 110 may include a lifting cylinder 111, and a piston rod (not numbered) of the lifting cylinder 111 may abut against a lower surface of the upper electrode 220 to drive the upper electrode 220 to lift.
It is understood that, besides the lifting cylinder 111 can be used for driving the upper electrode 220 to lift, the first lifting mechanism 110 can also adopt other mechanical structures, for example, a rack and pinion mechanism, a slider-crank mechanism, etc., which can be determined according to actual needs.
In order to avoid rigid contact between the upper electrode 220 and the first lifting mechanism 110, as shown in fig. 7, the first lifting mechanism 110 may further include an elastic buffer assembly 112, and the elastic buffer assembly 112 is interposed between the piston rod and the lower surface of the upper electrode 220. That is, in the process of driving the upper electrode 220 to ascend and descend by the first ascending and descending mechanism 110, the elastic buffer assembly 112 directly contacts with the upper electrode 220 and transmits the driving force.
Specifically, as shown in fig. 7, the elastic buffer assembly 112 may include a first mounting seat 112a, an elastic member 112b, a buffer member 112c, and a second mounting seat 112 d. Wherein the first mounting seat 112a is fixedly arranged at the end of the piston rod facing the upper electrode 220. The second mounting seat 112d is fixedly disposed at an end of the first mounting seat 112a facing the upper electrode 220. The buffer member 112c is fixedly disposed in the second mounting seat 112d, and the buffer member 112c passes through the second mounting seat 112d in a direction approaching the upper electrode 220. The elastic member 112b is disposed in the first mounting seat 112a, and both ends of the elastic member 112b are respectively abutted against the piston rod and the cushion member 112 c. In this way, during the process of descending the upper electrode 220, the gravity of the upper electrode 220 can be buffered by the buffer member 112c and the elastic member 112b, so as to prevent the upper electrode 220 from impacting the first lifting mechanism 110.
It should be noted that, the specific structure of the elastic member 112b is not limited, for example, the elastic member 112b may be a spring or a spring-like device.
It should be further noted that the specific shape of the buffer member 112c is not limited, and in this example, as shown in fig. 7, the buffer member 112c may have a spherical structure. Of course, those skilled in the art can select other shapes of the buffer member according to actual needs.
Referring to fig. 1 and 8, the second lifting mechanism 120 includes a door opening assembly 121, a door opening link 122, a connecting shaft 123, a slider 124, and an upper electrode link 125. The cover opening connecting member 122 is connected to the cover opening assembly 121, and a mounting hole (not shown) is formed in the cover opening connecting member 122, and the connecting shaft 123 is inserted into the mounting hole. The sliding member 124 is slidably fitted over the connecting shaft 123, and the upper electrode connecting member 125 is connected to the upper electrode 220 and the sliding member 124, respectively. In this way, during the second lifting stage, the lid opening assembly 121 drives the slider 124 to lift integrally via the lid opening connector 122, so as to drive the upper electrode connector 125 to lift, and further drive the upper electrode 220 to lift.
It should be noted that, the specific structure of the lid opening assembly 121 is not limited, for example, the lid opening assembly 121 may be a structure of a driving motor + a screw and a slider, that is, the driving motor drives the screw to rotate, so as to drive the slider on the screw to lift, and the slider is fixedly connected to the lid opening connecting member 122 or is an integrated structure, so as to drive the upper electrode 220 to lift. Of course, other mechanical structures can be designed according to actual needs by those skilled in the art.
Referring to fig. 8, the lid opening connecting member 122 may include a first connecting portion 122a and two second connecting portions 122b extending from upper and lower ends of the first connecting portion 122a to a direction close to the sliding member 124, each of the second connecting portions 122b is provided with a mounting hole, the two mounting holes are coaxially disposed, and the connecting shaft 123 is simultaneously inserted into the two mounting holes.
In order to avoid interference of the slider 124, as shown in fig. 9 and 10, the lifting distance S of the first lifting mechanism 110 in the vertical direction is smaller than the lifting distance L of the slider 124 along the connecting shaft 123. That is, as shown in fig. 10, when the upper electrode 220 is jacked up to the initial uncovering position by the first lifting mechanism 110, at this time, the slider 124 does not contact the second connecting portion 122b at the top, that is, a gap exists between the two, so that the slider 124 can be prevented from interfering.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. An upper electrode cap-opening structure, characterized in that the cap-opening structure comprises:
the first lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset first lifting stage and keep the whole upper electrode in a horizontal state, so that the upper electrode is switched between a process position and an initial uncovering position;
the second lifting mechanism can independently drive the upper electrode to lift along the vertical direction in a preset second lifting stage so as to switch the upper electrode between the initial uncovering position and the target uncovering position; wherein the content of the first and second substances,
the initial decap position is between the process position and the target decap position.
2. The door opening structure according to claim 1, wherein the door opening structure comprises a plurality of the first elevating mechanisms corresponding to edge regions of the upper electrode, and the plurality of the first elevating mechanisms are symmetrically disposed with respect to a center of the upper electrode.
3. The door release structure according to claim 1, wherein the first elevation mechanism includes an elevation cylinder, a piston rod of which is capable of abutting against a lower surface of the upper electrode to drive the upper electrode to ascend and descend.
4. A door-opening structure according to claim 3, wherein said first elevating mechanism further comprises an elastic buffer member interposed between said piston rod and a lower surface of said upper electrode.
5. The door release structure according to claim 4, wherein said elastic buffer assembly includes a first mount, an elastic member, a buffer member, a second mount;
the first mounting seat is fixedly arranged at the end part of the piston rod facing the upper electrode;
the second mounting seat is fixedly arranged at the end part of the first mounting seat facing the upper electrode;
the buffer part is fixedly arranged in the second mounting seat, and penetrates out of the second mounting seat towards the direction close to the upper electrode;
the elastic piece is arranged in the first mounting seat, and two ends of the elastic piece are respectively abutted to the piston rod and the buffer piece.
6. The door opening structure according to any one of claims 1 to 5, wherein the second elevating mechanism includes a door opening assembly, a door opening link, a connecting shaft, a slider, and an upper electrode link; wherein the content of the first and second substances,
the cover opening connecting piece is connected with the cover opening assembly and provided with a mounting hole, and the connecting shaft is arranged in the mounting hole in a penetrating manner;
the sliding piece is slidably sleeved on the outer side of the connecting shaft;
the upper electrode connecting piece is respectively connected with the upper electrode and the sliding piece.
7. The structure of claim 6, wherein the lid release link includes a first connecting portion and two second connecting portions extending from upper and lower ends of the first connecting portion toward the direction approaching the slider, respectively, each of the second connecting portions having one of the mounting holes, the two mounting holes being coaxially arranged, and the connecting shaft being simultaneously inserted into the two mounting holes.
8. The door release structure according to claim 6, wherein a lifting distance of the first lifting mechanism in the vertical direction is smaller than a lifting distance of the slider along the connecting shaft.
9. A semiconductor processing apparatus comprising a chamber, an upper electrode at a top of the chamber, and a lower electrode at a bottom of the chamber, wherein the semiconductor processing apparatus further comprises the decap structure of any one of claims 1-8.
10. The semiconductor processing apparatus of claim 9, wherein the chamber comprises a first chamber and a second chamber stacked in sequence, and the upper electrode is detachably connected to the first chamber;
and mounting grooves are formed in the corner positions of the first chamber, and one first lifting mechanism is accommodated in each mounting groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910157358.8A CN111640690B (en) | 2019-03-01 | 2019-03-01 | Top electrode uncapping structure and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910157358.8A CN111640690B (en) | 2019-03-01 | 2019-03-01 | Top electrode uncapping structure and semiconductor processing equipment |
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| CN111640690A true CN111640690A (en) | 2020-09-08 |
| CN111640690B CN111640690B (en) | 2023-05-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117248200A (en) * | 2023-11-15 | 2023-12-19 | 无锡尚积半导体科技有限公司 | CVD wafer reaction electric field generating mechanism |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08296980A (en) * | 1995-04-24 | 1996-11-12 | Nippon Steel Corp | Upper electrode connecting device |
| KR20060011589A (en) * | 2004-07-30 | 2006-02-03 | 엘지.필립스 엘시디 주식회사 | Lid moving unit |
| US20070131167A1 (en) * | 2005-12-14 | 2007-06-14 | Tokyo Electron Limited | Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus |
| CN101373703A (en) * | 2007-08-24 | 2009-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cap-opening mechanism and semiconductor processing device and cap-opening control method thereof |
| CN103849840A (en) * | 2012-12-06 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition equipment |
| CN105280520A (en) * | 2014-07-22 | 2016-01-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Top cover opening mechanism of reaction chamber |
| CN107785284A (en) * | 2016-08-25 | 2018-03-09 | 北京北方华创微电子装备有限公司 | Cap-opening mechanism and semiconductor processing equipment |
-
2019
- 2019-03-01 CN CN201910157358.8A patent/CN111640690B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08296980A (en) * | 1995-04-24 | 1996-11-12 | Nippon Steel Corp | Upper electrode connecting device |
| KR20060011589A (en) * | 2004-07-30 | 2006-02-03 | 엘지.필립스 엘시디 주식회사 | Lid moving unit |
| US20070131167A1 (en) * | 2005-12-14 | 2007-06-14 | Tokyo Electron Limited | Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus |
| CN101373703A (en) * | 2007-08-24 | 2009-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cap-opening mechanism and semiconductor processing device and cap-opening control method thereof |
| CN103849840A (en) * | 2012-12-06 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition equipment |
| CN105280520A (en) * | 2014-07-22 | 2016-01-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Top cover opening mechanism of reaction chamber |
| CN107785284A (en) * | 2016-08-25 | 2018-03-09 | 北京北方华创微电子装备有限公司 | Cap-opening mechanism and semiconductor processing equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117248200A (en) * | 2023-11-15 | 2023-12-19 | 无锡尚积半导体科技有限公司 | CVD wafer reaction electric field generating mechanism |
| CN117248200B (en) * | 2023-11-15 | 2024-04-12 | 无锡尚积半导体科技有限公司 | CVD wafer reaction electric field generating mechanism |
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| CN111640690B (en) | 2023-05-16 |
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