CN117238945A - Transverse gallium nitride-based power device and preparation method thereof - Google Patents
Transverse gallium nitride-based power device and preparation method thereof Download PDFInfo
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- CN117238945A CN117238945A CN202210628483.4A CN202210628483A CN117238945A CN 117238945 A CN117238945 A CN 117238945A CN 202210628483 A CN202210628483 A CN 202210628483A CN 117238945 A CN117238945 A CN 117238945A
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- gallium nitride
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 129
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000006911 nucleation Effects 0.000 claims abstract description 7
- 238000010899 nucleation Methods 0.000 claims abstract description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides a transverse gallium nitride-based power device and a preparation method thereof, wherein the power device comprises: the method comprises the steps of forming an aluminum nitride nucleation layer, a gallium nitride buffer layer and a carbon-doped gallium nitride insulating layer which are sequentially stacked on a substrate, wherein the carbon-doped gallium nitride insulating layer is provided with a plurality of grooves, and the longitudinal structure is utilized to increase the gate-drain distance and improve the withstand voltage; the AlGaN/GaN heterojunction is formed on the surface of the carbon-doped GaN insulating layer; the source electrode, the drain electrode and the grid electrode are formed on the surface of the AlGaN/GaN heterojunction, the plurality of grooves are positioned in a voltage-resistant area between the grid electrode and the drain electrode, and an auxiliary depletion layer is covered on the surface of the AlGaN/GaN heterojunction part of the voltage-resistant area between the grid electrode and the drain electrode; and the heavily doped P-type gallium nitride layer is formed on the surface of the auxiliary depletion layer above the protruding part between any two adjacent grooves and is connected with the source electrode across the grid electrode through the connecting structure.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a transverse gallium nitride-based power device and a preparation method thereof.
Background
The third generation wide band gap semiconductor material represented by gallium nitride (GaN) has the advantages of high band gap width, high breakdown electric field strength, high saturated electron drift speed, high radiation resistance, good chemical stability and the like, and is particularly suitable for manufacturing high-voltage-resistance, high-temperature-resistance, high-frequency and high-power electronic devices. The GaN material is characterized in that the electron surface density can reach 10 in undoped AlGaN/GaN by utilizing the polarization effect 13 cm -2 High concentration Two-dimensional electron gas (Two-dimensional electron gas,2 DEG) of the order of magnitude. The 2DEG has high surface density and high mobility in a channel two-dimensional plane, and the transverse conduction GaN field effect transistor manufactured by utilizing the characteristic is the most common at present and is also the most potential epitaxial structure form.
In conventional AlGaN/GaN field effect transistors, a relatively long, low doped N-drift region is required to ensure sufficient breakdown voltage, and the larger the size of the low doped N-drift region, the larger the rated voltage of the withstand voltage, but the larger the on-resistance thereof increases drastically. The on-resistance increases with voltage to a power of 2.4-2.6, which reduces the current rating. In order to obtain a certain on-resistance value, the area of the silicon wafer must be increased, and the cost increases. Therefore, it is necessary to solve the contradictory problems between low on-resistance, high breakdown voltage, and small-size high integration of GaN-based power devices.
Disclosure of Invention
In order to solve the problems, the invention provides a transverse gallium nitride-based power device and a preparation method thereof, wherein the device has high breakdown voltage and low on-resistance, and the size of the device is not increased.
In one aspect, the present invention provides a lateral gallium nitride-based power device comprising:
forming an aluminum nitride nucleation layer, a gallium nitride buffer layer and a carbon-doped gallium nitride insulating layer which are sequentially stacked on a substrate, wherein the carbon-doped gallium nitride insulating layer is provided with a plurality of grooves;
the AlGaN/GaN heterojunction is formed on the surface of the carbon-doped GaN insulating layer;
the grooves are positioned in a voltage-resistant area between the grid electrode and the drain electrode, and an auxiliary depletion layer is covered on the surface of the aluminum gallium nitride/gallium nitride heterojunction part in the voltage-resistant area between the grid electrode and the drain electrode;
and the heavily doped P-type gallium nitride layer is formed on the surface of the auxiliary depletion layer above the protruding part between any two adjacent grooves, and the heavily doped P-type gallium nitride layer spans the grid electrode and the source electrode through a connecting structure to form connection.
Optionally, the auxiliary depletion layer is a lightly doped P-type gallium nitride layer, and the thickness is 3-500 nm.
Optionally, the depth of the groove is 0.1-5 μm.
Optionally, the etching angle of the groove is 90-135 degrees.
Optionally, the thickness of the AlGaN barrier layer of the AlGaN/GaN heterojunction is 3-50 nm.
In another aspect, the present invention provides a method for preparing a lateral gallium nitride-based power device, the method comprising:
sequentially forming an aluminum nitride nucleation layer, a gallium nitride buffer layer and a carbon-doped gallium nitride insulating layer on a substrate;
etching a plurality of grooves on the carbon-doped gallium nitride insulating layer;
forming an AlGaN/GaN heterojunction on the surface of the carbon-doped GaN insulating layer with the groove;
forming an auxiliary depletion layer on the surface of the AlGaN/GaN heterojunction;
forming a heavily doped P-type gallium nitride layer on the surface of the auxiliary depletion layer above the protruding part between any two adjacent grooves, wherein the width of the heavily doped P-type gallium nitride layer is smaller than the distance between the two grooves;
etching the auxiliary depletion layer to expose the surface of the AlGaN/GaN heterojunction part;
forming a source electrode, a drain electrode and a grid electrode on the surface of the exposed AlGaN/GaN heterojunction part;
and forming a connection structure between the source electrode and the heavily doped P-type gallium nitride layer.
Optionally, the auxiliary depletion layer is a lightly doped P-type gallium nitride layer, and the thickness is 3-500 nm.
Optionally, the depth of the groove is 0.1-5 μm.
Optionally, the etching angle of the groove is 90-135 degrees.
Optionally, the thickness of the AlGaN barrier layer of the AlGaN/GaN heterojunction is 3-50 nm.
According to the transverse gallium nitride-based power device and the preparation method thereof, the grooves in the carbon-doped gallium nitride insulating layer are utilized to longitudinally fold the aluminum gallium nitride/gallium nitride heterojunction, the distance between the grid electrode and the drain electrode is increased, the structure ensures high breakdown voltage, meanwhile, the size of the device is reduced, cost reduction and improvement of the device integration level are facilitated, and a feasibility scheme is provided for industrialization of the gallium nitride-based power device.
Drawings
Fig. 1 is a schematic structural diagram of a lateral gan-based power device according to an embodiment of the invention;
fig. 2 to 9 are schematic process flow diagrams of a method for fabricating a lateral gan-based power device according to an embodiment of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, but it should be understood that these descriptions are only illustrative and are not intended to limit the scope of the present disclosure. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
Some embodiments of the present invention are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
An embodiment of the present invention provides a lateral gallium nitride-based power device, as shown in fig. 1, including:
an aluminum nitride (AlN) nucleation layer 101, a gallium nitride (GaN) buffer layer 102, and a carbon-doped gallium nitride insulating layer 103, which are sequentially stacked on a substrate 100, wherein the carbon-doped gallium nitride insulating layer has a plurality of trenches;
an aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterojunction 104 formed on the surface of the carbon-doped gallium nitride insulating layer 103;
the source electrode 107, the drain electrode 108 and the gate electrode 109 are formed on the surface of the AlGaN/GaN heterojunction 104, the plurality of grooves on the carbon-doped GaN insulating layer 103 are positioned in a voltage-resistant region between the gate electrode 109 and the drain electrode 108, and an auxiliary depletion layer 105 is covered on the surface of the AlGaN/GaN heterojunction part of the voltage-resistant region between the gate electrode 109 and the drain electrode 108;
and heavily doped P-type gallium nitride (P) formed on the surface of the auxiliary depletion layer 105 above the raised portion between any two adjacent trenches + GaN) layer 106, said heavily doped P-type gallium nitride layer 106 forming a connection with the source 107 across the gate 109 by means of a connection structure 110.
As an embodiment, the substrate 100 is a sapphire substrate, eliminating the potential for vertical breakdown when the device drain is stressed.
Below the source 107, drain 108 and gate 109 is no auxiliary depletion layer, and the auxiliary depletion layer 105 may be lightly doped P-type gallium nitride (P - -GaN) layer, thickness between 3 and 500nm. By means of the heavily doped P-type gallium nitride layer 106, lightly doped P-type gallium nitride (P - GaN) auxiliary depletion layer 105 and source electrode 107 can form good ohmic contact, auxiliary depletion layer 105 and source electrode 107 keep equipotential, and plays an auxiliary depletion role on AlGaN/GaN heterojunction channel, which reduces the doping concentration of the voltage-resistant region between the gate electrode and the drain electrode, optimizes the electric field distribution and improves the breakdown voltage of the device.
For the plurality of trenches on the carbon doped gallium nitride insulating layer 103, the number of the trenches is set according to the actual process, and the width of each trench may be the same or different. The depth of the trench can be designed to be 0.1-5 μm, and referring to fig. 1, the etching angle θ of the trench takes a value of 90 ° to 135 °.
According to the transverse gallium nitride-based power device, the groove design is added in the carbon-doped gallium nitride insulating layer, the aluminum gallium nitride/gallium nitride heterojunction is longitudinally folded, the distance between the grid electrode and the drain electrode is increased, the size of the device is reduced while the high breakdown voltage is ensured, the cost reduction and the improvement of the device integration level are facilitated, and a feasible scheme is provided for industrialization of the gallium nitride-based power device.
In addition, in the embodiment of the invention, in the AlGaN/GaN heterojunction, the AlGaN barrier layer is a 3-50 nm thin barrier layer, and the use of the thin barrier layer is convenient for realizing an enhanced device.
On the other hand, another embodiment of the present invention provides a method for manufacturing a lateral gallium nitride-based power device, and fig. 2 to 9 show a process flow of the manufacturing method.
Referring to fig. 2, an aluminum nitride nucleation layer 201, a gallium nitride buffer layer 202, and a carbon-doped gallium nitride insulating layer 203 are first sequentially formed on a substrate 200.
Next, as shown in fig. 3, a plurality of trenches are etched on the carbon doped gallium nitride insulating layer 203. In this step, the number of grooves is set according to the actual process, and the width of each groove may be the same or different. The depth of the groove can be designed to be 0.1-5 mu m, and the etching angle theta of the groove is 90-135 degrees.
Then, as shown in fig. 4, an aluminum gallium nitride/gallium nitride heterojunction 204 is formed on the surface of the carbon-doped gallium nitride insulating layer 203 having the trench. In order to obtain an enhanced device, in an AlGaN/GaN heterojunction, the AlGaN barrier layer is a 3-50 nm thin barrier layer.
Subsequently, as shown in fig. 5, an auxiliary depletion layer 205 is formed on the surface of the algan/gan heterojunction 204. The auxiliary depletion layer 205 may be generated by deposition, alternatively, the auxiliary depletion layer 205 may be lightly doped P-type gallium nitride (P - -GaN) layer, thickness between 3 and 500nm.
Then, as shown in fig. 6, heavily doped P-type gallium nitride (P + GaN) layer 206, the width of the heavily doped P-type gallium nitride layer 206 is smaller than the distance between two trenches. Specifically, the heavily doped P-type gallium nitride layer 206 may be patterned and then P deposited + -GaN. Alternatively, a layer of P may be deposited + GaN, then etched, finally obtaining the desired pattern.
Next, as shown in fig. 7, the auxiliary depletion layer 205 is etched, exposing the surface of the aluminum gallium nitride/gallium nitride heterojunction portion. The exposed portions of the surface are subsequently used to fabricate the source, drain and gate electrodes of the device.
Next, as shown in fig. 8, a source electrode 207, a drain electrode 208, and a gate electrode 209 are formed on the surface of the exposed algan/gan heterojunction portion.
In this embodiment, the ohmic contact metal of the source electrode 207 and the drain electrode 208 is a Ti/Al/Ni/Au laminated structure, and the lift-off process is adopted and N is performed at 850 DEG C 2 The rapid thermal annealing was performed in an atmosphere for 30 seconds.
The process of forming the gate includes: and (5) gate groove etching and gate metal deposition. The enhancement mode device can be realized by gate trench etching. The gate metal is Ni/Au, pt/Ti/Au, al/Ni/Au or TiN, etc.
Then, as shown in fig. 9, a connection structure 210 between the source electrode 207 and the heavily doped P-type gallium nitride layer 206 is formed. The connection structure realizes equipotential of the auxiliary depletion layer 205 and the source electrode 207, plays an auxiliary depletion role on the AlGaN/GaN heterojunction channel, equivalently reduces the doping concentration of a voltage-resistant region between the grid electrode and the drain electrode, optimizes the electric field distribution and improves the breakdown voltage of the device.
In the above-described production process, the specific process conditions are not limited to the steps, and may be arbitrarily selected in the specific implementation.
In the above description, technical details of patterning, etching, and the like of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A lateral gallium nitride-based power device, comprising:
forming an aluminum nitride nucleation layer, a gallium nitride buffer layer and a carbon-doped gallium nitride insulating layer which are sequentially stacked on a substrate, wherein the carbon-doped gallium nitride insulating layer is provided with a plurality of grooves;
the AlGaN/GaN heterojunction is formed on the surface of the carbon-doped GaN insulating layer;
the grooves are positioned in a voltage-resistant area between the grid electrode and the drain electrode, and an auxiliary depletion layer is covered on the surface of the aluminum gallium nitride/gallium nitride heterojunction part in the voltage-resistant area between the grid electrode and the drain electrode;
and the heavily doped P-type gallium nitride layer is formed on the surface of the auxiliary depletion layer above the protruding part between any two adjacent grooves, and the heavily doped P-type gallium nitride layer spans the grid electrode and the source electrode through a connecting structure to form connection.
2. The lateral gallium nitride-based power device according to claim 1, wherein the auxiliary depletion layer is a lightly doped P-type gallium nitride layer having a thickness of 3-500 nm.
3. The lateral gallium nitride-based power device of claim 1, wherein the trench has a depth of 0.1-5 μm.
4. The lateral gallium nitride-based power device of claim 1, wherein the trench has an etch angle of 90 ° to 135 °.
5. The lateral gallium nitride-based power device of claim 1, wherein the aluminum gallium nitride barrier layer of the aluminum gallium nitride/gallium nitride heterojunction has a thickness of between 3 and 50nm.
6. A method for fabricating a lateral gallium nitride-based power device, the method comprising:
sequentially forming an aluminum nitride nucleation layer, a gallium nitride buffer layer and a carbon-doped gallium nitride insulating layer on a substrate;
etching a plurality of grooves on the carbon-doped gallium nitride insulating layer;
forming an AlGaN/GaN heterojunction on the surface of the carbon-doped GaN insulating layer with the groove;
forming an auxiliary depletion layer on the surface of the AlGaN/GaN heterojunction;
forming a heavily doped P-type gallium nitride layer on the surface of the auxiliary depletion layer above the protruding part between any two adjacent grooves, wherein the width of the heavily doped P-type gallium nitride layer is smaller than the distance between the two grooves;
etching the auxiliary depletion layer to expose the surface of the AlGaN/GaN heterojunction part;
forming a source electrode, a drain electrode and a grid electrode on the surface of the exposed AlGaN/GaN heterojunction part;
and forming a connection structure between the source electrode and the heavily doped P-type gallium nitride layer.
7. The method of claim 6, wherein the auxiliary depletion layer is a lightly doped P-type gallium nitride layer having a thickness of 3-500 nm.
8. The method of claim 6, wherein the trench has a depth of 0.1 to 5 μm.
9. The method of claim 6, wherein the trench has an etch angle of 90 ° to 135 °.
10. The method of claim 6, wherein the aluminum gallium nitride barrier layer of the aluminum gallium nitride/gallium nitride heterojunction has a thickness of between 3 and 50nm.
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| CN202210628483.4A CN117238945A (en) | 2022-06-06 | 2022-06-06 | Transverse gallium nitride-based power device and preparation method thereof |
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| CN202210628483.4A CN117238945A (en) | 2022-06-06 | 2022-06-06 | Transverse gallium nitride-based power device and preparation method thereof |
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