CN117238766A - Titanium aluminum corrosion method for special semiconductor device - Google Patents
Titanium aluminum corrosion method for special semiconductor device Download PDFInfo
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- CN117238766A CN117238766A CN202311238579.0A CN202311238579A CN117238766A CN 117238766 A CN117238766 A CN 117238766A CN 202311238579 A CN202311238579 A CN 202311238579A CN 117238766 A CN117238766 A CN 117238766A
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- titanium
- metal
- layer
- corrosion
- aluminum
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- 238000005260 corrosion Methods 0.000 title claims abstract description 60
- 230000007797 corrosion Effects 0.000 title claims abstract description 56
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010936 titanium Substances 0.000 claims abstract description 43
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000004528 spin coating Methods 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a titanium aluminum corrosion method of a special semiconductor device, and belongs to the technical field of semiconductor manufacturing. The method comprises the following steps: sequentially depositing a metal titanium layer and a metal aluminum layer on the surface of the wafer with the oxide film and the high-temperature annealed nickel metal film; spin-coating photoresist and performing photoetching treatment; etching the aluminum metal layer; preparing titanium corrosive liquid to corrode the metal titanium layer; and removing the photoresist film to obtain the window shape of the metal titanium aluminum layer with a preset shape. The method achieves the purposes of completing metal corrosion, not affecting the high-temperature nickel film in the corrosion area, and not affecting the chip performance due to the corrosion amount of the oxide film.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a titanium aluminum corrosion method of a special semiconductor device.
Background
Titanium aluminum is commonly used in electrode fabrication during semiconductor fabrication, titanium is a metal that increases adhesion and aluminum is a thickened electrode metal. The electrode is completed through the working procedures of titanium aluminum film forming (evaporation and sputtering), photoetching patterning, etching, annealing (alloying treatment) and the like. The manufacturing of the titanium aluminum electrode is realized by dry etching and wet etching in the preparation of a semiconductor process, and the wet etching is more economical and efficient compared with the dry etching in most batch production lines, so that the wet etching is the preferred electrode manufacturing process.
In the manufacture of semiconductor metal electrodes, if a wet process is adopted to corrode a metal layer, the expected corrosion effect is expected to be achieved, the selection of corrosive liquid is important, chemical composition, content of each chemical, corrosion temperature, corrosion mode and the like of the corrosive liquid are considered, special attention is paid to corrosion and influence of the corrosive liquid on a lower surface film of the metal layer, and for some devices with special structures, if the corrosive liquid provided by manufacturers cannot meet the requirements, process development is needed according to the requirements of special chip structures, and corrosive liquid and corrosion process suitable for the special chip structures are developed.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a titanium aluminum corrosion method of a special semiconductor device, which can finish titanium aluminum corrosion of a metal film, but does not influence high-temperature annealed nickel on the lower layer of a titanium film of a corrosion window and does not influence the performance of a chip on the corrosion amount of an oxide film on the lower layer of the titanium film.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the invention provides a titanium aluminum corrosion method of a special semiconductor device, which comprises the following steps:
(1) Sequentially depositing a metal titanium layer and a metal aluminum layer on the surface of a wafer containing high-temperature annealed nickel and an oxide film;
(2) Spin-coating photoresist on the surface of the metal aluminum layer, and performing photoetching treatment to form a photoresist film with a window with a preset shape;
(3) Etching the metal aluminum layer through the photoresist film with the preset-shape window to form a metal aluminum layer with the preset-shape window;
(4) Corroding the metal titanium layer through the metal aluminum layer with the preset shape window to obtain the metal titanium layer with the preset shape window;
(5) And removing the photoresist film to obtain the device with the metal titanium aluminum layer with the preset shape.
Further, the thickness of the metallic titanium layer in the step (1) is 20nm-150nm; the thickness of the metal aluminum layer is 1 mu m-15 mu m.
Further, the thickness of the photoresist in the step (2) is 1.2 mu m-4.0 mu m.
Further, in the step (3), an aluminum corrosive liquid is adopted to corrode the metal aluminum layer, and the conventional aluminum corrosive liquid is adopted to ensure that no corrosion to the metal titanium is required; the main components of the aluminum corrosive liquid are phosphoric acid, nitric acid, acetic acid, water and the like.
Further, in the step (4), the titanium metal layer is corroded by adopting a titanium corrosive liquid, wherein the titanium corrosive liquid is BOE (oxidative corrosion buffer) containing hydrofluoric acid and ammonium fluoride.
Still further, the titanium etchant is hydrofluoric acid: the volume ratio of the ammonium fluoride is 1:5-10 and diluted with deionized water.
Further, the amount of deionized water depends on the corrosion rate of the titanium etchant to the oxide film.
Further, the corrosion rate of the titanium corrosive liquid to the oxide film is controlled to be less than 40nm/min, and the corrosion rate of the titanium corrosive liquid to the oxide film after 2min of over-corrosion is controlled to be less than 100nm.
The titanium corrosive liquid is selected, so that the high-temperature annealed nickel is not corroded, and the corrosion amount of an oxide film is not influenced on the performance of a chip.
Further, in the step (5), the photoresist film is removed by adopting an organic photoresist removing solution. The organic photoresist stripping solution adopts conventional organic photoresist stripping solution.
The invention also provides a titanium aluminum corrosion semiconductor device prepared by the method.
Compared with the prior art, the invention has the following beneficial effects:
the titanium aluminum corrosion method of the special semiconductor device provided by the invention can complete the corrosion of the titanium aluminum metal layer, can realize the purposes that the high-temperature nickel corrosion film of the corrosion window is not affected, and the corrosion amount of the oxide film of the corrosion window does not affect the reliability of the chip.
Drawings
FIG. 1 is a schematic diagram of a process for etching a titanium aluminum metal layer of a special semiconductor device according to the present invention;
FIG. 2 is a wafer coated with photoresist in accordance with the present invention;
FIG. 3 is a device of the present invention having a photoresist film with a pre-shaped window;
FIG. 4 shows a device of the present invention having a titanium metal layer and an aluminum metal layer with windows of predetermined shapes, with the nickel and oxide films exposed in the etched areas of the device;
FIG. 5 is a schematic illustration of a particular device of the present invention after photoresist removal;
FIG. 6 is a microscopic surface view of example 1 of the present invention;
FIG. 7 is a microscopic surface view of example 2 of the present invention.
Reference numerals:
1-wafer; a 2-oxide film; 3-high temperature annealing nickel; 4-a metallic titanium layer; a 5-metal aluminum layer; 6-photoresist film.
Description of the embodiments
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. In addition, the raw materials related to the invention are common commercial products unless otherwise specified.
Examples
A titanium aluminum metal layer corrosion method of a special semiconductor device is shown in a flow chart in figure 1, and comprises the following specific steps:
1) 2 silicon carbide wafers of 6 inches after titanium aluminum evaporation are prepared, ti/Al-30 nm/4 mu m is used for a first test, and 2 silicon carbide wafers are used for subsequent processes.
2) Carrying out photoetching treatment on the generated titanium aluminum metal layer: and (3) gluing and curing the surface of the titanium-aluminum wafer, as shown in fig. 2.
The photoresist is AZ6130 photoresist, the thickness is in the range of (2.5+/-0.2) mu m, normal exposure and development are carried out before metal corrosion after solidification, and a photoresist film with a window with a preset shape is formed on the upper surface of the metal aluminum layer, as shown in figure 3.
3) Etching the metal aluminum layer through a photoresist film mask with a window with a preset shape: the aluminum film with the thickness of 4 mu m is corroded by aluminum corrosive liquid, so that aluminum is required to be corroded cleanly, and corrosion affecting metallic titanium is avoided; the aluminum etchant does not corrode titanium.
4) Preparing titanium corrosive liquid: 10000ml of deionized water is firstly prepared and poured into a corrosion tank, and then 500ml of 1 is measured by a measuring barrel: 7 (hydrofluoric acid: ammonium fluoride oxidation corrosion buffer) solution is slowly poured into the corrosion tank, then uniformly stirred, the prepared titanium corrosion solution is subjected to oxide film corrosion rate spot inspection, the required corrosion rate is smaller than 40nm/min, and the thickness of the oxide film corroded after 2min of over-corrosion is ensured to be smaller than 100nm. The actual test rate was 35nm/min.
5) Etching the metallic titanium layer: the titanium etching is carried out by the titanium etching solution for 30nm, the etching time is controlled, no residual titanium is required, the over etching time is not more than 2min, and the oxide film etching is ensured to be less than 100nm, as shown in figure 4.
6) Organic photoresist removal: and after the titanium aluminum metal layer is corroded, removing the photoresist film on the upper surface, as shown in fig. 5.
Wherein, the photoresist film is removed by adopting organic photoresist stripping solution, and no residual photoresist is required.
As shown in fig. 6, 1 lens of the mirror surface was taken, and the mirror high temperature annealed nickel was unchanged.
Examples
The method for etching the titanium aluminum metal layer of the special semiconductor device comprises the following steps:
1) 2 pieces of 6 inch silicon carbide wafers after titanium aluminum evaporation are prepared, a second test is carried out on the 2 pieces of silicon carbide wafers, ti/Al is 80nm/6 mu m, and the 2 pieces of silicon carbide wafers are simultaneously subjected to subsequent processes.
2) Carrying out photoetching treatment on the generated titanium aluminum metal film: and (5) gluing and curing the surface of the titanium-aluminum wafer.
The photoresist is AZ6130 photoresist, the thickness is in the range of (2.8+/-0.2) mu m, normal exposure and development are carried out before metal corrosion after solidification, and a photoresist film with a window with a preset shape is formed on the upper surface of the metal aluminum layer.
3) Metal aluminum corrosion: firstly, an aluminum film with the size of 6 mu m is corroded, the corrosive liquid is aluminum corrosive liquid, aluminum is required to be corroded cleanly, and corrosion affecting metallic titanium is avoided.
4) Preparing titanium corrosive liquid, firstly preparing 10000ml of deionized water, pouring the deionized water into a corrosion tank, and measuring 500ml of 1 by using a measuring barrel: 7 (hydrofluoric acid: ammonium fluoride oxidation corrosion buffer) solution is slowly poured into the corrosion tank, then uniformly stirred, the prepared titanium corrosion solution is subjected to oxide film corrosion rate spot inspection, the required corrosion rate is smaller than 40nm/min, and the thickness of the oxide film corroded after 2min of over-corrosion is ensured to be smaller than 100nm. The actual test rate was 33nm/min.
5) Corrosion of metallic titanium: and (3) performing titanium corrosion at 80nm, controlling corrosion time, requiring no titanium residue, and ensuring that the over-corrosion time is not more than 2min, and ensuring that the oxide film corrosion is less than 100nm.
6) Organic photoresist removal: and (3) removing the photoresist film on the upper surface after the titanium aluminum metal layer is corroded, and adopting an organic photoresist removing solution to ensure no residual photoresist.
As shown in fig. 7, 1 lens of the microscopic surface was taken, and the high temperature annealed nickel film was unchanged.
Finally, it should be noted that the above description is only for illustrating the technical solution of the present invention, and not for limiting the scope of the present invention, and that the simple modification and equivalent substitution of the technical solution of the present invention can be made by those skilled in the art without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. A titanium aluminum corrosion method of a special semiconductor device comprises the following steps:
(1) Sequentially depositing a metal titanium layer and a metal aluminum layer on the surface of a wafer containing high-temperature annealed nickel and an oxide film;
(2) Spin-coating photoresist on the surface of the metal aluminum layer, and performing photoetching treatment to form a photoresist film with a window with a preset shape;
(3) Etching the metal aluminum layer through the photoresist film with the preset-shape window to form a metal aluminum layer with the preset-shape window;
(4) Corroding the metal titanium layer through the metal aluminum layer with the preset shape window to obtain the metal titanium layer with the preset shape window;
(5) And removing the photoresist film to obtain the device with the metal titanium aluminum layer with the preset shape.
2. The method according to claim 1, wherein the metallic titanium layer of step (1) has a thickness of 20nm-150nm and the metallic aluminum layer has a thickness of 1 μm-15 μm.
3. The method of claim 1, wherein the photoresist of step (2) has a thickness of 1.2 μm to 4.0 μm.
4. The method of claim 1, wherein step (3) etches the metallic aluminum layer with an aluminum etchant.
5. The method of claim 1, wherein step (4) etches the metallic titanium layer with a titanium etchant that is a BOE comprising hydrofluoric acid and ammonium fluoride.
6. The method of claim 5, wherein the titanium etchant is hydrofluoric acid: the volume ratio of the ammonium fluoride is 1:5-10 and diluted with deionized water.
7. The method of claim 6, wherein the amount of deionized water is based on the corrosion rate of the oxide film by the titanium etchant.
8. The method according to claim 7, wherein the corrosion rate of the titanium etching solution to the oxide film is controlled to be less than 40nm/min, and the corrosion of the over-etching 2min to the oxide film is controlled to be less than 100nm.
9. The method of claim 1, wherein step (5) removes the photoresist film using an organic desmutting solution.
10. A titanium aluminum etched semiconductor device etched by the method of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311238579.0A CN117238766A (en) | 2023-09-25 | 2023-09-25 | Titanium aluminum corrosion method for special semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311238579.0A CN117238766A (en) | 2023-09-25 | 2023-09-25 | Titanium aluminum corrosion method for special semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117238766A true CN117238766A (en) | 2023-12-15 |
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| CN202311238579.0A Pending CN117238766A (en) | 2023-09-25 | 2023-09-25 | Titanium aluminum corrosion method for special semiconductor device |
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| Country | Link |
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| CN (1) | CN117238766A (en) |
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- 2023-09-25 CN CN202311238579.0A patent/CN117238766A/en active Pending
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