CN110993725A - PSG passivation layer pressure point corrosion method - Google Patents
PSG passivation layer pressure point corrosion method Download PDFInfo
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- CN110993725A CN110993725A CN201911038546.5A CN201911038546A CN110993725A CN 110993725 A CN110993725 A CN 110993725A CN 201911038546 A CN201911038546 A CN 201911038546A CN 110993725 A CN110993725 A CN 110993725A
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- psg
- corrosion
- passivation
- pressure point
- layer
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- 238000005260 corrosion Methods 0.000 title claims abstract description 63
- 230000007797 corrosion Effects 0.000 title claims abstract description 63
- 238000002161 passivation Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 25
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000002791 soaking Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 14
- 239000007788 liquid Substances 0.000 abstract description 14
- 239000000243 solution Substances 0.000 description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 5
- 238000004383 yellowing Methods 0.000 description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A PSG passivation layer pitting corrosion method comprises the following steps of putting a PSG passivation corrosion piece to be corroded of a pitting point into NH 4F: CH3COOH ═ 10: 7, corroding until the PSG thickness of 2000-3000A remains in the pressure point area, and then putting a PSG passivation corrosion piece into NH 4F: CH3COOH ═ 10: 9 until the PSG layer of the pressure point area is completely corroded, then putting the PSG passivation layer corrosion piece into the GH3OH solution for soaking, finally washing with clear water and drying. Different from the prior art, the technical scheme can avoid the problems of blackening and passivation caused by corrosion of the aluminum layer by sequentially corroding in corrosive liquids with different concentrations.
Description
Technical Field
The invention relates to a PSG passivation wet etching process in a bipolar integrated circuit manufacturing process.
Background
After the diffusion process of the solar cell, a layer of psg (phosphorous silicate glass) is formed on the surface of the silicon wafer and must be removed.
The traditional PSG passivation etching method is to etch the PSG layer on the pressure point region cleanly by using 1 mixture solution, which is usually a mixture solution of 38% -42% of NH4F and 96% -99.5% of CH3COOH, and the ratio (volume ratio) of the mixture solution is usually NH 4F: CH3COOH ═ 10: 7-10: 9, the use of the mixed solution with 1 proportion alone can cause the following common problems in practical application: the mixed solution can continuously corrode the aluminum layer on the pressure point area after the PSG layer on the pressure point area is completely corroded, so that the aluminum layer is dark, yellow, black and the like, and phosphorus-silicon glass residue can be generated in the pressure point area.
In practical application, in order to solve the problem of residual phosphorosilicate glass in a pressure point region in the PSG passivation layer corrosion process, the content of NH4F is generally increased in a liquid preparation ratio or the corrosion time is prolonged, and although the problem of the residual phosphorosilicate glass can be solved by adopting the method, the phenomena of yellowing and blackening of an aluminum layer are aggravated.
Tests prove that the phenomena of yellowing and blackening of an aluminum layer can be effectively solved by increasing the content of CH3COOH in the liquid preparation ratio, but the PSG corrosion rate is reduced due to the increase of the content of CH3COOH, so that the more serious problem of phosphorosilicate glass residue in a pressure point area is caused.
The phosphorosilicate glass residue in the pressure point area can cause the reduction of the yield of products, the yellowing phenomenon of the aluminum layer can influence the appearance problem of the products, and the blackening phenomenon of the aluminum layer can cause the performance failure of the products and cause scrapping. Therefore, how to improve a series of abnormal problems of the pressure point area caused by PSG passivation corrosion and effectively improve the qualification rate of passivation corrosion becomes an important research subject for engineering technicians. .
Disclosure of Invention
Therefore, a novel PSG laminated point corrosion method is needed to be provided, and the problems of residual glass, yellowing and blackening of an aluminum layer in the existing corrosion method are solved.
A PSG passivation layer pitting corrosion method comprises the following steps of putting a PSG passivation corrosion piece to be corroded of a pitting point into NH 4F: CH3COOH ═ 10: 7, corroding until the PSG thickness of 2000-3000A remains in the pressure point area, and then putting a PSG passivation corrosion piece into NH 4F: CH3COOH ═ 10: 9 until the PSG layer in the pressure point area is completely corroded,
and soaking the PSG passivation layer corrosion piece into a GH3OH solution, finally washing with clear water and drying.
Specifically, the method further comprises the steps of depositing a PSG passivation layer of 8000A +/-800A on the metal medium, and forming a required pattern through photoetching as corrosion protection.
Specifically, the method further comprises the step of hardening the film before etching. The specific process of hardening the film is to put the PSG passivation layer corrosion piece into a 150-degree oven to be baked for 55 minutes, mainly used for removing a residual developing solution solvent after photoetching, enhancing the adhesion of the photoresist and the passivation PSG layer and having the beneficial effects of reducing the transverse erosion in the corrosion process.
Different from the prior art, the technical scheme can avoid the problems of blackening and passivation caused by corrosion of the aluminum layer by sequentially corroding in corrosive liquids with different concentrations.
Drawings
FIG. 1 is a schematic diagram of a wafer to be etched according to an embodiment;
FIG. 2 is a schematic illustration of a lithographically formed corrosion shield according to an embodiment;
FIG. 3 is a schematic diagram of a preliminary etch according to an embodiment;
FIG. 4 is a reference view of a preliminary corrosion electron microscope according to an embodiment;
FIG. 5 is a schematic illustration of a further etch according to an embodiment;
FIG. 6 is a further corrosion electron microscopy reference image according to an embodiment;
FIG. 7 is a schematic diagram of a bump etching pattern according to an embodiment.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to FIG. 1, a process for performing PSG passivation etching before performing PSG passivation etching is described in this embodiment
1) After the passivation process, a PSG passivation layer of 8000A +/-800A is deposited, as shown in FIG. 1, a medium I is a metal layer medium (generally AL), and a medium II is deposited thereon to form a PSG layer.
2) The desired pattern is formed by photolithography as an etch mask. As shown in fig. 2; medium III is a photoresist mask layer.
Step 2: pretreatment before corrosion
The Hard coating before etching (Hard cake) has the significance of reducing the content of liquid solvent in the photoresist, enhancing the adhesion of the photoresist and the PSG dielectric layer and being beneficial to obtaining better etching effect.
And step 3: preparation of etching apparatus
In our example, a passivating etch apparatus was provided: comprises a first corrosion groove, a second corrosion groove, a first CH3OH groove, a second CH3OH groove, a water flushing groove and a drying machine. Wherein, N2 bubbling devices are required to be added at the bottoms of the first corrosion tank and the second corrosion tank to ensure that the corrosion solution can be fully and uniformly mixed and improve the corrosion effect.
And 4, step 4: preparing corrosive liquid
1) Preparing a passivation corrosion solution in a first corrosion tank, wherein the weight ratio of NH 4F: CH3COOH ═ 10: 7
2) Preparing a passivation corrosion solution in a second corrosion tank, wherein the weight ratio of NH 4F: CH3COOH ═ 10: 9
3) CH3OH is respectively distributed in the first CH3OH groove and the second CH3OH groove
And 5: PSG passivation etch
1) Firstly, a PSG passivation corrosion piece is put into a first corrosion groove (NH 4F: CH3 COOH: 10: 7 mixed solution) to be corroded until the PSG thickness of 2000-3000A remains in a pressure point area, as shown in figure 3, meanwhile, figure 4 shows a corresponding SEM cross section, the PSG passivation corrosion piece is firstly put into the mixed solution of NH 4F: CH3 COOH: 10: 7 to be corroded until the PSG thickness of 2000-3000A remains in a pressure point area, and the corrosion in the step has the following 2 effects that ① passivation corrosion liquid with high NH4F content is used to remove most of PSG in the pressure point area, so that phosphorosilicate glass residue is avoided, ②, and the PSG thickness of 2000-3000A remaining in the pressure point area during the corrosion process is used for avoiding the passivation corrosion liquid with high NH4F content from corroding an aluminum layer in the pressure point area, so that the aluminum layer is yellow and black.
2) And (3) continuously placing the PSG passivation corrosion piece into a second corrosion groove (NH 4F: CH3 COOH: 10: 9 mixed solution) for corrosion, wherein the piece needs to be shaken up and down in the corrosion process until the PSG layer in the pressure point area is completely corroded, as shown in FIG. 5, FIG. 6 shows a corresponding SEM section ①, the residual 2000-3000A PSG in the pressure point area is corroded by using a passivation corrosion solution with high CH3COOH content, and the passivation corrosion solution with high CH3COOH content has little influence on the aluminum layer in the pressure point area when in corrosion, and cannot cause yellowing and blackening phenomena, ②, and the use of the passivation corrosion solution with high CH3COOH content can ensure that the pressure point area is completely corroded without leaving phosphorosilicate glass, ③, and the piece shakes up and down in the corrosion process, so that the corrosion solution can more uniformly corrode the phosphorosilicate glass in the pressure point area.
3) ①, through soaking CH3OH, corrosive liquid adhered to the pressure point area can be quickly dissolved in CH3OH, then through next flushing and cleaning, the corrosive liquid on the pressure point area is thoroughly cleaned, the aluminum layer is prevented from being continuously corroded by the residual corrosive liquid on the pressure point area, ② and a method of soaking for 2 times in 2 grooves for 2 times of CH3OH, most of the corrosive liquid can be dissolved in the first CH3OH groove, so that the second CH3OH groove is kept pure, and the residual corrosive liquid on the pressure point area is more favorably removed.
4) And after soaking the passivated corrosion piece in CH3OH, putting the passivated corrosion piece into a water flushing tank to be flushed, and then putting the passivated corrosion piece into a spin dryer to spin-dry the piece.
Step 6: removing photoresist after corrosion
And removing the photoresist by using a plasma photoresist remover, finally completing the whole process of PSG passivation corrosion, and finally forming a pressure point area pattern on the PSG passivation layer. As shown in fig. 7.
Different from the prior art, the technical scheme can avoid the problems of blackening and passivation caused by corrosion of the aluminum layer by sequentially corroding in corrosive liquids with different concentrations.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present patent.
Claims (3)
1. A PSG passivation layer pitting corrosion method is characterized by comprising the following steps of putting a PSG passivation corrosion piece into NH 4F: CH3COOH ═ 10: 7, corroding until the PSG thickness of 2000-3000A remains in the pressure point area, and then putting a PSG passivation corrosion piece into NH 4F: CH3COOH ═ 10: 9 until the PSG layer in the pressure point area is completely corroded,
and soaking the PSG passivation layer corrosion piece into a GH3OH solution, finally washing with clear water and drying.
2. The PSG passivation layer pitting method of claim 1, further comprising the step of depositing a 8000A ± 800A PSG passivation layer over the metal dielectric and lithographically forming the desired pattern as an etch mask.
3. The PSG passivation pitting method of claim 2, further comprising the step of etching the pre-etch hard film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911038546.5A CN110993725A (en) | 2019-10-29 | 2019-10-29 | PSG passivation layer pressure point corrosion method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911038546.5A CN110993725A (en) | 2019-10-29 | 2019-10-29 | PSG passivation layer pressure point corrosion method |
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| CN110993725A true CN110993725A (en) | 2020-04-10 |
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| CN201911038546.5A Withdrawn CN110993725A (en) | 2019-10-29 | 2019-10-29 | PSG passivation layer pressure point corrosion method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1062431A (en) * | 1990-12-13 | 1992-07-01 | 国营风光电工厂 | A kind of pressure point corrosive agent and etching technics |
| JPH0897182A (en) * | 1994-09-22 | 1996-04-12 | Mitsumi Electric Co Ltd | Method for etching psg film of semiconductor device |
| CN1281062A (en) * | 2000-08-11 | 2001-01-24 | 中国航天科技集团公司第九研究院七七一研究所 | Corrosive solution of passivated laminated point |
| TWM378377U (en) * | 2009-11-10 | 2010-04-11 | Legend Lifestyle Products Corp | Twisting force testing device |
-
2019
- 2019-10-29 CN CN201911038546.5A patent/CN110993725A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1062431A (en) * | 1990-12-13 | 1992-07-01 | 国营风光电工厂 | A kind of pressure point corrosive agent and etching technics |
| JPH0897182A (en) * | 1994-09-22 | 1996-04-12 | Mitsumi Electric Co Ltd | Method for etching psg film of semiconductor device |
| CN1281062A (en) * | 2000-08-11 | 2001-01-24 | 中国航天科技集团公司第九研究院七七一研究所 | Corrosive solution of passivated laminated point |
| TWM378377U (en) * | 2009-11-10 | 2010-04-11 | Legend Lifestyle Products Corp | Twisting force testing device |
Non-Patent Citations (1)
| Title |
|---|
| 潘桂忠: "《MOS集成电路工艺与制造技术》", 30 June 2012, 上海科学技术出版社 * |
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Application publication date: 20200410 |
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