CN101955852A - Cleaning solution for plasma etching residues - Google Patents
Cleaning solution for plasma etching residues Download PDFInfo
- Publication number
- CN101955852A CN101955852A CN200910054714XA CN200910054714A CN101955852A CN 101955852 A CN101955852 A CN 101955852A CN 200910054714X A CN200910054714X A CN 200910054714XA CN 200910054714 A CN200910054714 A CN 200910054714A CN 101955852 A CN101955852 A CN 101955852A
- Authority
- CN
- China
- Prior art keywords
- scavenging solution
- acid
- guanidine
- class
- fluorochemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title abstract description 24
- 238000001020 plasma etching Methods 0.000 title description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims abstract description 12
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims abstract description 9
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000002000 scavenging effect Effects 0.000 claims description 45
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- 150000002357 guanidines Chemical class 0.000 claims description 8
- -1 trihydroxyethyl Neutral ammonium fluoride Chemical compound 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- 239000003112 inhibitor Substances 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 239000003352 sequestering agent Substances 0.000 claims description 6
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Chemical group 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- 150000003462 sulfoxides Chemical class 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical group CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical group COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- FCEQRBOTYXIORK-UHFFFAOYSA-N 2-(diaminomethylideneamino)benzoic acid Chemical compound NC(=N)NC1=CC=CC=C1C(O)=O FCEQRBOTYXIORK-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 2
- CUBCNYWQJHBXIY-UHFFFAOYSA-N benzoic acid;2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1O CUBCNYWQJHBXIY-UHFFFAOYSA-N 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical class C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 2
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001721 carbon Chemical group 0.000 claims description 2
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 claims description 2
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- DXTIKTAIYCJTII-UHFFFAOYSA-N guanidine acetate Chemical compound CC([O-])=O.NC([NH3+])=N DXTIKTAIYCJTII-UHFFFAOYSA-N 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 2
- 150000003009 phosphonic acids Chemical class 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- 150000003254 radicals Chemical class 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 26
- 239000002184 metal Substances 0.000 abstract description 26
- 239000000203 mixture Substances 0.000 abstract description 7
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 6
- 238000002791 soaking Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 150000002843 nonmetals Chemical class 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 238000011086 high cleaning Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 13
- 230000003628 erosive effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003245 working effect Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3272—Urea, guanidine or derivatives thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- C11D2111/22—
Abstract
The invention discloses cleaning solution, which contains: (a) at least one fluoride; (b) at least one guanidine; (c) at least one solvent; and (d) water. The cleaning solution has high cleaning capability, can simultaneously clean wires, channels and metal pad wafers, simultaneously control the corrosion rates of metals and nonmetals, and maintain the corrosion rates of the metals and the nonmetals stable along with the extension of the service life, has a large operating window, and can be simultaneously suitable for batch soaking type, batch rotary spray type and single-chip rotary type cleaning solution compositions.
Description
Technical field
The present invention relates to a kind of fluorine-containing semi-conductor industry ionic medium etching residual washing liquid.
Background technology
In the semiconductor components and devices manufacturing processed, the coating of photoresist layer, exposure and imaging are necessary process steps to the pattern manufacturing of components and parts.Before last (promptly after coating, imaging, ion implantation and the etching at photoresist layer) of patterning carried out next processing step, the residue of photoresist layer material need thoroughly be removed.Can sclerosis photoresist layer polymkeric substance in doping step intermediate ion bombardment, thus therefore making photoresist layer become to be difficult for dissolving more is difficult to remove.So far the general two-step approach (dry ashing and wet etching) of using is removed this layer photoresistance tunic in semi-conductor industry.The first step utilizes dry ashing to remove the major part of photoresist layer (PR); Second step utilized composite corrosion inhibitor wet etching/cleaning to remove and wash remaining photoresist layer, and its step is generally scavenging solution cleaning/rinsing/rinsed with deionized water.In this process, can only remove residual polymkeric substance photoresist layer and inorganics, and can not attack infringement metal level such as aluminium lamination.
Typical scavenging solution has following several in the prior art: amine scavenging solution (azanol class), semi-aqueous amido (non-azanol class) scavenging solution and fluorochemical based cleaning liquid.Wherein preceding two based cleaning liquids need at high temperature to clean, and generally between 60 ℃ to 80 ℃, have the problem bigger to corrosion of metal speed; Though and existing fluorochemical based cleaning liquid can clean under lower temperature (room temperature to 50 ℃), but still exist various shortcomings, for example can not control the corrosion of metal and non-metallic substrate simultaneously, cause the change of channel characteristics size after the cleaning easily, thereby change semiconductor structure; On the other hand because its big etch-rate, cause the cleaning operation window smaller etc.As US 6,828,289 disclosed cleaning liquid compositions comprise: acidic buffer, organic polar solvent, fluorine-containing material and water, and the pH value is between 3～7, acidic buffer wherein is made up of organic carboxyl acid or polyprotonic acid and pairing ammonium salt, and proportion of composing is between 10: 1 to 1: 10.As US 5,698,503 disclose fluorine-containing scavenging solution, but make spent glycol in a large number, and the viscosity of its scavenging solution and surface tension are all very big, thereby influence cleaning performance.As US 5,972,862 disclose the cleaning combination of fluorine-containing material, and it comprises fluorine-containing material, inorganic or organic acid, quaternary ammonium salt and organic polar solvent, and pH is 7～11, because its cleaning performance is not very stable, have various problem.
Although therefore disclosed some cleaning liquid compositions, but need and need more recently to prepare a class more suitably cleaning combination or system, adapt to new cleaning requirement, more friendly such as environment, low defect level, low etching rate and big action pane and long work-ing life.
Summary of the invention
Technical problem to be solved by this invention is to overcome bigger to corrosion of metal speed that existing scavenging solution exists, can not control the corrosion of metal and non-metallic substrate simultaneously, cause the change and the smaller problem of cleaning operation window of channel characteristics size after the cleaning easily.Provide a kind of cleansing power strong, can clean metal wire (Metal), passage (Via), metal gasket (Pad) wafer simultaneously, can control metal and nonmetallic erosion rate simultaneously, metal and nonmetallic erosion rate keep stable with the prolongation in work-ing life, and have bigger action pane, can be applicable to the cleaning liquid composition of immersion type (wet Batch), batch rotating spraying formula (Batch-spray), monolithic rotary (single wafer tool) in batches simultaneously.
Scavenging solution of the present invention comprises: at least a fluorochemical, at least a guanidine class, at least a solvent and water.
In scavenging solution of the present invention, described fluorochemical preferably is the salt that hydrogen fluoride or hydrogen fluoride and alkali form.It is in ammoniacal liquor, quaternary ammonium hydroxide and the hydramine one or more that described alkali is selected from.
In scavenging solution of the present invention, described fluorochemical preferably is selected from hydrogen fluoride (HF), Neutral ammonium fluoride (NH
4F), ammonium bifluoride (NH
4HF
2), Methanaminium, N,N,N-trimethyl-, fluoride (N (CH
3)
4F) or trihydroxyethyl Neutral ammonium fluoride (N (CH
2OH)
3HF) one or more in.
In scavenging solution of the present invention, described fluorochemical mass percent is 0.1%～20%, and described guanidine class mass percent is 0.1%～20%, and described solvent quality per-cent is 1%～75%; Described quality per-cent is 5%～75%.
In scavenging solution of the present invention, described guanidine class is the material that comprises guanidine radicals.
In scavenging solution of the present invention, described guanidine radicals is that a carbon atom is connected with three nitrogen-atoms, and one of them nitrogen-atoms links to each other all the other two groups that nitrogen-atoms links to each other with carbon with singly-bound with carbon with two keys; Described guanidine radicals structural formula is as follows:
In scavenging solution of the present invention, described guanidine class is selected from Guanidinium carbonate, guanidine acetate, 3-guanidine radicals propionic acid, poly-hexamethyl guanidine and in the guanidinobenzoic acid one or more.
In scavenging solution of the present invention, described solvent is selected from one or more in sulfoxide, sulfone, imidazolidone, pyrrolidone, imidazolone, alcohol, ether and the acid amides.
In scavenging solution of the present invention, described sulfoxide is a dimethyl sulfoxide (DMSO), described sulfone is a tetramethylene sulfone, described imidazolidone is 1,3-dimethyl-2-imidazolidone, described imidazolone is 1, and 3-dimethyl-2-imidazolone, described pyrrolidone are N-Methyl pyrrolidone and/or hydroxyethyl-pyrrolidone; Described acid amides is dimethyl formamide and/or N,N-DIMETHYLACETAMIDE; Described alcohol is propylene glycol and/or Diethylene Glycol; Described ether is propylene glycol monomethyl ether and/or dipropylene glycol monomethyl ether.
In scavenging solution of the present invention, also can comprise additive, described additive is corrosion inhibitor and/or sequestrant.
In scavenging solution of the present invention, described additive mass percent is no more than 20%.
In scavenging solution of the present invention, described corrosion inhibitor is for being selected from benzotriazole, carboxylic acid (ester) class, poly carboxylic acid (ester) class and phosphonic acids (ester) class one or more.
In scavenging solution of the present invention, described etching reagent is selected from benzotriazole, phenylformic acid, polyacrylic acid and 1,3-(hydroxyethyl)-2,4, one or more in the 6-tri methylene phosphonic acid.
In scavenging solution of the present invention, described sequestrant is meant the organic compound that comprises a plurality of functional groups.
In scavenging solution of the present invention, described sequestrant is to be selected from oxyacetic acid, propanedioic acid, citric acid, iminodiethanoic acid, nitrilotriacetic acid(NTA), trolamine, ethylenediamine tetraacetic acid (EDTA), pyrocatechol, gallic acid, Whitfield's ointment, pentamethyl-diethylenetriamine, thionamic acid and the sulphosalicylic acid one or more.
Positive progressive effect of the present invention is: scavenging solution of the present invention can play a role in the bigger scope of temperature, generally in room temperature to 55 ℃ scope, and can be used for very wide field, such as batch immersion type/batch rotary/monolithic is rotary.Simultaneously, cleaning liquid composition has less metal and electric Jie's material etching rate, and keeps stable with the prolongation in work-ing life.
Scavenging solution of the present invention is clean metal and semiconductor fabrication ionic medium etch residue effectively also, and can not corrode SiO
2, ion strengthens tetraethoxysilane silicon-dioxide (PETEOS), silicon, low dielectric material and some metallicses (as Ti, Al, Cu).For semi-conductor industry, cleaning liquid composition of the present invention can use in immersion in batches, batch rotation and monolithic rotary processor.
Description of drawings
Fig. 1 is that the metallic aluminium (Al) of embodiment 15 and nonmetallic ion strengthen tetraethoxysilane silicon-dioxide (PETEOS) erosion rate/duration of service figure.
Embodiment
Further specify content of the present invention below by embodiment.
Table 1 has provided the prescription of scavenging solution embodiment 1～16 of the present invention, simply mixes by listed component and content thereof in the table 1, promptly makes plasma etching residual washing liquid of the present invention.
Table 1 plasma etching residual washing liquid embodiment 1～16
Effect embodiment:
We have selected for use part embodiment in the last table (being embodiment 11-16) to carry out performance test, and so that effect of the present invention to be described, it the results are shown in following table 2.
The rate of metal corrosion testing method of solution:
1) utilize Napson four-point probe instrument to test the resistance initial value (Rs1) of the blank silicon chip of 4*4cm aluminium;
2) the blank silicon chip of this 4*4cm aluminium is immersed in advance in the solution of constant temperature to 40 ℃ 60 minutes;
3) take out the blank silicon chip of this 4*4cm aluminium, use washed with de-ionized water, high pure nitrogen dries up, and utilizes the resistance value (Rs2) of the blank silicon chip of Napson four-point probe instrument test 4*4cm aluminium again;
4) above-mentioned resistance value and soak time are input to suitable procedure and can calculate its erosion rate.
The nonmetal erosion rate testing method of solution:
1) utilize the Nanospec6100 thickness tester to test the thickness (T1) of 4*4cm PETEOS silicon chip;
2) this 4*4cmPETEOS silicon chip is immersed in advance in the solution of constant temperature to 40 ℃ 60 minutes;
3) take out this 4*4cmPETEOS silicon chip, use washed with de-ionized water, high pure nitrogen dries up, and utilizes the thickness (T2) of Nanospec6100 thickness tester test 4*4cmPETEOS silicon chip again;
4) above-mentioned one-tenth-value thickness 1/10 and soak time are input to suitable procedure and can calculate its erosion rate.
The method that wafer cleans:
1) wafer to be cleaned is put in advance the solution of constant temperature to 40 ℃;
2) principle of soaking 30 minutes according to metal wire immersion 20 minutes, passage and metal gasket is soaked wafer;
3) after soak time arrives, take out this wafer, use washed with de-ionized water, after high pure nitrogen dries up; Send SEM test.
The guide look of table 2 part embodiment The performance test results
As can be seen from Table 2: cleaning liquid composition of the present invention during semi-conductor is made used metal (as metallic aluminium) and nonmetal (as PETEOS) can not corrode substantially, its erosion rate all near or less than the semi-conductor industry usually desired 2 dusts/minute.Clean discovery with this solution article on plasma etch residue, its plasma etching residues all is removed, and does not have corroding metal and nonmetal.In order to further specify the stability of examination its metal of scavenging solution of the present invention and nonmetallic erosion rate, i.e. prolongation with duration of service (bathlife) has unconverted situation.The present invention has selected for use embodiment 15 40 ℃ of tests of having carried out 4 days (adding up to 96 hours), and tests the erosion rate that metallic aluminium (Al) and nonmetallic ion during this period strengthen tetraethoxysilane silicon-dioxide (PETEOS), and its result as shown in Figure 1.
As can be seen from Figure 1, scavenging solution of the present invention has less metal and nonmetal etching rate, and keeps stable with the prolongation in work-ing life.
To sum up, scavenging solution cleansing power of the present invention is strong, can clean metal wire (Metal)/passage (Via)/metal gasket (Pad) wafer simultaneously, can control metal and nonmetallic erosion rate simultaneously, and keep stable with the prolongation in work-ing life.
Claims (16)
1. scavenging solution, it comprises: at least a fluorochemical, at least a guanidine class, at least a solvent and water.
2. scavenging solution as claimed in claim 1 is characterized in that: described fluorochemical is selected from the salt that hydrogen fluoride and/or hydrogen fluoride and alkali form.
3. scavenging solution as claimed in claim 2 is characterized in that: it is in ammoniacal liquor, quaternary ammonium hydroxide and the hydramine one or more that described alkali is selected from.
4. scavenging solution as claimed in claim 2 is characterized in that: described fluorochemical is selected from hydrogen fluoride (HF), Neutral ammonium fluoride (NH
4F), ammonium bifluoride (NH
4HF
2), Methanaminium, N,N,N-trimethyl-, fluoride (N (CH
3)
4F) or trihydroxyethyl Neutral ammonium fluoride (N (CH
2OH)
3HF) one or more in.
5. scavenging solution as claimed in claim 1 is characterized in that: described fluorochemical mass percent is 0.1%～20%, and described guanidine class mass percent is 0.1%～20%, and described solvent quality per-cent is 1%～75%; Described quality per-cent is 5%～75%.
6. scavenging solution as claimed in claim 1 is characterized in that: described guanidine class is the material that comprises guanidine radicals.
7. scavenging solution as claimed in claim 6 is characterized in that: described guanidine radicals is that a carbon atom is connected with three nitrogen-atoms, and one of them nitrogen-atoms links to each other all the other two groups that nitrogen-atoms links to each other with carbon with singly-bound with carbon with two keys; Described guanidine radicals structural formula is as follows:
8. scavenging solution as claimed in claim 6 is characterized in that: described guanidine class is selected from Guanidinium carbonate, guanidine acetate, 3-guanidine radicals propionic acid, poly-hexamethyl guanidine and in the guanidinobenzoic acid one or more.
9. scavenging solution as claimed in claim 1 is characterized in that: described solvent is selected from one or more in sulfoxide, sulfone, imidazolidone, pyrrolidone, imidazolone, alcohol, ether and the acid amides.
10. scavenging solution as claimed in claim 9, it is characterized in that: described sulfoxide is a dimethyl sulfoxide (DMSO), described sulfone is a tetramethylene sulfone, described imidazolidone is 1,3-dimethyl-2-imidazolidone, described imidazolone is 1, and 3-dimethyl-2-imidazolone, described pyrrolidone are N-Methyl pyrrolidone and/or hydroxyethyl-pyrrolidone; Described acid amides is dimethyl formamide and/or N,N-DIMETHYLACETAMIDE; Described alcohol is propylene glycol and/or Diethylene Glycol; Described ether is propylene glycol monomethyl ether and/or dipropylene glycol monomethyl ether.
11. scavenging solution as claimed in claim 1 is characterized in that: described scavenging solution also comprises additive, and described additive is corrosion inhibitor and/or sequestrant.
12. scavenging solution as claimed in claim 11 is characterized in that: described additive mass percent is no more than 20%.
13. scavenging solution as claimed in claim 11 is characterized in that: described corrosion inhibitor is selected from one or more in benzotriazole, carboxylic acid (ester) class, poly carboxylic acid (ester) class and phosphonic acids (ester) class.
14. scavenging solution as claimed in claim 11 is characterized in that: described corrosion inhibitor is selected from benzotriazole, phenylformic acid, polyacrylic acid and 1,3-(hydroxyethyl)-2,4, one or more in the 6-tri methylene phosphonic acid.
15. scavenging solution as claimed in claim 11 is characterized in that: described sequestrant is meant the organic compound that comprises a plurality of functional groups.
16. scavenging solution as claimed in claim 11 is characterized in that: described sequestrant is to be selected from oxyacetic acid, propanedioic acid, citric acid, iminodiethanoic acid, nitrilotriacetic acid(NTA), trolamine, ethylenediamine tetraacetic acid (EDTA), pyrocatechol, gallic acid, Whitfield's ointment, pentamethyl-diethylenetriamine, thionamic acid and the sulphosalicylic acid one or more.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054714XA CN101955852A (en) | 2009-07-13 | 2009-07-13 | Cleaning solution for plasma etching residues |
| PCT/CN2010/001037 WO2011006349A1 (en) | 2009-07-13 | 2010-07-12 | Cleaning solution for plasma etching residues |
| KR1020127002630A KR20120068818A (en) | 2009-07-13 | 2010-07-12 | Cleaning solution for plasma etching residues |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054714XA CN101955852A (en) | 2009-07-13 | 2009-07-13 | Cleaning solution for plasma etching residues |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101955852A true CN101955852A (en) | 2011-01-26 |
Family
ID=43448903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910054714XA Pending CN101955852A (en) | 2009-07-13 | 2009-07-13 | Cleaning solution for plasma etching residues |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20120068818A (en) |
| CN (1) | CN101955852A (en) |
| WO (1) | WO2011006349A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102827708A (en) * | 2011-06-16 | 2012-12-19 | 安集微电子（上海）有限公司 | Plasma etching residue cleaning fluid |
| CN102827707A (en) * | 2011-06-16 | 2012-12-19 | 安集微电子科技(上海)有限公司 | Plasma etching residue cleaning fluid |
| WO2012171324A1 (en) * | 2011-06-16 | 2012-12-20 | 安集微电子（上海）有限公司 | Solution for removing plasma etching residue |
| CN107229194A (en) * | 2017-07-25 | 2017-10-03 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application |
| CN107229192A (en) * | 2017-07-25 | 2017-10-03 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application |
| CN107300839A (en) * | 2017-07-25 | 2017-10-27 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application |
| CN111486744A (en) * | 2020-04-14 | 2020-08-04 | 重庆兴勇实业有限公司 | Firearm decoppering agent and preparation method thereof |
| CN117106451A (en) * | 2023-10-24 | 2023-11-24 | 浙江奥首材料科技有限公司 | Low-damage semiconductor silicon etching solution, preparation method and application thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102135187B1 (en) | 2013-12-26 | 2020-07-17 | 동우 화인켐 주식회사 | Photoresist stripper composition |
| CN113430065A (en) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | Anti-reflection coating cleaning and post-etching residue removing composition, preparation method and application |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1575328A (en) * | 2001-10-23 | 2005-02-02 | 高级技术材料公司 | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| CN1904016A (en) * | 2005-06-23 | 2007-01-31 | 气体产品与化学公司 | Composition for removal of residue comprising cationic salts and methods using same |
| CN1966636A (en) * | 2005-11-15 | 2007-05-23 | 安集微电子（上海）有限公司 | Cleaning liquid composition |
| CN101270325A (en) * | 2007-03-23 | 2008-09-24 | 安集微电子（上海）有限公司 | Rinse liquid and uses thereof |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
| CN101290482A (en) * | 2007-04-19 | 2008-10-22 | 安集微电子（上海）有限公司 | Cleaning fluid for cleaning plasma etching residue |
| CN101412948A (en) * | 2007-10-19 | 2009-04-22 | 安集微电子（上海）有限公司 | Cleaning agent for plasma etching residue |
| CN101412949A (en) * | 2007-10-19 | 2009-04-22 | 安集微电子（上海）有限公司 | Cleaning liquid for plasma etching residue |
-
2009
- 2009-07-13 CN CN200910054714XA patent/CN101955852A/en active Pending
-
2010
- 2010-07-12 KR KR1020127002630A patent/KR20120068818A/en not_active Application Discontinuation
- 2010-07-12 WO PCT/CN2010/001037 patent/WO2011006349A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1575328A (en) * | 2001-10-23 | 2005-02-02 | 高级技术材料公司 | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| CN1904016A (en) * | 2005-06-23 | 2007-01-31 | 气体产品与化学公司 | Composition for removal of residue comprising cationic salts and methods using same |
| CN1966636A (en) * | 2005-11-15 | 2007-05-23 | 安集微电子（上海）有限公司 | Cleaning liquid composition |
| CN101270325A (en) * | 2007-03-23 | 2008-09-24 | 安集微电子（上海）有限公司 | Rinse liquid and uses thereof |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
| CN101290482A (en) * | 2007-04-19 | 2008-10-22 | 安集微电子（上海）有限公司 | Cleaning fluid for cleaning plasma etching residue |
| CN101412948A (en) * | 2007-10-19 | 2009-04-22 | 安集微电子（上海）有限公司 | Cleaning agent for plasma etching residue |
| CN101412949A (en) * | 2007-10-19 | 2009-04-22 | 安集微电子（上海）有限公司 | Cleaning liquid for plasma etching residue |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102827708A (en) * | 2011-06-16 | 2012-12-19 | 安集微电子（上海）有限公司 | Plasma etching residue cleaning fluid |
| CN102827707A (en) * | 2011-06-16 | 2012-12-19 | 安集微电子科技(上海)有限公司 | Plasma etching residue cleaning fluid |
| WO2012171324A1 (en) * | 2011-06-16 | 2012-12-20 | 安集微电子（上海）有限公司 | Solution for removing plasma etching residue |
| CN107229194A (en) * | 2017-07-25 | 2017-10-03 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application |
| CN107229192A (en) * | 2017-07-25 | 2017-10-03 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application |
| CN107300839A (en) * | 2017-07-25 | 2017-10-27 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application |
| CN107229192B (en) * | 2017-07-25 | 2019-05-10 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, preparation method and application |
| CN107300839B (en) * | 2017-07-25 | 2019-06-07 | 上海新阳半导体材料股份有限公司 | A kind of fluorine-containing plasma etching residue cleaning, preparation method and application |
| CN111486744A (en) * | 2020-04-14 | 2020-08-04 | 重庆兴勇实业有限公司 | Firearm decoppering agent and preparation method thereof |
| CN111486744B (en) * | 2020-04-14 | 2022-07-22 | 重庆兴勇实业有限公司 | Firearm decoppering agent and preparation method thereof |
| CN117106451A (en) * | 2023-10-24 | 2023-11-24 | 浙江奥首材料科技有限公司 | Low-damage semiconductor silicon etching solution, preparation method and application thereof |
| CN117106451B (en) * | 2023-10-24 | 2024-02-20 | 浙江奥首材料科技有限公司 | Low-damage semiconductor silicon etching solution, preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120068818A (en) | 2012-06-27 |
| WO2011006349A1 (en) | 2011-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102399648B (en) | Fluorine-containing cleaning solution | |
| CN102047184B (en) | Cleaning solution of plasma etching residues | |
| CN101955852A (en) | Cleaning solution for plasma etching residues | |
| CN101412948B (en) | Cleaning agent for plasma etching residue | |
| CN101412949A (en) | Cleaning liquid for plasma etching residue | |
| CN101290482A (en) | Cleaning fluid for cleaning plasma etching residue | |
| CN101827927B (en) | A plasma etching residues cleaning solution | |
| JP2002113431A (en) | Cleaning method | |
| CN102827707A (en) | Plasma etching residue cleaning fluid | |
| CN1966636B (en) | Cleaning liquid composition | |
| CN101666984B (en) | Plasma etching residue cleaning solution | |
| CN101685273B (en) | Cleanout fluid for removing photoresist layer residue | |
| CN101490627B (en) | Compositions for removal of etching residues | |
| KR101572639B1 (en) | Post-cmp washiing liquid composition | |
| CN102827708A (en) | Plasma etching residue cleaning fluid | |
| CN103809394A (en) | Cleaning fluid for removing light-resistance etching residues | |
| TW201311882A (en) | Fluorine-containing cleansing solution | |
| CN102051283B (en) | Hydroxylamine-containing cleaning solution and use thereof | |
| KR20100007461A (en) | Cleaning solution for quartz part and method of cleaning using the same | |
| CN101750913A (en) | Cleaning solution for removing residues on photoresist layer | |
| CN103809392B (en) | Cleaning solution for removing photoresist residues | |
| CN108121175A (en) | A kind of fluorine-containing cleaning solution | |
| TW201300523A (en) | Solution for removing plasma etching residue | |
| CN102968001A (en) | Alkaline cleaning solution | |
| CN103773626A (en) | Low-etching cleaning solution for removing photoresist etching residues |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110126 |
|
| RJ01 | Rejection of invention patent application after publication |