CN1966636B - Cleaning liquid composition - Google Patents
Cleaning liquid composition Download PDFInfo
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- CN1966636B CN1966636B CN2005101103608A CN200510110360A CN1966636B CN 1966636 B CN1966636 B CN 1966636B CN 2005101103608 A CN2005101103608 A CN 2005101103608A CN 200510110360 A CN200510110360 A CN 200510110360A CN 1966636 B CN1966636 B CN 1966636B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 63
- 239000007788 liquid Substances 0.000 title claims description 45
- 239000000203 mixture Substances 0.000 title claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 12
- 150000001412 amines Chemical class 0.000 claims abstract description 12
- 239000003112 inhibitor Substances 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 16
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 239000012964 benzotriazole Substances 0.000 claims description 11
- 150000003863 ammonium salts Chemical class 0.000 claims description 10
- 239000003153 chemical reaction reagent Substances 0.000 claims description 10
- 229960004418 trolamine Drugs 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical group OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 7
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 6
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 6
- 239000013543 active substance Substances 0.000 claims description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 4
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 3
- 229940074391 gallic acid Drugs 0.000 claims description 3
- 235000004515 gallic acid Nutrition 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 125000000656 azaniumyl group Chemical group [H][N+]([H])([H])[*] 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 9
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 8
- 239000005695 Ammonium acetate Substances 0.000 description 8
- 229940043376 ammonium acetate Drugs 0.000 description 8
- 235000019257 ammonium acetate Nutrition 0.000 description 8
- 230000002000 scavenging effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 235000014653 Carica parviflora Nutrition 0.000 description 3
- 241000243321 Cnidaria Species 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention disclosed a kind of cleaning solution compound which includes the following ingredients: solvent, buffer, fluoride, corrosion-inhibitor and water. The characteristic of the invention is that the buffer mentioned before contains weak acid, ammonio substances and amines. The cleaning solution compound in the invention can lower the using temperature with no need to enlarge size of the passage; it can remove the irregular etching and electrolyzing corrosion on the devices without losing the metal or metal oxides; what's more, it can also be used to clean the copper in its producing process.
Description
Technical field
The present invention relates to a kind of cleaning liquid composition, relate in particular to the cleaning liquid composition of the chip manufacturing that is used for unicircuit.
Background technology
In semi-conductor or the semi-conductive manufacturing processed of microcircuit, it is necessary removing material from the semiconductor components and devices substrate surface.At material to be removed in some cases is photoresistance and polymer residues, material to be removed in some cases is the remaining residue of etching or polishing back, or other pollutent, the purpose of cleaning liquid composition is to remove unwanted material on the semiconducter substrate, in order to avoid dissolving of substrate generation burn into or passivation.
Typical scavenging solution has following several in the prior art: amine scavenging solution, semi-aqueous amido (non-azanol class) scavenging solution and fluorochemical based cleaning liquid.Wherein preceding two based cleaning liquids need at high temperature to clean, generally between 65 ℃ to 85 ℃; And existing fluorochemical based cleaning liquid still exists various shortcomings, and for example following patent: US 6,593,282, US 6,828, and 289, US 5,972,862, US 6,592,433 and US 6,773,873 various cleaning liquid compositions are disclosed, as US 6,828,289 disclosed cleaning liquid compositions comprise: acidic buffer, organic polar solvent, fluorine-containing material and water, and the pH value is between 3～7, acidic buffer wherein is made up of with pairing ammonium salt organic carboxyl acid or the acid of poly-alkali, and proportion of composing is between 10: 1 to 1: 10.As US 5,972,862 disclose the cleaning combination of fluorine-containing material, and it comprises that fluorine-containing material, weak acid and weak base such as ammonium salt form damping fluid, organic polar solvent, and pH is 7～11, and cleaning performance is not very effective, has various problem.This based cleaning liquid has higher copper etch-rate usually, can not be used for the copper damascene structure and clean; Simultaneously, cause the change of channel characteristics size after the cleaning easily, thereby change semiconductor structure; Especially have different TEOS (tetraethyl orthosilicate) and BPSG (boron phosphorus silicate glass) etch-rate; In addition, service temperature usually still need be more than room temperature.
Therefore, be necessary to develop novel cleaning liquid composition and solve problems of the prior art.
Summary of the invention
The objective of the invention is provides a kind of cleaning liquid composition in order to address the above problem.
Above-mentioned purpose of the present invention realizes by following technical proposal: cleaning liquid composition of the present invention comprises following component: solvent, buffer reagent, fluorochemical, corrosion inhibitor and water is characterized in that this buffer reagent comprises: weak acid, ammonium class and amine.
In the present invention, described weak acid can be acetic acid and/or citric acid, preferred acetic acid; Described ammonium class can be ammonium acetate, ammonium citrate and/or ammoniacal liquor, preferred ammonium acetate; Described amine can be Monoethanolamine MEA BASF, diethanolamine and/or trolamine, preferred trolamine.
The preferred acetic acid of buffer reagent of the present invention, ammonium acetate and trolamine.
Buffer reagent of the present invention contains the component more than three kinds or three kinds, the component that contains more than three kinds or three kinds can reduce used temperature significantly as buffer reagent, between being reduced to room temperature and 35 ℃ from high temperature of the prior art, can not enlarge simultaneously the size of passage, eliminated uneven etching, metal or metal oxide do not have loss, eliminate the bimatallic corrosion of how much devices, and its Damascus processing procedure that can also be used for copper cleans.
Buffer reagent of the present invention can also play the effect of corrosion inhibitor or corrosion inhibition characteristic, for example some special amine: Monoethanolamine MEA BASF (MEA), diethanolamine (DEA) or trolamine (TEA), and organic acid etc.; Buffer reagent of the present invention can also play the characteristic of tensio-active agent, for example some special amine: Monoethanolamine MEA BASF (MEA), diethanolamine (DEA) or trolamine (TEA) or the like.
Each component concentration of scavenging solution of the present invention all can be with reference to prior art, in a preferred embodiment of the present invention, the concentration of described solvent is 47～88%, the concentration of fluorochemical is 0.05～3%, the concentration of corrosion inhibitor is 0.01～1.5%, the concentration of water is 9.9～40%, and faintly acid concentration is 0.5～4%, the concentration of ammonium class is 0.5～5%, the concentration of amine is 0.1～5%, and above % all refers to account for the weight percent of whole cleaning liquid composition.
In further preferred embodiment of the present invention, the concentration of described solvent is 73%, and the concentration of fluorochemical is 0.4%, and the concentration of corrosion inhibitor is 0.75%, the concentration of water is 21%, and faintly acid concentration is 2%, the concentration of ammonium class is 2.6%, the concentration of amine is 0.25%.
In the present invention, described solvent can be various organic solvents, preferably is dimethyl sulfoxide (DMSO) (DMSO), N,N-DIMETHYLACETAMIDE (DMAC), N-Methyl pyrrolidone (NMP) and/or ethylene glycol, preferred N-Methyl pyrrolidone.
Described fluorochemical preferably is hydrogen fluoride, ammonium bifluoride, Neutral ammonium fluoride, Methanaminium, N,N,N-trimethyl-, fluoride (TMAF) and/or organic fluorine.
Described corrosion inhibitor preferably is benzotriazole (BTA), benzotriazole derivative, gallic acid, pyrocatechol and/or benzene class.
The pH of cleaning liquid composition of the present invention preferably is 3.0～5.8.
Cleaning liquid composition of the present invention can also comprise tensio-active agent and/or complexing agent.Described tensio-active agent can be various tensio-active agents of the prior art, and described complexing agent also can be various complexing agents.
Positive progressive effect of the present invention is: 1) use cleaning liquid composition of the present invention can reduce use temperature, can use between room temperature to 35 ℃; 2),, and can eliminate different oxide etch speed and cause the etching unevenness so the fluorochemical in the scavenging solution of the present invention can not enlarge the size of passage because of three kinds of compositions being arranged as buffer reagent; 3) behind the use scavenging solution of the present invention, the ratio of defects on the wafer surface is reduced; 4) it especially helps to prevent the electrolytic corrosion of little how much components and parts; 5) its Damascus processing procedure that can be used for copper cleans, because the etch-rate of dielectric materials can be ignored.
Description of drawings
Fig. 1 is the SEM figure of silicon chip before cleaning;
Fig. 2 is the SEM figure of silicon chip cleaning after 4 minutes;
Fig. 3 is the SEM figure of silicon chip cleaning after 6 minutes;
Fig. 4 is the SEM figure of silicon chip cleaning after 8 minutes;
Fig. 5 is the surperficial SEM figure of relevant passage in the silicon chip before cleaning;
Fig. 6 is for cleaning the surperficial SEM figure of relevant passage in the silicon chip of back;
Fig. 7 is the section SEM figure of relevant passage in the silicon chip before cleaning;
Fig. 8 is for cleaning the section SEM figure of relevant passage in the silicon chip of back;
Fig. 9 uses cleaning liquid composition of the present invention when cleaning for 40 ℃, the etch-rate behavior figure of CORAL film;
Figure 10 uses cleaning liquid composition of the present invention when cleaning for 40 ℃, the etch-rate behavior figure of bpsg film;
Figure 11 uses cleaning liquid composition of the present invention when cleaning for 40 ℃, the etch-rate behavior figure of silicon dioxide film.
Embodiment
Embodiment 1
The component of cleaning liquid composition 1: N-Methyl pyrrolidone 73wt%, acetic acid 2wt%, ammonium acetate 2.6wt%, trolamine 0.25wt%, water 21wt%, Neutral ammonium fluoride 0.4wt%, benzotriazole (BTA) 0.75wt%, pH is 5.2.
The component of cleaning liquid composition 2: dimethyl sulfoxide (DMSO) 70wt%, acetic acid 2wt%, ammonium acetate 2.6wt%, diethanolamine 0.25wt%, water 21.4wt%, Neutral ammonium fluoride 3wt%, benzotriazole (BTA) 0.75wt%, pH is 5.2.
Embodiment 3
The component of cleaning liquid composition 3: N-Methyl pyrrolidone 73wt%, citric acid 1.3wt%, ammonium hydroxide 0.5wt%, trolamine 0.25wt%, water 23.4wt%, ammonium bifluoride 0.05wt%, benzotriazole 1.5wt%, pH are 3.2.
Embodiment 4
The component of cleaning liquid composition 4: N,N-DIMETHYLACETAMIDE 87.4wt%, acetic acid 0.5wt%, ammonium acetate 0.6wt%, Monoethanolamine MEA BASF 0.2wt%, water 9.9wt%, Methanaminium, N,N,N-trimethyl-, fluoride 0.4wt%, benzotriazole 1.0wt%, pH are 5.2.
Embodiment 5
The component of cleaning liquid composition 5: dimethyl sulfoxide (DMSO) 76.04wt%, citric acid 1.3wt%, ammonium hydroxide 0.5wt%, trolamine 0.25wt%, water 20.81wt%, Methanaminium, N,N,N-trimethyl-, fluoride 1wt%, gallic acid 0.01wt%, ethylenediamine tetraacetic acid (EDTA) 0.09%, pH are 3.2.
The component of cleaning liquid composition 6: ethylene glycol 47.05wt%, acetic acid 3.85wt%, ammonium acetate 5wt%, diethanolamine 0.1wt%, water 39.8wt%, hydrogen fluoride 0.4wt%, pyrocatechol 1.3wt%, polyacrylic acid 2.5%, pH are 5.2.
The component of cleaning liquid composition 7: N-Methyl pyrrolidone 68.25wt%, acetic acid 2wt%, ammonium acetate 2.6wt%, trolamine 5wt%, water 21wt%, Neutral ammonium fluoride 0.4wt%, benzotriazole (BTA) 0.75wt%, pH is 5.8.
Effect embodiment 1
One silicon chip that is etched with metal wire is divided into some, takes out 4 immediately, wherein 3 are at room temperature cleaned with above-mentioned cleaning liquid composition 1 respectively, and cleaning temperature is 35 ℃, and scavenging period was respectively 4 minutes, 6 minutes, 8 minutes.
Electron microscope observation is the result show: after using cleaning liquid composition of the present invention, the metallic surface no significant defect, shown in Fig. 2～4, residue is removed entirely, with compare before Fig. 1 cleans, clean the loss of the metal behind 4 minutes (Fig. 2), 6 minutes (Fig. 3), 8 minutes (Fig. 4) and can ignore.
One silicon chip that is etched with plug is divided into some, takes out at random wherein that 2 silicon chips clean with above-mentioned cleaning liquid composition 1 respectively at 35 ℃, scavenging period is 8 minutes.
Electron microscope observation is the result show: with clean before the wafer surface of (as Fig. 5) compare, use the metallic surface no significant defect of (as Fig. 6) behind the cleaning liquid composition of the present invention; And from the section microscope figure of silicon chip as can be seen, with clean before (as Fig. 7) compare, the channel size that cleans in the silicon chip of back (as Fig. 8) does not change, and the residue in the passage after cleaning is removed entirely.
Effect embodiment 3
Test respectively cleaning liquid composition 1 in the time of 40 ℃ to CORAL (the low-dielectric material that U.S. Novellus Systems Inc. provides) film, the etch rate of TEOS (tetraethyl orthosilicate) film and BPSG (boron phosphorus silicate glass) film.
The result shows: use cleaning liquid composition of the present invention, the etch-rate of CORAL film can ignore (as Fig. 9), the etch-rate of TEOS film (as Figure 10) is 1: 1.04 o'clock with the etch-rate (as Figure 11) of bpsg film, does not have uneven oxide etch to exist in the passage.
Claims (7)
1. cleaning liquid composition, it comprises following component: solvent, buffer reagent, fluorochemical, corrosion inhibitor and water, this buffer reagent comprises: weak acid, ammonium class and amine; It is characterized in that: described weak acid is citric acid; Described ammonium class is ammonium citrate and/or ammoniacal liquor; Described amine is diethanolamine and/or trolamine, wherein: the concentration of described solvent is 47～88%, the concentration of fluorochemical is 0.05～3%, the concentration of corrosion inhibitor is 0.01～1.5%, the concentration of water is 9.9～40%, faintly acid concentration is 0.5～4%, the concentration of ammonium class is 0.5～5%, the concentration of amine is 0.1～5%, and above-mentioned per-cent all refers to account for the weight percent of whole cleaning liquid composition.
2. cleaning liquid composition according to claim 1, it is characterized in that: the concentration of described solvent is 73%, the concentration of fluorochemical is 0.4%, the concentration of corrosion inhibitor is 0.75%, the concentration of water is 21%, faintly acid concentration is 2%, the concentration of ammonium class is 2.6%, the concentration of amine is 0.25%, and above-mentioned per-cent all refers to account for the weight percent of whole cleaning liquid composition.
3. cleaning liquid composition according to claim 1 is characterized in that: described solvent is dimethyl sulfoxide (DMSO), N,N-DIMETHYLACETAMIDE, N-Methyl pyrrolidone and/or ethylene glycol.
4. cleaning liquid composition according to claim 1 is characterized in that: described fluorochemical is hydrogen fluoride, ammonium bifluoride, Neutral ammonium fluoride, Methanaminium, N,N,N-trimethyl-, fluoride and/or organic fluorine.
5. cleaning liquid composition according to claim 1 is characterized in that: described corrosion inhibitor is benzotriazole, gallic acid, pyrocatechol and/or benzene.
6. cleaning liquid composition according to claim 1 is characterized in that: the pH of this cleaning liquid composition is 3.0～5.8.
7. cleaning liquid composition according to claim 1 is characterized in that: this cleaning liquid composition also comprises tensio-active agent and/or complexing agent.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005101103608A CN1966636B (en) | 2005-11-15 | 2005-11-15 | Cleaning liquid composition |
| PCT/CN2006/002621 WO2007056919A1 (en) | 2005-11-15 | 2006-10-08 | Aqueous cleaning composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005101103608A CN1966636B (en) | 2005-11-15 | 2005-11-15 | Cleaning liquid composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1966636A CN1966636A (en) | 2007-05-23 |
| CN1966636B true CN1966636B (en) | 2011-08-03 |
Family
ID=38048280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005101103608A Expired - Fee Related CN1966636B (en) | 2005-11-15 | 2005-11-15 | Cleaning liquid composition |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1966636B (en) |
| WO (1) | WO2007056919A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109294152A (en) * | 2018-09-05 | 2019-02-01 | 浙江畅通科技有限公司 | A kind of high strength heat resistant lead-acid battery plastic housing and preparation method thereof |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101412948B (en) * | 2007-10-19 | 2012-05-16 | 安集微电子（上海）有限公司 | Cleaning agent for plasma etching residue |
| CN101412950A (en) * | 2007-10-19 | 2009-04-22 | 安集微电子（上海）有限公司 | Cleaning liquid for plasma etching residue |
| CN101597548A (en) * | 2008-06-06 | 2009-12-09 | 安集微电子科技(上海)有限公司 | A kind of plasma etching residual washing liquid |
| CN101463295B (en) * | 2008-11-28 | 2011-08-17 | 江苏海迅实业集团股份有限公司 | Cleaning agent for semiconductor industry |
| CN101955852A (en) * | 2009-07-13 | 2011-01-26 | 安集微电子（上海）有限公司 | Cleaning solution for plasma etching residues |
| CN104419563A (en) * | 2013-08-23 | 2015-03-18 | 南通恒鼎重型机床有限公司 | Special cleaner for wiping conveyor belt |
| CN104213144A (en) * | 2014-09-20 | 2014-12-17 | 常熟市天河机械设备制造有限公司 | Bearing cleaning agent |
| CN109976110A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of cleaning solution |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302327A (en) * | 1999-01-27 | 2001-07-04 | 阿什兰公司 | Acidic composition containing fluoride for removal of photoresists and etch residues |
| CN1479780A (en) * | 2000-12-07 | 2004-03-03 | ��ʲ | Method for cleaning etcher parts |
| US6821352B2 (en) * | 2002-07-10 | 2004-11-23 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
-
2005
- 2005-11-15 CN CN2005101103608A patent/CN1966636B/en not_active Expired - Fee Related
-
2006
- 2006-10-08 WO PCT/CN2006/002621 patent/WO2007056919A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302327A (en) * | 1999-01-27 | 2001-07-04 | 阿什兰公司 | Acidic composition containing fluoride for removal of photoresists and etch residues |
| CN1479780A (en) * | 2000-12-07 | 2004-03-03 | ��ʲ | Method for cleaning etcher parts |
| US6821352B2 (en) * | 2002-07-10 | 2004-11-23 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| CN1665755A (en) * | 2002-07-10 | 2005-09-07 | 空气产品及化学制品股份有限公司 | Compositions for removing etching residue and use thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109294152A (en) * | 2018-09-05 | 2019-02-01 | 浙江畅通科技有限公司 | A kind of high strength heat resistant lead-acid battery plastic housing and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1966636A (en) | 2007-05-23 |
| WO2007056919A1 (en) | 2007-05-24 |
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