CN101412949A - Cleaning liquid for plasma etching residue - Google Patents
Cleaning liquid for plasma etching residue Download PDFInfo
- Publication number
- CN101412949A CN101412949A CNA2007100472661A CN200710047266A CN101412949A CN 101412949 A CN101412949 A CN 101412949A CN A2007100472661 A CNA2007100472661 A CN A2007100472661A CN 200710047266 A CN200710047266 A CN 200710047266A CN 101412949 A CN101412949 A CN 101412949A
- Authority
- CN
- China
- Prior art keywords
- plasma etching
- ether
- washing liquid
- residual washing
- etching residual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 24
- 239000007788 liquid Substances 0.000 title claims description 24
- 238000004140 cleaning Methods 0.000 title abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 20
- 150000001412 amines Chemical class 0.000 claims abstract description 17
- 239000002904 solvent Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- -1 trihydroxyethyl Neutral ammonium fluoride Chemical compound 0.000 claims description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 6
- 150000003462 sulfoxides Chemical class 0.000 claims description 6
- 229920000768 polyamine Polymers 0.000 claims description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 5
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229960004063 propylene glycol Drugs 0.000 claims description 4
- 235000013772 propylene glycol Nutrition 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 3
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 3
- 229960004418 trolamine Drugs 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- CFQPVBJOKYSPKG-UHFFFAOYSA-N 1,3-dimethylimidazol-2-one Chemical group CN1C=CN(C)C1=O CFQPVBJOKYSPKG-UHFFFAOYSA-N 0.000 claims description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical group NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 2
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 claims description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000007654 immersion Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 239000003599 detergent Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000002000 scavenging effect Effects 0.000 description 26
- 230000003628 erosive effect Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- CBOIHMRHGLHBPB-UHFFFAOYSA-N hydroxymethyl Chemical compound O[CH2] CBOIHMRHGLHBPB-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C11D2111/22—
Abstract
The invention discloses a plasma etching remainder detergent, which contains fluoride, organic amine, a solvent and water. The detergent has strong washing capability, can effectively remove plasma etching remainder on a metal wire (Metal), a channel (Via) and a metal pad (Pad) wafer, has smaller etching speed to non-metal materials (such as SiO2, ion enhanced tetraethoxy silane silicon dioxide (PETEOS), silicon, low dielectric material and the like), partial metal materials (such as Ti, Al and Cu) and so on, can be used for batch immersion type cleaning mode, batch rotation spray type cleaning mode and uniwafer rotation type cleaning mode, has larger operation window, and has excellent application prospect in semiconductor wafer cleaning and other micro-electronic fields.
Description
Technical field
The present invention relates to a kind of scavenging solution in the semiconductor fabrication process, be specifically related to a kind of plasma etching residual washing liquid.
Background technology
In the semiconductor components and devices manufacturing processed, the coating of photoresist layer, exposure and imaging are necessary process steps to the pattern manufacturing of components and parts.Before last (promptly after coating, imaging, ion implantation and the etching at photoresist layer) of patterning carried out next processing step, the residue of photoresist layer material need thoroughly be removed.Can sclerosis photoresist layer polymkeric substance in doping step intermediate ion bombardment, thus therefore making photoresist layer become to be difficult for dissolving more is difficult to remove.So far the general two-step approach (dry ashing and wet etching) of using is removed this layer photoresistance tunic in semi-conductor industry.The first step utilizes dry ashing to remove the major part of photoresist layer (PR).Second step utilized composite corrosion inhibitor wet etching/cleaning to remove remaining photoresist layer, and its concrete steps are generally scavenging solution cleaning/rinsing/rinsed with deionized water.In this process, can only remove residual polymkeric substance photoresist layer and inorganics, and can not attack infringement metal level (as aluminium lamination).
Typical scavenging solution has following several in the prior art: amine scavenging solution, semi-aqueous amido (non-azanol class) scavenging solution and fluorochemical based cleaning liquid.Wherein, preceding two based cleaning liquids need at high temperature to clean, and generally between 60 ℃ to 80 ℃, have the problem bigger to corrosion of metal speed.Though and existing fluorochemical based cleaning liquid can clean under lower temperature (room temperature to 50 ℃), but still exists various shortcomings.For example, can not control the corrosion of metal and non-metallic substrate simultaneously, cause the change of channel characteristics size after the cleaning easily, thereby change semiconductor structure; Etch-rate is bigger, makes the cleaning operation window smaller etc.
US 6,828,289 disclosed cleaning liquid compositions comprise: acidic buffer, organic polar solvent, fluorine-containing material and water, and the pH value is between 3～7, acidic buffer wherein is made up of organic carboxyl acid or polyprotonic acid and pairing ammonium salt, and proportion of composing is between the 10:1 to 1:10.US 5,698, and 503 disclose fluorine-containing scavenging solution, but make spent glycol in a large number, and the viscosity of its scavenging solution and surface tension are all very big, thereby influence cleaning performance.US 5,972, and 862 disclose the cleaning combination of fluorine-containing material, and it comprises fluorine-containing material, inorganic or organic acid, quaternary ammonium salt and organic polar solvent, and pH is 7～11, because its cleaning performance is not very stable, have various problem.
Therefore, in order to overcome the defective of existing scavenging solution, adapt to new cleaning requirement, more friendly such as environment, low defect level, low etching rate and big action pane etc. demand seeking new scavenging solution urgently.
Summary of the invention
Technical problem to be solved by this invention is to exist erosion rate big in order to overcome existing plasma etching residual washing liquid, can not control metal and nonmetallic corrosion simultaneously, clean window is little, cleansing power deficiency and cleaning performance instability or the like defective, and a kind of stronger cleansing power that has is provided, and erosion rate is little, can control metal and nonmetallic corrosion simultaneously, clean window is big, the plasma etching residual washing liquid that cleaning performance is stable.
Plasma etching residual washing liquid of the present invention contains fluorochemical, organic amine, solvent and water.
Wherein, the salt that is selected from hydrogen fluoride or hydrogen fluoride and alkali formation that described fluorochemical is preferable, preferred fluorinated hydrogen (HF), Neutral ammonium fluoride (NH
4F), ammonium bifluoride (NH
4HF
2), Methanaminium, N,N,N-trimethyl-, fluoride (N (CH
3)
4F) and trihydroxyethyl Neutral ammonium fluoride (N (CH2OH)
3HF) one or more in.Described alkali is preferable is selected from ammoniacal liquor, quaternary ammonium hydroxide and hydramine.What the content of described fluorochemical was preferable is mass percent 0.01～20%.
Wherein, described organic amine is preferable is in the organic amine of hydroxyl, amino and carboxyl one or more.What the organic amine of described hydroxyl was preferable is hydramine, as thanomin, diethanolamine, trolamine, Yi Bingchunan, N, and N-dimethylethanolamine and N methyldiethanol amine; Described contain amino organic amine preferable be organic polyamine, as diethylenetriamine, pentamethyl-diethylenetriamine and polyethylene polyamine; What described carboxylic organic amine was preferable is to contain amino organic acid, as 2-Padil, 2-benzaminic acid, iminodiethanoic acid, and nitrilotriacetic acid(NTA) and ethylenediamine tetraacetic acid (EDTA).Wherein, be more preferably in pentamethyl-diethylenetriamine, iminodiethanoic acid and the trolamine one or more.What the content of described organic amine was preferable is mass percent 0.1～35%.The existence of organic amine helps the pH value stabilization, improves the stability and the circulation ratio of cleaning process.
Wherein, described preferred solvents is in sulfoxide, sulfone, imidazolidone, pyrrolidone, imidazolone, acid amides and the ether one or more.Described sulfoxide is preferable is in dimethyl sulfoxide (DMSO), diethyl sulfoxide and the first and second basic sulfoxides one or more; Described sulfone is preferable is in methyl sulfone, ethyl sulfone and the tetramethylene sulfone one or more; What described imidazolidone was preferable is 2-imidazolidone, 1,3-dimethyl-2-imidazolidone and 1, one or more in 3-diethyl-2-imidazolidone; Described pyrrolidone is preferable is in N-Methyl pyrrolidone, N-ethyl pyrrolidone, N-cyclohexyl pyrrolidone and the N-hydroxyethyl-pyrrolidone one or more; What described imidazolone was preferable is 1,3-dimethyl-2-imidazolone; What described acid amides was preferable is dimethyl formamide and/or N,N-DIMETHYLACETAMIDE; Described ether is preferable is in ethylene glycol monoalkyl ether, Diethylene Glycol monoalky lether, propylene-glycol monoalky lether, dipropylene glycol monoalky lether and the tripropylene glycol monoalky lether one or more.Wherein, described ethylene glycol monoalkyl ether is preferable is in ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and the ethylene glycol monobutyl ether one or more; Described Diethylene Glycol monoalky lether is preferable is in diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and the diethylene glycol monobutyl ether one or more; Described propylene-glycol monoalky lether is preferable is in propylene glycol monomethyl ether, dihydroxypropane single-ether and the propylene glycol monobutyl ether one or more; Described dipropylene glycol monoalky lether is preferable is in dipropylene glycol monomethyl ether, dipropylene glycol list ether and the dipropylene glycol monobutyl ether one or more; What described tripropylene glycol monoalky lether was preferable is the tripropylene glycol monomethyl ether.What the content of described solvent was preferable is mass percent 35～80%.
What wherein, the content of described water was preferable is mass percent 10～45%.
Scavenging solution of the present invention also can comprise other this area conventional additives, as anticolodal (as the sanitas of copper: benzotriazole; The sanitas of aluminium and for example: polyacrylic acid).
Scavenging solution of the present invention simply mixes and can make through mentioned component.Scavenging solution of the present invention can use in bigger temperature range, generally in room temperature to 55 ℃ scope, and can be applicable to various cleaning ways, as the batch immersion type, batch is rotary and monolithic is rotary.Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: scavenging solution cleansing power of the present invention is strong, can clean metal wire (Metal), passage (Via) and metal gasket (Pad) wafer, effectively removes plasma etching residues, and to non-metallic material (as SiO
2, ion strengthens tetraethoxysilane silicon-dioxide (PETEOS), silicon and low dielectric material etc.) and metallic substance (as Ti, Al and Cu) etc. less erosion rate is arranged, can control metal and nonmetallic corrosion simultaneously.In addition, scavenging solution of the present invention has big action pane applicable to the cleaning way of batch immersion type (wetBatch), batch rotating spraying formula (Batch-spray) and monolithic rotary (single wafer tool).
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～31
Table 1 has provided the embodiment 1～31 of plasma etching residual washing liquid of the present invention, by prescription in the table, each component is mixed, and can make the scavenging solution of each embodiment.
Table 1 plasma etching residual washing liquid 1～31 of the present invention
Effect embodiment
Table 2 has provided the prescription of scavenging solution 1 of the present invention and 2.According to table 2 prescription, the simple uniform mixing of each composition can be made each scavenging solution.
Table 2 scavenging solution 1 of the present invention and 2 prescription and cleaning performance and erosion rate
Scavenging solution 1 and 2 pairs of metal wires, passage and metal gaskets are cleaned, and test the erosion rate of each scavenging solution metallic aluminium and nonmetal (PETEOS).
The rate of metal corrosion testing method of scavenging solution:
1) utilize Napson four-point probe instrument to test the resistance initial value (Rs1) of the blank silicon chip of 4*4cm aluminium;
2) the blank silicon chip of this 4*4cm aluminium is immersed in advance in the solution of constant temperature to 35 ℃ 30 minutes;
3) take out the blank silicon chip of this 4*4cm aluminium, use washed with de-ionized water, high pure nitrogen dries up, and utilizes the resistance value (Rs2) of the blank silicon chip of Napson four-point probe instrument test 4*4cm aluminium again;
4) repeated for the second and the 3rd step and test once, resistance value is designated as Rs3;
5) above-mentioned resistance value and soak time are input to suitable procedure and can calculate its erosion rate.
The nonmetal erosion rate testing method of scavenging solution:
1) utilize the Nanospec6100 thickness tester to test the thickness (T1) of 4*4cm PETEOS silicon chip;
2) this 4*4cmPETEOS silicon chip is immersed in advance in the solution of constant temperature to 35 ℃ 30 minutes;
3) take out this 4*4cmPETEOS silicon chip, use washed with de-ionized water, high pure nitrogen dries up, and utilizes the thickness (T2) of Nanospec6100 thickness tester test 4*4cmPETEOS silicon chip again;
4) the second and the 3rd step of repetition tests a thickness again and is designated as T3;
5) above-mentioned one-tenth-value thickness 1/10 and soak time are input to suitable procedure and can calculate its erosion rate.
Table 3 has provided the prescription of scavenging solution 1 of the present invention and 2, and cleaning performance and erosion rate.
Table 3 scavenging solution 1 of the present invention and 2 cleaning performance and erosion rate
As can be seen from Table 3: scavenging solution of the present invention during semi-conductor is made used metal (as metallic aluminium) and nonmetal (as PETEOS) can not corrode substantially, its erosion rate all near or less than the common desired 2 dust per minutes of semi-conductor industry.Clean discovery with the scavenging solution article on plasma etch residue in the table 2, its plasma etching residues all is removed, and does not have corroding metal and nonmetal substantially.
Claims (12)
1. a plasma etching residual washing liquid is characterized in that containing: fluorochemical, organic amine, solvent and water.
2. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: described fluorochemical is selected from one or more in hydrogen fluoride, Neutral ammonium fluoride, ammonium bifluoride, Methanaminium, N,N,N-trimethyl-, fluoride and the trihydroxyethyl Neutral ammonium fluoride.
3. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the content of described fluorochemical is mass percent 0.01～20%.
4. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: described organic amine is one or more in the organic amine of hydroxyl, amino and carboxyl.
5. plasma etching residual washing liquid as claimed in claim 4 is characterized in that: the organic amine of described hydroxyl is a hydramine; The described organic amine that contains amino is an organic polyamine; Described carboxylic organic amine is to contain amino organic acid.
6. plasma etching residual washing liquid as claimed in claim 5 is characterized in that: described hydramine is thanomin, diethanolamine, trolamine, Yi Bingchunan, N, one or more in N-dimethylethanolamine and the N methyldiethanol amine; Described organic polyamine is one or more in diethylenetriamine, pentamethyl-diethylenetriamine and the polyethylene polyamine; The described organic acid that contains amino is one or more in 2-Padil, 2-benzaminic acid, iminodiethanoic acid, nitrilotriacetic acid(NTA) and the ethylenediamine tetraacetic acid (EDTA).
7. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the content of described organic amine is mass percent 0.1～35%.
8. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: described solvent is one or more in sulfoxide, sulfone, imidazolidone, pyrrolidone, imidazolone, acid amides and the ether.
9. plasma etching residual washing liquid as claimed in claim 8 is characterized in that: described sulfoxide is one or more in dimethyl sulfoxide (DMSO), diethyl sulfoxide and the first and second basic sulfoxides; Described sulfone is one or more in methyl sulfone, ethyl sulfone and the tetramethylene sulfone; Described imidazolidone is a 2-imidazolidone, 1,3-dimethyl-2-imidazolidone and 1, one or more in 3-diethyl-2-imidazolidone; Described pyrrolidone is one or more in N-Methyl pyrrolidone, N-ethyl pyrrolidone, N-cyclohexyl pyrrolidone and the N-hydroxyethyl-pyrrolidone; Described imidazolone is 1,3-dimethyl-2-imidazolone; Described acid amides is dimethyl formamide and/or N,N-DIMETHYLACETAMIDE; Described ether is one or more in ethylene glycol monoalkyl ether, Diethylene Glycol monoalky lether, propylene-glycol monoalky lether, dipropylene glycol monoalky lether and the tripropylene glycol monoalky lether.
10. plasma etching residual washing liquid as claimed in claim 9 is characterized in that: described ethylene glycol monoalkyl ether is one or more in ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and the ethylene glycol monobutyl ether; Described Diethylene Glycol monoalky lether is one or more in diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and the diethylene glycol monobutyl ether; Described propylene-glycol monoalky lether is one or more in propylene glycol monomethyl ether, dihydroxypropane single-ether and the propylene glycol monobutyl ether; Described dipropylene glycol monoalky lether is one or more in dipropylene glycol monomethyl ether, dipropylene glycol list ether and the dipropylene glycol monobutyl ether; Described tripropylene glycol monoalky lether is the tripropylene glycol monomethyl ether.
11. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the content of described solvent is mass percent 35～80%.
12. plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the content of described water is mass percent 10～45%.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100472661A CN101412949A (en) | 2007-10-19 | 2007-10-19 | Cleaning liquid for plasma etching residue |
| PCT/CN2008/001757 WO2009052706A1 (en) | 2007-10-19 | 2008-10-20 | A rinse solution for removal of plasm etching residues |
| CN200880113046A CN101827926A (en) | 2007-10-19 | 2008-10-20 | A rinse solution for removal of plasm etching residues |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100472661A CN101412949A (en) | 2007-10-19 | 2007-10-19 | Cleaning liquid for plasma etching residue |
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| CN101412949A true CN101412949A (en) | 2009-04-22 |
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| CNA2007100472661A Pending CN101412949A (en) | 2007-10-19 | 2007-10-19 | Cleaning liquid for plasma etching residue |
| CN200880113046A Pending CN101827926A (en) | 2007-10-19 | 2008-10-20 | A rinse solution for removal of plasm etching residues |
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| CN200880113046A Pending CN101827926A (en) | 2007-10-19 | 2008-10-20 | A rinse solution for removal of plasm etching residues |
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| WO (1) | WO2009052706A1 (en) |
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| WO2010025624A1 (en) * | 2008-09-05 | 2010-03-11 | 安集微电子科技(上海)有限公司 | Rinse solution for removal of plasm etching residues |
| CN101955852A (en) * | 2009-07-13 | 2011-01-26 | 安集微电子（上海）有限公司 | Cleaning solution for plasma etching residues |
| CN105217564B (en) * | 2014-06-03 | 2017-02-15 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues on MEMS (Micro-Electro-Mechanical Systems) welding pad |
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| US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) * | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| JP2001100436A (en) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | Resist removing solution composition |
| EP1381656B1 (en) * | 2001-03-27 | 2010-11-10 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| CN1938412A (en) * | 2003-12-02 | 2007-03-28 | 高级技术材料公司 | Resist, BARC and gap fill material stripping chemical and method |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
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2007
- 2007-10-19 CN CNA2007100472661A patent/CN101412949A/en active Pending
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- 2008-10-20 WO PCT/CN2008/001757 patent/WO2009052706A1/en active Application Filing
- 2008-10-20 CN CN200880113046A patent/CN101827926A/en active Pending
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| CN101955852A (en) * | 2009-07-13 | 2011-01-26 | 安集微电子（上海）有限公司 | Cleaning solution for plasma etching residues |
| CN105217564B (en) * | 2014-06-03 | 2017-02-15 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues on MEMS (Micro-Electro-Mechanical Systems) welding pad |
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| CN108121175B (en) * | 2016-11-29 | 2021-02-02 | 安集微电子科技（上海）股份有限公司 | Fluorine-containing cleaning solution |
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| Publication number | Publication date |
|---|---|
| CN101827926A (en) | 2010-09-08 |
| WO2009052706A1 (en) | 2009-04-30 |
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