CN115083909A - Nickel corrosion method for preparing semiconductor electrode - Google Patents

Nickel corrosion method for preparing semiconductor electrode Download PDF

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Publication number
CN115083909A
CN115083909A CN202110280158.9A CN202110280158A CN115083909A CN 115083909 A CN115083909 A CN 115083909A CN 202110280158 A CN202110280158 A CN 202110280158A CN 115083909 A CN115083909 A CN 115083909A
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nickel
wafer
film
semiconductor electrode
etching method
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孙俊敏
刘瑞
吴昊
韩立群
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State Grid Corp of China SGCC
Global Energy Interconnection Research Institute
Dezhou Power Supply Co of State Grid Shandong Electric Power Co Ltd
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State Grid Corp of China SGCC
Global Energy Interconnection Research Institute
Dezhou Power Supply Co of State Grid Shandong Electric Power Co Ltd
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Priority to CN202110280158.9A priority Critical patent/CN115083909A/en
Publication of CN115083909A publication Critical patent/CN115083909A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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Abstract

The invention discloses a nickel corrosion method used in the preparation of a semiconductor electrode, which comprises the following steps: forming a film on the wafer by nickel and annealing at high temperature; selectively removing the nickel film on the wafer; the technical scheme provided by the invention effectively removes nickel on the surface of the oxide film, keeps the contact position of the nickel and the wafer without corroding the oxide film, meets the strict requirement of an ohmic contact process on corrosion, and has simple operation steps.

Description

Nickel corrosion method for preparing semiconductor electrode
Technical Field
The invention belongs to the field of semiconductor device process preparation, and particularly relates to a nickel corrosion method for preparing a semiconductor electrode.
Background
Nickel metal is commonly used in semiconductor electrode fabrication, and the process for preparing the electrode generally includes nickel film formation (evaporation, sputtering or electroplating), annealing (alloying), etching (photolithography), and the like. Since nickel is a metal which is very easy to oxidize, the electrical contact resistance is easy to deviate, and the requirements of annealing process and corrosion process are very strict in order to avoid or reduce oxidation, the management and control difficulty in mass production is very high. Low resistance, stable contact ohmic contacts are key factors affecting the performance and stability of integrated circuits. The corrosion process plays an important role in the electrode manufacturing process, so the proportion of the corrosion liquid and the corrosion method directly influence the corrosion effect of the nickel.
The traditional process of the nickel ohmic contact comprises the following steps: etching nickel after nickel film forming and photoetching to finish nickel pattern and annealing; the other method comprises the steps of film forming by photoetching nickel, stripping, nickel patterning and annealing. To add a process step, contamination and introduction of primary particles, to simplify the steps and reduce the cost, some production lines try another ohmic contact process: nickel film forming, annealing, corrosion, removing the nickel film on the surface of the oxide film, and reserving the nickel alloy film on the surface of the nickel and SiC. The ohmic contact process skips the photoetching process, realizes the purposes of simplifying the process and reducing the cost, but the process has very strict requirements on the corrosion step and high selectivity of the corrosive liquid, not only needs to remove nickel on the surface of the oxygen film, but also needs to keep a nickel alloy film on the surface of SiC, and the prior art can not meet the requirements of the process.
Disclosure of Invention
In order to make up the defects of the prior art, the invention discloses a nickel corrosion method for preparing a semiconductor electrode. The invention is realized by adopting the following technical scheme:
a nickel etching method for preparing a semiconductor electrode comprises the following steps:
1) forming a film on the wafer by nickel and annealing at high temperature;
2) selectively removing the nickel film on the wafer;
3) processing the wafer obtained in the step 2).
Further, the nickel film forming method includes: evaporating or sputtering, and the film thickness is 80-150 nm.
Further, the high-temperature annealing temperature is 1000 +/-20 ℃.
Further, the selective removal is to remove nickel on the surface of the oxide film by using an etching solution, retain the nickel on the surface of the wafer, and not etch the oxide film.
Further, the volume ratio of the corrosive liquid is 4: 1 deionized water and concentrated nitric acid;
the mass fraction of the concentrated nitric acid is 69-72%.
Further, the etching includes: adding deionized water into the corrosion tank, adding concentrated nitric acid, and stirring uniformly.
Further, the selectively removing includes: and (3) enabling the corrosive liquid to permeate the wafer placed in the Teflon flower basket for at least 5cm, heating at 96-100 ℃ for 90min, taking out the wafer from the flower basket, and flushing with water.
Further, the step 3) comprises drying at 80-100 ℃ for 8-10 min.
Compared with the closest prior art, the technical scheme provided by the invention has the following excellent effects:
(1) according to the technical scheme provided by the invention, the nickel film on the surface of the oxide film is removed by selecting the contents of water and nitric acid, the corrosion temperature and the corrosion time, the nickel film on the wafer is remained, the oxide film is not corroded, the excessive corrosion amount is ensured, the nickel corrosion on the surface of the oxide film is completely, thoroughly and cleanly ensured, and the selective removal of nickel is realized.
(2) The nickel corrosion method provided by the invention is simple to operate, convenient and quick, skips the photoetching process, realizes process simplification, reduces cost and is suitable for flow line production.
Drawings
FIG. 1 is a schematic view of a nickel-etching front side-cut structure provided by the present invention;
FIG. 2 is a schematic view of a nickel-etched rear side-cut structure provided by the present invention;
FIG. 3 is a microscopic view of example 1 provided by the present invention;
FIG. 4 is a microscopic view of example 2 provided by the present invention;
1, a wafer; 2, nickel film; 3, oxidation film.
Detailed Description
For a better understanding of the present invention, reference will now be made to the following descriptions taken in conjunction with the accompanying drawings.
The invention provides a method for corroding nickel in a semiconductor preparation process, as shown in figure 1, before nickel corrosion, a wafer 1 and a nickel film 2 on an oxide film 3 are completely covered. The nickel corrosion method provided by the invention not only ensures the excessive corrosion amount, but also ensures the complete, thorough and clean nickel corrosion on the surface of the oxide film by selecting the contents of water and nitric acid, the corrosion temperature and the corrosion time, thereby realizing the selective removal of the nickel alloy. As shown in fig. 2, after nickel etching, the nickel film 2 on the surface of the oxide film 3 is removed, the nickel film 2 on the wafer 1 is completely remained, and the oxide film 3 is not etched.
Example 1
1) Evaporating nickel on the SiC wafer to form a film with the thickness of 100nm, and annealing at 1000 +/-20 ℃;
2) 2 pieces of 6 inch silicon carbide wafers after nickel annealing are prepared and simultaneously corroded.
3) Preparing a corrosive liquid: 12000ml of deionized water is measured and poured into an etching tank, 3000ml of concentrated nitric acid with the mass fraction of 69% -72% is measured and poured into the etching tank, and then a basket handle (or a stirring rod) is used for stirring uniformly.
4) And (3) putting the prepared 2 pieces of 6-inch SiC wafers into a Teflon flower basket, then putting the wafers into an acid tank, and confirming that the liquid medicine overflows 5cm over the wafers so as to prevent the liquid level of the liquid medicine from being reduced and exposing the wafers.
5) And (3) after placing the flower basket, starting heating, timing, setting the heating temperature to 96 ℃, heating for 90min, taking out the flower basket after heating, and placing the flower basket into a deionized water tank for flushing.
6) Drying at 80 deg.C for 8min after flushing.
7) Microscopic examination gave the pattern shown in FIG. 3: the nickel film 2 on the surface of the oxide film 3 is completely corroded, the nickel film 2 on the surface of the wafer is completely remained, and the oxide film 3 is not corroded, so that the selective removal of nickel is effectively realized.
Example 2
1) Evaporating nickel on the SiC wafer to form a film with the thickness of 80nm, and annealing at 1000 +/-20 ℃;
2) 2 pieces of 6 inch silicon carbide wafers after nickel annealing are prepared and simultaneously corroded.
3) Preparing a corrosive liquid: 12000ml of deionized water is measured and poured into an etching tank, 3000ml of concentrated nitric acid with the mass fraction of 69% -72% is measured and poured into the etching tank, and then a basket handle (or a stirring rod) is used for stirring uniformly.
4) And (3) putting the prepared 2 pieces of 6-inch SiC wafers into a Teflon flower basket, then putting the wafers into an acid tank, and confirming that the liquid medicine overflows 5cm over the wafers so as to prevent the liquid level of the liquid medicine from being reduced and exposing the wafers.
5) And (3) after placing the flower basket, starting heating, timing, setting the heating temperature to 98 ℃, heating for 90min, taking out the flower basket after heating, and placing the flower basket into a deionized water tank for flushing.
6) And drying at 90 ℃ for 9min after flushing.
7) Microscopic examination gave the pattern shown in FIG. 4: the nickel film 2 on the surface of the oxide film 3 is completely corroded, the nickel film 2 on the surface of the wafer is completely remained, and the oxide film 3 is not corroded, so that the selective removal of nickel is effectively realized.
Example 3
1) Evaporating nickel on a Si wafer to form a film with the thickness of 150nm, and annealing at 1000 +/-20 ℃;
2) 2 pieces of 6 inch silicon carbide wafers after nickel annealing are prepared and simultaneously corroded.
3) Preparing a corrosive liquid: 12000ml of deionized water is measured and poured into an etching tank, 3000ml of concentrated nitric acid with the mass fraction of 69% -72% is measured and poured into the etching tank, and then a basket handle (or a stirring rod) is used for stirring uniformly.
4) And (3) putting the prepared 2 pieces of 6-inch SiC wafers into a Teflon flower basket, then putting the wafers into an acid tank, and confirming that the liquid medicine overflows 5cm over the wafers so as to prevent the liquid level of the liquid medicine from being reduced and exposing the wafers.
5) And (3) after placing the flower basket, starting heating, timing, setting the heating temperature to be 100 ℃, heating for 90min, taking out the flower basket after heating, and placing the flower basket into a deionized water tank for flushing.
6) Drying at 100 deg.C for 10min after flushing.
7) The nickel film on the surface of the oxide film is corroded cleanly through microscopic examination, the nickel film on the surface of the wafer is completely reserved, the oxide film is not corroded, and selective removal of nickel is effectively achieved.
The present invention is not limited to the above embodiments, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principle of the present invention are included in the scope of the claims of the present invention as filed.

Claims (8)

1. A nickel etching method for use in semiconductor electrode fabrication, comprising the steps of:
1) forming a film on the wafer by nickel and annealing at high temperature;
2) selectively removing the nickel film on the wafer;
3) processing the wafer obtained in the step 2).
2. The nickel etching method for use in semiconductor electrode production according to claim 1, wherein the nickel film forming method comprises: evaporating or sputtering, and the film thickness is 80-150 nm.
3. The nickel etching method for use in the preparation of semiconductor electrodes according to claim 1, wherein the high temperature annealing temperature is 1000 ± 20 ℃.
4. The method of claim 1, wherein the selective removing comprises removing nickel on the oxide film surface with an etchant, and the nickel on the wafer surface is remained without etching the oxide film.
5. The nickel etching method for use in semiconductor electrode preparation according to claim 4, wherein the etching solution is in a volume ratio of 4: 1, deionized water and concentrated nitric acid;
the mass fraction of the concentrated nitric acid is 69-72%.
6. The nickel etching method for use in semiconductor electrode fabrication according to claim 5, wherein the etching comprises: adding deionized water into the corrosion tank, adding concentrated nitric acid, and stirring uniformly.
7. The nickel etching method for use in semiconductor electrode fabrication of claim 4, wherein the selectively removing comprises: and (3) enabling the corrosive liquid to permeate the wafer placed in the Teflon flower basket for at least 5cm, heating at 96-100 ℃ for 90min, taking out the wafer from the flower basket, and flushing with water.
8. The nickel etching method for preparing the semiconductor electrode according to claim 1, wherein the step 3) comprises drying at 80-100 ℃ for 8-10 min.
CN202110280158.9A 2021-03-16 2021-03-16 Nickel corrosion method for preparing semiconductor electrode Pending CN115083909A (en)

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