CN117233931A - Hundred watt level ultraviolet lithography lens - Google Patents
Hundred watt level ultraviolet lithography lens Download PDFInfo
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- 238000000233 ultraviolet lithography Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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Abstract
The invention belongs to the technical field of ultraviolet lithography equipment, and discloses a hundred watt ultraviolet lithography lens, which comprises a main lens barrel and a multiplying power lens barrel, wherein a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens are sequentially arranged in the main lens barrel; an aperture diaphragm is arranged between the fifth lens and the sixth lens; an eighth lens is arranged in the multiplying power lens barrel; the first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens and the eighth lens are arranged in order from the object plane side to the image plane side. The hundred-watt ultraviolet lithography lens can be adapted to a hundred-watt UV laser illumination light source, so that the exposure energy of an LDI system is increased, the exposure time is shortened, and the production efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of ultraviolet lithography equipment, and particularly relates to a hundred-watt ultraviolet lithography lens.
Background
Photolithography is a technique that uses light to projectively replicate a mask pattern. With the increasing demands of scientific researches on Micro-sensing, micro-nano photoelectronic devices and the like, compared with the traditional photoetching machine, the Digital maskless photoetching technology adopting a Digital Micro-mirror Device (DMD) spatial light modulator can obtain higher degree of freedom for design of patterns by users, and further the complexity of photoetching patterns is remarkably improved.
At present, in the field of photoetching equipment for processing a PCB, a Laser Direct Imaging (LDI) photoetching technology of UV light is widely adopted, compared with a traditional negative imaging technology, maskless photoetching can reduce the technological process by as much as 60%, the technology benefits from omitting steps of manufacturing a photographic bottom plate and the like in the technology, and small-batch express board companies obviously benefit from the direct imaging technology.
In order to further improve the productivity of the LDI lithography device, the laser illumination energy is required to be increased, the exposure time is shortened, the LDI is mainly composed of a laser illumination light source and a projection lens, the power of the UV laser light source can reach more than hundred watts, but the hundred-watt projection lens which can be stably matched with the UV laser light source is less, and the effect is mainly that when the lens is used under the hundred-watt laser light power, the optimal focal plane of the exposure surface of the image side shifts in the axial direction to reduce the image resolution capability of the exposure surface, and the applicable projection focal depth is shortened, so that the performance of the projection lens directly limits the productivity of the LDI lithography device.
Disclosure of Invention
The invention aims to solve the problems that the optimal focal plane drift amount of an exposure surface of the current UV photoetching projection lens is large under the hundred-watt optical power, so that the exposure surface is poor in resolution, the ultraviolet photoetching projection lens can be used under the low laser power, and the production and processing capacity of LDI photoetching equipment is limited.
In order to achieve the above purpose, the technical scheme adopted by the invention is that the hundred watt ultraviolet lithography lens comprises a main lens barrel and a multiplying power lens barrel, wherein a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens are sequentially arranged in the main lens barrel; an aperture diaphragm is arranged between the fifth lens and the sixth lens; an eighth lens is arranged in the multiplying power lens barrel; the first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens and the eighth lens are arranged in sequence from the object plane side to the image plane side; the first lens, the second lens, the third lens, the fourth lens and the fifth lens form a first lens group, and the sixth lens, the seventh lens and the eighth lens form a second lens group; the first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens and the eighth lens are respectively a biconvex positive lens, a negative lens, a positive lens and a positive lens; all lenses are single lenses, and all lenses are located on the same optical axis.
Wherein, the focal length of the lens is f, and f is more than or equal to 3034.06mm and less than or equal to 3644.32mm;
the focal length of the first lens group is f1, the f1 is more than or equal to 86.737mm and less than or equal to 90.584mm;
the focal length of the second lens group is f2, and f2 is more than or equal to 289.556mm and less than or equal to 294.744mm;
the numerical aperture of the object space of the lens is NA obj ，0.07＜NA obj ＜0.08；
The conjugate distance of the lens is L, and L is 695.5mm or more and 704.5mm or less;
15.3≤f/ f 1 ≤16.3；4.2≤f/ f 2 ≤4.65。
preferably, the magnification of the lens is Γ= -3 (according to the optical sign rule, the object space point of the double telecentric lens corresponds to the conjugate point in the image space, is the image point with opposite sign symmetrical about the optical axis, so according to the calculation formula: magnification= (image height/object height), the obtained value is preceded by a "-" sign).
Preferably, the first lens and the second lens are made of H-FK61GTI materials; the fourth lens and the sixth lens are made of QF50GTI materials; the third lens, the fifth lens, the seventh lens and the eighth lens are made of H-K90GTI materials.
Preferably, the radius of curvature of the object side surface of the first lens is R1, and the radius of curvature of the image side surface of the first lens is R2; the curvature radius of the object side surface of the second lens is R3, and the curvature radius of the image side surface of the second lens is R4; the curvature radius of the object side surface of the third lens is R5, and the curvature radius of the image side surface of the third lens is R6; the curvature radius of the object side surface of the fourth lens is R7, and the curvature radius of the image side surface of the fourth lens is R8; the curvature radius of the object side surface of the fifth lens is R9, and the curvature radius of the image side surface of the fifth lens is R10; the radius of curvature of the object side surface of the sixth lens is R11, and the radius of curvature of the image side surface of the sixth lens is R12; the radius of curvature of the object side surface of the seventh lens is R13, and the radius of curvature of the image side surface of the seventh lens is R14; the radius of curvature of the object side surface of the eighth lens is R15, and the radius of curvature of the image side surface of the eighth lens is R16; the following relation is satisfied:
285.96 mm≤R1≤404.59 mm，-206.46 mm≤R2≤-176.02 mm；
83.71 mm≤R3≤92.81 mm，-357.71 mm≤R4≤-305.75 mm；
55.11 mm≤R5≤64.86 mm；367.02 mm≤R6≤454.82 mm；
r7 is ≡;52.99 mm is less than or equal to R8 and less than or equal to 61.57 mm;
38.73 mm≤R9≤46.69 mm；73.61 mm≤R10≤98.23 mm；
-33.69 mm≤R11≤-37.85 mm；60.04 mm≤R12≤68.31 mm；
r13 is ≡; -79.39 mm R14-60.31 mm;
191.871 mm is less than or equal to R15 and less than or equal to 193.67 mm; r16 is ≡.
Preferably, the thickness of the first lens is 7.12-9.52 mm;
the thickness of the second lens is 6.98-9.85 mm;
the thickness of the third lens is 7.23-8.3 mm;
the thickness of the fourth lens is 4.81-6.26 mm;
the thickness of the fifth lens is 3.82-6.51 mm;
the thickness of the sixth lens is 3.51-4.25 mm;
the thickness of the seventh lens is 6.73-9.68 mm;
the thickness of the eighth lens is 10.88-13.72 mm.
Preferably, the center distance from the object plane to the object side of the first lens is 136.5mm to 145.2mm, the center distance from the image side of the first lens to the object side of the second lens is 10.22 mm to 13.5 mm, the center distance from the image side of the second lens to the object side of the third lens is 0.46 mm to 0.71 mm, the center distance from the image side of the third lens to the object side of the fourth lens is 1.423 mm to 2.57 mm, the center distance from the image side of the fourth lens to the object side of the fifth lens is 53.56mm to 57.33mm, the center distance from the image side of the fifth lens to the object side of the fifth lens is 7.06 mm to 9.59 mm, the center distance from the aperture side to the object side of the sixth lens is 21.19mm to 26.27 mm, the center distance from the image side of the sixth lens to the object side of the seventh lens is 46.87 mm to 49. mm, the center distance from the image side of the eighth lens to the eighth lens is 3765 mm to the center distance from the object side of the eighth lens to the eighth lens is 149.00 mm.
The invention has the beneficial effects that: the hundred watt-level ultraviolet lithography lens for maskless lithography selects the optical lens materials H-FK61GTI, QF50GIT and H-K9LGIT which have high I line transmittance, good uniformity and excellent irradiation resistance to be matched and combined, the optimal focal plane position of the exposure surface is less than or equal to 25 mu m/DEG C along with the temperature change under the condition that the laser wavelength is 405nm plus or minus 5nm and the laser light power is less than or equal to 100w for long-time irradiation, namely, the optimal focal plane position change is less than or equal to 0.1mm along the axial direction when the ambient temperature is changed by plus or minus 2 ℃, so that the stability and the consistency of the analysis effect of the exposure surface can be ensured under the condition that the device is used by hundred watt laser, the exposure energy of an LDI system can be increased, the exposure time length can be shortened, and the production efficiency can be improved.
Drawings
FIG. 1 is a schematic view of an optical path of a hundred watt ultraviolet lithography lens of the present invention;
FIG. 2 is a schematic diagram of a hundred watt ultraviolet lithography lens according to the present invention;
FIG. 3 is a graph showing the MTF of the hundred Watts ultraviolet lithography lens according to example 1 of the present invention;
FIG. 4 is a standard dot column diagram of a hundred watt ultraviolet lithography lens according to embodiment 1 of the present invention;
FIG. 5 is a graph showing curvature of field and distortion of a hundred watt ultraviolet lithography lens according to embodiment 1 of the present invention;
FIG. 6 is a defocused MTF chart of a hundred watt level ultraviolet lithography lens of embodiment 1 of the present invention;
FIG. 7 is a graph showing the MTF of the hundred Watts ultraviolet lithography lens according to example 2 of the present invention;
FIG. 8 is a standard dot column diagram of a hundred watt ultraviolet lithography lens according to embodiment 2 of the present invention;
FIG. 9 is a graph showing curvature of field and distortion of a hundred watt ultraviolet lithography lens according to embodiment 2 of the present invention;
fig. 10 is a defocused MTF chart of a hundred watt level ultraviolet lithography lens according to embodiment 2 of the present invention.
Detailed Description
The technical scheme of the present invention is further described below with reference to specific embodiments, but the scope of the present invention is not limited thereto.
Example 1
In the LDI lithography apparatus applied to the ultraviolet lithography lens of this embodiment, a semiconductor laser with a center wavelength of 405nm, a bandwidth of 10nm, and a laser power of 100w is used, and the minimum line width of the lithography apparatus is about 20 μm, if the process factor K1 is selected to be 0.7, the numerical aperture NA of the image space can be selected to be 0.025 according to the resolution formula:
CD =K1×(λ/ NA) ......................................（1）
the LDI lithography equipment requires an object space view field diameter of 20.736mm, an image space view field diameter of 62.208mm, an amplification factor of-3, a conjugate distance of 700mm, an object space working distance of more than or equal to 140mm, an image space working distance of more than or equal to 150mm, and a working distance L meets the following conditions:
L≤（D-F）/NA .........................（2）
where D is the maximum lens diameter, F is the full field size, and NA is the numerical aperture.
The imaging focal depth of the photoetching lens is calculated according to a focal depth formula, when the process factor K2 is 0.7, the focal depth is +/-453.6 mu m, and the application requirement of +/-300 mu m of the focal depth of LDI equipment is met:
DOF=K2×(λ/NA 2 ) .......................................（3）
the lithography lens constraint parameters required by the LDI lithography apparatus are shown in table 1.
TABLE 1
The hundred watt ultraviolet lithography lens in the embodiment comprises a main lens barrel and a multiplying power lens barrel, wherein a first lens 1, a second lens 2, a third lens 3, a fourth lens 4, a fifth lens 5, a sixth lens 6 and a seventh lens 7 are sequentially arranged in the main lens barrel; an eighth lens 8 is arranged in the magnification lens barrel; the first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens and the eighth lens are sequentially arranged from the object plane side to the image plane side, and the sequence numbers from left to right are sequentially 1-8. The first lens, the second lens, the third lens, the fourth lens and the fifth lens form a first lens group, and the sixth lens, the seventh lens and the eighth lens form a second lens group; as shown in fig. 1, the lens is composed of 8 lenses, an aperture diaphragm 9 is located between the fifth lens 5 and the sixth lens 6, light rays are parallel incident from an object plane, pass through the lens and are parallel irradiated at an image plane, and a double telecentric lens structure is formed.
The curvature radiuses of the object side surface and the image side surface of the first lens are 357.48 mm-185.31 mm respectively; the curvature radiuses of the object side surface and the image side surface of the second lens are 89.39 mm and 331.56 mm respectively; the curvature radiuses of the object side surface and the image side surface of the third lens are 59.11 mm and 371.1 and mm respectively; the curvature radius of the object side surface and the image side surface of the fourth lens is infinity (infinity) and 56.31mm respectively; the radius of curvature of the object side surface and the image side surface of the fifth lens are respectively 41.84 mm and 81.21 mm; the radius of curvature of the object side surface and the image side surface of the sixth lens are-36 mm mm and 62.44mm respectively; the curvature radius of the object side surface and the image side surface of the seventh lens are respectively ≡ (infinity) and-66 mm; the radii of curvature of the object side surface and the image side surface of the eighth lens element are 193mm and infinity, respectively.
The object plane-to-object side distance of the first lens element is 140mm, the object plane-to-object side distance of the first lens element is 12.22/mm, the object plane-to-object side distance of the second lens element is 0.5/mm, the object plane-to-object side distance of the third lens element is 2/mm, the object plane-to-object side distance of the fourth lens element is 55.48 mm, the object plane-to-aperture plane distance of the fifth lens element is 8.13/mm, the object plane-to-object plane distance of the sixth lens element is 24.19/mm, the object plane-to-object plane distance of the sixth lens element is 47.15/mm, the object plane-to-object plane distance of the seventh lens element is 199.85 mm, and the object plane-to-exposure plane distance of the eighth lens element is 150. 150 mm.
The lenses are made of three materials, namely Du Ming H-K90GTI, QF50GTI and H-FK61GTI, and the three materials have the advantages of high transmittance, good uniformity and excellent irradiation resistance at 405nm wave bands.
The three material parameters of the lens are shown in table 2.
TABLE 2
The lens size parameters in the lens are shown in table 3.
TABLE 3 Table 3
The lens structurally consists of a main lens barrel and a multiplying power lens barrel, wherein the lens barrel materials (comprising a lens base and a pressing ring) are all subjected to 6061 (hard aluminum alloy) anodic oxidation blackening treatment, and the two lens barrels are fixedly connected by 4M 5 multiplied by 16 stainless steel inner hexagon screws.
In which 7 lenses 1 to 7 lenses and 1 aperture stop (made of copper) are installed in the main lens barrel, and the installation sequence and positions are shown in fig. 2. The lens is fixed on the lens seat by adopting silica gel cementing, the pressurizing ring is used for auxiliary fixation, and the lens, the lens seat and the pressurizing ring form independent components and are formed by centering processing. And the distance between the centers of lenses is controlled by using a space ring between each two independent lens bases, the space ring and the aperture diaphragm are directly arranged in the main lens cone according to the assembly sequence, and finally are rotationally pressed and fixed through a pressing ring.
The magnification lens barrel consists of two structural members, one of which is connected with the main lens barrel, and the second structural member (provided with a lens 8) is rotatably connected with the main lens barrel and is fixed through 4 M3×4 jackscrews after being adjusted to a proper position.
The whole size of the lens is 94.5mm x422mm, the front 7 lenses (comprising diaphragms) are assembled in one lens barrel, the 8 th lens is independently and fixedly arranged in the other lens barrel, the structure can ensure the accuracy of the inner diameter of the lens barrel during turning of the long lens barrel, and on the other hand, the lenses sensitive to the influence of image quality are directly arranged in one lens barrel, so that the aberration caused by element interval and eccentricity is reduced.
The lens assembly tolerance parameters are shown in table 4.
TABLE 4 Table 4
As shown in FIG. 3, in the wavelength range of 400nm to 410nm, the meridian and sagittal MTF values in the whole view field range reach the diffraction limit (each view field MTF curve coincides with the diffraction limit curve), and the corresponding MTF at the spatial frequency of 75lp/mm is more than or equal to 0.2.
As shown in FIG. 4, in the standard point diagram, the image plane light spot RMS radius is less than or equal to 2 μm (Airy spot radius 9.755 μm) within the full view field range, and the minimum line width preparation requirement of the equipment can be met.
As shown in FIG. 5, the curvature of field of the lens is less than or equal to 0.13mm, that is, the difference between the optimal focal plane at the center of the field of view and the optimal focal plane at other positions is less than or equal to 0.13mm, and the smaller curvature of field is beneficial to the lens to obtain a longer focal depth range; the distortion of the lens is less than or equal to 3 mu m, and the photolithographic pattern of the equipment can be ensured to be free from deformation.
As shown in FIG. 6, when the spatial frequency is 75lp/mm, the MTF value of the full field of view is equal to or more than 0.2 within the range of +/-0.3 mm, so that the lens can be ensured to be within the depth range of +/-0.3 mm, and the equipment obtains better photoetching effect, namely the focal depth is +/-0.3 mm.
Example 2
The LDI lithography apparatus applied to the ultraviolet lithography lens in this embodiment uses a semiconductor laser with a center wavelength of 405nm, a bandwidth of 10nm, and a laser power of 100w, and the minimum line width of the lithography apparatus is about 20 μm, and the lithography lens constraint parameters required by the LDI lithography apparatus are shown in table 5.
TABLE 5
The lens structure is the same as that of the embodiment 1, and the curvature radiuses of the object side surface and the image side surface of the first lens are 289.63 mm-195.46 mm respectively; the curvature radiuses of the object side surface and the image side surface of the second lens are 83.71mm and-323.32 mm respectively; the radius of curvature of the object side surface and the image side surface of the third lens are 55.72, mm and 454.82 mm respectively; the curvature radius of the object side surface and the image side surface of the fourth lens is infinity (infinity) and 55.31mm respectively; the curvature radiuses of the object side surface and the image side surface of the fifth lens are 39.53 mm and 88.96 mm respectively; the radius of curvature of the object side surface and the image side surface of the sixth lens are respectively-35.06 mm mm and 64.04mm; the curvature radius of the object side surface and the image side surface of the seventh lens are respectively ≡ (infinity), -62.71 mm; the object side surface and the image side surface of the eighth lens element have radii of curvature of 192.49mm and infinity, respectively.
The object plane-to-object side distance of the first lens element is 145.2mm, the image side of the first lens element and the object side of the second lens element are 13.22. 13.22 mm, the image side of the second lens element and the object side of the third lens element are 0.65 mm, the image side of the third lens element and the object side of the fourth lens element are 2.32. 2.32 mm, the image side of the fourth lens element and the object side of the fifth lens element are 57.18 mm, the image side of the fifth lens element and the aperture plane are 9.13. 9.13 mm, the aperture plane and the object side of the sixth lens element are 21.19. 21.19mm, the image side of the sixth lens element and the object side of the seventh lens element are 47.15. 47.15 mm, the image side of the seventh lens element and the object side of the eighth lens element are 200.85 mm, and the image side of the eighth lens element and the exposure plane are 150. 150 mm.
The lens was made from the same materials as in example 1, with the lens size parameters shown in table 6.
TABLE 6
As shown in FIG. 7, in the wavelength range of 400nm to 410nm, the meridian and sagittal MTF values in the whole view field range reach the diffraction limit (each view field MTF curve coincides with the diffraction limit curve), and the corresponding MTF at the spatial frequency of 75lp/mm is more than or equal to 0.2.
As shown in FIG. 8, in the standard dot column diagram, the image plane light spot RMS radius is less than or equal to 2.4 μm (Airy spot radius 9.17 μm) in the full view field range, and the minimum line width preparation requirement of the equipment can be met.
As shown in FIG. 9, the curvature of field of the lens is less than or equal to 0.15mm, that is, the difference between the optimal focal plane at the center of the field of view and the optimal focal plane at other positions is less than or equal to 0.15mm, and a smaller curvature of field is beneficial to the lens to obtain a longer focal depth range; the distortion of the lens is less than or equal to 3 mu m, and the photolithographic pattern of the equipment can be ensured to be free from deformation.
As shown in FIG. 10, when the spatial frequency is 75lp/mm, the MTF value of the full field of view is equal to or more than 0.2 within the range of +/-0.3 mm, so that the lens can be ensured to be within the depth range of +/-0.3 mm, and the equipment obtains better photoetching effect, namely the focal depth is +/-0.3 mm.
Claims (6)
1. The hundred watt ultraviolet lithography lens is characterized by comprising a main lens barrel and a multiplying power lens barrel, wherein a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens are sequentially arranged in the main lens barrel; an aperture diaphragm is arranged between the fifth lens and the sixth lens; an eighth lens is arranged in the multiplying power lens barrel; the first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens and the eighth lens are arranged in sequence from the object plane side to the image plane side; the first lens, the second lens, the third lens, the fourth lens and the fifth lens form a first lens group, and the sixth lens, the seventh lens and the eighth lens form a second lens group; the first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens and the eighth lens are respectively a biconvex positive lens, a negative lens, a positive lens and a positive lens; all lenses are single lenses, and all lenses are positioned on the same optical axis;
wherein, the focal length of the lens is f, and f is more than or equal to 3034.06mm and less than or equal to 3644.32mm;
the focal length of the first lens group is f1, the f1 is more than or equal to 86.737mm and less than or equal to 90.584mm;
the focal length of the second lens group is f2, and f2 is more than or equal to 289.556mm and less than or equal to 294.744mm;
the numerical aperture of the object space of the lens is NA obj ，0.07＜NA obj ＜0.08；
The conjugate distance of the lens is L, and L is 695.5mm or more and 704.5mm or less;
15.3≤f/ f 1 ≤16.3；4.2≤f/ f 2 ≤4.65。
2. the hundred watt level ultraviolet lithography lens of claim 1, wherein: the magnification of the lens is Γ= -3.
3. The hundred watt level ultraviolet lithography lens of claim 1, wherein: the first lens and the second lens are made of H-FK61GTI materials; the fourth lens and the sixth lens are made of QF50GTI materials; the third lens, the fifth lens, the seventh lens and the eighth lens are made of H-K90GTI materials.
4. The hundred watt ultraviolet lithography lens of claim 1, wherein the radius of curvature of the object-side surface of the first lens element is R1 and the radius of curvature of the image-side surface of the first lens element is R2; the curvature radius of the object side surface of the second lens is R3, and the curvature radius of the image side surface of the second lens is R4; the curvature radius of the object side surface of the third lens is R5, and the curvature radius of the image side surface of the third lens is R6; the curvature radius of the object side surface of the fourth lens is R7, and the curvature radius of the image side surface of the fourth lens is R8; the curvature radius of the object side surface of the fifth lens is R9, and the curvature radius of the image side surface of the fifth lens is R10; the radius of curvature of the object side surface of the sixth lens is R11, and the radius of curvature of the image side surface of the sixth lens is R12; the radius of curvature of the object side surface of the seventh lens is R13, and the radius of curvature of the image side surface of the seventh lens is R14; the radius of curvature of the object side surface of the eighth lens is R15, and the radius of curvature of the image side surface of the eighth lens is R16; the following relation is satisfied:
285.96 mm≤R1≤404.59 mm，-206.46 mm≤R2≤-176.02 mm；
83.71 mm≤R3≤92.81 mm，-357.71 mm≤R4≤-305.75 mm；
55.11 mm≤R5≤64.86 mm；367.02 mm≤R6≤454.82 mm；
r7 is ≡;52.99 mm is less than or equal to R8 and less than or equal to 61.57 mm;
38.73 mm≤R9≤46.69 mm；73.61 mm≤R10≤98.23 mm；
-37.85 mm≤R11≤-33.69 mm；60.04 mm≤R12≤68.31 mm；
r13 is ≡; -79.39 mm R14-60.31 mm;
191.871 mm is less than or equal to R15 and less than or equal to 193.67 mm; r16 is ≡.
5. The hundred watt level ultraviolet lithography lens of claim 1, wherein:
the thickness of the first lens is 7.12-9.52 mm;
the thickness of the second lens is 6.98-9.85 mm;
the thickness of the third lens is 7.23-8.3 mm;
the thickness of the fourth lens is 4.81-6.26 mm;
the thickness of the fifth lens is 3.82-6.51 mm;
the thickness of the sixth lens is 3.51-4.25 mm;
the thickness of the seventh lens is 6.73-9.68 mm;
the thickness of the eighth lens is 10.88-13.72 mm.
6. The hundred watt level ultraviolet lithography lens of claim 1, wherein: the center distance from the object plane to the object side of the first lens is 136.5mm to 145.2mm, the center distance from the image side of the first lens to the object side of the second lens is 10.22 mm to 13.5 mm, the center distance from the image side of the second lens to the object side of the third lens is 0.46 mm to 0.71 mm, the center distance from the image side of the third lens to the object side of the fourth lens is 1.423 mm to 2.57 mm, the center distance from the image side of the fourth lens to the object side of the fifth lens is 53.56mm to 57.33mm, the center distance from the image side of the fifth lens to the aperture plane is 7.06 mm to 9.59 mm, the center distance from the aperture plane to the object side of the sixth lens is 21.19mm to 26.27 mm, the center distance from the image side of the sixth lens to the object side of the seventh lens is 46.87 mm to 49.61. mm, the center distance from the image side of the seventh lens to the eighth lens is 3765 mm, and the center distance from the image side of the eighth lens to the eighth lens is 3765 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311489318.6A CN117233931B (en) | 2023-11-10 | 2023-11-10 | Hundred watt level ultraviolet lithography lens |
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| CN202311489318.6A CN117233931B (en) | 2023-11-10 | 2023-11-10 | Hundred watt level ultraviolet lithography lens |
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| CN117233931A true CN117233931A (en) | 2023-12-15 |
| CN117233931B CN117233931B (en) | 2024-01-30 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000155267A (en) * | 1998-11-19 | 2000-06-06 | Nikon Gijutsu Kobo:Kk | Microscope objective lens |
| JP2001129679A (en) * | 1999-10-29 | 2001-05-15 | Mitsubishi Electric Corp | Laser beam apparatus, laser beam machining, and aspherical lens |
| US20050057795A1 (en) * | 2003-09-12 | 2005-03-17 | Pentax Corporation | Ultraviolet imaging system |
| KR20140075326A (en) * | 2012-12-11 | 2014-06-19 | 한국광기술원 | exposure apparatus for lithography printer using ultraviolet ray |
| CN108287402A (en) * | 2018-03-27 | 2018-07-17 | 视科光电科技（深圳）有限公司 | Camera lens module and 3D printer |
| CN115576085A (en) * | 2022-09-09 | 2023-01-06 | 苏州赛源光学科技有限公司 | Wide-width ultraviolet projection lens |
-
2023
- 2023-11-10 CN CN202311489318.6A patent/CN117233931B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000155267A (en) * | 1998-11-19 | 2000-06-06 | Nikon Gijutsu Kobo:Kk | Microscope objective lens |
| JP2001129679A (en) * | 1999-10-29 | 2001-05-15 | Mitsubishi Electric Corp | Laser beam apparatus, laser beam machining, and aspherical lens |
| US20050057795A1 (en) * | 2003-09-12 | 2005-03-17 | Pentax Corporation | Ultraviolet imaging system |
| KR20140075326A (en) * | 2012-12-11 | 2014-06-19 | 한국광기술원 | exposure apparatus for lithography printer using ultraviolet ray |
| CN108287402A (en) * | 2018-03-27 | 2018-07-17 | 视科光电科技（深圳）有限公司 | Camera lens module and 3D printer |
| CN115576085A (en) * | 2022-09-09 | 2023-01-06 | 苏州赛源光学科技有限公司 | Wide-width ultraviolet projection lens |
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| Publication number | Publication date |
|---|---|
| CN117233931B (en) | 2024-01-30 |
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