CN117175938A - DC-DC converter - Google Patents

DC-DC converter Download PDF

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CN117175938A
CN117175938A CN202311445648.5A CN202311445648A CN117175938A CN 117175938 A CN117175938 A CN 117175938A CN 202311445648 A CN202311445648 A CN 202311445648A CN 117175938 A CN117175938 A CN 117175938A
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transistor
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voltage
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CN117175938B (en
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Tuoer Microelectronics Co ltd
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Tuoer Microelectronics Co ltd
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Abstract

The application provides a direct current-direct current converter.A voltage output signal output by a signal conversion module is processed into an error amplified signal by an error amplification module and is input into a signal processing module, and the error amplified signal and an input slope signal are processed by the signal processing module to output a current signal; the signal input module determines a voltage division signal according to the current signal output by the signal processing module and the on-resistance in the signal input module, determines a first voltage input signal according to the voltage division signal and the power supply voltage in the signal input module, and inputs the first voltage input signal to the signal conversion module; the signal conversion module is used for determining a voltage output signal according to the first voltage input signal and the second voltage input signal and outputting the voltage output signal to the error amplification module; the second voltage input signal is determined according to the supply voltage and an inductor current of a power conversion module in the signal conversion module. The application can simplify the circuit structure and improve the response speed.

Description

DC-DC converter
Technical Field
The application relates to the technical field of circuits, in particular to a direct current-direct current converter.
Background
The DC-DC converter, which is also called a DC-DC converter, is an electric energy conversion circuit that can convert a DC power source into a DC power source of different voltages, and is widely used in various fields, for example: can be used as a fixed frequency converter, also called a pulse width modulation (Pulse Width Modulation, PWM) converter. In practical applications, the existing dc-dc converter needs to continuously reduce the inductance value in the dc-dc converter, and reducing the inductance value is helpful for reducing the circuit volume.
However, decreasing the inductance value increases the rising slope and the falling slope of the inductance current, and the greater the rising slope of the inductance current, the current sampling circuit will generate distortion of the current sampling value, and the current sampling circuit occupies a larger chip area due to the complex structure.
Disclosure of Invention
In view of the above, an object of the present application is to provide a dc-dc converter capable of improving a response speed while simplifying a circuit configuration.
In a first aspect, an embodiment of the present application provides a dc-dc converter, including: the device comprises a signal processing module, a signal input module, a signal conversion module and an error amplification module, wherein the output ends of the signal processing module and the signal input module are connected with the input end of the signal conversion module, the first output end of the signal conversion module is connected with the input end of the signal processing module through the error amplification module, and the second output end of the signal conversion module is connected with the input end of the signal input module;
The error amplifying module is used for processing the voltage output signal output by the signal converting module into an error amplifying signal and inputting the error amplifying signal to the signal processing module;
the signal processing module is used for processing the error amplification signal and the slope signal input into the signal processing module and outputting a current signal;
the signal input module is used for determining a voltage division signal according to the current signal output by the signal processing module and the on-resistance in the signal input module, determining a first voltage input signal according to the voltage division signal and the power supply voltage in the signal input module, and inputting the first voltage input signal to the signal conversion module;
the signal conversion module is used for determining a voltage output signal according to the first voltage input signal and the second voltage input signal and outputting the voltage output signal to the error amplification module; wherein the second voltage input signal is determined based on the supply voltage and an inductor current of a power conversion module of the signal conversion module.
In an alternative embodiment of the present application, the signal processing module includes an operational amplifier, a first transistor, and a first resistor;
The positive electrode input end of the operational amplifier is connected with the output end of the error amplifying module, the negative electrode input end of the operational amplifier is connected with the drain electrode of the first transistor, the output end of the operational amplifier is connected with the grid electrode of the first transistor, the source electrode of the first transistor is connected with the first input end of the signal conversion module, the drain electrode of the first transistor is also connected with one end of the first resistor, and the other end of the first resistor is used for inputting a slope signal.
In an alternative embodiment of the present application, the signal processing module includes a second resistor, a third resistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, and a seventh transistor;
the grid electrode of the second transistor is connected with the output end of the error amplifying module, the source electrode of the second transistor is connected with the power supply in the signal input module through the second resistor, and the drain electrode of the second transistor is connected with the source electrode of the third transistor; the grid electrode of the fourth transistor is used for inputting a slope signal, the source electrode of the fourth transistor is connected with a power supply in the signal input module through the third resistor, and the drain electrode of the fourth transistor is connected with the source electrode of the fifth transistor;
The third transistor and the sixth transistor form a current mirror, the fifth transistor and the seventh transistor form a current mirror, a source electrode of the sixth transistor is connected with a source electrode of the fifth transistor, and a source electrode of the seventh transistor is connected with a first input end of the signal conversion module.
In an alternative embodiment of the present application, the system further includes an oscillation module, where the oscillation module is connected to the signal processing module, and the oscillation module is configured to input a ramp signal to the signal processing module.
In an alternative embodiment of the present application, the signal input module includes a power supply module and an eighth transistor;
the output end of the power supply module is connected with the source electrode of the eighth transistor, the drain electrode of the eighth transistor is connected with the first input end of the signal conversion module, and the grid electrode of the eighth transistor is connected with the output end of the pulse width modulation controller in the signal conversion module.
In an alternative embodiment of the present application, the signal conversion module includes a comparison module, a pulse width modulation controller, and a power conversion module;
the negative electrode input end of the comparison module is connected with the output end of the signal processing module and the output end of the signal input module, the positive electrode input end of the comparison module is connected with the second output end of the power conversion module, and the output end of the comparison module is connected with the input end of the pulse width modulation controller; the first output end of the pulse width modulation controller is connected with the first input end of the power conversion module and the input end of the signal input module, the second output end of the pulse width modulation controller is connected with the second input end of the power conversion module, and the first output end of the power conversion module is connected with the input end of the error amplification module.
In an alternative embodiment of the application, the power conversion module comprises a switching unit, a capacitive unit, an inductive unit and a ninth transistor;
the grid electrode of the ninth transistor is connected with the first output end of the pulse width modulation controller, the source electrode of the ninth transistor is connected with a power supply in the signal input module, the drain electrode of the ninth transistor is connected with the first end of the switch unit, the second end of the switch unit is connected with the second output end of the pulse width modulation controller, the drain electrode of the ninth transistor is also connected with one end of the inductance unit and the positive electrode input end of the comparison module, and the other end of the inductance unit is connected with one end of the capacitance unit and the input end of the error amplification module;
the other end of the capacitor unit and the third end of the switch unit are grounded.
In an alternative embodiment of the present application, the on-resistance in the signal input module is in a preset ratio with the on-resistance of the ninth transistor;
wherein the preset ratio ranges from 10 to 100000.
In an alternative embodiment of the present application, the comparing module includes a tenth transistor, an eleventh transistor, a first current source, a second current source, and an inverter;
The source electrode of the tenth transistor is connected with the second output end of the power conversion module, the drain electrode of the tenth transistor is connected with one end of the first current source, the grid electrode of the tenth transistor is connected with the drain electrode of the tenth transistor, the drain electrode of the tenth transistor is connected with the grid electrode of the eleventh transistor, the source electrode of the eleventh transistor is connected with the output end of the signal processing module, the drain electrode of the eleventh transistor is connected with one end of the second current source and the input end of the inverter, and the output end of the inverter is connected with the input end of the pulse width modulation controller;
the other end of the first current source and the other end of the second current source are grounded.
In an alternative embodiment of the present application, the error amplification module includes a voltage sampler and an error amplifier;
the input end of the voltage sampler is connected with the output end of the signal conversion module, the output end of the voltage sampler is connected with the negative electrode input end of the error amplifier, the positive electrode input end of the error amplifier is used for inputting reference voltage, and the output end of the error amplifier is connected with the input end of the signal processing module.
The embodiment of the application has at least the following beneficial effects:
the DC-DC converter provided by the embodiment of the application can achieve the equivalent comparison result which is the same as that of the DC-DC converter in the prior art while canceling the current sampling circuit, and can not cause distortion of a current sampling value due to the performance limitation of the current sampling circuit; the inductor with smaller inductance value can be used, the occupied area of the circuit is smaller, and the response speed can be improved while the circuit structure is simplified.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic structure of a dc-dc converter according to the prior art;
Fig. 2 shows a schematic structure of a dc-dc converter according to an embodiment of the application;
fig. 3 is a schematic diagram of another dc-dc converter according to an embodiment of the application;
fig. 4 is a schematic structural diagram of a first signal processing module according to an embodiment of the present application;
fig. 5 shows a schematic structural diagram of a second signal processing module according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a power conversion module according to an embodiment of the present application;
fig. 7 shows a schematic structural diagram of a comparison module according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. Based on the embodiments of the present application, every other embodiment obtained by a person skilled in the art without making any inventive effort falls within the scope of protection of the present application.
The terms "a," "an," "the," and "said" are used in this specification to denote the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. in addition to the listed elements/components/etc.; the terms "first" and "second" and the like are used merely as labels, and are not intended to limit the number of their objects.
It should be understood that in embodiments of the present application, "at least one" means one or more and "a plurality" means two or more. "and/or" is merely an association relationship describing an association object, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. The character "/" generally indicates that the context-dependent object is an "or" relationship. "comprising A, B and/or C" means comprising any 1 or any 2 or 3 of A, B, C.
It should be understood that in embodiments of the present application, "B corresponding to a", "a corresponding to B", or "B corresponding to a" means that B is associated with a from which B may be determined. Determining B from a does not mean determining B from a alone, but may also determine B from a and/or other information.
In addition, the described embodiments are only some, but not all, embodiments of the application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art based on embodiments of the application without making any inventive effort, fall within the scope of the application.
First, a DC-DC converter, which is also called a DC-DC converter, is an electric energy conversion circuit that can convert a DC power source into a DC power source of different voltages, and is widely used in various fields, for example: can be used as a fixed frequency converter, also called a pulse width modulation (Pulse Width Modulation, PWM) converter.
Illustratively, a DC-DC converter of the prior art is illustrated, as shown in FIG. 1, in which the rising slope of the inductor current is equal toWherein->For input voltage +. >For the output voltage, L is the inductance value of the inductor (i.e., the inductance value of the inductor in the power conversion module of the dc-dc converter). The larger the rising slope of the inductance current is, the current sampling circuit can cause the distortion of the current sampling value due to the speed limitation, and in addition, the current sampling circuit in the prior art has a complex structure, so that the current sampling circuit occupies a larger chip area. The principle of PWMO generation in fig. 1 is: the current of Ramp signal Ramp and current sampling signal are multiplied by a resistance value and added, and then compared with the voltage of error amplification signal EAO in a comparator to generate pulse width modulation signal PWMO, and the PWMO signal (using the duty ratio information of PWMO signal) is used to control power conversionA stage. In fig. 1, if the current sampling signal is not added, the loop response speed is slower in the original voltage control mode, and if the current sampling signal is added, the loop response speed is faster in the current control mode. The equivalent functions of the comparator in fig. 1 are: comparison->And->. Wherein Is can be expressed as (1/K). Times.IL, K Is the sampling proportion number, is the current value of current sampling, IL Is the inductor current, R Is the design resistance, < >>Is the voltage of Ramp signal Ramp +. >The voltage of the error amplified signal EAO output by the error amplifier can also be regarded as an equivalent comparison +.>And (3) with。
That is, in practical applications, the existing dc-dc converter needs to continuously reduce the inductance value in the dc-dc converter, and reducing the inductance value helps to reduce the circuit volume. However, decreasing the inductance value increases the rising slope and the falling slope of the inductance current, and the greater the rising slope of the inductance current, the current sampling circuit will generate distortion of the current sampling value, and the current sampling circuit occupies a larger chip area due to the complex structure.
Based on this, the embodiment of the application provides a direct current-direct current converter, which can simplify the circuit structure and improve the response speed.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a dc-dc converter according to an embodiment of the application. As shown in fig. 2, a dc-dc converter provided in an embodiment of the present application includes: the signal processing module 400, the signal input module 100, the signal conversion module 200 and the error amplification module 300, wherein the output ends of the signal processing module 400 and the signal input module 100 are connected with the input end of the signal conversion module 200, the first output end of the signal conversion module 200 is connected with the input end of the signal processing module 400 through the error amplification module 300, and the second output end of the signal conversion module 200 is connected with the input end of the signal input module 100.
The signal transmission process among the signal processing module 400, the signal input module 100, the signal conversion module 200 and the error amplifying module 300 is as follows:
the error amplification module 300 processes the voltage output signal output from the signal conversion module 200 into an error amplified signal, and inputs the error amplified signal to the signal processing module 400; the signal processing module 400 processes the error amplified signal and the ramp signal input to the signal processing module 400, and outputs a current signal; the signal input module 100 determines a voltage division signal according to the current signal output by the signal processing module 400 and the on-resistance in the signal input module 100, determines a first voltage input signal according to the voltage division signal and the power supply voltage in the signal input module 100, and inputs the first voltage input signal to the signal conversion module 200; the signal conversion module 200 determines a voltage output signal according to the first voltage input signal and the second voltage input signal, and outputs the voltage output signal to the error amplification module 300; wherein the second voltage input signal is determined based on the supply voltage and the inductor current of the power conversion module in the signal conversion module 200.
In order to avoid adverse effects caused by a current sampling circuit, the embodiment of the application introduces a signal input module and is matched with other circuit modules to achieve the equivalent comparison result which is the same as that of a direct current-direct current converter in the prior art, the circuit structure is simple, the circuit area is further reduced, the response speed of the circuit is improved, the problems of low inductance value adaptability and large chip area of an inductor in the traditional direct current-direct current converter are solved, and the response speed can be improved while the circuit structure is simplified.
In an alternative embodiment, as shown in fig. 3, the signal input module 100 includes a power supply module 110 and an eighth transistor 111; the signal conversion module 200 includes a comparison module 210, a pulse width modulation controller 220, and a power conversion module 230; error amplification module 300 includes voltage sampler 310 and error amplifier 320; the signal processing module 400 is a subtraction circuit, and further includes an oscillation module 500.
Specifically, the output terminal of the power module 110 is connected to the source terminal of the eighth transistor 111, the drain terminal of the eighth transistor 111 is connected to the first input terminal of the signal conversion module (the negative input terminal of the comparison module 210), and the gate terminal of the eighth transistor 111 is connected to the first output terminal of the pwm controller 220 in the signal conversion module 200. The negative input end of the comparison module 210 is connected with the output end of the signal processing module 400 and the output end (drain electrode of the eighth transistor 111) of the signal input module 100, the positive input end of the comparison module 210 is connected with the second output end of the power conversion module 230, and the output end of the comparison module 210 is connected with the input end of the pulse width modulation controller 220; the first output terminal of the pwm controller 220 is connected to the first input terminal of the power conversion module 230 and the input terminal (gate of the eighth transistor 111) of the signal input module 100, the second output terminal of the pwm controller 220 is connected to the second input terminal of the power conversion module 230, the first output terminal of the power conversion module 230 is connected to the input terminal of the voltage sampler 310 in the error amplification module 300, the output terminal of the voltage sampler 310 is connected to the negative input terminal of the error amplifier 320, the positive input terminal of the error amplifier 320 is used for inputting a reference voltage, and the output terminal of the error amplifier 320 is connected to the input terminal of the signal processing module 400.
In addition, the dc-dc converter may further include an oscillation module 500, where the signal processing module 400 is a subtraction module, specifically, the subtraction module includes a first input terminal and a second input terminal, the output terminal of the error amplifier 320 is connected to the first input terminal of the signal processing module 400 (subtraction module), the oscillation module 500 is connected to the second input terminal of the signal processing module 400, and the oscillation module 500 is configured to input a ramp signal to the signal processing module 400.
In the signal input module 100 of the dc-dc converter shown in fig. 3, the power module 110 is a dc power supply, and inputs a power supply voltageThe first output terminal of the power conversion module 230 outputs a voltage output signal +.>Because the DC-DC converter in the embodiment of the application is in a current control mode, the DC-DC converter has the function of inputting power supply voltage +.>Converted into a voltage output signal->. For example->5V->The whole feedback loop can automatically adjust the on duty ratio of the switch to realize the function of the DC-DC converter, so that the voltage output signal is a stable value.
Further, the eighth transistor 111 may be equivalent to a resistor in operationThe resistance value of the resistor is in a preset ratio with the on-resistance of the high-side switch, wherein the on-resistance of the high-side switch may refer to the on-resistance of the ninth transistor in the power conversion module 230, that is, the on-resistance of the eighth transistor 111 is K times that of the high-side switch, and K may take a value between 10 and 100000, so that the voltage difference between the chips (circuits) is as small as possible.
Optionally, the oscillation module 500 is configured to generate the Ramp signal Ramp and to convert the voltage of the Ramp signal RampInput to the signal processing module 400; signal processingThe module 400 is for applying a voltage +_ to the Ramp signal Ramp>And the voltage of the error amplified signal EAO +.>Difference is made to obtain a voltage difference signal +.>And processing the voltage difference signal to obtain a current signal +.>Wherein R1 is a resistor in the signal processing module 400, and R1 is designed to have a resistance value equal to that of the design resistor R of the dc-dc converter in fig. 1. The signal processing module may be, for example, a subtraction module Sub.
In the error amplifying module 300 of the dc-dc converter shown in fig. 3, the voltage sampler 310 is configured to sample the voltage output signal to obtain the voltage feedback signal Vfb, and the error amplifier 320 is configured to compare the voltage feedback signal Vfb with the reference voltage signal Vref to obtain the voltage of the error amplified signal EAO。
Specifically, the power conversion module 230 performs voltage conversion and also performs power conversion, and it can be understood that the power conversion module 230 is a voltage conversion module with high power. Error amplifier 320 is used to compare the reference voltage signal Vref with the voltage feedback signal Vfb and to error amplify the voltage of error amplified signal EAO . The reference voltage signal Vref may be a bandgap reference voltage or a divided voltage of the bandgap reference voltage. The pwm controller 220 is used to drive the turning on and off of the power switches in the power conversion module 230. The voltage sampler 310 is used to sample the voltage output signal to obtain the voltage inverseFeed signal Vfb.
Here, when the voltage Vfb is lower than the voltage Vref, the voltage of the error amplification signal EAOWill rise, resulting in an increase of the current output by the signal processing module 400, and thus in +.>The duty cycle of the output signal PWMO of the comparison module 210 will increase, the voltage output signal +_is output via the first output terminal of the power conversion module 230>Increasing will turn up the voltage value of Vfb. The Vref voltage refers to the voltage input at the positive input terminal of the error amplifier 320, and the Vfb voltage refers to the voltage input at the negative input terminal of the error amplifier 320.
When the voltage Vfb is higher than the voltage Vref, the voltage of the error amplification signal EAOWill decrease, resulting in a decrease of the current output by the signal processing module 400, and thus in +.>The duty cycle of the output signal PWMO of the comparison module 210 will decrease, and the voltage output signal +_ is output via the first output terminal of the power conversion module 230 >The voltage value of Vfb will be reduced.
It can be seen that the above-mentioned feedback loop forms a negative feedback, and when the negative feedback loop is stable, the voltage Vfb is equal to the voltage Vref, so that it can implement accurate control of voltage Vfb, and indirectly accurate control of voltage output signalIs effective in (1).
Further, the signal of the DC-DC converter shown in FIG. 3In the conversion module 200, the comparison module 210 is configured to input a first voltage input signal to the negative input terminalA second voltage input signal input from the positive input terminalThe comparison is performed to generate and output the pulse width modulation signal PWMO. Wherein,，/>IL is inductor current, ">Is the on-resistance of the high side switch. Specifically, when the first voltage input signal +_f is input at the negative input terminal of the comparison module 210>A second voltage input signal which is greater than the positive input terminal>When the pulse width modulation signal PWMO is low; a first voltage input signal input at the negative electrode input terminal>A second voltage input signal less than the positive input terminalWhen the pulse width modulation signal PWMO is high; i.e. the first voltage input signal +_ of the pulse width modulation signal PWMO output by the comparison module 210 at the negative input terminal>A second voltage input signal equal to the positive input terminal >And turning over.
Here, the comparison module 210 is used for comparisonAnd->That is equivalent comparisonAnd->Both of which contain the supply voltage +.>Can be equivalent to->And->Further equivalent comparison ofAnd->That is equivalent comparison +.>And (3) with。
It is assumed that the number of the sub-blocks,equal to 1/K, equivalent comparison->And->Both are multiplied by R1, equivalent comparison +.>And->. Further, both are added with +.>Equivalent comparison->And->Here, since the resistance value of R1 is designed to be the same as the designed resistance R of the dc-dc converter in fig. 1, the equivalent comparison effect of PWMO generated by the comparison module in fig. 3 of the present application is the same as that in fig. 1 of the related art, but the implementation of the present application is not limited by the performance of the current sampling circuit in fig. 1 and the circuit area is small.
It should be noted that, in the dc-dc converter provided in the embodiment of the present application, when the inductor current IL is smaller, the voltage value at the node E2 of the negative input terminal of the comparison module 210And the voltage value at the SW node of the positive input of the comparison module 210 +.>Near the supply voltage->Therefore, the comparison module 210 needs to use the common mode input range up toThe structure of the voltage is also different from the implementation in the prior art.
Some of the circuit blocks shown in fig. 3 described above are described below by way of specific embodiments, and it should be noted that the manner in which the above objects are achieved is not limited thereto, and the present embodiment is not limited thereto.
In an alternative embodiment, referring to fig. 4, fig. 4 is a schematic structural diagram of a first signal processing module according to an embodiment of the present application. As shown in fig. 4, the signal processing module 400 includes an operational amplifier 401, a first transistor 402, and a first resistor 403; the positive input terminal of the operational amplifier 401 is connected to the output terminal of the error amplifying module (e.g., the output terminal of the error amplifier 320), the negative input terminal of the operational amplifier 401 is connected to the drain of the first transistor 402, the output terminal of the operational amplifier 401 is connected to the gate of the first transistor 402, the source of the first transistor 402 is connected to the first input terminal of the signal converting module (e.g., the negative input terminal of the comparing module 210), the drain of the first transistor 402 is also connected to one end of the first resistor 403, and the other end of the first resistor 403 is used for inputting a ramp signal.
Specifically, the operational amplifier 401, the first transistor 402 and the first resistor 403 form a negative feedback loop, and if the negative feedback loop adjusts the voltage input from the negative input terminal of the operational amplifier 401 Voltage equal to error amplified signal EAO +.>The current of the first resistor 403 is equal to +.>Wherein->Amplifying the voltage value of the signal EAO for error, +.>Is the voltage value at the N1 node of the negative input of the operational amplifier 401, +.>The voltage value of the Ramp signal Ramp, R1 is the resistance value of the first resistor 403. The electricity of the first resistor 403 is according to kirchhoff's lawThe current is equal to the current at the E2 node of the negative input of the comparison module 210. In addition, the first transistor 402 is an NMOS transistor.
In another alternative embodiment, referring to fig. 5, fig. 5 is a schematic structural diagram of a second signal processing module according to an embodiment of the present application. As shown in fig. 5, the signal processing module 400 includes a second resistor 411, a third resistor 412, a second transistor 413, a third transistor 414, a fourth transistor 415, a fifth transistor 416, a sixth transistor 417, and a seventh transistor 418; the gate of the second transistor 413 is connected to the output end of the error amplifying module (such as the output end of the error amplifier 320), the source of the second transistor 413 is connected to the power supply in the signal input module through the second resistor 411, and the drain of the second transistor 413 is connected to the source of the third transistor 414; the gate of the fourth transistor 415 is used for inputting a ramp signal (e.g. connected to the oscillation module 500), the source of the fourth transistor 415 is connected to the power supply in the signal input module through the third resistor 412, and the drain of the fourth transistor 415 is connected to the source of the fifth transistor 416; the third transistor 414 and the sixth transistor 417 form a current mirror, the fifth transistor 416 and the seventh transistor 418 form a current mirror, a source of the sixth transistor 417 is connected to a source of the fifth transistor 416, and a source of the seventh transistor 418 is connected to a first input terminal of the signal conversion module (e.g., a negative input terminal of the comparison module 210).
Specifically, the second transistor 413 and the fourth transistor 415 are PMOS transistors, and the third transistor 414, the sixth transistor 417, the fifth transistor 416, and the seventh transistor 418 are NMOS transistors.
The current value of the second resistor 411 is equal toThe current value of the third resistor 412 is equal to +.>Wherein->For the voltage value of the power supply in the signal input module, < >>Amplifying the voltage value of the signal EAO for error, +.>Is the voltage value of Ramp signal Ramp, +.>For the threshold voltages of the second transistor 413 and the fourth transistor 415, +.>For the resistance value of the second resistor +.>The resistance value of the third resistor.
Optionally, the second transistor 413 and the fourth transistor 415 are PMOS transistors of the same type and are identical in size design, and a matching design is used in the layout. Optionally, the second resistor 411 and the third resistor 412 are identical in type, and the size designs are identical, and a matching design is adopted in the layout. Alternatively, the third transistor 414 is a transistor of the same type as the sixth transistor 417; the fifth transistor 416 and the seventh transistor 418 are transistors of the same type and are identical in size design, and a matching design is adopted in the layout.
Wherein the third transistor 414 and the sixth transistor 417 form a current mirror, the fifth transistor 416 and the seventh transistor 418 form a current mirror, and the current of the fifth transistor 416 is equal to the current of the third resistor 412 minus the current of the sixth transistor 417, which is equal to . Assuming that both the second resistor 411 and the third resistor 412 are designed to have a resistance equal to the design resistance R of the prior art, the current of the fifth transistor 416 is equal to。
That is to say that the first and second, the current output by the signal processing module 400 isThe voltage value at the E2 node of the negative input of the comparison module 210>Equal to->The voltage value at the SW node of the positive input of the comparison module 210 +.>Equal to->. Wherein (1)>Represents the equivalent resistance corresponding to the eighth transistor 111, < ->Representing the on-resistance of the high-side switch, such as the on-resistance of the ninth transistor 231 in the power conversion module 230.
In an alternative embodiment, referring to fig. 6, fig. 6 shows a schematic structural diagram of a power conversion module according to an embodiment of the present application, and as shown in fig. 6, a power conversion module 230 includes a switch unit 232, a capacitor unit 234, an inductor unit 233, and a ninth transistor 231; the gate of the ninth transistor 231 is connected to the first output terminal of the pwm controller 220, the source of the ninth transistor 231 is connected to the power supply in the signal input module, the drain of the ninth transistor 231 is connected to the first terminal of the switching unit 232, the second terminal of the switching unit 232 is connected to the second output terminal of the pwm controller 220, the drain of the ninth transistor 231 is also connected to one end of the inductance unit 233 and the positive input terminal of the comparison module 210, and the other end of the inductance unit 233 is connected to one end of the capacitance unit 234 and the input terminal of the error amplifying module (e.g., the input terminal of the voltage sampler 310); the other end of the capacitor unit and the third end of the switch unit 232 are grounded.
The gate of the ninth transistor 231 is connected to the first output terminal DH of the pwm controller 220 as the first input terminal DH of the power conversion module 230, the second terminal DL of the switching unit 232 is connected to the second output terminal DL of the pwm controller 220 as the second input terminal DL of the power conversion module 230, and the end of the inductance unit 233, which is not connected to the first terminal of the switching unit 232, is connected to the input terminal of the voltage sampler 310 as the first output terminal OUT of the power conversion module 230.
Alternatively, the eighth transistor 111 and the ninth transistor 231 should be the same type of device except that the aspect ratio is different, for example: the width-to-length ratio of the ninth transistor 231 is larger than that of the eighth transistor 111. Optionally, the eighth transistor 111 and the ninth transistor 231 employ matched layout designs. The eighth transistor 111 and the ninth transistor 231 may be PMOS transistors, and the eighth transistor 111 and the ninth transistor 231 may be NMOS transistors or other transistors, for example: bipolar transistors (NPN type or PNP type) may be IGBTs (insulated gate bipolar transistors).
Here, the first output terminal DH of the pwm controller 220 outputs a high-side duty control signal, and the second output terminal DL of the pwm controller 222 outputs a low-side duty control signal for driving the switching unit 232 of the power conversion module 230 to be turned on or off so as to input the power supply voltage under the control of the switching unit 232 Converted into a voltage output signal->。
In an alternative embodiment, referring to fig. 7, fig. 7 shows a schematic structural diagram of a comparison module provided by an embodiment of the present application, and as shown in fig. 7, the comparison module 210 includes a tenth transistor 211, an eleventh transistor 212, a first current source 213, a second current source 214, and an inverter 215; the source of the tenth transistor 211 is connected to the second output DL of the power conversion module, the drain of the tenth transistor 211 is connected to one end of the first current source 213, the gate of the tenth transistor 211 is connected to the drain of the tenth transistor 211, the drain of the tenth transistor 211 is connected to the gate of the eleventh transistor 212, the source of the eleventh transistor 212 is connected to the output of the signal processing module 400, the drain of the eleventh transistor 212 is connected to one end of the second current source 214 and to the input of the inverter 215, and the output of the inverter 215 is connected to the input of the pwm controller 220; the other end of the first current source 213 and the other end of the second current source 214 are grounded.
Specifically, when the voltage value at the SW node of the positive input terminal of the comparison module 210Voltage value at node E2 below the negative input of comparison module 210 +. >At this time, the gate voltage of the tenth transistor 211 is low, resulting in a large current flowing through the eleventh transistor 212, and at this time, the input voltage of the inverter 215 is at a high level, and the voltage of the PWMO signal after passing through the inverter 215 is at a low level.
When the voltage value at the SW node of the positive input terminal of the comparison module 210A voltage value at the E2 node higher than the negative input of the comparison module 210 +.>At this time, the gate voltage of the tenth transistor 211 is high, resulting in a small current flowing through the eleventh transistor 212, and at this time, the input voltage of the inverter 215 is low, and the voltage of the PWMO signal after passing through the inverter 215 is high. The common mode input range of this comparison module 210 is large, and can be as high as approximately the supply voltage +.>Even slightly above the supply voltage +.>。
Alternatively, the tenth transistor 211 and the eleventh transistor 212 are the same type of transistors; the first current source 213 and the second current source 214 are current sources generating the same current value. Illustratively, the tenth transistor 211 and the eleventh transistor 212 are PMOS transistors, and the tenth transistor 211 and the eleventh transistor 212 are PMOS transistors of the same type, and the size designs are identical, and a matching design is adopted in the layout. The first current source 213 and the second current source 214 have the same current value, and the first current source 213 and the second current source 214 adopt a matching design in the layout.
In addition, the scheme of the present application may be applied to a power converter, that is, the power converter may include the dc-dc converter described in the above embodiment.
The DC-DC converter provided by the embodiment of the application can achieve the equivalent comparison result which is the same as that of the DC-DC converter in the prior art while canceling the current sampling circuit, and can not cause distortion of a current sampling value due to the performance limitation of the current sampling circuit; the inductor with smaller inductance value can be used, the occupied area of the circuit is smaller, and the response speed can be improved while the circuit structure is simplified.
Finally, it should be noted that: the above examples are only specific embodiments of the present application, and are not intended to limit the scope of the present application, but it should be understood by those skilled in the art that the present application is not limited thereto, and that the present application is described in detail with reference to the foregoing examples: any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or perform equivalent substitution of some of the technical features, while remaining within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.

Claims (10)

1. A dc-dc converter, comprising: the device comprises a signal processing module, a signal input module, a signal conversion module and an error amplification module, wherein the output ends of the signal processing module and the signal input module are connected with the input end of the signal conversion module, the first output end of the signal conversion module is connected with the input end of the signal processing module through the error amplification module, and the second output end of the signal conversion module is connected with the input end of the signal input module;
the error amplifying module is used for processing the voltage output signal output by the signal converting module into an error amplifying signal and inputting the error amplifying signal to the signal processing module;
the signal processing module is used for processing the error amplification signal and the slope signal input into the signal processing module and outputting a current signal;
the signal input module is used for determining a voltage division signal according to the current signal output by the signal processing module and the on-resistance in the signal input module, determining a first voltage input signal according to the voltage division signal and the power supply voltage in the signal input module, and inputting the first voltage input signal to the signal conversion module;
The signal conversion module is used for determining a voltage output signal according to the first voltage input signal and the second voltage input signal and outputting the voltage output signal to the error amplification module; wherein the second voltage input signal is determined based on the supply voltage and an inductor current of a power conversion module of the signal conversion module.
2. The dc-dc converter of claim 1, wherein the signal processing module comprises an operational amplifier, a first transistor, and a first resistor;
the positive electrode input end of the operational amplifier is connected with the output end of the error amplifying module, the negative electrode input end of the operational amplifier is connected with the drain electrode of the first transistor, the output end of the operational amplifier is connected with the grid electrode of the first transistor, the source electrode of the first transistor is connected with the first input end of the signal conversion module, the drain electrode of the first transistor is also connected with one end of the first resistor, and the other end of the first resistor is used for inputting a slope signal.
3. The dc-dc converter of claim 1, wherein the signal processing module comprises a second resistor, a third resistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, and a seventh transistor;
The grid electrode of the second transistor is connected with the output end of the error amplifying module, the source electrode of the second transistor is connected with the power supply in the signal input module through the second resistor, and the drain electrode of the second transistor is connected with the source electrode of the third transistor; the grid electrode of the fourth transistor is used for inputting a slope signal, the source electrode of the fourth transistor is connected with a power supply in the signal input module through the third resistor, and the drain electrode of the fourth transistor is connected with the source electrode of the fifth transistor;
the third transistor and the sixth transistor form a current mirror, the fifth transistor and the seventh transistor form a current mirror, a source electrode of the sixth transistor is connected with a source electrode of the fifth transistor, and a source electrode of the seventh transistor is connected with a first input end of the signal conversion module.
4. A dc-dc converter according to claim 2 or 3, further comprising an oscillation module, the oscillation module being connected to the signal processing module, the oscillation module being configured to input a ramp signal to the signal processing module.
5. The dc-dc converter of claim 1, wherein the signal input module comprises a power supply module and an eighth transistor;
The output end of the power supply module is connected with the source electrode of the eighth transistor, the drain electrode of the eighth transistor is connected with the first input end of the signal conversion module, and the grid electrode of the eighth transistor is connected with the output end of the pulse width modulation controller in the signal conversion module.
6. The dc-dc converter of claim 1, wherein the signal conversion module comprises a comparison module, a pulse width modulation controller, and a power conversion module;
the negative electrode input end of the comparison module is connected with the output end of the signal processing module and the output end of the signal input module, the positive electrode input end of the comparison module is connected with the second output end of the power conversion module, and the output end of the comparison module is connected with the input end of the pulse width modulation controller; the first output end of the pulse width modulation controller is connected with the first input end of the power conversion module and the input end of the signal input module, the second output end of the pulse width modulation controller is connected with the second input end of the power conversion module, and the first output end of the power conversion module is connected with the input end of the error amplification module.
7. The dc-dc converter of claim 6, wherein the power conversion module comprises a switching unit, a capacitance unit, an inductance unit, and a ninth transistor;
the grid electrode of the ninth transistor is connected with the first output end of the pulse width modulation controller, the source electrode of the ninth transistor is connected with a power supply in the signal input module, the drain electrode of the ninth transistor is connected with the first end of the switch unit, the second end of the switch unit is connected with the second output end of the pulse width modulation controller, the drain electrode of the ninth transistor is also connected with one end of the inductance unit and the positive electrode input end of the comparison module, and the other end of the inductance unit is connected with one end of the capacitance unit and the input end of the error amplification module;
the other end of the capacitor unit and the third end of the switch unit are grounded.
8. The dc-dc converter of claim 7, wherein the on-resistance in the signal input module is in a preset ratio to the on-resistance of the ninth transistor;
wherein the preset ratio ranges from 10 to 100000.
9. The dc-dc converter of claim 6, wherein the comparison module comprises a tenth transistor, an eleventh transistor, a first current source, a second current source, and an inverter;
the source electrode of the tenth transistor is connected with the second output end of the power conversion module, the drain electrode of the tenth transistor is connected with one end of the first current source, the grid electrode of the tenth transistor is connected with the drain electrode of the tenth transistor, the drain electrode of the tenth transistor is connected with the grid electrode of the eleventh transistor, the source electrode of the eleventh transistor is connected with the output end of the signal processing module, the drain electrode of the eleventh transistor is connected with one end of the second current source and the input end of the inverter, and the output end of the inverter is connected with the input end of the pulse width modulation controller;
the other end of the first current source and the other end of the second current source are grounded.
10. The dc-dc converter of claim 1, wherein the error amplification module comprises a voltage sampler and an error amplifier;
the input end of the voltage sampler is connected with the output end of the signal conversion module, the output end of the voltage sampler is connected with the negative electrode input end of the error amplifier, the positive electrode input end of the error amplifier is used for inputting reference voltage, and the output end of the error amplifier is connected with the input end of the signal processing module.
CN202311445648.5A 2023-11-02 2023-11-02 DC-DC converter Active CN117175938B (en)

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CN115940643A (en) * 2022-11-25 2023-04-07 上海艾为微电子技术有限公司 DC-DC converter and control system and control method thereof

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JP2012016123A (en) * 2010-06-30 2012-01-19 Toshiba Corp Dc-dc converter
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