CN117175219A - VO 2-based same-band terahertz frequency switchable multifunctional super-surface device - Google Patents
VO 2-based same-band terahertz frequency switchable multifunctional super-surface device Download PDFInfo
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- CN117175219A CN117175219A CN202311224756.XA CN202311224756A CN117175219A CN 117175219 A CN117175219 A CN 117175219A CN 202311224756 A CN202311224756 A CN 202311224756A CN 117175219 A CN117175219 A CN 117175219A
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- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000010287 polarization Effects 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000033228 biological regulation Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000006096 absorbing agent Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000005388 cross polarization Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 241000239290 Araneae Species 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
Abstract
The utility model provides a multi-functional super surface device of same wave band terahertz frequency switchability based on VO2, including the dielectric layer of square type, fixedly be provided with one deck metal level in the bottom surface of dielectric layer, fixedly be provided with opening square ring in the top surface edge of dielectric layer, opening square ring's side is parallel arrangement each other with the side of dielectric layer top surface respectively, fixedly be provided with cross structural layer in the middle part of dielectric layer top surface, cross structural layer and opening square ring are the vanadium dioxide material, through the conductivity of control temperature regulation cross structural layer and opening square ring. The invention realizes the same-band terahertz frequency switchable multifunctional in a single metamaterial structure by changing the external temperature based on the phase change characteristic of vanadium dioxide, achieves the purpose of active control, and has a relatively clear application scene in the terahertz related technology.
Description
Technical Field
The invention relates to a super-surface device, in particular to a VO 2-based multi-functional super-surface device with switchable terahertz frequency in the same wave band.
Background
Terahertz waves (THz) are electromagnetic waves with frequencies between 0.1 and 10THz (wavelength between 30 and 3000 μm), which are located at special positions between microwaves and infrared rays, and have the advantages of both partial microwave and high-frequency electromagnetic waves. With the rapid development of terahertz technology, the application of terahertz-based metamaterials has more possibility, and many applications in modulator, polarization converter, absorber and the like are receiving much attention. The metamaterial absorption, sensing and polarization conversion are integrated into one device, so that the device has an important role in a THz wave band, and the multifunctional device can switch functions according to the real-time requirement of a system, is more intelligently adapted to application scenes, improves the sustainability of the environment, and also greatly reduces the period and cost of device development. In the aspect of radar detection, the terahertz radar has high space, time resolution and confidentiality, has anti-stealth capability by virtue of ultra-narrow band beams, and can detect an object to be detected in a complex environment. In the field of communication, terahertz waves have the advantages of high transmission rate, wide transmission bandwidth, large transmission data, strong penetrability and the like.
The super surface realizes electromagnetic characteristics by utilizing a sub-wavelength structure, and has extraordinary physical characteristics which are not possessed by natural materials, such as negative dielectric constant, negative refraction and the like. In recent years, the super surface is widely applied to the regulation and control of different degrees of freedom such as electromagnetic wave phase, amplitude, polarization and the like. The novel optical phenomena and characteristics exhibited by the supersurfaces provide an efficient way for the design of compact optical devices. Most of the metamaterials are specially designed for realizing a single function, and the temperature control phase change characteristic of vanadium dioxide is utilized to integrate the metamaterials in an absorption, sensing and polarization conversion mode into one device, so that the metamaterials have an important role in a THz wave band, and the multifunctional device not only can switch functions according to the real-time requirement of a system, but also can be more intelligently adapted to application scenes, improve the sustainability of the environment, and greatly reduce the development period and cost of the device. Therefore, how to integrate the diversified and switchable functions into a single metamaterial is a technical problem to be solved.
Disclosure of Invention
Aiming at the requirements in the prior art, the invention provides a VO 2-based multifunctional super-surface device with switchable terahertz frequency in the same wave band, and aims to realize the super-surface device with the function of switching the terahertz frequency in the same wave band.
The utility model provides a multi-functional super surface device of same wave band terahertz frequency switchability based on VO2, including square type medium layer, medium layer's bottom surface and top surface are square, fixedly provided with one deck metal layer in medium layer's bottom surface, fixedly provided with opening square ring in medium layer's top surface edge department, opening square ring's side is parallel arrangement each other with medium layer's side respectively, fixedly provided with cross structural layer in medium layer top surface's middle part, cross structural layer's two line-shaped structure's central line coincides with opening square ring's diagonal respectively, opening square ring is equipped with two openings, these two openings set up respectively on opening square ring's two adjacent sides, line structural tip's width is the same with the length of opening, cross structural layer and opening square ring are vanadium dioxide material, through controlling the conductivity of temperature regulation cross structural layer and opening square ring; the terahertz wave is incident along the direction perpendicular to the top surface of the dielectric layer, the conductivity of the cross-shaped structural layer and the open square ring is sigma=20S/m when the cross-shaped structural layer and the open square ring are in an insulating state, and the terahertz wave is used for converting the incident linear polarization terahertz wave into circular polarization terahertz wave within the range of 0.3-1.4 THz; conductivity of both the cross-shaped structural layer and the open square ring when in the metallic state is σ=2×10 5 S/m, is used for absorbing terahertz waves in the frequency range of 0.45-1.15 THz.
The method further comprises the following steps: the material of dielectric layer is silica, and the length P=85um of dielectric layer top surface, and the outside length L1=76um of opening square ring, the inside length L2=75um of opening square ring, the length L4=64um of a font structure, the width W=20um of a font structure end, thickness h1=45um of dielectric layer, and the thickness of cross structural layer, opening square ring and metal layer are all t=0.5 um, and the material of metal layer is gold, and the conductivity of metal layer is sigma (Au) =4.09×10 7 S/m。
The invention has the beneficial effects that: the invention realizes the same-band terahertz frequency switchable multifunctional in a single metamaterial structure by changing the external temperature based on the phase change characteristic of vanadium dioxide, achieves the purpose of active control, and has a relatively clear application scene in the terahertz related technology. The frequency bandwidth of the absorber with the absorption rate of more than 80% is greatly improved under the condition of stacking three layers, the absorber is prepared by adopting the existing three-layer stacking process, the purpose of expanding the terahertz absorption frequency band is achieved in the modes of complicated other procedures, high process difficulty and high preparation cost, the application of the broadband terahertz metamaterial absorber in practice is promoted, the application efficiency of the broadband terahertz metamaterial absorber is improved, the preparation process is easy to realize, and the preparation cost is reduced.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a graph showing the reflection coefficient of the present invention as a function of frequency when vanadium dioxide is in an insulating state;
FIG. 4 is a plot of polarization conversion efficiency versus frequency for the present invention when vanadium dioxide is in an insulating state;
FIG. 5 is an illustration of the absorption characteristics of the present invention for x-polarized light incidence when vanadium dioxide is in the metallic state;
FIG. 6 is an absorption characteristic of the present invention for y polarized light incidence when vanadium dioxide is in the metallic state;
FIG. 7 is a graph showing the effect of structural parameters on polarization conversion when vanadium dioxide is in an insulating state;
FIG. 8 is a graph showing the effect of structural parameters on polarization conversion when vanadium dioxide is in an insulating state;
FIG. 9 is an absorption spectrum of the present invention at different polarization angles;
fig. 10 is a graph of the resonant frequency shift of the present invention when the refractive index is changed from n=1.33 to n=1.48;
fig. 11 is a linear fit of the present invention as the refractive index changes from n=1.33 to n=1.48.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings. Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention. The terms left, middle, right, upper, lower, etc. in the embodiments of the present invention are merely relative concepts or references to the normal use state of the product, and should not be construed as limiting.
The VO 2-based multi-functional super-surface device with the terahertz frequency switchable in the same wave band is shown in a figure 1, and comprises a square dielectric layer, wherein the bottom surface and the top surface of the dielectric layer are square, a metal layer is fixedly arranged on the bottom surface of the dielectric layer, an open square ring is fixedly arranged at the edge of the top surface of the dielectric layer, the side edges of the open square ring are respectively arranged in parallel with the side edges of the top surface of the dielectric layer, a cross-shaped structural layer is fixedly arranged in the middle of the top surface of the dielectric layer, the central lines of two straight-line structures of the cross-shaped structural layer are respectively overlapped with the diagonal lines of the open square ring, the open square ring is provided with two openings, the two openings are respectively arranged on the two side edges adjacent to the open square ring, the width of the end of the straight-line structure is the same as the length of the opening, the cross-shaped structural layer and the open square ring are made of vanadium dioxide, and the conductivity of the cross-shaped structural layer and the open square ring is adjusted by controlling the temperature; the terahertz wave is incident along the direction perpendicular to the top surface of the dielectric layer, the conductivity of the cross-shaped structural layer and the open square ring is sigma=20S/m when the cross-shaped structural layer and the open square ring are in an insulating state, and the terahertz wave is used for converting the incident linear polarization terahertz wave into circular polarization terahertz wave within the range of 0.3-1.4 THz; conductivity of both the cross-shaped structural layer and the open square ring when in the metallic state is σ=2×10 5 S/m, is used for absorbing terahertz waves in the frequency range of 0.45-1.15 THz.
As shown in fig. 2, the dielectric layer is made of silicon dioxide, the side length p=85 um of the top surface of the dielectric layer, the outer side length l1=76 um of the square ring, the inner side length l2=74 um of the square ring, the length l4=64 um of the straight line structure, the width w=20 um of the end of the straight line structure, the thickness h1=45 um of the dielectric layer, and the cross structureThe thicknesses of the layer, the open square ring and the metal layer are t=0.5 um, the metal layer is made of gold, and the conductivity of the metal layer is sigma (Au) =4.09×10 7 S/m。
The conductivity of the vanadium dioxide material is regulated by controlling the temperature. Vanadium dioxide is a thermally controlled phase change material, whose conductivity is subject to a large abrupt change during the phase change process. Vanadium dioxide behaves as an insulator below the critical temperature (68 ℃) and as a metal above the critical temperature. Therefore, vanadium dioxide can be heated by utilizing the characteristic, and the incident electromagnetic wave can be regulated and controlled.
The multi-physical field coupling simulation software COMSOL Multiphysics based on the Finite Element Method (FEM) is used for modeling, optimizing and simulating the designed multi-functional super-surface device based on the VO2 and switchable in the terahertz frequency of the same wave band. In the terahertz frequency band under study, the transmission part is restrained due to the existence of the metal layer and the thickness of the metal layer is far greater than the skin depth of electromagnetic waves in two states of vanadium dioxide, so that the transmittance T (omega) of the whole metamaterial structure is infinitely close to 0. According to the equivalent medium theory, the impedance value of the incident position of the surface of the invention is completely matched with the free space by carrying out parameter adjustment and optimization on the structure.
The conductivity of the vanadium dioxide material is set to be 20S/m and 200000S/m so as to simulate the conditions of an insulating state and a metal state of the vanadium dioxide under different temperature conditions. The calculation formulas of the polarization conversion efficiency and the absorption efficiency A (w) are as follows:
A(w)＝1-R(w)-T(w) (3)
wherein PCR x And PCR y Polarization conversion rates in an incident transverse electric TE mode and a transverse magnetic TM mode respectively, rxx represents the transverse magnetic TE modeThe co-polarized reflectance under the formula (electric field along x-direction), ryx, represents the cross-polarized reflectance in TE mode. Ryy represents the co-polarized reflectance in transverse electric (TM) mode (electric field along y direction), rxy represents the cross-polarized reflectance in TM mode; reflectivity R (ω) = |s 11 | 2 Transmittance T (ω) = |s 21 | 2 . FIG. three is a diagram showing a simulation, according to Rxx, ryx, ryy, rxy of FIG. three, PCR can be obtained according to the formulas (1) (2) x And PCR y 。
As shown in fig. 3 to 6, when vanadium dioxide is in an insulating state, the dimensions L4 and W of the cross-shaped structural layer have a large influence on polarization characteristics. As the dimension L4 of the central metal spider increases, the occurrence of a red shift in frequency at high frequencies narrows the operating bandwidth. When the short side W of the center cross increases, the conversion efficiency decreases although the frequency does not shift. When the dimensions l4=64 um and w=20um of the cross-shaped structural layer, the co-polarization reflection coefficient is relatively low and the cross-polarization reflection coefficient is high in the frequency range of 0.45-1.23 THz, so that cross-polarization conversion can be realized. The conversion from linear polarization to circular polarization can be realized in the frequency range of 1.42-0.45 terahertz and 1.23-1.28 terahertz. As shown in fig. 7 and 8, the long side L4 of the cross-shaped structural layer varies from 60um to 68um, and when l4=60 um, the frequency is 1.26THz; when l4=60 um, the frequency is at 1.2THz; the short side W of the center cross is in the range of 16 um-24 um, and the frequency is relatively stable.
When vanadium dioxide is in a metal state, the influence of the unit structure period P on the absorption characteristic is large, and when the impedance of the absorber is matched with the impedance of the free space through adjustment of the P, terahertz waves with the frequency of 0.45-1.23 THz enter the inner wall of the absorber to the maximum extent, and resonance is generated with the terahertz wave absorber, so that the absorption loss of the terahertz wave absorber is maximum; when P is increased, the absorption peak frequency is blue shifted, and the absorption intensity is basically unchanged; when p=85 um, the absorptance is greater than 80% in the frequency range of 0.45 to 1.23THz, and the absorptances at 0.53THz and 1.02THz are 0.99913 and 0.97543.
As shown in FIG. 9, in the range of 0-90 degrees of polarization angle, the change of the polarization angle has little change on the resonance frequency and the absorption rate, and the absorption spectrum has no change, so that the invention has good polarization insensitivity.
As shown in fig. 10 and 11, when vanadium dioxide is in a metallic state, the sensing function can be analyzed by the resonant frequency shift of the present invention and its linear fit as the refractive index of the solution concentration to be measured is changed. In the frequency range of 0.45-1.15 THz, common aqueous solutions (sodium chloride, glucose, sucrose, etc.) with refractive indices (n) between 1.33 and 1.48 are subjected to sensing analysis, and the sensing sensitivity at the frequency point of 0.53THz is about 132.38GHz/RIU. Compared with the traditional biological sensing technology, the invention can realize high-efficiency and high-sensitivity label-free nondestructive detection, effectively overcomes the defects of the biological sensing technology, and has wide development prospect in the field of sensing.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (2)
1. The utility model provides a multi-functional super surface device of same wave band terahertz frequency switchability based on VO2 which characterized in that: the dielectric layer comprises a square dielectric layer, the bottom surface and the top surface of the dielectric layer are square, a metal layer is fixedly arranged on the bottom surface of the dielectric layer, an opening square ring is fixedly arranged at the edge of the top surface of the dielectric layer, the side edges of the opening square ring are respectively arranged in parallel with the side edges of the top surface of the dielectric layer, a cross-shaped structural layer is fixedly arranged in the middle of the top surface of the dielectric layer, the central lines of two straight-line structures of the cross-shaped structural layer are respectively overlapped with the diagonal lines of the opening square ring, the opening square ring is provided with two openings, the two openings are respectively arranged on the two side edges adjacent to the opening square ring, and the width of one-line structural end is equal to the opening width of the opening square ringThe lengths of the openings are the same, the cross-shaped structural layer and the open square ring are made of vanadium dioxide, and the conductivity of the cross-shaped structural layer and the conductivity of the open square ring are adjusted by controlling the temperature; the terahertz wave is incident along the direction perpendicular to the top surface of the dielectric layer, the conductivity of the cross-shaped structural layer and the open square ring is sigma=20S/m when the cross-shaped structural layer and the open square ring are in an insulating state, and the terahertz wave is used for converting the incident linear polarization terahertz wave into circular polarization terahertz wave within the range of 0.3-1.4 THz; conductivity of both the cross-shaped structural layer and the open square ring when in the metallic state is σ=2×10 5 S/m, is used for absorbing terahertz waves in the frequency range of 0.45-1.15 THz.
2. The VO 2-based same-band terahertz frequency switchable multifunctional subsurface device of claim 1, wherein: the material of dielectric layer is silica, and the length P=85um of dielectric layer top surface, and the outside length L1=76um of opening square ring, the inside length L2=75um of opening square ring, the length L4=64um of a font structure, the width W=20um of a font structure end, thickness h1=45um of dielectric layer, and the thickness of cross structural layer, opening square ring and metal layer are all t=0.5 um, and the material of metal layer is gold, and the conductivity of metal layer is sigma (Au) =4.09×10 7 S/m。
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311224756.XA CN117175219A (en) | 2023-09-21 | 2023-09-21 | VO 2-based same-band terahertz frequency switchable multifunctional super-surface device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311224756.XA CN117175219A (en) | 2023-09-21 | 2023-09-21 | VO 2-based same-band terahertz frequency switchable multifunctional super-surface device |
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