CN117153770A - 一种半导体结构的形成方法 - Google Patents
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Abstract
本发明提供一种半导体结构的形成方法,包括提供衬底,衬底表面依次覆盖有硬掩膜层、BARC层和光刻胶;对光刻胶进行曝光和显影,曝光显影之后光刻胶具有浅沟槽隔离刻蚀的图案;在图案化的光刻胶定义下依次对BARC层和硬掩膜层进行刻蚀,将光刻胶的图案转移到BARC层和硬掩膜层上;利用四氟化碳气体和氮气按时间刻蚀去除光刻胶表面由于刻蚀形成的硬表层;利用氧气和氮气刻蚀去除剩余的光刻胶和BARC层;以硬掩膜层为遮挡,对衬底进行刻蚀,在衬底中刻蚀形成浅浅沟槽。本发明在现有光刻胶去除工艺基础上,增加利用四氟化碳气体和氮气刻蚀去除光刻胶表面硬表层的工艺,可有效去除光刻胶表面由于刻蚀形成的硬表层,解决了BARC剥离(peeling)缺陷的问题,提高了良率。
Description
技术领域
本发明涉及半导体制造技术领域,具体涉及一种半导体结构的形成方法。
背景技术
在制作半导体器件时,一般会在衬底上制作浅沟槽隔离(STI),利用浅沟槽隔离定义出有源区(AA)。具体地,硅衬底(silicon)向上依次形成有氧化层(oxide),硬掩膜层(HM),底部抗反射层(BARC),以及光刻胶(PR);通常STI的刻蚀工艺包括如下的几个步骤:如图1至图5所示,形成具有浅沟槽隔离图案的光刻胶图形,底部抗反射层刻蚀(BARCOpening),硬掩膜层刻蚀(HM Opening),光刻胶去除(PR strip),硅衬底刻蚀(siliconEtch)等。
根据缺陷(defect)扫描图像显示,如图6所示,90BCM平台在AA_PB站点出现条状缺陷,往前追朔发现,在AA_ASI有完整条形的BARC残留(residue)。究其原因,如图7和图8所示,归结于PR去除前等离子体(Plasma)刻蚀条件下的BARC层和硬掩膜层刻蚀使得PR硬化,PR表面形成一层硬表层(Crust),难以祛除,因而出现BARC剥离(peeling)缺陷问题。
发明内容
为了解决上述现有技术存在的问题,本发明提供一种半导体结构的形成方法,用以有效去除PR表面Crust,从源头解决BARC Peeling缺陷问题。
本发明提供一种半导体结构的形成方法,包括以下步骤:
步骤一、提供衬底,所述衬底表面依次覆盖有硬掩膜层、BARC层和光刻胶;
步骤二、对所述光刻胶进行曝光和显影,曝光显影之后所述光刻胶具有浅沟槽隔离刻蚀的图案;
步骤三、在图案化的光刻胶定义下对所述BARC层进行刻蚀,将光刻胶的图案转移到所述BARC层上;
步骤四、在图案化的光刻胶定义下对所述硬掩膜层进行刻蚀,将光刻胶的图案转移到所述硬掩膜层上;
步骤五、利用四氟化碳气体和氮气按时间刻蚀去除所述光刻胶表面由于刻蚀形成的硬表层;
步骤六、利用氧气和氮气刻蚀去除剩余的所述光刻胶和所述BARC层;
步骤七、以所述硬掩膜层为遮挡,对所述衬底进行刻蚀,在所述衬底中刻蚀形成浅沟槽隔离。
优选地,步骤一中所述衬底为硅衬底。
优选地,步骤一中所述硬掩膜层的材料为氮化钛或者氮化硅。
优选地,步骤三和步骤四中所述刻蚀为等离子体干法刻蚀。
优选地,步骤五中所述按时间刻蚀的时间为5秒内。
优选地,步骤五中所述由于刻蚀形成的硬表层具体为:由于等离子体轰击,刻蚀产物喷溅在所述光刻胶表面形成一层硬表层,使得所述光刻胶硬化。
本发明通过优化光刻胶去除工艺步骤,使用CF4/N2气体,CF4可刻蚀光刻胶表面Crust,N2提供一定轰击能力,使用O2/N2气体,O2去除剩余PR,N2持续轰击,避免残留,可以有效去除PR表面Crust,从源头解决BARC Peeling缺陷问题。
附图说明
通过以下参照附图对本发明实施例的描述,本发明的上述以及其它目的、特征和优点将更为清楚,在附图中:
图1至图5显示为现有半导体结构的形成方法的示意图;
图6显示为90BCM平台在AA_PB站点出现条状缺陷的示意图;
图7和图8显示为等离子体轰击下的光刻胶和光刻胶表面形成一层硬表层(Crust)的示意图;
图9显示为本发明实施例的半导体结构的形成方法的流程图。
具体实施方式
以下基于实施例对本发明进行描述,但是本发明并不仅仅限于这些实施例。在下文对本发明的细节描述中,详尽描述了一些特定的细节部分。对本领域技术人员来说没有这些细节部分的描述也可以完全理解本发明。为了避免混淆本发明的实质,公知的方法、过程、流程、元件和电路并没有详细叙述。
此外,本领域普通技术人员应当理解,在此提供的附图都是为了说明的目的,并且附图不一定是按比例绘制的。
除非上下文明确要求,否则整个申请文件中的“包括”、“包含”等类似词语应当解释为包含的含义而不是排他或穷举的含义;也就是说,是“包括但不限于”的含义。
在本发明的描述中,需要理解的是,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性。此外,在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上。
图9显示为本发明实施例的半导体结构的形成方法的流程图。如图9所示,本发明实施例的半导体结构的形成方法包括以下步骤:
步骤一、提供衬底,衬底表面依次覆盖有硬掩膜层、BARC层和光刻胶。
衬底的材料可以为硅、锗、硅锗或碳化硅等,也可以是绝缘体上覆硅(SOI)或者绝缘体上覆锗(GOI),或者还可以为其他的材料,例如砷化镓等Ⅲ、Ⅴ族化合物。本实施例中的衬底是硅衬底,进一步的,其可以是未掺杂的或者轻度掺杂的硅衬底。
硬掩膜层(HM)的材料有多种,本发明实施例中,硬质掩膜层的材料为氮化钛或者氮化硅。通常为氮化硅(SiN),其形成方法可以为化学气相沉积(CVD)或者物理气相沉积(PVD)。
本发明实施例中,在硬掩膜层上涂布一层底部抗反射层(BARC)。然后,采用烘烤步骤来固化BARC层,以便让涂层均匀地附着在硬掩膜层表面上。在BARC层固化后,再在其上涂布一层光阻材料。
步骤二、对光刻胶进行曝光和显影,曝光显影之后光刻胶具有浅沟槽隔离刻蚀的图案。
步骤三、在图案化的光刻胶定义下对BARC层进行刻蚀,将光刻胶的图案转移到BARC层上。
步骤四、在图案化的光刻胶定义下对硬掩膜层进行刻蚀,将光刻胶的图案转移到硬掩膜层上。
本发明实施例中,利用等离子体干法刻蚀工艺,图案化的光刻胶作为掩膜,对BARC层和硬掩膜层进行刻蚀,去除未被图案化的光刻胶覆盖的区域内的图案化的光刻胶。
其中,如图7和图8所示,刻蚀过程都会产生大量的刻蚀产物,这些产物喷溅到光刻胶的表面,在光刻胶表面形成一层硬表层,使得光刻胶硬化,从而产生后续的BARC剥离(peeling)缺陷问题。
步骤五、利用四氟化碳气体和氮气按时间刻蚀去除光刻胶表面由于刻蚀形成的硬表层。
本发明实施例中,由于刻蚀形成的硬表层具体为:由于等离子体轰击,刻蚀产物喷溅在光刻胶表面形成一层硬表层,使得光刻胶硬化。为了避免后续BARC剥离(peeling)缺陷的产生,利用四氟化碳CF4气体和氮气N2按时间刻蚀,并且刻蚀的时间在5秒内。CF4可刻蚀部分Crust,N2提供一定轰击能力,同时需严格控制时间在5S以内,避免刻蚀下方硬掩膜层SIN。
步骤六、利用氧气和氮气刻蚀去除剩余的光刻胶和BARC层。
传统主要光刻胶去除方法采用湿法去胶,成本低效率高,但随着技术不断迭代更新,越来越多IC制造商开始采用干法式去胶,干法式去胶工艺不同于传统的湿法式去胶工艺,它不需要浸泡化学溶剂,也不用烘干,去胶过程更容易控制,避免过多消耗基底,提高产品成品率。干法式去胶又被称为等离子去胶,其原理同等离子清洗类似,主要通过氧原子核和光刻胶在等离子体环境中发生反应来去除光刻胶,由于光刻胶的基本成分是碳氢有机物,在射频或微波作用下,氧气电离成氧原子并与光刻胶发生化学反应,生成一氧化碳,二氧化碳和水等,再通过泵被真空抽走,完成光刻胶的去除。
本发明实施例中,使用O2/N2气体,氧气O2去除剩余PR,氮气N2持续轰击,避免残留,可以有效去除PR表面Crust,从源头解决BARC Peeling缺陷问题。
步骤七、以硬掩膜层为遮挡,对衬底进行刻蚀,在衬底中刻蚀形成浅沟槽隔离。
本发明实施例中,对衬底进行刻蚀,刻蚀的方法为干法刻蚀。其中,干法刻蚀工艺包括但不限于:反应离子刻蚀(RIE)、离子束刻蚀、等离子体刻蚀、激光烧蚀或者这些方法的任意组合。可以使用单一的制造方法,或者也可以使用多于一个的制造方法。
本发明的半导体结构形成方法将一步去胶步骤改为两步,在进行现有光刻胶去除工艺之前,利用四氟化碳气体和氮气刻蚀去除光刻胶表面硬表层,由此可有效去除光刻胶表面由于刻蚀形成的硬表层,解决了BARC剥离(peeling)缺陷的问题,提高了良率。
以上所述仅为本发明的优选实施例,并不用于限制本发明,对于本领域技术人员而言,本发明可以有各种改动和变化。凡在本发明的精神和原理之内所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (6)
1.一种半导体结构的形成方法,其特征在于,包括以下步骤:
步骤一、提供衬底,所述衬底表面依次覆盖有硬掩膜层、BARC层和光刻胶;
步骤二、对所述光刻胶进行曝光和显影,曝光显影之后所述光刻胶具有浅沟槽隔离刻蚀的图案;
步骤三、在图案化的光刻胶定义下对所述BARC层进行刻蚀,将光刻胶的图案转移到所述BARC层上;
步骤四、在图案化的光刻胶定义下对所述硬掩膜层进行刻蚀,将光刻胶的图案转移到所述硬掩膜层上;
步骤五、利用四氟化碳气体和氮气按时间刻蚀去除所述光刻胶表面由于刻蚀形成的硬表层;
步骤六、利用氧气和氮气刻蚀去除剩余的所述光刻胶和所述BARC层;
步骤七、以所述硬掩膜层为遮挡,对所述衬底进行刻蚀,在所述衬底中刻蚀形成浅沟槽隔离。
2.根据权利要求1所述的半导体结构的形成方法,其特征在于,步骤一中所述衬底为硅衬底。
3.根据权利要求1所述的半导体结构的形成方法,其特征在于,步骤一中所述硬掩膜层的材料为氮化钛或者氮化硅。
4.根据权利要求1所述的半导体结构的形成方法,其特征在于,步骤三和步骤四中所述刻蚀为等离子体干法刻蚀。
5.根据权利要求1所述的半导体结构的形成方法,其特征在于,步骤五中所述按时间刻蚀的时间为5秒内。
6.根据权利要求4所述的半导体结构的形成方法,其特征在于,步骤五中所述由于刻蚀形成的硬表层具体为:由于等离子体轰击,刻蚀产物喷溅在所述光刻胶表面形成一层硬表层,使得所述光刻胶硬化。
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