CN117153737B - Preparation method of super junction MOS terminal resistant to avalanche breakdown - Google Patents
Preparation method of super junction MOS terminal resistant to avalanche breakdown Download PDFInfo
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a super junction MOS terminal resistant to avalanche breakdown, which comprises the following steps: detecting the point with the largest current value, calculating the distance between the point and the preset point of the primitive cell area, and judging whether the super junction MOS terminal accords with the preset standard according to the distance; according to the measured maximum current value, secondary judgment is carried out, or the corresponding parameters in the preparation process of the next super junction MOS terminal are adjusted to the corresponding values; judging whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal meets a preset standard or not, and adjusting the corresponding parameter in the preparation process of the next super junction MOS terminal to a corresponding value according to the maximum current value when the thickness is judged to be not in accordance with the preset standard; finishing the adjustment of the preparation process of the super junction MOS terminal for avalanche breakdown resistance; the invention improves the breakdown resistance of the super junction MOS terminal, and improves the impact resistance of the device while ensuring the breakdown resistance of the super junction MOS terminal.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a super junction MOS terminal resistant to avalanche breakdown.
Background
Along with the vigorous development of electronic technology in the fields of industry, traffic, consumption, medical treatment and the like, the requirements of modern society on power electronic equipment are higher and higher, a power semiconductor is one of direct factors influencing the cost and efficiency of the power electronic equipment, the prior art adjusts the spacing of terminal voltage division grooves, optimizes electric field distribution and improves device withstand voltage, but the terminal design is difficult to achieve breakdown voltage consistent with a cell area, so when voltage overshoot occurs and avalanche breakdown occurs in the cell area, a large amount of breakdown current flows from the terminal, early burnout occurs due to current hit, and the impact resistance of the device is weak and cannot meet the application requirements.
Chinese patent application No.: CN202011002666.2 discloses a MOSFET terminal structure and a method for manufacturing the same, and the invention discloses a MOSFET terminal structure and a method for manufacturing the same, comprising a terminal voltage division region, wherein a plurality of grooves are arranged in the terminal voltage division region, the depth of the grooves close to a cell region in the terminal voltage division region is gradually increased from inside to outside, and the distance between the grooves is gradually increased. Compared with the equal-depth and equal-spacing arrangement of a plurality of partial pressure grooves of a common groove MOS terminal structure, the invention adjusts the spacing of the partial pressure grooves of the terminal, optimizes the electric field distribution and improves the withstand voltage of the device. The depth of a plurality of grooves close to a cell area in the terminal groove is gradually increased from inside to outside, the distance between the grooves is gradually increased, and a large electric field of an original external cutoff ring groove is transferred to an internal partial pressure groove, so that the breakdown voltage of the whole device is improved. From the simulation results, for a 100V product, the breakdown voltage can be improved by about 20%. It can be seen that the MOSFET termination structure and the method for fabricating the same have the following problems: when voltage overshoot occurs and avalanche occurs, the breakdown current is large, so that avalanche breakdown is easily generated in the terminal area before the cell area, and the impact resistance of the device is weak and cannot meet the application requirements.
Disclosure of Invention
Therefore, the invention provides a preparation method of an avalanche breakdown resistant super junction MOS terminal, which is used for solving the problems that in the prior art, when voltage overshoot occurs and avalanche occurs, the avalanche breakdown is easily generated in a terminal area before a cell area due to high breakdown current, and the impact resistance of a device is weak and cannot meet the application requirement.
In order to achieve the above purpose, the present invention provides a method for preparing a super junction MOS terminal resistant to avalanche breakdown, comprising:
the detection module detects the point with the maximum current value in the preset point of the super junction MOS terminal, calculates the distance between the point and the preset point of the primitive cell area, and the central control module judges whether the super junction MOS terminal accords with the preset standard according to the distance;
the central control module judges whether the super junction MOS terminal accords with a preset standard according to the measured maximum current value when judging that the super junction MOS terminal does not accord with the preset standard, or adjusts the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal to a corresponding value according to the distance;
the central control module judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal accords with a preset standard according to the distance when the super junction MOS terminal is judged to be not in accordance with the preset standard for the second time, and adjusts the thickness of the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal to a corresponding value according to the measured maximum current value when the thickness is judged to be not in accordance with the preset standard;
and the central control module completes the adjustment of the preparation process of the super junction MOS terminal for avalanche breakdown resistance when completing the adjustment of corresponding parameters in the preparation process of the next super junction MOS terminal.
Further, the central control module judges whether the super junction MOS terminal meets a preset standard according to the distance between the point position of the maximum current value and the preset point position of the primitive cell area, which is measured by the detection module, and judges whether the super junction MOS terminal meets the preset standard according to the maximum current value, or judges whether the super junction MOS terminal does not meet the preset standard, or adjusts the depth of the P column of the terminal area to a corresponding value according to the distance in the preparation process of the next super junction MOS terminal when the super junction MOS terminal is judged not to meet the preset standard.
Further, the central control module judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal meets the preset standard according to the distance when the super junction MOS terminal is secondarily judged to be not in accordance with the preset standard.
Further, the central control module judges that the super junction MOS terminal meets a preset standard when judging that the thickness meets the preset standard, or adjusts the thickness of the upper region of the P column of the transition region to a corresponding value according to the maximum current value in the preparation process of the next super junction MOS terminal when judging that the thickness does not meet the preset standard.
Further, the central control module is provided with a plurality of thickness adjusting modes aiming at the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal based on the measured difference value between the maximum current value and the preset maximum current value, and the adjusting amplitudes of the thickness adjusting modes aiming at the upper region of the P column are different.
Further, when the super junction MOS terminal is judged not to meet the preset standard, the central control module is provided with a plurality of adjustment modes aiming at the number of P columns in the terminal area in the preparation process of the next super junction MOS terminal based on the difference value between the measured maximum current value and the preset critical current, and the adjustment amplitudes of the adjustment modes aiming at the number of P columns are different.
Further, the central control module is provided with a plurality of adjustment modes aiming at the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal based on the distance when the determination of the duty ratio of the number of the P columns in the terminal area in the preparation process of the next super junction MOS terminal is completed, and the adjustment modes are different in adjustment amplitude aiming at the depth of the P column.
Further, when the adjustment of the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal is completed, the central control module judges whether the adjustment of the depth of the P column of the terminal area meets a preset standard according to the critical depth, and when the adjustment of the depth is judged not to meet the preset standard, the central control module corrects corresponding parameters of the terminal area in the preparation process of the next super junction MOS terminal according to the determined depth to be adjusted, wherein the parameters comprise the width of the P column of the terminal area and the depths of all the P columns.
Further, the central control module selects a width adjustment coefficient a to correct the width of the P column of the terminal region to a corresponding value according to the determined depth to be adjusted, or corrects the depths of all the P columns in the preparation process of the next super junction MOS terminal to the corresponding value according to the determined difference value between the depth to be adjusted and the critical depth.
Further, the central control module is provided with a plurality of correction modes aiming at the depths of all the P columns in the preparation process of the next super junction MOS terminal based on the determined difference value between the depth to be adjusted and the critical depth, and the correction amplitudes of all the correction modes aiming at the P columns are different.
Compared with the prior art, the method has the beneficial effects that the central control module judges whether the super junction MOS terminal accords with the preset standard according to the distance between the point with the maximum current value and the preset point of the primitive cell area, so that the control precision of the breakdown position is improved, and whether the super junction MOS terminal accords with the preset standard is secondarily judged according to the measured maximum current value, or the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal is adjusted to the corresponding value according to the distance, the breakdown resistance of the super junction MOS terminal is improved, and the impact resistance of a device is improved while the breakdown resistance of the super junction MOS terminal is ensured.
Further, according to the invention, the central control module judges whether the super junction MOS terminal meets the preset standard according to the distance between the point position of the maximum current value and the preset point position of the primitive cell area, and adjusts the depth of the P column of the terminal area to a corresponding value according to the distance when the super junction MOS terminal is judged to be not in accordance with the preset standard in the preparation process of the next super junction MOS terminal, thereby improving the control precision of the depth of the P column of the terminal area, further improving the breakdown resistance of the super junction MOS terminal, ensuring the breakdown resistance of the super junction MOS terminal and further improving the impact resistance of devices.
Further, the central control module secondarily determines whether the super junction MOS terminal meets a preset standard according to the maximum current value, and judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal meets the preset standard according to the distance when the super junction MOS terminal is judged to be not in accordance with the preset standard, so that the accuracy of breakdown resistance of the analysis terminal is improved.
Further, the central control module judges whether the thickness of the upper region of the P column of the transition region meets a preset standard according to the ratio of the distance to the second preset distance, accuracy of breakdown resistance of the analysis terminal is further improved, and when the thickness is judged not to meet the preset standard, the thickness of the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal is adjusted to a corresponding value according to the maximum current value, so that the breakdown resistance of the super junction MOS terminal is further improved, and the impact resistance of a device is further improved while the breakdown resistance of the super junction MOS terminal is ensured.
Further, according to the invention, the central control module selects the corresponding thickness adjustment coefficient to adjust the thickness of the transition region to the corresponding value according to the measured difference value between the maximum current value and the preset maximum current value, so that the breakdown resistance of the super junction MOS terminal is further improved, and the impact resistance of the device is further improved while the breakdown resistance of the super junction MOS terminal is ensured.
Further, the central control module selects the corresponding adjustment coefficient according to the measured difference value between the maximum current value and the preset critical current to adjust the duty ratio of the number of the P columns in the terminal area to the corresponding value in the preparation process of the next super junction MOS terminal, so that the breakdown resistance of the super junction MOS terminal is further improved, the breakdown resistance of the super junction MOS terminal is ensured, and meanwhile, the impact resistance of the device is further improved.
Drawings
FIG. 1 is a flow chart of a method for preparing an avalanche breakdown resistant super junction MOS terminal in accordance with the present invention;
FIG. 2 is a flow chart for determining whether the super junction MOS terminal meets a preset standard;
fig. 3 is a flowchart of the present invention for secondarily determining whether the super junction MOS terminal meets a preset standard;
FIG. 4 is a flowchart for determining whether the thickness of the upper region of the P column in the transition region meets the preset standard.
Detailed Description
In order that the objects and advantages of the invention will become more apparent, the invention will be further described with reference to the following examples; it should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that, in the description of the present invention, terms such as "upper," "lower," "left," "right," "inner," "outer," and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the apparatus or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those skilled in the art according to the specific circumstances.
Fig. 1 is a flowchart of a method for preparing a super junction MOS terminal resistant to avalanche breakdown according to the present invention.
The preparation method of the super junction MOS terminal for resisting avalanche breakdown comprises the following steps:
step S1, a detection module detects the point position with the maximum current value in the preset point position of the super junction MOS terminal, calculates the distance between the point position and the preset point position of the primitive cell area, and a central control module judges whether the super junction MOS terminal accords with a preset standard according to the distance;
step S2, when the super junction MOS terminal is judged not to meet the preset standard, the central control module carries out secondary judgment on whether the super junction MOS terminal meets the preset standard according to the maximum current value measured by the detection module, or adjusts the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal to a corresponding value according to the distance;
step S3, the central control module judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal accords with a preset standard according to the distance when the super junction MOS terminal is judged to be not in accordance with the preset standard for the second time, and adjusts the thickness of the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal to a corresponding value according to the measured maximum current value when the thickness is judged to be not in accordance with the preset standard;
and S4, the central control module completes the adjustment of the preparation process of the super junction MOS terminal for resisting avalanche breakdown when completing the adjustment of corresponding parameters in the preparation process of the next super junction MOS terminal.
According to the invention, the central control module judges whether the super junction MOS terminal accords with a preset standard according to the distance between the point with the maximum current value and the preset point of the cell region, so that the control precision of breakdown position is improved, and whether the super junction MOS terminal accords with the preset standard is secondarily judged according to the measured maximum current value, or the depth of the P column of the terminal region in the preparation process of the next super junction MOS terminal is regulated to a corresponding value according to the distance, so that the breakdown resistance of the super junction MOS terminal is improved, and the impact resistance of a device is improved while the breakdown resistance of the super junction MOS terminal is ensured.
Fig. 2 is a flowchart for determining whether the super junction MOS terminal meets a preset standard according to the present invention.
Specifically, in step S1, the central control module determines, according to a distance between the point location of the maximum current value and the preset point location of the primitive cell area, whether the super junction MOS terminal meets a determination mode of a preset standard, where:
the first judging mode is that the central control module judges that the super junction MOS terminal accords with a preset standard; the first judging mode meets the condition that the distance is smaller than or equal to a first preset distance;
the second judging mode is that the central control module judges whether the super junction MOS terminal accords with a preset standard or not according to the maximum current value measured by the detection module; the second judging mode meets the condition that the distance is larger than the first preset distance and smaller than or equal to a second preset distance;
the third judging mode is that the central control module judges that the super junction MOS terminal does not accord with a preset standard, and the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal is adjusted to a corresponding value according to the distance; the third determination mode satisfies that the distance is greater than the second preset distance.
According to the invention, the central control module judges whether the super junction MOS terminal meets the preset standard according to the distance between the point position of the maximum current value and the preset point position of the primitive cell area, and adjusts the depth of the P column of the terminal area to the corresponding value according to the distance when the super junction MOS terminal is judged to be not in accordance with the preset standard in the preparation process of the next super junction MOS terminal, thereby improving the control precision of the depth of the P column of the terminal area, further improving the breakdown resistance of the super junction MOS terminal, ensuring the breakdown resistance of the super junction MOS terminal and further improving the impact resistance of devices.
Fig. 3 is a flowchart for secondarily determining whether the super junction MOS terminal meets a preset standard according to the present invention.
Specifically, the central control module determines, according to the maximum current value, a secondary decision mode for whether the super junction MOS terminal meets a preset standard in the second decision mode, where:
the first secondary judgment mode is that the central control module judges that the super junction MOS terminal accords with a preset standard; the first secondary judgment mode meets the condition that the maximum current value is smaller than or equal to a preset maximum current value;
the second secondary judgment mode is that the central control module judges that the super junction MOS terminal does not meet a preset standard, and judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal meets the preset standard according to the distance; the second secondary decision means satisfies that the maximum current value is greater than the preset maximum current value.
According to the invention, the central control module secondarily determines whether the super junction MOS terminal meets the preset standard according to the maximum current value, and judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal meets the preset standard according to the distance when the super junction MOS terminal is judged to be not in accordance with the preset standard, thereby improving the accuracy of breakdown resistance of the analysis terminal.
Referring to fig. 4, a flowchart of the present invention is directed to determining whether the thickness of the upper region of the P-pillar of the transition region meets a predetermined criterion.
Specifically, the central control module determines, in the second secondary determination manner, whether the thickness of the P pillar upper region of the transition region meets a thickness determination manner of a preset standard according to a ratio of the distance to the second preset distance, where:
the first thickness judgment mode is that the central control module judges that the thickness accords with a preset standard, and judges that the super junction MOS terminal accords with the preset standard; the first thickness judgment mode meets the condition that the ratio is smaller than or equal to a preset ratio;
the second thickness determination mode is that the central control module determines that the thickness does not meet a preset standard, and adjusts the thickness of the upper region of the P column of the transition region to a corresponding value in the preparation process of the next super junction MOS terminal according to the maximum current value; the second thickness determination means satisfies that the ratio is greater than the preset ratio.
According to the invention, the central control module judges whether the thickness of the upper region of the P column of the transition region meets the preset standard according to the ratio of the distance to the second preset distance, so that the accuracy of the breakdown resistance of the analysis terminal is further improved, and when the thickness is judged not to meet the preset standard, the thickness of the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal is regulated to the corresponding value according to the maximum current value, so that the breakdown resistance of the super junction MOS terminal is further improved, and the impact resistance of a device is further improved while the breakdown resistance of the super junction MOS terminal is ensured.
Specifically, the central control module marks the difference value between the measured maximum current value and the preset maximum current value as a current difference value in the second thickness determination mode, and determines a thickness adjustment mode for the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal according to the current difference value, wherein:
the first thickness adjusting mode is that the central control module selects a first thickness adjusting coefficient alpha 1 to adjust the thickness of the transition zone to a corresponding value; the first thickness adjusting mode meets the condition that the current difference value is larger than or equal to a preset current difference value;
the second thickness adjusting mode is that the central control module selects a second thickness adjusting coefficient alpha 2 to adjust the thickness of the transition zone to a corresponding value; the second thickness adjustment mode satisfies that the current difference value is smaller than the preset current difference value.
According to the invention, the central control module selects the corresponding thickness adjustment coefficient according to the measured difference value between the maximum current value and the preset maximum current value to adjust the thickness of the transition region to the corresponding value, so that the breakdown resistance of the super junction MOS terminal is further improved, the breakdown resistance of the super junction MOS terminal is ensured, and the impact resistance of the device is further improved.
Specifically, the central control module marks the difference between the measured maximum current value and the preset critical current as a first-level difference value in the third determination mode, and determines a duty ratio determination mode for adjusting the number of P columns in the terminal area in the preparation process of the next super junction MOS terminal according to the first-level difference value, wherein:
the first duty ratio determining mode is that the central control module selects a first duty ratio adjusting coefficient beta 1 to adjust the duty ratio of the number of P columns in the terminal area to a corresponding value in the preparation process of the next super junction MOS terminal; the first duty ratio determining mode meets the condition that the first-level difference value is larger than or equal to a preset first-level difference value;
the second duty ratio determining mode is that the central control module selects a second duty ratio adjusting coefficient beta 2 to adjust the duty ratio of the number of P columns in the terminal area to a corresponding value in the preparation process of the next super junction MOS terminal; the second duty ratio determining mode meets the condition that the first-order difference value is smaller than the preset first-order difference value.
According to the invention, the central control module selects the corresponding adjusting coefficient according to the measured difference value between the maximum current value and the preset critical current, and adjusts the ratio of the number of P columns in the terminal area to the corresponding value in the preparation process of the next super junction MOS terminal, so that the breakdown resistance of the super junction MOS terminal is further improved, and the impact resistance of the device is further improved while the breakdown resistance of the super junction MOS terminal is ensured.
Specifically, the central control module marks the difference between the distance and the second preset distance as a second-level difference under a first preset condition, and determines a depth adjustment mode of the P column of the terminal area in the preparation process of the next super junction MOS terminal according to the second-level difference, wherein:
the first depth adjustment mode is that the central control module selects a first depth adjustment coefficient gamma 1 to adjust the depth of the P column of the terminal area to a corresponding value in the preparation process of the next super junction MOS terminal; the first depth adjustment mode meets the condition that the secondary difference value is larger than or equal to a preset secondary difference value;
a second depth adjustment mode is that the central control module selects a second depth adjustment coefficient gamma 2 to adjust the depth of the P column of the terminal area to a corresponding value in the preparation process of the next super junction MOS terminal; the second depth adjustment mode meets the condition that the secondary difference value is smaller than the preset secondary difference value;
and the first preset condition is that the central control module finishes determining and adjusting the duty ratio of the number of the P columns in the terminal area in the preparation process of the next super junction MOS terminal.
Specifically, the central control module compares the determined depth to be adjusted with the critical depth under a second preset condition, and determines whether the adjustment of the depth of the P column of the terminal area meets the determination mode of a preset standard according to the comparison result, wherein:
the first determination mode is that the central control module judges that the adjustment of the depth of the P column aiming at the terminal area meets a preset standard; the first determination mode meets the requirement that the determined depth to be adjusted is smaller than or equal to the critical depth;
the second determining mode is that the central control module determines that the adjustment of the depth of the P column of the terminal area does not meet a preset standard, and corrects the terminal area according to the determined depth to be adjusted; the second determination mode satisfies that the determined depth to be adjusted is larger than the critical depth;
and the second preset condition is that the central control module completes the determination of the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal.
Specifically, the central control module marks the determined difference between the depth to be adjusted and the critical depth as a three-level difference under the second determination mode, and determines a correction mode of the P column for the terminal area according to the three-level difference, wherein:
the first correction mode is that the central control module selects a width adjustment coefficient a to correct the width of the P column of the terminal area to a corresponding value; the first correction mode meets the condition that the three-level difference value is smaller than or equal to a preset three-level difference value;
the second correction mode is that the central control module judges that the depths of all P columns in the preparation process of the MOS terminal aiming at the next super junction are corrected to corresponding values according to the three-level difference value; the second correction mode satisfies that the three-level difference is larger than the preset three-level difference.
Specifically, the central control module marks the difference between the three-level difference and the preset three-level difference as a four-level difference in the second correction mode, and determines the depth correction mode for all the P columns in the preparation process of the next super junction MOS terminal according to the four-level difference, wherein:
the first depth correction mode is that the central control module selects a first depth correction coefficient b1 to correct the depths of all P columns to corresponding values in the preparation process of the next super junction MOS terminal; the first depth correction mode meets the condition that the fourth-level difference value is larger than or equal to a preset fourth-level difference value;
the second depth correction mode is that the central control module selects a second depth correction coefficient b2 to correct the depths of all P columns to corresponding values in the preparation process of the next super junction MOS terminal; the second depth correction mode satisfies that the fourth-order difference value is smaller than the preset fourth-order difference value.
In the embodiment of the present invention, the first depth correction coefficient b1 is 1.03, and the second depth correction coefficient b2 is 1.01.
Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will be within the scope of the present invention.
The foregoing description is only of the preferred embodiments of the invention and is not intended to limit the invention; various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The preparation method of the super junction MOS terminal resistant to avalanche breakdown is characterized by comprising the following steps of:
the detection module detects the point with the maximum current value in the preset point of the super junction MOS terminal, calculates the distance between the point and the preset point of the primitive cell area, and the central control module judges whether the super junction MOS terminal accords with the preset standard according to the distance;
this determination includes three cases:
when the distance is smaller than or equal to a first preset distance, the central control module judges that the super junction MOS terminal accords with a preset standard;
when the distance is larger than the first preset distance and smaller than or equal to the second preset distance, the central control module judges whether the super junction MOS terminal accords with a preset standard or not according to the maximum current value measured by the detection module;
when the distance is larger than the second preset distance, the central control module judges that the super junction MOS terminal does not meet a preset standard, and adjusts the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal to a corresponding value according to the distance;
wherein, the secondary judgment includes:
when the maximum current value is smaller than or equal to a preset maximum current value, the central control module judges that the super junction MOS terminal meets a preset standard;
when the maximum current value is larger than the preset maximum current value, the central control module judges that the super junction MOS terminal does not meet a preset standard, and judges whether the thickness of the upper region of the P column of the transition region of the super junction MOS terminal meets the preset standard according to the distance;
the central control module judges that the super junction MOS terminal meets a preset standard when judging that the thickness meets the preset standard; when the thickness is not in accordance with the preset standard, the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal is aimed at according to the maximum current value
The thickness of the domain is adjusted to a corresponding value.
2. The method for preparing the super junction MOS terminal resistant to avalanche breakdown according to claim 1, wherein the central control module is provided with a plurality of thickness adjustment modes aiming at the upper region of the P column of the transition region in the preparation process of the next super junction MOS terminal based on the difference value between the measured maximum current value and a preset maximum current value, and the adjustment amplitudes of the adjustment modes aiming at the thickness of the upper region of the P column are different.
3. The method for preparing the super junction MOS terminal resistant to avalanche breakdown according to claim 2, wherein the central control module is provided with a plurality of adjustment modes for adjusting the duty ratio of the number of P-pillars in the terminal area in the preparation process of the next super junction MOS terminal based on the difference value between the measured maximum current value and the preset critical current when the super junction MOS terminal is judged not to meet the preset standard, and the adjustment amplitudes of the adjustment modes for the duty ratio of the number of P-pillars are different.
4. The method for preparing the super junction MOS terminal resistant to avalanche breakdown according to claim 3, wherein the central control module is provided with a plurality of adjustment modes aiming at the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal based on the distance when determining and adjusting the ratio of the number of the P columns in the terminal area in the preparation process of the next super junction MOS terminal, and the adjustment amplitudes of the adjustment modes aiming at the depth of the P column are different.
5. The method for preparing the super junction MOS terminal resistant to avalanche breakdown according to claim 4, wherein the central control module determines whether the adjustment of the depth of the P column of the terminal area meets a preset standard according to the critical depth when the adjustment of the depth of the P column of the terminal area in the preparation process of the next super junction MOS terminal is completed, and corrects the corresponding parameters of the terminal area in the preparation process of the next super junction MOS terminal according to the determined depth to be adjusted when the adjustment of the depth is not met the preset standard, wherein the parameters comprise the width of the P column of the terminal area and the depths of all the P columns.
6. The method for preparing the super junction MOS terminal resistant to avalanche breakdown according to claim 5, wherein the central control module selects a width adjustment coefficient a to correct the width of the P column of the terminal area to a corresponding value according to the determined depth to be adjusted, or corrects the depths of all the P columns in the preparation process of the next super junction MOS terminal to the corresponding value according to the determined difference between the depth to be adjusted and the critical depth.
7. The method for preparing the super junction MOS terminal resistant to avalanche breakdown according to claim 6, wherein the central control module is provided with a plurality of correction modes aiming at the depths of all P columns in the preparation process of the next super junction MOS terminal based on the determined difference value between the depth to be regulated and the critical depth, and the correction amplitudes of the correction modes aiming at the P columns are different.
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| WO2021189838A1 (en) * | 2020-03-24 | 2021-09-30 | 清华大学 | Buffer region variable doping structure used for overvoltage breakdown function, and semiconductor device |
| WO2023285133A1 (en) * | 2021-07-16 | 2023-01-19 | Rise Research Institutes of Sweden AB | Junction termination structure |
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| KR101932776B1 (en) * | 2013-09-17 | 2018-12-27 | 매그나칩 반도체 유한회사 | Super-junction semiconductor device |
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| CN101461065A (en) * | 2006-03-31 | 2009-06-17 | 飞兆半导体公司 | Power device with improved edge termination |
| CN103996702A (en) * | 2014-05-26 | 2014-08-20 | 电子科技大学 | Terminal structure for improving avalanche tolerance of super junction power device |
| CN104103522A (en) * | 2014-07-14 | 2014-10-15 | 电子科技大学 | Method for manufacturing high withstand voltage super junction terminal structure |
| WO2021189838A1 (en) * | 2020-03-24 | 2021-09-30 | 清华大学 | Buffer region variable doping structure used for overvoltage breakdown function, and semiconductor device |
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