CN117153723B - Wet etching device for avoiding top Mo indentation - Google Patents

Wet etching device for avoiding top Mo indentation Download PDF

Info

Publication number
CN117153723B
CN117153723B CN202311113227.2A CN202311113227A CN117153723B CN 117153723 B CN117153723 B CN 117153723B CN 202311113227 A CN202311113227 A CN 202311113227A CN 117153723 B CN117153723 B CN 117153723B
Authority
CN
China
Prior art keywords
air
magnet
etching
buffer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202311113227.2A
Other languages
Chinese (zh)
Other versions
CN117153723A (en
Inventor
刘丹
方亮
黄中浩
陈国良
管飞
宋群梁
陈渝
吴芳
张淑芳
刘高斌
罗旭
熊永
吴旭
林鸿涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing University
Original Assignee
Chongqing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing University filed Critical Chongqing University
Priority to CN202311113227.2A priority Critical patent/CN117153723B/en
Publication of CN117153723A publication Critical patent/CN117153723A/en
Application granted granted Critical
Publication of CN117153723B publication Critical patent/CN117153723B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065—After-treatment
    • B05D3/067—Curing or cross-linking the coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)

Abstract

The invention discloses a wet etching device for avoiding top Mo indentation; the wet etching device is sequentially provided with a dry section, an etching section, a buffer section, a water washing section and an air drying section according to the transmission direction of the substrate; the wet etching device further comprises a vortex tube, a hot air port and a first air outlet are further arranged in the buffer zone, the shape of the buffer air knife is set to be arc-shaped, a hot air pipe is arranged above the buffer air knife in an inclined mode, a nozzle of the hot air pipe is opposite to the buffer air knife, and a hot air branch pipe of the vortex tube is respectively communicated with the hot air port and the hot air pipe; the wet etching device also comprises a cooling device, and a cold air branch pipe of the vortex tube is communicated with the cooling device. The invention can effectively avoid the top Mo indentation problem in the Mo/Al and Mo/Al/Mo etching process, avoid the quality problems such as stain display and the like, and ensure the product quality and yield.

Description

Wet etching device for avoiding top Mo indentation
Technical Field
The invention relates to the technical field of microelectronic processing, in particular to a wet etching device for avoiding top Mo indentation.
Background
The thin film transistor liquid crystal display (TFT-LCD) is composed of a backlight source and a display screen, wherein the display screen is composed of an upper polarizer, a lower polarizer, an Array substrate, a color film and liquid crystal. The structure and display principle of the TFT-LCD are as shown in fig. 1 (a), and the backlight emits light to reach the Array substrate through the lower polarizer. The TFT devices on the Array substrate are turned on and generate an electric field, which drives the liquid crystal to deflect, and light is transmitted through the liquid crystal cell and irradiated onto the color film. The color film array consists of red (R), green (G) and blue (B) sub-pixels, emits R, G, B monochromatic light after irradiating the sub-pixels, and the monochromatic light reaches human eyes through the upper polaroid, and finally color display is realized by superposition of the monochromatic light. In TFT-LCD, the Array substrate is the most technically difficult and complex component. As shown in fig. 1 (b), the TFT device structure on the Array substrate is formed by sequentially performing processes of Gate (Gate), gate insulating layer film formation, active layer (a-Si), pixel electrode (1 ITO), source Drain (SD), passivation layer (PVX, siNx material), and common electrode (2 ITO) on the glass substrate. The Gate, gate insulating layer, a-Si and SD electrodes form a transistor device, the Drain electrode (Drain, abbreviated as D electrode) of the device is connected to the pixel electrode (1 ITO), and the electrical signal of the device is thus transmitted to the pixel electrode (1 ITO). PVX covers the device and plays a role in protection. The common electrode (2 ITO) acts as a reference potential, and the potential difference between the pixel electrode (1 ITO) and the common electrode (2 ITO) drives the liquid crystal to deflect. The Gate and SD electrode materials are typically Al, and are patterned by wet etching with PAN etching solution (H 3PO4、CH3COOH、HNO3) after photolithography. As shown in FIG. 1 (c), the Gate electrode is usually a Mo/Al/Mo or Al/Mo film, and the SD electrode is a Mo/Al/Mo film.
The wet etching equipment and process are shown in fig. 2, the glass substrate I enters the etching equipment from a dry zone II, and the glass substrate I sequentially passes through an etching zone III, a buffer zone IV, a washing zone V and a drying zone VI under the transportation of a transmission shaft 1, so that the whole etching process is completed. The lower part of the etching section II is connected with a liquid medicine tank 3 through a return pipe 2. Etching liquid is contained in the liquid medicine tank 3, flows to an etching interval through a pipeline 5 under the action of a pump 4, and is finally sprayed out from a first spray pipe 6; the sprayed etching liquid contacts with the Al film layer on the glass substrate to generate chemical reaction, thus realizing wet etching. The etching liquid with chemical reaction flows back to the liquid medicine tank through the return pipe 2 to form circulating flow. And the inlet and the outlet of the etching section are respectively provided with a sealing door 7 and 8, and the sealing doors are in a closed state for a long time, so that the overflow of etching steam is avoided. When the glass substrate is transmitted from the dry zone to the etching zone, the inlet sealing door 7 is opened, and after the substrate enters the etching zone, the inlet sealing door is closed immediately; when the glass substrate is transferred from the etching zone to the buffer zone, the outlet sealing door 8 is opened, and after the substrate completely leaves the etching zone, the outlet sealing door is closed.
The PAN-type etching liquid consists of H 3PO4、CH3COOH、HNO3, and the etching liquid remains on the glass substrate and is carried to the water washing area, which causes the consumption loss of the etching liquid. In order to reduce the loss of etching liquid, first air curtain air knives 9 and 10 are arranged at the outlet positions of etching intervals; the first air curtain air knives 9 and 10 blow air along the vertical direction to form an air curtain, and the air curtain plays a role of a scraper to reduce the carrying-out amount of etching liquid on the substrate. The substrate is then transported to a buffer zone III, a buffer air knife 11 is arranged in the buffer zone, an included angle exists between the blowing direction of the buffer air knife and the vertical direction, and the blowing direction is decomposed into a vertical downward direction and a horizontal direction; the blowing in the vertical direction and the air curtain air knife have the same effect, and the horizontal blowing direction is opposite to the substrate conveying direction. The etching liquid intercepted by the buffer air knife 11 flows into the liquid medicine tank 3 through the return pipe.
The glass substrate is immediately transferred into a washing section V, the inlets of the washing section are provided with second air curtain air knives 12 and 13, and the second air curtain air knives 12 and 13 blow air in the vertical direction to form an air curtain, so that etching steam in the buffer section IV is prevented from entering the washing section. The water knife 14 is arranged at the rear end of the water washing section, the water knife forms an included angle with the vertical direction to spray out a waterfall-shaped continuous water curtain, the spraying direction of the water curtain is decomposed into the vertical direction and the horizontal direction, the component of the horizontal direction is the same as the conveying direction of the substrate, and the water curtain dilutes the etching liquid remained on the substrate and promotes the flow of the residual etching liquid. Then the substrate continues to be transported, the second spray pipe 15 sprays high-speed mist water flow to clean the substrate, and the residual etching liquid is washed clean. After the water washing is finished, the substrate is transmitted to an air-drying interval VI, the substrate is air-dried in the interval, and finally the wet etching process is finished.
However, for wet etching of Mo/Al/Mo, al/Mo electrodes, top Mo recession is common. As shown in fig. 3a, the top Mo shrinks inward, resulting in the Al film layer being exposed. The reflectivity of Al and Mo metals are different, as shown in fig. 3b, the reflectivity of Al film is higher than Mo. Finally, under the condition of screen display, the difference of the reflectivity of Mo and Al can be distinguished by human eyes, and the difference is reflected as the brightness difference of a display screen, and the TFT industry is called as display stain. The display stain can cause the product yield to be lost or even scrapped, waste materials and manpower, and increase the production cost.
The reason for retracting the top Mo is mainly that HNO 3 in etching liquid volatilizes, condenses and drips, and a water knife is sprayed to form H 3PO4 solution heat to cause local etching acceleration. Al etching process, in order to ensure stable etching rate, the etching solution is heated to 40 ℃. Although the inlets of the etching zone, the buffer zone and the water washing zone are all provided with air knives for reducing etching liquid residues, the PAN etching liquid has high viscosity and the etching liquid residue is still large. The more HNO 3 is volatilized in the remaining etching liquid, the more HNO 3 is contained in the etching liquid, so that the more HNO 3 is volatilized. As shown in fig. 4a, the substrate is transferred to the buffer area iv, the temperature of the etching solution remained on the substrate is 40 ℃, and HNO 3 in the etching solution volatilizes to the inner wall of the chamber and condenses into small droplets. As the number of the flow sheets increases, the concentration of HNO 3 vapor in the buffer zone is larger, and liquid drops condensed on the inner wall of the chamber are gradually converged into large liquid drops; the large liquid drops rich in HNO 3 drop onto the substrate under the action of gravity, so that the concentration of HNO 3 at the local position of the substrate is higher, and the etching at the position is accelerated; and Mo has a higher etch rate than Al, which causes the top Mo to retract. In addition, as shown in fig. 4b, the buffer air knife 11 in the buffer zone continuously blows air, and the air pressure at the position is reduced; this causes HNO 3 vapor to migrate toward the buffer blade and condense on the buffer blade 11 to form droplets of enriched HNO 3 which drop under gravity onto the substrate, again causing Mo to retract.
In addition, when the substrate is transferred to the washing section V, as shown in fig. 5a, the water knife 14 sprays out a waterfall-shaped water curtain to dilute the residual etching liquid, and the etching liquid contains concentrated H 3PO4; the concentrated H 3PO4 releases the heat of solution during dilution with water, which is absorbed by the sprayed water curtain; however, the residual amounts of the etching liquid at different positions on the substrate are different, the solution heat at the places with more residues is large, the partial temperature is still increased due to insufficient heat absorption of the water curtain, the etching effect of the residual etching liquid is promoted, and finally Mo indentation is formed. Residual etching liquid HNO 3 still volatilizes in the water washing interval V, and the process is accompanied with the volatilization of water vapor. As shown in fig. 5b and 5c, HNO 3 and water vapor eventually condense on the inner wall of the water washing section to form droplets rich in HNO 3; because of the enrichment effect of HNO 3 volatilization, the HNO 3 content in the liquid drop is higher than that of the original etching liquid; the droplets drop to the substrate under gravity and also cause Mo to retract.
The existing wet etching equipment for mass production cannot effectively avoid the problem of top Mo indentation in Mo/Al/Mo and Al/Mo etching processes, and yield loss and quality risk caused by top Mo indentation exist for a long time. A wet etching device capable of avoiding the top Mo indentation is urgently needed in a TFT production line.
Disclosure of Invention
Accordingly, the present invention is directed to a wet etching apparatus for avoiding top Mo recession, which can effectively avoid the top Mo recession problem in Mo/Al and Mo/Al/Mo etching processes, avoid the quality problems such as stain display, and ensure the product quality and yield.
In order to achieve the above purpose, the present invention provides the following technical solutions:
The wet etching device for avoiding the top Mo retraction is sequentially provided with a dry section, an etching section, a buffer section, a washing section and an air drying section according to the transmission direction of the substrate;
The dry region is communicated with the etching region through a sealing door;
A first spray pipe for spraying etching liquid to the surface of the substrate is arranged in the etching zone, the etching zone is communicated with the buffer zone through a sealing door, a first air curtain air knife is arranged at the outlet of the etching zone, and the first air curtain air knife is used for blowing air to the surface of the substrate along the vertical direction to intercept the etching liquid on the substrate;
A buffer air knife is arranged in the buffer zone and is used for blowing air to the surface of the substrate along the oblique rear direction to intercept etching liquid on the substrate;
The inlet of the washing section is provided with a second air curtain air knife which is used for blowing air along the vertical direction to form an air curtain, etching steam in the buffer section is prevented from entering the washing section, the rear end of the washing section is provided with a water knife which is used for spraying the water curtain along the oblique front direction to dilute etching liquid remained on the substrate, and a second spray pipe which is used for spraying water to the surface of the substrate is arranged in the washing section;
a first magnet device is arranged in the etching interval and is arranged at the rear end of the first air curtain air knife for reducing the viscosity of etching liquid on the substrate; a second magnet device is arranged in the buffer zone and is arranged at the rear end of the buffer air knife for reducing the viscosity of etching liquid on the substrate;
The wet etching device further comprises a vortex tube, a hot air port and a first air outlet are arranged in the buffer zone, the buffer air knife is arc-shaped in shape, a hot air pipe is arranged obliquely above the buffer air knife, a nozzle of the hot air pipe is opposite to the buffer air knife, and a hot air branch pipe of the vortex tube is respectively communicated with the hot air port and the hot air pipe;
The wet etching device further comprises a cooling device, a cold air branch pipe of the vortex tube is communicated with the cooling device, the cooling device is further connected with a normal-temperature water pipe, and a supercooled water pipe of the cooling device is communicated with a water knife in a water washing section;
the top of the inner wall of the chamber in the washing section is a symmetrical slope, a PVC plate is arranged on the slope, the surface of the PVC plate is coated with a TiO 2 super-hydrophilic coating, and an ultraviolet irradiation system for emitting ultraviolet light to the TiO 2 super-hydrophilic coating is further arranged in the washing section.
As the preferable technical scheme, the hot air port and the first air outlet are both positioned at the top of the buffer zone, the hot air port is close to the etching zone, and the first air outlet is close to the washing zone.
As the preferable technical scheme, a compressed air supply port and a second air exhaust port are arranged in the water washing section, the compressed air supply port and the air exhaust port are arranged on the same side wall, the compressed air supply port is close to the buffer section, and the second air exhaust port is close to the air drying section.
As the preferable technical scheme, the first magnet device comprises a magnet groove, a top cover plate and a U-shaped magnet, wherein the U-shaped magnet is arranged in the magnet groove, plastic is filled in the magnet groove to fix the U-shaped magnet, and the cross section of the top cover plate is triangular.
As a preferred technical scheme, the second magnet device comprises an upper magnet and a lower magnet, wherein the upper magnet and the lower magnet are composed of a magnet groove, a strip magnet embedded in the magnet groove and a top cover plate, the strip direction of the strip magnet is parallel to the substrate transmission direction, and the south pole and the north pole of the upper magnet and the north pole of the lower magnet are opposite.
As the preferable technical scheme, the ultraviolet irradiation system comprises an indoor photovoltaic module, a super capacitor and an ultraviolet LED lamp, wherein the indoor photovoltaic module, the super capacitor and the ultraviolet LED lamp are connected with a PLC through a relay to form a control circuit capable of being automatically adjusted and switched.
As the preferable technical scheme, the shell of the cooling device is conical, the upper part of the shell is small, the lower part of the shell is large, the cold air branch pipe of the vortex tube is communicated with the bottom of the cooling device, the normal-temperature water pipe is communicated with the top of the cooling device, the pipe diameter of the supercooling water pipe of the cooling device is 0.5-0.7 times of the pipe diameter of the normal-temperature water pipe, and the supercooling water temperature is controlled to be 5-12 ℃.
The invention has the beneficial effects that:
1. according to the invention, special magnet devices are arranged in the etching zone and the buffer zone, the viscosity of etching liquid is reduced by the magnetic field of the magnet, the residual quantity of the etching liquid is reduced under the action of the air knife, the volatilization quantity of HNO 3 is reduced from the source, and the condensation of HNO 3 vapor is inhibited.
2. The hot gas separated by the vortex tube is fed into a buffer zone to dilute HNO 3 vapor, reduce the concentration of HNO 3 gas and inhibit condensation; simultaneously, the hot gas heats the chamber in the interval, so that HNO 3 vapor is prevented from condensing and dripping on the inner wall of the chamber.
3. The hot gas blows and drenches the arc buffering air knife, and hot gas can heat the whole outer wall of the buffering air knife through the wall attaching effect, so that condensation and dripping of HNO 3 vapor on the outer wall of the buffering air knife are effectively avoided.
4. Cold gas separated by the vortex tube enters a cooling device to cool normal-temperature water to form supercooled water, and the supercooled water sprays the substrate through a water knife, so that the dissolution heat of H 3PO4 in the water washing process can be fully absorbed, and the top Mo retraction caused by local temperature rise is avoided.
5. The compressed air inlet and the air outlet are arranged in the water washing section, the compressed air has a dilution effect, the concentration of HNO 3 and the concentration of water vapor are reduced, the mixed gas is pumped away, the inner wall of a chamber in the water washing section is restrained from forming liquid drops, and the drop dropping risk of the liquid drops is reduced.
6. The ultraviolet irradiation system and the slope-shaped TiO 2 super-hydrophilic coating are further arranged in the water washing section, even if part of HNO 3 vapor and water vapor volatilize to the inner wall of the cavity, the vapor can not form liquid drops to drop, and the risk of Mo indentation is avoided.
7. The ultraviolet irradiation system adopts the indoor photovoltaic module function, does not need extra electric energy, and is beneficial to cost control. And this lighting system and photovoltaic module, ultracapacitor system, relay pass through PLC and connect, automatic realization function need not extra manpower and corresponds.
By comprehensively utilizing the technical means, the invention effectively avoids the problem of top Mo indentation in the Mo/Al and Mo/Al/Mo etching processes, avoids the quality problems of stain display and the like, and ensures the product quality and yield.
Drawings
In order to make the objects, technical solutions and advantageous effects of the present invention more clear, the present invention provides the following drawings for description:
FIG. 1 is a schematic diagram of a TFT-LCD structure and a TFT device;
FIG. 2 is a schematic diagram of a conventional wet etching apparatus;
FIG. 3 is a top Mo indentation morphology, film reflectivity, and showing stain formation mechanism;
FIG. 4 is a schematic diagram of the evaporation and condensation dropping process of HNO 3 vapor in the buffer zone;
FIG. 5 is a schematic diagram of the heat of solution, HNO 3 vapor volatilization and condensation drip process in the water wash zone H 3PO4;
FIG. 6 is a schematic diagram of a wet etching apparatus for avoiding top Mo recessing according to the present invention;
fig. 7 is a schematic view of the structure and principle of the first magnet device;
fig. 8 is a schematic view of the structure and principle of the second magnet device;
FIG. 9 is a schematic view of the structure and principle of an arc-shaped buffer air knife and a hot air pipe;
FIG. 10 is a schematic view of the structure and principle of a cooling device;
FIG. 11 is a schematic view of the top structure of the inner wall of the chamber in the washing section;
fig. 12 is a control circuit diagram of the ultraviolet irradiation system in the water washing section.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to limit the invention, so that those skilled in the art may better understand the invention and practice it.
The front refers to the downstream direction of substrate transport, and the rear refers to the upstream direction of substrate transport.
As shown in fig. 6, a wet etching device for avoiding top Mo retraction is provided with a dry section ii, an etching section iii, a buffer section iv, a water washing section v and an air drying section vi in sequence according to the transmission direction of a substrate.
The dry zone II is communicated with the etching zone III through a sealing door 7; a first spray pipe 6 for spraying etching liquid to the surface of the substrate I is arranged in the etching section III, the etching section III is communicated with the buffer section IV through a sealing door 8, first air curtain air knives 9 and 10 are arranged at the outlet of the etching section III, and the first air curtain air knives 9 and 10 are used for blowing air to the surface of the substrate along the vertical direction to intercept the etching liquid on the substrate; a buffer air knife 11 is arranged in the buffer zone IV, and the buffer air knife 11 is used for blowing air to the surface of the substrate along the oblique rear direction to intercept etching liquid on the substrate; the entrance of washing interval V is equipped with second air curtain air knife 12, 13, second air curtain air knife 12, 13 are used for blowing along vertical direction and form the air curtain, prevent that the etching steam of buffering interval IV from getting into washing interval V, washing interval V rear end is equipped with water sword 14, water sword 14 is used for along the preceding direction of inclining spraying water curtain dilution residual etching solution on the base plate, be equipped with the second shower 15 that is used for spraying water to the base plate surface in the washing interval V.
A first magnet device 16 is further arranged in the etching section III, and the first magnet device 16 is arranged at the rear ends of the first air curtain air knives 9 and 10 and used for reducing the viscosity of etching liquid on the substrate; the buffer zone IV is also internally provided with a second magnet device 17, and the second magnet device 17 is arranged at the rear end of the buffer air knife 11 and used for reducing the viscosity of etching liquid on the substrate. The magnetic fields of the first magnet device 16 and the second magnet device 17 reduce the viscosity of the etching liquid, the residual quantity of the etching liquid is reduced under the action of the air knife, the volatilization quantity of HNO 3 is reduced from the source, and the condensation of HNO 3 vapor is inhibited.
As shown in fig. 7, the first magnet device 16 includes a magnet groove 161, a top cover plate 162 and a U-shaped magnet 163, the U-shaped magnet 163 is disposed in the magnet groove 161, the magnet groove 161 is filled with plastic to fix the U-shaped magnet 163, and the top cover plate 162 has a triangular cross section. As shown in fig. 7 (c), the first magnet device 16 has a function that the magnetic induction line emitted from the north pole of the magnet returns to the south pole, the etching liquid on the substrate is subjected to the action of the magnetic field, the viscosity of the etching liquid is reduced, and the residual etching liquid is reduced under the action of the first air curtain air knives 9 and 10. The magnet groove 161 is made of stainless steel with a surface covered with resin, the stainless steel ensures the supporting strength, and the surface covered resin is acid-resistant and plays a role in protection; the top cover plate 162 is made of acid-resistant PVC material, the cross section of the top cover plate is triangular, etching liquid can flow conveniently, and rubber is covered on the periphery of the top cover plate; the surface of the U-shaped magnet 163 is covered with resin or rubber to protect the magnet.
As shown in fig. 8, the second magnet device 17 includes an upper magnet 171 and a lower magnet 172, each of the upper magnet 171 and the lower magnet 172 is composed of a magnet groove 173, a bar magnet 174 embedded in the magnet groove 173, and a top cover plate 175, the bar direction of the bar magnet 174 is parallel to the substrate conveying direction, and the south pole and the north pole directions of the upper magnet 171 and the lower magnet 172 are opposite. The upper magnet 171 and the lower magnet 172 have opposite north and south poles, and form two magnetic fields with opposite directions in the vertical direction. The viscosity of the residual etching liquid is further reduced under the action of the magnetic fields of the upper and lower magnet devices.
The wet etching device further comprises a vortex tube 18, a hot air port 19 and a first air outlet 20 are further arranged in the buffer zone IV, the hot air port 19 and the first air outlet 20 are both positioned at the top of the buffer zone IV, the hot air port 19 is close to the etching zone IV, and the first air outlet 20 is close to the washing zone V; the shape of the buffer air knife 11 is arc-shaped, a hot air pipe 21 is arranged above the buffer air knife 11 in an inclined mode, a nozzle of the hot air pipe 21 is opposite to the buffer air knife 11, and a hot air branch pipe 181 of the vortex tube 18 is respectively communicated with the hot air port 19 and the hot air pipe 21. The hot gas separated by the vortex tube 18 is fed into a buffer zone IV to dilute HNO 3 vapor, reduce the concentration of HNO 3 gas and inhibit condensation; simultaneously, the hot gas heats the chamber in the interval, so that HNO 3 vapor is prevented from condensing and dripping on the inner wall of the chamber. In addition, the hot gas blows and drenches the arc-shaped buffer air knife 11, and the hot gas can heat the outer wall of the whole buffer air knife 11 through the coanda effect (as shown in fig. 9), so that condensation and dripping of HNO 3 vapor on the outer wall of the buffer air knife are effectively avoided.
The wet etching device further comprises a cooling device 22, a cold air branch pipe 182 of the vortex tube 18 is communicated with the cooling device 22, the cooling device 22 is further connected with a normal-temperature water pipe 23, and a supercooling water pipe 24 of the cooling device 22 is communicated with the water knife 14 in the water washing section V. Cold gas separated by the vortex tube 18 enters the cooling device 22 to cool normal-temperature water to form supercooled water, and the supercooled water is sprayed on the substrate through the water knife 14, so that the dissolution heat of H 3PO4 in the water washing process can be fully absorbed, and the top Mo retraction caused by local temperature rise is avoided.
As shown in fig. 10, the casing of the cooling device 22 has a conical shape with a small upper part and a large lower part, the cold air branch pipe of the vortex tube is communicated with the bottom of the cooling device 22, the normal temperature water pipe 23 is communicated with the top of the cooling device 22, the pipe diameter of the supercooling water pipe 24 of the cooling device 22 is 0.5-0.7 times that of the normal temperature water pipe 23, and the supercooling water temperature is controlled at 5-12 ℃. The cold air of the vortex tube is sprayed out through the capillary nozzle at the bottom of the cooling device 22 and gradually moves upwards, and in the process of the upward movement of the air, the space gradually narrows, and the concentration of the cold air bubbles in the water gradually increases, so that even if the efficiency of the heat exchange between the cold air and the water gradually increases, the cold air is discharged through a pipeline after the heat exchange of the cold air is completed. The water cooled by the cooling device is discharged from the supercooling water pipe 24 while the temperature is controlled to 5-12 ℃. Level sensors 31 and 32 are provided in the cooling device 22, the sensor 31 being located in the lower part of the sensor 32. When the liquid level is at the position of the sensor 31, the rotation speed of the pump is kept stable; when the liquid level reaches the position of the sensor 32, the rotation speed of the pump is increased, the liquid discharge flow is increased, and the liquid level is lowered; when the liquid level is slightly below the sensor 31, the pump speed is reduced, causing the liquid level to rise.
The inside of the washing section V is provided with a compressed air supply port 25 and a second air exhaust port 26, the compressed air supply port 25 and the air exhaust port 26 are arranged on the same side wall, the compressed air supply port 25 is close to the buffering section IV, and the second air exhaust port 26 is close to the air drying section VI. The compressed air has the dilution effect, reduces the concentration of HNO 3 and water vapor, pumps away the mixed gas, inhibits the inner wall of the chamber in the washing section from forming liquid drops, and reduces the drop risk.
As shown in FIG. 11, the top of the inner wall of the chamber of the washing section V is a symmetrical slope, PVC plates are arranged on the slope, the surfaces of the PVC plates are coated with the TiO 2 super-hydrophilic coating 27, and an ultraviolet irradiation system for emitting ultraviolet light to the TiO 2 super-hydrophilic coating 27 is also arranged in the washing section V. The ultraviolet irradiation system is always in a working state and emits ultraviolet light to irradiate the TiO 2 coating, so that the TiO 2 coating is in a super-hydrophilic state, HNO 3 vapor and water vapor do not form liquid drops in the TiO 2 coating, but spread to form a liquid film, and flow along the inclined coating under the action of gravity and are discharged.
As shown in fig. 11 and 12, the ultraviolet irradiation system includes an indoor photovoltaic module 28, a super capacitor 29 and an ultraviolet LED lamp 30, where the indoor photovoltaic module 28, the super capacitor 29 and the ultraviolet LED lamp 30 are connected with a PLC through a relay to form a control circuit capable of being automatically adjusted and switched. The photovoltaic component charges a capacitor A, and the capacitor B supplies energy to the LED; after a period of time, the capacitor A supplies energy to the LED, and the photovoltaic module charges the capacitor B; the LED is always in a working state, and the TiO 2 coating is always in a super-hydrophilic state.
The above-described embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.

Claims (7)

1. The wet etching device for avoiding the top Mo retraction is sequentially provided with a dry section, an etching section, a buffer section, a washing section and an air drying section according to the transmission direction of the substrate;
The dry region is communicated with the etching region through a sealing door;
A first spray pipe for spraying etching liquid to the surface of the substrate is arranged in the etching zone, the etching zone is communicated with the buffer zone through a sealing door, a first air curtain air knife is arranged at the outlet of the etching zone, and the first air curtain air knife is used for blowing air to the surface of the substrate along the vertical direction to intercept the etching liquid on the substrate;
A buffer air knife is arranged in the buffer zone and is used for blowing air to the surface of the substrate along the oblique rear direction to intercept etching liquid on the substrate;
The inlet of the washing section is provided with a second air curtain air knife which is used for blowing air along the vertical direction to form an air curtain, etching steam in the buffer section is prevented from entering the washing section, the rear end of the washing section is provided with a water knife which is used for spraying the water curtain along the oblique front direction to dilute etching liquid remained on the substrate, and a second spray pipe which is used for spraying water to the surface of the substrate is arranged in the washing section;
The method is characterized in that: a first magnet device is arranged in the etching interval and is arranged at the rear end of the first air curtain air knife for reducing the viscosity of etching liquid on the substrate; a second magnet device is arranged in the buffer zone and is arranged at the rear end of the buffer air knife for reducing the viscosity of etching liquid on the substrate;
The wet etching device further comprises a vortex tube, a hot air port and a first air outlet are arranged in the buffer zone, the buffer air knife is arc-shaped in shape, a hot air pipe is arranged obliquely above the buffer air knife, a nozzle of the hot air pipe is opposite to the buffer air knife, and a hot air branch pipe of the vortex tube is respectively communicated with the hot air port and the hot air pipe;
The wet etching device further comprises a cooling device, a cold air branch pipe of the vortex tube is communicated with the cooling device, the cooling device is further connected with a normal-temperature water pipe, and a supercooled water pipe of the cooling device is communicated with a water knife in a water washing section;
the top of the inner wall of the chamber in the washing section is a symmetrical slope, a PVC plate is arranged on the slope, the surface of the PVC plate is coated with a TiO 2 super-hydrophilic coating, and an ultraviolet irradiation system for emitting ultraviolet light to the TiO 2 super-hydrophilic coating is further arranged in the washing section.
2. The wet etching apparatus for avoiding top Mo recessing of claim 1, wherein: the hot air port and the first air outlet are both positioned at the top of the buffer zone, the hot air port is close to the etching zone, and the first air outlet is close to the washing zone.
3. The wet etching apparatus for avoiding top Mo recessing of claim 1, wherein: the washing section is internally provided with a compressed air supply port and a second air exhaust port, the compressed air supply port and the air exhaust port are arranged on the same side wall, the compressed air supply port is close to the buffer section, and the second air exhaust port is close to the air drying section.
4. The wet etching apparatus for avoiding top Mo recessing of claim 1, wherein: the first magnet device comprises a magnet groove, a top cover plate and a U-shaped magnet, wherein the U-shaped magnet is arranged in the magnet groove, plastic is filled in the magnet groove to fix the U-shaped magnet, and the cross section of the top cover plate is triangular.
5. The wet etching apparatus for avoiding top Mo recessing of claim 1, wherein: the second magnet device comprises an upper magnet and a lower magnet, wherein the upper magnet and the lower magnet are composed of a magnet groove, a strip magnet embedded in the magnet groove and a top cover plate, the strip direction of the strip magnet is parallel to the substrate conveying direction, and the south pole and the north pole of the upper magnet and the north pole of the lower magnet are opposite.
6. The wet etching apparatus for avoiding top Mo recessing of claim 1, wherein: the ultraviolet irradiation system comprises an indoor photovoltaic module, a super capacitor and an ultraviolet LED lamp, wherein the indoor photovoltaic module, the super capacitor and the ultraviolet LED lamp are connected with a PLC through a relay to form a control circuit capable of being automatically adjusted and switched.
7. The wet etching apparatus for avoiding top Mo recessing of claim 1, wherein: the shell of the cooling device is conical, the upper part of the shell is small, the lower part of the shell is large, the cold air branch pipe of the vortex tube is communicated with the bottom of the cooling device, the normal-temperature water pipe is communicated with the top of the cooling device, the pipe diameter of the supercooling water pipe of the cooling device is 0.5-0.7 times of the pipe diameter of the normal-temperature water pipe, and the supercooling water temperature is controlled to be 5-12 ℃.
CN202311113227.2A 2023-08-31 2023-08-31 Wet etching device for avoiding top Mo indentation Active CN117153723B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311113227.2A CN117153723B (en) 2023-08-31 2023-08-31 Wet etching device for avoiding top Mo indentation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311113227.2A CN117153723B (en) 2023-08-31 2023-08-31 Wet etching device for avoiding top Mo indentation

Publications (2)

Publication Number Publication Date
CN117153723A CN117153723A (en) 2023-12-01
CN117153723B true CN117153723B (en) 2024-05-03

Family

ID=88886293

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311113227.2A Active CN117153723B (en) 2023-08-31 2023-08-31 Wet etching device for avoiding top Mo indentation

Country Status (1)

Country Link
CN (1) CN117153723B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070057482A (en) * 2005-12-02 2007-06-07 삼성전자주식회사 Wet etching apparatus
CN109087871A (en) * 2018-07-20 2018-12-25 深圳市华星光电技术有限公司 A kind of wet etching machine
CN114688832A (en) * 2022-03-30 2022-07-01 重庆大学 Washing drying device for wet etching

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070057482A (en) * 2005-12-02 2007-06-07 삼성전자주식회사 Wet etching apparatus
CN109087871A (en) * 2018-07-20 2018-12-25 深圳市华星光电技术有限公司 A kind of wet etching machine
CN114688832A (en) * 2022-03-30 2022-07-01 重庆大学 Washing drying device for wet etching

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究;范学丽;靖瑞宽;翁超;陈启省;王晏酩;肖红玺;刘还平;;液晶与显示;20160115(第01期);全文 *

Also Published As

Publication number Publication date
CN117153723A (en) 2023-12-01

Similar Documents

Publication Publication Date Title
JP5801821B2 (en) Method and apparatus for processing a silicon substrate
US10157754B2 (en) Liquid knife cleaning device
AU2006331081A1 (en) Device and method for treating the surfaces of substrates
ES2347052T3 (en) PROCEDURE TO CLEAN AND CORRECT A SUBSTRATE WITH A TRANSPARENT CONDUCTIVE OXIDE LAYER, AND DEVICE FOR THE PRACTICE OF THE PROCEDURE.
WO2016141675A1 (en) Wet etching equipment
CN104952765B (en) Substrate board treatment, nozzle and substrate processing method using same
CN102199007A (en) Water-saving cleaning system in carrier type substrate processing device
CN110197802B (en) Wet etching equipment
CN110429053A (en) A kind of wet etching equipment and wet etch process with removable cover
CN117153723B (en) Wet etching device for avoiding top Mo indentation
WO2015188412A1 (en) Photoresist stripping method and photoresist stripping device
CN109087871B (en) Wet etching machine
US20180108549A1 (en) Substrate processing apparatus
CN102092955B (en) Etching apparatus
US20200365423A1 (en) Wet etching apparatus
JP7496485B1 (en) Wet etching equipment to avoid top Mo indentation
CN105826221A (en) Substrate drying method and device for realizing same
KR101048813B1 (en) Substrate Processing Unit Collecting Chemical Liquid Fume
US20050022930A1 (en) Substrate treatment apparatus, substrate treatment method and substrate manufacturing method
CN104667559A (en) Etching acid mist dissociating device
CN105506661B (en) A kind of emergency stop processing method of steel band descaling bath
CN205723458U (en) A kind of substrate drying device
CN219290865U (en) Hydrochloric acid mist waste gas recovery system
US20150090299A1 (en) Processes and apparatus for cleaning, rinsing, and drying substrates
CN203824367U (en) Jet type steam-liquid contact heater

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant