CN117118038B - Pre-charging circuit and power supply equipment - Google Patents
Pre-charging circuit and power supply equipment Download PDFInfo
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- CN117118038B CN117118038B CN202311376946.3A CN202311376946A CN117118038B CN 117118038 B CN117118038 B CN 117118038B CN 202311376946 A CN202311376946 A CN 202311376946A CN 117118038 B CN117118038 B CN 117118038B
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- 239000003990 capacitor Substances 0.000 claims abstract description 141
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
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- 230000000087 stabilizing effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 10
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- 238000004088 simulation Methods 0.000 description 2
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- 238000004891 communication Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/007—Regulation of charging or discharging current or voltage
- H02J7/00712—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/345—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering using capacitors as storage or buffering devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J2207/20—Charging or discharging characterised by the power electronics converter
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Abstract
The embodiment of the invention discloses a pre-charging circuit and a power supply device, wherein the circuit comprises: a voltage-controlled semiconductor switching unit configured to change a switching state in response to a turn-on control signal, thereby controlling a charging state of the capacitor to be precharged; the precharge control capacitor is arranged between the voltage-controlled semiconductor switch unit and the voltage-controlled semiconductor switch unit, and the voltage-controlled semiconductor switch unit is connected with the capacitor to be precharged; a precharge control resistor for introducing a turn-on control signal and inputting the turn-on control signal to a controlled end of the voltage-controlled semiconductor switching unit; and an initialization unit for controlling the voltage-controlled semiconductor switching unit to be in a stable off state before the on control signal is set to a high level. The invention simplifies the circuit structure of the pre-charging circuit, reduces the circuit cost and improves the reliability of the pre-charging circuit by arranging the pre-charging resistor and the pre-charging capacitor to form the pre-charging circuit.
Description
Technical Field
The embodiment of the invention relates to the technical field of power supplies, in particular to a pre-charging circuit and power supply equipment.
Background
In a power supply device, a large capacity capacitor is provided in either a port or a power supply. When the power supply device is powered on, a large current surge is generated, and the risk of damaging circuit devices exists. The traditional capacitor pre-charging circuit is provided with a special pre-charging circuit and a bypass circuit of the pre-charging circuit, the controller firstly controls the pre-charging circuit to be conducted, and after the pre-charging is completed, the controller controls the bypass circuit to be conducted, so that the pre-charging process is completed by the bypass of the pre-charging circuit. The hardware circuit in the mode needs more devices, the program control logic is complex, and the comprehensive cost is high.
Disclosure of Invention
The technical problem which is mainly solved by the embodiment of the invention is to provide the pre-charging circuit and the power supply equipment, which can simplify the circuit structure of the pre-charging circuit, reduce the circuit cost and reduce the complexity of control logic.
In order to solve the technical problems, one technical scheme adopted by the embodiment of the invention is as follows: there is provided a precharge circuit applied to a power supply apparatus including an input power supply and a capacitor to be precharged, comprising: a voltage-controlled semiconductor switching unit configured to change a switching state in response to a turn-on control signal, thereby controlling a charging state of the capacitor to be precharged; the pre-charge control capacitor is arranged between the first end of the voltage-controlled semiconductor switch unit and the controlled end of the voltage-controlled semiconductor switch unit, the first end of the voltage-controlled semiconductor switch unit is connected with the capacitor to be pre-charged, and the second end of the voltage-controlled semiconductor switch unit is grounded; a precharge control resistor for introducing a turn-on control signal and inputting the turn-on control signal to a controlled end of the voltage-controlled semiconductor switching unit; and an initialization unit for controlling the voltage-controlled semiconductor switching unit to be in a stable off state before the on control signal is set to a high level.
In some embodiments, the initializing unit includes an initializing capacitor and an initializing resistor, a first end of the initializing capacitor is connected with a second end of the voltage-controlled semiconductor switch unit, and a second end of the initializing capacitor is connected with a controlled end of the voltage-controlled semiconductor switch unit; the initialization resistor is connected in parallel with the initialization capacitor; the initializing capacitor and the pre-charge control capacitor satisfy the following relationship:
，
wherein C is PC To precharge and control the capacitance C gs To initialize the capacitance, V gs（th） Threshold voltage V for switching on gate stage of voltage-controlled semiconductor switch unit in An input voltage for inputting a power supply;
the initializing resistor and the pre-charging control resistor satisfy the following relation:
，
wherein R is PC To precharge and control the resistance, R gs To initialize the resistance, V ctrl Level value of on control signal of high level, V gs(sta) And a gate voltage for stabilizing the turn-on of the voltage-controlled semiconductor switching unit.
In some embodiments, the precharge current I of the capacitor to be precharged c Calculated by the following formula:
，
wherein C is bulk Is the capacitor to be precharged.
In some embodiments, the types of voltage-controlled semiconductor switching cells include MOSFETs and IGBTs.
In some embodiments, when the voltage-controlled semiconductor switch unit is a P-MOSFET, the precharge circuit further comprises: and controlling a dry junction point connected between the precharge control resistor and the negative electrode of the input power supply in response to the on control signal.
In some embodiments, the precharge current I of the capacitor to be precharged c Calculated by the following formula:
。
in some embodiments, the types of dry junctions include open drain N-MOSFETs, open collector output NPN triodes, optocouplers, and relays. In order to solve the technical problems, another technical scheme adopted by the embodiment of the invention is as follows: there is provided a power supply apparatus including: inputting a power supply; a capacitor to be precharged; a post-stage circuit; and a precharge circuit as above.
In some embodiments, the pre-charging circuit and the capacitor to be pre-charged are connected in series and then connected in parallel with the post-stage circuit, and are connected between the positive pole and the negative pole of the input power supply; if the low-side driving circuit is applied to low-side driving, one end of the pre-charging circuit is connected to the negative electrode of the capacitor to be pre-charged, and the other end of the pre-charging circuit is connected to the negative electrode of the input power supply; if the high-side driving circuit is applied to the high-side driving, one end of the pre-charging circuit is connected to the positive electrode of the capacitor to be pre-charged, and the other end of the pre-charging circuit is connected to the positive electrode of the input power supply.
In some embodiments, the capacitor to be precharged is in parallel with the back-end circuit; if the low-side driving circuit is applied to low-side driving, the pre-charging circuit is connected between the negative electrode of the capacitor to be pre-charged and the negative electrode of the input power supply; if the high-side driving circuit is applied to high-side driving, the pre-charging circuit is connected between the positive electrode of the capacitor to be pre-charged and the positive electrode of the input power supply.
The beneficial effects of the embodiment of the invention are as follows: compared with the prior art, the embodiment of the invention can simplify the circuit structure of the pre-charging circuit, reduce the circuit cost, reduce the complexity of control logic and improve the reliability of the pre-charging circuit by arranging the pre-charging resistor and the pre-charging capacitor to form the pre-charging circuit.
Drawings
Fig. 1 is a schematic structural diagram of a precharge circuit according to an embodiment of the present invention;
fig. 2 is a circuit configuration diagram of a first precharge circuit according to an embodiment of the present invention;
FIG. 3 is a simulated waveform diagram of a first precharge circuit according to an embodiment of the present invention;
fig. 4 is a circuit configuration diagram of a second precharge circuit according to an embodiment of the present invention;
FIG. 5 is a simulated waveform diagram of a second pre-charge circuit according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first power supply apparatus according to an embodiment of the present invention;
fig. 7 is a schematic structural view of a second power supply apparatus according to an embodiment of the present invention;
fig. 8 is a schematic structural view of a third power supply apparatus according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a fourth power supply apparatus according to an embodiment of the present invention.
Detailed Description
In order to facilitate an understanding of the present application, the present application will be described in more detail below with reference to the accompanying drawings and specific examples. It will be understood that when an element is referred to as being "fixed" to another element, it can be directly on the other element or one or more intervening elements may be present therebetween. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or one or more intervening elements may be present therebetween. The terms "upper," "lower," "inner," "outer," "bottom," and the like as used in this specification are used in an orientation or positional relationship based on that shown in the drawings, merely to facilitate the description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application in this description is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used in this specification includes any and all combinations of one or more of the associated listed items.
In addition, the technical features described below in the different embodiments of the present application may be combined with each other as long as they do not collide with each other.
In some embodiments of the present application, in order to simplify the circuit structure of the capacitor pre-charging circuit, reduce the circuit cost and the complexity of the control logic, a pre-charging circuit is provided, the structure of which is shown in fig. 1, and the pre-charging circuit 10 includes: initialization unit 110, voltage-controlled semiconductor switch unit 120, precharge control capacitor C pc And a precharge control resistor R pc 。
Wherein the voltage-controlled semiconductor switching unit 120 is configured to change the switching state in response to the on control signal, thereby controlling the capacitor C to be precharged bulk A state of charge. In the embodiment of the present application, when the on control signal is at a high level, the voltage-controlled semiconductor switch unit 120 is turned from the off state to the on state, so that the capacitor C to be precharged bulk With input power V in Form a loop to make the capacitor C to be precharged bulk Entering a charging state; when the on control signal is low, the voltage-controlled semiconductor switch unit 120 is turned off to turn off the capacitor C to be precharged bulk With input power V in The loop is formed to further charge the capacitor C to be precharged bulk The charging is stopped.
In some embodiments of the present application, the types of voltage-controlled semiconductor switching cells 120 include MOSFET and IGBT-like voltage-controlled semiconductor switches.
Pre-charge control capacitor C pc Is arranged between the first end of the voltage-controlled semiconductor switch unit 120 and the controlled end of the voltage-controlled semiconductor switch unit, the first end of the voltage-controlled semiconductor switch unit 120 and the capacitor C to be precharged bulk A second terminal of the voltage-controlled semiconductor switching unit 120 is connected to ground.
Pre-charge control resistor R pc For introducing the on control signal and inputting the on control signal to the controlled terminal of the voltage-controlled semiconductor switching unit 120.
The initialization unit 110 is used for controlling the voltage-controlled semiconductor switching unit 120 to be in a stable off state before the on control signal is set to a high level.
Referring to fig. 2, fig. 2 is a circuit diagram of a first precharge circuit according to an embodiment of the present application, wherein the precharge circuit includes an initialization unit 110, a voltage-controlled semiconductor switch unit 120, and a precharge control capacitor C pc And a precharge control resistor R pc 。
In the embodiment of the present application, the initializing unit 110 includes an initializing capacitor C gs And initializing resistor R gs The method comprises the steps of carrying out a first treatment on the surface of the The voltage-controlled semiconductor switch unit 120 is an N-channel MOS transistor M1.
It should be noted that the initializing capacitor and the precharge control capacitor satisfy the following relationship:
， （1）
wherein C is PC To precharge and control the capacitance C gs To initialize the capacitance, V gs（th） Threshold voltage V for switching on gate stage of voltage-controlled semiconductor switch unit in Is the input voltage of the input power supply.
In some embodiments, to ensure that the voltage-controlled semiconductor switch unit is reliably turned off, a certain margin needs to be left, so by way of example and not limitation, the initializing capacitor and the precharge control capacitor may satisfy the following relationship:
。
on the premise of satisfying the above formula (1), the capacitor ratio configuration is aimed at ensuring that the voltage-controlled semiconductor switch unit 120 is reliably turned off at the moment of power-up.
The initializing resistor and the pre-charging control resistor satisfy the following relation:
， （2）
wherein R is PC To precharge and control the resistance, R gs To initialize the resistance, V ctrl Level value of on control signal of high level, V gs(sta) The gate voltage for stabilizing the voltage-controlled semiconductor switch unit is greater than V gs(th) The specific parameters are determined by the designer according to the circuit conditions. Namely, R gs The value is generally required to ensure that the gate voltage can be reliably turned on and the on-resistance of the voltage-controlled semiconductor switching element 120 is at a low level.
V is also described as gs(sta) Less than or equal to V ctrl 。
Specifically, the power supply V is input in Is connected to the capacitor C to be precharged bulk Is input with a power supply V in Is connected to the point O in fig. 2, i.e. to ground. Capacitor C to be precharged bulk The pre-charging process of (a) is to pre-charge the capacitor C by a certain current limiting measure bulk Input power V of the negative electrode and O point of (2) in Is connected with the negative pole of the input power V in To-be-precharged capacitor C bulk Charging to make the capacitor C to be precharged bulk The voltage at two ends is charged from 0V to the input power V in Is equal to the voltage of the voltage source.
Therefore, a voltage-controlled semiconductor switch unit 120 (such as MOSFET, IGBT, etc., in the figure, N-channel MOS transistor M1 is taken as an example) is provided as the pre-charge circuit 10The switch, the drain of the N-channel MOS transistor M1, i.e. the point A in FIG. 2, is connected to the capacitor C to be precharged bulk Is a negative electrode of (a); the source electrode of the N-channel MOS tube M1 is connected to the O point in FIG. 2, namely an input power supply V in Can block the input power V in To the capacitor C to be precharged bulk Current I in direction (point a to point O in fig. 2) c 。
A precharge control capacitor C is arranged pc Is connected between two poles of DG (drain-gate electrode) of N channel MOS tube M1, i.e. pre-charge control capacitor C pc The capacitor capacity is calculated by considering the influence of the DG bipolar capacitance of the N-channel MOS tube M1 when the capacitor capacity is calculated by connecting the capacitor capacity with the DG capacitance of the N-channel MOS tube M1 in parallel, and the capacitor C is directly controlled by pre-charging pc Characterization takes this effect into account the total capacitance.
An initialization capacitor C is arranged gs And initializing resistor R gs Is connected between two poles of GS (gate-source) of N-channel MOS tube M1, namely initializing capacitor C gs The capacitor C is initialized directly after the capacitor C is connected in parallel with the GS capacitor of the N-channel MOS transistor M1, and the influence of the GS bipolar capacitor of the N-channel MOS transistor M1 is considered when the capacitor C is calculated gs Characterization takes this effect into account the total capacitance.
A precharge control resistor R is arranged pc The gate electrode of the N channel MOS tube M1 is connected with the output end of the control conduction signal.
The on control signal is a level signal, which is applied to two points C, O in fig. 2, the low level is 0V, and the N-channel MOS tube M1 is controlled to be in an off state; the high level is a positive voltage signal, defined as V ctrl The amplitude of the voltage is larger than the threshold voltage V of the gate electrode of the N-channel MOS transistor M1 gs(th) To ensure that N-channel MOS transistor M1 can be normally turned on.
Control capacitor C by configuration of precharge pc Pre-charge control resistor R pc And capacitor C to be precharged bulk The ratio between them can control the capacitor C to be precharged when the on control signal jumps to high level bulk Upper precharge current I c The specific relation is as follows:
。 （3）
in addition, initialize capacitor C gs And a precharge control capacitor C PC The following relationship is satisfied:
， （4）
wherein V is gs（th） Switching on threshold voltage, V, for a gate of the voltage-controlled semiconductor switching unit in An input voltage for the input power supply;
initializing resistor R gs And a precharge control resistor R PC The method meets the following conditions:
， （5）
wherein V is ctrl Level value of on control signal of high level, V gs(sta) And a gate voltage for stabilizing the turn-on of the voltage-controlled semiconductor switching unit.
Initializing capacitor C gs Initializing resistor R gs Pre-charge control capacitor C PC Pre-charge control resistor R PC And when the relation is satisfied, the function of keeping the N-channel MOS tube M1 in a reliable off state before the on control signal is set to be high level after the power is connected is achieved.
The specific deduction process is as follows:
with the O point as a reference, in an initial state, the control signal V is conducted ctrl =0v, voltage between points b and C of 0V, voltage at point a of V in 。
When the N-channel MOS transistor M1 needs to be turned on, the capacitor C to be precharged bulk When incorporated into a power loop, V ctrl Is set at high level, such as 12V, and is applied across C, O by pre-charging control resistor R pc And initializing resistor R gs The voltage-dividing network pair initializes the capacitor C gs Pre-charge control capacitor C pc Charging is performed.
V BO Is B-The voltage at two ends of O, namely the GS voltage of the N channel MOS tube M1. When V is BO Does not reach the turn-on threshold voltage V of the N-channel MOS transistor M1 gs(th) Before, the N channel MOS tube M1 is not conducted, and the voltage at the point A is still V in 。
When V is BO Reaching the turn-on threshold voltage V of the N-channel MOS transistor M1 gs(th) When the N channel MOS tube M1 starts to conduct, V ctrl The resistor R can be controlled by pre-charging pc And a precharge control capacitor C pc N-channel MOS tube M1 pair pre-charge control capacitor C pc And discharging, and gradually reducing the voltage at the point A to be equal to the potential at the point O. The process comprises the following steps:
， （6）
wherein g fs Is the transconductance coefficient of the N-channel MOS tube M1, which is generally 10 2 S stage, controlled precharge current I c Of the order of 10 0 Class a, therefore, has the following approximate relationship throughout the capacitor pre-charge process:
，（7）
this phenomenon, commonly known as the Miller effect, V BO This voltage remains substantially unchanged during the process, and the corresponding voltage plateau is referred to as the miller plateau.
In the Miller stage, a control signal is conducted to a precharge control capacitor C pc Discharge, discharge current I pc The following relationship is satisfied:
， （8）
meanwhile, because of the relationship of the Miller platform, the potential of the point B is basically kept constant, the voltage of the point B-A changes, and the absolute value of the potential change of the point A is consistent with that of the capacitor C to be precharged bulk Is uniform. The following formula is shown:
， （9）
thus, a precharge current I can be established c And a precharge control capacitor C pc Is set to the discharge current I of pc Relationship between:
， （10）
while at this stage, the control capacitor C is precharged pc Is set to the discharge current I of pc The resistor R can be controlled by pre-charging pc The determination is specifically as follows:
，（11）
wherein V is BO ≈V gs(th) Is approximately constant, there is
， （12）
Coupled to obtain a precharge current I c The method comprises the following steps:
， （13）
in general, R is configured gs >>R pc Therefore, the control capacitor C is precharged pc Is set to the discharge current I of pc The expression can be simplified as:
， （14）
further, precharge current I c The expression can be simplified as:
， （15）
in the capacitor C to be precharged bulk N-channel MOS tube M1Turn-on threshold voltage V gs(th) Turn on control signal V ctrl Is a circuit intrinsic parameter. Control capacitor C by design precharge pc Pre-charge control resistor R pc I.e. the value of the capacitor C to be precharged can be determined bulk Is provided.
As described above, the N-channel MOS transistor M1 is taken as an example of the precharge circuit of the voltage-controlled semiconductor switching unit 120, i.e., the circuit shown in fig. 2. In the present embodiment, the power supply V is input in 60V, the capacitor C to be precharged of 220uF is needed to be precharged through a precharge circuit bulk Charging is performed. The circuit is controlled by an N-channel MOS tube M1, V of which gs(th) At 2-4V, the transconductance coefficient is at least 11S, DG capacitance is 3.4pF, GS capacitance is 660pF. Setting:
pre-charge control capacitor C pc =20nF；
Pre-charge control resistor R pc =10kΩ；
Initializing capacitor C gs =1uF；
Initializing resistor R gs =100kΩ；
On control signal V ctrl =15V。
The calculation is performed according to the parameters described above,
simulation verification shows whether the capacitor pre-charge effect under the pre-charge circuit is shown in fig. 3.
The first column of curves in FIG. 3 is the voltage V across the capacitor to be pre-charged cb The second column is the precharge current I of the capacitor c The third column is GS voltage V of N-channel MOS tube M1 GS 。
The dashed line in FIG. 3 shows a non-configured precharge circuit, precharging current I when the on control signal is set to a high level c And rapidly rises, is not constrained by a control circuit, and has a peak exceeding 160A.
The solid line in FIG. 3 shows a pre-charge circuit with a configuration that when the on control signal is set to a high level, V GS Gradually rise and enter a Miller stage at a voltage of about 5V during the processIn the capacitor C to be precharged bulk The voltage at two ends rises linearly, and the precharging current I c Is also stably controlled to be about 10A, and is close to the preset parameters.
In other embodiments of the present application, a second pre-charge circuit is further provided, and the circuit structure diagram of the second pre-charge circuit is shown in fig. 4, where the pre-charge circuit also uses a P-channel MOS transistor as a voltage-controlled semiconductor switch unit, and in the embodiment of the present application, a certain fixed voltage is no longer used as a conduction control signal of the P-channel MOS transistor M1, and a dry junction signal is used for control.
The precharge circuit comprises an initialization unit 110, a voltage-controlled semiconductor switch unit 120, and a precharge control capacitor C pc Pre-charge control resistor R pc And a dry junction D1.
The dry node D1 responds to the conduction control signal to control the pre-charge control resistor R pc And input power V in Is connected between the cathodes of the battery.
In the embodiment of the present application, the initializing unit 110 includes an initializing capacitor C gs And initializing resistor R gs The method comprises the steps of carrying out a first treatment on the surface of the The voltage-controlled semiconductor switch unit 120 is a P-channel MOS transistor M1.
Specifically, the power supply V is input in The anode of the transistor is connected to the source electrode of the P-channel MOS tube M1, and is input with a power supply V in Is connected to the point O in fig. 4, i.e. to ground. The drain electrode of the P-channel MOS tube M1 is connected to the capacitor C to be precharged bulk To be precharged to C bulk Is connected to the O-point. Initializing capacitor C gs A pre-charge control capacitor C connected between the source and gate of the P-channel MOS tube M1 pc An initialization resistor R connected between the drain electrode and the gate electrode of the P-channel MOS tube M1 gs And initializing the capacitor C gs And are connected in parallel. Pre-charge control resistor R pc One end of the transistor is connected to the gate electrode of the P-channel MOS tube M1, and the control resistor R is precharged pc Is connected to one end of the dry junction D1. The other end of the dry node D1 is connected to the O-point.
In some embodiments of the present application, the types of dry junctions include open collector NPN transistors, open drain N-MOSFETs, optocouplers, and relays.
In this embodiment, the precharge current I of the capacitor to be precharged c Calculated by the following formula:
。 （15）
as described above, the P-channel MOS transistor M1 is taken as an example of the precharge circuit of the voltage-controlled semiconductor switching unit 120, i.e., the circuit shown in fig. 4. In the present embodiment, the power supply V is input in 60V, the capacitor C to be precharged of 220uF is needed to be precharged through a precharge circuit bulk Charging is performed. The circuit is controlled by a P-channel MOS tube M1, V thereof gs(th) The transconductance coefficient is 65S, the DG capacitance is 150pF, and the GS capacitance is 9.04nF at-1 to-2V. Setting:
pre-charge control capacitor C pc =20nF；
Pre-charge control resistor R pc =50kΩ；
Initializing capacitor C gs =2.2uF；
Initializing resistor R gs =10kΩ；
The control signal is switched from 60V to 0V, and the analog dry node signal is conducted and pulled down.
The calculation is performed according to the parameters described above,
simulation verification shows that the capacitor pre-charge effect under the pre-charge circuit is shown in fig. 5, wherein,
the first column of the curve in FIG. 5 is the voltage V across the capacitor to be pre-charged cb The second column is the precharge current I of the capacitor c GS voltage V of MOSFET in the third column GS 。
The dashed line in FIG. 5 shows a non-configured precharge circuit, precharging current I when the on control signal is set to a high level c And rapidly rises, is not constrained by a control circuit, and has a peak exceeding 180A.
The solid line in FIG. 5 shows that there is a pre-charge circuit configured to provide V when the dry node control signal is set to a low level GS Gradually go up in the negative directionHigh and enters a miller stage at a voltage of about-2V, during which the capacitor C is to be precharged bulk The voltage at two ends rises linearly, and the precharging current I c Is also stably controlled to be about 10A, and is close to the preset parameters.
Compared with the prior art, the embodiment of the invention can simplify the circuit structure of the pre-charging circuit, reduce the circuit cost, reduce the complexity of control logic and improve the reliability of the pre-charging circuit by arranging the pre-charging resistor and the pre-charging capacitor to form the pre-charging circuit.
Based on the precharge circuit described in the foregoing embodiment, the embodiment of the present invention further provides a power supply apparatus, a schematic structural diagram of which is shown in fig. 6, including: input power supply 20, capacitor C to be precharged bulk A post-stage circuit 30 and a precharge circuit 10 as described.
In the embodiment of the present application, the power supply device is applied to the low-side driving, the precharge circuit 10 and the capacitor C to be precharged bulk Connected in parallel with the back-end circuit 30 after being connected in series and connected between the positive electrode and the negative electrode of the input power supply 10, one end of the precharge circuit 10 is connected to the capacitor C to be precharged bulk The other end of the precharge circuit 10 is connected to the negative electrode of the input power supply 20.
In other embodiments of the present application, there is also provided a power supply apparatus for high-side driving, the power supply apparatus having a structure schematically shown in fig. 7, the power supply apparatus comprising: input power supply 20, capacitor C to be precharged bulk A post-stage circuit 30 and a precharge circuit 10 as described.
Precharge circuit 10 and capacitor C to be precharged bulk Connected in parallel with the back-end circuit 30 after being connected in series and connected between the positive electrode and the negative electrode of the input power supply 10, one end of the precharge circuit 10 is connected to the capacitor C to be precharged bulk The other end of the precharge circuit 10 is connected to the positive electrode of the input power supply 20.
It should be noted that, in the two power supply devices provided in the above embodiments, the precharge circuit 10 is disposed in the capacitor C to be precharged bulk The precharge circuit 10 may also be provided on the main power loop. Based on this, the embodiment of the invention also provides a third power supply device,the structure of which is schematically shown in fig. 8.
The power supply device includes: input power supply 20, capacitor C to be precharged bulk A post-stage circuit 30 and a precharge circuit 10 as described. The power supply device is applied to low-side driving, and the capacitor C to be precharged bulk The pre-charge circuit 10 is connected in parallel with the post-stage circuit 30 and is connected to the capacitor C to be pre-charged bulk Between the negative electrode of the input power source 20.
The pre-charging circuits 10 are all arranged on the branches of the capacitor to be pre-charged, and only the large-capacity capacitor is controlled to be switched on and off to the main power circuit, so that the current is smaller, and the loss and the heating of the corresponding switching device are also smaller; the precharge circuits 10 are all arranged on the main power loop, and the switching devices can be used for controlling the communication of the whole power input/output ports at the same time so as to play a role in protecting the power supply or the equipment.
In other embodiments of the present application, there is also provided a fourth power supply apparatus, the structure of which is schematically shown in fig. 9.
The power supply device includes: input power supply 20, capacitor C to be precharged bulk A post-stage circuit 30 and a precharge circuit 10 as described. The power supply device is applied to high-side driving, and the capacitor C to be precharged bulk The pre-charge circuit 10 is connected in parallel with the post-stage circuit 30 and is connected to the capacitor C to be pre-charged bulk Between the positive electrode of the input power source 20.
Compared with the prior art, the embodiment of the invention can simplify the circuit structure of the pre-charging circuit, reduce the circuit cost, reduce the complexity of control logic and improve the reliability of the pre-charging circuit by arranging the pre-charging resistor and the pre-charging capacitor to form the pre-charging circuit.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; the technical features of the above embodiments or in the different embodiments may also be combined under the idea of the present application, the steps may be implemented in any order, and there are many other variations of the different aspects of the present application as above, which are not provided in details for the sake of brevity; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (7)
1. A precharge circuit for use in a power supply apparatus including an input power supply and a capacitor to be precharged, comprising:
a voltage-controlled semiconductor switching unit configured to change a switching state in response to a turn-on control signal, thereby controlling a charging state of the capacitor to be precharged;
a precharge control capacitor arranged between a first end of the voltage-controlled semiconductor switch unit and a controlled end of the voltage-controlled semiconductor switch unit, wherein the first end of the voltage-controlled semiconductor switch unit is connected with the capacitor to be precharged, and a second end of the voltage-controlled semiconductor switch unit is grounded;
a precharge control resistor for introducing the on control signal and inputting the on control signal to a controlled end of the voltage-controlled semiconductor switching unit;
an initializing unit for controlling the voltage-controlled semiconductor switching unit to be in a stable off state before the on control signal is set to a high level;
the initialization unit includes an initialization capacitor and an initialization resistor,
the first end of the initializing capacitor is connected with the second end of the voltage-controlled semiconductor switch unit, and the second end of the initializing capacitor is connected with the controlled end of the voltage-controlled semiconductor switch unit;
the initialization resistor is connected with the initialization capacitor in parallel;
the initializing capacitor and the pre-charging control capacitor satisfy the following relationship:
，
wherein the method comprises the steps of，C pc Control capacitance for the precharge, C gs For the initialization capacitance, V gs（th） Opening threshold voltage for gate of the voltage-controlled semiconductor switch unit, V in An input voltage for the input power supply;
the initializing resistor and the pre-charging control resistor satisfy the following relation:
，
wherein R is pc Controlling the resistance for the pre-charge, R gs For the initialization resistor, V ctrl Level value of on control signal of high level, V gs(sta) A gate voltage for stabilizing the voltage-controlled semiconductor switching unit on;
precharge current I of the capacitor to be precharged c Calculated by the following formula:
，
wherein C is bulk And the capacitor to be precharged is obtained.
2. The circuit of claim 1, wherein the types of voltage-controlled semiconductor switching cells include MOSFETs and IGBTs.
3. The circuit of claim 1, wherein when the voltage-controlled semiconductor switching unit is a P-MOSFET, the precharge circuit further comprises:
and responding to the conduction control signal to control a dry junction point connected between the pre-charge control resistor and the negative electrode of the input power supply.
4. A circuit according to claim 3, wherein the types of dry junctions include open drain N-MOSFETs, open collector output NPN transistors, optocouplers and relays.
5. A power supply apparatus, characterized by comprising:
inputting a power supply;
a capacitor to be precharged;
a post-stage circuit;
and a pre-charge circuit as claimed in any one of claims 1 to 4.
6. The apparatus of claim 5, wherein the pre-charge circuit and the capacitor to be pre-charged are connected in series and then connected in parallel with the post-stage circuit, and are connected between the positive and negative poles of the input power source;
if the low-side driving circuit is applied to low-side driving, one end of the pre-charging circuit is connected to the negative electrode of the capacitor to be pre-charged, and the other end of the pre-charging circuit is connected to the negative electrode of the input power supply;
if the high-side driving circuit is applied to high-side driving, one end of the pre-charging circuit is connected to the positive electrode of the capacitor to be pre-charged, and the other end of the pre-charging circuit is connected to the positive electrode of the input power supply.
7. The apparatus of claim 5, wherein the capacitor to be precharged is in parallel with the post-stage circuit;
if the low-side driving circuit is applied to low-side driving, the pre-charging circuit is connected between the negative electrode of the capacitor to be pre-charged and the negative electrode of the input power supply;
if the power supply is applied to high-side driving, the pre-charging circuit is connected between the positive electrode of the capacitor to be pre-charged and the positive electrode of the input power supply.
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| JP5343904B2 (en) * | 2010-03-23 | 2013-11-13 | 住友電気工業株式会社 | Semiconductor device |
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| US9573474B2 (en) * | 2014-03-06 | 2017-02-21 | Ford Global Technologies, Llc | Capacitor precharging and capacitance/resistance measurement in electric vehicle drive system |
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