CN117117619A - YAG side pump cavity external frequency doubling ultraviolet laser - Google Patents

YAG side pump cavity external frequency doubling ultraviolet laser Download PDF

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Publication number
CN117117619A
CN117117619A CN202310707801.0A CN202310707801A CN117117619A CN 117117619 A CN117117619 A CN 117117619A CN 202310707801 A CN202310707801 A CN 202310707801A CN 117117619 A CN117117619 A CN 117117619A
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CN
China
Prior art keywords
frequency doubling
side pump
yag
ultraviolet laser
mirror
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Pending
Application number
CN202310707801.0A
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Chinese (zh)
Inventor
任席奎
邹武兵
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Shenzhen Inte Laser Technology Co ltd
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Shenzhen Inte Laser Technology Co ltd
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Priority to CN202310707801.0A priority Critical patent/CN117117619A/en
Publication of CN117117619A publication Critical patent/CN117117619A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0816—Configuration of resonator having 4 reflectors, e.g. Z-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/117—Q-switching using intracavity acousto-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

Abstract

The application belongs to the field of frequency multiplication lasers, and discloses a YAG side pump cavity external frequency multiplication ultraviolet laser, which comprises: the device comprises a full-reflecting mirror assembly, an acousto-optic Q switch modulator, a semiconductor side pump, a half-reflecting mirror assembly, a main frequency doubling assembly and a triangular prism; a resonant cavity light path is formed between the full reflecting mirror component and the half reflecting mirror component; the acousto-optic Q switch modulator is arranged in the resonant cavity light path; the semiconductor side pump comprises a YAG crystal rod and is arranged in the resonant cavity light path; the main frequency doubling component is positioned at one side of the half reflecting mirror component far away from the resonant cavity light path; the triangular prism is arranged on one side of the main frequency doubling component, which is far away from the half reflecting mirror component; according to the application, the main frequency doubling component is integrated outside the cavity of the resonant cavity light path, and the YAG crystal rod and the side pump are utilized to improve the absorptivity and the conversion efficiency, so that the conversion rate of the laser is improved, and meanwhile, the crystal damage generated by the placement in the resonant cavity light path can be reduced.

Description

YAG side pump cavity external frequency doubling ultraviolet laser
Technical Field
The application relates to the frequency doubling laser technology, in particular to a YAG side pump cavity outer frequency doubling ultraviolet laser.
Background
In the field of traditional lasers, most ultraviolet nanosecond lasers on the market are in an end pumping mode, but due to the thermal lens effect existing in an end pump of the traditional end pumping lasers, when the pumping energy density is too high, the damage threshold value of the end face of a gain crystal has a limit value, the gain crystal is easy to break, compared with the gain crystal, the conversion rate of intracavity frequency doubling is higher, but the frequency tripled crystal is easy to break under high power in an intracavity frequency doubling mode;
therefore, it is an urgent problem to be solved how to improve the conversion rate of the laser and reduce the damage to the optical components in the prior art.
Disclosure of Invention
The application mainly aims to provide a YAG side pump cavity external frequency doubling ultraviolet laser, which aims to solve the technical problem of how to improve the conversion rate of the laser and reduce the damage to an optical component in the prior art.
In order to achieve the above object, a first aspect of the present application provides a YAG-side pump cavity external frequency doubling ultraviolet laser, comprising: the device comprises a full-reflecting mirror assembly, an acousto-optic Q switch modulator, a semiconductor side pump, a half-reflecting mirror assembly, a main frequency doubling assembly and a triangular prism;
a resonant cavity light path is formed between the full reflecting mirror component and the half reflecting mirror component;
the acousto-optic Q switch modulator is arranged in the resonant cavity light path;
the semiconductor side pump comprises a YAG crystal rod and is arranged in the resonant cavity light path;
the main frequency doubling component is positioned at one side of the half reflecting mirror component far away from the resonant cavity light path;
the triangular prism is arranged on one side, far away from the half reflecting mirror assembly, of the main frequency doubling assembly.
Further, the total reflection mirror assembly includes a first total reflection mirror plate, a second total reflection mirror plate, and a third total reflection mirror plate;
the first total reflection mirror, the second total reflection mirror, the third total reflection mirror and the half reflection mirror component form Z-shaped distribution.
Further, the acousto-optic Q-switch modulator is located between the first and second total reflection mirrors.
Further, the semiconductor side pump is located between the second total reflection mirror and the third total reflection mirror.
Further, the surface of the first total reflection mirror is plated with a 1064nm high-reflection film, and the reflectivity is more than or equal to 99.9%;
the surface of the second total reflecting mirror is plated with a 1064nm high-reflection film;
and the surface of the third total reflection mirror is plated with a 1064nm high-reflection film.
Further, a polarizer assembly is included and is positioned in the resonant cavity optical path while being positioned between the acousto-optic Q-switch modulator and the second total reflection mirror.
Further, a pumping bar is arranged inside the semiconductor side pump module.
Further, the surface of the half mirror assembly lens is plated with 1064 high-transmittance film with reflectivity of 80%, so that 20% output is realized.
Further, the main frequency doubling component comprises a frequency doubling crystal, a frequency tripling crystal and a corresponding frequency doubling adjusting frame.
Further, the triangular prism material is fused quartz, and the surface of the triangular prism material is coated with 355 antireflection film.
The beneficial effects are that:
the optical path structure integrates the main frequency doubling component outside the cavity of the resonant cavity optical path, realizes lower heavy frequency and high pulse energy output by using the acousto-optic Q switch modulator, reduces loss in the process by utilizing higher absorptivity and conversion efficiency of the YAG crystal rod and side pumping, and can reduce crystal damage caused by placement in the resonant cavity optical path while improving the conversion rate of the laser.
Drawings
FIG. 1 is a schematic diagram of a YAG side pump cavity external frequency doubling ultraviolet laser according to an embodiment of the present application;
wherein: 1. a first total reflection mirror; 2. an acousto-optic Q-switch modulator; 3. a polarizer assembly; 4. a semiconductor side pump; 5. a module positive electrode; 6. a module negative electrode; 7. YAG crystal bars; 8. a water inlet; 9. a water outlet; 10. a third total reflection mirror; 11. a half mirror assembly; 12. a bracket; 13. a frequency doubling crystal; 14. a frequency tripled crystal; 15. a frequency multiplication adjusting frame; 17. triangular prism; 19. and a second total reflection mirror.
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless specifically defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; the connection may be mechanical connection, direct connection or indirect connection through an intermediate medium, and may be internal connection of two elements or interaction relationship of two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
Referring to fig. 1, the application provides a YAG side pump cavity external frequency doubling ultraviolet laser, comprising: the full-reflecting mirror component, the acousto-optic Q switch modulator 2, the semiconductor side pump 4, the half-reflecting mirror component 11, the main frequency doubling component and the triangular prism 17;
a resonant cavity light path is formed between the full reflecting mirror assembly and the half reflecting mirror assembly 11;
the acousto-optic Q switch modulator 2 is arranged in the resonant cavity light path;
the semiconductor side pump 4 comprises a YAG crystal rod 7 which is arranged in the resonant cavity light path;
the main frequency doubling component is positioned at one side of the half mirror component 11 away from the resonant cavity light path;
the triangular prism 17 is disposed on a side of the main frequency doubling component away from the half mirror component 11.
In this embodiment, the YAG side pump cavity external frequency doubling ultraviolet laser includes a full-reflection mirror assembly, an acousto-optic Q-switch modulator 2, a semiconductor side pump 4, a half-reflection mirror assembly 11, a main frequency doubling assembly, and a triangular prism 17; the total reflection mirror assembly comprises a plurality of total reflection mirrors, the total reflection mirrors are used for determining and adjusting the direction of a light path, then a resonant cavity light path is formed between the total reflection mirrors and the half reflection mirror assembly 11, a semiconductor side pump 4 of a YAG crystal rod 7 is adopted and placed in the resonant cavity light path to serve as an excitation light source, the YAG crystal rod 7 is preferably a YAG crystal rod 7 with the size of 3mm in diameter and 67mm in length, and serves as a four-energy-level system, has higher fluorescence lines for 1064nm, has higher absorptivity and conversion efficiency, can realize stronger heat conductivity coefficient, high damage threshold and small expansion coefficient compared with other crystals, is more suitable for side pumping, and has ND+ (neodymium) ion doping concentration of 0.6 percent in the YAG crystal rod 7 for realizing uniform light emission for a long time;
the resonant cavity optical path is also internally provided with an acousto-optic Q-switch modulator 2, preferably, the acousto-optic Q-switch modulator 2 with a transducer is adopted, compared with the conventional acousto-optic Q-switch modulator 2, the resonant cavity optical path has higher modulation efficiency and larger bandwidth, the refractive index of a medium in the acousto-optic Q-switch modulator 2 can be changed, the resonant cavity optical path has upper energy level energy storage, and when no sound wave exists, the energy storage is released to form oscillation, and in this way, continuous light can be compressed into pulse light of tens of nanoseconds; the half mirror can finish the output of the appointed ratio of the laser, then the infrared laser output is subjected to frequency multiplication and summation through a main frequency multiplication component integrated outside the resonant cavity optical path, the crystal angle in the main frequency multiplication component can be adjusted through a frequency multiplication adjusting frame 15, the optical path is coaxial, the conversion efficiency is improved, and then the light beam with appointed nano value is emitted through a triangular prism 17; the optical path structure provided by the embodiment can improve the conversion rate of the laser and reduce the crystal damage generated by placing the laser in the optical path of the resonant cavity.
In one embodiment, the first total reflection mirror 1, the second total reflection mirror 19, the third total reflection mirror 10 and the half reflection mirror assembly 11 form a "Z" -shaped distribution.
In this embodiment, the first total reflection mirror 1, the second total reflection mirror 19, the third total reflection mirror 10 and the half mirror assembly 11 form a "Z" shape and are sequentially arranged and distributed, where the first total reflection mirror 1 adjusts an angle of the optical path, the second total reflection mirror 19 and the third total reflection implement a propagation direction of the optical path, and then finally the optical path is incident on the half mirror assembly 11 to form a "Z" shaped resonant cavity optical path, and the "Z" shaped resonant cavity optical path is structurally more exquisite compared with other resonant cavity optical paths, so that the formation of redundant stray light can be reduced, thereby avoiding loss in the process and enabling the conversion rate to be higher.
In an embodiment, the acousto-optic Q-switch modulator 2 is located between the first and second total reflection mirrors 1 and 19.
In this embodiment, the acousto-optic Q-switch modulator 2 is located between the first total reflection mirror 1 and the second total reflection mirror 19, and is closer to the first total reflection mirror 1 than the second total reflection mirror 19, preferably 3 cm distance, and fine distance control can enable the acousto-optic Q-switch modulator 2 to achieve output of low-repetition frequency high pulse energy, wherein the acousto-optic Q-switch modulator 2 preferably adopts the acousto-optic Q-switch modulator 2 with a transducer, and compared with the conventional acousto-optic Q-switch modulator 2, the acousto-optic Q-switch modulator has higher modulation efficiency and larger bandwidth, can change the refractive index of a medium in the acousto-optic Q-switch modulator 2, has upper energy storage, and in the absence of sound waves, the stored energy is released to form oscillation, in this way, continuous light can be compressed into pulse light of tens of nanoseconds.
In an embodiment, the semiconductor-side pump 4 is located between the second total reflection mirror 19 and the third total reflection mirror 10.
In this embodiment, the semiconductor side pump 4 is located between the second total reflection mirror 19 and the third total reflection mirror 10, a YAG crystal rod 7 is disposed in the semiconductor side pump 4, the semiconductor side pump 4 is placed in the optical path of the resonant cavity as an excitation light source, and the optical path can be folded back and repeatedly pass through the YAG crystal rod 7, so as to achieve higher conversion efficiency.
In one embodiment, the surface of the first total reflection mirror 1 is plated with a 1064nm high-reflection film, and the reflectivity is greater than or equal to 99.9%; the surface of the second total reflecting mirror 19 is plated with a 1064nm high-reflection film; and a 1064nm high-reflection film is plated on the surface of the third total reflection mirror 10.
In this embodiment, a 1064nm high-reflection film is plated on the surface of the first total reflection mirror 1, and the reflectivity is greater than or equal to 99.9%; the surface of the second total reflection mirror 19 is plated with a 1064nm total reflection film; the surface of the third total reflection mirror 10 is plated with a 1064nm total reflection film; realizing high-efficiency total reflection: the surface of the total reflecting mirror adopts 1064nm high reflecting films, so that the reflectivity of the total reflecting mirror at the wavelength of 1064nm can be improved, the total reflection is more efficient, the transmission efficiency and the optical power output of an optical system are improved, the optical loss in the optical system is reduced, and the greater freedom and the greater flexibility can be brought to the design of the optical system, so that the later-stage more complex optical system and the higher-level application requirements can be realized.
In an embodiment, the optical resonator further comprises a polarizer assembly 3, and the polarizer assembly 3 is disposed in the optical path of the resonant cavity and is located between the acousto-optic Q-switch modulator 2 and the second total reflection mirror 19.
In this embodiment, since the depolarization phenomenon in the YAG optical path is serious, a polarizer assembly 3 is further disposed between the acousto-optic Q-switch modulator 2 and the second total reflection mirror 19, and the polarizer assembly 3 is disposed in the resonant cavity optical path, and the polarized light is reflected by adjusting the angle of the polarizer, so as to obtain pure polarized light.
In one embodiment, the surface of the lens of the half mirror assembly 11 is coated with 1064 high-transmittance film with a reflectivity of 80% to achieve 20% output.
In the present embodiment, the half mirror assembly 11 is capable of dividing the laser beam into two parts: one part is transmitted through the mirror surface to form an output light beam; the other part is reflected back to the resonant cavity light path in the mirror, in the half mirror assembly 11, the surface of the mirror is coated with a 1064 high-transmittance film, the reflectivity is 80%, and 20% of light output is realized, and because the reflectivity in the half mirror assembly 11 is very high, the quantity of reflected light is quite small, and therefore, more light can be output through the mirror surface by 20% of light output, so that the output power of the laser is improved.
In an embodiment, the semiconductor side pump 4 module is internally provided with a pump bar.
In this embodiment, a pumping bar is disposed inside the semiconductor pump 4 module, and the pumping bar can generate 808nm pumping light to perform stimulated radiation on the YAG crystal rod 77, so as to realize transition of energy level of the YAG crystal rod 7; the pumping bar can realize pumping under the pressurization of the module anode 5 and the module cathode 6.
In one embodiment, a water cooling channel is arranged in the semiconductor side pump 4 module.
In this embodiment, a water cooling channel is disposed in the module of the semiconductor side pump 4, and the water cooling circulation is completed through the water inlet 8 and the water outlet 9 on the surface of the module of the semiconductor side pump 4, so as to achieve the cooling and heat dissipation effects.
In one embodiment, the main frequency doubling component includes a frequency doubling crystal 13, a frequency doubling crystal 14 and a corresponding frequency doubling adjusting frame 15.
In this embodiment, the main frequency doubling component includes a frequency doubling crystal 13, a frequency tripling crystal 14, and a corresponding frequency doubling adjusting frame 15; the light beam is firstly injected into a double frequency crystal 13, the fundamental frequency light 1064 is subjected to frequency multiplication in a second harmonic mode, the phase matching angle is 90 degrees, the second type of phase matching is used, the material is lithium triborate crystal, and the size is 3X3X10; and then the light beam emitted by the frequency doubling crystal 13 is further emitted into the frequency doubling crystal 14 to finish frequency summation, when the two incident photons W1 and W2 are simultaneously combined together through three light waves with frequencies W1, W2 and W3, a second-order nonlinear effect is generated, photons with the frequency W3 are generated, wherein the frequency doubling crystal 14 is made of lithium triborate crystals, the size is 3X3X15, the phase matching angle is 90 degrees, and the two types of phases are matched.
In one embodiment, the triangular prism 17 is made of fused silica, and is coated with 355 an anti-reflection film.
In this embodiment, the material of the triangular prism 17 is fused silica, the fused silica is amorphous (glass state) of silicon oxide (quartz, silica), the fused silica provides high service temperature and low thermal expansion coefficient through three-dimensional structure cross-linking, the damage threshold of the lens can be greatly improved, when the light path passes through the triangular prism 17, three photons are generated, the wavelengths of the three photons are 1064nm, 532nm and 355nm respectively, the triangular prism 17 can separate the three photons, and the surface of the triangular prism 17 is plated with 355 antireflection film, so that 355nm light beams can be matched and transmitted, loss is avoided, and higher conversion rate is achieved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the application.

Claims (10)

1. A YAG-side pump cavity external frequency doubling ultraviolet laser, comprising:
the device comprises a full-reflecting mirror assembly, an acousto-optic Q switch modulator, a semiconductor side pump, a half-reflecting mirror assembly, a main frequency doubling assembly and a triangular prism;
a resonant cavity light path is formed between the full reflecting mirror component and the half reflecting mirror component;
the acousto-optic Q switch modulator is arranged in the resonant cavity light path;
the semiconductor side pump comprises a YAG crystal rod and is arranged in the resonant cavity light path;
the main frequency doubling component is positioned at one side of the half reflecting mirror component far away from the resonant cavity light path;
the triangular prism is arranged on one side, far away from the half reflecting mirror assembly, of the main frequency doubling assembly.
2. The YAG-side pump extra-cavity frequency doubling ultraviolet laser of claim 1, wherein the total mirror assembly comprises a first total mirror optic, a second total mirror optic, and a third total mirror optic;
the first total reflection mirror, the second total reflection mirror, the third total reflection mirror and the half reflection mirror component form Z-shaped distribution.
3. The YAG-side pump-cavity frequency doubled ultraviolet laser of claim 2, wherein the acousto-optic Q-switch modulator is located between the first and second total reflectors.
4. The YAG-side pump extra-cavity frequency doubling ultraviolet laser of claim 2, wherein the semiconductor-side pump is located between the second and third total reflectors.
5. The YAG-side pump cavity external frequency doubling ultraviolet laser according to claim 2, wherein the surface of the first total reflection mirror is plated with a 1064nm high reflection film, and the reflectivity is more than or equal to 99.9%;
the surface of the second total reflecting mirror is plated with a 1064nm high-reflection film;
and the surface of the third total reflection mirror is plated with a 1064nm high-reflection film.
6. The YAG-side pump extra-cavity frequency doubling ultraviolet laser of claim 2, further comprising a polarizer assembly placed in the resonator optical path while between the acousto-optic Q-switch modulator and the second total reflection mirror.
7. The YAG-side pump-cavity frequency doubling ultraviolet laser of claim 1, wherein a pump bar is disposed inside the semiconductor-side pump module.
8. The YAG-side pump outside cavity frequency doubling ultraviolet laser according to claim 1, wherein the half mirror assembly lens surface is plated with 1064 high-transmittance film with a reflectivity of 80% to achieve 20% output.
9. The YAG-side pump-cavity external frequency doubling ultraviolet laser of claim 1, wherein the main frequency doubling component comprises a frequency doubling crystal, a frequency tripling crystal, and a corresponding frequency doubling adjusting frame.
10. The YAG-side pump cavity external frequency doubling ultraviolet laser of claim 1, wherein the triangular prism material is fused quartz, and a surface is coated with 355 anti-reflection film.
CN202310707801.0A 2023-06-14 2023-06-14 YAG side pump cavity external frequency doubling ultraviolet laser Pending CN117117619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310707801.0A CN117117619A (en) 2023-06-14 2023-06-14 YAG side pump cavity external frequency doubling ultraviolet laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310707801.0A CN117117619A (en) 2023-06-14 2023-06-14 YAG side pump cavity external frequency doubling ultraviolet laser

Publications (1)

Publication Number Publication Date
CN117117619A true CN117117619A (en) 2023-11-24

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