CN117096243A - Forward-mounted LED chip and manufacturing method thereof - Google Patents

Forward-mounted LED chip and manufacturing method thereof Download PDF

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Publication number
CN117096243A
CN117096243A CN202311104107.6A CN202311104107A CN117096243A CN 117096243 A CN117096243 A CN 117096243A CN 202311104107 A CN202311104107 A CN 202311104107A CN 117096243 A CN117096243 A CN 117096243A
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China
Prior art keywords
layer
sub
reflecting
insulating
composite
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CN202311104107.6A
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Chinese (zh)
Inventor
张星星
周志兵
林潇雄
胡加辉
金从龙
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Priority to CN202311104107.6A priority Critical patent/CN117096243A/en
Publication of CN117096243A publication Critical patent/CN117096243A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

Abstract

The invention discloses a forward-mounted LED chip and a manufacturing method thereof, and relates to the technical field of semiconductors, the forward-mounted LED chip comprises an epitaxial wafer, a current blocking layer, a transparent conducting layer, an electrode structure and a passivation layer which are sequentially laminated on the epitaxial wafer, wherein the electrode structure comprises a composite reflecting layer, an insulating layer and a bonding pad, the composite reflecting layer and the insulating layer are arranged below the bonding pad, the composite reflecting layer comprises at least one reflecting sub-layer, the reflecting sub-layer is an Ag layer, and the insulating layer comprises SiN x The layer, through this setting, can improve the reflectivity to light, can also ensure the holistic quality of forward-mounted LED chip simultaneously.

Description

Forward-mounted LED chip and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a forward-mounted LED chip and a manufacturing method thereof.
Background
The LED chip is a solid semiconductor device, the heart of the LED is a semiconductor wafer, one end of the wafer is attached to a bracket, the other end of the wafer is a negative electrode, and the other end of the wafer is connected with the positive electrode of a power supply, so that the whole wafer is encapsulated by epoxy resin.
The traditional forward-mounted LED chip generally consists of an epitaxial structure and a chip structure, wherein the epitaxial structure comprises a substrate, an N-type semiconductor, a quantum well and a P-type semiconductor; the chip structure comprises a current blocking layer, a transparent conducting layer, an N-type electrode, a P-type electrode and a passivation layer from bottom to top in sequence; the N-type electrode consists of an N-type bonding pad and an N-type electrode strip, the N-type semiconductor is exposed through a photoetching technology and an ICP dry etching technology, and the N-type electrode is electrically connected with the N-type semiconductor; the P-type electrode consists of a P-type bonding pad and a P-type electrode strip, a current blocking layer and a transparent conducting layer are sequentially arranged below the P-type bonding pad from bottom to top, the current blocking layer below the bonding pad is designed in a digging ring, the bottom of the current blocking layer is directly contacted with the upper surface of the current blocking layer in the middle, and the lower surface of the current blocking layer is contacted with the surface of the P-type semiconductor. A circle of exposed P-type semiconductor is arranged around the periphery of the middle current blocking layer and is directly contacted with the P-type bonding pad; the outer perimeter of the P-pad is pressed against the transparent conductive layer, with the current blocking layer underlying the transparent conductive layer, and the reflection of light beneath the pad is typically reflected by the metallic aluminum in the electrode.
However, light under the bottom of the solder is reflected only by the metal aluminum in the electrode, resulting in low reflectivity to light, which in turn affects the quality of the overall front-mounted LED chip.
Disclosure of Invention
Based on the above, the invention aims to provide a forward-mounted LED chip and a manufacturing method thereof, so as to solve the problem that in the prior art, light under the bottom of a welding disk is reflected only through metal aluminum in an electrode, so that the reflectivity of the light is not high, and the overall quality of the forward-mounted LED chip is affected.
The invention provides a forward-mounted LED chip, which comprises an epitaxial wafer, a current blocking layer, a transparent conducting layer, an electrode structure and a passivation layer, wherein the current blocking layer, the transparent conducting layer, the electrode structure and the passivation layer are sequentially laminated on the epitaxial wafer;
the electrode structure comprises a composite reflecting layer, an insulating layer and a bonding pad, wherein the composite reflecting layer and the insulating layer are arranged below the bonding pad;
the composite reflecting layer comprises at least one reflecting sub-layer, and the reflecting sub-layer is an Ag layer;
the insulating layer comprises SiN x A layer.
Further, the composite reflecting layer, the insulating layer and the bonding pad are sequentially deposited on the transparent conducting layer, and one side of the bonding pad, which is away from the insulating layer, is penetrated by the passivation layer;
the insulating layer covers the outer surface of the composite reflecting layer and is in contact with one part of the surface of the transparent conducting layer, and the composite reflecting layer is deposited on the other part of the surface of the transparent conducting layer.
Further, the electrode structure further comprises a cover layer;
the insulating layer, the composite reflecting layer, the covering layer and the bonding pad are sequentially deposited on the transparent conducting layer, and one side of the bonding pad, which is away from the covering layer, is penetrated by the passivation layer;
the covering layer covers the outer surface of the composite reflecting layer and is in contact with one part of the surface of the insulating layer, and the composite reflecting layer is deposited on the other part of the surface of the insulating layer.
Further, the diameter of the composite reflecting layer is larger than or equal to the diameter of the bonding pad and smaller than the diameter of the insulating layer.
Further, the insulating layer, the composite reflecting layer and the bonding pad are sequentially deposited on the transparent conducting layer, and one side of the bonding pad, which is away from the composite reflecting layer, is penetrated by the passivation layer;
the diameter of the composite reflecting layer is smaller than that of the bonding pad, the bonding pad covers the outer surface of the composite reflecting layer and is in contact with one part of the surface of the insulating layer, and the composite reflecting layer is deposited on the other part of the surface of the insulating layer.
Further, the insulating layer comprises a first insulating sub-layer and a second insulating sub-layer, and the first insulating sub-layer is laminated on the second insulating sub-layer;
wherein the first insulating sub-layer is made of SiO 2 、Al 2 O 3 Any one of the second insulating sub-layers is the SiN x A layer of the first insulating sub-layer having a thickness ofThe thickness of the second insulating sub-layer is
Further, the composite reflective layer comprises a first reflective sub-layer, wherein the first reflective sub-layer is an Ag layer, and the thickness of the first reflective sub-layer is
Further, the composite reflective layer further comprises a second reflective sub-layer, the first reflective sub-layer being layered over the second reflective sub-layer;
wherein the material of the second reflecting sub-layer is any one of Ni, ti and Cr, and the thickness of the second reflecting sub-layer is
Further, the composite reflective layer further comprises a second reflective sub-layer and a third reflective sub-layer;
the first reflecting sub-layer is smaller than the second reflecting sub-layer in size, the first reflecting sub-layer is stacked on the second reflecting sub-layer, the third reflecting sub-layer covers the outer surface of the first reflecting sub-layer and is in contact with part of the surface of the second reflecting sub-layer, and the other part of the surface of the second reflecting sub-layer is stacked with the first reflecting sub-layer;
the second reflecting sub-layer is made of any one of Ni, ti and Cr, and has a thickness ofAnd the material of the third reflecting sublayer is any one of Ni, ti and Pt.
Another aspect of the present invention provides a method for manufacturing a front-mounted LED chip, for manufacturing the front-mounted LED chip, including:
providing an epitaxial wafer;
sequentially depositing a current blocking layer, a transparent conducting layer, an electrode structure and a passivation layer on the epitaxial wafer;
the electrode structure comprises a composite reflecting layer, an insulating layer and a bonding pad; wherein the composite reflecting layer comprises at least one reflecting sub-layer, one reflecting sub-layer is an Ag layer, and the insulating layer comprises SiN x A layer.
Compared with the prior art, the invention has the beneficial effects that:
in the forward-mounted LED chip provided by the invention, the composite reflecting layer is added in the electrode structure of the LED chip, the composite reflecting layer comprises at least one reflecting sublayer, the reflecting sublayer is an Ag layer, and the Ag is used for reflecting light under the bonding pad, so that the reflectivity of the light can be improved, specifically, the electrode structure comprises the composite reflecting layer, an insulating layer and the bonding pad, the composite reflecting layer and the insulating layer are arranged under the bonding pad, and the insulating layer comprises SiN x A layer of SiN is used as one of the insulating layers x The insulating material can prevent Ag oxygen absorption migration caused by the contact of the Ag layer in the composite reflecting layer with oxygen, and ensure the overall quality of the forward-mounted LED chip on the premise of improving the reflectivity.
Drawings
Fig. 1 is a schematic structural diagram of a front-mounted LED chip according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a first composite reflective layer according to a first embodiment of the invention;
FIG. 3 is a schematic diagram of a second composite reflective layer according to a first embodiment of the invention;
FIG. 4 is a schematic structural diagram of a third composite reflective layer according to a first embodiment of the present invention;
FIG. 5 is a schematic view of an insulating layer according to a first embodiment of the present invention;
fig. 6 is a schematic structural diagram of a front-mounted LED chip according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of a front-mounted LED chip according to a third embodiment of the present invention;
FIG. 8 is a top view of an LED chip in the method of manufacturing a front-mounted LED chip of the present invention;
fig. 9 is a schematic side view of an LED chip in the method of manufacturing a front-mounted LED chip according to the present invention.
In the figure: 100. a substrate; 200. an N-type semiconductor layer; 300. a quantum well layer; 400. a P-type semiconductor layer; 500. a current blocking layer; 600. a transparent conductive layer; 700. an electrode structure; 710. a composite reflective layer; 711. a first reflective sub-layer; 712. a second reflective sub-layer; 713. a third reflective sub-layer; 720. an insulating layer; 721. a first insulating sub-layer; 722. a second insulating sub-layer; 730. a bonding pad; 731. a P-type bonding pad; 732. an N-type bonding pad; 740. a cover layer; 750. a P-type electrode strip; 760. an N-type electrode bar; 800. and a passivation layer.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Furthermore, the term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. In the detailed description and claims, a list of items connected by the term "one of" may mean any of the listed items. For example, if items a and B are listed, the phrase "one of a and B" means either only a or only B. In another example, if items A, B and C are listed, one of the phrases "A, B and C" means only a; only B; or only C. Item a may comprise a single element or multiple elements. Item B may comprise a single element or multiple elements. Item C may comprise a single element or multiple elements. In the detailed description and claims, a list of items connected by the terms "at least one of," "at least one of," or other similar terms may mean any combination of the listed items. For example, if items a and B are listed, the phrase "at least one of a and B" or "at least one of a or B" means only a; only B; or A and B. In another example, if items A, B and C are listed, the phrase "one less of A, B and C" or "one less of A, B or C" means only a; or only B; only C; a and B (excluding C); a and C (excluding B); b and instruction 4C (excluding a); or A, B and C. Item a may comprise a single element or multiple elements. Item B may comprise a single element or multiple elements. Item C may comprise a single element or multiple elements.
Referring to fig. 1 to 9, a first aspect of the present invention provides a front-mounted LED chip, which includes an epitaxial wafer, a current blocking layer 500, a transparent conductive layer 600, an electrode structure 700 and a passivation layer 800 sequentially stacked on the epitaxial wafer, wherein in an alternative embodiment, the epitaxial wafer specifically includes a substrate 100, and an N-type semiconductor layer 200, a quantum well layer 300 and a P-type semiconductor layer 400 sequentially stacked on the substrate 100, and the current blocking layer 500 is stacked on the P-type semiconductor layer 400;
the electrode structure 700 includes a composite reflective layer 710, an insulating layer 720, and a pad 730, where the composite reflective layer 710 and the insulating layer 720 are disposed under the pad 730;
the composite reflective layer 710 includes at least one reflective sub-layer, which is an Ag layer;
insulating layer 720 includes SiN x A layer.
Further, the composite reflective layer 710, the insulating layer 720 and the bonding pad 730 are sequentially deposited on the transparent conductive layer 600, and the passivation layer 800 is penetrated on one side of the bonding pad 730 away from the insulating layer 720;
wherein, the insulating layer 720 covers the outer surface of the composite reflective layer 710 and contacts with a part of the surface of the transparent conductive layer 600, and another part of the surface of the transparent conductive layer 600 is deposited with the composite reflective layer 710.
Further, the electrode structure 700 further includes a cover layer;
the insulating layer 720, the composite reflective layer 710, the cover layer, and the bonding pad 730 are sequentially deposited on the transparent conductive layer 600, and the passivation layer 800 is penetrated on one side of the bonding pad 730 away from the cover layer;
wherein, the cover layer covers the outer surface of the composite reflective layer 710 and contacts with a part of the surface of the insulating layer 720, and another part of the surface of the insulating layer 720 is deposited with the composite reflective layer 710.
Further, the composite reflective layer 710 has a diameter greater than or equal to the diameter of the pads 730 and less than the diameter of the insulating layer 720.
Further, the insulating layer 720, the composite reflective layer 710 and the bonding pad 730 are sequentially deposited on the transparent conductive layer 600, and the passivation layer 800 is penetrated on one side of the bonding pad 730 away from the composite reflective layer 710;
wherein, the diameter of the composite reflective layer 710 is smaller than the diameter of the bonding pad 730, the bonding pad 730 covers the outer surface of the composite reflective layer 710 and contacts with a part of the surface of the insulating layer 720, and the composite reflective layer 710 is deposited on the other part of the surface of the insulating layer 720.
Further, the insulating layer 720 includes a first insulating sub-layer 721 and a second insulating sub-layer 722, and the first insulating sub-layer 721 is stacked over the second insulating sub-layer 722;
wherein the first insulator layer 721 is made of SiO 2 、Al 2 O 3 Any one of the second insulator layers 722 is SiN x The thickness of the first insulating sub-layer 721 isThe second insulator layer 722 has a thickness of
Further, the composite reflective layer 710 includes a first reflective sub-layer 711, the first reflective sub-layer 711 being an Ag layer, the first reflective sub-layer 711 having a thickness of
Further, the composite reflective layer 710 further includes a second reflective sub-layer 712, the first reflective sub-layer 711 being laminated over the second reflective sub-layer 712;
wherein the material of the second reflective sub-layer 712 is any one of Ni, ti, and Cr, and the thickness of the second reflective sub-layer 712 is
Further, the composite reflective layer 710 further includes a second reflective sub-layer 712 and a third reflective sub-layer 713;
wherein the size of the first reflective sub-layer 711 is smaller than that of the second reflective sub-layer 712, the first reflective sub-layer 711 is stacked on the second reflective sub-layer 712, and the third reflective sub-layer 713 covers the outer surface of the first reflective sub-layer 711 and contacts with a part of the surface of the second reflective sub-layer 712, and the other part of the surface of the second reflective sub-layer 712 stacks the first reflective sub-layer 711;
the second reflective sub-layer 712 is made of any one of Ni, ti, and Cr, and the second reflective sub-layer 712 has a thickness ofThe material of the third reflective sub-layer 713 is any one of Ni, ti, pt.
The second aspect of the present invention provides a method for manufacturing a front-mounted LED chip, where the manufacturing method is used for manufacturing the front-mounted LED chip, and the manufacturing method includes:
providing an epitaxial wafer;
sequentially depositing a current blocking layer 500, a transparent conductive layer 600, an electrode structure 700, and a passivation layer 800 on the epitaxial wafer;
the electrode structure 700 includes a composite reflective layer 710, an insulating layer 720, and a pad 730; wherein the composite reflective layer 710 includes at least one reflective sub-layer, one of which is an Ag layer, and the insulating layer 720 includes SiN x A layer.
It should be noted that, in some practical cases, the epitaxial wafer in the above-mentioned forward-mounted LED chip includes a substrate 100, an N-type semiconductor layer 200, a quantum well layer 300, a P-type semiconductor layer 400, and an electrode structure including an N-type pad and an N-type electrode bar 732; referring to fig. 8 and 9, the method for manufacturing the front-mounted LED chip specifically includes steps S10-S90:
specifically, the method includes steps S10 to S90:
s10: a substrate 100 is provided, and an N-type semiconductor layer 200, a quantum well layer 300, and a P-type semiconductor layer 400 are sequentially deposited on the substrate 100.
S20: the N-type semiconductor at the N-type electrode strips 732 is exposed by photolithography and ICP etching techniques.
S30: deposition of SiO by PECVD 2 A material of thickness ofThe current blocking layer 500 is further fabricated by photolithography and wet etching techniques at a temperature of 300 c, as shown in fig. 2, with the current blocking layer 500 under the P-electrode strips 760.
S40: coating a layer of transparent conductive layer 600 material, which can be ITO material, with thickness ofThe transparent conductive layer 600 is fabricated by photolithography and etching techniques.
S50: the composite reflective layer 710 is coated by photolithography and metal coating equipment.
S60: depositing a layer of SiNx material by PECVD or ALD equipment with the thickness of
S70: followed by deposition of a layer of Al by an ALD apparatus 2 O 3 A material of thickness ofThe insulating layer 720 is fabricated by photolithography and wet etching techniques.
S80: the metal electrode is coated by using an E-gun metal coating apparatus in combination with a photolithography technique to manufacture a P-type electrode (including P-type pad 731 and P-type electrode bar 750) and an N-type electrode (including N-type pad 732 and N-type electrode bar 760).
S90: on the basis of the above structure, a passivation layer 800 is deposited, and the passivation layer 800 is fabricated by photolithography and etching techniques.
First embodiment
Referring to fig. 1 to 5, a front-loading LED chip according to a first embodiment of the present invention includes an epitaxial wafer, a current blocking layer 500, a transparent conductive layer 600, an electrode structure 700 and a passivation layer 800 sequentially stacked on the epitaxial wafer, wherein in an alternative embodiment, the epitaxial wafer specifically includes a substrate 100, an N-type semiconductor layer 200, a quantum well layer 300 and a P-type semiconductor layer 400 sequentially stacked on the substrate 100, and the current blocking layer 500 is stacked on the P-type semiconductor layer 400;
the electrode structure 700 includes a composite reflective layer 710, an insulating layer 720, and a pad 730, where the composite reflective layer 710 and the insulating layer 720 are disposed under the pad 730;
the composite reflective layer 710 includes at least one reflective sub-layer, which is an Ag layer;
insulating layer 720 includes SiN x A layer.
Specifically, in the present embodiment, the composite reflective layer 710, the insulating layer 720 and the bonding pad 730 are sequentially deposited on the transparent conductive layer 600, and the passivation layer 800 is disposed on the side of the bonding pad 730 facing away from the insulating layer 720;
wherein, the insulating layer 720 covers the outer surface of the composite reflective layer 710 and contacts with a part of the surface of the transparent conductive layer 600, and another part of the surface of the transparent conductive layer 600 is deposited with the composite reflective layer 710.
By way of example and not limitation, in some preferred embodiments, the composite reflective layer 710 can be comprised of three structures;
referring to fig. 2, a first structure is as follows: the composite reflective layer 710 includes a first reflective sub-layer 711, the first reflective sub-layer 711 being an Ag layer, the first reflective sub-layer 711 having a thickness of
Referring to fig. 3, a second structure is shown: the composite reflective layer 710 further includes a second reflective sub-layer 712, the first reflective sub-layer 711 being laminated over the second reflective sub-layer 712;
wherein the material of the second reflective sub-layer 712 is any one of Ni, ti, and Cr, and the thickness of the second reflective sub-layer 712 is
Referring to fig. 4, a third structure is shown: the composite reflective layer 710 also includes a second reflective sub-layer 712 and a third reflective sub-layer 713;
wherein the size of the first reflective sub-layer 711 is smaller than that of the second reflective sub-layer 712, the first reflective sub-layer 711 is stacked on the second reflective sub-layer 712, and the third reflective sub-layer 713 covers the outer surface of the first reflective sub-layer 711 and contacts with a part of the surface of the second reflective sub-layer 712, and the other part of the surface of the second reflective sub-layer 712 stacks the first reflective sub-layer 711;
the second reflective sub-layer 712 is made of any one of Ni, ti and Cr, and the thickness of the second reflective sub-layer 712 isThe material of the third reflective sub-layer 713 is any one of Ni, ti, pt.
It should be noted that, in the present embodiment, the composite reflective layer 710 may have one of three structures, and the three types of composite reflective layers 710 have different light reflection effects, and referring to table one, the following is the reflectance data of the three types of composite reflective layers 710 in actual situations.
List one
As can be seen from the above table one, in the first structure, the composite reflective layer 710 is composed of one first reflective sub-layer 711, and the first reflective sub-layer 711 is an Ag layer, that is, the light under the pad 730 is reflected by the Ag layer, so that the reflectivity is the highest and the brightness is the highest.
In the second structure, by adding the second reflective sub-layer 712, the second reflective sub-layer 712 is now Cr, and the Cr material is used as the contact layer under the Ag, so that the anomaly of tearing is greatly reduced, but the reflectivity is reduced, the brightness is lower, the tearing is easy to generate relative to the Ag layer in the first structure, and the Ag metal material is easy to migrate and generate black spots in the actual situation.
In the third structure, the third reflective sub-layer 713 is added, and the third reflective sub-layer 713 is used to cover the first reflective sub-layer 711, so that Ag migration can be reduced, the problem of dark spots in appearance can be greatly improved, and the dark spots can be reduced, so that light absorption can be reduced, and brightness can be improved.
In addition, referring to fig. 5, in some preferred embodiments, the insulating layer 720 includes a first insulating sub-layer 721 and a second insulating sub-layer 722, and the first insulating sub-layer 721 is stacked on the second insulating sub-layer 722;
wherein the first insulator layer 721 is made of SiO 2 、Al 2 O 3 Any one of the second insulator layers 722 is SiN x The thickness of the first insulating sub-layer 721 isThe second insulator layer 722 has a thickness ofIn practical cases, the second insulator layer 722 is SiN x The second insulating sub-layer 722 may be deposited by PECVD or ALD, by way of example and not limitation, so that Ag oxygen gettering migration of Ag in the composite reflective layer 710 due to contact with oxygen element may be avoided, and the stability of the deposited insulating layer 720 may be ensured by using the crystalline insulating material with high strength and high hardness, i.e., the first insulating sub-layer 721, as the upper layer.
In summary, compared with the LED chip in the prior art, the forward-mounted LED chip in the embodiment of the invention has at least the following beneficial effects:
in the forward-mounted LED chip provided by the present invention, the composite reflective layer 710 is added in the electrode structure 700 of the LED chip, the composite reflective layer 710 includes at least one reflective sub-layer, and the reflective sub-layer is Ag layer, and the Ag reflects the light under the solder pad 730, so as to improve the reflectivity of the light, specifically, the electrode structure 700 includes the composite reflective layer 710, the insulating layer 720 and the solder pad 730, the composite reflective layer 710 and the insulating layer 720 are disposed under the solder pad 730, and the insulating layer 720 includes SiN x A layer of SiN is used as one of the insulating layers 720 x The insulating material can prevent Ag oxygen absorption migration caused by the contact of the Ag layer in the composite reflecting layer 710 with oxygen, and ensure the overall quality of the forward-mounted LED chip on the premise of improving the reflectivity.
Second embodiment
Referring to fig. 6, a front-mounted LED chip according to a second embodiment of the present invention is different from the front-mounted LED chip according to the first embodiment in that:
in this embodiment, the electrode structure 700 further includes a cover layer 740;
the insulating layer 720, the composite reflective layer 710, the cover layer 740 and the bonding pad 730 are sequentially deposited on the transparent conductive layer 600, and the passivation layer 800 is penetrated on one side of the bonding pad 730 away from the cover layer 740;
wherein, the cover layer 740 covers the outer surface of the composite reflective layer 710 and contacts with a part of the surface of the insulating layer 720, and another part of the surface of the insulating layer 720 is deposited with the composite reflective layer 710.
Further, the composite reflective layer 710 has a diameter greater than/equal to the diameter of the pads 730, less than the diameter of the insulating layer 720, and the same conditions apply.
Note that, in this embodiment, the cover layer 740 may be made of SiN x An insulating material and deposited by PECVD or ALD and having a thickness ofBy adding a cover layer 740, and the cover layer 740 is opposite to the composite reflecting layerThe outer surface of the composite reflective layer 710 is covered, so that Ag oxygen absorption migration caused by Ag contacting with oxygen element in the composite reflective layer 710 can be further avoided, and the reflective area can be increased and the reflectivity to light can be increased by using the diameter of the composite reflective layer 710 larger than/equal to the diameter of the bonding pad 730 and smaller than the diameter of the insulating layer 720.
In summary, the forward-mounted LED chip in the second embodiment of the present invention has at least the following advantages compared with the forward-mounted LED chip in the first embodiment:
the electrode structure 700 in this embodiment is added with the cover layer 740, and the cover layer 740 covers the outer surface of the composite reflective layer 710, so that Ag in the composite reflective layer 710 can be further prevented from contacting oxygen element to generate Ag oxygen absorption migration, and meanwhile, by limiting the size of the composite reflective layer 710, the reflective area can be increased, and the reflectivity of light can be increased.
Third embodiment
Referring to fig. 7, a front-mounted LED chip according to a third embodiment of the present invention is different from the front-mounted LED chip according to the first embodiment in that:
in this embodiment, the insulating layer 720, the composite reflective layer 710 and the bonding pad 730 are sequentially deposited on the transparent conductive layer 600, and the passivation layer 800 is disposed on the side of the bonding pad 730 facing away from the composite reflective layer 710;
the diameter of the composite reflective layer 710 is smaller than that of the bonding pad 730, the bonding pad 730 covers the outer surface of the composite reflective layer 710 and contacts with a part of the surface of the insulating layer 720, and the composite reflective layer 710 is deposited on the other part of the surface of the insulating layer 720 under the same conditions.
In actual practice, the position and the size of the composite reflective layer 710 are constrained, so that the metal in the composite reflective layer 710 can be directly contacted with the bonding pad 730, the connection stability of the two can be ensured, the bonding pad 730 is made of a metal material, and the bonding pad 730 covers the outer surface of the composite reflective layer 710, so that the connection stability of the two can be ensured from multiple directions.
In summary, the forward-mounted LED chip in the third embodiment of the present invention has at least the following advantages compared with the forward-mounted LED chip in the first embodiment:
in this embodiment, the position and size of the composite reflective layer 710 are defined, so that the metal in the composite reflective layer 710 can be directly contacted with the pad 730, and the stability of the connection between the two can be ensured.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1. The forward-mounted LED chip is characterized by comprising an epitaxial wafer, a current blocking layer, a transparent conducting layer, an electrode structure and a passivation layer, wherein the current blocking layer, the transparent conducting layer, the electrode structure and the passivation layer are sequentially laminated on the epitaxial wafer;
the electrode structure comprises a composite reflecting layer, an insulating layer and a bonding pad, wherein the composite reflecting layer and the insulating layer are arranged below the bonding pad;
the composite reflecting layer comprises at least one reflecting sub-layer, and the reflecting sub-layer is an Ag layer;
the insulating layer comprises SiN x A layer.
2. The front-mounted LED chip of claim 1, wherein the composite reflective layer, the insulating layer, and the bonding pad are sequentially deposited on the transparent conductive layer, and the passivation layer is disposed through a side of the bonding pad facing away from the insulating layer;
the insulating layer covers the outer surface of the composite reflecting layer and is in contact with one part of the surface of the transparent conducting layer, and the composite reflecting layer is deposited on the other part of the surface of the transparent conducting layer.
3. The front-mounted LED chip of claim 1, wherein the electrode structure further comprises a cover layer;
the insulating layer, the composite reflecting layer, the covering layer and the bonding pad are sequentially deposited on the transparent conducting layer, and one side of the bonding pad, which is away from the covering layer, is penetrated by the passivation layer;
the covering layer covers the outer surface of the composite reflecting layer and is in contact with one part of the surface of the insulating layer, and the composite reflecting layer is deposited on the other part of the surface of the insulating layer.
4. The front-mounted LED chip of claim 3, wherein the composite reflective layer has a diameter greater than or equal to the diameter of the bonding pad and less than the diameter of the insulating layer.
5. The front-mounted LED chip of claim 1, wherein the insulating layer, the composite reflective layer, and the bonding pad are sequentially deposited on the transparent conductive layer, and the passivation layer is disposed through a side of the bonding pad facing away from the composite reflective layer;
the diameter of the composite reflecting layer is smaller than that of the bonding pad, the bonding pad covers the outer surface of the composite reflecting layer and is in contact with one part of the surface of the insulating layer, and the composite reflecting layer is deposited on the other part of the surface of the insulating layer.
6. The front-mounted LED chip of claim 1, wherein the insulating layer comprises a first insulating sub-layer and a second insulating sub-layer, the first insulating sub-layer being layered over the second insulating sub-layer;
wherein the first insulating sub-layer is made of SiO 2 、Al 2 O 3 Any one of the second insulating sub-layers is the SiN x A layer of the first insulating sub-layer having a thickness ofThe thickness of the second insulating sub-layer is
7. The front-mounted LED chip of any of claims 1-6, wherein the composite reflective layer comprises a first reflective sub-layer, the first reflective sub-layer being an Ag layer, the first reflective sub-layer having a thickness of
8. The front-mounted LED chip of claim 7, wherein the composite reflective layer further comprises a second reflective sub-layer, the first reflective sub-layer being layered over the second reflective sub-layer;
wherein the material of the second reflecting sub-layer is any one of Ni, ti and Cr, and the thickness of the second reflecting sub-layer is
9. The front-mounted LED chip of claim 7, wherein the composite reflective layer further comprises a second reflective sub-layer and a third reflective sub-layer;
the first reflecting sub-layer is smaller than the second reflecting sub-layer in size, the first reflecting sub-layer is stacked on the second reflecting sub-layer, the third reflecting sub-layer covers the outer surface of the first reflecting sub-layer and is in contact with part of the surface of the second reflecting sub-layer, and the other part of the surface of the second reflecting sub-layer is stacked with the first reflecting sub-layer;
the second reflecting sub-layer is made of any one of Ni, ti and Cr, and has a thickness ofAnd the material of the third reflecting sublayer is any one of Ni, ti and Pt.
10. A method for manufacturing a front-mounted LED chip, for manufacturing a front-mounted LED chip according to any one of claims 1 to 9, comprising:
providing an epitaxial wafer;
sequentially depositing a current blocking layer, a transparent conducting layer, an electrode structure and a passivation layer on the epitaxial wafer;
the electrode structure comprises a composite reflecting layer, an insulating layer and a bonding pad, wherein the composite reflecting layer comprises at least one reflecting sub-layer, the reflecting sub-layer is an Ag layer, and the insulating layer comprises SiN x A layer.
CN202311104107.6A 2023-08-30 2023-08-30 Forward-mounted LED chip and manufacturing method thereof Pending CN117096243A (en)

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CN202311104107.6A CN117096243A (en) 2023-08-30 2023-08-30 Forward-mounted LED chip and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311104107.6A CN117096243A (en) 2023-08-30 2023-08-30 Forward-mounted LED chip and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN117096243A true CN117096243A (en) 2023-11-21

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Family Applications (1)

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