CN117083529A - Temperature control device and method - Google Patents

Temperature control device and method Download PDF

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CN117083529A
CN117083529A CN202180096226.4A CN202180096226A CN117083529A CN 117083529 A CN117083529 A CN 117083529A CN 202180096226 A CN202180096226 A CN 202180096226A CN 117083529 A CN117083529 A CN 117083529A
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vector
measured
power
under test
temperature
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王海峰
黄俊林
康文红
钟进国
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Huawei Technologies Co Ltd
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    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere

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Abstract

A temperature control device, comprising: a processor (110) and a temperature compensation device (120); the processor (110) is configured to input a target operating frequency of a vector to be tested and the vector to be tested into the chip to be tested (130), and control a junction temperature of the chip to be tested (130) by controlling the temperature compensation device (120) in a process that the chip to be tested (130) executes the vector to be tested at the target operating frequency. And the temperature compensation device (120) is used for compensating the junction temperature of the chip (130) to be tested. The target operating frequency is determined based on a reference power, which is used to indicate a fluctuating basis for the power of the vector under test, the vector under test being any one of a plurality of test vectors for the chip under test (130). The difficulty in controlling the junction temperature of the chip (130) to be tested is reduced.

Description

温度控制装置和方法Temperature control device and method 技术领域Technical field

本申请涉及温度控制技术领域,具体涉及一种温度控制装置和方法。The present application relates to the technical field of temperature control, and specifically to a temperature control device and method.

背景技术Background technique

芯片在出厂之前,需根据要求进行测试,例如,Burn-in测试和ATE(Automatic Test Equipment、自动化测试设备)测试等,以确保出厂的芯片没有质量问题。Before the chip leaves the factory, it needs to be tested according to requirements, such as Burn-in test and ATE (Automatic Test Equipment, automated test equipment) test, etc., to ensure that there are no quality problems in the chip shipped from the factory.

在芯片测试过程中,需对芯片的结温进行控制。例如,控制芯片的结温不超过芯片的不可逆失效温度,以避免由于芯片的结温超过不可逆失效温度,而对芯片产生不可逆的损伤。再例如,将芯片的结温控制在能够暴露芯片薄弱点的温度,能够暴露芯片薄弱点的温度不超过芯片的不可逆失效温度,这样,能够在不对芯片造成不可逆的损伤的基础上,有效的筛选出缺陷芯片。During the chip testing process, the junction temperature of the chip needs to be controlled. For example, the junction temperature of the chip is controlled not to exceed the irreversible failure temperature of the chip to avoid irreversible damage to the chip due to the junction temperature of the chip exceeding the irreversible failure temperature. For another example, the junction temperature of the chip is controlled to a temperature that can expose the weak points of the chip. The temperature that can expose the weak points of the chip does not exceed the irreversible failure temperature of the chip. In this way, it can effectively screen without causing irreversible damage to the chip. Defective chip.

随着科技的发展,芯片的功耗越来越大。针对大功耗芯片,不同测试向量之间的功耗存在较大差异。由于芯片在执行测试向量时,会产生热量,且产生的热量与测试向量的功耗呈正相关关系。因此,在芯片在功耗差异较大的测试向量之间切换时,会产生较大的热量波动,增加了芯片结温的控制难度。With the development of technology, the power consumption of chips is increasing. For high-power consumption chips, there are large differences in power consumption between different test vectors. When the chip executes the test vector, it will generate heat, and the heat generated is positively correlated with the power consumption of the test vector. Therefore, when the chip switches between test vectors with large differences in power consumption, large heat fluctuations will occur, making it more difficult to control the chip junction temperature.

发明内容Contents of the invention

本申请提供了一种温度控制方法和装置,用于降低芯片结温的控制难度。This application provides a temperature control method and device for reducing the difficulty of controlling chip junction temperature.

第一方面,本申请提供一种温度控制方法,包括:将待测向量的目标运行频率和所述待测向量输入待测芯片;在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,通过控制温度补偿装置,对所述待测芯片的结温进行控制;其中,所述目标运行频率根据参考功率确定,所述待测向量为所述待测芯片的多个测试向量中的任一个,所述参考功率用于指示所述待测向量的功率的波动基准。In a first aspect, the present application provides a temperature control method, which includes: inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested; and executing the process at the target operating frequency of the chip under test. During the process of measuring the vector, the junction temperature of the chip under test is controlled by controlling the temperature compensation device; wherein, the target operating frequency is determined based on the reference power, and the vector to be measured is the multiple of the chip under test. Any one of the test vectors, the reference power is used to indicate the fluctuation standard of the power of the vector to be measured.

待测向量的目标运行频率根据参考功率确定,参考功率用于指示待测向量的功率的波动基准,即,以参考功率作为基准确定待测向量的目标运行频率,以将待测向量的功率限定在以参考功率作为基准的范围内,从而将待测向量的功耗限定在一定范围内,降低了不同待测向量间的功耗差异,进而降低了待测芯片在不同待测向量间切换时,产生的热量波动,从而降低了待测芯片结温的控制难度。The target operating frequency of the vector to be measured is determined based on the reference power. The reference power is used to indicate the fluctuation baseline of the power of the vector to be measured. That is, the target operating frequency of the vector to be measured is determined based on the reference power to limit the power of the vector to be measured. Within the range based on the reference power, the power consumption of the vector to be measured is limited to a certain range, reducing the power consumption difference between different vectors to be measured, thereby reducing the time required for the chip under test to switch between different vectors to be measured. , the generated heat fluctuations reduce the difficulty of controlling the junction temperature of the chip under test.

在一种可能的实现方式中,所述对所述待测芯片的结温进行控制包括:将所述待测芯片的结温控制在目标温度之下;其中,所述目标温度根据所述待测向量所属的测试项目确定。In a possible implementation, the controlling the junction temperature of the chip under test includes: controlling the junction temperature of the chip under test below a target temperature; wherein the target temperature is determined according to the The test item to which the measurement vector belongs is determined.

在一种可能的实现方式中,若所述待测向量的默认功率小于或等于所述参考功率,则所述目标运行频率为所述待测向量的默认运行频率;若所述待测向量的默认功率大于所述参考功率,则所述目标运行频率为所述待测向量的可运行频率范围中最小的运行频率;其 中,所述待测向量的默认功率为所述待测向量在所述默认运行频率下的功率,所述待测向量的默认运行频率为所述待测向量的可运行频率范围中的一个运行频率。In a possible implementation, if the default power of the vector to be measured is less than or equal to the reference power, the target operating frequency is the default operating frequency of the vector to be measured; if the default power of the vector to be measured is If the default power is greater than the reference power, then the target operating frequency is the smallest operating frequency in the operable frequency range of the vector to be measured; wherein, the default power of the vector to be measured is the vector to be measured in the The power at the default operating frequency. The default operating frequency of the vector to be measured is an operating frequency in the operable frequency range of the vector to be measured.

在一种可能的实现方式中,所述温度补偿装置包括降温装置;所述将待测向量的目标运行频率和所述待测向量输入待测芯片包括:若所述待测向量在所述目标运行频率下的功率大于所述参考功率,则增加的所述降温装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;若所述待测向量在所述目标运行频率下的功率小于或者等于所述参考功率,则将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片。In a possible implementation, the temperature compensation device includes a cooling device; inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be measured includes: if the vector to be measured is in the target If the power at the operating frequency is greater than the reference power, increase the power of the cooling device, and input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested; if the vector to be measured is If the power of the measured vector at the target operating frequency is less than or equal to the reference power, then the target operating frequency of the vector to be measured and the vector to be measured are input to the chip to be measured.

在一种可能的实现方式中,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个。In a possible implementation, the reference power is the power of a reference vector, and the reference vector is one of multiple test vectors of the chip under test.

在一种可能的实现方式中,所述对所述待测芯片的结温进行控制包括:将所述待测芯片的结温维持在目标温度;其中,所述目标温度根据所述待测向量所属的测试项目确定。In a possible implementation, the controlling the junction temperature of the chip under test includes: maintaining the junction temperature of the chip under test at a target temperature; wherein the target temperature is determined according to the vector under test The test project to which it belongs is determined.

在一种可能的实现方式中,所述目标运行频率为所述待测向量的可运行频率范围中的第一运行频率;其中,所述待测向量在所述第一运行频率下的功率最接近所述参考功率。In a possible implementation, the target operating frequency is the first operating frequency in the operable frequency range of the vector to be measured; wherein the power of the vector to be measured at the first operating frequency is the highest. close to the reference power.

在一种可能的实现方式中,所述温度补偿装置包括加热装置;所述将待测向量的目标运行频率和所述待测向量输入待测芯片包括:设置所述加热装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;其中,所述加热装置的功率根据所述待测向量在所述目标运行频率下的功率和总功率确定;所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。In a possible implementation, the temperature compensation device includes a heating device; inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be measured includes: setting the power of the heating device, and, The target operating frequency of the vector to be measured and the vector to be measured are input into the chip to be measured; wherein the power of the heating device is determined based on the power and total power of the vector to be measured at the target operating frequency. ; The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature.

在一种可能的实现方式中,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个;或者所述参考功率为总功率,其中,所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。In a possible implementation, the reference power is the power of a reference vector, and the reference vector is one of multiple test vectors of the chip under test; or the reference power is the total power, where The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature.

在一种可能的实现方式中,所述通过控制温度补偿装置,对所述待测芯片的结温进行控制包括:从与所述待测芯片的封装体接触的至少一个温度传感器中获得所述待测芯片的壳温;根据所述待测芯片的壳温,并通过控制温度补偿装置,对所述待测芯片的结温进行控制;或者从所述待测芯片中的至少一个温度传感器中获得所述待测芯片的结温;根据所述待测芯片的结温,并通过控制温度补偿装置,对所述待测芯片的结温进行控制。In a possible implementation, controlling the junction temperature of the chip under test by controlling the temperature compensation device includes: obtaining the temperature sensor from at least one temperature sensor in contact with the package of the chip under test. The shell temperature of the chip under test; controlling the junction temperature of the chip under test according to the shell temperature of the chip under test and by controlling the temperature compensation device; or from at least one temperature sensor in the chip under test Obtain the junction temperature of the chip under test; control the junction temperature of the chip under test according to the junction temperature of the chip under test and by controlling the temperature compensation device.

第二方面,本申请提供一种温度控制装置,包括:处理器和温度补偿装置;其中,所述处理器,用于将待测向量的目标运行频率和所述待测向量输入待测芯片,以及,在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,通过控制温度补偿装置,对所述待测芯片的结温进行控制;所述温度补偿装置,用于对所述待测芯片的结温进行补偿;所述目标运行频率根据参考功率确定,所述待测向量为所述待测芯片的多个测试向量中的任一个,所述参考功率用于指示所述待测向量的功率的波动基准。In a second aspect, this application provides a temperature control device, including: a processor and a temperature compensation device; wherein the processor is used to input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested, And, in the process of the chip under test executing the vector under test at the target operating frequency, the junction temperature of the chip under test is controlled by controlling a temperature compensation device; the temperature compensation device is used To compensate the junction temperature of the chip under test; the target operating frequency is determined according to the reference power, the vector to be measured is any one of multiple test vectors of the chip under test, and the reference power is used for Indicates the fluctuation reference of the power of the vector to be measured.

在一种可能的实现方式中,所述处理器具体用于将所述待测芯片的结温控制在目标温度之下;其中,所述目标温度根据所述待测向量所属的测试项目确定。In a possible implementation, the processor is specifically configured to control the junction temperature of the chip under test below a target temperature; wherein the target temperature is determined according to the test item to which the vector under test belongs.

在一种可能的实现方式中,若所述待测向量的默认功率小于或等于所述参考功率,则所述目标运行频率为所述待测向量的默认运行频率;若所述待测向量的默认功率大于所述 参考功率,则所述目标运行频率为所述待测向量的可运行频率范围中最小的运行频率;其中,所述待测向量的默认功率为所述待测向量在所述默认运行频率下的功率,所述待测向量的默认运行频率为所述待测向量的可运行频率范围中的一个运行频率。In a possible implementation, if the default power of the vector to be measured is less than or equal to the reference power, the target operating frequency is the default operating frequency of the vector to be measured; if the default power of the vector to be measured is If the default power is greater than the reference power, then the target operating frequency is the smallest operating frequency in the operable frequency range of the vector to be measured; wherein, the default power of the vector to be measured is the vector to be measured in the The power at the default operating frequency. The default operating frequency of the vector to be measured is an operating frequency in the operable frequency range of the vector to be measured.

在一种可能的实现方式中,所述温度补偿装置包括降温装置;所述处理器,具体用于若所述待测向量在所述目标运行频率下的功率大于所述参考功率,则增加的所述降温装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;若所述待测向量在所述目标运行频率下的功率小于或者等于所述参考功率,则将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片。In a possible implementation, the temperature compensation device includes a cooling device; the processor is specifically configured to increase the power of the vector to be measured at the target operating frequency if it is greater than the reference power. The power of the cooling device, and inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be measured; if the power of the vector to be measured at the target operating frequency is less than or equal to The reference power is input to the chip under test, the target operating frequency of the vector to be measured and the vector to be measured.

在一种可能的实现方式中,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个。In a possible implementation, the reference power is the power of a reference vector, and the reference vector is one of multiple test vectors of the chip under test.

在一种可能的实现方式中,所述处理器具体用于将所述待测芯片的结温维持在目标温度;其中,所述目标温度根据所述待测向量所属的测试项目确定。In a possible implementation, the processor is specifically configured to maintain the junction temperature of the chip under test at a target temperature; wherein the target temperature is determined according to the test item to which the vector under test belongs.

在一种可能的实现方式中,所述目标运行频率为所述待测向量的可运行频率范围中的第一运行频率;其中,所述待测向量在所述第一运行频率下的功率最接近所述参考功率。In a possible implementation, the target operating frequency is the first operating frequency in the operable frequency range of the vector to be measured; wherein the power of the vector to be measured at the first operating frequency is the highest. close to the reference power.

在一种可能的实现方式中,所述温度补偿装置包括加热装置;所述处理器,具体用于设置所述加热装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;其中,所述加热装置的功率根据所述待测向量在所述目标运行频率下的功率和总功率确定;所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。In a possible implementation, the temperature compensation device includes a heating device; the processor is specifically configured to set the power of the heating device, and combine the target operating frequency of the vector to be measured and the vector to be measured. The measured vector is input to the chip under test; wherein, the power of the heating device is determined based on the power of the vector to be measured at the target operating frequency and the total power; the total power is the junction of the chip under test. When the temperature is maintained at the target temperature, the power of the test vector that the chip under test is running is the sum of the power of the heating device.

在一种可能的实现方式中,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个;或者所述参考功率为总功率,其中,所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。In a possible implementation, the reference power is the power of a reference vector, and the reference vector is one of multiple test vectors of the chip under test; or the reference power is the total power, where The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature.

在一种可能的实现方式中,所述待测芯片中设置有至少一个温度传感器;所述装置还包括:测试基板、探针座、压块和散热器,其中:所述探针座,设置在所述测试基板上,用于放置所述待测芯片,并通过所述探针座中的探针将所述待测芯片的管脚与所述测试基板进行电气连接;所述压块,位于所述待测芯片上,用于向所述待测芯片施加压力;所述散热器,设置在所述压块上,用于带出所述待测芯片的温度;所述处理器,具体用于通过所述测试基板,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片,以及,在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,根据从所述至少一个温度传感器中获得的所述待测芯片的结温,并通过控制所述温度补偿装置,对所述待测芯片的结温进行控制。In a possible implementation, at least one temperature sensor is provided in the chip under test; the device further includes: a test substrate, a probe holder, a pressure block and a heat sink, wherein: the probe holder is provided On the test substrate, the chip to be tested is placed, and the pins of the chip to be tested are electrically connected to the test substrate through probes in the probe holder; the pressure block, The heat sink is located on the chip to be tested and is used to apply pressure to the chip to be tested; the heat sink is provided on the pressure block and is used to bring out the temperature of the chip to be tested; the processor, specifically For inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested through the test substrate, and executing the chip to be tested at the target operating frequency. During the vector measurement process, the junction temperature of the chip under test is controlled based on the junction temperature of the chip under test obtained from the at least one temperature sensor and by controlling the temperature compensation device.

在一种可能的实现方式中,所述装置还包括:测试基板、探针座、压块、热阻模块、至少一个温度传感器和散热器,其中:所述探针座,设置在所述测试基板上,用于放置所述待测芯片,并通过所述探针座中的探针将所述待测芯片的管脚与所述测试基板进行电气连接;所述热阻模块,位于所述待测芯片上,用于均衡所述待测芯片与所述压块之间的温度;所述压块,位于所述热阻模块上,用于向所述待测芯片施加压力;所述至少一个温度传感器,与所述待测芯片的封装体接触,用于测量所述待测芯片的壳温;所述散热器,设置在所述压块上,用于带出所述待测芯片的温度;所述处理器,具体用于通过所述测试基 板,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片,以及,在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,根据从所述至少一个温度传感器中获得的所述待测芯片的壳温,并通过控制所述温度补偿装置,对所述待测芯片的结温进行控制。In a possible implementation, the device further includes: a test substrate, a probe holder, a pressure block, a thermal resistance module, at least one temperature sensor and a heat sink, wherein: the probe holder is disposed on the test The substrate is used to place the chip under test and electrically connect the pins of the chip under test to the test substrate through the probes in the probe holder; the thermal resistance module is located on the On the chip to be tested, it is used to equalize the temperature between the chip to be tested and the pressing block; the pressing block is located on the thermal resistance module and is used to apply pressure to the chip to be tested; the at least A temperature sensor is in contact with the package of the chip to be tested and is used to measure the shell temperature of the chip to be tested; the heat sink is provided on the pressure block and is used to bring out the temperature of the chip to be tested. temperature; the processor is specifically configured to input the target operating frequency of the vector to be measured and the vector to be measured into the chip under test through the test substrate, and, when the chip under test is in the During the process of executing the vector under test at the target operating frequency, based on the shell temperature of the chip under test obtained from the at least one temperature sensor and by controlling the temperature compensation device, the temperature of the chip under test is adjusted. Junction temperature is controlled.

第三方面,本申请提供一种计算机可读存储介质,包括计算机程序,所述计算机程序在计算机或处理器上被执行时,使得所述计算机或处理器执行第一方面中任一项所述的方法。In a third aspect, the present application provides a computer-readable storage medium, including a computer program. When the computer program is executed on a computer or processor, the computer or processor causes the computer or processor to execute any one of the first aspects. Methods.

第四方面,本申请提供一种计算机程序,当所述计算机程序被计算机或处理器执行时,用于执行第一方面中任一项所述的方法。In a fourth aspect, the present application provides a computer program, which when the computer program is executed by a computer or processor, is used to perform the method described in any one of the first aspects.

第五方面,本申请提供一种电子设备,包括第二方面中任一项所述的温度控制装置。In a fifth aspect, the present application provides an electronic device, including the temperature control device according to any one of the second aspects.

附图说明Description of the drawings

图1为本申请实施例提供的温度控制装置的结构示意图;Figure 1 is a schematic structural diagram of a temperature control device provided by an embodiment of the present application;

图2为本申请实施例提供的第一种应用场景下的温度控制装置的结构示意图;Figure 2 is a schematic structural diagram of the temperature control device in the first application scenario provided by the embodiment of the present application;

图3为本申请实施例提供的第二种应用场景下的温度控制装置的结构示意图;Figure 3 is a schematic structural diagram of the temperature control device in the second application scenario provided by the embodiment of the present application;

图4为本申请实施例提供的第三种应用场景下的温度控制装置的结构示意图;Figure 4 is a schematic structural diagram of the temperature control device in the third application scenario provided by the embodiment of the present application;

图5为本申请实施例提供的第四种应用场景下的温度控制装置的结构示意图;Figure 5 is a schematic structural diagram of a temperature control device in the fourth application scenario provided by the embodiment of the present application;

图6为本申请实施例提供的处理器的结构示意图;Figure 6 is a schematic structural diagram of a processor provided by an embodiment of the present application;

图7为本申请实施例提供的温度控制方法的流程示意图。Figure 7 is a schematic flowchart of a temperature control method provided by an embodiment of the present application.

具体实施方式Detailed ways

下面将结合附图,对本申请中的技术方案进行描述。The technical solutions in this application will be described below with reference to the accompanying drawings.

为使本申请的目的、技术方案和优点更加清楚,下面将结合本申请中的附图,对本申请中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in this application. Obviously, the described embodiments are part of the embodiments of this application. , not all examples. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.

本申请的说明书实施例和权利要求书及附图中的术语“第一”、“第二”等仅用于区分描述的目的,而不能理解为指示或暗示相对重要性,也不能理解为指示或暗示顺序。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元。方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second", etc. in the description, embodiments, claims and drawings of this application are only used for the purpose of distinguishing and describing, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating. Or suggestive order. Furthermore, the terms "including" and "having" and any variations thereof are intended to cover a non-exclusive inclusion, for example, the inclusion of a series of steps or units. Methods, systems, products or devices are not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such processes, methods, products or devices.

应当理解,在本申请中,“至少一个(项)”是指一个或者多个,“多个”是指两个或两个以上。“和/或”,用于描述关联对象的关联关系,表示可以存在三种关系,例如,“A和/或B”可以表示:只存在A,只存在B以及同时存在A和B三种情况,其中A,B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。“以下至少一项(个)”或其类似表达,是指这些项中的任意组合,包括单项(个)或复数项(个)的任意组合。例如,a,b或c中的至少一项(个),可以表示:a,b,c,“a和b”,“a和c”,“b和c”,或“a和b和c”,其中a,b,c可以是单个,也可以是多个。It should be understood that in this application, "at least one (item)" refers to one or more, and "plurality" refers to two or more. "And/or" is used to describe the relationship between associated objects, indicating that there can be three relationships. For example, "A and/or B" can mean: only A exists, only B exists, and A and B exist simultaneously. , where A and B can be singular or plural. The character "/" generally indicates that the related objects are in an "or" relationship. “At least one of the following” or similar expressions thereof refers to any combination of these items, including any combination of a single item (items) or a plurality of items (items). For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c" ”, where a, b, c can be single or multiple.

为了解决上述技术问题,本申请提供了一种温度控制装置,该温度控制装置可以将测试向量的功耗控制在一定范围内,降低不同测试向量之间的功耗差异,从而降低待测芯片在不同测试向量间切换时,产生的热量波动,进而降低待测芯片的结温的控制难度。In order to solve the above technical problems, this application provides a temperature control device that can control the power consumption of test vectors within a certain range, reduce the power consumption difference between different test vectors, thereby reducing the power consumption of the chip under test. When switching between different test vectors, the heat generated fluctuates, thereby reducing the difficulty of controlling the junction temperature of the chip under test.

需要说明的是,此处的待测芯片指封装后的芯片,即待测芯片包括裸片(即芯片本身)和封装体。待测芯片的结温指待测芯片中的裸片的温度。It should be noted that the chip under test here refers to the packaged chip, that is, the chip under test includes a bare chip (that is, the chip itself) and a package body. The junction temperature of the chip under test refers to the temperature of the bare die in the chip under test.

本申请提供的温度控制装置的原理如下:The principle of the temperature control device provided by this application is as follows:

由于测试向量的功耗越大,待测芯片执行测试向量时产生的热量就越多。又由于测试向量的功耗与测试向量的功率呈正相关关系。因此,测试向量的功率越大,待测芯片执行测试向量时产生的热量就越多。As the power consumption of the test vector increases, the chip under test generates more heat when executing the test vector. And because the power consumption of the test vector is positively correlated with the power of the test vector. Therefore, the more powerful the test vector, the more heat is generated when the chip under test executes the test vector.

测试向量的功率可以通过下述公式计算得到:The power of the test vector can be calculated by the following formula:

P n为测试向量n的功率,k n为测试向量n的常数,V n为待测芯片执行测试向量n时的IO口电压,f n(k)为测试向量n的运行频率,[fmin,fmax]为测试向量n的可运行频率范围,f n(k)∈[fmin,fmax],fmin和fmax由待测芯片决定。 P n is the power of test vector n, k n is the constant of test vector n, V n is the IO port voltage when the chip under test executes test vector n, f n (k) is the operating frequency of test vector n, [fmin, fmax] is the operable frequency range of the test vector n, f n (k)∈[fmin, fmax], fmin and fmax are determined by the chip under test.

需要说明的是,不同的测试向量对应的k n不同,不同的测试向量对应的V n不同,不同测试向量的可运行频率范围[fmin,fmax]相同。 It should be noted that different test vectors correspond to different k n , different test vectors correspond to different V n , and the operable frequency ranges [fmin, fmax] of different test vectors are the same.

由于测试向量的运行频率存在一个可运行频率范围,因此,可以通过调整测试向量的运行频率来调整测试向量的功率。Since the operating frequency of the test vector has an operable frequency range, the power of the test vector can be adjusted by adjusting the operating frequency of the test vector.

基于此,可以通过调整测试向量的运行频率,来调整测试向量的功率,进而调整测试向量的功耗,以将测试向量的功耗控制在一定范围内,降低不同测试向量间的功耗差异,进而降低待测芯片在不同测试向量间切换时,产生的热量波动,从而降低待测芯片结温的控制难度。Based on this, the power of the test vector can be adjusted by adjusting the running frequency of the test vector, and then the power consumption of the test vector can be adjusted to control the power consumption of the test vector within a certain range and reduce the power consumption difference between different test vectors. This further reduces the heat fluctuations generated when the chip under test switches between different test vectors, thereby reducing the difficulty of controlling the junction temperature of the chip under test.

下面,对基于上述原理构建的温度控制装置进行说明。Next, a temperature control device constructed based on the above principles will be described.

图1为本申请实施例提供的温度控制装置的结构示意图,如图1所示,该温度控制装置包括:处理器110和温度补偿装置120。其中:FIG. 1 is a schematic structural diagram of a temperature control device provided by an embodiment of the present application. As shown in FIG. 1 , the temperature control device includes a processor 110 and a temperature compensation device 120 . in:

处理器110包括但不限于中央处理单元(CPU)、微控制器(MCU)、数字信号处理器(DSP)、神经处理单元(NPU)或微处理器等。处理器110用于将待测向量的目标运行频率和待测向量输入待测芯片130,以及,在待测芯片130在目标运行频率下执行待测向量的过程中,通过控制温度补偿装置120,对待测芯片130的结温进行控制。待测向量的目标运行频率根据参考功率确定。待测向量为待测芯片130的多个测试向量中的任一个测试向量。参考功率用于指示待测向量的功率的波动基准。温度补偿装置120用于对待测芯片130的结温进行补偿。温度补偿装置120的具体实现方式根据温度控制装置的应用场景确定。例如,温度补偿装置120包括加热装置和降温装置。再例如,温度补偿装置120包括降温装置。加热装置包括但不限于加热棒等,降温装置包括但不限于风扇、水冷装置等。The processor 110 includes, but is not limited to, a central processing unit (CPU), a microcontroller (MCU), a digital signal processor (DSP), a neural processing unit (NPU), a microprocessor, etc. The processor 110 is configured to input the target operating frequency of the vector to be measured and the vector to be measured into the chip under test 130, and during the process of the chip under test 130 executing the vector to be measured at the target operating frequency, by controlling the temperature compensation device 120, The junction temperature of the chip under test 130 is controlled. The target operating frequency of the vector to be measured is determined based on the reference power. The vector to be tested is any test vector among multiple test vectors of the chip under test 130 . The reference power is used to indicate the fluctuation base of the power of the vector to be measured. The temperature compensation device 120 is used to compensate the junction temperature of the chip under test 130 . The specific implementation manner of the temperature compensation device 120 is determined according to the application scenario of the temperature control device. For example, the temperature compensation device 120 includes a heating device and a cooling device. For another example, the temperature compensation device 120 includes a cooling device. Heating devices include but are not limited to heating rods, etc., and cooling devices include but are not limited to fans, water cooling devices, etc.

由上可知,待测向量的目标运行频率根据参考功率确定,参考功率用于指示待测向 量的功率的波动基准,即,以参考功率作为基准确定待测向量的目标运行频率,以将待测向量的功率限定在以参考功率作为基准的范围内,从而将待测向量的功耗限定在一定范围内,降低了不同待测向量间的功耗差异,进而降低了待测芯片130在不同待测向量间切换时,产生的热量波动,从而降低了待测芯片130结温的控制难度。It can be seen from the above that the target operating frequency of the vector to be measured is determined based on the reference power. The reference power is used to indicate the fluctuation baseline of the power of the vector to be measured. That is, the target operating frequency of the vector to be measured is determined based on the reference power to The power of the vector is limited to a range based on the reference power, thereby limiting the power consumption of the vector to be measured to a certain range, reducing the power consumption difference between different vectors to be measured, and thereby reducing the power consumption of the chip under test 130 in different to-be-tested vectors. When switching between measurement vectors, the heat generated fluctuates, thereby reducing the difficulty of controlling the junction temperature of the chip under test 130 .

由于温度控制装置是在测试待测芯片130的过程中,对待测芯片130的结温进行控制,因此,对待测芯片130进行测试的相关部件可以包括在温度控制装置内,也可以不包括在温度控制装置内,本申请对此不作特殊限定。Since the temperature control device controls the junction temperature of the chip under test 130 during the process of testing the chip under test 130, the relevant components for testing the chip under test 130 may be included in the temperature control device, or may not be included in the temperature control device. In the control device, this application does not impose special restrictions on this.

在对待测芯片130的结温进行控制时,采用的基础数量存在以下两种情况。其中:When controlling the junction temperature of the chip under test 130, the basic quantity used has the following two situations. in:

第一种,基础数据为待测芯片130的壳温,即获得待测芯片130的壳温,通过待测芯片130的壳温控制待测芯片130的结温。First, the basic data is the shell temperature of the chip under test 130 , that is, the shell temperature of the chip under test 130 is obtained, and the junction temperature of the chip under test 130 is controlled by the shell temperature of the chip under test 130 .

第二种,基础数据为待测芯片130的结温,即获得待测芯片130的结温,通过待测芯片130的结温控制待测芯片130的结温。In the second method, the basic data is the junction temperature of the chip under test 130 , that is, the junction temperature of the chip under test 130 is obtained, and the junction temperature of the chip under test 130 is controlled by the junction temperature of the chip under test 130 .

在对待测芯片130的结温进行控制时,温度控制的目标存在以下两种情况。其中:When controlling the junction temperature of the chip under test 130, the temperature control targets include the following two situations. in:

第一种,将待测芯片130的结温控制在目标温度之下。目标温度根据待测向量所属的测试项目确定。测试项目包括但不限于:ATE测试、功能性测试等需将待测芯片130的结温控制在某一个温度之下的测试项目。例如,目标温度为待测芯片130的不可逆失效温度。The first method is to control the junction temperature of the chip under test 130 below the target temperature. The target temperature is determined according to the test item to which the vector to be measured belongs. The test items include but are not limited to: ATE test, functional test and other test items that need to control the junction temperature of the chip under test 130 under a certain temperature. For example, the target temperature is the irreversible failure temperature of the chip under test 130 .

第二种,将待测芯片130的结温维持在目标温度。目标温度根据待测向量所属的测试项目确定。测试项目包括但不限于:Burn-in测试、老化测试等需将待测芯片130的结温维持在某一温度的测试项目。例如,目标温度为能够暴露待测芯片130薄弱点的温度。The second method is to maintain the junction temperature of the chip under test 130 at the target temperature. The target temperature is determined according to the test item to which the vector to be measured belongs. Test items include but are not limited to: Burn-in test, aging test and other test items that require maintaining the junction temperature of the chip under test 130 at a certain temperature. For example, the target temperature is a temperature that can expose weak points of the chip under test 130 .

由于采用的基础数据不同,对待测芯片130进行测试的相关部件不同。又由于温度控制的目标不同,参考功率的确定方式、温度补偿装置120的具体实现形式、待测向量的目标运行频率的确定方式均不同。因此,在下文中,将在由两种基础数据和两种温度控制目标组成的四种应用场景下,对包括对待测芯片130进行测试的相关部件的温度控制装置的结构和运行过程进行详细说明。Due to the different basic data used, the relevant components for testing the chip under test 130 are different. In addition, due to different temperature control objectives, the reference power is determined in different ways, the specific implementation form of the temperature compensation device 120, and the target operating frequency of the vector to be measured are determined in different ways. Therefore, in the following, the structure and operation process of the temperature control device including the relevant components for testing the chip under test 130 will be described in detail under four application scenarios consisting of two basic data and two temperature control targets.

图2为本申请实施例提供的第一种应用场景下的温度控制装置的结构示意图。在第一种应用场景中,采用的基础数据为待测芯片130的结温,温度控制的目标为将待测芯片130的结温控制在目标温度之下。Figure 2 is a schematic structural diagram of the temperature control device in the first application scenario provided by the embodiment of the present application. In the first application scenario, the basic data used is the junction temperature of the chip under test 130, and the goal of temperature control is to control the junction temperature of the chip under test 130 below the target temperature.

由于采用的基础数据为待测芯片130的结温,因此,需在待测芯片130中设置至少一个温度传感器(图2中未示出),以通过至少一个温度传感器获得待测芯片130的结温。温度传感器的实现方式包括但不限于PN结。由于温度控制的目标是将待测芯片130的结温控制在目标温度之下,因此,温度补偿装置120为降温装置121。Since the basic data used is the junction temperature of the chip under test 130, at least one temperature sensor (not shown in FIG. 2) needs to be provided in the chip under test 130 to obtain the junction temperature of the chip under test 130 through at least one temperature sensor. temperature. Implementations of temperature sensors include but are not limited to PN junctions. Since the goal of temperature control is to control the junction temperature of the chip under test 130 below the target temperature, the temperature compensation device 120 is a cooling device 121 .

如图2所示,温度控制装置包括:处理器110、降温装置121、测试基板140、探针座150、压块160和散热器170。其中:As shown in FIG. 2 , the temperature control device includes: a processor 110 , a cooling device 121 , a test substrate 140 , a probe base 150 , a pressure block 160 and a heat sink 170 . in:

探针座150设置在测试基板140上,探针座150用于放置待测芯片130,并通过探针座150中的探针将待测芯片130的管脚与测试基板140进行电气连接。The probe holder 150 is disposed on the test substrate 140 . The probe holder 150 is used to place the chip under test 130 and electrically connect the pins of the chip under test 130 to the test substrate 140 through the probes in the probe holder 150 .

压块160位于待测芯片130上,压块160用于向待测芯片130施加压力,以确保待测芯片130的管脚与探针充分接触。The pressure block 160 is located on the chip under test 130, and is used to apply pressure to the chip under test 130 to ensure that the pins of the chip under test 130 are in full contact with the probe.

散热器170设置在压块160上,散热器170用于带出待测芯片130的温度,以将带出 的温度与降温装置121进行交换,起到降温的作用。The heat sink 170 is arranged on the pressure block 160. The heat sink 170 is used to bring out the temperature of the chip 130 to be tested, so as to exchange the brought out temperature with the cooling device 121 to play a cooling role.

处理器110设置在测试基板140上。测试基板140上设置有印刷电路(图4中未示出),处理器110通过测试基板140上的印刷电路与探针座150中的探针连接,这样,处理器110就可以通过印刷电路和探针与待测芯片130通信并向待测芯片130提供电源信号。此外,降温装置121与测试基板140上的印刷电路连接,这样,处理器110就可以通过印刷电路向降温装置121提供电源信号,并对降温装置121进行控制。The processor 110 is provided on the test substrate 140. The test substrate 140 is provided with a printed circuit (not shown in Figure 4), and the processor 110 is connected to the probes in the probe base 150 through the printed circuit on the test substrate 140. In this way, the processor 110 can be connected through the printed circuit and The probe communicates with the chip under test 130 and provides a power signal to the chip under test 130 . In addition, the cooling device 121 is connected to the printed circuit on the test substrate 140, so that the processor 110 can provide a power signal to the cooling device 121 through the printed circuit and control the cooling device 121.

需要说明的是,在其他实施例中,处理器110还可以设置在测试基板140外,处理器110和降温装置121还可以通过设置在测试基板140上的电气连接头与测试基板连接。电气连接头与测试基板140上的印刷电路连接。It should be noted that in other embodiments, the processor 110 can also be disposed outside the test substrate 140 , and the processor 110 and the cooling device 121 can also be connected to the test substrate through electrical connectors disposed on the test substrate 140 . The electrical connectors are connected to the printed circuits on the test substrate 140 .

处理器110用于向待测芯片130提供电源信号,将待测向量的目标运行频率和待测向量输入待测芯片130中,以及,在待测芯片130在待测向量的目标运行频率下执行待测向量的过程中,从待测芯片130中的至少一个温度传感器中获得待测芯片130的结温,根据获得的待测芯片130的结温,并通过控制降温装置121,将待测芯片130的结温控制在目标温度之下。处理器110还用于向降温装置121提供电源信号,并对降温装置121进行控制。The processor 110 is used to provide a power signal to the chip under test 130, input the target operating frequency of the vector under test and the vector under test into the chip under test 130, and execute the chip under test 130 at the target operating frequency of the vector under test. During the process of measuring the vector, the junction temperature of the chip under test 130 is obtained from at least one temperature sensor in the chip under test 130. According to the obtained junction temperature of the chip under test 130, and by controlling the cooling device 121, the chip under test 130 is The junction temperature of 130 is controlled below the target temperature. The processor 110 is also used to provide a power signal to the cooling device 121 and control the cooling device 121 .

参考功率的确定方式包括但不限于以下两种方式:The determination methods of reference power include but are not limited to the following two methods:

第一种,参考功率可以为参考向量的功率,参考向量为待测芯片130的多个测试向量中的一个测试向量。具体的,参考向量可以是待测芯片130的多个测试向量中的任一个测试向量。参考向量也可以是待测芯片130的多个测试向量中指定的一个测试向量,例如运行频率最小时,功率最大的测试向量。参考向量的功率可以根据上述测试向量的功率计算公式获得。需要说明的是,计算参考向量的功率时采用的运行频率可以为参考向量的可运行频率范围内的一个运行频率。First, the reference power may be the power of a reference vector, and the reference vector is one test vector among multiple test vectors of the chip under test 130 . Specifically, the reference vector may be any test vector among multiple test vectors of the chip under test 130 . The reference vector may also be a specified test vector among multiple test vectors of the chip under test 130, for example, the test vector with the highest power when the operating frequency is the smallest. The power of the reference vector can be obtained according to the power calculation formula of the test vector mentioned above. It should be noted that the operating frequency used when calculating the power of the reference vector may be an operating frequency within the operable frequency range of the reference vector.

第二种,参考功率可以为待测芯片130的多个测试向量的功率范围中的一个功率。具体的,参考功率可以为待测芯片130的多个测试向量的功率范围中的任一个功率。参考功率还可以为待测芯片130的多个测试向量的功率范围中的指定的一个功率,例如,功率范围的中间值。确定待测芯片130的多个测试向量的功率范围的过程为:计算多个测试向量中的每个测试向量的功率范围,对测试向量的功率范围做并集,以得到多个测试向量的功率范围。需要说明的是,上述关于参考功率的说明仅为示例性的,并不用于限定本申请。Second, the reference power may be a power in the power range of multiple test vectors of the chip under test 130 . Specifically, the reference power may be any power in the power range of multiple test vectors of the chip under test 130 . The reference power may also be a specified power in the power ranges of multiple test vectors of the chip under test 130 , for example, the middle value of the power range. The process of determining the power range of multiple test vectors of the chip under test 130 is: calculating the power range of each test vector in the multiple test vectors, and performing a union of the power ranges of the test vectors to obtain the power of the multiple test vectors. scope. It should be noted that the above description of the reference power is only exemplary and is not intended to limit the present application.

确定待测向量的目标运行频率的方式为:将待测向量的默认功率与参考功率进行比较。其中,待测向量的默认功率为待测向量在待测向量的默认运行频率下的功率。待测向量的默认运行频率为待测向量的可运行频率范围中的一个运行频率。具体的,待测向量的默认运行频率可以为待测向量的可运行频率范围中的任一个运行频率。待测向量的默认运行频率也可以为待测向量的可运行频率范围中指定的一个运行频率,例如,可运行频率范围的中间值或最小值。若待测向量的默认功率小于或等于参考功率,则待测向量的目标运行频率为待测向量的默认运行频率。若待测向量的默认功率大于参考功率,则待测向量的目标运行频率为待测向量的可运行频率范围中最小的运行频率。The target operating frequency of the vector under test is determined by comparing the default power of the vector under test with the reference power. Among them, the default power of the vector to be measured is the power of the vector to be measured at the default operating frequency of the vector to be measured. The default operating frequency of the vector under test is an operating frequency within the operable frequency range of the vector under test. Specifically, the default operating frequency of the vector to be measured can be any operating frequency in the operable frequency range of the vector to be measured. The default operating frequency of the vector to be measured can also be an operating frequency specified in the operable frequency range of the vector to be measured, for example, the middle value or the minimum value of the operable frequency range. If the default power of the vector to be measured is less than or equal to the reference power, the target operating frequency of the vector to be measured is the default operating frequency of the vector to be measured. If the default power of the vector to be measured is greater than the reference power, the target operating frequency of the vector to be measured is the smallest operating frequency in the operable frequency range of the vector to be measured.

下面,举例对测试和温度控制过程进行说明。具体过程如下:Below, an example is given to illustrate the testing and temperature control process. The specific process is as follows:

处理器110将待测向量1的运行频率和待测向量1输入待测芯片130中。待测向量1 的运行频率为待测向量1的可运行频率范围中的一个运行频率。The processor 110 inputs the operating frequency of the vector 1 under test and the vector 1 under test into the chip 130 under test. The operating frequency of vector 1 to be measured is an operating frequency within the operable frequency range of vector 1 to be measured.

在待测芯片130在待测向量1的运行频率下执行待测向量1的过程中,处理器110从待测芯片130中的至少一个温度传感器中,获得待测芯片130的结温。When the chip under test 130 executes the vector 1 under test at the operating frequency of the vector 1 under test, the processor 110 obtains the junction temperature of the chip under test 130 from at least one temperature sensor in the chip under test 130 .

处理器110将待测芯片130的结温与目标温度进行比较,若待测芯片130的结温大于目标温度,则增大降温装置121的功率,以加强对待测芯片130的降温力度,例如,增加风扇的转速,加速散热,直至确保待测芯片130的结温维持在目标温度之下。将待测向量1作为参考向量,并根据上述公式,计算参考向量的功率,将参考向量的功率作为参考功率。增大降温装置121的功率的方式包括但不限于增加降温装置121的运行电压和/或电流。The processor 110 compares the junction temperature of the chip under test 130 with the target temperature. If the junction temperature of the chip under test 130 is greater than the target temperature, the processor 110 increases the power of the cooling device 121 to enhance the cooling of the chip under test 130, for example, Increase the speed of the fan to accelerate heat dissipation until the junction temperature of the chip under test 130 is maintained below the target temperature. Use the vector 1 to be measured as the reference vector, calculate the power of the reference vector according to the above formula, and use the power of the reference vector as the reference power. Ways of increasing the power of the cooling device 121 include, but are not limited to, increasing the operating voltage and/or current of the cooling device 121 .

处理器110确定待测向量2的目标运行频率。具体的,若待测向量2的默认功率小于或等于参考功率,则将待测向量2的默认运行频率确定为待测向量2的目标运行频率。若待测向量2的默认功率大于参考功率,则将待测向量2的可运行频率范围中最小的运行频率确定为待测向量2的目标运行频率。The processor 110 determines the target operating frequency of vector 2 under test. Specifically, if the default power of vector 2 to be measured is less than or equal to the reference power, the default operating frequency of vector 2 to be measured is determined as the target operating frequency of vector 2 to be measured. If the default power of vector 2 to be measured is greater than the reference power, the smallest operating frequency in the operable frequency range of vector 2 to be measured is determined as the target operating frequency of vector 2 to be measured.

处理器110将待测向量2的目标运行频率和待测向量2输入待测芯片130中。The processor 110 inputs the target operating frequency of the vector 2 under test and the vector 2 under test into the chip 130 under test.

在待测芯片130在待测向量2的目标运行频率下执行待测向量2的过程中,处理器110从待测芯片130中的至少一个温度传感器中,获得待测芯片130的结温,以及根据待测芯片130的结温,结合PID算法、线性温控算法等,并通过控制降温装置121,动态调节待测芯片130的结温,使得待测芯片130的结温小于目标温度。When the chip under test 130 executes the vector under test 2 at the target operating frequency of the vector under test 2, the processor 110 obtains the junction temperature of the chip under test 130 from at least one temperature sensor in the chip under test 130, and According to the junction temperature of the chip under test 130, combined with the PID algorithm, linear temperature control algorithm, etc., and by controlling the cooling device 121, the junction temperature of the chip under test 130 is dynamically adjusted, so that the junction temperature of the chip under test 130 is lower than the target temperature.

基于执行待测向量2的原理,执行剩余的待测向量。Based on the principle of executing vector 2 to be measured, the remaining vectors to be measured are executed.

由上可知,参考功率和待测向量的目标运行频率的计算是在测试和温度控制的过程中实时计算的。在本申请的其他实施例中,参考功率和待测向量的目标运行频率也可以通过离线的方式提前计算得到。即提前计算参考功率和多个测试向量中的每个测试向量的目标运行频率,这样,在测试过程中,直接在多个测试向量的目标运行频率中获得待测向量的目标运行频率即可,无需在线计算。It can be seen from the above that the calculation of the reference power and the target operating frequency of the vector to be measured is calculated in real time during the test and temperature control process. In other embodiments of the present application, the reference power and the target operating frequency of the vector to be measured can also be calculated in advance in an offline manner. That is, the reference power and the target operating frequency of each test vector in multiple test vectors are calculated in advance. In this way, during the test process, the target operating frequency of the vector to be measured can be obtained directly from the target operating frequencies of multiple test vectors. No online calculations required.

为了增加温度控制的稳定性和精准度并确保待测芯片130温度的稳定性,在将待测向量的目标运行频率和待测向量输入待测芯片130之前,处理器110还可以计算待测向量在目标运行频率下的功率,将待测向量在目标运行频率下的功率与参考功率进行比较,若待测向量在目标运行频率下的功率大于参考功率,则先增加的降温装置121的功率,以加大降温力度,再将待测向量的目标运行频率和待测向量输入待测芯片130。若待测向量在目标运行频率下的功率小于或者等于参考功率,则将待测向量的目标运行频率和待测向量输入待测芯片130,无需调整降温装置121的功率。In order to increase the stability and accuracy of temperature control and ensure the stability of the temperature of the chip under test 130, the processor 110 can also calculate the vector under test before inputting the target operating frequency of the vector under test and the vector under test into the chip under test 130. For the power at the target operating frequency, the power of the vector to be measured at the target operating frequency is compared with the reference power. If the power of the vector to be measured at the target operating frequency is greater than the reference power, the power of the cooling device 121 is first increased, In order to increase the cooling intensity, the target operating frequency of the vector to be measured and the vector to be measured are input into the chip 130 to be tested. If the power of the vector to be measured at the target operating frequency is less than or equal to the reference power, the target operating frequency of the vector to be measured and the vector to be measured are input to the chip to be measured 130 without adjusting the power of the cooling device 121 .

显然,在将待测向量输入待测芯片130之前,若待测向量在目标运行频率下的功率大于参考功率,则增大降温装置121的功率,以增大对待测芯片130的降温力度。即提前预测降温装置121的功率,并根据预测结果对降温装置121的功率进行调整,以提前进行温度补偿,提高了温度控制的稳定性和精准度,并确保了待测芯片130的温度的稳定性。Obviously, before inputting the vector to be measured into the chip under test 130, if the power of the vector to be measured at the target operating frequency is greater than the reference power, the power of the cooling device 121 is increased to increase the cooling intensity of the chip under test 130. That is, the power of the cooling device 121 is predicted in advance, and the power of the cooling device 121 is adjusted according to the prediction result to perform temperature compensation in advance, which improves the stability and accuracy of temperature control and ensures the stability of the temperature of the chip under test 130 sex.

需要说明的是,测试基板140、探针座150、压块160和散热器170为对待测芯片130进行测试的相关部件。It should be noted that the test substrate 140 , the probe holder 150 , the pressure block 160 and the heat sink 170 are relevant components for testing the chip under test 130 .

图3为本申请实施例提供的第二种应用场景下的温度控制装置的结构示意图。在第二种应用场景中,采用的基础数据为待测芯片130的壳温,温度控制的目标为将待测芯片130的结温控制在目标温度之下。Figure 3 is a schematic structural diagram of the temperature control device in the second application scenario provided by the embodiment of the present application. In the second application scenario, the basic data used is the shell temperature of the chip under test 130, and the goal of temperature control is to control the junction temperature of the chip under test 130 below the target temperature.

图3中的温度控制装置与图2中的温度控制装置在结构上的区别在于:在图3示出的温度控制装置中增加了热阻模块180、至少一个温度传感器190。其中,热阻模块180位于待测芯片130和压块160之间,热阻模块180于均衡待测芯片130与压块160之间的温度,以提高待测芯片130的壳温的测量准确度。热阻模块180的材料例如可以为铟等,本申请对此不做限定。由于在该场景中,采用的基础数据为待测芯片130的壳温,因此,无需在待测芯片130中设置温度传感器,需在待测芯片130的封装体上设置至少一个温度传感器190,以通过该至少一个温度传感器190获得待测芯片130的壳温。至少一个温度传感器190与测试基板140上的印刷电路连接,处理器110通过印刷电路与至少一个温度传感器190连接,以向至少一个温度传感器190提供电源信号,并从至少一个温度传感器190中获得待测芯片130的壳温。The structural difference between the temperature control device in Figure 3 and the temperature control device in Figure 2 is that a thermal resistance module 180 and at least one temperature sensor 190 are added to the temperature control device shown in Figure 3 . Among them, the thermal resistance module 180 is located between the chip under test 130 and the pressure block 160. The thermal resistance module 180 balances the temperature between the chip under test 130 and the pressure block 160 to improve the measurement accuracy of the shell temperature of the chip under test 130. . The material of the thermal resistance module 180 may be, for example, indium, which is not limited in this application. Since in this scenario, the basic data used is the shell temperature of the chip under test 130, there is no need to set a temperature sensor in the chip under test 130. At least one temperature sensor 190 needs to be set on the package of the chip under test 130 to The shell temperature of the chip 130 under test is obtained through the at least one temperature sensor 190 . At least one temperature sensor 190 is connected to a printed circuit on the test substrate 140. The processor 110 is connected to the at least one temperature sensor 190 through the printed circuit to provide a power signal to the at least one temperature sensor 190 and obtain the desired temperature signal from the at least one temperature sensor 190. Measure the shell temperature of chip 130.

图3中的温度控制装置与图2中的温度控制装置在执行流程上的区别在于:在对待测芯片130的结温进行控制的过程中,处理器110从与待测芯片130的封装体接触的至少一个温度传感器190中获得待测芯片130的壳温,根据待测芯片130的壳温推测待测芯片130的结温,然后,根据推测的待测芯片130的结温,并通过控制降温装置121,将待测芯片130的结温控制在目标温度之下。The difference in execution flow between the temperature control device in Figure 3 and the temperature control device in Figure 2 is that during the process of controlling the junction temperature of the chip under test 130, the processor 110 is in contact with the package of the chip under test 130. The shell temperature of the chip under test 130 is obtained from at least one temperature sensor 190, and the junction temperature of the chip under test 130 is estimated based on the shell temperature of the chip under test 130. Then, based on the estimated junction temperature of the chip under test 130, the temperature is reduced by controlling Device 121 controls the junction temperature of the chip under test 130 below the target temperature.

需要说明的是,测试基板140、探针座150、压块160、热阻模块180、至少一个温度传感器190和散热器170为对待测芯片130进行测试的相关部件。It should be noted that the test substrate 140 , the probe holder 150 , the pressure block 160 , the thermal resistance module 180 , at least one temperature sensor 190 and the heat sink 170 are relevant components for testing the chip under test 130 .

图4为本申请实施例提供的第三种应用场景下的温度控制装置的结构示意图。在第三种应用场景中,采用的基础数据为待测芯片130的结温,温度控制的目标为将待测芯片130的结温维持在目标温度。需要说明的是,将待测芯片130的结温维持在目标温度指目标温度与待测芯片130的结温的差值的绝对值小于预设误差值,该预设误差值可以根据设计需求设定。Figure 4 is a schematic structural diagram of the temperature control device in the third application scenario provided by the embodiment of the present application. In the third application scenario, the basic data used is the junction temperature of the chip under test 130, and the goal of temperature control is to maintain the junction temperature of the chip under test 130 at the target temperature. It should be noted that maintaining the junction temperature of the chip under test 130 at the target temperature means that the absolute value of the difference between the target temperature and the junction temperature of the chip under test 130 is less than a preset error value. The preset error value can be set according to design requirements. Certainly.

由于温度控制的目标是将待测芯片130的结温维持在目标温度,因此,温度补偿装置120包括降温装置121和加热装置122。Since the goal of temperature control is to maintain the junction temperature of the chip under test 130 at the target temperature, the temperature compensation device 120 includes a cooling device 121 and a heating device 122 .

图4中的温度控制装置与图2中的温度控制装置在结构上的区别在于:在图4示出的温度控制装置中增加了加热装置122。The structural difference between the temperature control device in Figure 4 and the temperature control device in Figure 2 is that a heating device 122 is added to the temperature control device shown in Figure 4 .

降温装置121、测试基板140、探针座150、压块160和散热器170的位置关系和各个部件的功能已经在图2中进行了说明,此处不再赘述。加热装置122设置在压块160中。需要说明的是,在其他实施例中,加热装置122还可以设置在压块160和待测芯片130之间,本申请对此不作特殊限定。加热装置122与测试基板140上的印刷电路连接。处理器110通过印刷电路向加热装置122提供电源信号,并对加热装置122进行控制,例如,增加加热装置122的功率,以加大对待测芯片130的加热力度,再例如,降低加热装置122的功率,以减弱对待测芯片130的加热力度。增加加热装置122的功率的方式包括但不限于增加加热装置122的运行电压和/或电流。降低加热装置122的功率的方式包括但不限于降低加热装置122的运行电压和/或电流。The positional relationship of the cooling device 121, the test substrate 140, the probe holder 150, the pressure block 160 and the heat sink 170 and the functions of each component have been explained in Figure 2 and will not be described again here. The heating device 122 is arranged in the pressing block 160 . It should be noted that in other embodiments, the heating device 122 can also be disposed between the pressure block 160 and the chip to be tested 130 , which is not specifically limited in this application. The heating device 122 is connected to the printed circuit on the test substrate 140 . The processor 110 provides a power signal to the heating device 122 through the printed circuit and controls the heating device 122, for example, increasing the power of the heating device 122 to increase the heating intensity of the chip under test 130, or, for example, reducing the power of the heating device 122. power to weaken the heating intensity of the chip 130 under test. Ways of increasing the power of the heating device 122 include, but are not limited to, increasing the operating voltage and/or current of the heating device 122 . Ways of reducing the power of the heating device 122 include, but are not limited to, reducing the operating voltage and/or current of the heating device 122 .

处理器110用于向待测芯片130提供电源信号,将待测向量的目标运行频率和待测向量输入待测芯片130中,以及,在待测芯片130在待测向量的目标运行频率下执行待测向量的过程中,从待测芯片130中的至少一个温度传感器中获得待测芯片130的结温,根据获得的待测芯片130的结温,并通过控制降温装置121和/或加热装置122,将待测芯片130的结温控制维持在目标温度。处理器110还用于向降温装置121和加热装置122提供电源信号,并对降温装置121和加热装置122进行控制。The processor 110 is used to provide a power signal to the chip under test 130, input the target operating frequency of the vector under test and the vector under test into the chip under test 130, and execute the chip under test 130 at the target operating frequency of the vector under test. During the process of measuring the vector, the junction temperature of the chip under test 130 is obtained from at least one temperature sensor in the chip under test 130 , and based on the obtained junction temperature of the chip under test 130 , the cooling device 121 and/or the heating device are controlled. 122. Control the junction temperature of the chip under test 130 to maintain the target temperature. The processor 110 is also used to provide power signals to the cooling device 121 and the heating device 122, and to control the cooling device 121 and the heating device 122.

参考功率的确定方式包括但不限于以下三种方式:The determination methods of reference power include but are not limited to the following three methods:

第一种,参考功率为参考向量的功率,参考向量及参考向量的功率已经在上文中进行了说明,此处不再朱赘述。The first one is that the reference power is the power of the reference vector. The reference vector and the power of the reference vector have been explained above and will not be described in detail here.

第二种,参考功率还可以为待测芯片130的多个测试向量的功率范围中的一个功率。第二种方式已经在上文中进行了说明,此处不再赘述。Secondly, the reference power may also be a power in the power range of multiple test vectors of the chip under test 130 . The second method has been explained above and will not be described again here.

第三种,参考功率为总功率,其中,总功率为在待测芯片130的结温维持在目标温度时,待测芯片130正在运行的测试向量的功率和加热装置122的功率之和。Third, the reference power is the total power, where the total power is the sum of the power of the test vector that the chip under test 130 is running and the power of the heating device 122 when the junction temperature of the chip under test 130 is maintained at the target temperature.

确定待测向量的目标运行频率方式为:待测向量的目标运行频率为待测向量的可运行频率范围中的第一运行频率;其中,待测向量在第一运行频率下的功率最接近参考功率。The method for determining the target operating frequency of the vector to be measured is: the target operating frequency of the vector to be measured is the first operating frequency in the operable frequency range of the vector to be measured; where the power of the vector to be measured at the first operating frequency is closest to the reference power.

显然,通过将待测向量的功率最接近参考功率时的运行频率确定为待测向量的目标运行频率,使待测向量在目标运行频率下的功率最接近参考功率,即通过调整目标运行频率,使得待测向量的功率向参考功率靠近,以将待测向量的功率控制在一定范围内,从而将待测向量的功耗控制在一定范围内,降低不同待测向量间的功耗差异,降低待测芯片130在不同待测向量间切换时,产生的热量波动,从而降低待测芯片130结温的控制难度。Obviously, by determining the operating frequency when the power of the vector to be measured is closest to the reference power as the target operating frequency of the vector to be measured, the power of the vector to be measured at the target operating frequency is closest to the reference power, that is, by adjusting the target operating frequency, Make the power of the vector to be measured close to the reference power to control the power of the vector to be measured within a certain range, thereby controlling the power consumption of the vector to be measured within a certain range, reducing the power consumption difference between different vectors to be measured, and reducing When the chip under test 130 switches between different vectors under test, the heat generated fluctuates, thereby reducing the difficulty of controlling the junction temperature of the chip under test 130 .

下面,举例对测试和温度控制过程进行说明。具体过程如下:Below, an example is given to illustrate the testing and temperature control process. The specific process is as follows:

处理器110将待测向量1的运行频率和待测向量1输入待测芯片130中。待测向量1的运行频率为待测向量1的可运行频率范围中的一个运行频率。The processor 110 inputs the operating frequency of the vector 1 under test and the vector 1 under test into the chip 130 under test. The operating frequency of vector 1 to be measured is an operating frequency within the operable frequency range of vector 1 to be measured.

在待测芯片130在待测向量1的运行频率下执行待测向量1的过程中,处理器110从待测芯片130中的至少一个温度传感器中,获得待测芯片130的结温。When the chip under test 130 executes the vector 1 under test at the operating frequency of the vector 1 under test, the processor 110 obtains the junction temperature of the chip under test 130 from at least one temperature sensor in the chip under test 130 .

处理器110将待测芯片130的结温与目标温度进行比较,若待测芯片130的结温大于目标温度,则增大降温装置121的功率,以加强对待测芯片130的降温力度和/或降低加热装置122的功率,以降低对待测芯片130的加热力度,例如,增加风扇的转速,加速散热,降低加热棒的功率,降低加热效率,直至待测芯片130的结温维持在目标温度。若待测芯片130的结温小于目标温度,则增大加热装置122的功率,以增加对待测芯片130的加热力度和/或降低降温装置121的功率,以降低对待测芯片130的降温力度,例如,增加加热棒的功率,加速加热,降低风扇的转速,降低散热效率,直至待测芯片130的结温维持在目标温度。The processor 110 compares the junction temperature of the chip under test 130 with the target temperature. If the junction temperature of the chip under test 130 is greater than the target temperature, the processor 110 increases the power of the cooling device 121 to enhance the cooling intensity of the chip under test 130 and/or Reduce the power of the heating device 122 to reduce the heating intensity of the chip under test 130, for example, increase the speed of the fan to accelerate heat dissipation, reduce the power of the heating rod, and reduce the heating efficiency until the junction temperature of the chip under test 130 is maintained at the target temperature. If the junction temperature of the chip under test 130 is lower than the target temperature, increase the power of the heating device 122 to increase the heating intensity of the chip under test 130 and/or reduce the power of the cooling device 121 to reduce the cooling intensity of the chip under test 130. For example, increase the power of the heating rod to accelerate heating, reduce the fan speed, and reduce heat dissipation efficiency until the junction temperature of the chip under test 130 is maintained at the target temperature.

在待测芯片130的结温维持在目标温度的情况下,将待测向量1作为参考向量,并根据上述公式,计算参考向量的功率,将参考向量的功率作为参考功率,或者确定待测向量1的功率和加热装置122的功率,将待测向量1的功率和加热装置122的功率相加,得到总功率,将总功率作为参考功率。When the junction temperature of the chip under test 130 is maintained at the target temperature, the vector to be measured 1 is used as the reference vector, and the power of the reference vector is calculated according to the above formula, and the power of the reference vector is used as the reference power, or the vector to be measured is determined 1 and the power of the heating device 122, add the power of the vector 1 to be measured and the power of the heating device 122 to obtain the total power, and use the total power as the reference power.

处理器110确定待测向量2的目标运行频率,其中,待测向量2的目标运行频率为待测向量2的可运行频率范围中的第一运行频率;其中,待测向量2在第一运行频率下的功 率最接近参考功率。The processor 110 determines the target operating frequency of the vector 2 to be measured, where the target operating frequency of the vector 2 to be measured is the first operating frequency in the operable frequency range of the vector 2 to be measured; wherein the vector 2 to be measured is in the first operating frequency range. The power at the frequency is closest to the reference power.

处理器110将待测向量2的目标运行频率和待测向量2输入待测芯片130中。The processor 110 inputs the target operating frequency of the vector 2 under test and the vector 2 under test into the chip 130 under test.

在待测芯片130执行待测向量2的过程中,处理器110从待测芯片130中的至少一个温度传感器中,获得待测芯片130的结温,以及根据待测芯片130的结温,结合PID算法、线性温控算法等,并通过控制降温装置121和/或加热装置122,动态调节待测芯片130的结温,以将待测芯片130的结温维持在目标温度。During the process of the chip under test 130 executing vector 2, the processor 110 obtains the junction temperature of the chip under test 130 from at least one temperature sensor in the chip under test 130, and combines the PID algorithm, linear temperature control algorithm, etc., and by controlling the cooling device 121 and/or the heating device 122, the junction temperature of the chip under test 130 is dynamically adjusted to maintain the junction temperature of the chip under test 130 at the target temperature.

基于执行待测向量2的原理,执行剩余的待测向量。Based on the principle of executing vector 2 to be measured, the remaining vectors to be measured are executed.

由上可知,参考功率和待测向量的目标运行频率的计算是在测试和温度控制的过程中实时计算的。在本申请的其他实施例中,参考功率和待测向量的目标运行频率也可以通过离线的方式提前计算得到。即提前计算参考功率和多个测试向量中的每个测试向量的目标运行频率,这样,在测试过程中,直接在多个测试向量的目标运行频率中获得待测向量的目标运行频率即可,无需在线计算。It can be seen from the above that the calculation of the reference power and the target operating frequency of the vector to be measured is calculated in real time during the test and temperature control process. In other embodiments of the present application, the reference power and the target operating frequency of the vector to be measured can also be calculated in advance in an offline manner. That is, the reference power and the target operating frequency of each test vector in multiple test vectors are calculated in advance. In this way, during the test process, the target operating frequency of the vector to be measured can be obtained directly from the target operating frequencies of multiple test vectors. No online calculations required.

为了增加温度控制的稳定性和精准度并确保待测芯片130温度的稳定性,在将待测向量输入待测芯片130之前,处理器110还可以确定加热装置122的功率,然后,设置加热装置122的功率,再将待测向量的目标运行频率和待测向量输入所述待测芯片130。In order to increase the stability and accuracy of temperature control and ensure the stability of the temperature of the chip under test 130, before inputting the vector to be measured into the chip under test 130, the processor 110 can also determine the power of the heating device 122, and then set the heating device 122 of power, and then input the target operating frequency of the vector to be measured and the vector to be measured into the chip 130 to be tested.

确定加热装置122的功率的方式为:若总功率与待测向量在目标运行频率下的功率的差值大于0,则加热装置122的功率为该差值,若总功率与待测向量在目标运行频率下的功率的差值不大于0,则加热装置122的功率为0。The way to determine the power of the heating device 122 is: if the difference between the total power and the power of the vector to be measured at the target operating frequency is greater than 0, then the power of the heating device 122 is the difference. If the total power and the power of the vector to be measured are at the target operating frequency If the difference in power at the operating frequency is not greater than 0, then the power of the heating device 122 is 0.

显然,在将待测向量输入待测芯片130之前,根据待测向量在目标运行频率下的功率和总功率确定加热装置122的功率,以及设置加热装置122的功率,即提前预测加热装置122的功率,并根据预测结果设置加热装置122的功率,以提前进行温度补偿,提高了温度控制的稳定性和精准度,并确保了待测芯片130的温度的稳定性。Obviously, before inputting the vector to be measured into the chip 130 under test, the power of the heating device 122 is determined based on the power and total power of the vector to be measured at the target operating frequency, and the power of the heating device 122 is set, that is, the power of the heating device 122 is predicted in advance. The power of the heating device 122 is set according to the prediction result to perform temperature compensation in advance, which improves the stability and accuracy of temperature control and ensures the stability of the temperature of the chip 130 under test.

图5为本申请实施例提供的第四种应用场景下的温度控制装置的结构示意图。在第四种应用场景中,采用的基础数据为待测芯片130的壳温,温度控制的目标为将待测芯片130的结温维持在目标温度。Figure 5 is a schematic structural diagram of a temperature control device in the fourth application scenario provided by the embodiment of the present application. In the fourth application scenario, the basic data used is the shell temperature of the chip under test 130, and the goal of temperature control is to maintain the junction temperature of the chip under test 130 at the target temperature.

图5中的温度控制装置与图4中的温度控制装置在结构上的区别在于:在图5示出的温度控制装置中增加了热阻模块180、至少一个温度传感器190。其中,热阻模块180位于待测芯片130和压块160之间,热阻模块180用于均衡待测芯片130与压块160之间的温度,以提高待测芯片130的壳温的测量准确度。热阻模块180的材料已经在上文中进行了说明,此处不再赘述。由于在该场景中,采用的基础数据为待测芯片130的壳温,因此,无需在待测芯片130中设置温度传感器,需在待测芯片130的封装体上设置至少一个温度传感器190,以通过该至少一个温度传感器190获得待测芯片130的壳温。至少一个温度传感器190与测试基板140上的印刷电路连接,处理器110通过印刷电路与至少一个温度传感器190连接,以向至少一个温度传感器190提供电源信号,并从至少一个温度传感器190中获得待测芯片130的壳温。The structural difference between the temperature control device in Figure 5 and the temperature control device in Figure 4 is that a thermal resistance module 180 and at least one temperature sensor 190 are added to the temperature control device shown in Figure 5 . Among them, the thermal resistance module 180 is located between the chip under test 130 and the pressure block 160. The thermal resistance module 180 is used to balance the temperature between the chip under test 130 and the pressure block 160 to improve the measurement accuracy of the shell temperature of the chip under test 130. Spend. The material of the thermal resistance module 180 has been described above and will not be described again here. Since in this scenario, the basic data used is the shell temperature of the chip under test 130, there is no need to set a temperature sensor in the chip under test 130. At least one temperature sensor 190 needs to be set on the package of the chip under test 130 to The shell temperature of the chip 130 under test is obtained through the at least one temperature sensor 190 . At least one temperature sensor 190 is connected to a printed circuit on the test substrate 140. The processor 110 is connected to the at least one temperature sensor 190 through the printed circuit to provide a power signal to the at least one temperature sensor 190 and obtain the desired temperature signal from the at least one temperature sensor 190. Measure the shell temperature of chip 130.

图5中的温度控制装置与图4中的温度控制装置在执行流程上的区别在于:在对待测芯片130的结温进行控制的过程中,处理器110从与待测芯片130的封装体接触的至少一 个温度传感器中获得待测芯片130的壳温,根据待测芯片130的壳温推测待测芯片130的结温,然后,根据推测的待测芯片130的结温,并通过控制降温装置121和/或加热装置122,将待测芯片130的结温维持在目标温度。The difference in the execution flow between the temperature control device in Figure 5 and the temperature control device in Figure 4 is that during the process of controlling the junction temperature of the chip under test 130, the processor 110 is in contact with the package of the chip under test 130. Obtain the shell temperature of the chip under test 130 from at least one temperature sensor, estimate the junction temperature of the chip under test 130 based on the shell temperature of the chip under test 130, and then, based on the estimated junction temperature of the chip under test 130, control the cooling device 121 and/or heating device 122 to maintain the junction temperature of the chip under test 130 at the target temperature.

由上可知,在采用的基础数据为待测芯片130的结温的场景中,用于测试待测芯片130的部件相对简单,成本较低。It can be seen from the above that in a scenario where the basic data used is the junction temperature of the chip under test 130, the components used to test the chip under test 130 are relatively simple and low in cost.

图6为本申请实施例提供的处理器的结构示意图。如图6所示,处理器110包括:测试向量控制电路111、温度获得电路112、测试向量发送电路113和温度补偿控制电路114。其中:测试向量控制电路111用于确定待测向量的目标运行频率,将待测向量的目标运行频率和待测向量发送至测试向量发送电路113。测试向量发送电路113用于将待测向量的目标运行频率和待测向量输入待测芯片130。温度获得电路112用于获得待测芯片130的结温或待测芯片130的壳温,并将待测芯片130的结温或待测芯片130的壳温传输至测试向量控制电路111。测试向量控制电路111还用于根据待测芯片130的结温或待测芯片130的壳温并结合目标温度生成温度控制信号,以及将温度控制信号传输至温度补偿控制电路114。温度补偿控制电路114用于响应于温度控制信号,对温度补偿装置120进行控制,例如,在温度补偿装置120为降温装置121时,增加或降低降温装置121的功率,以增强或减弱降温装置121的降温力度,再例如,在温度补偿装置120为加热装置122时,增加或降低加热装置122的功率,以增强或减弱加热装置122的加热力度。Figure 6 is a schematic structural diagram of a processor provided by an embodiment of the present application. As shown in FIG. 6 , the processor 110 includes: a test vector control circuit 111 , a temperature acquisition circuit 112 , a test vector sending circuit 113 and a temperature compensation control circuit 114 . Among them: the test vector control circuit 111 is used to determine the target operating frequency of the vector to be measured, and send the target operating frequency of the vector to be measured and the vector to be measured to the test vector sending circuit 113. The test vector sending circuit 113 is used to input the target operating frequency of the vector to be tested and the vector to be tested into the chip under test 130 . The temperature acquisition circuit 112 is used to obtain the junction temperature of the chip under test 130 or the shell temperature of the chip under test 130 , and transmit the junction temperature of the chip under test 130 or the shell temperature of the chip under test 130 to the test vector control circuit 111 . The test vector control circuit 111 is also used to generate a temperature control signal based on the junction temperature of the chip under test 130 or the shell temperature of the chip under test 130 combined with the target temperature, and transmit the temperature control signal to the temperature compensation control circuit 114 . The temperature compensation control circuit 114 is used to control the temperature compensation device 120 in response to the temperature control signal. For example, when the temperature compensation device 120 is the cooling device 121, increase or decrease the power of the cooling device 121 to strengthen or weaken the cooling device 121. For another example, when the temperature compensation device 120 is the heating device 122, the power of the heating device 122 is increased or decreased to enhance or weaken the heating intensity of the heating device 122.

需要说明的是,上述关于处理器110的说明仅为示例性的,并不用于限定本实施例。It should be noted that the above description of the processor 110 is only exemplary and is not intended to limit this embodiment.

本申请还提供了一种温度控制方法,如图7所示,该温度控制方法包括:701.将待测向量的目标运行频率和所述待测向量输入待测芯片。702.在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,通过控制温度补偿装置,对所述待测芯片的结温进行控制;其中,所述目标运行频率根据参考功率确定,所述待测向量为所述待测芯片的多个测试向量中的任一个,所述参考功率用于指示所述待测向量的功率的波动基准。This application also provides a temperature control method, as shown in Figure 7. The temperature control method includes: 701. Input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested. 702. In the process of the chip under test executing the vector under test at the target operating frequency, control the junction temperature of the chip under test by controlling the temperature compensation device; wherein the target operating frequency It is determined according to the reference power that the vector to be measured is any one of multiple test vectors of the chip under test, and the reference power is used to indicate the fluctuation standard of the power of the vector to be measured.

在一种可能的实现方式中,所述对所述待测芯片的结温进行控制包括:将所述待测芯片的结温控制在目标温度之下;其中,所述目标温度根据所述待测向量所属的测试项目确定。In a possible implementation, the controlling the junction temperature of the chip under test includes: controlling the junction temperature of the chip under test below a target temperature; wherein the target temperature is determined according to the The test item to which the measurement vector belongs is determined.

在一种可能的实现方式中,若所述待测向量的默认功率小于或等于所述参考功率,则所述目标运行频率为所述待测向量的默认运行频率;若所述待测向量的默认功率大于所述参考功率,则所述目标运行频率为所述待测向量的可运行频率范围中最小的运行频率;其中,所述待测向量的默认功率为所述待测向量在所述默认运行频率下的功率,所述待测向量的默认运行频率为所述待测向量的可运行频率范围中的一个运行频率。In a possible implementation, if the default power of the vector to be measured is less than or equal to the reference power, the target operating frequency is the default operating frequency of the vector to be measured; if the default power of the vector to be measured is If the default power is greater than the reference power, then the target operating frequency is the smallest operating frequency in the operable frequency range of the vector to be measured; wherein, the default power of the vector to be measured is the vector to be measured in the The power at the default operating frequency. The default operating frequency of the vector to be measured is an operating frequency in the operable frequency range of the vector to be measured.

在一种可能的实现方式中,所述温度补偿装置包括降温装置;所述将待测向量的目标运行频率和所述待测向量输入待测芯片包括:若所述待测向量在所述目标运行频率下的功率大于所述参考功率,则增加的所述降温装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;若所述待测向量在所述目标运行频率下的功率小于或者等于所述参考功率,则将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片。In a possible implementation, the temperature compensation device includes a cooling device; inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be measured includes: if the vector to be measured is in the target If the power at the operating frequency is greater than the reference power, increase the power of the cooling device, and input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested; if the vector to be measured is If the power of the measured vector at the target operating frequency is less than or equal to the reference power, then the target operating frequency of the vector to be measured and the vector to be measured are input to the chip to be measured.

在一种可能的实现方式中,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个。In a possible implementation, the reference power is the power of a reference vector, and the reference vector is one of multiple test vectors of the chip under test.

在一种可能的实现方式中,所述对所述待测芯片的结温进行控制包括:将所述待测芯片的结温维持在目标温度;其中,所述目标温度根据所述待测向量所属的测试项目确定。In a possible implementation, the controlling the junction temperature of the chip under test includes: maintaining the junction temperature of the chip under test at a target temperature; wherein the target temperature is determined according to the vector under test The test project to which it belongs is determined.

在一种可能的实现方式中,所述目标运行频率为所述待测向量的可运行频率范围中的第一运行频率;其中,所述待测向量在所述第一运行频率下的功率最接近所述参考功率。In a possible implementation, the target operating frequency is the first operating frequency in the operable frequency range of the vector to be measured; wherein the power of the vector to be measured at the first operating frequency is the highest. close to the reference power.

在一种可能的实现方式中,所述温度补偿装置包括加热装置;所述将待测向量的目标运行频率和所述待测向量输入待测芯片包括:设置所述加热装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;其中,所述加热装置的功率根据所述待测向量在所述目标运行频率下的功率和总功率确定;所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。In a possible implementation, the temperature compensation device includes a heating device; inputting the target operating frequency of the vector to be measured and the vector to be measured into the chip to be measured includes: setting the power of the heating device, and, The target operating frequency of the vector to be measured and the vector to be measured are input into the chip to be measured; wherein the power of the heating device is determined based on the power and total power of the vector to be measured at the target operating frequency. ; The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature.

在一种可能的实现方式中,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个;或者所述参考功率为总功率,其中,所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。In a possible implementation, the reference power is the power of a reference vector, and the reference vector is one of multiple test vectors of the chip under test; or the reference power is the total power, where The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature.

在一种可能的实现方式中,所述通过控制温度补偿装置,对所述待测芯片的结温进行控制包括:从与所述待测芯片的封装体接触的至少一个温度传感器中获得所述待测芯片的壳温;根据所述待测芯片的壳温,并通过控制温度补偿装置,对所述待测芯片的结温进行控制;或者从所述待测芯片中的至少一个温度传感器中获得所述待测芯片的结温;根据所述待测芯片的结温,并通过控制温度补偿装置,对所述待测芯片的结温进行控制。In a possible implementation, controlling the junction temperature of the chip under test by controlling the temperature compensation device includes: obtaining the temperature sensor from at least one temperature sensor in contact with the package of the chip under test. The shell temperature of the chip under test; controlling the junction temperature of the chip under test according to the shell temperature of the chip under test and by controlling the temperature compensation device; or from at least one temperature sensor in the chip under test Obtain the junction temperature of the chip under test; control the junction temperature of the chip under test according to the junction temperature of the chip under test and by controlling the temperature compensation device.

本申请的上述温度控制方法的实现原理和技术效果已经在上文中进行了说明,此处不再赘述。The implementation principles and technical effects of the above temperature control method of the present application have been explained above and will not be described again here.

本申请还提供一种计算机可读存储介质,计算机存储介质中存储有计算机程序,所述计算机程序在计算机或处理器上被执行时,使得所述计算机或处理器执行上述任一种方法实施例的技术方案。This application also provides a computer-readable storage medium. A computer program is stored in the computer storage medium. When the computer program is executed on a computer or processor, it causes the computer or processor to execute any of the above method embodiments. technical solutions.

本申请还提供一种计算机程序产品,当所述计算机程序被计算机执行时,使计算机或处理器执行上述任一种方法实施例的技术方案。This application also provides a computer program product, which when the computer program is executed by a computer, causes the computer or processor to execute the technical solutions of any of the above method embodiments.

本申请还提供一种电子设备,包括上文所述的温度控制装置。The present application also provides an electronic device, including the temperature control device described above.

本申请还提供一种芯片,包括处理器和存储器,所述处理器用于执行上述任一种方法实施例的技术方案。This application also provides a chip, which includes a processor and a memory. The processor is configured to execute the technical solutions of any of the above method embodiments.

进一步地,所述芯片还可以包括存储器和通信接口。所述通信接口可以是输入/输出接口、管脚或输入/输出电路等。Further, the chip may also include a memory and a communication interface. The communication interface may be an input/output interface, a pin or an input/output circuit, etc.

在实现过程中,上述方法实施例的各步骤可以通过网卡中的硬件的集成逻辑电路或者软件形式的指令完成。处理器可以是通用处理器、数字信号处理器(digital signal processor,DSP)、特定应用集成电路(application-specific integrated circuit,ASIC)、现场可编程门阵列(field programmable gate array,FPGA)或其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。通用处理器可以是微处理器或者该处理器也可以是任何常规的处理器等。本申请实施例公开的方法的步骤可以直接体现为硬件编码处理器执行完成,或者用 编码处理器中的硬件及软件模块组合执行完成。软件模块可以位于随机存储器,闪存、只读存储器,可编程只读存储器或者电可擦写可编程存储器、寄存器等本领域成熟的存储介质中。该存储介质位于存储器,处理器读取存储器中的信息,结合其硬件完成上述方法的步骤。During the implementation process, each step of the above method embodiment can be completed through the integrated logic circuit of the hardware in the network card or instructions in the form of software. The processor may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), or other Programmed logic devices, discrete gate or transistor logic devices, discrete hardware components. A general-purpose processor may be a microprocessor or the processor may be any conventional processor, etc. The steps of the methods disclosed in the embodiments of this application can be directly implemented by a hardware encoding processor, or executed by a combination of hardware and software modules in the encoding processor. The software module can be located in random access memory, flash memory, read-only memory, programmable read-only memory or electrically erasable programmable memory, registers and other mature storage media in this field. The storage medium is located in the memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

上述各实施例中提及的存储器可以是易失性存储器或非易失性存储器,或可包括易失性和非易失性存储器两者。其中,非易失性存储器可以是只读存储器(read-only memory,ROM)、可编程只读存储器(programmable ROM,PROM)、可擦除可编程只读存储器(erasable PROM,EPROM)、电可擦除可编程只读存储器(electrically EPROM,EEPROM)或闪存。易失性存储器可以是随机存取存储器(random access memory,RAM),其用作外部高速缓存。通过示例性但不是限制性说明,许多形式的RAM可用,例如静态随机存取存储器(static RAM,SRAM)、动态随机存取存储器(dynamic RAM,DRAM)、同步动态随机存取存储器(synchronous DRAM,SDRAM)、双倍数据速率同步动态随机存取存储器(double data rate SDRAM,DDR SDRAM)、增强型同步动态随机存取存储器(enhanced SDRAM,ESDRAM)、同步连接动态随机存取存储器(synchlink DRAM,SLDRAM)和直接内存总线随机存取存储器(direct rambus RAM,DR RAM)。应注意,本文描述的系统和方法的存储器旨在包括但不限于这些和任意其它适合类型的存储器。The memory mentioned in the above embodiments may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory can be read-only memory (ROM), programmable ROM (PROM), erasable programmable read-only memory (erasable PROM, EPROM), electrically removable memory. Erase programmable read-only memory (electrically EPROM, EEPROM) or flash memory. Volatile memory may be random access memory (RAM), which is used as an external cache. By way of illustration, but not limitation, many forms of RAM are available, such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (synchronous DRAM, SDRAM), double data rate synchronous dynamic random access memory (double data rate SDRAM, DDR SDRAM), enhanced synchronous dynamic random access memory (enhanced SDRAM, ESDRAM), synchronous link dynamic random access memory (synchlink DRAM, SLDRAM) ) and direct memory bus random access memory (direct rambus RAM, DR RAM). It should be noted that the memory of the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

本领域普通技术人员可以意识到,结合本文中所公开的实施例描述的各示例的单元及算法步骤,能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行,取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使用不同方法来实现所描述的功能,但是这种实现不应认为超出本申请的范围。Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented with electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Skilled artisans may implement the described functionality using different methods for each specific application, but such implementations should not be considered beyond the scope of this application.

所属领域的技术人员可以清楚地了解到,为描述的方便和简洁,上述描述的系统、装置和单元的具体工作过程,可以参考前述方法实施例中的对应过程,在此不再赘述。Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, devices and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be described again here.

在本申请所提供的几个实施例中,应该理解到,所揭露的系统、装置和方法,可以通过其它的方式实现。例如,以上所描述的装置实施例仅仅是示意性的,例如,所述单元的划分,仅仅为一种逻辑功能划分,实际实现时可以有另外的划分方式,例如多个单元或组件可以结合或者可以集成到另一个系统,或一些特征可以忽略,或不执行。另一点,所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口,装置或单元的间接耦合或通信连接,可以是电性,机械或其它的形式。In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only illustrative. For example, the division of the units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or can be integrated into another system, or some features can be ignored, or not implemented. On the other hand, the coupling or direct coupling or communication connection between each other shown or discussed may be through some interfaces, and the indirect coupling or communication connection of the devices or units may be in electrical, mechanical or other forms.

所述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物理单元,即可以位于一个地方,或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

另外,在本申请各个实施例中的各功能单元可以集成在一个处理单元中,也可以是各个单元单独物理存在,也可以两个或两个以上单元集成在一个单元中。In addition, each functional unit in each embodiment of the present application can be integrated into one processing unit, each unit can exist physically alone, or two or more units can be integrated into one unit.

所述功能如果以软件功能单元的形式实现并作为独立的产品销售或使用时,可以存储在一个计算机可读取存储介质中。基于这样的理解,本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来,该计算机软件产品存储在一个存储介质中,包括若干指令用以使得一台计算机设备(个人计算机,服务器,或者网络设备等)执行本申请各个实施例所述方法的全部或部分步骤。而前述的 存储介质包括:U盘、移动硬盘、只读存储器(read-only memory,ROM)、随机存取存储器(random access memory,RAM)、磁碟或者光盘等各种可以存储程序代码的介质。If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the existing technology or the part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in various embodiments of this application. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), magnetic disk or optical disk and other media that can store program code. .

以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application. should be covered by the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (24)

一种温度控制方法,其特征在于,包括:A temperature control method, characterized by including: 将待测向量的目标运行频率和所述待测向量输入待测芯片;Input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested; 在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,通过控制温度补偿装置,对所述待测芯片的结温进行控制;In the process of the chip under test executing the vector under test at the target operating frequency, the junction temperature of the chip under test is controlled by controlling a temperature compensation device; 其中,所述目标运行频率根据参考功率确定,所述待测向量为所述待测芯片的多个测试向量中的任一个,所述参考功率用于指示所述待测向量的功率的波动基准。Wherein, the target operating frequency is determined based on a reference power, the vector to be measured is any one of multiple test vectors of the chip under test, and the reference power is used to indicate a fluctuation benchmark of the power of the vector to be measured. . 根据权利要求1所述的方法,其特征在于,所述对所述待测芯片的结温进行控制包括:The method of claim 1, wherein controlling the junction temperature of the chip under test includes: 将所述待测芯片的结温控制在目标温度之下;Control the junction temperature of the chip under test below the target temperature; 其中,所述目标温度根据所述待测向量所属的测试项目确定。Wherein, the target temperature is determined according to the test item to which the vector to be measured belongs. 根据权利要求2所述的方法,其特征在于,The method according to claim 2, characterized in that: 若所述待测向量的默认功率小于或等于所述参考功率,则所述目标运行频率为所述待测向量的默认运行频率;If the default power of the vector to be measured is less than or equal to the reference power, then the target operating frequency is the default operating frequency of the vector to be measured; 若所述待测向量的默认功率大于所述参考功率,则所述目标运行频率为所述待测向量的可运行频率范围中最小的运行频率;If the default power of the vector to be measured is greater than the reference power, the target operating frequency is the smallest operating frequency in the operable frequency range of the vector to be measured; 其中,所述待测向量的默认功率为所述待测向量在所述默认运行频率下的功率,所述待测向量的默认运行频率为所述待测向量的可运行频率范围中的一个运行频率。Wherein, the default power of the vector to be measured is the power of the vector to be measured at the default operating frequency, and the default operating frequency of the vector to be measured is one of the operable frequency ranges of the vector to be measured. frequency. 根据权利要求2或3所述的方法,其特征在于,所述温度补偿装置包括降温装置;The method according to claim 2 or 3, characterized in that the temperature compensation device includes a cooling device; 所述将待测向量的目标运行频率和所述待测向量输入待测芯片包括:The input of the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested includes: 若所述待测向量在所述目标运行频率下的功率大于所述参考功率,则增加的所述降温装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;If the power of the vector to be measured at the target operating frequency is greater than the reference power, increase the power of the cooling device, and input the target operating frequency of the vector to be measured and the vector to be measured. The chip to be tested; 若所述待测向量在所述目标运行频率下的功率小于或者等于所述参考功率,则将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片。If the power of the vector to be measured at the target operating frequency is less than or equal to the reference power, the target operating frequency of the vector to be measured and the vector to be measured are input into the chip to be measured. 根据权利要求2~4中任一项所述的方法,其特征在于,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个。The method according to any one of claims 2 to 4, characterized in that the reference power is the power of a reference vector, and the reference vector is one of a plurality of test vectors of the chip under test. 根据权利要求1所述的方法,其特征在于,所述对所述待测芯片的结温进行控制包括:The method of claim 1, wherein controlling the junction temperature of the chip under test includes: 将所述待测芯片的结温维持在目标温度;Maintain the junction temperature of the chip under test at the target temperature; 其中,所述目标温度根据所述待测向量所属的测试项目确定。Wherein, the target temperature is determined according to the test item to which the vector to be measured belongs. 根据权利要求6所述的方法,其特征在于,所述目标运行频率为所述待测向量的可运行频率范围中的第一运行频率;The method according to claim 6, wherein the target operating frequency is the first operating frequency in the operable frequency range of the vector to be measured; 其中,所述待测向量在所述第一运行频率下的功率最接近所述参考功率。Wherein, the power of the vector to be measured at the first operating frequency is closest to the reference power. 根据权利要求6或7所述的方法,其特征在于,所述温度补偿装置包括加热装置;The method according to claim 6 or 7, characterized in that the temperature compensation device includes a heating device; 所述将待测向量的目标运行频率和所述待测向量输入待测芯片包括:The input of the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested includes: 设置所述加热装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;Set the power of the heating device, and input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested; 其中,所述加热装置的功率根据所述待测向量在所述目标运行频率下的功率和总功率确定;Wherein, the power of the heating device is determined based on the power of the vector to be measured at the target operating frequency and the total power; 所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature. 根据权利要求6~8中任一项所述的方法,其特征在于,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个;或者The method according to any one of claims 6 to 8, characterized in that the reference power is the power of a reference vector, and the reference vector is one of a plurality of test vectors of the chip under test; or 所述参考功率为总功率,其中,所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。The reference power is the total power, where the total power is the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature. sum of power. 根据权利要求1~9中任一项所述的方法,其特征在于,所述通过控制温度补偿装置,对所述待测芯片的结温进行控制包括:The method according to any one of claims 1 to 9, wherein controlling the junction temperature of the chip under test by controlling a temperature compensation device includes: 从与所述待测芯片的封装体接触的至少一个温度传感器中获得所述待测芯片的壳温;Obtain the case temperature of the chip under test from at least one temperature sensor in contact with the package of the chip under test; 根据所述待测芯片的壳温,并通过控制温度补偿装置,对所述待测芯片的结温进行控制;或者Control the junction temperature of the chip under test according to the shell temperature of the chip under test and by controlling the temperature compensation device; or 从所述待测芯片中的至少一个温度传感器中获得所述待测芯片的结温;Obtain the junction temperature of the chip under test from at least one temperature sensor in the chip under test; 根据所述待测芯片的结温,并通过控制温度补偿装置,对所述待测芯片的结温进行控制。The junction temperature of the chip under test is controlled according to the junction temperature of the chip under test and by controlling the temperature compensation device. 一种温度控制装置,其特征在于,包括:处理器和温度补偿装置;其中,A temperature control device, characterized by including: a processor and a temperature compensation device; wherein, 所述处理器,用于将待测向量的目标运行频率和所述待测向量输入待测芯片,以及,在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,通过控制温度补偿装置,对所述待测芯片的结温进行控制;The processor is configured to input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested, and in the process of the chip under test executing the vector to be measured at the target operating frequency. , by controlling the temperature compensation device, the junction temperature of the chip under test is controlled; 所述温度补偿装置,用于对所述待测芯片的结温进行补偿;The temperature compensation device is used to compensate the junction temperature of the chip under test; 所述目标运行频率根据参考功率确定,所述待测向量为所述待测芯片的多个测试向量中的任一个,所述参考功率用于指示所述待测向量的功率的波动基准。The target operating frequency is determined based on a reference power. The vector to be measured is any one of multiple test vectors of the chip to be tested. The reference power is used to indicate a fluctuation benchmark of the power of the vector to be measured. 根据权利要求11所述的装置,其特征在于,所述处理器具体用于将所述待测芯 片的结温控制在目标温度之下;The device according to claim 11, wherein the processor is specifically configured to control the junction temperature of the chip under test below a target temperature; 其中,所述目标温度根据所述待测向量所属的测试项目确定。Wherein, the target temperature is determined according to the test item to which the vector to be measured belongs. 根据权利要求12所述的装置,其特征在于,The device according to claim 12, characterized in that: 若所述待测向量的默认功率小于或等于所述参考功率,则所述目标运行频率为所述待测向量的默认运行频率;If the default power of the vector to be measured is less than or equal to the reference power, then the target operating frequency is the default operating frequency of the vector to be measured; 若所述待测向量的默认功率大于所述参考功率,则所述目标运行频率为所述待测向量的可运行频率范围中最小的运行频率;If the default power of the vector to be measured is greater than the reference power, the target operating frequency is the smallest operating frequency in the operable frequency range of the vector to be measured; 其中,所述待测向量的默认功率为所述待测向量在所述默认运行频率下的功率,所述待测向量的默认运行频率为所述待测向量的可运行频率范围中的一个运行频率。Wherein, the default power of the vector to be measured is the power of the vector to be measured at the default operating frequency, and the default operating frequency of the vector to be measured is one of the operable frequency ranges of the vector to be measured. frequency. 根据权利要求12或13所述的装置,其特征在于,所述温度补偿装置包括降温装置;The device according to claim 12 or 13, characterized in that the temperature compensation device includes a cooling device; 所述处理器,具体用于若所述待测向量在所述目标运行频率下的功率大于所述参考功率,则增加的所述降温装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;若所述待测向量在所述目标运行频率下的功率小于或者等于所述参考功率,则将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片。The processor is specifically configured to increase the power of the cooling device if the power of the vector to be measured at the target operating frequency is greater than the reference power, and to operate the target of the vector to be measured. The frequency and the vector to be measured are input into the chip to be measured; if the power of the vector to be measured at the target operating frequency is less than or equal to the reference power, the target operating frequency of the vector to be measured and the vector to be measured are The vector to be tested is input into the chip to be tested. 根据权利要求12~14中任一项所述的装置,其特征在于,所述参考功率为参考向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个。The device according to any one of claims 12 to 14, wherein the reference power is the power of a reference vector, and the reference vector is one of a plurality of test vectors of the chip under test. 根据权利要求11所述的装置,其特征在于,所述处理器具体用于将所述待测芯片的结温维持在目标温度;The device according to claim 11, wherein the processor is specifically configured to maintain the junction temperature of the chip under test at a target temperature; 其中,所述目标温度根据所述待测向量所属的测试项目确定。Wherein, the target temperature is determined according to the test item to which the vector to be measured belongs. 根据权利要求16所述的装置,其特征在于,所述目标运行频率为所述待测向量的可运行频率范围中的第一运行频率;The device according to claim 16, wherein the target operating frequency is the first operating frequency in the operable frequency range of the vector to be measured; 其中,所述待测向量在所述第一运行频率下的功率最接近所述参考功率。Wherein, the power of the vector to be measured at the first operating frequency is closest to the reference power. 根据权利要求16或17所述的装置,其特征在于,所述温度补偿装置包括加热装置;The device according to claim 16 or 17, characterized in that the temperature compensation device includes a heating device; 所述处理器,具体用于设置所述加热装置的功率,以及,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片;The processor is specifically configured to set the power of the heating device, and input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested; 其中,所述加热装置的功率根据所述待测向量在所述目标运行频率下的功率和总功率确定;Wherein, the power of the heating device is determined based on the power of the vector to be measured at the target operating frequency and the total power; 所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。The total power is the sum of the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature. 根据权利要求16~18中任一项所述的装置,其特征在于,所述参考功率为参考 向量的功率,所述参考向量为所述待测芯片的多个测试向量中的一个;或者The device according to any one of claims 16 to 18, wherein the reference power is the power of a reference vector, and the reference vector is one of a plurality of test vectors of the chip under test; or 所述参考功率为总功率,其中,所述总功率为在所述待测芯片的结温维持在所述目标温度时,所述待测芯片正在运行的测试向量的功率和所述加热装置的功率之和。The reference power is the total power, where the total power is the power of the test vector that the chip under test is running and the power of the heating device when the junction temperature of the chip under test is maintained at the target temperature. sum of power. 根据权利要求11~19中任一项所述的装置,其特征在于,所述待测芯片中设置有至少一个温度传感器;The device according to any one of claims 11 to 19, characterized in that at least one temperature sensor is provided in the chip to be tested; 所述装置还包括:测试基板、探针座、压块和散热器,其中:The device also includes: a test substrate, a probe holder, a pressure block and a heat sink, wherein: 所述探针座,设置在所述测试基板上,用于放置所述待测芯片,并通过所述探针座中的探针将所述待测芯片的管脚与所述测试基板进行电气连接;The probe holder is arranged on the test substrate for placing the chip under test, and electrically conducts electrical connection between the pins of the chip under test and the test substrate through the probes in the probe holder. connect; 所述压块,位于所述待测芯片上,用于向所述待测芯片施加压力;The pressure block is located on the chip to be tested and is used to apply pressure to the chip to be tested; 所述散热器,设置在所述压块上,用于带出所述待测芯片的温度;The heat sink is provided on the pressure block and is used to bring out the temperature of the chip to be tested; 所述处理器,具体用于通过所述测试基板,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片,以及,在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,根据从所述至少一个温度传感器中获得的所述待测芯片的结温,并通过控制所述温度补偿装置,对所述待测芯片的结温进行控制。The processor is specifically configured to input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested through the test substrate, and, when the chip to be tested is running at the target During the process of executing the vector to be measured at a frequency, the junction temperature of the chip to be measured is adjusted according to the junction temperature of the chip to be measured obtained from the at least one temperature sensor and by controlling the temperature compensation device. Take control. 根据权利要求11~19中任一项所述的装置,其特征在于,所述装置还包括:测试基板、探针座、压块、热阻模块、至少一个温度传感器和散热器,其中:The device according to any one of claims 11 to 19, characterized in that the device further includes: a test substrate, a probe holder, a pressure block, a thermal resistance module, at least one temperature sensor and a heat sink, wherein: 所述探针座,设置在所述测试基板上,用于放置所述待测芯片,并通过所述探针座中的探针将所述待测芯片的管脚与所述测试基板进行电气连接;The probe holder is arranged on the test substrate for placing the chip under test, and electrically conducts electrical connection between the pins of the chip under test and the test substrate through the probes in the probe holder. connect; 所述热阻模块,位于所述待测芯片上,用于均衡所述待测芯片与所述压块之间的温度;The thermal resistance module is located on the chip to be tested and is used to balance the temperature between the chip to be tested and the pressure block; 所述压块,位于所述热阻模块上,用于向所述待测芯片施加压力;The pressure block is located on the thermal resistance module and is used to apply pressure to the chip under test; 所述至少一个温度传感器,与所述待测芯片的封装体接触,用于测量所述待测芯片的壳温;The at least one temperature sensor is in contact with the package of the chip under test and used to measure the shell temperature of the chip under test; 所述散热器,设置在所述压块上,用于带出所述待测芯片的温度;The heat sink is provided on the pressure block and is used to bring out the temperature of the chip to be tested; 所述处理器,具体用于通过所述测试基板,将所述待测向量的目标运行频率和所述待测向量输入所述待测芯片,以及,在所述待测芯片在所述目标运行频率下执行所述待测向量的过程中,根据从所述至少一个温度传感器中获得的所述待测芯片的壳温,并通过控制所述温度补偿装置,对所述待测芯片的结温进行控制。The processor is specifically configured to input the target operating frequency of the vector to be measured and the vector to be measured into the chip to be tested through the test substrate, and, when the chip to be tested is running at the target During the process of executing the vector under test at a frequency, the junction temperature of the chip under test is adjusted according to the shell temperature of the chip under test obtained from the at least one temperature sensor and by controlling the temperature compensation device. Take control. 一种计算机可读存储介质,包括计算机程序,所述计算机程序在计算机或处理器上被执行时,使得所述计算机或处理器执行权利要求1~10中任一项所述的方法。A computer-readable storage medium includes a computer program. When the computer program is executed on a computer or processor, the computer or processor causes the computer or processor to execute the method described in any one of claims 1 to 10. 一种计算机程序,当所述计算机程序被计算机或处理器执行时,用于执行权利要求1~10中任一项所述的方法。A computer program, when the computer program is executed by a computer or processor, is used to perform the method described in any one of claims 1 to 10. 一种电子设备,包括权利要求11~21中任一项所述的温度控制装置。An electronic device including the temperature control device according to any one of claims 11 to 21.
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