CN117059727A - Heat-absorbing micro LED and preparation method thereof - Google Patents
Heat-absorbing micro LED and preparation method thereof Download PDFInfo
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- CN117059727A CN117059727A CN202311316513.9A CN202311316513A CN117059727A CN 117059727 A CN117059727 A CN 117059727A CN 202311316513 A CN202311316513 A CN 202311316513A CN 117059727 A CN117059727 A CN 117059727A
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- 239000010410 layer Substances 0.000 claims abstract description 172
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 22
- 239000012790 adhesive layer Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 239000011358 absorbing material Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004020 luminiscence type Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000003631 wet chemical etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
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- 238000002294 plasma sputter deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention relates to the technical field of display chips and discloses a heat-absorbing micro LED and a preparation method thereof, wherein the heat-absorbing micro LED comprises a driving substrate, a plurality of grooves which are arranged in an array are formed in the surface of the driving substrate, a first heat absorption layer is filled in the grooves of the driving substrate, metal contacts are arranged in the middle of the grooves of the driving substrate, a plurality of light-emitting units are arranged at positions, corresponding to the metal contacts, on the surface of the driving substrate, the light-emitting units are connected with the driving substrate through adhesive layers, each light-emitting unit comprises an epitaxial layer, a passivation layer is deposited on the outer wall of the epitaxial layer, a light outlet is formed in the middle of the passivation layer, corresponding to the top of the epitaxial layer, a second heat absorption layer is deposited on the outer wall of the passivation layer, and an N electrode layer is deposited on the outer wall of the second heat absorption layer. According to the invention, the heat absorption layer is prefabricated on the side surface and the bottom of the Micro LED light-emitting unit to absorb the heat energy of the LED in operation, so that the temperature rise effect of the LED device in operation is reduced, and the attenuation aging failure risk of the device is improved.
Description
Technical Field
The invention belongs to the technical field of display chips, and particularly relates to a heat-absorbing micro LED and a preparation method thereof.
Background
The Micro LED has the full English name of Micro Light Emitting Diode, chinese called Micro LED, and can be written as mu LED, generally refers to a technology of forming a display array by using LED light emitting units with the size of 1-60 um, the size of the Micro LED is 1/10 of that of human hair, and the Micro LED has the characteristics of no need of backlight, high photoelectric conversion efficiency, ns-level response time and the like, and is a technology of thinning, microminiaturizing and arraying the LEDs to ensure that the volume of the LEDs reaches 1% of that of main stream LEDs, and the pixel point distance reaches micrometers from millimeter.
The Micro LED substrate is manufactured into an LED display driving circuit by using a normal CMOS integrated circuit manufacturing process, and then an LED array is manufactured on the integrated circuit by using an MOCVD machine, so that a Micro display screen, namely a reduced version of the LED display screen, is realized. Is the next generation display technology after OLED.
Micro LED display panels generally include a plurality of LED pixels (i.e., light emitting units), and currently, micro LEDs are etched to remove continuous functional epitaxial layers to obtain a plurality of fully isolated functional pixels. However, the micro LED light-emitting table surface only has a light-emitting surface, and the side edges and the bottom of the light-emitting surface cannot absorb and release emergent light, so that heat energy is generated to influence the performance of the device.
Disclosure of Invention
In order to solve the defects in the background art, the invention aims to provide the heat absorption Micro LED and the preparation method thereof, and the heat absorption layer is prefabricated on the side surface and the bottom of the light emitting unit of the Micro LED to absorb the heat energy of the LED during working, so that the temperature rise effect of the LED device during working is reduced, and the attenuation aging failure risk of the device is improved.
The aim of the invention can be achieved by the following technical scheme:
the utility model provides a heat absorption micro LED, including the drive base plate, the recess that a plurality of arrays set up is offered on the drive base plate surface, the recess intussuseption of drive base plate is filled with first heat sink, be equipped with the metal contact in the middle of the recess of drive base plate, drive base plate surface corresponds metal contact department and is equipped with a plurality of luminescence units, connect through the adhesive layer between luminescence unit and the drive base plate, luminescence unit includes the epitaxial layer, the epitaxial layer is step structure, epitaxial layer outer wall deposit passivation layer, the light outlet has been offered in the middle of the passivation layer corresponds epitaxial layer top, passivation layer outer wall deposit second heat sink, second heat sink outer wall deposit N electrode layer.
Preferably, the drive substrate is a silicon-based CMOS backplate or TFT field effect transistor display substrate.
Preferably, the epitaxial layer has a trapezoid, rectangular or inverted trapezoid structure in cross section, and comprises a first semiconductor layer, a multiple quantum well layer and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are one or more of ZnSe, znO, gaN, alN, inN, inGaN, gaP, alInGaP, alGaAs.
Preferably, the metal contact is in contact with the second semiconductor layer of the epitaxial layer, the metal contact being one or more of indium, titanium, aluminum, nickel, gold, chromium or platinum.
Preferably, the passivation layer and the epitaxial layer have different refractive indexes, the light part formed by the epitaxial layer is totally reflected into the epitaxial layer by adjusting the inclination angle of the passivation layer, and the passivation layer material comprises SiO 2 、Al 2 O 3 SiN or polyimide and SU-8 photoresist.
Preferably, the first and second heat sink layer heat sink materials comprise a mixture of silica and polyethylene glycol.
Preferably, the N electrode layer is in contact with the first semiconductor layer, the N electrode layer material comprising ITO, cr, ti, pt, au, al, cu, ge and Ni.
A preparation method of an endothermic micro LED comprises the following steps:
s1, etching and patterning the surface of a driving substrate to form grooves in rectangular array arrangement, and then depositing heat absorbing materials in the grooves to form a first heat absorbing layer at the bottom;
s2, coating an adhesive layer on the surface of the driving substrate, and then depositing a metal contact in the middle of the groove of the driving substrate by adopting a photoetching stripping method;
s3, pressing the driving substrate and the epitaxial wafer, and bonding one side of the second semiconductor layer of the epitaxial wafer with the driving substrate through the adhesive layer;
s4, removing the substrate and the buffer layer of the epitaxial wafer;
s5, depositing photoresist above the first semiconductor layer of the epitaxial layer to serve as a mask protection layer, and then patterning the epitaxial layer through dry etching or wet etching to form an independent light-emitting unit;
s6, depositing a passivation layer on the outer wall of the epitaxial layer step structure through PECVD, and then carrying out open pore etching on the top of the passivation layer corresponding to the upper part of the epitaxial layer step structure to expose the light emitting surface of the LED;
s7, depositing a heat absorbing material on the outer wall of the passivation layer to prepare a second heat absorbing layer on the side edge;
and S8, manufacturing an N electrode layer on the second heat absorption layer in a photoetching, vapor plating or lift-off mode, and completing the patterning preparation of the N electrode.
Preferably, the epitaxial wafer comprises a substrate, a buffer layer and an epitaxial layer, wherein the substrate is a silicon-based substrate or a sapphire substrate, and is removed by a laser stripping method when the substrate is a sapphire substrate, and is removed by physical polishing and thinning, deep silicon etching and wet chemical etching when the substrate is a silicon-based substrate.
Preferably, in step S5, the cross-sectional structure of the etched epitaxial layer is any structure such as a rectangle, a trapezoid or an inverted trapezoid, and the projected area of the bottom of the step structure of the epitaxial layer on the driving substrate is smaller than or equal to the first heat absorption layer.
The invention has the beneficial effects that:
according to the invention, the first heat absorption layer is arranged on the driving substrate and corresponds to the first semiconductor layer of the epitaxial layer of the LED unit, and meanwhile, the first heat absorption layer is deposited outside the passivation layer of the LED unit, so that the prefabricated heat absorption layer corresponds to the light leakage position at the bottom and the side surface of the Micro LED light-emitting unit, and the heat energy of the LED during operation is absorbed, thereby reducing the temperature rise effect of the LED device during operation and improving the attenuation aging failure risk of the device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to those skilled in the art that other drawings can be obtained according to these drawings without inventive effort.
FIG. 1 is a schematic diagram of the structure of a heat absorbing micro LED of the present invention;
FIG. 2 is a schematic process flow diagram of step S1 of the present invention;
FIG. 3 is a schematic process flow diagram of step S2 of the present invention;
FIG. 4 is a schematic process flow diagram of step S3 of the present invention;
FIG. 5 is a schematic illustration of the process flow of step S4 of the present invention;
FIG. 6 is a schematic illustration of the process flow of step S5 of the present invention;
FIG. 7 is a schematic illustration of the process flow of step S6 of the present invention;
FIG. 8 is a schematic process flow diagram of step S7 of the present invention;
fig. 9 is a schematic process flow diagram of step S8 of the present invention.
In the figure: the semiconductor device comprises a 1-driving substrate, a 2-first heat absorption layer, a 3-adhesive layer, a 4-metal contact, a 5-epitaxial wafer, a 6-substrate, a 7-buffer layer, an 8-epitaxial layer, a 9-first semiconductor layer, a 10-multiple quantum well layer, an 11-second semiconductor layer, a 12-mask protection layer, a 13-passivation layer, a 14-second heat absorption layer and a 15-N electrode layer.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, the invention provides a heat absorption micro led, which comprises a driving substrate 1, wherein a plurality of grooves which are arranged in an array are formed in the surface of the driving substrate 1, a first heat absorption layer 2 is filled in the grooves of the driving substrate 1, a metal contact 4 is arranged in the middle of the grooves of the driving substrate 1, a plurality of light emitting units are arranged at the positions, corresponding to the metal contact 4, on the surface of the driving substrate 1, the light emitting units are connected with the driving substrate 1 through adhesive layers, the light emitting units comprise an epitaxial layer 8, the epitaxial layer 8 is in a step structure, a passivation layer 13 is deposited on the outer wall of the epitaxial layer 8, a light outlet is formed in the middle of the passivation layer 13, a second heat absorption layer 14 is deposited on the outer wall of the passivation layer 13, and an N electrode layer 15 is deposited on the outer wall of the second heat absorption layer 14.
The driving substrate 1 is a silicon-based CMOS backboard or a TFT field effect transistor display substrate; epitaxial layer 8The cross section of the epitaxial layer 8 is in a trapezoid, rectangular or inverted trapezoid structure, and the epitaxial layer 8 comprises a first semiconductor layer 9, a multiple quantum well layer 10 and a second semiconductor layer 11, wherein the first semiconductor layer and the second semiconductor layer are one or more of ZnSe, znO, gaN, alN, inN, inGaN, gaP, alInGaP, alGaAs; the metal contact 4 is connected and contacted with the second semiconductor layer 11 of the epitaxial layer 8 to form an LED luminous unit which can be independently driven, and the metal contact is one or more of indium, titanium, aluminum, nickel, gold, chromium or platinum; the passivation layer 13 has a refractive index different from that of the epitaxial layer, and the light formed by the epitaxial layer is totally reflected into the epitaxial layer by adjusting the inclination angle of the passivation layer, and the passivation layer material comprises SiO 2 、Al 2 O 3 SiN or polyimide and SU-8 photoresist; the first heat sink layer 2 and the second heat sink layer 14 are heat sink materials including, but not limited to, a mixture of silica and polyethylene glycol to reduce thermal energy generation; the N electrode layer 15 is in contact with the first semiconductor layer 9, and the N electrode layer 15 material includes ITO, cr, ti, pt, au, al, cu, ge and Ni.
As shown in fig. 2-9, the preparation method of the heat-absorbing micro led comprises the following steps:
s1, etching and patterning the surface of a driving substrate 1 to form grooves in rectangular array arrangement, and then depositing heat absorbing materials in the grooves to form a bottom first heat absorbing layer 2;
s2, coating an adhesive layer 3 on the surface of the driving substrate 1, and then depositing a metal contact in the middle of a groove of the driving substrate 1 by adopting a photoetching stripping method;
s3, pressing the driving substrate 1 and the epitaxial wafer 5, and bonding one side of the second semiconductor layer 11 of the epitaxial wafer 5 with the driving substrate 1 through the adhesive layer 3;
s4, removing the substrate 6 and the buffer layer 7 of the epitaxial wafer 5;
s5, depositing photoresist above the first semiconductor layer 9 of the epitaxial layer 8 to form a mask protection layer 12, and then patterning the epitaxial layer 8 by dry etching or wet etching to form an independent light-emitting unit;
s6, depositing a passivation layer 13 on the outer wall of the 8-step structure of the epitaxial layer platform through PECVD, and then carrying out open pore etching on the top of the passivation layer 13 corresponding to the upper part of the step structure of the epitaxial layer to expose the light-emitting surface of the LED;
s7, depositing a heat absorbing material on the outer wall of the passivation layer 13 to prepare a second heat absorbing layer 14 on the side;
and S8, manufacturing an N electrode layer 15 on the second heat absorption layer 14 in a photoetching, vapor deposition or lift-off mode, and completing the patterning preparation of the N electrode.
The epitaxial wafer 5 comprises a substrate 6, a buffer layer 7 and an epitaxial layer 8, wherein the substrate 6 is a silicon-based substrate or a sapphire substrate, the substrate is removed through a laser stripping method when the substrate is the sapphire substrate, and the substrate is removed through physical polishing thinning, deep silicon etching and wet chemical etching when the substrate is the silicon-based substrate.
The specific implementation of the preparation of the metal contact in the step S2 adopts photoresist to manufacture mask pattern openings, and adopts electron beam evaporation, plasma sputtering or thermal evaporation to deposit metal as the metal contact; and removing the metal except the contact hole by adopting a stripping method, so that the P pole of the subsequent epitaxial wafer is electrically connected with the driving substrate through the metal contact.
In step S5, the cross-sectional structure of the etched epitaxial layer 8 is any structure such as rectangle, trapezoid or inverted trapezoid, and the projected area of the bottom of the step structure of the epitaxial layer on the driving substrate 1 is smaller than or equal to the first heat absorption layer 2.
In the description of the present specification, the descriptions of the terms "one embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (10)
1. The utility model provides a heat absorption micro LED, its characterized in that, includes the drive base plate, the recess that a plurality of are the array setting is seted up to drive base plate surface, the first heat sink of packing in the recess of drive base plate, be equipped with the metal contact in the middle of the recess of drive base plate, drive base plate surface corresponds metal contact department and is equipped with a plurality of luminescence units, be connected through the adhesive layer between luminescence unit and the drive base plate, the luminescence unit includes the epitaxial layer, the epitaxial layer is step structure, epitaxial layer outer wall deposit passivation layer, the light outlet has been seted up in the middle of the passivation layer corresponds epitaxial layer top, passivation layer outer wall deposit second heat sink, second heat sink outer wall deposit N electrode layer.
2. The endothermic micro led of claim 1, wherein the driving substrate is a silicon-based CMOS back plate or a TFT field effect transistor display substrate.
3. The endothermic micro led of claim 1, wherein the epitaxial layer has a trapezoid, rectangle or inverted trapezoid structure in cross section, and comprises a first semiconductor layer, a multiple quantum well layer and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are one or more of ZnSe, znO, gaN, alN, inN, inGaN, gaP, alInGaP, alGaAs.
4. The endothermic micro led of claim 3, wherein the metal contact is in contact with the second semiconductor layer of the epitaxial layer, the metal contact being one or more of indium, titanium, aluminum, nickel, gold, chromium, or platinum.
5. The endothermic micro led of claim 1, wherein the passivation layer and the epitaxial layer have different refractive indexes, the light portion formed by the epitaxial layer is totally reflected inside the epitaxial layer by adjusting the inclination angle of the passivation layer, the passivation layer material comprises SiO 2 、Al 2 O 3 SiN or polyimide and SU-8 photoresist.
6. The endothermic micro led of claim 1, wherein the heat absorbing materials of the first and second heat absorbing layers comprise a mixture of silica and polyethylene glycol.
7. The endothermic micro led of claim 3, wherein the N-electrode layer is in contact with the first semiconductor layer, the N-electrode layer material comprising ITO, cr, ti, pt, au, al, cu, ge and Ni.
8. The method for preparing the heat-absorbing micro led according to any one of claims 1 to 7, comprising the steps of:
s1, etching and patterning the surface of a driving substrate to form grooves in rectangular array arrangement, and then depositing heat absorbing materials in the grooves to form a first heat absorbing layer at the bottom;
s2, coating an adhesive layer on the surface of the driving substrate, and then depositing a metal contact in the middle of the groove of the driving substrate by adopting a photoetching stripping method;
s3, pressing the driving substrate and the epitaxial wafer, and bonding one side of the second semiconductor layer of the epitaxial wafer with the driving substrate through the adhesive layer;
s4, removing the substrate and the buffer layer of the epitaxial wafer;
s5, depositing photoresist above the first semiconductor layer of the epitaxial layer to serve as a mask protection layer, and then patterning the epitaxial layer through dry etching or wet etching to form an independent light-emitting unit;
s6, depositing a passivation layer on the outer wall of the epitaxial layer step structure through PECVD, and then carrying out open pore etching on the top of the passivation layer corresponding to the upper part of the epitaxial layer step structure to expose the light emitting surface of the LED;
s7, depositing a heat absorbing material on the outer wall of the passivation layer to prepare a second heat absorbing layer on the side edge;
and S8, manufacturing an N electrode layer on the second heat absorption layer in a photoetching, vapor plating or lift-off mode, and completing the patterning preparation of the N electrode.
9. The method for preparing the heat-absorbing micro led according to claim 8, wherein the epitaxial wafer comprises a substrate, a buffer layer and an epitaxial layer, the substrate is a silicon-based substrate or a sapphire substrate, the substrate is removed by a laser lift-off method when the substrate is a sapphire substrate, and the substrate removal is realized by physical polishing thinning, deep silicon etching and wet chemical etching when the substrate is a silicon-based substrate.
10. The method for preparing the heat-absorbing micro led according to claim 8, wherein the cross-sectional structure of the epitaxial layer after etching in the step S5 is rectangular, trapezoidal or inverted trapezoidal, and the projected area of the bottom of the step structure of the epitaxial layer on the driving substrate is smaller than or equal to the first heat-absorbing layer.
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| CN202311316513.9A CN117059727A (en) | 2023-10-12 | 2023-10-12 | Heat-absorbing micro LED and preparation method thereof |
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| CN202311316513.9A CN117059727A (en) | 2023-10-12 | 2023-10-12 | Heat-absorbing micro LED and preparation method thereof |
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| CN208400876U (en) * | 2018-05-16 | 2019-01-18 | 鞍山新光台电子科技有限公司 | A kind of wafer-level package form LED lamp bead |
| CN115458666A (en) * | 2022-11-09 | 2022-12-09 | 镭昱光电科技(苏州)有限公司 | Micro LED Micro display chip and manufacturing method thereof |
| CN219267677U (en) * | 2022-06-20 | 2023-06-27 | 厦门市芯颖显示科技有限公司 | Circuit substrate, LED display device and light-emitting element |
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| US20160276319A1 (en) * | 2013-12-04 | 2016-09-22 | 3M Innovative Properties Company | Flexible light emitting semiconductor device with large area conduit |
| CN208400876U (en) * | 2018-05-16 | 2019-01-18 | 鞍山新光台电子科技有限公司 | A kind of wafer-level package form LED lamp bead |
| CN219267677U (en) * | 2022-06-20 | 2023-06-27 | 厦门市芯颖显示科技有限公司 | Circuit substrate, LED display device and light-emitting element |
| CN115458666A (en) * | 2022-11-09 | 2022-12-09 | 镭昱光电科技(苏州)有限公司 | Micro LED Micro display chip and manufacturing method thereof |
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