CN117044406A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
CN117044406A
CN117044406A CN202280022237.2A CN202280022237A CN117044406A CN 117044406 A CN117044406 A CN 117044406A CN 202280022237 A CN202280022237 A CN 202280022237A CN 117044406 A CN117044406 A CN 117044406A
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CN
China
Prior art keywords
metal plate
processing apparatus
dielectric cover
plasma processing
magnetic field
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Pending
Application number
CN202280022237.2A
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Chinese (zh)
Inventor
松尾大辅
安东靖典
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of CN117044406A publication Critical patent/CN117044406A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention aims to reduce the possibility that particles moving in a vacuum container adhere to a dielectric cover. A magnetic field introduction window (3) provided on the wall surface of a vacuum container (2) is provided with: a metal plate (31) in which a plurality of slits (311) are formed; a dielectric cover (32) covering the plurality of slits (311); a gasket (33) provided between the dielectric cover (32) and the metal plate (31); and an adhesion-preventing plate (34) provided on the metal plate (31) so as to cover at least a part of the plurality of slits (311).

Description

Plasma processing apparatus
Technical Field
The present invention relates to a plasma processing apparatus for processing an object to be processed by using plasma.
Background
A plasma processing apparatus is known which generates plasma by flowing a high-frequency current through an antenna, and uses the plasma to process an object to be processed such as a substrate. For example, the plasma processing apparatus described in patent document 1 includes: a vacuum vessel having an opening; a metal plate provided to block the opening and having a plurality of slits penetrating in a thickness direction; a plate-like dielectric cover supported in contact with the metal plate and closing the plurality of slits from the outside of the vacuum vessel; and an antenna provided outside the vacuum container so as to face the metal plate. By flowing a high-frequency current through the antenna, a high-frequency electric field and a high-frequency magnetic field are generated, and the high-frequency magnetic field is transmitted into the vacuum chamber through the dielectric cover and the slit of the metal plate. Thereby, inductively coupled plasma can be generated in the vacuum vessel.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2020-198282
Disclosure of Invention
Problems to be solved by the invention
When various treatments are performed by the plasma treatment apparatus having the above-described configuration, particles in the vacuum chamber may move and adhere to and accumulate inside the vacuum chamber, the metal plate, and the dielectric cover. For example, when the plasma processing apparatus is used as a sputtering apparatus, sputtered particles adhere to and accumulate in the dielectric cover or the like. In the case where the deposit of the sputtered particles is a conductive metal film, the metal film deposited on the dielectric cap may be in conduction with the metal plate through the slit. At this time, when a high-frequency current flows through the antenna, the metal film and the metal plate are inductively heated, and the dielectric cover is heated. Since the dielectric cover plays a role of maintaining vacuum in the vacuum vessel, it is not desirable to heat the dielectric cover. Therefore, frequent cleaning of the dielectric cover is required.
An object of an embodiment of the present invention is to realize a plasma processing apparatus and the like capable of reducing the possibility that particles such as sputtered particles moving in a vacuum chamber adhere to a dielectric cover.
Technical means for solving the problems
In order to solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: a vacuum container for accommodating an object to be processed therein; an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window provided on a wall surface of the vacuum chamber, the magnetic field introduction window being provided to introduce the high-frequency magnetic field into the vacuum chamber so as to generate plasma in the vacuum chamber, the magnetic field introduction window including: a metal plate formed with a plurality of slits; a dielectric cover covering the plurality of slits; a gasket disposed between the dielectric cover and the metal plate; and an adhesion preventing plate provided to the metal plate so as to cover at least a part of the plurality of slits.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an embodiment of the present invention, the probability of particles moving in the vacuum vessel adhering to the dielectric cap can be reduced.
Drawings
FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view schematically showing the structure of a magnetic field introduction window in the plasma processing apparatus.
FIG. 3 is a cross-sectional view taken along line A-A of FIG. 2.
Fig. 4 is a cross-sectional view taken along line B-B of fig. 2.
FIG. 5 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to another embodiment of the present invention.
FIG. 6 is a cross-sectional view taken along line C-C of FIG. 5.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail. For convenience of explanation, members having the same functions as those shown in the respective embodiments are given the same reference numerals, and the explanation thereof is omitted appropriately.
[ embodiment 1]
An embodiment of the present invention will be described with reference to fig. 1 to 4.
Structure of plasma processing apparatus 1
Fig. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus 1 according to the present embodiment. In fig. 1, the direction in which the antenna 7 extends is referred to as the X-axis direction, the direction from the vacuum chamber 2 toward the antenna 7 is referred to as the Z-axis direction, and the direction orthogonal to both the X-axis direction and the Z-axis direction is referred to as the Y-axis direction.
As shown in fig. 1, the plasma processing apparatus 1 is an apparatus that performs plasma processing on an object W1 to be processed such as a substrate using an inductively coupled plasma P1. Here, the substrate is, for example, a substrate for a flat panel display (flat panel display, FPD) such as a liquid crystal display or an organic Electroluminescence (EL) display, or a flexible substrate for a flexible display. The object W1 to be processed may be a semiconductor substrate used for various purposes. Further, the object W1 to be processed is not limited to a substrate-like shape, for example, as in a tool. The treatment to be performed on the object W1 is, for example, film formation by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method or a sputtering method, etching by plasma, ashing, removal of a coating film, or the like.
The plasma processing apparatus 1 includes a vacuum chamber 2, a magnetic field introduction window 3, an antenna 7, and a holding portion 9. A processing chamber 21 into which a gas is introduced while being evacuated is formed inside the vacuum chamber 2. The vacuum vessel 2 is, for example, a metal vessel. An opening 23 penetrating in the thickness direction is formed in a wall surface 22 (upper surface in the example of fig. 1) of the vacuum chamber 2. The vacuum vessel 2 is electrically grounded.
The gas introduced into the processing chamber 21 may be a gas corresponding to the processing content of the object W1 stored in the processing chamber 21. For example, in the case of performing the plasma CVD (Chemical Vapor Deposition) method on the object W1 to be processedIn the case of film formation, the gas is a source gas or H 2 And the like, and the diluted gas is diluted by the diluent gas. Further specifically, the source gas is SiH 4 In the case of (2), a Si film may be formed on the object W1 to be processed, and SiH may be used as the source gas 4 +NH 3 In the case of (2), a SiN film may be formed on the object W1, and SiH may be used as the source gas 4 +O 2 In the case of (2), siO can be formed on the object W1 to be processed 2 A membrane of SiF as a raw material gas 4 +N 2 In the case of (2), siN may be formed on the object W1: f film (silicon fluoride nitride film).
Structure of magnetic field leading-in window 3
Fig. 2 is a plan view showing a schematic structure of the magnetic field introduction window 3. Fig. 3 is a sectional view taken along line A-A of fig. 2, and fig. 4 is a sectional view taken along line B-B of fig. 2. In fig. 2 to 4, the antenna 7 is omitted. In fig. 2, a dielectric cover 32 described later is omitted. Omitted components are indicated by dash-dot lines.
The magnetic field introduction window 3 includes a metal plate 31 and a dielectric cover 32. The magnetic field introduction window 3 introduces the high-frequency magnetic field generated from the antenna 7 into the processing chamber 21 in order to generate plasma in the processing chamber 21. A metal plate 31 and a dielectric cap 32 are provided in this order in the Z-axis direction.
The metal plate 31 is provided on the wall surface 22 of the vacuum chamber 2 so as to close the opening 23. The metal plate 31 is formed with a plurality of slits 311 penetrating the metal plate 31 in the Z-axis direction. The plurality of slits 311 extend in the Y-axis direction and are aligned in the X-axis direction. The metal plate 31 is disposed substantially parallel to the surface of the object W1.
The dielectric cover 32 is provided from the outside of the vacuum chamber 2 so as to cover the plurality of slits 311. The dielectric cover 32 is entirely made of a dielectric substance and has a flat plate shape. The material constituting the dielectric cap 32 may be ceramics such as alumina, silicon carbide, or silicon nitride, inorganic materials such as quartz glass, alkali-free glass, or resin materials such as fluorine resins such as Teflon (registered trademark).
In the present embodiment, the magnetic field introduction window 3 further includes a gasket 33 and an adhesion preventing plate 34. A gasket 33 is provided between the metal plate 31 and the dielectric cover 32. The gasket 33 may be an O-ring, and fluorinated rubber (viton) or the like may be used as the material of the gasket 33. The vacuum in the processing chamber 21 is maintained by the metal plate 31 closing the opening 23, the dielectric cover 32 covering the plurality of slits 311, and the gasket 33.
The adhesion preventing plate 34 is provided on the metal plate 31 so as to cover at least a part of the plurality of slits 311. The adhesion preventing plate 34 may be made of the same material as the dielectric cover 32 or may be thinner than the dielectric cover 32.
According to the structure, the metal plate 31 and the dielectric cover 32 are separated by the gasket 33. Thus, even if induction heating occurs in the metal plate 31, heat transferred from the metal plate 31 to the dielectric cover 32 can be reduced. In addition, even if particles moving in the vacuum chamber 2 pass through the plurality of slits 311 in the metal plate 31, since a part of the particles adhere to the adhesion preventing plate 34, the possibility of adhering to the dielectric cover 32 can be reduced. As a result, the possibility that the dielectric cap 32 is heated due to the particles adhering to and accumulating in the dielectric cap 32 can be reduced.
As shown in fig. 1 and 2, it is preferable that a plurality of adhesion preventing plates 34 covering a plurality of slits 311 are provided in the metal plate 31, and that gaskets 33 are provided around the plurality of adhesion preventing plates 34. In this case, since the gasket 33 is also provided between the adjacent adhesion preventing plates 34, the distance between the metal plate 31 and the dielectric cover 32 can be maintained more reliably.
As shown in fig. 1 and 2, it is desirable that each of the plurality of adhesion preventing plates 34 does not block the slit 311. That is, a part of the plurality of slits 311 is exposed from the adhesion preventing plate 34. Thus, the space formed by the metal plate 31, the dielectric cover 32, and the gasket 33 communicates with the internal space of the vacuum container 2, and the gas in the space can be sucked through the internal space by a vacuum pump (not shown). As a result, a pressure difference can be prevented from occurring between the space and the inner space.
The high-frequency magnetic field generated from the antenna 7 is supplied to the processing chamber 21 through the dielectric cover 32, the adhesion preventing plate 34, and the plurality of slits 311. Thereby, the inductively coupled plasma P1 is generated in the processing chamber 21.
(with recording matters)
In other words, when the vacuum vessel 2 is evacuated, a pressure toward the metal plate 31 is applied to the dielectric cap 32 due to a pressure difference between the inside and the outside of the vacuum vessel 2. Thereby, the gasket 33 is compressed, and the dielectric cover 32 moves toward the metal plate 31 side. In addition, a portion of the dielectric cover 32 not supported by the gasket 33 is bent toward the metal plate 31 side.
At this time, when the dielectric cover 32 contacts the adhesion preventing plate 34, pressure is applied from the dielectric cover 32 to the adhesion preventing plate 34. Therefore, the adhesion preventing plate 34 not only reduces the possibility of adhesion of particles moving in the vacuum chamber 2 to the dielectric cover 32, but also maintains the pressure difference between the inside and outside of the vacuum chamber 2. However, in this case, it is considered that the adhesion preventing plate 34 may be broken due to the pressure applied from the dielectric cover 32 to the adhesion preventing plate 34.
Therefore, it is desirable that the dielectric cover 32 has a predetermined strength so that the dielectric cover 32 and the adhesion preventing plate 34 do not come into contact even when the vacuum vessel 2 is evacuated. The gasket 33 is preferably configured to support the dielectric cover 32 around the adhesion preventing plate 34 as shown in fig. 2. In this case, the structure for reducing the possibility of adhesion of the particles to the dielectric cover 32 and the structure for maintaining the pressure difference between the inside and outside of the vacuum chamber 2 are separated into the adhesion preventing plate 34 and the dielectric cover 32, respectively.
[ embodiment 2]
Another embodiment of the present invention will be described with reference to fig. 5 and 6.
Fig. 5 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus 1 according to the present embodiment. Fig. 6 is a cross-sectional view taken along line C-C of fig. 5. The plasma processing apparatus 1 of the present embodiment is different in shape of the metal plate 31 from the plasma processing apparatus 1 shown in fig. 1 to 4, and has the same other structure.
As shown in fig. 5 and 6, the metal plate 31 of the present embodiment is different from the metal plate 31 shown in fig. 1 to 4 in that the area between the slits 311 facing the adhesion preventing plate 34 is a concave portion 312, and the other structures are the same.
According to the structure, the adhesion preventing plate 34 is separated from the metal plate 31 at the portion facing the recess 312. Therefore, even if particles adhere to the portion of the adhesion preventing plate 34 facing the slit 311, the conductive film is formed, and the conductive film is hardly brought into contact with the recess 312 to be electrically conductive. This prevents the induction current from being generated in the metal plate 31 when the high-frequency current flows in the antenna 7. As a result, the intensity of the magnetic field generated by the antenna 7 can be prevented from being reduced by the induced current.
In addition, considering that the film formation speed of the sputtering apparatus used in the mass production line is about 200nm/min, the depth of the concave portion 312 is preferably 2mm or more. In this case, it takes 150 hours or more before the conductive film is conducted with the concave portion 312. Therefore, even when the sputtering apparatus is continuously operated, maintenance of the magnetic field introduction window 3 is only required once a week. The upper limit of the depth of the recess 312 is determined by various conditions such as the thickness and strength of the metal plate 31.
(with recording matters)
In the above embodiment, the adhesion preventing plate 34 is provided on the upper surface of the metal plate 31, but may be provided on the lower surface of the metal plate 31. However, in this case, it is necessary to fix the adhesion preventing plate 34 to the metal plate 31 by an adhesive or the like. In the above embodiment, the dielectric cover 32 has a plate shape, but the invention is not limited thereto, and may be, for example, a box shape with one surface open.
[ summary ]
The plasma processing apparatus according to embodiment 1 of the present invention has a structure including: a vacuum container for accommodating an object to be processed therein; an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window provided on a wall surface of the vacuum chamber, the magnetic field introduction window being provided to introduce the high-frequency magnetic field into the vacuum chamber so as to generate plasma in the vacuum chamber, the magnetic field introduction window including: a metal plate formed with a plurality of slits; a dielectric cover covering the plurality of slits; a gasket disposed between the dielectric cover and the metal plate; and an adhesion preventing plate provided to the metal plate so as to cover at least a part of the plurality of slits.
According to the structure, the dielectric cover is separated from the metal plate by the gasket. In addition, an anti-adhesion plate covers at least a portion of the plurality of slits in the metal plate. Thus, if particles moving in the vacuum vessel pass through the plurality of slits in the metal plate, the particles adhere to the adhesion preventing plate, and thus the possibility of adhering to the dielectric cover can be reduced. As a result, the possibility that the dielectric cover is heated due to the particles adhering to and accumulating in the dielectric cover can be reduced.
The plasma processing apparatus according to embodiment 2 of the present invention may be configured such that the magnetic field introduction window includes a plurality of adhesion preventing plates covering a plurality of slits among the plurality of slits, and the gasket is provided around each of the plurality of adhesion preventing plates. In this case, since the gasket is also provided between the adjacent adhesion preventing plates, the distance between the metal plate and the dielectric cover can be maintained more reliably.
The plasma processing apparatus according to embodiment 3 of the present invention is the plasma processing apparatus according to embodiment 1 or embodiment 2, wherein the space between the dielectric cover and the adhesion preventing plate is preferably in communication with the internal space of the vacuum chamber. In this case, a gas of the space may be sucked through the inner space of the vacuum container using a vacuum pump. As a result, a pressure difference can be prevented from occurring between the space and the inside of the vacuum vessel.
The plasma processing apparatus according to embodiment 4 of the present invention is the plasma processing apparatus according to embodiment 1 to embodiment 3, wherein the portion of the metal plate facing the adhesion preventing plate and adjacent to the slit is a concave portion.
In this case, the adhesion preventing plate is separated from the metal plate at a portion facing the concave portion. Therefore, even if particles adhere to the portion of the adhesion preventing plate facing the slit to form a conductive film, the conductive film is difficult to contact with the concave portion to conduct. Thereby, the induction current can be prevented from being generated in the metal plate in the case where the high-frequency current flows in the antenna. As a result, the intensity of the magnetic field generated by the antenna can be prevented from being reduced by the induced current.
The plasma processing apparatus according to embodiment 5 of the present invention is the plasma processing apparatus according to embodiment 4, wherein the depth of the recess is preferably 2mm or more. In this case, the maintenance of the magnetic field introduction window may be performed once a week even if the plasma processing apparatus is continuously operated.
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention.
Description of symbols
1: plasma processing apparatus
2: vacuum container
3: magnetic field leading-in window
7: antenna
9: holding part
21: treatment chamber
22: wall surface
23: an opening part
31: metal plate
32: dielectric cover
33: gasket ring
34: anti-adhesion plate
311: slit(s)
312: concave part

Claims (5)

1. A plasma processing apparatus, comprising: a vacuum container for accommodating an object to be processed therein;
an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; and
a magnetic field introduction window provided on a wall surface of the vacuum chamber, for introducing the high-frequency magnetic field into the vacuum chamber so as to generate plasma in the vacuum chamber,
the magnetic field introduction window includes:
a metal plate formed with a plurality of slits;
a dielectric cover covering the plurality of slits;
a gasket disposed between the dielectric cover and the metal plate; and
an anti-adhesion plate is provided on the metal plate so as to cover at least a part of the plurality of slits.
2. The plasma processing apparatus according to claim 1, wherein the magnetic field introduction window includes a plurality of the anti-adhesion plates covering a plurality of the plurality of slits,
the gasket is disposed around each of the plurality of adhesion preventing plates.
3. The plasma processing apparatus according to claim 1 or 2, wherein a space between the dielectric cover and the anti-adhesion plate and an inner space of the vacuum container communicate.
4. The plasma processing apparatus according to any one of claims 1 to 3, wherein a portion of the metal plate facing the adhesion preventing plate and adjacent to the slit is a concave portion.
5. The plasma processing apparatus according to claim 4, wherein a depth of the recess is 2mm or more.
CN202280022237.2A 2021-08-04 2022-07-22 Plasma processing apparatus Pending CN117044406A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-128450 2021-08-04
JP2021128450A JP2023023176A (en) 2021-08-04 2021-08-04 Plasma processing apparatus
PCT/JP2022/028446 WO2023013438A1 (en) 2021-08-04 2022-07-22 Plasma treatment device

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Publication Number Publication Date
CN117044406A true CN117044406A (en) 2023-11-10

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CN (1) CN117044406A (en)
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WO (1) WO2023013438A1 (en)

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JP2024120292A (en) * 2023-02-24 2024-09-05 日新電機株式会社 Plasma Processing Equipment

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JP2003264172A (en) * 2002-03-07 2003-09-19 New Japan Radio Co Ltd Plasma processor
JP7238613B2 (en) 2019-06-05 2023-03-14 日新電機株式会社 Plasma processing equipment
KR20210150561A (en) * 2019-06-05 2021-12-10 닛신덴키 가부시키 가이샤 plasma processing device
JP7302338B2 (en) * 2019-07-01 2023-07-04 日新電機株式会社 Plasma processing equipment
KR20210042562A (en) * 2019-10-10 2021-04-20 주식회사 원익아이피에스 Inductively coupled plasma processing apparatus

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KR20230145471A (en) 2023-10-17
WO2023013438A1 (en) 2023-02-09

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