CN117039369A - Three-dimensional stacked glass TGV substrate switch filter bank - Google Patents
Three-dimensional stacked glass TGV substrate switch filter bank Download PDFInfo
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- CN117039369A CN117039369A CN202311038276.4A CN202311038276A CN117039369A CN 117039369 A CN117039369 A CN 117039369A CN 202311038276 A CN202311038276 A CN 202311038276A CN 117039369 A CN117039369 A CN 117039369A
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- 239000000758 substrate Substances 0.000 title claims abstract description 204
- 239000011521 glass Substances 0.000 title claims abstract description 48
- 239000010410 layer Substances 0.000 claims abstract description 105
- 239000002344 surface layer Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 38
- 238000003475 lamination Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 4
- 238000011056 performance test Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Waveguides (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The application relates to a three-dimensional stacked glass TGV substrate switch filter group, which comprises 5 layers of glass TGV substrates, wherein the bottom layer of a first substrate is a ground signal layer, and the surface layer is provided with a component pattern; forming a first filter layer from the surface layer of the first substrate to the bottom layer of the second substrate, wherein a hollowed-out part is arranged in the second substrate, and the first substrate and the third substrate form a cavity structure at the hollowed-out part of the second substrate, wherein the cavity structure is used for assembling a switch chip; the bottom layer of the third substrate is a ground signal layer, the surface layer is provided with a component pattern, and the second filter layer is formed from the surface layer of the third substrate to the bottom layer of the fourth substrate; the fifth substrate is a shell; interconnection of the bottom layer pattern and the surface layer pattern of each layer of substrate is realized through TGV perforation of each layer of substrate. The application has the characteristics of wide frequency application range, large number of integrated channels, moderate size and excellent index stability, can meet the requirement of the new-generation phased array radar on high-frequency gating performance, and has extremely wide application prospect.
Description
Technical Field
The application relates to the technical field of microwave circuits and microelectronic intersection, in particular to a three-dimensional stacked glass TGV substrate switch filter bank.
Background
In a phased array antenna system, after the echo signal of an antenna is amplified in a primary stage, signal processing processes with functions of re-amplification, filtering, frequency conversion, gain adjustment, temperature compensation and the like are performed, and a core functional unit of the partial circuit is a switch filter bank. The switch filter group consists of a single-pole multi-throw gating switch and a multi-section filter group which are symmetrically configured, plays a role in filtering clutter signals and interference signals, is widely applied to radio frequency signal transmission links in communication systems and phased array radar systems, and can effectively improve the dynamic range and anti-interference capability of the system and enhance the survivability of the system in complex electromagnetic environments.
The technical requirement of miniaturization of the phased array radar system promotes the development of the switch filter bank to the miniaturization, but the problems of performance trade-offs in various aspects such as filter materials, filter sizes, filter performances and the like exist. For example, a switch filter bank designed by adopting a GaAs process has the characteristics of small size and moderate cost, but has low filtering performance and is not suitable for high-performance platform application; for example, a switch filter bank designed by adopting a silicon-based MEMS process has the characteristic of moderate filtering performance, but the size is larger, and because the silicon-based MEMS substrate material is high-resistance silicon, the problem of extremely large change rate of resistivity under the high-low temperature condition exists, so that the filtering performance is extremely changed in the high-low temperature range. Surface acoustic wave filter and bulk acoustic wave filter mainly have problem of limited frequency of use
Disclosure of Invention
In order to solve the technical problems in the prior art, the application provides a three-dimensional stacked glass TGV substrate switch filter bank.
The application comprises the following specific contents: a three-dimensional stacked glass TGV substrate switch filter bank comprises 5 layers of glass TGV substrates, wherein a first substrate, a second substrate, a third substrate, a fourth substrate and a fifth substrate are sequentially arranged from bottom to top; the first substrate is characterized in that the bottom layer is a ground signal layer, and the surface layer is provided with a component pattern; the micro-bumps on the bottom layer of the second substrate correspond to the micro-bumps on the surface layer of the first substrate, a first filter layer is formed from the surface layer of the first substrate to the bottom layer of the second substrate, a hollowed-out part is arranged in the second substrate, the first substrate and the third substrate form a cavity structure at the hollowed-out part of the second substrate, the cavity structure is used for assembling a switch chip, and the surface layer of the second substrate corresponds to the third substrate through the micro-bumps; the bottom layer of the third substrate is a ground signal layer, the surface layer is provided with a component pattern, a second filter layer is formed from the surface layer of the third substrate to the bottom layer of the fourth substrate, and the third substrate and the fourth substrate correspond to each other through micro bumps; the micro-convex points on the surface layer of the fourth substrate correspond to the micro-convex points on the bottom layer of the fifth substrate; the fifth substrate is a shell; interconnection of the bottom layer pattern and the surface layer pattern of each layer of substrate is realized through TGV perforation of each layer of substrate.
Furthermore, the edges of the second substrate, the third substrate, the fourth substrate and the fifth substrate are provided with notches, the notches of the substrates are overlapped in the vertical direction, and the first substrate is provided with a signal extraction pattern at the position corresponding to the notch as an external interface.
Further, the surface layer of the first substrate is provided with a microstrip filter pattern, a switch chip pattern, a signal interconnection line pattern and a ground signal network pattern, the microstrip filter pattern is connected with the switch chip through the signal interconnection line pattern, the switch chip is assembled on the substrate in a gold wire bonding mode, and the ground signal network pattern is arranged around the first substrate.
Further, the switch chip is connected with the signal extraction pattern on the first substrate.
Further, an external signal lead-out pattern is arranged on the bottom layer of the first substrate.
Further, the surface layer of the third substrate is provided with a microstrip filter pattern, a signal interconnection line pattern and a ground signal network pattern, the microstrip filter pattern is connected with the signal interconnection line pattern, and the ground signal network pattern is arranged around the third substrate.
Further, the cavity electromagnetic shielding is formed around the cavity structure through the ground signal micro-convex points, the ground signal through-glass through holes, the ground signal at the bottom layer of the first substrate and the ground signal at the surface layer of the second substrate; the periphery of the first filter layer filter pattern forms electromagnetic shielding of the first filter layer filter pattern through ground signal micro bumps, ground signal through glass through holes, ground signals at the bottom layer of the first substrate and ground signals at the surface layer of the second substrate; forming electromagnetic shielding of the second filter layer filter pattern around the second filter layer filter pattern through ground signal micro bumps, ground signal through glass through holes, ground signals at the bottom layer of the third substrate and ground signals at the surface layer of the fourth substrate; the three-dimensional module forms three-dimensional module electromagnetic shielding through the four-side ground signal micro-bumps, the ground signal through-glass through holes, the ground signal at the bottom layer of the first substrate and the ground signals at each layer of the second substrate to the fifth substrate.
Further, the manufacturing steps comprise the following steps:
s1, completing appearance manufacturing, TGV manufacturing and surface layer and bottom layer pattern manufacturing of each glass TGV substrate;
s2, carrying out lamination process on the first substrate and the second substrate to finish preparation of the first filter layer, cleaning, carrying out surface mounting and bonding of the active switch chip in a cavity of the hollowed-out part of the second substrate, carrying out preliminary electrical performance test, and transferring to the next procedure;
s3, carrying out lamination process on the third substrate and the fourth substrate to finish the preparation of the second filter layer, carrying out preliminary electrical property test after cleaning, and transferring to the next procedure;
s4, carrying out lamination process on the lamination structure obtained in the step S2 and the step S3, completing lamination preparation of the first filter layer and the second filter layer, carrying out preliminary electrical property test after cleaning, and transferring to the next procedure;
s5, after the first filter layer and the second filter layer are laminated, a lamination process is carried out on the first filter layer and the second filter layer and a fifth substrate, and the preparation of the three-dimensional laminated structure switch filter group based on the glass TGV substrate is completed.
Furthermore, each lamination process needs to meet the requirement of designing temperature gradient, the temperature of the former process is higher than that of the latter process, and the temperature of the assembly process is higher than that of the application assembly process.
The application has the beneficial effects that: the three-dimensional stacked self-shielding switch filter bank based on the glass TGV substrate has the characteristics of wide frequency application range, large number of integrated channels, moderate size and excellent index stability, can meet the requirement of a new-generation phased array radar on high-frequency gating performance, and has extremely wide application prospect.
Drawings
The following description of the embodiments of the application is further defined by reference to the accompanying drawings.
FIG. 1 is a schematic top view of the present application;
FIG. 2 is a schematic cross-sectional view taken along line AA of FIG. 1;
FIG. 3 is a schematic view of a fourth substrate surface view angle according to the present application;
FIG. 4 is a schematic view of a third substrate surface view according to the present application;
FIG. 5 is a schematic view of a second substrate surface view angle according to the present application;
FIG. 6 is a schematic view of a first substrate surface view angle according to the present application;
fig. 7 is a schematic view of a bottom surface of a first substrate according to the present application.
Detailed Description
Referring to fig. 1 to 7, the three-dimensional stacked switch filter bank based on the glass TGV substrate process of the present application includes 5 layers of glass TGV substrates, a first substrate 101, a second substrate 102, a third substrate 103, a fourth substrate 104 and a fifth substrate 105 in order from bottom to top: each layer of glass TGV substrate comprises a bottom layer and a surface layer, and micro-bumps 106-109 are arranged between adjacent glass TGV substrates.
The surface layer of the first substrate 101 is designed to include a microstrip filter pattern (A1 and A2 in the drawing), a switch chip pattern 111, a signal interconnection line pattern, and a ground signal network pattern, where the microstrip filter pattern is connected to the switch chip through the signal interconnection line pattern, and the switch chip is assembled on the first substrate 101 by a gold wire bonding 112, and the ground signal network pattern is disposed around the first substrate.
The first substrate 101 and the second substrate 102 are stacked, and a first filter layer is formed from the bottom layer of the first substrate 101 to the surface layer of the second substrate 102.
The surface design of the third substrate 103 comprises a microstrip filter pattern (B1 and B2 in the drawing), a signal interconnection line pattern and a ground signal network pattern, wherein the microstrip filter pattern is connected with the signal interconnection line pattern, and the ground signal network pattern is arranged around the third substrate.
The third substrate 103 and the fourth substrate 104 are laminated, and the second filter layer is formed from the bottom layer of the third substrate 103 to the surface layer of the fourth substrate 104.
The fifth substrate 105 serves as a housing closure and a complementary pattern.
The micro-bumps on the surface of the first substrate 101 comprise radio frequency transmission vertical transition structure micro-bumps, ground signal network micro-bumps and signal interconnection micro-bumps, and are distributed according to design requirements (corresponding to each component and circuit pattern) and are in one-to-one correspondence with the micro-bumps on the bottom surface of the substrate 102. The corresponding second substrate 102 surface micro-convex points are in one-to-one correspondence with the 103 bottom surface micro-convex points, the 103 surface micro-convex points are in one-to-one correspondence with the 104 bottom surface micro-convex points, and the 104 surface micro-convex points are in one-to-one correspondence with the 105 bottom surface micro-convex points. The micro-bumps are distributed over the three-dimensional modules to play roles of interconnection of the three-dimensional assembly structure and interconnection of electrical signals.
The first substrate 101 is a complete outline pattern, the second substrate 102 is a pattern with hollowed-out and notched, the third substrate 103, the fourth substrate 104 and the fifth substrate 105 are patterns with notched, and the notched patterns of 102, 103, 104 and 105 are overlapped. The area of the first substrate is larger than that of the other substrates, so that the assembly application is convenient.
The external interface has two modes: one is led out through the signal lead-out pattern 113 of the surface layer of the first substrate 101 at the notch of 102, 103, 104, 105, and the other is led out through the bottom pattern 301 of the first substrate 101.
Interconnection of the bottom layer pattern and the surface layer pattern of each glass TGV substrate is realized through TGV perforation 201-204. The whole three-dimensional assembly extends over the TGV perforations 201-205 and the micro bumps 106-109 to form a closed ground signal network.
The cavity structure 110 of the three-dimensional module is formed by overlapping the first substrate 101 and the third substrate 103 at the hollowed-out part of the second substrate 102, and the cavity electromagnetic shielding is formed around the cavity structure by ground signal micro-bumps, ground signal through-glass through holes, ground signals at the bottom layer of the first substrate 101 and ground signals at the surface layer of the second substrate 102. The periphery of the first filter layer filter pattern is provided with a ground signal micro bump, a ground signal through glass through hole, a ground signal at the bottom layer of the first substrate 101 and a ground signal at the surface layer of the second substrate 102 to form the electromagnetic shielding of the first filter layer filter pattern. The periphery of the second filter layer filter pattern is provided with a ground signal micro bump, a ground signal through glass through hole, a ground signal at the bottom layer of the third substrate 103 and a ground signal at the surface layer of the fourth substrate 104 to form the electromagnetic shielding of the second filter layer filter pattern. The three-dimensional module forms three-dimensional module electromagnetic shielding through the four-side ground signal micro-bumps, the ground signal through-glass holes, the ground signal of the bottom layer of the first substrate 101 and the ground signals of each layer 102-105.
According to the application, an active switch circuit and a two-layer filter structure are integrated by utilizing a glass TGV substrate laminated structure, each layer of filter structure is a multi-filter structure, the problems of large high and low temperature index change and high cost of a silicon-based MEMS laminated filter are overcome, and the space utilization rate is multiplied; the filtering performance is equivalent to the performance of the MEMS process filter, the problem of temperature stability of the filtering performance of the MEMS process filter is solved, and meanwhile, the low cost is realized, and the improvement of performance indexes and the low cost are realized; the ground signal network is adopted to form a multi-independent isolation cavity structure, so that each functional unit exists in each independent electromagnetic shielding structure, the microwave mutual interference of each functional unit in the three-dimensional module is restrained, and the microwave mutual interference between the internal structure of the three-dimensional module and the external environment is restrained; and each layer of the three-dimensional laminated structure has consistent appearance, is favorable for lamination alignment assembly, is easy to produce and has high yield.
The method for manufacturing the three-dimensional stacked glass TGV substrate switch filter bank based on the glass TGV substrate process in this embodiment is as follows:
in the production, the glass TGV substrates 101, 102, 103, 104, and 105 were first subjected to profile production, TGV production, and surface layer and underlying pattern production.
And then, the first substrate 101 and the second substrate 102 are subjected to lamination process through the first micro-bump 106, so that the preparation of the first filter layer is completed. After cleaning, the active switch chip is attached and bonded in the cavity of the hollow portion of the second substrate 102. And (5) performing preliminary electrical property test, and transferring to the next procedure.
And carrying out lamination process on the third substrate 103 and the fourth substrate 104 through the third micro-bump 108 to finish the preparation of the second filter layer. After cleaning, the initial electrical property test is carried out, and the next procedure is carried out.
And carrying out lamination processes on the 101/102 lamination structure and the 103/104 lamination structure through the second micro-convex points 107 to finish lamination preparation of the first filter layer and the second filter layer. After cleaning, the initial electrical property test is carried out, and the next procedure is carried out.
After the first/second filter layers are laminated, a lamination process is performed on the fourth micro-bump 109 and the fifth substrate 105, so that the preparation of the three-dimensional laminated structure switch filter group based on the glass TGV substrate is completed.
The assembly and distribution process of the three-dimensional stacked glass TGV substrate switch filter is completed by a 4-step lamination process, wherein each step of lamination process is required to meet the requirement of designing a temperature gradient, the temperature of the former process is higher than that of the latter process, and the temperature of the assembly process is higher than that of the application assembly process.
The design interface is designed in two ways: an external interface is designed through the surface layer pattern 113 of the first substrate 101 at the 102/103/104/105 notch; the external interface is designed through the bottom surface pattern 301 of the first substrate 101.
The drawings of the embodiment show the structure of designing two filters for each filter layer, and a plurality of filters can be designed for each filter layer according to the needs in practical application. The three-dimensional stacked glass TGV substrate switch filter bank can cover P wave bands, S wave bands, C wave bands, X wave bands, ku wave bands and Ka wave bands on the basis of frequency band expansion requirements, and can realize multiple channels such as single channels, double channels, four channels, eight channels, sixteen channels and the like on the basis of channel expansion requirements.
In the above description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The foregoing description is only of a preferred embodiment of the application, which can be practiced in many other ways than as described herein, so that the application is not limited to the specific implementations disclosed above. While the foregoing disclosure has been described with reference to certain embodiments, it will be understood by those skilled in the art that various changes and modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the application. Any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present application without departing from the technical solution of the present application still falls within the scope of the technical solution of the present application.
Claims (9)
1. A three-dimensional stacked glass TGV substrate switch filter bank characterized by: the glass TGV substrate comprises 5 layers of glass TGV substrates, wherein a first substrate, a second substrate, a third substrate, a fourth substrate and a fifth substrate are sequentially arranged from bottom to top; the first substrate is characterized in that the bottom layer is a ground signal layer, and the surface layer is provided with a component pattern; the micro-bumps on the bottom layer of the second substrate correspond to the micro-bumps on the surface layer of the first substrate, a first filter layer is formed from the surface layer of the first substrate to the bottom layer of the second substrate, a hollowed-out part is arranged in the second substrate, the first substrate and the third substrate form a cavity structure at the hollowed-out part of the second substrate, the cavity structure is used for assembling a switch chip, and the surface layer of the second substrate corresponds to the third substrate through the micro-bumps; the bottom layer of the third substrate is a ground signal layer, the surface layer is provided with a component pattern, a second filter layer is formed from the surface layer of the third substrate to the bottom layer of the fourth substrate, and the third substrate and the fourth substrate correspond to each other through micro bumps; the micro-convex points on the surface layer of the fourth substrate correspond to the micro-convex points on the bottom layer of the fifth substrate; the fifth substrate is a shell; interconnection of the bottom layer pattern and the surface layer pattern of each layer of substrate is realized through TGV perforation of each layer of substrate.
2. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 1, wherein: the edges of the second substrate, the third substrate, the fourth substrate and the fifth substrate are respectively provided with a notch, the notches of the substrates are overlapped in the vertical direction, and the first substrate is provided with a signal extraction pattern at the position corresponding to the notch as an external interface.
3. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 2, wherein: the surface layer of the first substrate is provided with a microstrip filter pattern, a switch chip pattern, a signal interconnection line pattern and a ground signal network pattern, the microstrip filter pattern is connected with the switch chip through the signal interconnection line pattern, the switch chip is assembled on the substrate in a gold wire bonding mode, and the ground signal network pattern is arranged around the first substrate.
4. A three-dimensional stacked glass TGV substrate-switching filter bank as defined in claim 3, wherein: the switch chip is connected with the signal extraction pattern on the first substrate.
5. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 1, wherein: the bottom layer of the first substrate is provided with an external signal lead-out pattern.
6. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 1, wherein: the surface layer of the third substrate is provided with a microstrip filter pattern, a signal interconnection line pattern and a ground signal network pattern, the microstrip filter pattern is connected with the signal interconnection line pattern, and the ground signal network pattern is arranged around the third substrate.
7. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 1, wherein: the periphery of the cavity structure forms a cavity electromagnetic shield through the ground signal micro-convex points, the ground signal through-glass through holes, the ground signals at the bottom layer of the first substrate and the ground signals at the surface layer of the second substrate; the periphery of the first filter layer filter pattern forms electromagnetic shielding of the first filter layer filter pattern through ground signal micro bumps, ground signal through glass through holes, ground signals at the bottom layer of the first substrate and ground signals at the surface layer of the second substrate; forming electromagnetic shielding of the second filter layer filter pattern around the second filter layer filter pattern through ground signal micro bumps, ground signal through glass through holes, ground signals at the bottom layer of the third substrate and ground signals at the surface layer of the fourth substrate; the three-dimensional module forms three-dimensional module electromagnetic shielding through the four-side ground signal micro-bumps, the ground signal through-glass through holes, the ground signal at the bottom layer of the first substrate and the ground signals at each layer of the second substrate to the fifth substrate.
8. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 1, wherein: the manufacturing steps comprise the following steps:
s1, completing appearance manufacturing, TGV manufacturing and surface layer and bottom layer pattern manufacturing of each glass TGV substrate;
s2, carrying out lamination process on the first substrate and the second substrate to finish preparation of the first filter layer, cleaning, carrying out surface mounting and bonding of the active switch chip in a cavity of the hollowed-out part of the second substrate, carrying out preliminary electrical performance test, and transferring to the next procedure;
s3, carrying out lamination process on the third substrate and the fourth substrate to finish the preparation of the second filter layer, carrying out preliminary electrical property test after cleaning, and transferring to the next procedure;
s4, carrying out lamination process on the lamination structure obtained in the step S2 and the step S3, completing lamination preparation of the first filter layer and the second filter layer, carrying out preliminary electrical property test after cleaning, and transferring to the next procedure;
s5, after the first filter layer and the second filter layer are laminated, a lamination process is carried out on the first filter layer and the second filter layer and a fifth substrate, and the preparation of the three-dimensional laminated structure switch filter group based on the glass TGV substrate is completed.
9. The three-dimensional stacked glass TGV substrate-switching filter bank of claim 8, wherein: the lamination process of each step needs to meet the requirement of designing temperature gradient, the process temperature of the former process is higher than the process temperature of the latter process, and the assembly process temperature is higher than the assembly process temperature of the application.
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| CN202311038276.4A CN117039369B (en) | 2023-08-16 | 2023-08-16 | Three-dimensional stacked glass TGV substrate switch filter bank |
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