CN117038711A - Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof - Google Patents

Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof Download PDF

Info

Publication number
CN117038711A
CN117038711A CN202310906165.4A CN202310906165A CN117038711A CN 117038711 A CN117038711 A CN 117038711A CN 202310906165 A CN202310906165 A CN 202310906165A CN 117038711 A CN117038711 A CN 117038711A
Authority
CN
China
Prior art keywords
layer
contact
channel
fin
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310906165.4A
Other languages
Chinese (zh)
Inventor
吴畅
王凯
刘捷龙
郭涛
邢绍琨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hubei Jiufengshan Laboratory
Original Assignee
Hubei Jiufengshan Laboratory
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hubei Jiufengshan Laboratory filed Critical Hubei Jiufengshan Laboratory
Priority to CN202310906165.4A priority Critical patent/CN117038711A/en
Publication of CN117038711A publication Critical patent/CN117038711A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The application provides a polar gallium oxide polarization heterojunction multichannel Fin-HEMT device and a preparation method thereof, wherein the polar gallium oxide polarization heterojunction multichannel Fin-HEMT device comprises a substrate, a buffer layer, a channel, a grid electrode, a contact layer, a Trench structure, a source electrode and a drain electrode; the buffer layer and the plurality of channels are sequentially overlapped on the substrate; the channel consists of a channel layer and a barrier layer which are overlapped; a heterojunction interface formed by the channel layer and the barrier layer generates two-dimensional electron gas through polarization; two contact layers are arranged on two sides of the plurality of channels, any one contact layer is contacted with two-dimensional electron gas, and the contact layers are contacted withThe bottom of the layer is in contact with the buffer layer, and the drain electrode and the source electrode are respectively arranged on the contact layers at different sides; the channels between the two contact layers are provided with a plurality of Trench structures, the channels between the Trench structures form a Fin structure, the grid electrode is arranged on the Trench structure and the Fin structure, and the grid electrode is in contact with the buffer layer and the side wall and the top of the Fin structure; the barrier layer is epsilon- (Al) x Ga 1‑x ) 2 O 3 A channel layer of epsilon-Ga 2 O 3 A layer. Compared with the prior art, the Fin-HEMT device has higher electron mobility.

Description

Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof
Technical Field
The application relates to the technical field of semiconductors, in particular to a polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and a preparation method thereof.
Background
The high electron mobility transistor (High Electron Mobility Transistor, HEMT) is a heterojunction field effect transistor. The high electron mobility transistor is a two-dimensional electron gas (2 DEG) formed by the heterojunction, so that very high electron mobility is obtained, and the characteristics of high electron saturation speed, high breakdown voltage and the like of the semiconductor material adopted for forming the heterojunction are combined, so that the high electron mobility transistor is suitable for various fields of high temperature, high frequency, radiation resistance, high power and the like, and is one of semiconductor devices with the highest potential in radio frequency and microwave applications.
Currently, a semiconductor material widely used in high electron mobility transistors is gallium oxide (Ga 2 O 3 ) And gallium nitride (GaN), but all of its applications have certain drawbacks:
for the silicon oxide (Ga 2 O 3 ) The High Electron Mobility Transistor (HEMT) is currently fabricated with a nonpolar beta phase (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 The heterojunction single-channel High Electron Mobility Transistor (HEMT) is mainly characterized in that a two-dimensional electron gas (2 DEG) is generated in a channel layer in a delta modulation doping mode, so that an epitaxial structure is complex, the output power of the single-channel structure is low, and the structure also causes poor channel limiting field and low channel mobility. For High Electron Mobility Transistors (HEMTs) made of gallium nitride (GaN), since gallium nitride (GaN) is self-alignedDue to the nature of the GaN epitaxial wafer, gaN defect density of the epitaxial wafer of the heterogeneous substrate is high, so that serious current collapse is caused, the voltage withstanding property and the radiation resistance property of the device are reduced, and the working reliability of the device is seriously affected.
Therefore, based on the defects, the application provides a novel polar gallium oxide polarization heterojunction multichannel Fin-HEMT device which is used as a more ideal semiconductor device.
Disclosure of Invention
Based on the above description, the application provides a polar gallium oxide polarization heterojunction multichannel Fin-HEMT device and a preparation method thereof, so as to provide a high electron mobility transistor with the advantages of high voltage resistance, high mobility, low current collapse, radiation resistance, high output power and lower material structure complexity as a more ideal semiconductor device.
The technical scheme for solving the technical problems is as follows:
in a first aspect, the present application provides a polar gallium oxide polarized heterojunction multichannel Fin-HEMT device, comprising: the semiconductor device comprises a substrate, a buffer layer, a channel, a grid electrode, a contact layer, a Trench structure, a source electrode and a drain electrode;
the buffer layer and the plurality of channels are sequentially overlapped on the substrate;
the channel consists of a channel layer and a barrier layer which are arranged in a superposition way, and the barrier layer is positioned on the channel layer; a heterojunction interface formed by the channel layer and the barrier layer generates two-dimensional electron gas through polarization;
the two contact layers are arranged on two sides of the plurality of channels, any one contact layer is in contact with the two-dimensional electron gas, the bottom of the contact layer is in contact with the buffer layer, and the drain electrode and the source electrode are respectively arranged on the contact layers on different sides;
a plurality of Trench structures penetrate through a plurality of trenches between the two contact layers, the plurality of Trench structures are distributed along the direction parallel to the two contact layers, the trenches between the plurality of Trench structures form a Fin structure, the grid electrode is arranged on the Trench structures and the Fin structure, and the grid electrode is in contact with the buffer layer, the side wall and the top of the Fin structure;
wherein the barrier layer is unintentionally doped epsilon- (Al) x Ga 1-x ) 2 O 3 A layer of unintentionally doped epsilon-Ga 2 O 3 A layer.
Further, the channel layers and the barrier layers are staggered and overlapped to form a multi-layer structure, and a structure with a first groove and a second groove is constructed on two sides of the multi-layer structure.
Further, the contact layer comprises a first contact layer and a second contact layer;
the first contact layer is arranged in the first groove, one side of the first contact layer is in contact with the two-dimensional electronic gas, the bottom of the first contact layer is in contact with the buffer layer, and the drain electrode is arranged on one side of the first contact layer, which is away from the buffer layer;
the second contact layer is arranged in the second groove, one side of the second contact layer is in contact with the two-dimensional electronic gas, the bottom of the second contact layer is in contact with the buffer layer, and the source electrode is arranged on one side, away from the buffer layer, of the second contact layer;
the first contact layer and the second contact layer are both heavily doped with N-epsilon-Ga 2 O 3 A layer.
Further, the grid electrode comprises a first T-shaped grid, a second T-shaped grid and a grid plate;
the Trench structures are arranged between the first contact layer and the second contact layer at intervals along the width direction of the gate, so that a structure with alternating Trench structures and Fin structures is formed;
one end of the Trench structure is contacted with the buffer layer;
the first T-shaped grid is arranged in the Trench structure, the grid foot of the first T-shaped grid is in contact with the upper surface of the buffer layer, the grid foot of the second T-shaped grid is in contact with the top of the Fin structure, the grid plate is clung to the channel and is vertically arranged on the buffer layer, and the first T-shaped grid and the second T-shaped grid are connected with the grid plate to form a structure of semi-surrounding the Fin structure by the grid plate.
Further, the substrate is Fe-doped epsilon-Ga 2 O 3 A SiC, gaN, diamond or sapphire substrate.
Further, the buffer layer is unintentionally doped epsilon-Ga 2 O 3 A layer.
In a second aspect, the present application further provides a method for preparing the polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device according to any one of the first aspect, which is characterized by comprising:
epitaxially growing a buffer layer on the substrate, continuously epitaxially growing a channel layer on the buffer layer, and epitaxially growing a barrier layer on the channel layer;
alternately growing the channel layer and the barrier layer on the barrier layer to form a multilayer structure with the channel layer and the barrier layer overlapped, and respectively growing contact layers on two sides of the multilayer structure; respectively depositing metal on the two contact layers to obtain a drain electrode and a source electrode; and on the multilayer structure between the contact layers, vertically etching the multilayer structure to the buffer layer along a direction parallel to the two contact layers to form a structure with alternating Trench structure and Fin structure, and depositing metal on the buffer layer, the channel layer and the barrier layer to obtain the grid electrode.
Further, after the forming of the multilayer structure in which the channel layer and the barrier layer overlap and the growing of the contact layers on both sides of the multilayer structure, respectively, the method further includes:
preparing a hard mask on the barrier layer on the surface by adopting a deposition mode;
transferring the pattern of the soft mask to the hard mask, and etching a first groove and a second groove on two sides of the multilayer structure by dry etching.
A first contact layer and a second contact layer are epitaxially grown at the first groove and the second groove in a regeneration growth technology;
and removing the hard mask by adopting wet etching.
Further, depositing metal on the two contact layers respectively to obtain a drain electrode and a source electrode, which specifically includes:
depositing metal on the first contact layer to obtain the drain electrode;
depositing metal on the second contact layer to obtain the source electrode;
and annealing the first contact layer and the second contact layer to enable the drain electrode and the source electrode to form ohmic contact with the contact layer.
Further, depositing metal on the buffer layer, the channel layer and the barrier layer to obtain a gate, which specifically includes:
taking the photoresist as a mask, and forming a morphology matched with the grid electrode on the structure with the alternating pattern of the pattern structure and the Fin structure through exposure and development;
and depositing metal by adopting electron beam evaporation or magnetron sputtering, stripping the redundant metal, and reserving the metal of the exposure development area to form the grid electrode.
Compared with the prior art, the technical scheme of the application has the following beneficial technical effects:
the polar gallium oxide polarized heterojunction multichannel Fin-HEMT device provided by the application is provided with a substrate, a buffer layer, a channel, a grid electrode, a drain electrode and a source electrode; the buffer layer and the plurality of channels are sequentially overlapped on the substrate;
the channel consists of channel layers and barrier layers which are overlapped, the barrier layers are positioned on the channel layers, and the channel layers and the barrier layers are overlapped in a staggered way to form a multi-layer structure; the barrier layer is unintentionally doped epsilon- (Al) x Ga 1-x ) 2 O 3 A channel layer of unintentionally doped epsilon-Ga 2 O 3 The layer of the material is formed from a layer,
a heterojunction interface formed by the channel layer and the barrier layer generates two-dimensional electron gas through polarization; respectively etching two sides of the multilayer structure to the buffer layer, and then regrowing the heavily doped N-type epsilon-Ga 2 O 3 The layer is used as a contact layer, two contact layers are arranged on two sides of a plurality of channels,and any contact layer is contacted with the two-dimensional electron gas, and metal is deposited on the contact layers on different sides to obtain a source electrode and a drain electrode respectively.
And on the multilayer structure between the two contact layers, vertically etching the multilayer structure to the buffer layer along the direction parallel to the two contact layers to form a Trench structure, forming a Fin structure by the multilayer structure among the plurality of Trench structures, forming a structure with the Trench structure and the Fin structure alternately on the multilayer structure, and depositing metal on the buffer layer, the channel layer and the barrier layer to obtain the grid electrode.
Namely, selecting epsilon-phase Ga 2 O 3 As a material for manufacturing semiconductor devices, by polar epsilon-Ga 2 O 3 The polarization characteristics of (C) may be in ε - (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 The two-dimensional electron gas channel is formed at the heterojunction interface, so that the structural complexity of the heterojunction epitaxial material is reduced, and the material growth difficulty of the heterojunction multi-channel epitaxial layer is improved. Meanwhile, by adding the grid electrode penetrating through the channel and connected with the buffer layer, the grid electrode forms a structure surrounding the Fin structure in three directions, so that the control of the channel is better realized by the grid electrode.
Compared with the prior art, the polar gallium oxide polarization heterojunction multichannel Fin-HEMT device has the following advantages:
(1) High withstand voltage: for GaAs and GaN, ε -Ga 2 O 3 The dielectric breakdown field strength is relatively high and the forbidden bandwidth is relatively large and the critical breakdown field strength is relatively high and is relatively high, namely-5 eV, and the dielectric breakdown characteristic of the device is effectively improved;
(2) High mobility: for nonpolar beta-Ga which can only form a 2DEG channel by delta-Si modulation doping 2 O 3 Polarity ε - (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 The finite field property and mobility of the heterojunction channel are obviously improved, and the channel mobility is further improved through the Fin structure.
(3) Low current collapse: for a GaN heterojunction multi-channel HEMT with hetero-substrate epitaxy, epsilon-Ga 2 O 3 The heterojunction epitaxy can be carried out by selecting a homogeneous substrate, and the current collapse phenomenon can be effectively improved by small defect density。
(4) Radiation resistance: for GaAs with small forbidden band width and GaN with more defect energy levels, epsilon-Ga 2 O 3 The homoepitaxy defect density is small, and the homoepitaxy defect density is excellent in radiation resistance.
(5) High output power: polarity ε - (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 The heterojunction has high channel mobility, and the combination material has critical breakdown field strength of 8MV/cm, so that the heterojunction can be applied to high-voltage high-current working scenes to generate high output power.
(6) Low material structural complexity: for the beta phase (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 Heterojunction, epsilon- (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 The heterojunction directly produces a 2DEG at the heterojunction interface by polarization, requiring only the channel layer and barrier layer, without the deliberately doped delta-Si modulation layer, which would greatly reduce the complexity of the material structure in the fabrication of a multi-channel heterojunction device.
In conclusion, the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device provided by the application can optimize the application effect of the HEMT device and improve the application performance of the HEMT device.
Drawings
Fig. 1 is a schematic structural diagram of a polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device according to an embodiment of the present application;
FIG. 2 is a schematic view of the cross-section along the direction AA' of FIG. 1;
FIG. 3 is a schematic view of the cross-section of FIG. 1 along the direction CC';
FIG. 4 is a schematic view of the cross-section along BB' in FIG. 1;
fig. 5 is a flowchart of a preparation method for preparing a polar gallium oxide polarization heterojunction multichannel Fin-HEMT device according to an embodiment of the present application;
reference numerals:
1. a substrate;
2. a buffer layer;
3. a channel; 31. a channel layer; 32. a barrier layer;
4. a drain electrode;
5. a source electrode;
6. a contact layer; 61. a first contact layer; 62. a second contact layer;
7. a gate; 71. a grid plate; 72. a first T-gate; 73. a second T-shaped gate;
8. a Trench structure;
9. fin structure.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Embodiments of the application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Abbreviations and key term definitions:
Ga 2 O 3 : gallum Oxide, gallium Oxide
GaN: gallum Nitrogen, gallium nitride
GaAs: gallium arsenide, gallium arsenide
HEMT: high Electron Mobility Transistor high electron mobility transistor
SiC: silicon carbide
2DEG: two dimensional electron gas two-dimensional electron gas
AlGaN: aluminum gallium nitride AlGaN
AlN: aluminum nitride
(Al x Ga 1-x ) 2 O 3 : aluminum gallium nitride AlGaOx
Fin structure: three-dimensional fin structure
Trench structure: groove(s)
In the prior art, conventional HEMTs have a non-polar Ga 2 O 3 Heterojunction single channel HEMTs of the type employing beta phase (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 The single channel HEMT of the heterojunction produces a 2DEG at the channel layer by delta modulation doping. The defects of the existing method are as follows: due to beta phase (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 The single-channel HEMT of the heterojunction can generate 2DEG in the channel layer only by arranging the delta modulation doping layer, so that the epitaxial structure is complex, and the material growth difficulty is high. Meanwhile, due to the arrangement of a single channel, the channel has poor limiting field, low channel mobility and low output power.
Or, a polar GaN heterojunction multi-channel HEMT, which adopts AlGaN/GaN heterojunction multi-channel HEMTs. The defects of the existing method are as follows: the homosubstrate epitaxy is small in size and high in price, and is not suitable for industrialized popularization, and the heterosubstrate epitaxy can cause high defect density, reduce electron mobility and increase on-resistance. Meanwhile, the electron capture of the defect energy level can not only cause serious current collapse, but also reduce the voltage withstanding property and the radiation resistance property of the device, and seriously influence the working reliability of the device. And finally, a groove electrode is adopted for source-drain ohmic contact, after a plurality of channels are etched, wafer flatness is poor, and process risks are increased.
Ga of epsilon phase 2 O 3 Is a polar phase of hexagonal system, has strong spontaneous polarization, and forms (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 When heterojunction is formed, the doping through delta modulation is not needed, the 2DEG with high concentration can be generated only by spontaneous polarization and piezoelectric polarization, the concentration can be adjusted by changing Al components, and the limiting field property and mobility of a polarized channel have obvious advantages compared with a delta modulation doped channel. At the same time, due to epsilon-Ga 2 O 3 The ultra-wide forbidden bandwidth and the high critical breakdown field intensity of the material lead the material to have huge application potential in the high-frequency field of high voltage resistance and radiation resistance, and the epsilon-Ga can be developed based on the material 2 O 3 A polarized heterojunction HEME structure. In order to further increase the output power of the device, a multi-channel heterojunction structure with a plurality of groups of channel layers and barrier layers overlapped with each other is introduced, the barrier layer of the lower-layer channel between adjacent channels can be used as the back barrier of the upper-layer channel, and the limiting field of two-dimensional electron gas in the channel is effectively improvedSex. It should be noted that when the HEMT device is fabricated by using the multi-channel heterojunction, the gate is difficult to form good control on the underlying channel, and the gate and Fin structure are combined, so that the channel is controlled by the top gate and the side gate together.
Based on this, the present application provides a polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device structure and a manufacturing method thereof, and embodiments of the present application are described in further detail below with reference to the accompanying drawings and examples, which are provided for illustrating the present application, but are not intended to limit the scope of the present application.
Example 1
As shown in fig. 1, the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device provided in this embodiment is composed of a substrate 1, a buffer layer 2, a channel 3, a gate 7, a drain 4 and a source 5.
A buffer layer 2 and a plurality of channels 3 are sequentially stacked on a substrate 1. Buffer layer 2 may employ unintentionally doped epsilon-Ga 2 O 3 Layer, substrate 1 is Fe-doped epsilon-Ga 2 O 3 The defect density is obviously reduced, the current collapse phenomenon is effectively improved, and the voltage withstanding characteristic and the irradiation resisting characteristic of the device are improved.
The channel 3 is composed of a channel layer 31 and a barrier layer 32 which are arranged in a superposition manner, the barrier layer 32 is positioned on the channel layer 31, and the channel layer 31 and the barrier layer 32 can generate two-dimensional electron gas at a heterojunction interface through polarization. The two contact layers 6 are arranged on two sides of the channel 3, the two contact layers 6 are in contact with two-dimensional electron gas, the bottom of the contact layer 6 is connected with the buffer layer 2, and the drain electrode 4 and the source electrode 5 are respectively arranged on the contact layers 6 on different sides, so that the device can realize high electron mobility by utilizing the two-dimensional electron gas.
A plurality of Trench structures 8 penetrate through the plurality of channels 3 between the two contact layers 6, the plurality of Trench structures 8 are distributed along the direction parallel to the two contact layers 6, the channels 3 between the plurality of Trench structures 8 form a Fin structure 9, the grid electrode 7 is arranged on the Trench structures 8 and the Fin structure 9, and the grid electrode 7, the buffer layer 2 and the side wall and the top of the Fin structure 9 are used for controlling the plurality of channels 3 by the grid electrode 7.
The channel layer 31 is unintentionally dopedepsilon-Ga of (C) 2 O 3 The layer barrier layer 32 is unintentionally doped epsilon- (Al) x Ga 1-x ) 2 O 3 Layers that enable devices with high 2DEG concentration and channel mobility.
The thicknesses of the buffer layer 2, the substrate 1, the channel layer 31, and the barrier layer 32 are all different.
It should be noted that, the specific number of the channel 3, that is, the channel layer 31 and the barrier layer 32 is not limited, and the channel layer and the barrier layer can be sequentially overlapped according to actual needs, so that the channel layer can be doped with Fe-Ga 2 O 3 Epitaxial unintentional doped epsilon-Ga on a substrate 1 2 O 3 And unintentionally doped epsilon- (Al) x Ga 1-x ) 2 O 3 And (3) a plurality of channels 3 which are conducted through the 2DEG are constructed by overlapping multi-layer structures and realizing multi-channel structure heterojunction.
Further, as shown in fig. 1, the plurality of channel layers 31 and the plurality of barrier layers 32 are stacked and arranged alternately to form a multi-layer structure, and a structure with a first groove and a second groove is formed on both sides of the multi-layer structure.
The polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device further comprises a first contact layer 61 arranged in the first groove and a second contact layer 62 arranged in the second groove, and bottoms of the first contact layer 61 and the second contact layer 62 are in contact with the buffer layer 2. The first contact layer 61 and the second contact layer 62 are both heavily doped N-epsilon-Ga 2 O 3 Layer by regrowing heavily doped N-type epsilon-Ga on buffer layer 2 2 O 3 As a way of the contact layer 6, it is possible to achieve sufficient contact with the channel 3 to form an ohmic contact, so as to achieve the effect of reducing the resistance and further improving the output power of the device.
On the basis of the above embodiment, further, as shown in fig. 2 and 3, the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device is provided with a plurality of Trench structures 8 penetrating through the multi-layer structure between the two contact layers 6, the plurality of Trench structures 8 are distributed along the direction parallel to the two contact layers 6, the Trench structures 8 completely penetrate through the multi-layer structure, one end of the Trench structures 8 is contacted with the buffer layer 2, and the Fin structures 9 are formed by the multi-layer structure between every two Trench structures 8, so as to form a structure in which the Trench structures 8 and the Fin structures 9 alternate.
Referring to fig. 2, 3 and 4, the gate 7 further includes a first T-shaped gate 72, a second T-shaped gate 73 and a grid plate 71, the gate legs of the first T-shaped gate 72 and the second T-shaped gate 73 are narrower than the grid cap to reduce the resistance of the gate 7, the first T-shaped gate 72 is disposed in the Trench structure 8, the gate leg of the first T-shaped gate 72 contacts with the upper surface of the buffer layer 2, the gate leg of the second T-shaped gate contacts with the barrier layer 32 on top to achieve the technical effect of increasing the cut-off frequency of the device, the width of the grid plate 71 is similar to the width of the grid cap, the grid plate 71 is closely attached to the channel 3 on the side wall of the Trench structure 8 and is vertically connected with the grid plate 71, so that the structure of the first T-shaped gate 72 and the second T-shaped gate 73 alternating with the grid plate 71 forms a semi-surrounding Fin structure 9 on the whole of the grid 7 to control the channel 3.
It should be noted that, the Fin structure 9 formed by the multi-layer structure between every two Trench structures 8 is also called a three-dimensional Fin structure, and the gate 7 covers the sidewall and the top of the channel 3, so that the gate 7 can form electric field regulation and control on the channel 3 from multiple directions, and can greatly improve the channel mobility and the device linearity.
Further, on the basis of the above embodiment, the substrate 1 may be made of a high-resistance material such as SiC, gaN, diamond, or sapphire, as the substrate 1.
Compared with the prior art, the polar gallium oxide polarization heterojunction multichannel Fin-HEMT device has the following advantages:
first, high withstand voltage: for GaAs and GaN, ε -Ga 2 O 3 The dielectric breakdown field strength is relatively high and the forbidden bandwidth is relatively large and the critical breakdown field strength is relatively high and is relatively high, namely-5 eV, and the dielectric breakdown characteristic of the device is effectively improved;
second, high mobility: for nonpolar beta-Ga which can only form a 2DEG channel by delta-Si modulation doping 2 O 3 Polarity ε - (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 Limited and migration of heterojunction channelsThe mobility has a significant increase and the channel mobility is further increased by Fin structure 9.
Third, low current collapse: for a GaN heterojunction multi-channel HEMT with hetero-substrate epitaxy, epsilon-Ga 2 O 3 The heterojunction epitaxy can be carried out by selecting a homogeneous substrate, and the current collapse phenomenon can be effectively improved by small defect density.
Fourth, radiation-resistant: for GaAs with small forbidden band width and GaN with more defect energy levels, epsilon-Ga 2 O 3 The homoepitaxy defect density is small, and the homoepitaxy defect density is excellent in radiation resistance.
Fifth, high output power: polarity ε - (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 The heterojunction has high channel mobility, and the combination material has critical breakdown field strength of 8MV/cm, so that the heterojunction can be applied to high-voltage high-current working scenes to generate high output power.
Sixth, low material structural complexity: for the beta phase (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 Heterojunction, epsilon- (Al) x Ga 1-x ) 2 O 3 /Ga 2 O 3 The heterojunction directly produces a 2DEG at the heterojunction interface by polarization, requiring only the channel layer and barrier layer, without the deliberately doped delta-Si modulation layer, which would greatly reduce the complexity of the material structure in the fabrication of a multi-channel heterojunction device.
Example two
This embodiment is superior to the first embodiment in the case of a small number of channel layers 31, and differs from the first embodiment in that: the drain electrode 4 is arranged in the first groove, the bottom of the drain electrode 4 is in direct contact with the buffer layer 2, the drain electrode 4 is in direct ohmic contact with the channel 3, the source electrode 5 is arranged in the second groove, the bottom of the source electrode 5 is in direct contact with the buffer layer 2, and the source electrode 5 is in direct ohmic contact with the channel 3.
Example III
The embodiment of the application also provides a preparation method for preparing the polar gallium oxide polarization heterojunction multichannel Fin-HEMT device described in the embodiment I, as shown in fig. 5, comprising the following steps:
step S1: epitaxially growing on the substrate 1 to obtain a multilayer structure;
step S101: epitaxially growing a buffer layer 2 on the substrate 1;
step S102: epitaxially growing a channel layer 31 on the buffer layer 2;
step S103: a barrier layer 32 is epitaxially grown on the channel layer 31.
Specifically, the buffer layer 2, the channel layer 31, and the barrier layer 32 are grown by MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy), and the channel layer 31 and the barrier layer 32 are alternately grown on the buffer layer 2, thereby forming a multilayer structure in which the channel layer 31 and the barrier layer 32 overlap.
Step S2: etching a first groove and a second groove on the multilayer structure;
step S201: depositing a Ni mask layer on the surface of the device by sputtering;
step S202: transferring the soft mask pattern to the Ni mask layer through photoetching stripping;
step S203: and (3) performing dry etching by using plasma containing Cl groups, wherein the etching is stopped in the bottom buffer layer 2 structure, and the first groove and the second groove are etched on two sides of the multilayer structure.
Step S3: the contact layer 6 is regrown;
step S301: regrowing the first contact layer 61 and the second contact layer 62 at the first groove and the second groove by adopting molecular beam epitaxy;
step S302: the Ni mask layer was removed using a hydrochloric acid solution.
Step S4: source-drain metal electrodes are deposited on the contact layer 6 by electron beam evaporation or magnetron sputtering.
Metal is deposited on the first contact layer 61 to obtain the drain electrode 4, and metal is deposited on the second contact layer 62 to obtain the source electrode 5.
Specifically, the source-drain metal electrode is usually Ti/Al/Ni/Au, and in addition, in actual operation, an annealing treatment is required, the annealing temperature may be 400-600 ℃, the annealing atmosphere is nitrogen, and the annealing time is 30-60 s, so that the drain electrode 4 and the source electrode 5 form good ohmic contact with the contact layer 6.
Step S5: penetrating the channel layer 31 and the barrier layer 32 on the multilayer structure by adopting dry etching to form a Trench structure 8;
step S501: depositing a Ni mask layer on the surface of the device by sputtering;
step S502: transferring the soft mask pattern to the Ni mask layer through photoetching stripping;
step S503: performing selective dry etching by using plasma containing Cl groups, wherein the etching is stopped in the bottom buffer layer 2 structure, and an etched Trench structure 8 is obtained on the multilayer structure to form a structure with the alternating Trench structure 8 and Fin structure 9;
step S6: depositing the grid electrode 7 of the Fin structure 9 by metal evaporation or sputtering;
step S601: adopting PMMA series electronic photoresist to carry out spin coating treatment;
specifically, PMMA series electronic photoresist is selected for three times of photoresist homogenization, the sensitivity and resolution of the photoresist are changed by changing the photoresist baking temperature, and proper exposure areas and exposure doses are matched, so that the composite layer photoresist can form a T-shaped gate electrode photoetching morphology after one exposure and one development.
Step S602: carrying out grid electrode 7 photoetching by adopting an electron beam photoetching machine;
step S603: carrying out metal deposition on the grid electrode 7 by utilizing electron beam evaporation or magnetron sputtering;
step S604: and stripping and removing redundant metal, and only keeping the metal of the exposure and development area to form a grid electrode 7. At the position of the Trench structure 8, the grid electrode 7 contacts with the bottom and the buffer layer 2, and is sequentially embedded in a plurality of channels 3 along the vertical direction; at the Fin structure 9 location, the gate 7 is in contact with the sidewalls and top of the Fin structure 9, surrounding the multi-channel 3Fin structure 9 from three directions.
Example IV
The embodiment is used for preparing the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device provided by the second embodiment, and on the basis of the third embodiment, the difference between the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device and the third embodiment is that:
step 2: etching a first groove and a second groove on the multilayer structure;
step 201: etching by adopting a soft mask mode;
step 202: washing the glue after etching is finished;
step 203: and performing full-wafer regrowth, and removing the secondary epitaxial layer between the source and the drain by etching.
Specifically, when the number of the channels 3 of the polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device in the first embodiment is smaller, the etching depth of the regrowth region is within the tolerance range of the soft mask, and the first groove and the second groove can be directly etched by adopting a soft mask mode.
Example five
The embodiment is used for preparing the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device provided by the second embodiment, and on the basis of the third embodiment, the difference between the polar gallium oxide polarization heterojunction multi-channel Fin-HEMT device and the third embodiment is that:
step S5: forming a Trench structure 8 by penetrating the channel layer 31 and the barrier layer 32 on the multilayer structure by adopting selective dry etching;
step S501: transferring the soft mask pattern to the Ni mask layer through photoetching stripping;
step S502: after the three layers of photoresist are subjected to exposure development, etching is performed in a mode of combining a hard mask with a self-aligned soft mask;
step S503: and (3) performing dry etching by using plasma containing Cl groups, wherein the etching is stopped in the bottom buffer layer 2 structure, and the etched Trench structure 8 is obtained on the multilayer structure.
Specifically, when the number of the channels 3 of the polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device in the second embodiment is small, the etching depth of the Fin region is within the tolerance range of the soft mask, and the gate of the Fin structure 9 with equal gate length can be manufactured by combining a hard mask with a self-aligned soft mask. The length of Fin will not be controlled by the hard mask etched region, thereby enhancing process flexibility of the hard mask pattern. Fin length is equal to gate length, channel width between gate source and gate drain is not lost, and parasitic resistance is reduced.
In the description of the present specification, reference to the term "a particular example" or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the application. In this specification, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims (10)

1. The polar gallium oxide polarized heterojunction multichannel Fin-HEMT device is characterized by comprising: the semiconductor device comprises a substrate, a buffer layer, a channel, a grid electrode, a contact layer, a Trench structure, a source electrode and a drain electrode;
the buffer layer and the plurality of channels are sequentially overlapped on the substrate;
the channel consists of a channel layer and a barrier layer which are arranged in a superposition way, and the barrier layer is positioned on the channel layer; a heterojunction interface formed by the channel layer and the barrier layer generates two-dimensional electron gas through polarization;
the two contact layers are arranged on two sides of the plurality of channels, any one contact layer is in contact with the two-dimensional electron gas, the bottom of the contact layer is in contact with the buffer layer, and the drain electrode and the source electrode are respectively arranged on the contact layers on different sides;
a plurality of Trench structures penetrate through a plurality of trenches between the two contact layers, the plurality of Trench structures are distributed along the direction parallel to the two contact layers, the trenches between the plurality of Trench structures form a Fin structure, the grid electrode is arranged on the Trench structures and the Fin structure, and the grid electrode is in contact with the buffer layer, the side wall and the top of the Fin structure;
wherein the barrier layer is unintentionally doped epsilon- (Al) x Ga 1-x ) 2 O 3 A layer of unintentionally doped epsilon-Ga 2 O 3 A layer.
2. The polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device of claim 1, wherein a plurality of channel layers and a plurality of barrier layers are staggered and overlapped to form a multi-layer structure, and a structure with a first groove and a second groove is formed on two sides of the multi-layer structure.
3. The polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device of claim 2, wherein the contact layer comprises a first contact layer and a second contact layer;
the first contact layer is arranged in the first groove, one side of the first contact layer is in contact with the two-dimensional electronic gas, the bottom of the first contact layer is in contact with the buffer layer, and the drain electrode is arranged on one side of the first contact layer, which is away from the buffer layer;
the second contact layer is arranged in the second groove, one side of the second contact layer is in contact with the two-dimensional electronic gas, the bottom of the second contact layer is in contact with the buffer layer, and the source electrode is arranged on one side, away from the buffer layer, of the second contact layer;
the first contact layer and the second contact layer are both heavily doped with N-epsilon-Ga 2 O 3 A layer.
4. The polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device of claim 3, wherein the gate comprises a first T-gate, a second T-gate, and a louver;
the Trench structures are arranged between the first contact layer and the second contact layer at intervals along the width direction of the gate, so that a structure with alternating Trench structures and Fin structures is formed;
one end of the Trench structure is contacted with the buffer layer;
the first T-shaped grid is arranged in the Trench structure, the grid foot of the first T-shaped grid is in contact with the upper surface of the buffer layer, the grid foot of the second T-shaped grid is in contact with the top of the Fin structure, the grid plate is clung to the channel and is vertically arranged on the buffer layer, and the first T-shaped grid and the second T-shaped grid are connected with the grid plate to form a structure of semi-surrounding the Fin structure by the grid plate.
5. The polar gallium oxide polarized heterojunction multichannel Fin-HEMT device of claim 1, wherein the substrate is Fe-doped epsilon-Ga 2 O 3 A SiC, gaN, diamond or sapphire substrate.
6. The polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device of claim 1, wherein the buffer layer is unintentionally doped epsilon-Ga 2 O 3 A layer.
7. A method of fabricating a polar gallium oxide polarized heterojunction multi-channel Fin-HEMT device of any one of claims 1-6, comprising:
epitaxially growing a buffer layer on the substrate, continuously epitaxially growing a channel layer on the buffer layer, and epitaxially growing a barrier layer on the channel layer;
alternately growing the channel layer and the barrier layer on the barrier layer to form a multilayer structure with the channel layer and the barrier layer overlapped, and respectively growing contact layers on two sides of the multilayer structure; respectively depositing metal on the two contact layers to obtain a drain electrode and a source electrode; and on the multilayer structure between the contact layers, vertically etching the multilayer structure to the buffer layer along a direction parallel to the two contact layers to form a structure with alternating Trench structure and Fin structure, and depositing metal on the buffer layer, the channel layer and the barrier layer to obtain the grid electrode.
8. The method of manufacturing according to claim 7, further comprising, after the forming of the multilayer structure in which the channel layer and the barrier layer overlap and the growing of the contact layers on both sides of the multilayer structure, respectively:
preparing a hard mask on the barrier layer on the surface by adopting a deposition mode;
transferring the pattern of the soft mask to the hard mask, and etching a first groove and a second groove on two sides of the multilayer structure by dry etching.
A first contact layer and a second contact layer are epitaxially grown at the first groove and the second groove in a regeneration growth technology;
and removing the hard mask by adopting wet etching.
9. The method according to claim 8, wherein the depositing metal on the two contact layers respectively to obtain a drain electrode and a source electrode, comprises:
depositing metal on the first contact layer to obtain the drain electrode;
depositing metal on the second contact layer to obtain the source electrode;
and annealing the first contact layer and the second contact layer to enable the drain electrode and the source electrode to form ohmic contact with the contact layer.
10. The method of manufacturing according to claim 7, wherein depositing a metal on the buffer layer, the channel layer and the barrier layer to obtain a gate electrode, specifically comprises:
taking the photoresist as a mask, and forming a morphology matched with the grid electrode on the structure with the alternating pattern of the pattern structure and the Fin structure through exposure and development;
and depositing metal by adopting electron beam evaporation or magnetron sputtering, stripping the redundant metal, and reserving the metal of the exposure development area to form the grid electrode.
CN202310906165.4A 2023-07-20 2023-07-20 Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof Pending CN117038711A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310906165.4A CN117038711A (en) 2023-07-20 2023-07-20 Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310906165.4A CN117038711A (en) 2023-07-20 2023-07-20 Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof

Publications (1)

Publication Number Publication Date
CN117038711A true CN117038711A (en) 2023-11-10

Family

ID=88630845

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310906165.4A Pending CN117038711A (en) 2023-07-20 2023-07-20 Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof

Country Status (1)

Country Link
CN (1) CN117038711A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180158936A1 (en) * 2016-12-02 2018-06-07 University Of Electronic Science And Technology Of China GaN-BASED BIDIRECTIONAL SWITCH DEVICE
CN113990947A (en) * 2021-10-29 2022-01-28 西安电子科技大学 Multi-channel GaN high electron mobility transistor based on buried gate structure and manufacturing method thereof
CN115207116A (en) * 2022-07-01 2022-10-18 中山大学 Gallium oxide transistor and polarization regulation method for concentration of two-dimensional electron gas thereof
CN115332322A (en) * 2022-10-17 2022-11-11 武汉派思半导体有限公司 Multi-channel GaN HEMT device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180158936A1 (en) * 2016-12-02 2018-06-07 University Of Electronic Science And Technology Of China GaN-BASED BIDIRECTIONAL SWITCH DEVICE
CN113990947A (en) * 2021-10-29 2022-01-28 西安电子科技大学 Multi-channel GaN high electron mobility transistor based on buried gate structure and manufacturing method thereof
CN115207116A (en) * 2022-07-01 2022-10-18 中山大学 Gallium oxide transistor and polarization regulation method for concentration of two-dimensional electron gas thereof
CN115332322A (en) * 2022-10-17 2022-11-11 武汉派思半导体有限公司 Multi-channel GaN HEMT device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
CN108028273B (en) Semiconductor device and method for manufacturing semiconductor device
JP4974454B2 (en) Semiconductor device
KR20220076516A (en) Stepped Field Plates Proximate Conduction Channel and Related Manufacturing Methods
CN112420850B (en) Semiconductor device and preparation method thereof
CN104022151A (en) Semi-conductor device and manufacturing method thereof
CN113555429B (en) Normally open HFET device with high breakdown voltage and low on-resistance and method of making same
CN112820648B (en) Gallium nitride metal oxide semiconductor transistor and preparation method thereof
JP2008053436A (en) Semiconductor element
CN117038711A (en) Polar gallium oxide polarized heterojunction multichannel Fin-HEMT device and preparation method thereof
JP2011124514A (en) Group-iii nitride-based semiconductor element, and method of manufacturing the same
CN113140628B (en) Semiconductor device and manufacturing method thereof
WO2020216250A1 (en) Enhanced device and preparation method therefor
CN114361121A (en) Novel diamond-based vertical GaN-HEMT device with p-SnO gate cap layer and preparation method thereof
US10804387B1 (en) Vertical superlattice transistors
CN109560135B (en) Semiconductor structure and forming method thereof
CN112768358A (en) Gallium nitride high electron mobility transistor and preparation method thereof
KR102067596B1 (en) Nitride semiconductor and method thereof
TWI797751B (en) Semiconductor structure and fabrication method thereof
US10985243B2 (en) Castellated superjunction transistors
CN116884999A (en) Polar gallium oxide polarized heterojunction HEMT device and preparation method thereof
CN117059661A (en) Fin-HEMT with strong polarization heterojunction channel and preparation method thereof
CN117012811A (en) Gallium oxide non-polarized heterojunction multichannel Fin-HEMT device and preparation method thereof
CN114823850B (en) P-type mixed ohmic contact gallium nitride transistor
JP7170940B2 (en) semiconductor equipment
CN116940228A (en) Polar gallium oxide heterojunction multichannel Gunn diode and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination