CN117038476A - 用于制造功率半导体模块的方法 - Google Patents

用于制造功率半导体模块的方法 Download PDF

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Publication number
CN117038476A
CN117038476A CN202310492292.4A CN202310492292A CN117038476A CN 117038476 A CN117038476 A CN 117038476A CN 202310492292 A CN202310492292 A CN 202310492292A CN 117038476 A CN117038476 A CN 117038476A
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Prior art keywords
liquid
semi
viscous material
substrate
cover
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CN202310492292.4A
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Inventor
M·戈尔达默
U·诺尔滕
C·施泰宁格
C·埃勒斯
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN117038476A publication Critical patent/CN117038476A/zh
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Abstract

一种用于制造功率半导体模块的方法包括：将液态、半液态或者粘性材料倾倒进由外壳的侧壁形成的腔体中，从而覆盖被布置在由侧壁形成的腔体中的衬底；将盖布置在侧壁上，从而覆盖由侧壁形成的腔体，其中，盖包括至少一个功能元件，一旦盖位于其最终安装位置上，所述功能元件将沿朝向衬底的方向从盖延伸到液态、半液态或者粘性材料中；以及使液态、半液态或者粘性材料固化，以便形成浇注化合物。

Description

用于制造功率半导体模块的方法
技术领域
本公开涉及一种用于制造功率半导体模块的方法，具体而言涉及一种用于制造包括浇注化合物(casting compound)的功率半导体模块的方法。
背景技术
功率半导体模块往往包括布置在外壳中的衬底。包括多个可控半导体元件(例如，处于半桥配置当中的两个IGBT)的半导体装置(semiconductor arrangement)可以被布置在衬底上。衬底通常包括衬底层(例如，陶瓷层)、沉积在衬底层的第一侧上的第一金属化层以及沉积在衬底层的第二侧上的第二金属化层。例如，可控半导体元件被安装在第一金属化层上。
可以采用浇注化合物来部分地填充该外壳，以保护该功率半导体模块内的，特别是该外壳内的部件和电连接，以使其免受某些环境条件、机械损害和绝缘故障的影响。在形成浇注化合物时，通常将液态、半液态或者粘性材料倾倒进该外壳中，从而形成液态或者粘性预制层(pre-layer)。随后可以进行加热步骤，在该步骤中，存在于预制层中的液体至少部分地蒸发。通过这种方式，使预制层硬化，以形成最终的浇注化合物。存在以下风险：在加热步骤期间，该外壳的盖(lid)被浇注化合物的材料浸湿。因而，材料可能无意中从该外壳泄漏出去。
需要一种制造半导体模块装置的方法，该方法防止了浇注化合物的材料从外壳泄漏出去。
发明内容
一种方法包括：将液态、半液态或者粘性材料倾倒进由外壳的侧壁形成的腔体(cavity)中，从而覆盖被布置在由侧壁形成的腔体中的衬底；将盖布置在侧壁上，从而覆盖由侧壁形成的腔体，其中，盖包括至少一个功能元件，一旦盖位于其最终安装位置上，所述功能元件将沿朝向衬底的方向从盖延伸到液态、半液态或者粘性材料中；以及使液态、半液态或者粘性材料固化，以便形成浇注化合物。
参考以下附图和描述，本发明可以得到更好的理解。附图中的部件未必是按比例绘制的，相反将重点放在示出本发明的原理。此外，在附图中，同样的附图标记在不同的附图当中表示相对应的部分。
附图说明
图1是没有浇注化合物的功率半导体模块的截面图。
图2是具有浇注化合物的功率半导体模块的截面图。
图3是在加热步骤期间在浇注化合物的材料从外壳泄漏出去的情况下功率半导体模块的示例的截面图。
图4到图7示意性地示出了根据一个示例的用于形成功率半导体模块装置的方法的顺序步骤。
具体实施方式
在下文的详细描述当中将参考附图。附图示出了可以实践本发明的特定示例。应当理解，可以将针对各种示例描述的特征和原理相互结合，除非另行具体指示。在说明书和权利要求中，将某些元件命名为“第一元件”、“第二元件”、“第三元件”等不应被理解为用作枚举。相反，这样的命名只是为了标明不同的“元件”。也就是说，例如，“第三元件”的存在不要求“第一元件”和“第二元件”的存在。本文所描述的电气线路或电连接可以是单个导电元件或者可以包括串联和/或并联连接的至少两个个体导电元件。电气线路和电连接可以包括金属和/或半导体材料，并且可以是永久性导电的(即，非可开关的)。本文所描述的半导体主体可以由(掺杂)半导体材料制成并且可以是半导体芯片或者可以包括在半导体芯片中。半导体主体具有电连接焊盘并且包括至少一个具有电极的半导体元件。
参考图1，其示出了示例性功率半导体模块的截面图。该功率半导体模块包括外壳和衬底10。衬底10包括电介质绝缘层11、附接至电介质绝缘层11的(结构化)第一金属化层111以及附接至电介质绝缘层11的第二(结构化)金属化层112。电介质绝缘层11设置在第一金属化层111和第二金属化层112之间。然而，也有可能衬底10仅包括第一金属化层111，并且省略第二金属化层112。
第一金属化层111和第二金属化层112中的每者可以由下述材料之一构成或者可以包括下述材料之一：铜；铜合金；铝；铝合金；任何其他在功率半导体模块装置的操作期间保持固态的金属或合金。衬底10可以是陶瓷衬底，即，其中的电介质绝缘层11是陶瓷的衬底，例如，薄陶瓷层。陶瓷可以由下述材料之一构成或包括下述材料之一：氧化铝；氮化铝；氧化锆；氮化硅；氮化硼或任何其他电介质陶瓷。例如，电介质绝缘层11可以由下述材料之一构成或者包括下述材料之一：Al2O3、AlN、SiC、BeO或Si3N4。例如，衬底10可以是例如直接铜接合(DCB)衬底、直接铝接合(DAB)衬底或者活性金属钎焊(AMB)衬底。此外，衬底10可以是绝缘金属衬底(IMS)。例如，绝缘金属衬底一般包括含有诸如环氧树脂或聚酰亚胺之类的(填充)材料的电介质绝缘层11。例如，可以采用陶瓷颗粒填充电介质绝缘层11的材料。这样的颗粒可以包括例如SiO2、Al2O3、AlN或BN，并且可以具有处于大约1μm和大约50μm之间的直径。衬底10还可以是具有非陶瓷电介质绝缘层11的常规印刷电路板(PCB)。例如，非陶瓷电介质绝缘层11可以由固化树脂构成或者可以包括固化树脂。
衬底10被布置在外壳中。在图1所示的示例中，衬底10布置在该外壳的地表面(ground surface)12上。该外壳进一步包括侧壁42和盖44。侧壁42和盖44是分开的元件。也就是说，在组装该功率半导体模块装置时，侧壁42可以被首先布置在衬底和/或地表面12上，此时盖仍然是敞开的。可以仅在该组装期间的以后阶段将盖44安装在侧壁42上。在一些示例中，可以省略外壳的地表面12。在这样的情况下，衬底10本身可以形成外壳的地表面。例如，衬底10也可以被布置在基板(base plate)或热沉12上。在图1的示例中，只有一个衬底10布置在地表面、基板或热沉12(下文中仅称作地表面)上。在一些功率半导体模块装置中，可以将不止一个衬底10布置在单个外壳中。例如，地表面12、侧壁42和盖44可以包括金属或金属合金。然而，例如，地表面12、侧壁42和盖44还有可能包括诸如塑料或陶瓷材料之类的电绝缘材料。例如，外壳还可以包括液晶聚合物。其他材料也是可能的。在本文所示的示例中，外壳是矩形的或者具有方形形状，并且具有四个侧壁42。然而，这只是示例。一般有可能的是外壳包括任何数量的侧壁(例如，三个、四个或甚至更多个)。侧壁的数量与本发明不相关。
衬底10可以通过连接层(图1中未具体示出)连接至地平面12。例如，这样的连接层可以是焊料层、粘合剂材料层或烧结金属粉末(例如，烧结银粉末)层。任何其他种类的导电或非导电连接层也是可能的。
可以在衬底10上布置一个或多个半导体主体20。布置在衬底10上的半导体主体20中的每者可以包括二极管、IGBT(绝缘栅双极型晶体管)、MOSFET(金属氧化物半导体场效应晶体管)、JFET(结型场效应晶体管)、HEMT(高电子迁移率晶体管)或者任何其他适当的可控半导体元件。
所述一个或多个半导体主体20可以在衬底10上形成半导体装置。在图1中，仅示例性地示出了两个半导体主体20。图1中的衬底10的第二金属化层112是连续层。图1中的示例的第一金属化层111也是连续层。然而，第一金属化层111或第二金属化层112或两者也可以是结构化层。“结构化层”是指例如相应的金属化层111、112不是连续层，而是包括处于该层的不同区段(section)之间的凹陷部。可以将不同的半导体主体20安装至第一金属化层111的相同区段或不同区段。第一金属化层111的不同区段可以不具有任何电连接，或者可以使用例如接合线而电连接至一个或多个其他区段。例如，为了略举几例，电连接还可以包括接合带、连接板或导体轨。根据另一示例，第二金属化层112可以被完全省略。所述一个或多个半导体主体20可以通过导电连接层22电及机械连接至衬底10。例如，这样的导电连接层22可以是焊料层、导电粘合剂层或者烧结金属粉末(例如，烧结银粉末)层。
该功率半导体模块可以进一步包括端子元件(terminal element)30。端子元件30电连接至衬底10，例如，电连接至衬底10的第一金属化层111，并且形成在外壳的内部和外部之间提供电连接的接触元件。端子元件30可以如图1和图2所示延伸穿过外壳，或者它们可以被形成为外壳的部分并且经由其他导体电连接至衬底10，而不与衬底10直接物理接触。端子元件30的第一端部可以通过导电连接层(未具体示出)电及机械连接至第一金属化层111。例如，这样的导电连接层可以是焊料层、导电粘合剂层或者烧结金属粉末(例如，烧结银粉末)层。端子元件30的第二端部从外壳伸出，从而允许从外部电接触到端子元件30。盖44可以包括贯穿孔或开口，端子元件30可以通过所述贯穿孔或开口伸出，使得它们的第一端部位于外壳内部，并且它们的第二端部位于外壳外部。在外壳被布置为围绕衬底10时，端子元件30可以垂直(即垂直于衬底10的顶表面)伸出外壳。根据另一个示例，端子元件30也可以穿过外壳的侧壁42水平(平行于衬底10的顶表面)伸出。
图1中所示的半导体模块装置进一步包括挤压式引脚(press-on pin)48。挤压式引脚48附接至盖44并且从盖44朝向衬底10垂直延伸。例如，挤压式引脚48接触衬底10。在图1中，挤压式引脚48被示出为在水平方向x上被布置为与不同半导体主体20相距特定距离。然而，这只是示例。一般而言，挤压式引脚48还可以被布置为紧密靠近半导体主体20中的至少一个。根据另一个示例，挤压式引脚48可以接触半导体主体20而非衬底10。如果挤压式引脚48接触半导体主体20，那么相应的半导体主体20布置在挤压式引脚48与衬底10之间。挤压式引脚48可以布置在外壳内的中心位置处。也就是说，挤压式引脚48可以被布置为与第一侧壁相距第一距离，并且与和第一侧壁相对的第二侧壁相距第二距离，其中，第一距离等于第二距离，并且挤压式引脚48可以被布置为与第三侧壁相距第三距离，并且与和第三侧壁相对的第四侧壁相距第四距离，其中，第三距离等于第四距离。然而，挤压式引脚也可以被布置在外壳内的任何其他适当位置处。
在该半导体模块装置被完全组装时，衬底10借助于挤压式引脚48被压到外壳的地表面12上，从而降低衬底10与地表面12之间的热阻。此外，由此使衬底10保持在预期位置上，并且防止衬底10在外壳内移动。在盖44被布置在侧壁42上以闭合外壳时，挤压式引脚48接触衬底10或者半导体主体20之一并且在挤压式引脚48上施加压力。图1中的粗箭头示出了在闭合外壳时盖44的移动方向以及一旦外壳被完全闭合时施加在挤压式引脚48上的压力的方向。
在图1所示的示例中，功率半导体模块装置包括多个端子元件30和多个挤压式引脚48。然而，这只是示例。一般地，功率半导体模块装置可以包括至少一个功能元件，所述至少一个功能元件包括至少一个端子元件和/或至少一个挤压式引脚48。本文所使用的词语“功能元件”是指沿垂直方向从外壳的盖44朝向衬底10延伸的任何元件，其在该功率半导体模块装置内表现出至少一个特定功能。例如，端子元件被归入功能元件一词，因为它们被配置为传导电流/电压并且在外壳的内部和外部之间传输信号。挤压式引脚48用于将衬底10朝向地平面12挤压，并因此是功能元件。然而，可以有任何其他种类的表现出其他功能并且从盖44朝向衬底10延伸的功能元件。这样的功能元件未必一直朝向衬底延伸。一般还有可能使功能元件不直接接触衬底10或者安装于其上的任何元件。
很多功率半导体模块进一步包括浇注化合物5，如图2的示例中所示。例如，浇注化合物5可以由硅酮凝胶构成或者可以包括硅酮凝胶，或者可以是刚性模制化合物。浇注化合物5可以部分地填充外壳的内部，从而覆盖衬底10和半导体主体20以及布置在衬底10上的任何其他部件和电连接24。电连接24(例如，举例而言，接合线或接合带)可以将半导体主体20电耦接至第一金属化层111、其他半导体主体20或者外壳内可布置的任何其他部件。端子元件30可以部分地嵌入在浇注化合物5中。然而，至少端子元件30的第二端部可以不被浇注化合物5覆盖，并且可以从浇注化合物5伸出。同样的情况适用于挤压式引脚48。浇注化合物5被配置为保护功率半导体模块装置内的，特别是外壳内的部件和电连接，以使其免受某些环境条件、机械损害和绝缘故障的影响。
在形成浇注化合物5时，通常将液态、半液态或者粘性材料倾倒进该外壳中，从而形成液态、半液态或者粘性预制层。一般而言，此时有可能盖44已经布置在侧壁42上。例如，盖44可以包括开口，液态、半液态或者粘性材料可以通过该开口倾倒进该外壳中。随后可以进行加热步骤，在该步骤中，存在于预制层中的液体至少部分地蒸发。通过这种方式，使预制层硬化，以形成最终的浇注化合物5。液态、半液态或者粘性材料一般在室温下被倾倒进外壳中。在随后的加热步骤期间，将液态、半液态或者粘性材料加热至可达120℃的温度或甚至更高的温度。例如，预制层的液态、半液态或者粘性材料可以被加热至60℃和120℃之间的温度。在向浇注化合物5的液态、半液态或者粘性材料施加热时，存在于该预制层中的液体蒸发并且开始交联过程(cross-linking process)。在某一时间(例如，10到20分钟)之后，材料充分固化，从而形成最终的浇注化合物5。
在加热步骤期间，液态、半液态或者粘性材料由于高温的原因而膨胀到特定程度。如上文已经描述的，特定功能元件(例如，举例而言，端子元件30或者挤压式引脚48)从外壳的盖44朝向衬底10延伸。因此，这样的功能元件的一部分嵌入在预制层的液态、半液态或者粘性材料中，而所述功能元件的另一部分则延伸到液态、半液态或者粘性材料之外并且进一步朝向盖44延伸。功率半导体模块的其他功能元件也可以是这种情况。然而，存在以下风险：当所述材料在加热步骤期间膨胀并且进一步受到例如毛细作用或者任何其他作用的影响时，所述材料在垂直方向y上沿这样的功能元件爬升至盖44的内表面，盖44的内表面是面向衬底10的表面。通过这种方式，盖44的内表面可能被预制层的材料浸湿。如果在盖44的内表面上聚集了特定量的材料，那么该材料可能沿盖44进一步爬向侧壁42。在该处，该材料可能无意中从外壳泄漏出去，尤其是在加热步骤的开始时，此时所述材料尚未充分交联并硬化。在图3中所示的装置当中，示意性地示出了材料从外壳泄漏出去。材料浸湿盖44并且从外壳泄漏出去可能对功率半导体模块的性能和寿命造成负面影响。
为了防止预计用于形成浇注化合物5的预制层的材料浸湿盖44的内侧并且从外壳泄漏出去，代替在向外壳中填充预制层的液态、半液态或者粘性材料之前将盖44安装在侧壁42上，而是先将预制层的液态、半液态或者粘性材料填充到外壳中，并且之后将盖44布置在侧壁42上。然而，在使预制层的液态、半液态或者粘性材料硬化之前将盖44布置在侧壁42上。因此，在将盖44安装在侧壁42上的同时，功能元件被浸入到预制层的液态、半液态或者粘性材料中。功能元件使预制层的液态、半液态或者粘性材料发生特定程度的位移。也就是说，在将盖44安装在侧壁上之后，预制层的液态、半液态或者粘性材料的在衬底10上方沿垂直方向y的高度增大到了特定程度。如果只有几个功能元件和/或只有具有相对较小体积的小功能元件，那么这一高度增大可以是微不足道的。如果有很多功能元件或者有具有较大体积的大功能元件，那么这一高度增大可能是稍微较大的。
当在将预制层的液态、半液态或者粘性材料填充到外壳中之后将盖44布置在侧壁42上时，可以显著减少或者甚至完全避免材料沿功能元件朝向盖44的内表面爬升并从该内表面向外壳外泄漏的发生。功能元件垂直插入到预制层的液态、半液态或者粘性材料中对毛细作用或者任何其他作用具有显著影响。尽管在盖44已经被布置在侧壁上之后将预制层的液态、半液态或者粘性材料填充到外壳中的那样情况下会发生毛细作用或其他作用，但是通过在将预制层的液态、半液态或者粘性材料填充到外壳中之后将盖44布置在侧壁42上可以减少或者甚至完全避免这样的作用。
现在参考图4到图7，其示意性地示出了一种示例性方法。如图4中所示，衬底10(其上安装了半导体主体20以及其他元件和部件)布置在地表面12上。侧壁42被布置为围绕衬底10。在图5中示意性所示的接下来的步骤中，将预制层的液态、半液态或者粘性材料填充到外壳中(即，填充到由侧壁42形成的腔体中)，以覆盖衬底10和安装于其上的部件。然而，预制层的液态、半液态或者粘性材料不完全填充由侧壁42形成的腔体。该腔体的至少部分保持没有预制层的液态、半液态或者粘性材料。
现在参考图6，其上附接了功能元件的盖44被安装在侧壁42上。未被预制层的液态、半液态或者粘性材料填充的体积保留在预制层的液态、半液态或者粘性材料与盖44的内表面之间。也就是说，盖44的内表面不与预制层的液态、半液态或者粘性材料直接接触。在图7中示意性示出的后续步骤中，对预制层的液态、半液态或者粘性材料进行硬化/固化，从而形成了最终的浇注化合物5。
针对图4到图7所描述的方法具有几个进一步的优点。例如，在将预制层的液态、半液态或者粘性材料填充到外壳中的步骤期间，由侧壁42形成的整个开口都保持可用。也就是说，可以自由选择喷嘴的位置并且该位置不受盖44中提供的相对较小的开口的限制，其中通过该喷嘴向外壳中注入液态、半液态或者粘性材料。甚至有可能采用位于不同位置处的多个喷嘴。通过这种方式，可以在更短的时间内将液态、半液态或者粘性材料填充到外壳中，这将带来成本的下降。

Claims (7)

1.一种方法，包括：
将液态、半液态或者粘性材料倾倒进由外壳的侧壁(42)形成的腔体中，从而覆盖被布置在由所述侧壁(42)形成的所述腔体中的衬底(10)；
将盖(44)布置在所述侧壁(42)上，从而覆盖由所述侧壁(42)形成的所述腔体，其中，所述盖(44)包括至少一个功能元件，一旦所述盖(44)位于其最终安装位置上，所述功能元件将沿朝向所述衬底(10)的方向从所述盖(44)延伸到所述液态、半液态或者粘性材料中；以及
使所述液态、半液态或者粘性材料固化，以便形成浇注化合物(5)。
2.根据权利要求1所述的方法，其中，使所述液态、半液态或者粘性材料固化的步骤包括将所述液态、半液态或者粘性材料加热至在60℃和120℃之间的温度。
3.根据权利要求2所述的方法，其中，将所述液态、半液态或者粘性材料加热至在60℃和120℃之间的温度且持续10到20分钟之间的时间。
4.根据权利要求1到3中的任何一项所述的方法，其中，在将所述液态、半液态或者粘性材料倾倒进由所述侧壁(42)形成的所述腔体中时，由所述侧壁(42)形成的所述腔体仅部分地被所述液态、半液态或者粘性材料填充，从而在将所述盖(44)布置在所述侧壁(42)上之后在所述液态、半液态或者粘性材料与所述盖(44)之间保留有空间。
5.根据权利要求1到4中的任何一项所述的方法，其中，在将所述盖(44)布置在所述侧壁(42)上的步骤期间，所述至少一个功能元件使所述液态、半液态或者粘性材料发生位移。
6.根据权利要求1到5中的任何一项所述的方法，其中，将液态、半液态或者粘性材料倾倒进由外壳的侧壁(42)形成的腔体中的步骤包括将硅酮凝胶倾倒进所述腔体中。
7.根据前述权利要求中的任何一项所述的方法，进一步包括在将所述液态、半液态或者粘性材料倾倒进由所述侧壁形成的所述腔体中之前，将至少一个半导体主体(20)安装在所述衬底(10)上。
CN202310492292.4A 2022-05-09 2023-05-04 用于制造功率半导体模块的方法 Pending CN117038476A (zh)

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