CN117015224B - Electromagnetic shielding device and system for keeping superconducting state of Josephson junction - Google Patents

Electromagnetic shielding device and system for keeping superconducting state of Josephson junction Download PDF

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CN117015224B
CN117015224B CN202311269438.5A CN202311269438A CN117015224B CN 117015224 B CN117015224 B CN 117015224B CN 202311269438 A CN202311269438 A CN 202311269438A CN 117015224 B CN117015224 B CN 117015224B
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isolation layer
shielding unit
josephson junction
magnetic shielding
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CN117015224A (en
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黄奇峰
徐晴
陈铭明
王思云
李志新
卢树峰
王忠东
易永仙
鲍进
曹晓冬
夏国芳
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Marketing Center of State Grid Jiangsu Electric Power Co Ltd
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Abstract

本发明涉及一种保持约瑟夫森结超导状态的电磁屏蔽装置及系统,所述装置包括至少两个同心间隔套设的磁屏蔽单元,每个磁屏蔽单元均包括一端封闭的圆柱体和与所述圆柱体另一端紧密配合的可拆卸盖体;所述圆柱体的内壁面和/或外壁面上设有非磁性隔离层,且在相邻磁屏蔽单元之间至少具有一个非磁性隔离层;根据约瑟夫森结周围环境的磁场强度和电磁屏蔽装置的目标屏蔽效能,确定磁屏蔽单元的尺寸和非磁性隔离层的厚度,且将每个磁屏蔽单元内设为真空,以保持约瑟夫森结超导状态。本发明提供的电磁屏蔽装置及系统,结构简单,可设计性强,能够稳定有效的实现对约瑟夫森结芯片的电磁屏蔽。

The invention relates to an electromagnetic shielding device and system for maintaining the superconducting state of the Josephson junction. The device includes at least two concentrically spaced magnetic shielding units. Each magnetic shielding unit includes a cylinder with one end closed and a A removable cover that fits closely at the other end of the cylinder; a non-magnetic isolation layer is provided on the inner wall surface and/or the outer wall surface of the cylinder, and there is at least one non-magnetic isolation layer between adjacent magnetic shielding units; According to the magnetic field strength of the environment around the Josephson junction and the target shielding effectiveness of the electromagnetic shielding device, determine the size of the magnetic shielding unit and the thickness of the non-magnetic isolation layer, and set a vacuum inside each magnetic shielding unit to keep the Josephson junction super guidance status. The electromagnetic shielding device and system provided by the present invention have a simple structure and strong designability, and can stably and effectively realize electromagnetic shielding of the Josephson junction chip.

Description

一种保持约瑟夫森结超导状态的电磁屏蔽装置及系统An electromagnetic shielding device and system that maintains the superconducting state of Josephson junction

技术领域Technical field

本发明属于电磁屏蔽技术领域,特别涉及一种保持约瑟夫森结超导状态的电磁屏蔽装置及系统。The invention belongs to the technical field of electromagnetic shielding, and particularly relates to an electromagnetic shielding device and system that maintains the superconducting state of the Josephson junction.

背景技术Background technique

一个区域中磁场的存在是由磁通量源引起的,磁通量源可能是地球、电机、变压器、电力线等,某一位置的磁场强度取决于磁场源以及该位置与磁场源的距离。在量子电压系统中,适当的电磁屏蔽对于将约瑟夫森结芯片与这些电磁场隔离至关重要。增加与磁场辐射源的距离会降低被屏蔽的磁场强度,因此将芯片与已知电磁场源隔离的最佳做法是将芯片移出电磁场,然而这通常是不可能的。有许多屏蔽材料可以用来进一步减少进入的电磁场。为了开发和设计有效的磁屏蔽,必须首先测量要屏蔽区域周围的磁场强度,并估计电磁噪声的来源。在约瑟夫森电压标准系统中,对约瑟夫森结阵列芯片进行电磁屏蔽并在附近保持非常低的磁噪声水平是至关重要的。在免液氦量子电压系统中,基于闭合循环制冷(CCR)的冷却系统使用两级4.2 K吉福德-麦克马洪(GM)低温冷却器和真空泵来实现操作温度;使用这些系统的缺点是它们是机电噪声的主要来源,并且非常靠近约瑟夫森芯片,由于无法消除噪声源,也无法显著增加分隔距离,因此必须在芯片周围精心设计磁屏蔽,以获得非常低的磁场区域。如专利CN101059556A提供一种超导量子比特测量系统,其将被测的约瑟夫森结放置在金属样品盒内,特别是使用超导金属铝材料制作样品盒,测量时被测的约瑟夫森结及样品盒处于mk量级的温度环境中,而铝在温度降到1.14k后会转变为超导体,就成为被测的约瑟夫森结外围的超导屏蔽层,可进一步减小外部环境噪声对样品的干扰,该专利虽然具有一定超导屏蔽效果,但是需要对铝进行持续降温,并且其屏蔽效果也无法稳定持续保证。The existence of a magnetic field in an area is caused by a magnetic flux source. The magnetic flux source may be the earth, a motor, a transformer, a power line, etc. The strength of the magnetic field at a certain location depends on the magnetic field source and the distance of the location from the magnetic field source. In quantum voltage systems, proper electromagnetic shielding is critical to isolating the Josephson junction chip from these electromagnetic fields. Increasing distance from the source of magnetic field radiation reduces the strength of the shielded magnetic field, so the best way to isolate a chip from a known source of electromagnetic fields is to move the chip out of the electromagnetic field, however this is often not possible. There are many shielding materials that can be used to further reduce the incoming electromagnetic fields. In order to develop and design effective magnetic shielding, one must first measure the magnetic field strength around the area to be shielded and estimate the source of the electromagnetic noise. In a Josephson voltage standard system, it is critical to electromagnetically shield the Josephson junction array chip and maintain very low magnetic noise levels in the vicinity. In liquid helium-free quantum voltage systems, closed cycle refrigeration (CCR) based cooling systems use two-stage 4.2 K Gifford-McMahon (GM) cryogenic coolers and vacuum pumps to achieve operating temperatures; the disadvantages of using these systems are They are a major source of electromechanical noise and are located very close to the Josephson chip. Since the noise source cannot be eliminated or the separation distance significantly increased, magnetic shielding must be carefully designed around the chip to obtain a very low magnetic field region. For example, patent CN101059556A provides a superconducting qubit measurement system, which places the Josephson junction under test in a metal sample box. In particular, the sample box is made of superconducting metal aluminum material. During measurement, the Josephson junction under test and the sample are The box is in a temperature environment of the order of mk, and aluminum will transform into a superconductor after the temperature drops to 1.14k, and it will become a superconducting shielding layer around the Josephson junction under test, which can further reduce the interference of external environmental noise on the sample , although this patent has a certain superconducting shielding effect, it requires continuous cooling of the aluminum, and its shielding effect cannot be guaranteed stably and continuously.

因此,如何提供一种结构简单、能耗低、电磁屏蔽效果良好,且应用场景广泛的能够稳定有效保持约瑟夫森结超导状态的电磁屏蔽装置是本领域亟待解决的技术问题。Therefore, how to provide an electromagnetic shielding device with a simple structure, low energy consumption, good electromagnetic shielding effect, and a wide range of application scenarios that can stably and effectively maintain the Josephson junction superconducting state is an urgent technical problem in this field that needs to be solved.

发明内容Contents of the invention

针对上述现有技术中存在的缺陷,本发明提供一种保持约瑟夫森结超导状态的电磁屏蔽装置及系统,可以实现对约瑟夫森结芯片的电磁屏蔽。In view of the above-mentioned defects in the prior art, the present invention provides an electromagnetic shielding device and system that maintains the superconducting state of the Josephson junction, which can realize electromagnetic shielding of the Josephson junction chip.

本发明提供了一种保持约瑟夫森结超导状态的电磁屏蔽装置,所述装置包括至少两个同心间隔套设的磁屏蔽单元,其中,The invention provides an electromagnetic shielding device that maintains the superconducting state of the Josephson junction. The device includes at least two concentrically spaced magnetic shielding units, wherein,

每个磁屏蔽单元均包括一端封闭的圆柱体和与所述圆柱体另一端紧密配合的可拆卸盖体;Each magnetic shielding unit includes a cylinder with one end closed and a removable cover that tightly fits the other end of the cylinder;

所述圆柱体的内壁面和/或外壁面上设有非磁性隔离层,且在相邻磁屏蔽单元之间至少具有一个非磁性隔离层;A non-magnetic isolation layer is provided on the inner wall surface and/or the outer wall surface of the cylinder, and there is at least one non-magnetic isolation layer between adjacent magnetic shielding units;

根据约瑟夫森结周围环境的磁场强度和电磁屏蔽装置的目标屏蔽效能,确定磁屏蔽单元的尺寸和非磁性隔离层的厚度,且将每个磁屏蔽单元内设为真空,以保持约瑟夫森结超导状态。According to the magnetic field strength of the environment around the Josephson junction and the target shielding effectiveness of the electromagnetic shielding device, determine the size of the magnetic shielding unit and the thickness of the non-magnetic isolation layer, and set a vacuum inside each magnetic shielding unit to keep the Josephson junction super guidance status.

进一步的,磁屏蔽单元为圆柱体,并且竖直设置。可以避免地磁场对电磁屏蔽装置的影响,破坏其磁屏蔽效果。Further, the magnetic shielding unit is a cylinder and is arranged vertically. It can avoid the influence of the earth's magnetic field on the electromagnetic shielding device and destroy its magnetic shielding effect.

进一步的,内径最小的磁屏蔽单元的内腔直径为15~20cm,即位于最内侧的磁屏蔽单元的内腔直径为15~20cm。Furthermore, the inner cavity diameter of the magnetic shielding unit with the smallest inner diameter is 15 to 20 cm, that is, the inner cavity diameter of the innermost magnetic shielding unit is 15 to 20 cm.

进一步的,其中每个磁屏蔽单元的外径确定,具体包括:Further, the outer diameter of each magnetic shielding unit is determined, specifically including:

,

其中,B是磁屏蔽单元的磁通量密度,D是磁屏蔽单元的外径,H0是以奥斯特为单位的磁屏蔽单元周围环境的磁场强度,d"是磁屏蔽单元的厚度,α为磁通量密度系数。Among them, B is the magnetic flux density of the magnetic shielding unit, D is the outer diameter of the magnetic shielding unit, H 0 is the magnetic field intensity of the environment around the magnetic shielding unit in Oersted units, d" is the thickness of the magnetic shielding unit, α is Magnetic flux density coefficient.

优选地,α为1.25,即每个磁屏蔽单元的尺寸满足以下关系:Preferably, α is 1.25, that is, the size of each magnetic shielding unit satisfies the following relationship:

.

进一步的,所述磁屏蔽单元采用高导磁合金制成,具体为MuMetal材料,非磁性隔离层包括无氧铜(OFHC铜)。Furthermore, the magnetic shielding unit is made of highly magnetically permeable alloy, specifically MuMetal material, and the non-magnetic isolation layer includes oxygen-free copper (OFHC copper).

进一步的,所述非磁性隔离层设于磁屏蔽单元内壁面和/或外壁面,并且每个非磁性隔离层的厚度相同,每个磁屏蔽单元的厚度相同;Further, the non-magnetic isolation layer is provided on the inner wall surface and/or the outer wall surface of the magnetic shielding unit, and the thickness of each non-magnetic isolation layer is the same, and the thickness of each magnetic shielding unit is the same;

非磁性隔离层厚度的确定包括:Determination of the thickness of the non-magnetic isolation layer includes:

根据电磁屏蔽装置周围环境的磁场强度和约瑟夫森结的临界磁场得到电磁屏蔽装置的目标屏蔽效能;The target shielding effectiveness of the electromagnetic shielding device is obtained according to the magnetic field strength of the environment around the electromagnetic shielding device and the critical magnetic field of the Josephson junction;

根据每个磁屏蔽单元的内径和外径,得到每个磁屏蔽单元上设置的非磁性隔离层的外径或内径;According to the inner diameter and outer diameter of each magnetic shielding unit, the outer diameter or inner diameter of the non-magnetic isolation layer provided on each magnetic shielding unit is obtained;

根据每个磁屏蔽单元的内径、外径和磁导率,以及每个非磁性隔离层的外径、内径、相对磁导率和电导率,得到每个磁屏蔽单元和每个非磁性隔离层的屏蔽效能;According to the inner diameter, outer diameter and magnetic permeability of each magnetic shielding unit, and the outer diameter, inner diameter, relative magnetic permeability and electrical conductivity of each non-magnetic isolation layer, each magnetic shielding unit and each non-magnetic isolation layer are obtained The shielding effectiveness;

根据每个磁屏蔽单元的厚度与内径和外径的对应关系,每个非磁性隔离层的厚度与内径和外径的对应关系,电磁屏蔽装置的目标屏蔽效能,以及每个磁屏蔽单元和每个非磁性隔离层的屏蔽效能,得到每个非磁性隔离层的厚度;According to the corresponding relationship between the thickness of each magnetic shielding unit and the inner diameter and outer diameter, the corresponding relationship between the thickness of each non-magnetic isolation layer and the inner diameter and outer diameter, the target shielding effectiveness of the electromagnetic shielding device, and the corresponding relationship between each magnetic shielding unit and each The shielding effectiveness of each non-magnetic isolation layer is obtained by obtaining the thickness of each non-magnetic isolation layer;

进一步的,每个非磁性隔离层的厚度,满足以下关系:Further, the thickness of each non-magnetic isolation layer satisfies the following relationship:

,

式中,d'为每个非磁性隔离层的厚度,r'外,i为第i个非磁性隔离层的外径,r'内,i为第i个非磁性隔离层的内径,n为非磁性隔离层的层数,μ0为真空磁导率,μ1为非磁性隔离层的相对磁导率,ω为磁场角频率,为非磁性隔离层的电导率,y为虚部,d"为每个磁屏蔽单元的厚度,r"外,j为第j个磁屏蔽单元的外径,r"内,j为第j个磁屏蔽单元的内径,m为磁屏蔽单元的数量,m≤n,μ2为磁屏蔽单元的磁导率,a'、b'、a"、b"均为常数,H为电磁屏蔽装置周围环境的磁场强度,Bc为临界磁场。In the formula, d' is the thickness of each non-magnetic isolation layer, outside r', i is the outer diameter of the i-th non-magnetic isolation layer, inside r', i is the inner diameter of the i-th non-magnetic isolation layer, and n is The number of layers of non-magnetic isolation layer, μ 0 is the vacuum magnetic permeability, μ 1 is the relative magnetic permeability of the non-magnetic isolation layer, ω is the angular frequency of the magnetic field, is the conductivity of the non-magnetic isolation layer, y is the imaginary part, d" is the thickness of each magnetic shielding unit, outside r", j is the outer diameter of the jth magnetic shielding unit, inside r", j is the jth magnetic shielding unit The inner diameter of the magnetic shielding unit, m is the number of magnetic shielding units, m≤n, μ 2 is the magnetic permeability of the magnetic shielding unit, a', b', a", b" are all constants, H is the surrounding area of the electromagnetic shielding device The magnetic field strength of the environment, B c is the critical magnetic field.

进一步的,所述非磁性隔离层通过磁控溅射形成;Further, the non-magnetic isolation layer is formed by magnetron sputtering;

其中,以直流电源作用时间、高功率脉冲电源作用时间以及离子源作用时间为一个周期,通过多个周期在磁屏蔽单元的内壁面和/或外壁面形成预定厚度的非磁性隔离层。Among them, the action time of the DC power supply, the action time of the high-power pulse power supply and the action time of the ion source are regarded as one cycle, and a non-magnetic isolation layer with a predetermined thickness is formed on the inner wall surface and/or the outer wall surface of the magnetic shielding unit through multiple cycles.

进一步的,每个周期内直流电源作用时间、高功率脉冲电源作用时间以及离子源作用时间分别为20~40min、200~300min、6~8min。Furthermore, the action time of DC power supply, high-power pulse power supply and ion source in each cycle are 20~40min, 200~300min, and 6~8min respectively.

第二方面,还提供一种约瑟夫森电压系统,所述系统包括:In a second aspect, a Josephson voltage system is also provided, and the system includes:

上述保持约瑟夫森结超导状态的电磁屏蔽装置;The above-mentioned electromagnetic shielding device for maintaining the superconducting state of the Josephson junction;

约瑟夫森结芯片,其位于所述电磁屏蔽装置内部,并具有约瑟夫森结,所述约瑟夫森结芯片至少位于所述两个同心间隔的磁屏蔽单元的几何中心。A Josephson junction chip is located inside the electromagnetic shielding device and has a Josephson junction. The Josephson junction chip is at least located at the geometric center of the two concentrically spaced magnetic shielding units.

进一步的,电磁屏蔽装置内设置有温度传感器和磁场传感器,并且温度传感器和磁场传感器靠近所述约瑟夫森结芯片设置。Further, a temperature sensor and a magnetic field sensor are provided in the electromagnetic shielding device, and the temperature sensor and the magnetic field sensor are placed close to the Josephson junction chip.

进一步的,约瑟夫森电压系统还包括调节磁屏蔽单元周围环境温度的控制器,以及设于内径最大的磁屏蔽单元上的连接器,连接器将与温度传感器、磁场传感器分别与控制器可断开的连接。Furthermore, the Josephson voltage system also includes a controller that adjusts the ambient temperature around the magnetic shielding unit, and a connector located on the magnetic shielding unit with the largest inner diameter. The connector can be disconnected from the temperature sensor and magnetic field sensor respectively from the controller. Connection.

进一步的,所述系统包括:在温度传感器检测的温度结果不大于约瑟夫森结芯片的临界温度时,连接器与控制器连通,控制器根据温度传感器检测的温度结果调节磁屏蔽单元周围环境的温度,在温度传感器检测的温度结果大于约瑟夫森结芯片的临界温度时,连接器与控制器断开。Further, the system includes: when the temperature result detected by the temperature sensor is not greater than the critical temperature of the Josephson junction chip, the connector is connected to the controller, and the controller adjusts the temperature of the environment around the magnetic shielding unit according to the temperature result detected by the temperature sensor. , when the temperature result detected by the temperature sensor is greater than the critical temperature of the Josephson junction chip, the connector is disconnected from the controller.

进一步的,控制器根据温度传感器检测的温度结果调节磁屏蔽单元周围环境的温度,还包括:Further, the controller adjusts the temperature of the environment around the magnetic shielding unit based on the temperature result detected by the temperature sensor, which also includes:

获取温度传感器检测的当前温度结果,以及预定时间段内的温度结果;Obtain the current temperature results detected by the temperature sensor and the temperature results within a predetermined time period;

根据温度传感器检测的温度结果,得到温度变化率;According to the temperature result detected by the temperature sensor, the temperature change rate is obtained;

根据温度变化率得到磁屏蔽单元内的温度变化状态;According to the temperature change rate, the temperature change state in the magnetic shielding unit is obtained;

根据温度变化状态、当前温度结果和温度阈值,调节磁屏蔽单元周围环境温度至预设值。According to the temperature change status, current temperature result and temperature threshold, adjust the ambient temperature around the magnetic shielding unit to the preset value.

其中,温度变化状态包括升温、恒温和降温状态;Among them, the temperature change state includes heating, constant and cooling states;

根据温度变化状态、当前温度结果和温度阈值,调节磁屏蔽单元周围环境温度至预设值,包括:According to the temperature change status, current temperature results and temperature threshold, adjust the ambient temperature around the magnetic shielding unit to the preset value, including:

当温度变化状态为升温状态,且当前温度结果小于温度阈值时,以及当温度变化状态为降温状态,且当前温度结果大于温度阈值时,调节磁屏蔽单元周围环境温度不变;When the temperature change state is a heating state and the current temperature result is less than the temperature threshold, and when the temperature change state is a cooling state and the current temperature result is greater than the temperature threshold, adjust the ambient temperature around the magnetic shielding unit to remain unchanged;

当温度变化状态为升温状态,且当前温度结果不小于温度阈值时,以及当温度变化状态为恒温状态,且当前温度结果大于温度阈值时,降低磁屏蔽单元周围环境温度;When the temperature change state is a heating state and the current temperature result is not less than the temperature threshold, and when the temperature change state is a constant temperature state and the current temperature result is greater than the temperature threshold, reduce the ambient temperature around the magnetic shielding unit;

当温度变化状态为恒温或降温状态,且当前温度结果不大于温度阈值时,调节磁屏蔽单元周围环境温度至预定温度;优选地,预定温度为4K。When the temperature change state is a constant temperature or cooling state, and the current temperature result is not greater than the temperature threshold, adjust the ambient temperature around the magnetic shielding unit to a predetermined temperature; preferably, the predetermined temperature is 4K.

本发明提供的一种保持约瑟夫森结超导状态的电磁屏蔽装置及系统,至少包括如下有益效果:The invention provides an electromagnetic shielding device and system for maintaining the superconducting state of the Josephson junction, which at least includes the following beneficial effects:

本发明与单个磁屏蔽单元相比,通过设置至少两个磁屏蔽单元,可以实现连续的屏蔽。通过连续屏蔽的倍增效应提供了显著的磁场衰减,并且防止了屏蔽的饱和。并且通过设置与磁屏蔽单元配合的非磁性隔离层,可以共同实现对约瑟夫森结芯片的磁性屏蔽。其中,通过磁屏蔽单元和非磁性隔离层分别实现对周围环境中低频磁场和高频磁场的屏蔽,从而提高电磁屏蔽装置的应用场景,并且可以提高对约瑟夫森结芯片的磁性屏蔽效果。Compared with a single magnetic shielding unit, the present invention can achieve continuous shielding by arranging at least two magnetic shielding units. The multiplication effect through successive shields provides significant magnetic field attenuation and prevents saturation of the shield. And by setting up a non-magnetic isolation layer that cooperates with the magnetic shielding unit, the magnetic shielding of the Josephson junction chip can be jointly achieved. Among them, the magnetic shielding unit and the non-magnetic isolation layer are used to shield the low-frequency magnetic field and the high-frequency magnetic field in the surrounding environment respectively, thereby improving the application scenarios of the electromagnetic shielding device and improving the magnetic shielding effect on the Josephson junction chip.

通过将约瑟夫森结芯片设置于磁屏蔽单元的几何中心,可以使得约瑟夫森结芯片周围的磁场均匀对称,且使得约瑟夫森结芯片所受的磁场影响最小。By disposing the Josephson junction chip at the geometric center of the magnetic shielding unit, the magnetic field around the Josephson junction chip can be made uniform and symmetrical, and the influence of the magnetic field on the Josephson junction chip can be minimized.

通过选择合适的磁屏蔽单元和非磁性隔离层尺寸,可以在降低成本的基础上,保证内侧的真空度、温度和磁屏蔽满足预定要求。By selecting the appropriate size of the magnetic shielding unit and non-magnetic isolation layer, it is possible to ensure that the inner vacuum, temperature and magnetic shielding meet predetermined requirements while reducing costs.

附图说明Description of the drawings

图1示出了本发明实施例的一种保持约瑟夫森结超导状态的电磁屏蔽装置的示意图;Figure 1 shows a schematic diagram of an electromagnetic shielding device that maintains the superconducting state of the Josephson junction according to an embodiment of the present invention;

图2示出了本发明实施例的一种约瑟夫森电压系统的示意图。Figure 2 shows a schematic diagram of a Josephson voltage system according to an embodiment of the present invention.

附图标记说明:10-电磁屏蔽装置,11-磁屏蔽单元,2-约瑟夫森结芯片,3-磁场传感器,4-温度传感器,5-连接器,6-控制器。Explanation of reference signs: 10-electromagnetic shielding device, 11-magnetic shielding unit, 2-Josephson junction chip, 3-magnetic field sensor, 4-temperature sensor, 5-connector, 6-controller.

具体实施方式Detailed ways

为了使本发明的目的、技术方案和优点更加清楚,下面结合附图详细说明本发明的可选实施例。In order to make the purpose, technical solutions and advantages of the present invention clearer, optional embodiments of the present invention are described in detail below with reference to the accompanying drawings.

在约瑟夫森结中,库珀对电子的结合能很小,对任何外部激发源都非常敏感。外部磁场的存在会对电子自旋施加扭矩,其往往会破坏这些库珀对,随着库珀对分离成单个电子,该约瑟夫森结将成为正常导体或“非超导体”。当磁场高于与超导体材料相关的特定值时,库珀对会断裂;这个磁场值被称为临界磁场,并且取决于所涉及的材料。In the Josephson junction, the binding energy of Cooper's electrons is very small and is very sensitive to any external excitation source. The presence of an external magnetic field exerts a torque on the electron spins, which tends to destroy these Cooper pairs, and as the Cooper pairs separate into individual electrons, the Josephson junction becomes a normal conductor or "non-superconductor." Cooper pairs break when the magnetic field is above a specific value associated with superconducting materials; this magnetic field value is called the critical magnetic field and depends on the material involved.

超导态不能存在于大于临界磁场的磁场中,即使在绝对零度。这个临界磁场与超导体的临界温度密切相关,而超导体的临界温度又与带隙相关。临界温度和临界场是代表可以以开始干扰超导机制的方式提供给材料的能量的参数。根据迈斯纳效应,超导体的本质是排斥磁场,但这只有在外加磁场不超过其临界磁场时才成立。临界磁场值通常在0 K时建立,随着温度的升高,磁场值逐渐减小,直到在超导临界温度时达到零。低于临界温度的任何温度(T)下的临界磁场(Bc)由以下关系式给出:Superconducting states cannot exist in magnetic fields greater than the critical magnetic field, even at absolute zero. This critical magnetic field is closely related to the critical temperature of the superconductor, which in turn is related to the band gap. Critical temperature and critical field are parameters that represent the amount of energy that can be supplied to a material in a way that begins to interfere with the superconducting mechanism. According to the Meissner effect, the essence of a superconductor is a repulsive magnetic field, but this is true only when the external magnetic field does not exceed its critical magnetic field. The critical magnetic field value is usually established at 0 K. As the temperature increases, the magnetic field value gradually decreases until it reaches zero at the superconducting critical temperature. The critical magnetic field (B c ) at any temperature (T) below the critical temperature is given by:

,

其中,Bc(0)是在0 K时抑制超导所需的磁场,Tc是材料的临界温度。约瑟夫森结对任何磁场都高度敏感,并且容易受到低至几高斯的磁场的影响。where B c (0) is the magnetic field required to suppress superconductivity at 0 K, and T c is the critical temperature of the material. The Josephson junction is highly sensitive to any magnetic field and is susceptible to magnetic fields as low as a few Gauss.

参见图1所示,本发明为了实现对约瑟夫森结芯片2进行磁屏蔽,提供了一种保持约瑟夫森结超导状态的电磁屏蔽装置10,所述装置包括至少两个同心间隔的磁屏蔽单元11,其中,Referring to Figure 1, in order to achieve magnetic shielding of the Josephson junction chip 2, the present invention provides an electromagnetic shielding device 10 that maintains the superconducting state of the Josephson junction. The device includes at least two concentrically spaced magnetic shielding units. 11, among which,

每个磁屏蔽单元11均包括一端封闭的圆柱体和与所述圆柱体另一端紧密配合的可拆卸盖体;Each magnetic shielding unit 11 includes a cylinder with one end closed and a detachable cover that tightly fits the other end of the cylinder;

所述圆柱体的内壁面和/或外壁面上设有非磁性隔离层,且在相邻磁屏蔽单元11之间至少具有一个非磁性隔离层;A non-magnetic isolation layer is provided on the inner wall surface and/or the outer wall surface of the cylinder, and there is at least one non-magnetic isolation layer between adjacent magnetic shielding units 11;

根据约瑟夫森结周围环境的磁场强度和电磁屏蔽装置10的目标屏蔽效能,确定磁屏蔽单元11的尺寸和非磁性隔离层的厚度,且将每个磁屏蔽单元11内设为真空,以保持约瑟夫森结超导状态。According to the magnetic field strength of the environment around the Josephson junction and the target shielding effectiveness of the electromagnetic shielding device 10, the size of the magnetic shielding unit 11 and the thickness of the non-magnetic isolation layer are determined, and each magnetic shielding unit 11 is set to a vacuum to maintain the Josephson junction. Sen junction superconducting state.

本发明电磁屏蔽装置10中的磁屏蔽单元11的数量和尺寸可以根据实际应用场景的环境参数进行对应选择,例如,在电磁屏蔽装置10的周围环境磁场强度较大时,可以设置数量较多的磁屏蔽单元11,也可以选择一定厚度的磁屏蔽单元11和非磁性隔离层形成的层级结构,从而实现对当前环境下的电磁屏蔽。非磁性隔离层包括OFHC铜材料(无氧铜),可以进一步提高对磁性的隔离效果。为了提高屏蔽效果,需要磁屏蔽单元11的内腔直径尽可能小,因为衰减与直径成反比,磁屏蔽的尺寸是基于环境场的近似值和通量密度的期望水平来计算的。优选地,两个磁屏蔽单元11的内腔直径15~20cm,使其在基于特定材料进行屏蔽的基础上,通过选取合适的直径范围,使得本发明的电磁屏蔽装置10具有更优异的磁屏蔽效果。具体的,本发明通过选择合适的磁屏蔽单元11尺寸,可以在降低成本的基础上,保证内侧的真空度、温度和磁屏蔽满足预定要求。例如,当内侧的磁屏蔽单元11的内腔直径大于20cm时,虽然可以具有较好的屏蔽效果,但是由于其直径较大,导致磁屏蔽单元11的成本提高,同时也容易出现安装困难的问题。当内侧的磁屏蔽单元11的内腔直径小于15cm时,其虽然具有安装方便,且所需的成本较低,但是较小的磁屏蔽单元11尺寸无法使得内部环境真空度、温度和磁屏蔽达到预定的效果。The number and size of the magnetic shielding units 11 in the electromagnetic shielding device 10 of the present invention can be selected according to the environmental parameters of the actual application scenario. For example, when the magnetic field intensity of the surrounding environment of the electromagnetic shielding device 10 is relatively high, a larger number of magnetic shielding units 11 can be installed. For the magnetic shielding unit 11, a hierarchical structure formed by a certain thickness of the magnetic shielding unit 11 and a non-magnetic isolation layer can also be selected to achieve electromagnetic shielding in the current environment. The non-magnetic isolation layer includes OFHC copper material (oxygen-free copper), which can further improve the magnetic isolation effect. In order to improve the shielding effect, the inner cavity diameter of the magnetic shielding unit 11 needs to be as small as possible, because attenuation is inversely proportional to the diameter, and the size of the magnetic shielding is calculated based on the approximate value of the environmental field and the expected level of flux density. Preferably, the inner cavity diameter of the two magnetic shielding units 11 is 15~20cm, so that on the basis of shielding based on specific materials, by selecting an appropriate diameter range, the electromagnetic shielding device 10 of the present invention has better magnetic shielding. Effect. Specifically, by selecting an appropriate size of the magnetic shielding unit 11, the present invention can ensure that the inner vacuum degree, temperature and magnetic shielding meet predetermined requirements on the basis of reducing costs. For example, when the inner cavity diameter of the inner magnetic shielding unit 11 is greater than 20 cm, although it can have a better shielding effect, due to its larger diameter, the cost of the magnetic shielding unit 11 increases, and it is also prone to difficulty in installation. . When the inner cavity diameter of the inner magnetic shielding unit 11 is less than 15cm, although it is easy to install and requires low cost, the smaller size of the magnetic shielding unit 11 cannot make the internal environment vacuum, temperature and magnetic shielding reach the predetermined effect.

磁屏蔽单元11是用具有高导磁合金材料制成的。由于磁场既不能产生也不能消除,磁屏蔽单元11的目的是以这样一种方式重新分布磁场,即在要屏蔽的约瑟夫森结芯片2周围产生一个零磁场或很低磁场的区域。高导磁率材料通过将磁场拉向自身并远离待屏蔽的约瑟夫森结芯片2来屏蔽约瑟夫森结芯片2所在区域。本发明在通过磁屏蔽单元11实现对电磁的屏蔽时,通过对磁屏蔽单元11的材料进行选择,使其具有较好的屏蔽效果。优选地,本发明磁屏蔽单元11采用MuMetal材料制成。MuMetal屏蔽具有吸收磁能的能力,并通过将磁场集中在MuMetal屏蔽自身内而产生非常高的衰减,使这些屏蔽合金成为降低低频电磁干扰(EMI)的首选材料。由于约瑟夫森结芯片2的运行环境要求更高,磁屏蔽效果需要满足预定要求,因此,通过用高磁导率金属制造两个同心间隔的磁屏蔽单元11,为约瑟夫森结芯片2制造了一个极低磁场区域的外壳。因为磁场源非常强并且靠近约瑟夫森结芯片2,所以与同等壁厚的单个磁屏蔽相比,连续屏蔽的倍增效应提供了显著更大的磁场衰减,并且防止了屏蔽的饱和。The magnetic shielding unit 11 is made of alloy material with high magnetic permeability. Since magnetic fields can neither be generated nor eliminated, the purpose of the magnetic shielding unit 11 is to redistribute the magnetic field in such a way that an area of zero or very low magnetic field is generated around the Josephson junction chip 2 to be shielded. The high permeability material shields the area where the Josephson junction chip 2 is located by pulling the magnetic field toward itself and away from the Josephson junction chip 2 to be shielded. When the present invention implements electromagnetic shielding through the magnetic shielding unit 11, the material of the magnetic shielding unit 11 is selected so that it has a better shielding effect. Preferably, the magnetic shielding unit 11 of the present invention is made of MuMetal material. MuMetal shields have the ability to absorb magnetic energy and produce very high attenuation by concentrating the magnetic field within the MuMetal shield itself, making these shielding alloys the material of choice for reducing low-frequency electromagnetic interference (EMI). Since the operating environment of the Josephson junction chip 2 has higher requirements, the magnetic shielding effect needs to meet predetermined requirements. Therefore, by manufacturing two concentrically spaced magnetic shielding units 11 with high magnetic permeability metal, a magnetic shielding unit 11 is manufactured for the Josephson junction chip 2 Enclosures in extremely low magnetic field regions. Because the magnetic field source is very strong and close to the Josephson junction chip 2, the multiplication effect of the continuous shield provides significantly greater magnetic field attenuation and prevents saturation of the shield compared to a single magnetic shield of equivalent wall thickness.

对于约瑟夫森结芯片2在不同场景下的电磁屏蔽,可以通过对其设置环境进行分析,从而选择最优尺寸的磁屏蔽单元11,以完成对约瑟夫森结芯片2的电磁屏蔽。具体的,每个磁屏蔽单元11的尺寸是基于环境场的近似值和通量密度的期望水平来计算,该磁屏蔽单元11的尺寸确定具体可以包括:For the electromagnetic shielding of the Josephson junction chip 2 in different scenarios, the optimal size of the magnetic shielding unit 11 can be selected by analyzing the setting environment to complete the electromagnetic shielding of the Josephson junction chip 2 . Specifically, the size of each magnetic shielding unit 11 is calculated based on the approximate value of the environmental field and the expected level of flux density. The size determination of the magnetic shielding unit 11 may specifically include:

,

其中,B是磁屏蔽单元的通量密度,D是磁屏蔽单元的直径,H0是以奥斯特为单位的环境场,d"是磁屏蔽单元的厚度。Where, B is the flux density of the magnetic shielding unit, D is the diameter of the magnetic shielding unit, H 0 is the ambient field in Oersted units, and d" is the thickness of the magnetic shielding unit.

本发明所述非磁性隔离层设于磁屏蔽单元内壁面和/或外壁面,并且每个非磁性隔离层的厚度相同,每个磁屏蔽单元的厚度相同;The non-magnetic isolation layer of the present invention is provided on the inner wall surface and/or the outer wall surface of the magnetic shielding unit, and the thickness of each non-magnetic isolation layer is the same, and the thickness of each magnetic shielding unit is the same;

每个该非磁性隔离层厚度的确定包括:Determination of the thickness of each non-magnetic isolation layer includes:

根据电磁屏蔽装置10周围环境的磁场强度和约瑟夫森结的临界磁场得到电磁屏蔽装置10的目标屏蔽效能;The target shielding effectiveness of the electromagnetic shielding device 10 is obtained according to the magnetic field strength of the environment around the electromagnetic shielding device 10 and the critical magnetic field of the Josephson junction;

根据每个磁屏蔽单元的内径和外径,得到每个磁屏蔽单元上设置的非磁性隔离层的外径或内径;According to the inner diameter and outer diameter of each magnetic shielding unit, the outer diameter or inner diameter of the non-magnetic isolation layer provided on each magnetic shielding unit is obtained;

根据每个磁屏蔽单元的内径、外径和磁导率,以及每个非磁性隔离层的外径、内径、相对磁导率和电导率,得到每个磁屏蔽单元和每个非磁性隔离层的屏蔽效能;According to the inner diameter, outer diameter and magnetic permeability of each magnetic shielding unit, and the outer diameter, inner diameter, relative magnetic permeability and electrical conductivity of each non-magnetic isolation layer, each magnetic shielding unit and each non-magnetic isolation layer are obtained The shielding effectiveness;

根据每个磁屏蔽单元的厚度与内径和外径的对应关系,每个非磁性隔离层的厚度与内径和外径的对应关系,电磁屏蔽装置10的目标屏蔽效能,以及每个磁屏蔽单元和每个非磁性隔离层的屏蔽效能,得到每个非磁性隔离层的厚度;According to the corresponding relationship between the thickness of each magnetic shielding unit and the inner diameter and outer diameter, the corresponding relationship between the thickness of each non-magnetic isolation layer and the inner diameter and outer diameter, the target shielding effectiveness of the electromagnetic shielding device 10, and each magnetic shielding unit and The shielding effectiveness of each non-magnetic isolation layer is obtained by obtaining the thickness of each non-magnetic isolation layer;

其中,每个非磁性隔离层的厚度,满足以下关系:Among them, the thickness of each non-magnetic isolation layer satisfies the following relationship:

,

式中,d'为每个非磁性隔离层的厚度,r'外,i为第i个非磁性隔离层的外径,r'内,i为第i个非磁性隔离层的内径,n为非磁性隔离层的层数,μ0为真空磁导率,μ1为非磁性隔离层的相对磁导率,相对磁导率为非磁性隔离层的磁导率与真空磁导率的比值,ω为磁场角频率,为非磁性隔离层的电导率,y为虚部,d"为每个磁屏蔽单元的厚度,r"外,j为第j个磁屏蔽单元的外径,r"内,j为第j个磁屏蔽单元的内径,m为磁屏蔽单元的数量,m≤n,i=1,2,3,...,n,j=1,2,3,...,m,μ2为磁屏蔽单元的磁导率,a'、b'、a"、b"均为常数,H为电磁屏蔽装置10周围环境的磁场强度,Bc为临界磁场。本发明通过对每个磁屏蔽单元和每个非磁性隔离层的厚度进行限定,可以使其在满足当前应用环境电磁屏蔽的基础上,尽量降低结构设计时对磁屏蔽单元和非磁性隔离层的过量使用,可以降低本发明电磁屏蔽装置10的成本,具有较高的经济效应。In the formula, d' is the thickness of each non-magnetic isolation layer, outside r', i is the outer diameter of the i-th non-magnetic isolation layer, inside r', i is the inner diameter of the i-th non-magnetic isolation layer, and n is The number of layers of the non-magnetic isolation layer, μ 0 is the vacuum permeability, μ 1 is the relative permeability of the non-magnetic isolation layer, and the relative permeability is the ratio of the magnetic permeability of the non-magnetic isolation layer to the vacuum permeability, ω is the angular frequency of the magnetic field, is the conductivity of the non-magnetic isolation layer, y is the imaginary part, d" is the thickness of each magnetic shielding unit, outside r", j is the outer diameter of the jth magnetic shielding unit, inside r", j is the jth magnetic shielding unit The inner diameter of the magnetic shielding unit, m is the number of magnetic shielding units, m≤n, i=1,2,3,...,n, j=1,2,3,...,m, μ 2 is the magnetic The magnetic permeability of the shielding unit, a', b', a", b" are all constants, H is the magnetic field intensity of the environment around the electromagnetic shielding device 10, and B c is the critical magnetic field. The present invention is based on each magnetic shielding unit and The thickness of each non-magnetic isolation layer is limited, so that on the basis of meeting the electromagnetic shielding requirements of the current application environment, the excessive use of magnetic shielding units and non-magnetic isolation layers during structural design can be minimized, which can reduce the electromagnetic shielding device of the present invention. 10 cost, with high economic effect.

本发明实施例中的所述非磁性隔离层通过磁控溅射形成;其中,以直流电源作用时间、高功率脉冲电源作用时间以及离子源作用时间为一个周期,通过多个周期在磁屏蔽单元的内壁面和/或外壁面形成预定厚度的非磁性隔离层。更进一步地,每个周期内直流电源作用时间、高功率脉冲电源作用时间以及离子源作用时间分别为20~40min、200~300min、6~8min。The non-magnetic isolation layer in the embodiment of the present invention is formed by magnetron sputtering; wherein, the action time of the DC power supply, the action time of the high-power pulse power supply and the action time of the ion source are one cycle, and the magnetic shielding unit is formed through multiple cycles. The inner wall surface and/or the outer wall surface form a non-magnetic isolation layer with a predetermined thickness. Furthermore, the action time of DC power supply, high-power pulse power supply and ion source in each cycle are 20~40min, 200~300min, and 6~8min respectively.

参见图2所示,本发明还提供一种约瑟夫森电压系统,所述系统包括:As shown in Figure 2, the present invention also provides a Josephson voltage system, which includes:

上述保持约瑟夫森结超导状态的电磁屏蔽装置10;The above-mentioned electromagnetic shielding device 10 that maintains the superconducting state of the Josephson junction;

约瑟夫森结芯片2,其位于所述电磁屏蔽装置10内部,并具有约瑟夫森结。The Josephson junction chip 2 is located inside the electromagnetic shielding device 10 and has a Josephson junction.

通过将约瑟夫森结芯片2设置于电磁屏蔽装置10内部,可以通过电磁屏蔽装置10实现对约瑟夫森结芯片2的电磁屏蔽。并且通过上述对电磁屏蔽装置10的材料、尺寸、结构进行设置,提高对约瑟夫森结芯片2的电磁屏蔽效果。By disposing the Josephson junction chip 2 inside the electromagnetic shielding device 10 , the electromagnetic shielding of the Josephson junction chip 2 can be achieved by the electromagnetic shielding device 10 . Moreover, by setting the material, size, and structure of the electromagnetic shielding device 10 as described above, the electromagnetic shielding effect on the Josephson junction chip 2 is improved.

本发明的约瑟夫森电压系统为了提高对约瑟夫森结芯片2的屏蔽效果,可以将约瑟夫森结芯片2设置于两个同心间隔的磁屏蔽单元11的几何中心。可以使得约瑟夫森结芯片2周围的磁场均匀对称,且使得约瑟夫森结芯片2所受的磁场影响最小。In order to improve the shielding effect on the Josephson junction chip 2 of the Josephson voltage system of the present invention, the Josephson junction chip 2 can be arranged at the geometric center of two concentrically spaced magnetic shielding units 11 . The magnetic field around the Josephson junction chip 2 can be made uniform and symmetrical, and the influence of the magnetic field on the Josephson junction chip 2 can be minimized.

磁屏蔽单元11在阻止任何类型的低频磁噪声进入磁屏蔽外壳方面非常有效。低磁场外壳是由分隔和隔离内部体积的磁屏蔽的物理边界产生的,但是应该确保在腔室内没有磁场源。在运行中的约瑟夫森结阵系统中,约瑟夫森结芯片2附近有潜在的磁场源(位于磁屏蔽单元外)。另外,为了监控约瑟夫森结芯片2的工作条件,还可以在电磁屏蔽装置10内设置有温度传感器4和磁场传感器3,并且温度传感器4和磁场传感器3靠近所述约瑟夫森结芯片2设置。通过监测的温度和磁场大小,可以完成对电磁屏蔽装置10的屏蔽效果判断,从而保证其内约瑟夫森结芯片2的工作装置。进一步的,约瑟夫森电压系统还包调节磁屏蔽单元周围环境温度的控制器6,以及设于内径最大的磁屏蔽单元上的连接器5,连接器5将温度传感器4、磁场传感器3分别与控制器6可断开的连接。其中,连接器5在不同温度下会具有不同的连接效果,具体的,在温度传感器4检测的温度结果不大于约瑟夫森结芯片2的临界温度时,连接器5与控制器6连通,控制器6根据温度传感器4检测的温度结果调节磁屏蔽单元周围环境的温度,在温度传感器4检测的温度结果大于约瑟夫森结芯片2的临界温度时,连接器5与控制器6断开。The magnetic shielding unit 11 is very effective in preventing any type of low frequency magnetic noise from entering the magnetically shielded enclosure. A low magnetic field enclosure is created by a physical boundary of magnetic shielding that separates and isolates the internal volume, but it should be ensured that there are no sources of magnetic fields within the chamber. In an operating Josephson junction system, there is a potential magnetic field source near Josephson junction chip 2 (located outside the magnetic shielding unit). In addition, in order to monitor the working conditions of the Josephson junction chip 2 , a temperature sensor 4 and a magnetic field sensor 3 can also be provided in the electromagnetic shielding device 10 , and the temperature sensor 4 and the magnetic field sensor 3 are arranged close to the Josephson junction chip 2 . By monitoring the temperature and magnetic field size, the shielding effect of the electromagnetic shielding device 10 can be judged, thereby ensuring the working device of the Josephson junction chip 2 inside it. Furthermore, the Josephson voltage system also includes a controller 6 that adjusts the ambient temperature around the magnetic shielding unit, and a connector 5 located on the magnetic shielding unit with the largest inner diameter. The connector 5 connects the temperature sensor 4 and the magnetic field sensor 3 to the control unit respectively. 6 disconnectable connections. Among them, the connector 5 will have different connection effects at different temperatures. Specifically, when the temperature result detected by the temperature sensor 4 is not greater than the critical temperature of the Josephson junction chip 2, the connector 5 is connected to the controller 6, and the controller 6. Adjust the temperature of the environment around the magnetic shielding unit according to the temperature result detected by the temperature sensor 4. When the temperature result detected by the temperature sensor 4 is greater than the critical temperature of the Josephson junction chip 2, the connector 5 is disconnected from the controller 6.

其中,制器根据温度传感器4检测的温度结果调节磁屏蔽单元周围环境的温度,还包括:Among them, the controller adjusts the temperature of the environment around the magnetic shielding unit according to the temperature result detected by the temperature sensor 4, and also includes:

获取温度传感器4检测的当前温度结果,以及预定时间段内的温度结果;Obtain the current temperature result detected by the temperature sensor 4 and the temperature result within a predetermined time period;

根据温度传感器4检测的温度结果,得到温度变化率;According to the temperature result detected by the temperature sensor 4, the temperature change rate is obtained;

根据温度变化率得到磁屏蔽单元内的温度变化状态;According to the temperature change rate, the temperature change state in the magnetic shielding unit is obtained;

根据温度变化状态、当前温度结果和温度阈值,调节磁屏蔽单元周围环境温度至预设值。According to the temperature change status, current temperature result and temperature threshold, adjust the ambient temperature around the magnetic shielding unit to the preset value.

温度变化状态包括升温、恒温和降温状态;Temperature change states include heating, constant temperature and cooling states;

根据温度变化状态、当前温度结果和温度阈值,调节磁屏蔽单元周围环境温度至预设值,包括:According to the temperature change status, current temperature results and temperature threshold, adjust the ambient temperature around the magnetic shielding unit to the preset value, including:

当温度变化状态为升温状态,且当前温度结果小于温度阈值时,以及当温度变化状态为降温状态,且当前温度结果大于温度阈值时,调节磁屏蔽单元周围环境温度不变;When the temperature change state is a heating state and the current temperature result is less than the temperature threshold, and when the temperature change state is a cooling state and the current temperature result is greater than the temperature threshold, adjust the ambient temperature around the magnetic shielding unit to remain unchanged;

当温度变化状态为升温状态,且当前温度结果不小于温度阈值时,以及当温度变化状态为恒温状态,且当前温度结果大于温度阈值时,降低磁屏蔽单元周围环境温度;When the temperature change state is a heating state and the current temperature result is not less than the temperature threshold, and when the temperature change state is a constant temperature state and the current temperature result is greater than the temperature threshold, reduce the ambient temperature around the magnetic shielding unit;

当温度变化状态为恒温或降温状态,且当前温度结果不大于温度阈值时,调节磁屏蔽单元周围环境温度至预定温度;优选地,预定温度为4K。When the temperature change state is a constant temperature or cooling state, and the current temperature result is not greater than the temperature threshold, adjust the ambient temperature around the magnetic shielding unit to a predetermined temperature; preferably, the predetermined temperature is 4K.

本公开实施例提供了一种保持约瑟夫森结超导状态的电磁屏蔽装置10,所述系统包含处理器、存储器,所述处理器通过执行存储器中的计算机指令实现上述实施例的功能。The embodiment of the present disclosure provides an electromagnetic shielding device 10 that maintains the superconducting state of the Josephson junction. The system includes a processor and a memory. The processor implements the functions of the above embodiment by executing computer instructions in the memory.

需要说明的是,本公开上述的计算机可读介质可以是计算机可读信号介质或者计算机可读存储介质或者是上述两者的任意组合。计算机可读存储介质例如可以是但不限于电、磁、光、电磁、红外线、或半导体的系统、装置或器件,或者任意以上的组合。计算机可读存储介质的更具体的例子可以包括但不限于:具有一个或多个导线的电连接、便携式计算机磁盘、硬盘、随机访问存储器(RAM)、只读存储器(ROM)、可擦式可编程只读存储器(EPROM或闪存)、光纤、便携式紧凑磁盘只读存储器(CD-ROM)、光存储器件、磁存储器件、或者上述的任意合适的组合。在本公开中,计算机可读存储介质可以是任何包含或存储程序的有形介质,该程序可以被指令执行系统、装置或者器件使用或者与其结合使用。而在本公开中,计算机可读信号介质可以包括在基带中或者作为载波一部分传播的数据信号,其中承载了计算机可读的程序代码。这种传播的数据信号可以采用多种形式,包括但不限于电磁信号、光信号或上述的任意合适的组合。计算机可读信号介质还可以是计算机可读存储介质以外的任何计算机可读介质,该计算机可读信号介质可以发送、传播或者传输用于由指令执行系统、装置或者器件使用或者与其结合使用的程序。计算机可读介质上包含的程序代码可以用任何适当的介质传输,包括但不限于:电线、光缆、RF(射频)等等,或者上述的任意合适的组合。It should be noted that the computer-readable medium mentioned above in the present disclosure may be a computer-readable signal medium or a computer-readable storage medium, or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination thereof. More specific examples of computer readable storage media may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard drive, random access memory (RAM), read only memory (ROM), removable Programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination of the above. In this disclosure, a computer-readable storage medium may be any tangible medium that contains or stores a program for use by or in connection with an instruction execution system, apparatus, or device. In the present disclosure, a computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, carrying computer-readable program code therein. Such propagated data signals may take many forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device . Program code embodied on a computer-readable medium may be transmitted using any suitable medium, including but not limited to: wire, optical fiber cable, RF (radio frequency), etc., or any suitable combination of the foregoing.

上述计算机可读介质可以是上述电子设备中所包含的;也可以是单独存在,而未装配入该电子设备中。可以以一种或多种程序设计语言或其组合来编写用于执行本公开的操作的计算机程序代码,上述程序设计语言包括面向对象的程序设计语言,诸如Java、Smalltalk、C++,还包括常规的过程式程序设计语言,诸如“C”语言或类似的程序设计语言。程序代码可以完全地在用户计算机上执行、部分地在用户计算机上执行、作为一个独立的软件包执行、部分在用户计算机上部分在远程计算机上执行、或者完全在远程计算机或服务器上执行;在涉及远程计算机的情形中,远程计算机可以通过任意种类的网络,包括局域网(AN)或广域网(WAN),连接到用户计算机,或者,可以连接到外部计算机(例如利用因特网服务提供商来通过因特网连接)。The above-mentioned computer-readable medium may be included in the above-mentioned electronic device; it may also exist independently without being assembled into the electronic device. Computer program code for performing the operations of the present disclosure may be written in one or more programming languages, including object-oriented programming languages such as Java, Smalltalk, C++, and conventional A procedural programming language, such as the "C" language or similar programming language. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server; In situations involving remote computers, the remote computer can be connected to the user's computer through any kind of network, including a local area network (AN) or a wide area network (WAN), or it can be connected to an external computer (such as an Internet service provider through the Internet). ).

附图中的流程图和框图,图示了按照本公开各种实施例的系统、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上,流程图或框图中的每个方框可以代表一个模块、程序段、或代码的一部分,该模块、程序段、或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意,在有些作为替换的实现中,方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如,两个接连地表示的方框实际上可以基本并行地执行,它们有时也可以按相反的顺序执行,这依所涉及的功能而定。也要注意的是,框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合,可以用执行规定的功能或操作的专用的基于硬件的系统来实现,或者可以用专用硬件与计算机指令的组合来实现。The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operations of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in the flowchart or block diagram may represent a module, segment, or portion of code that contains one or more logic functions that implement the specified executable instructions. It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown one after another may actually execute substantially in parallel, or they may sometimes execute in the reverse order, depending on the functionality involved. It will also be noted that each block of the block diagram and/or flowchart illustration, and combinations of blocks in the block diagram and/or flowchart illustration, can be implemented by special purpose hardware-based systems that perform the specified functions or operations. , or can be implemented using a combination of specialized hardware and computer instructions.

描述于本公开实施例中所涉及到的单元可以通过软件的方式实现,也可以通过硬件的方式来实现。其中,单元的名称在某种情况下并不构成对该单元本身的限定。The units involved in the embodiments of the present disclosure can be implemented in software or hardware. Among them, the name of a unit does not constitute a limitation on the unit itself under certain circumstances.

以上介绍了本发明的较佳实施方式,旨在使得本发明的精神更加清楚和便于理解,并不是为了限制本发明,凡在本发明的精神和原则之内,所做的修改、替换、改进,均应包含在本发明所附的权利要求概括的保护范围之内。The above describes the preferred embodiments of the present invention, which are intended to make the spirit of the present invention clearer and easier to understand. They are not intended to limit the present invention. All modifications, substitutions, and improvements can be made within the spirit and principles of the present invention. , should be included in the scope of protection summarized by the appended claims of the present invention.

Claims (9)

1.一种保持约瑟夫森结超导状态的电磁屏蔽装置,其特征在于,所述装置包括至少两个同心间隔套设的磁屏蔽单元,其中,1. An electromagnetic shielding device that maintains the superconducting state of the Josephson junction, characterized in that the device includes at least two concentrically spaced magnetic shielding units, wherein, 每个磁屏蔽单元均包括一端封闭的圆柱体和与所述圆柱体另一端紧密配合的可拆卸盖体;所述圆柱体的内壁面和/或外壁面上设有非磁性隔离层,且在相邻磁屏蔽单元之间至少具有一个非磁性隔离层;Each magnetic shielding unit includes a cylinder with one end closed and a detachable cover that closely fits the other end of the cylinder; a non-magnetic isolation layer is provided on the inner and/or outer wall of the cylinder, and There is at least one non-magnetic isolation layer between adjacent magnetic shielding units; 根据约瑟夫森结周围环境的磁场强度和电磁屏蔽装置的目标屏蔽效能,确定磁屏蔽单元的尺寸和非磁性隔离层的厚度,且将每个磁屏蔽单元内设为真空,以保持约瑟夫森结超导状态;内径最小的磁屏蔽单元的内腔直径为15~20cm;每个磁屏蔽单元的厚度相同,每个磁屏蔽单元的外径确定,包括:According to the magnetic field strength of the environment around the Josephson junction and the target shielding effectiveness of the electromagnetic shielding device, determine the size of the magnetic shielding unit and the thickness of the non-magnetic isolation layer, and set a vacuum inside each magnetic shielding unit to keep the Josephson junction super conductive state; the inner cavity diameter of the magnetic shielding unit with the smallest inner diameter is 15~20cm; the thickness of each magnetic shielding unit is the same, and the outer diameter of each magnetic shielding unit is determined, including: ; 其中,B是磁屏蔽单元的磁通量密度,D是磁屏蔽单元的外径,H0是以奥斯特为单位的磁屏蔽单元周围环境的磁场强度,d"是磁屏蔽单元的厚度,α为磁通量密度系数;Among them, B is the magnetic flux density of the magnetic shielding unit, D is the outer diameter of the magnetic shielding unit, H 0 is the magnetic field intensity of the environment around the magnetic shielding unit in Oersted units, d" is the thickness of the magnetic shielding unit, α is Magnetic flux density coefficient; 每个非磁性隔离层的厚度相同,非磁性隔离层厚度的确定包括:The thickness of each non-magnetic isolation layer is the same. The determination of the thickness of the non-magnetic isolation layer includes: 根据电磁屏蔽装置周围环境的磁场强度和约瑟夫森结的临界磁场得到电磁屏蔽装置的目标屏蔽效能;根据每个磁屏蔽单元的内径和外径,得到每个磁屏蔽单元上设置的非磁性隔离层的外径或内径;根据每个磁屏蔽单元的厚度与内径和外径的对应关系,每个非磁性隔离层的厚度与内径和外径的对应关系,每个磁屏蔽单元的内径、外径和磁导率,每个非磁性隔离层的外径、内径、相对磁导率和电导率,以及电磁屏蔽装置的目标屏蔽效能,得到每个非磁性隔离层的厚度。The target shielding effectiveness of the electromagnetic shielding device is obtained according to the magnetic field strength of the environment around the electromagnetic shielding device and the critical magnetic field of the Josephson junction; the non-magnetic isolation layer provided on each magnetic shielding unit is obtained according to the inner diameter and outer diameter of each magnetic shielding unit. The outer diameter or inner diameter; according to the corresponding relationship between the thickness of each magnetic shielding unit and the inner diameter and outer diameter, the corresponding relationship between the thickness of each non-magnetic isolation layer and the inner diameter and outer diameter, the inner diameter and outer diameter of each magnetic shielding unit and magnetic permeability, the outer diameter, inner diameter, relative magnetic permeability and electrical conductivity of each non-magnetic isolation layer, and the target shielding effectiveness of the electromagnetic shielding device to obtain the thickness of each non-magnetic isolation layer. 2.如权利要求1所述的保持约瑟夫森结超导状态的电磁屏蔽装置,其特征在于,所述磁屏蔽单元采用高导磁合金制成,非磁性隔离层包括无氧铜。2. The electromagnetic shielding device for maintaining the superconducting state of the Josephson junction as claimed in claim 1, wherein the magnetic shielding unit is made of a highly permeable alloy, and the non-magnetic isolation layer includes oxygen-free copper. 3.如权利要求1所述的保持约瑟夫森结超导状态的电磁屏蔽装置,其特征在于,每个非磁性隔离层的厚度,满足以下关系:3. The electromagnetic shielding device for maintaining the superconducting state of the Josephson junction as claimed in claim 1, wherein the thickness of each non-magnetic isolation layer satisfies the following relationship: ; 式中,d'为每个非磁性隔离层的厚度,r'外,i为第i个非磁性隔离层的外径,r'内,i为第i个非磁性隔离层的内径,n为非磁性隔离层的层数,μ0为真空磁导率,μ1为非磁性隔离层的相对磁导率,ω为磁场角频率,为非磁性隔离层的电导率,y为虚部,d"为每个磁屏蔽单元的厚度,r"外,j为第j个磁屏蔽单元的外径,r"内,j为第j个磁屏蔽单元的内径,m为磁屏蔽单元的数量,μ2为磁屏蔽单元的磁导率,a'、b'、a"、b"均为常数,H为电磁屏蔽装置周围环境的磁场强度,Bc为临界磁场。In the formula, d' is the thickness of each non-magnetic isolation layer, outside r', i is the outer diameter of the i-th non-magnetic isolation layer, inside r', i is the inner diameter of the i-th non-magnetic isolation layer, and n is The number of layers of non-magnetic isolation layer, μ 0 is the vacuum magnetic permeability, μ 1 is the relative magnetic permeability of the non-magnetic isolation layer, ω is the angular frequency of the magnetic field, is the conductivity of the non-magnetic isolation layer, y is the imaginary part, d" is the thickness of each magnetic shielding unit, outside r", j is the outer diameter of the jth magnetic shielding unit, inside r", j is the jth magnetic shielding unit The inner diameter of the magnetic shielding unit, m is the number of magnetic shielding units, μ 2 is the magnetic permeability of the magnetic shielding unit, a', b', a", b" are all constants, H is the magnetic field strength of the environment around the electromagnetic shielding device , B c is the critical magnetic field. 4.如权利要求1所述的保持约瑟夫森结超导状态的电磁屏蔽装置,其特征在于,所述非磁性隔离层通过磁控溅射形成;4. The electromagnetic shielding device for maintaining the superconducting state of the Josephson junction according to claim 1, wherein the non-magnetic isolation layer is formed by magnetron sputtering; 其中,以直流电源作用时间、高功率脉冲电源作用时间以及离子源作用时间为一个周期,通过多个周期在磁屏蔽单元的内壁面和/或外壁面形成预定厚度的非磁性隔离层。Among them, the action time of the DC power supply, the action time of the high-power pulse power supply and the action time of the ion source are regarded as one cycle, and a non-magnetic isolation layer with a predetermined thickness is formed on the inner wall surface and/or the outer wall surface of the magnetic shielding unit through multiple cycles. 5.如权利要求4所述的保持约瑟夫森结超导状态的电磁屏蔽装置,其特征在于,每个周期内直流电源作用时间、高功率脉冲电源作用时间以及离子源作用时间分别为20~40min、200~300min、6~8min。5. The electromagnetic shielding device for maintaining the Josephson junction superconducting state as claimed in claim 4, characterized in that the DC power supply action time, the high-power pulse power supply action time and the ion source action time in each cycle are 20 to 40 minutes respectively. ,200~300min, 6~8min. 6.一种约瑟夫森电压系统,其特征在于,所述系统包括:6. A Josephson voltage system, characterized in that the system includes: 如权利要求1-5任意一项所述保持约瑟夫森结超导状态的电磁屏蔽装置;The electromagnetic shielding device maintaining the superconducting state of the Josephson junction according to any one of claims 1 to 5; 约瑟夫森结芯片,其位于所述电磁屏蔽装置内部,并具有约瑟夫森结,所述约瑟夫森结芯片位于至少两个同心间隔的磁屏蔽单元的几何中心。A Josephson junction chip is located inside the electromagnetic shielding device and has a Josephson junction. The Josephson junction chip is located at the geometric center of at least two concentrically spaced magnetic shielding units. 7.如权利要求6所述的约瑟夫森电压系统,其特征在于,电磁屏蔽装置内设置有温度传感器和磁场传感器,并且温度传感器和磁场传感器靠近所述约瑟夫森结芯片设置。7. The Josephson voltage system according to claim 6, wherein a temperature sensor and a magnetic field sensor are provided in the electromagnetic shielding device, and the temperature sensor and the magnetic field sensor are provided close to the Josephson junction chip. 8.如权利要求7所述的约瑟夫森电压系统,其特征在于,约瑟夫森电压系统还包括调节磁屏蔽单元周围环境温度的控制器,以及设于内径最大的磁屏蔽单元上的连接器,连接器将温度传感器、磁场传感器分别与控制器可断开的连接。8. The Josephson voltage system as claimed in claim 7, characterized in that the Josephson voltage system further includes a controller that adjusts the ambient temperature around the magnetic shielding unit, and a connector located on the magnetic shielding unit with the largest inner diameter. The device connects the temperature sensor and magnetic field sensor to the controller in a detachable manner. 9.如权利要求8所述的约瑟夫森电压系统,其特征在于,在温度传感器检测的温度结果不大于约瑟夫森结芯片的临界温度时,连接器与控制器连通,控制器根据温度传感器检测的温度结果调节磁屏蔽单元周围环境的温度,在温度传感器检测的温度结果大于约瑟夫森结芯片的临界温度时,连接器与控制器断开。9. The Josephson voltage system according to claim 8, wherein when the temperature result detected by the temperature sensor is not greater than the critical temperature of the Josephson junction chip, the connector is connected to the controller, and the controller detects the temperature according to the temperature detected by the temperature sensor. The temperature result adjusts the temperature of the environment around the magnetic shielding unit. When the temperature result detected by the temperature sensor is greater than the critical temperature of the Josephson junction chip, the connector is disconnected from the controller.
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