CN117013249B - Low elevation angle double-frequency dual-beam patch antenna - Google Patents
Low elevation angle double-frequency dual-beam patch antenna Download PDFInfo
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- CN117013249B CN117013249B CN202311141057.9A CN202311141057A CN117013249B CN 117013249 B CN117013249 B CN 117013249B CN 202311141057 A CN202311141057 A CN 202311141057A CN 117013249 B CN117013249 B CN 117013249B
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- 239000002184 metal Substances 0.000 claims description 74
- 230000009977 dual effect Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000005855 radiation Effects 0.000 abstract description 30
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005388 cross polarization Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
- H01P7/105—Multimode resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a low elevation double-frequency dual-beam patch antenna, which is characterized in that an open-circuit patch resonator is arranged between two I-shaped via loading patch resonators and two via wall loading patch resonators, wherein the former is operated in TM 20 Mode and TM 02 The latter two operate in even symmetry TM 11 Mode and even symmetry TM 01 And the modes are utilized to obtain electric field phase distribution required by supporting low-frequency x-direction low-elevation dual-beam radiation and high-frequency y-direction low-elevation dual-beam radiation by utilizing the field distribution characteristics of the modes and electric coupling between the modes, so that the low-elevation dual-frequency dual-beam patch antenna is realized, and the section is lower.
Description
Technical Field
The present invention relates to microwave communication devices, and more particularly to a patch antenna.
Background
The double-beam patch antenna utilizes a single patch antenna to realize two beams, respectively covers two lateral spaces, avoids using a plurality of single-beam patch antennas to cover the two lateral spaces, can reduce the number of antennas and corresponding interference, is suitable for long and narrow communication scenes such as coal mines, tunnels, subways and the like, and can reduce multipath effect and improve the quality of a communication link. On the basis, the two beams of the dual-beam patch antenna are pulled towards the end-fire direction, namely, the elevation angle of the beams is reduced to realize the low-elevation angle dual-beam patch antenna; the low-elevation dual-beam patch antenna can realize low-elevation dual-beam radiation under the condition of keeping the complete metal ground, and effectively avoids the great influence of the carrier platform metal ground on the radiation characteristics of the antenna. In addition, the low-elevation dual-frequency dual-beam patch antenna can realize low-elevation dual-beam radiation on two working frequency bands, can improve the adaptability of the low-elevation dual-beam antenna to frequency band and multi-system work, can reduce the number of antennas relative to two single-frequency band antennas, reduces the space occupation rate of the antennas in the system, and is beneficial to miniaturization and integration of a radio frequency communication system. Therefore, the low-elevation dual-frequency dual-beam patch antenna has important application value.
The existing dual-beam patch antennas are all single-frequency dual-beam patch antennas, and the design methods of the existing dual-beam patch antennas are two types: the first is to use slot-loaded rectangular patches to achieve dual beam radiation, slot mode and TM of the antenna 20 The mode works together to widen the corresponding bandwidth of the double wave beams, but the radiation elevation angle of the antenna can only reach +/-45 degrees, and the section is higher. The second type is to operate on TM 01 The double-sided short-circuit patch of the mode combines the middle layer and the parasitic patches on two sides to realize dual-beam radiation, and the radiation elevation angle of the antenna is still larger due to the driving mode and the mode of the parasitic patches. Dual-band dual-beam patch antennas for dual-band operation are currently not reported. Therefore, there is a need for a low elevation dual frequency dual beam patch antenna.
Disclosure of Invention
The invention aims to: aiming at the prior art, a low-elevation dual-frequency dual-beam patch antenna is provided, the dual-frequency and low-elevation dual-beam radiation problems are solved, and the section height of the antenna can be considered.
The technical scheme is as follows: a low elevation dual-frequency dual-beam patch antenna comprises two I-shaped via loading patch resonators, two via wall loading patch resonators and an open-circuit patch resonator; the two I-shaped via loading patch resonators are symmetrically distributed on two sides of the open-circuit type patch resonator, and the two via wall loading patch resonators are symmetrically distributed on the other two sides of the open-circuit type patch resonator; a signal is fed to the open-circuit patch resonator through a feed structure, further coupled to the "on both sides"I-shaped via hole loading patch resonator and via hole wall loading patch resonators on the other two sides, wherein the middle open-circuit patch resonator works in TM 20 Mode and TM 02 The mould is used for working in a low frequency band and a high frequency band respectively; the I-shaped via loading patch resonator works in even symmetry TM 11 A die for low frequency operation; the via wall loading patch resonator works in even symmetry TM 01 A die for high frequency operation.
Further, the patch antenna comprises a top metal structure, a dielectric substrate and a bottom metal ground which are sequentially laminated; the top-layer metal structure comprises a first rectangular metal patch of the open-circuit patch resonator, a second rectangular metal patch of the I-shaped via loading patch resonator and a third rectangular metal patch of the via wall loading patch resonator; the length of the first rectangular metal patch in the x direction is 0.45lambda 1 ～0.5λ 1 Between lambda 1 The length of the y direction is 0.35 lambda for the free space wavelength corresponding to the center frequency of the low frequency band 2 ～0.4λ 2 Between lambda 2 Is the free space wavelength corresponding to the center frequency of the high-frequency band.
Further, two second rectangular metal patches are located at the left and right sides of the first rectangular metal patch along the x direction, and the length of the second rectangular metal patch in the x direction is 0.15λ 1 ～0.2λ 1 Between them, the length in y direction is 0.2λ 1 ～0.25λ 1 The margin between the first rectangular metal patch and the first rectangular metal patch is 0.035lambda 1 ～0.04λ 1 Between them; the second rectangular metal patch is provided with I-shaped via holes, the middle parts of the I-shaped via holes are y-direction via holes, and the upper and lower parts of the I-shaped via holes are x-direction via holes.
Further, two third rectangular metal patches are positioned on the upper side and the lower side of the rectangular metal patches along the y direction, and the length of the third rectangular metal patches in the x direction is 0.3λ 2 ～0.35λ 2 Between them, the length in y direction is 0.15 lambda 2 ～0.2λ 2 Between and the first rectangular metal patchEdge distance is 0.025 lambda 2 ～0.03λ 2 Between them; and the middle of the third rectangular metal patch is provided with a hole wall along the x direction.
Further, the ratio of the length in the y direction to the length in the x direction of the third rectangular metal patch is less than 0.5.
The beneficial effects are that: the existing dual-beam patch antenna cannot realize dual-frequency operation and low-elevation radiation, and part of the design also has the problem of high profile. The invention arranges an open-circuit type patch resonator between two I-shaped via hole loading patch resonators and two via hole wall loading patch resonators, the former works in TM 20 Mode and TM 02 The latter two operate in even symmetry TM 11 Mode and even symmetry TM 01 And the modes are utilized to obtain electric field phase distribution required by supporting low-frequency x-direction low-elevation dual-beam radiation and high-frequency y-direction low-elevation dual-beam radiation by utilizing the field distribution characteristics of the modes and electric coupling between the modes, so that the low-elevation dual-frequency dual-beam patch antenna is realized, and the section is lower.
Specifically, two I-shaped via loading patch resonators are positioned at the left side and the right side of the open-circuit patch resonator, and consist of rectangular metal patches and I-shaped distributed vias; the middle part of the H-shaped via hole is a y-direction via hole wall for forming even symmetry TM with resonance at low frequency 11 The mode field distribution; the upper and lower parts of the H-shaped via hole are x-direction via hole walls, and are used for inhibiting radiation of the edges of the upper and lower sides of the rectangular metal patch in the y direction during low-frequency operation, so that the stability of the x-direction low-elevation dual-beam radiation is ensured.
The two via hole wall loading patch resonators are positioned at the upper side and the lower side of the open-circuit patch resonator and consist of rectangular metal patches and via hole walls arranged along the x direction in the middle; intermediate via walls arranged in x-direction for forming even symmetry TM resonating at high frequency 01 The mode field distribution; the ratio of the length of the rectangular metal patch in the y direction to the length of the rectangular metal patch in the x direction is required to be smaller than 0.5, so that the rectangular metal patch can be used for inhibiting radiation generated by the left and right side edges of the rectangular metal patch in the x direction during high-frequency operation, and low-elevation angle dual-beam radiation in the y direction is ensured.
Drawings
FIG. 1 is a schematic diagram of a cross-sectional structure of a low elevation dual-frequency dual-beam patch antenna;
FIG. 2 is a schematic top view of a low elevation dual frequency dual beam patch antenna;
FIG. 3 is a simulated impedance matching curve of an antenna;
fig. 4 is a xoz side normalized simulation pattern for an antenna at 3.4 GHz;
fig. 5 is a yoz face normalized simulation pattern for an antenna at 5 GHz;
fig. 6 is a graph showing the elevation angle of a beam as a function of frequency for an antenna with or without parasitic patches.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1 and 2, the low-elevation dual-frequency dual-beam patch antenna has a centrally symmetrical distribution in a plane, and is composed of a top metal structure 1, a dielectric substrate 2, a bottom metal ground 3, a metallized via 4, an air through hole 5 and a coaxial probe 6.
The top metal structure 1 is composed of a rectangular metal patch 11 with a circular groove 12 loaded at the center, a metal circular ring 13, two rectangular metal patches 14 loaded by H-shaped metallized via holes 41 and two rectangular metal patches 15 with metallized via hole walls 42 loaded in the middle. The length of the rectangular metal patch 11 in the x direction is 0.45λ 1 ～0.5λ 1 Between lambda 1 The length of the y direction is 0.35 lambda for the free space wavelength corresponding to the center frequency of the low frequency band 2 ～0.4λ 2 Between lambda 2 Is the free space wavelength corresponding to the center frequency of the high-frequency band. Two rectangular metal patches 14 are respectively arranged on the left and right sides of the rectangular metal patch 11, and the length in the x direction is 0.15λ 1 ～0.2λ 1 Between them, the length in y direction is 0.2λ 1 ～0.25λ 1 The margin between the rectangular metal patch 11 and the metal patch is 0.035 lambda 1 ～0.04λ 1 Between them. Two rectangular metal patches 15 are respectively arranged on the upper and lower sides of the rectangular metal patch 11, and the length in the x direction is 0.3λ 2 ～0.35λ 2 Between them, the length in y direction is 0.15 lambda 2 ～0.2λ 2 The margin between the rectangular metal patch 11 and the metal patch is 0.025 lambda 2 ～0.03λ 2 Between them. The rectangular metal patch 11, the circular groove 12, the dielectric substrate 2 and the underlying metal ground 3 constitute an open-circuit patch resonator. The rectangular metal patch 14, the dielectric substrate 2, the bottom metal ground 3 and the I-shaped metallized via 41 form an I-shaped via loading patch resonator. The rectangular metal patch 15, the dielectric substrate 2, the underlying metal ground 3 and the metallized via wall 42 constitute a via wall loaded patch resonator. The center of the dielectric substrate 2 is provided with an air through hole 5, and an inner conductor 61 for the coaxial probe 6 is connected with the metal ring 13 to be used as a feed structure of the low-elevation dual-frequency dual-beam patch antenna.
For the proposed low-elevation dual-frequency dual-beam patch antenna, signals are fed into an open-circuit patch resonator through a feed structure, and are further coupled to H-shaped via loading patch resonators on the left side and the right side and via wall loading patch resonators on the upper side and the lower side, so that low-elevation dual-frequency dual-beam radiation is realized under the combined action of all resonators.
In this process, the intermediate open-circuit patch resonator operates at TM 20 Mode and TM 02 The mould is used for working in a low frequency band and a high frequency band respectively; the I-shaped via loading patch resonator works in even symmetry TM 11 A die for low frequency operation; the via wall loading patch resonator works in even symmetry TM 01 A die for high frequency operation. Therefore, the antenna is mainly dependent on TM in low-frequency operation 20 Mode middle open-circuit type patch resonator and left and right sides work in even symmetry TM 11 The mode 'I' -shaped via loading patch resonator is mainly dependent on TM during high-frequency operation of the antenna 02 Mode middle open-circuit type patch resonator and upper and lower sides work in even symmetry TM 01 The via walls of the mode load the patch resonator.
In low frequency operation, the device works in TM 20 The internal electric field of the mode middle open-circuit type patch resonator is full-wave distributed in the x direction, and a pair of equal-amplitude reverse x-direction electric field components exist at the left side and the right side; operating in even symmetry TM 11 Mode 'I' -shaped via loading patch resonatorThe directions of the internal z-direction electric fields are the same, the internal z-direction electric fields are distributed in a half-wave mode in the x-direction, and the left side and the right side of the internal z-direction electric fields are in equal-amplitude reverse distribution; electric coupling is generated between the two resonators, and the directions of the x-direction electric field components at adjacent positions of the resonators are similar. At this time, the distance between the x-direction electric field on the left and right sides of the left I-shaped via loading patch resonator and the left x-direction electric field on the left side of the open-circuit patch resonator from left to right is less than 0.25λ 1 The phase difference is between-180 degrees and 0 degrees, so that the phase difference distribution requirement of low elevation angle radiation of the left beam is met; the right side field distribution and the left side field distribution are bilaterally symmetrical, and the phase difference distribution requirement of the right side wave beam low elevation radiation requirement is met. In addition, the "i" shaped metallized via 41 attached to the rectangular metal patch 14 can suppress radiation from occurring at the upper and lower edges of the patch in the y-direction, and maintain the x-direction dual beam radiation of the antenna at low frequency operation.
In the high frequency band, operate in TM 02 The internal electric field of the mode is full-wave distributed in the y direction, and a pair of equal-amplitude reverse y-direction electric field components are arranged on the upper side and the lower side of the mode; operating in even symmetry TM 01 The wall of the through hole of the mode is loaded with a patch resonator, the electric fields in the internal z direction are the same in direction, the electric fields are distributed in a half wave mode in the y direction, and the electric fields in the y direction are distributed in the same-amplitude reverse direction on the upper side and the lower side; the two resonators are electrically coupled, and the directions of the electric field components in the y direction at the adjacent positions of the resonators are similar. At this time, the distance between the y-direction electric field on the upper and lower sides of the upper via-hole wall loaded patch resonator and the y-direction electric field on the upper side of the open-circuit patch resonator from top to bottom is less than 0.25λ 2 The phase difference is between-180 degrees and 0 degrees, so that the phase difference distribution requirement of the upper side wave beam low elevation radiation requirement is met; the lower field distribution and the upper field distribution are vertically symmetrical, and the phase difference distribution requirement of the lower beam low-elevation radiation requirement is met. The ratio of the length of the rectangular metal patch 15 in the y direction to the length of the rectangular metal patch in the x direction is below 0.5, so as to inhibit the left and right edges of the rectangular metal patch 15 from generating radiation in the x direction of the frequency band, and keep the antenna from radiating with dual beams in the y direction during high-frequency operation.
The medium adopted in the embodimentThe substrate is RO4003C substrate, and the radiator size is 1.41 lambda 1 ×0.59λ 1 ×0.037λ 1 . The simulated matching response is shown in fig. 3, and it can be seen from fig. 3 that this embodiment is a dual-band antenna, the low-band center frequency is 3.4GHz, and the high-band center frequency is 5GHz. Fig. 4 and 5 are a xoz plane pattern of the antenna at a low frequency operating point (3.4 GHz) and a yoz plane pattern of the antenna at a high frequency operating point (5 GHz), respectively, wherein the 0 ° direction is the normal direction of the antenna, and it can be seen that the antenna achieves dual beam radiation in the horizontal direction and the vertical direction at the low frequency band and the high frequency band, respectively, and the beam elevation angle can be as low as ±32° at both frequency bands, and the cross polarization level is low. Fig. 6 is a beam elevation curve of the antenna with or without parasitic patches, the radiation elevation angles of the antenna in the two frequency bands are + -32 degrees, and the radiation elevation angles of the antenna in the two frequency bands are + -50 degrees and + -52 degrees respectively, so that the dual-frequency dual-beam radiation is realized, and the radiation elevation angles of the dual frequencies are lower.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (2)
1. The low-elevation dual-frequency dual-beam patch antenna is characterized by comprising two I-shaped via loading patch resonators, two via wall loading patch resonators and an open-circuit patch resonator; the two I-shaped via loading patch resonators are symmetrically distributed on two sides of the open-circuit type patch resonator, and the two via wall loading patch resonators are symmetrically distributed on the other two sides of the open-circuit type patch resonator; the signal is fed into the open-circuit type patch resonator through a feed structure and is further coupled to the I-shaped via hole loading patch resonators on two sides and the via hole wall loading patch resonators on the other two sides, and the middle open-circuit type patch resonator works in TM 20 Mode and TM 02 The mould is used for working in a low frequency band and a high frequency band respectively; the I-shaped via loading patch resonator works atEven symmetry TM 11 A die for low frequency operation; the via wall loading patch resonator works in even symmetry TM 01 A die for high frequency operation;
the patch antenna comprises a top metal structure (1), a dielectric substrate (2) and a bottom metal ground (3) which are sequentially stacked; the top-layer metal structure (1) comprises a first rectangular metal patch (11) of the open-circuit patch resonator, a second rectangular metal patch (14) of the I-shaped via loading patch resonator and a third rectangular metal patch (15) of the via wall loading patch resonator; said first rectangular metal patch (11)xThe length in the direction is 0.45 lambda 1 ~ 0.5λ 1 Between lambda 1 Is the free space wavelength corresponding to the center frequency of the low frequency band,ythe length in the direction is 0.35 lambda 2 ~ 0.4λ 2 Between lambda 2 The free space wavelength corresponds to the center frequency of the high frequency band;
two of said second rectangular metal patches (14) are alongxThe directions are positioned at the left and right sides of the first rectangular metal patch (11), and the second rectangular metal patch (14)xThe length in the direction is 0.15 lambda 1 ~ 0.2λ 1 In between the two,ythe length in the direction is 0.2lambda 1 ~ 0.25λ 1 The margin between the first rectangular metal patch (11) and the metal patch is 0.035 lambda 1 ~ 0.04λ 1 Between them; the second rectangular metal patch (14) is distributed with I-shaped via holes, the middle part of the I-shaped via holes isyThe upper and lower parts of the H-shaped via hole arexPassing through the hole wall in the direction;
two of the third rectangular metal patches (15) are arranged alongyThe direction is positioned at the upper side and the lower side of the rectangular metal patch (11), and the third rectangular metal patch (15)xThe length in the direction is 0.3λ 2 ~ 0.35λ 2 In between the two,ythe length in the direction is 0.15 lambda 2 ~ 0.2λ 2 Is at a margin of 0.025λ with the first rectangular metal patch (11) 2 ~ 0.03λ 2 Between them; the middle edge of the third rectangular metal patch (15)xIs directionally arranged withAnd (5) passing through the hole wall.
2. The low elevation dual frequency dual beam patch antenna according to claim 1, wherein said third rectangular metal patch (15)yDirection lengthxThe ratio of the directional length is below 0.5.
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| CN202311141057.9A CN117013249B (en) | 2023-09-06 | 2023-09-06 | Low elevation angle double-frequency dual-beam patch antenna |
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| CN202311141057.9A CN117013249B (en) | 2023-09-06 | 2023-09-06 | Low elevation angle double-frequency dual-beam patch antenna |
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| CN117013249B true CN117013249B (en) | 2024-04-05 |
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