CN117012869A - GaN-based dot matrix interconnection mu LED and preparation method thereof - Google Patents
GaN-based dot matrix interconnection mu LED and preparation method thereof Download PDFInfo
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- 239000011159 matrix material Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000000903 blocking effect Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 238000004528 spin coating Methods 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 abstract description 13
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000005699 Stark effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000011777 magnesium Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000002648 laminated material Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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Abstract
The invention belongs to the technical field of visible light communication light sources, and discloses a GaN-based dot matrix interconnection mu LED and a preparation method thereof. The GaN-based dot matrix interconnection mu LED comprises: the semiconductor device comprises a substrate, an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer, a Mg doped p-GaN layer, a lattice region, a p-type electrode and an n-type electrode. Unlike conventional GaN-based mu LEDs, the lattice interconnected current injection mode adopted by the invention disperses the concentration of injected carriers, and can well improve the uniformity of current injection, thereby improving the tolerance of large injection current; the manufacturing process of the invention is basically the same as that of the conventional GaN-based mu LED, and no extra process with difficulty is added, so that the difficulty of mass production is reduced; the optical power density can be effectively adjusted. The quantum confinement stark effect can be effectively weakened by increasing the arrangement quantity of the dot array elements.
Description
Technical Field
The invention relates to the technical field of visible light communication light sources, in particular to a GaN-based dot matrix interconnection mu LED and a preparation method thereof.
Background
Compared with the traditional wireless communication mode, such as RF communication of Bluetooth, wiFi and the like, the visible light communication has the advantages of low cost, large data capacity, high space reuse rate, high information transmission safety, electromagnetic interference resistance and the like. Thus, the visible light communication technology has become the next generation core communication technology for world-wide competitive angles. The visible light communication system mainly comprises a transmitting end, a transmission channel and a receiving end. In a visible light communication system, the requirements for a light source are very strict in order to realize stable and efficient data transmission. Due to the unique direct-wide bandgap characteristic of group iii nitrides, gaN-based LEDs can theoretically emit light in a range that completely covers the visible light band, and are ideal light sources for visible light communication systems.
At present, the distance between GaN-based LEDs is a high-efficiency light source of a visible light communication system, and a plurality of problems need to be solved. Among these, how to increase the withstand capability of the injected current and thus the optical power density and the modulation bandwidth are one of the most important hot spots. Reducing the active area is a very efficient way to increase the current withstand capability, and the current density increases with decreasing size of the active area, the so-called LED. GaN-based μleds possess many unique advantages as light sources in visible light communication systems due to their smaller active area: (1) Because the injected current has better uniformity, can bear larger current density, inject carriers with higher concentration, improve the spontaneous emission rate and reduce the service life of the carriers; (2) The RC time constant is reduced along with the reduction of the area of the active region, so that the modulation bandwidth is increased; (3) The increase of the specific surface area further improves the light output efficiency, and has larger optical power density. Therefore, the GaN-based mu LED has extremely wide application prospect as a light source of a visible light communication system.
The uniformity of the carrier concentration of the injected mu LED device is directly related to the current tolerance of the device, and although the GaN-based mu LED has good carrier concentration uniformity due to the smaller active area, the uniformity of the current injection can be further improved by optimally designing the geometry and the epitaxial structure of the device, the concentration of the injected carrier is dispersed, so that the congestion effect under the injection of large current is weakened, and the maximum current density bearing capacity is further improved. Therefore, there is a need in the art to develop a GaN-based lattice interconnect LED.
Disclosure of Invention
The invention aims to provide a GaN-based dot matrix interconnection mu LED and a preparation method thereof, which are used for solving the problem that the carrier concentration uniformity and the maximum current density bearing capacity of the existing GaN-based mu LED cannot meet the application of higher requirements.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention provides a GaN-based dot matrix interconnection mu LED, which comprises: the device comprises a substrate, an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer, a Mg doped p-GaN layer, a lattice region, a p-type electrode and an n-type electrode;
the undoped u-GaN layer is positioned on the substrate; the Si doped n-GaN layer is positioned on the undoped u-GaN layer; the active layer is positioned on the Si doped n-GaN layer and consists of an InGaN/GaN quantum well; the electron blocking layer is positioned on the active layer and is p-type doped AlGaN; the Mg-doped p-GaN layer is positioned on the electron blocking layer; the lattice area is positioned on the Mg-doped p-GaN layer and is formed by SiO 2 Forming a lattice area, and evaporating ITO on the lattice area to obtain the ITO; the p-type electrode is located on the lattice region, and the n-type electrode is located on the Si-doped n-GaN layer.
Preferably, the material of the substrate comprises sapphire, gaN, si or SiC; the substrate comprises a planar substrate or a patterned substrate.
Preferably, the epitaxial material of the GaN-based dot matrix interconnection mu LED is one or more of GaN, inGaN and AlGaN.
Preferably, the active layer is a 5-pair InGaN/GaN quantum well structure.
Preferably, the Si doped n-GaN layer has a mesa structure, and comprises an upper mesa and a lower mesa, wherein the upper mesa is used for preparing a lattice region, and the lower mesa is used for forming ohmic contact with the n-type electrode.
The invention also provides a preparation method of the GaN-based dot matrix interconnection mu LED, which comprises the following steps:
(1) Sequentially growing an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer and a Mg doped p-GaN layer on a substrate;
(2) Spin-coating positive photoresist, transferring the mesa pattern onto an epitaxial wafer, etching the mesa by using inductively coupled plasma, removing photoresist and cleaning;
(3) Growing 1 layer of SiO on the structure in the step (2) by a plasma enhanced chemical vapor deposition method 2 A film; spin-coating positive photoresist to transfer the dot pattern to SiO of mesa 2 Wet etching of SiO over thin films 2 Exposing the upper surface of the Mg-doped p-GaN layer, removing photoresist and cleaning;
(4) Evaporating an ITO transparent conductive layer on the structure in the step (3);
(5) Spin-coating positive photoresist, etching ITO by a wet method after photoetching, only leaving ITO above the Mg-doped p-GaN layer mesa, and removing photoresist for cleaning;
(6) Spin-coating positive photoresist, photoetching an electrode area, and evaporating a p-type electrode and an n-type electrode;
(7) And thinning the substrate, and scribing and splitting to be packaged to obtain the GaN-based dot matrix interconnection mu LED.
Preferably, the epitaxial wafer is subjected to pretreatment before use, and the pretreatment specifically comprises the following steps: and cleaning the epitaxial wafer.
Preferably, the ITO has a thickness greater than SiO 2 Film thickness.
Preferably, the depth of the inductively coupled plasma etching is equal to the surface of the Si doped n-GaN layer.
Preferably, the structure of the metal laminated material used for the p-type electrode and the n-type electrode is Cr, al, ti and Au from bottom to top.
Compared with the prior art, the invention has the following beneficial effects:
(1) Unlike conventional GaN-based mu LEDs, the lattice interconnected current injection mode adopted by the invention disperses the concentration of injected carriers, and can well improve the uniformity of current injection, thereby improving the tolerance of large injection current;
(2) The manufacturing process of the invention is basically the same as that of the conventional GaN-based mu LED, and no extra process with difficulty is added, so that the difficulty of mass production is reduced;
(3) The invention can effectively adjust the optical power density by adjusting the arrangement (1×1, 2×2, 3×3, 4×4, etc.) of the matrix elements. The Quantum Confined Stark Effect (QCSE) can be effectively weakened by increasing the arrangement quantity of the array elements.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a cross-sectional structure diagram of a GaN-based dot matrix interconnection μLED according to the invention, wherein the substrate is 1-substrate; 2-undoped u-GaN layer; 3-Si doped n-GaN layer; a 4-n type electrode; 5-an active layer; 6-Electron Blocking Layer (EBL); a 7-Mg doped p-GaN layer; 8-SiO 2 A film; 9-tin-indium oxide (ITO); a 10-p type electrode;
FIG. 2 is a lattice layout diagram of GaN-based lattice interconnected μLEDs according to the present invention;
fig. 3 is a flow effect diagram of a preparation process of a GaN-based dot matrix interconnection μled according to the present invention, wherein (a) is a flow effect diagram of step (1), (b) is a flow effect diagram of step (2), (c) is a flow chart of step (3), (d) is a flow chart of steps (4) (5), (e) is a flow chart of step (6), and (f) is a flow chart of step (7).
Detailed Description
The invention provides a GaN-based dot matrix interconnection mu LED, which comprises: the device comprises a substrate, an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer, a Mg doped p-GaN layer, a lattice region, a p-type electrode and an n-type electrode;
the undoped u-GaN layer is positioned on the substrate; the Si doped n-GaN layer is positioned on the undoped u-GaN layer; the active layer is positioned on the Si doped n-GaN layer and consists of an InGaN/GaN quantum well; the electron blocking layer is positioned on the active layer and is p-type doped AlGaN; the Mg-doped p-GaN layer is positioned on the electron blocking layer; the lattice area is positioned on the Mg-doped p-GaN layer and is formed by SiO 2 Forming a lattice area, and evaporating ITO on the lattice area to obtain the ITO; the p-type electrode is positionedAnd the n-type electrode is positioned on the Si doped n-GaN layer on the lattice region.
In the GaN-based dot matrix interconnection mu LED of the invention, the dot matrix area is completely covered by ITO, and the thickness of the ITO is larger than that of SiO 2 The film thickness, the lattice element position is filled with ITO, the lower Mg doped p-GaN layer and the upper p-type electrode are connected, the non-lattice element position is SiO 2 The top of which is also covered by ITO; the p-type electrode is a specially designed annular electrode, and can improve the uniformity of current injection.
In the GaN-based dot matrix interconnection mu LED, mg-doped p-GaN materials among dot matrix elements are reserved, and the uniformity of carrier concentration in a quantum well is improved.
In the GaN-based lattice interconnection mu LED, the shape and arrangement of lattice elements in the lattice area are diversified. Wherein, the shape of the array element includes but is not limited to triangle, square, rectangle or circle; the array element arrangement includes, but is not limited to, 1×1, 2×2, 3×3, or 4×4.
In the GaN-based lattice interconnection mu LED, the sizes of all lattice elements in the lattice area are equal, and the distances between the lattice elements are equal.
In the invention, the material of the substrate comprises sapphire, gaN, si or SiC; the substrate comprises a planar substrate or a patterned substrate.
In the invention, the epitaxial material of the GaN-based dot matrix interconnection mu LED is one or more of GaN, inGaN and AlGaN.
In the invention, the active layer is of a 5-pair InGaN/GaN quantum well structure; light emitted by the GaN-based dot matrix interconnected mu LEDs originates from the active layer.
In the invention, the Si doped n-GaN layer is in a mesa structure and comprises an upper mesa and a lower mesa, wherein the upper mesa is used for preparing a lattice region, and the lower mesa is used for forming ohmic contact with an n-type electrode.
The GaN-based dot matrix interconnection mu LED is different from a conventional mu LED, and a plurality of channels are injected into the current of the GaN-based dot matrix interconnection mu LED.
The invention also provides a preparation method of the GaN-based dot matrix interconnection mu LED, which comprises the following steps:
(1) Sequentially growing an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer and a Mg doped p-GaN layer on a substrate;
(2) Spin-coating positive photoresist, transferring the mesa pattern onto an epitaxial wafer, etching the mesa by using inductively coupled plasma, removing photoresist and cleaning;
(3) Growing 1 layer of SiO on the structure in the step (2) by a plasma enhanced chemical vapor deposition method 2 A film; spin-coating positive photoresist to transfer the dot pattern to SiO of mesa 2 Wet etching of SiO over thin films 2 Exposing the upper surface of the Mg-doped p-GaN layer, removing photoresist and cleaning;
(4) Evaporating an ITO transparent conductive layer on the structure in the step (3);
(5) Spin-coating positive photoresist, etching ITO by a wet method after photoetching, only leaving ITO above the Mg-doped p-GaN layer mesa, and removing photoresist for cleaning;
(6) Spin-coating positive photoresist, photoetching an electrode area, and evaporating a p-type electrode and an n-type electrode;
(7) And thinning the substrate, and scribing and splitting to be packaged to obtain the GaN-based dot matrix interconnection mu LED.
In the invention, the epitaxial wafer is subjected to pretreatment before use, and the pretreatment specifically comprises the following steps: cleaning the epitaxial wafer; the impurity residue on the surface can be removed.
In the invention, the thickness of the ITO is larger than that of SiO 2 Film thickness.
In the invention, the depth of the inductively coupled plasma etching is equal to the surface of the Si doped n-GaN layer.
In the invention, the structure of the metal laminated material used for the p-type electrode and the n-type electrode is Cr, al, ti and Au from bottom to top.
In the invention, the wet etching needs to precisely control the etching time so as to avoid over etching or under etching.
The technical solutions provided by the present invention are described in detail below with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
The embodiment provides a GaN-based dot matrix interconnection mu LED, which comprises the following steps:
the substrate is made of sapphire and is a plane substrate;
an undoped u-GaN layer located on the substrate 1; the layer is composed of undoped GaN with the thickness of 2 mu m, and is grown by a Metal Organic Chemical Vapor Deposition (MOCVD) method, wherein in the process, high-purity ammonia gas is used as a nitrogen source, and trimethylgallium and triethylgallium are used as gallium sources;
the Si doped n-GaN layer is positioned on the undoped u-GaN layer, and the thickness of the Si doped n-GaN layer is 3 mu m; the doping concentration is 3 multiplied by 10 18 cm -3 The doping source is silane, high-purity ammonia gas is used as a nitrogen source, trimethyl gallium and triethyl gallium are used as gallium sources, and an ohmic contact n-type electrode is plated on the Si doped n-GaN layer;
the active layer is positioned on the Si doped n-GaN layer and consists of 5 pairs of InGaN/GaN quantum wells; inGaN takes high-purity ammonia gas as a nitrogen source, trimethyl indium as an indium source, trimethyl gallium and triethyl gallium as a gallium source, and GaN takes high-purity ammonia gas as a nitrogen source, and trimethyl gallium and triethyl gallium as gallium sources;
an Electron Blocking Layer (EBL) on the active layer, the electron blocking layer being p-type doped AlGaN having a thickness of 32nm; the Electron Blocking Layer (EBL) is p-AlGaN grown by taking magnesium dipentahydrate as a doping source, taking high-purity ammonia gas as a nitrogen source, taking trimethylaluminum as an aluminum source and taking trimethylgallium and triethylgallium as gallium sources, and the doping concentration is 1 multiplied by 10 20 cm -3 ；
A Mg doped p-GaN layer on the electron blocking layer; the Mg-doped p-GaN layer takes magnesium dipentahydrate as a doping source, high-purity ammonia gas as a nitrogen source, trimethyl gallium and triethyl gallium as gallium sources, and the doping concentration is 1 multiplied by 10 20 cm -3 And is a lattice region on the Mg-doped p-GaN layer, siO 2 Forming a dot pattern in contact with tin-indium oxide (ITO) in the dot pattern;
cleaning the epitaxial wafer to remove impurity residues on the surface;
spin-coating positive photoresist, defining a mesa pattern (420 mu m multiplied by 420 mu m) on an epitaxial wafer by using a photoetching machine, developing in a developing solution, etching the mesa by using Inductively Coupled Plasma (ICP) by taking the photoresist as a mask, and removing and cleaning the photoresist until the etching depth reaches the Si doped n-GaN layer;
growing a 200nm SiO layer on the Mg-doped p-GaN layer by PECVD 2 A film;
spin-coating positive photoresist, defining lattice pattern to SiO by using photoetching machine 2 Over the film, in this embodiment, the dot patterns have four arrangements, 1×1, 2×2, 3×3, 4×4, respectively, as shown in fig. 2; developing in a developing solution to expose SiO 2 Wet etching SiO with BOE on upper surface 2 Exposing the upper surface of the Mg-doped p-GaN layer; in wet etching of SiO 2 When in use, the time is strictly controlled, so that over corrosion or under corrosion is avoided;
evaporating a tin-indium oxide (ITO) transparent conductive layer with thickness greater than SiO on the above structure 2 A thin film, which is selected to be 280nm to fully cover the lattice area;
spin-coating positive photoresist, defining a mesa region on the Mg-doped p-GaN layer by using a photoetching machine, developing in a developing solution, removing ITO except the mesa region on the Mg-doped p-GaN layer by wet etching, and performing high-temperature annealing for 30min to increase the conductivity of the ITO;
spin-coating positive photoresist, defining an electrode area by a photoetching machine, developing in a developing solution, evaporating a p-type electrode, wherein the laminated structures of the p-type electrode and an n-type electrode are Cr, al, ti and Au (the thicknesses of Cr, al, ti and Au are respectively 70nm, 1700nm, 50nm and 200 nm) from bottom to top;
and thinning the substrate, and scribing and splitting to be packaged to obtain the GaN-based dot matrix interconnection mu LED.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A GaN-based lattice interconnect LED, the GaN-based lattice interconnect LED comprising: the device comprises a substrate, an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer, a Mg doped p-GaN layer, a lattice region, a p-type electrode and an n-type electrode;
the undoped u-GaN layer is positioned on the substrate; the Si doped n-GaN layer is positioned on the undoped u-GaN layer; the active layer is positioned on the Si doped n-GaN layer and consists of an InGaN/GaN quantum well; the electron blocking layer is positioned on the active layer and is p-type doped AlGaN; the Mg-doped p-GaN layer is positioned on the electron blocking layer; the lattice area is positioned on the Mg-doped p-GaN layer and is formed by SiO 2 Forming a lattice area, and evaporating ITO on the lattice area to obtain the ITO; the p-type electrode is located on the lattice region, and the n-type electrode is located on the Si-doped n-GaN layer.
2. The GaN based dot matrix interconnected μled of claim 1, wherein the material of the substrate comprises sapphire, gaN, si or SiC; the substrate comprises a planar substrate or a patterned substrate.
3. The GaN based lattice interconnect LED of claim 2, wherein the epitaxial material of the GaN based lattice interconnect LED is one or more of GaN, inGaN and AlGaN.
4. A GaN based lattice interconnect μled according to any one of claims 1 to 3, wherein the active layer is a 5-pair InGaN/GaN quantum well structure.
5. The GaN based lattice interconnect LED of claim 4, wherein the Si doped n-GaN layer is a mesa structure comprising an upper mesa for preparing the lattice region and a lower mesa for forming an ohmic contact with the n-type electrode.
6. The method for preparing the GaN-based dot matrix interconnected mu LED according to any one of claims 1 to 5, which is characterized by comprising the following steps:
(1) Sequentially growing an undoped u-GaN layer, a Si doped n-GaN layer, an active layer, an electron blocking layer and a Mg doped p-GaN layer on a substrate;
(2) Spin-coating positive photoresist, transferring the mesa pattern onto an epitaxial wafer, etching the mesa by using inductively coupled plasma, removing photoresist and cleaning;
(3) Growing 1 layer of SiO on the structure in the step (2) by a plasma enhanced chemical vapor deposition method 2 A film; spin-coating positive photoresist to transfer the dot pattern to SiO of mesa 2 Wet etching of SiO over thin films 2 Exposing the upper surface of the Mg-doped p-GaN layer, removing photoresist and cleaning;
(4) Evaporating an ITO transparent conductive layer on the structure in the step (3);
(5) Spin-coating positive photoresist, etching ITO by a wet method after photoetching, only leaving ITO above the Mg-doped p-GaN layer mesa, and removing photoresist for cleaning;
(6) Spin-coating positive photoresist, photoetching an electrode area, and evaporating a p-type electrode and an n-type electrode;
(7) And thinning the substrate, and scribing and splitting to be packaged to obtain the GaN-based dot matrix interconnection mu LED.
7. The method for preparing the GaN-based dot matrix interconnected mu LED according to claim 6, wherein the epitaxial wafer is subjected to pretreatment before use, and the pretreatment specifically comprises the following steps: and cleaning the epitaxial wafer.
8. The method for manufacturing GaN-based dot matrix interconnected μLED of claim 7, wherein the thickness of the ITO is greater than SiO 2 Film thickness.
9. The method for manufacturing the GaN matrix lattice interconnect LED of claim 8, wherein the inductively coupled plasma etching is performed to a depth of the surface of the Si doped n-GaN layer.
10. The method for manufacturing the GaN matrix dot matrix interconnection LED of claim 9, wherein the metal laminate used for the p-type electrode and the n-type electrode has a structure of Cr, al, ti and Au in order from bottom to top.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310904033.8A CN117012869A (en) | 2023-07-20 | 2023-07-20 | GaN-based dot matrix interconnection mu LED and preparation method thereof |
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| CN202310904033.8A CN117012869A (en) | 2023-07-20 | 2023-07-20 | GaN-based dot matrix interconnection mu LED and preparation method thereof |
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| CN202310904033.8A Pending CN117012869A (en) | 2023-07-20 | 2023-07-20 | GaN-based dot matrix interconnection mu LED and preparation method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN117012869A (en) |
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2023
- 2023-07-20 CN CN202310904033.8A patent/CN117012869A/en active Pending
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