CN116995185A - 一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法及应用 - Google Patents
一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法及应用 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000002131 composite material Substances 0.000 title claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 30
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 22
- 239000002070 nanowire Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 87
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 239000002699 waste material Substances 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 238000002156 mixing Methods 0.000 claims abstract description 21
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 13
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 11
- 239000010432 diamond Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000012298 atmosphere Substances 0.000 claims abstract description 8
- 238000000197 pyrolysis Methods 0.000 claims abstract description 8
- 239000002210 silicon-based material Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 5
- 150000007524 organic acids Chemical class 0.000 claims abstract description 5
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 5
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 5
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 5
- 239000002243 precursor Substances 0.000 claims abstract description 5
- 238000003763 carbonization Methods 0.000 claims abstract description 4
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 238000000967 suction filtration Methods 0.000 claims abstract description 4
- 239000012924 metal-organic framework composite Substances 0.000 claims abstract description 3
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 3
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 239000012621 metal-organic framework Substances 0.000 claims description 14
- 238000000227 grinding Methods 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 11
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 239000007810 chemical reaction solvent Substances 0.000 claims description 4
- 239000006258 conductive agent Substances 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 4
- 239000000661 sodium alginate Substances 0.000 claims description 4
- 235000010413 sodium alginate Nutrition 0.000 claims description 4
- 229940005550 sodium alginate Drugs 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical class [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical group [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000003760 magnetic stirring Methods 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 claims description 2
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 claims description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052744 lithium Inorganic materials 0.000 abstract description 5
- 239000010406 cathode material Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009830 intercalation Methods 0.000 abstract description 3
- 230000002687 intercalation Effects 0.000 abstract description 3
- 238000009831 deintercalation Methods 0.000 abstract description 2
- 239000007772 electrode material Substances 0.000 abstract description 2
- 239000000872 buffer Substances 0.000 abstract 1
- 239000010405 anode material Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000006138 lithiation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
本发明属于锂离子电池负极材料领域,具体涉及为一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法及应用,制备方法:S1:将金刚线切割废硅粉与无机酸组合溶液混合,抽滤得到硅粉;S2:将上述预处理硅粉置于管式炉中,在惰性氛围下进行热解处理,得硅料;S3:将上述硅料、有机酸、聚乙烯吡络烷酮混合均匀,置于含有金属前驱体的反应釜中,混合均匀,得到硅/氧化硅/MOF复合材料;S4:将得到的混合物在保护气体氛围下进行高温碳化烧结,最终得到硅/氧化硅/氮掺杂多孔碳纳米线复合材料。该材料用于制备锂离子电池负极,成本低,工艺简单,大幅提高电极材料的导电性和结构的完整性,缓冲脱嵌锂过程中巨大的体积膨胀效应。
Description
技术领域
本发明属于锂离子电池负极材料领域,具体涉及为一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法及应用。
背景技术
锂离子电池由于脱锂电位低,资源丰富,绿色环保,比能量较高、无记忆效应和工作电压高等优势,在手机、笔记本电脑、数码相机和新能源电动汽车等领域得到了广泛应用;相比于商用的石墨负极材料 (372mAh/g),硅材料具有最高理论嵌锂比容量(4200mAh/g,合金相Li22Si5)、脱锂电位低和地球资源丰富等优势,是高能量密度LIBs最有希望替代石墨的负极材料,备受各界高度关注。但硅的导电性差,不利于电子传导,且在锂化/脱锂的过程中会产生约300%的体积变化,导致硅电极的粉化和结构崩塌。此外,巨大的体积变化会使硅表面形成不稳定的固体电解质界面(SEI),导致电极极化增大、库伦效率降低和循环稳定性变差等,同时制作成本高。
硅片作为主要基础材料,其硅锭切割用量指标也连年攀升,目前,硅锭主要通过金刚线切割进行加工,此过程伴随约35~40%的高纯硅以粉末形式进入到切割废料浆中,产生的切割废硅粉约为30万吨/年。研究表明,金刚线切割微硅粉的粒径通常在0.5-10.0μm之间,其含有约5%的碳杂质、10%的氧杂质及痕量Al、Fe、Ni等金属杂质,这些杂质主要来源于切割过程中引入的聚乙二醇切割液、表面氧化及金刚线脱落物。目前,过高的杂质含量导致此类微硅粉被低值化利用或废弃,造成了严重的资源浪费和环境污染。因此,将兼具高能量密度、高振实密度、低成本特征的金刚线切割微硅粉废料回收处理,实现金刚线切割微硅粉废料的高值化再生利用,并将其用于LIBs负极材料中,极具实用价值。
发明内容
本发明的目的是提供一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法及应用,解决锂电池硅基负极制备成本高、循环过程中巨大体积膨胀效应、导电性差以及硅废料难以回收的问题。
为达到上述目的,本发明采用如下技术方案:
一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法,具体步骤如下:
S1:将金刚线切割废硅粉与无机酸组合溶液混合磁力搅拌进行化学反应,腐蚀溶液质量浓度控制在2-20%,反应温度在25-80℃,反应时间在1-24h,用去离子水和无水乙醇溶液定量抽滤3-6次,得到硅粉;
S2:将上述预处理硅粉置于管式炉中,在惰性氛围下进行热解处理,热解温度在400-800℃,保温时间在1-6h,使废硅粉表面聚乙二醇粘污层有效热解挥发,获得较纯的硅料;
S3:将上述硅料、有机酸、聚乙烯吡络烷酮以1-3: 3-6: 6-9的质量比例混合均匀,并置于含有金属前驱体、反应溶剂的聚四氟乙烯内衬的不锈钢反应釜中,金属前驱体、反应溶剂体积比为1-6:6-12,磁力搅拌混合均匀,然后进行MOF原位自组装反应,反应温度在60-300℃,反应时间为5-30h,得到硅/氧化硅/MOF复合材料;
S4:将得到的硅/氧化硅/MOF的混合物在保护气体氛围下进行高温碳化烧结,反应温度在500-1000℃,最高温度保温时间1-8h,最终得到硅/氧化硅/氮掺杂多孔碳纳米线复合材料。
所述步骤S1中的无机酸溶液为HF、HCl、HNO3、H2SO4中的一种或任意组合。
所述步骤S3中反应溶剂为N,N-二甲基甲酰胺、无水乙醇或去离子水中的一种或任意组合;所述有机酸溶液为对苯二甲酸溶液、均苯三甲酸溶液或1,4-萘二羧酸溶液中的一种或任意组合;所述金属前驱体为铝、铁、铜、铬、镍的硫酸盐或者氯酸盐中的一种或任意组合。
所述保护气体为氮气、氩气、氦气惰性气体、氢气中的一种或任意组合。
一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的应用,用于制备锂离子电池负极。
制备过程如下:
(1)将硅/氧化硅/多孔碳纳米线复合材料研磨0.2-1h,所述复合材料比表面积为60-500m2/g;
(2)将研磨后的复合材料与导电剂、粘结剂按照质量比7-8:2-3:2-3 混合,并倒入溶剂中研磨0.5-1h,得到均匀浆料;
(3)将浆料涂覆在金属铜集电极上,涂层的厚度为50-200µm,在60-120℃下置于真空干燥箱中烘8-15h,得到锂离子电池负极电极片。
所述步骤(2)中导电剂为石墨粉或导电炭黑,粘结剂为羧甲基纤维素钠或聚偏氟乙烯或海藻酸钠,溶剂为去离子水或N-甲基吡咯烷酮。
与现有技术相比,本发明取得的有益效果:
(1)通过原位自组装-碳化的方法将废硅粉制备成锂离子电池的高倍率性能负极材料即硅/氧化硅/氮掺杂多孔碳纳米复合负极,可大幅提高电极材料的导电性和结构的完整性,提供锂离子和电子快速传输的多孔导电载体,缓冲脱嵌锂过程中巨大的体积膨胀效应,显示优越的倍率性能;
(2)原料成本低廉,工艺流程简单,易于规模化工业生产;
(3)硅废料得以回收,实现再生利用,避免环境污染和资源浪费。
附图说明
图1为实施例1中废硅粉预处理后的SEM图;
图2为实施例1中硅/氧化硅/MOF的SEM图;
图3为实施例1中硅/氧化硅/氮掺杂多孔碳的SEM图;
图4为实施例1中硅/氧化硅/MOF的XRD图;
图5为实施例1中硅/氧化硅/氮掺杂多孔碳的XRD图;
图6为实施例1中硅/氧化硅/氮掺杂多孔碳的循环性能图。
实施方式
下面结合具体实施例对本发明的技术方案做详细的说明。
实施例
以金刚线切割废硅粉为原材料,D50粒径尺寸大小约为1μm,将所述废硅粉与质量浓度5%的HF溶液进行化学反应,磁力温和搅拌8h,反应温度在50℃,用去离子水和无水乙醇溶液定量抽滤3次得到沉淀物,将上述沉淀物在氩气气氛保护下对废硅粉表面聚乙二醇粘污层进行热解处理,预处理后获得纯度较高的硅粉;将上述预处理硅粉、对苯二甲酸、聚乙烯吡络烷酮以1:3:9的质量比例混合均匀,并置于含有三氯化铝溶液、去离子水(1:12的体积比)的聚四氟乙烯内衬的不锈钢反应釜中,混合均匀,然后进行MOF原位自组装反应,加热温度在120℃,水热时间为9h,使硅粉表面包覆氧化硅和MOF双壳层,用于提高硅结构的强度和结构稳定性;将得到的硅/氧化硅/MOF的混合物在氮气氛围下进行高温烧结,反应温度为600℃,保温3h,最终得到硅/氧化硅/氮掺杂多孔碳纳米线复合材料。将硅/氧化硅/多孔碳纳米线复合材料研磨0.5 h,得到复合材料比表面积为103.6 m2/g,将其研磨后与导电炭黑、海藻酸钠按照质量比7:1.5:1.5 混合研磨得到均匀浆料;将浆料涂覆在金属铜集电极上,涂层的厚度为100 µm,在80℃下置于真空干燥箱中烘12 h,得到锂离子电池负极材料。
电池倍率性能测试结果表明;在电流密度0.1 A/g下的首次放电和充电比容量分别达到2774.4和1990.3 mAh/g,对应第10圈分别为1182.3和1211.5 mAh/g,经过不同电流密度循环后,第61圈的放电和充电比容量分别达到1329.0和1294.3 mAh/g,显示优越的倍率性能。
实施例
以金刚线切割废硅粉为原材料,将所述微米废硅粉与质量浓度5%的HF溶液进行化学反应,磁力温和搅拌8h,反应温度在50℃,用去离子水和无水乙醇溶液定量抽滤3次得到沉淀物,将上述沉淀物在Ar气氛保护下对废硅粉表面聚乙二醇粘污层进行热解处理,预处理后获得纯度较高的硅粉;将上述预处理硅粉、对苯二甲酸、聚乙烯吡络烷酮以1:3:9的质量比例混合均匀,并置于含有三氯化铝溶液、去离子水(1:12体积比)的聚四氟乙烯内衬的不锈钢反应釜中,混合均匀,然后进行MOF原位生长,加热温度在150℃,水热时间为9h,使硅粉表面包覆氧化硅和MOF双壳层,用于提高硅结构的强度和结构稳定性;将得到的硅/氧化硅/MOF的混合物在氮气氛围下进行高温烧结,反应温度为600℃,保温3h,最终得到硅/氧化硅/氮掺杂多孔碳复合材料。将硅/氧化硅/多孔碳复合材料研磨0.5 h,得到复合材料比表面积为99.5 m2/g,将其研磨后与导电炭黑、海藻酸钠按照质量比7:1.5:1.5 混合研磨得到均匀浆料;将浆料涂覆在金属铜集电极上,涂层的厚度为100 µm,在80℃下置于真空干燥箱中烘12 h,得到锂离子电池负极材料。
电池倍率性能测试结果表明;在电流密度0.1 A/g下的首次放电比容量达到2524.4 mAh/g,第61圈的放电达到1044.3 mAh/g,显示较好的倍率性能。
实施例
以金刚线切割废硅粉为原材料,将所述微米废硅粉与质量浓度5%的HF溶液进行化学反应,磁力温和搅拌8h,反应温度在50℃,用去离子水和无水乙醇溶液定量抽滤3次得到沉淀物,将上述沉淀物在Ar气氛保护下进行聚乙二醇粘污层的热解处理,预处理后获得纯度较高的硅粉;将上述预处理硅粉、对苯二甲酸以1:3的质量比例混合均匀,并置于含有三氯化铝溶液、去离子水(1:12体积比)的聚四氟乙烯内衬的不锈钢反应釜中,混合均匀,然后进行MOF原位生长,加热温度在150℃,水热时间为9h,使硅粉表面包覆氧化硅和MOF双壳层,用于提高硅结构的强度和结构稳定性;将得到的硅/氧化硅/MOF的混合物在氮气氛围下进行高温烧结,反应温度为600℃,保温3h,最终得到硅/氧化硅/多孔碳复合材料。将硅/氧化硅/多孔碳复合材料研磨0.5 h,得到复合材料比表面积为123.4 m2/g,将其研磨后与导电炭黑、海藻酸钠按照质量比7:1.5:1.5 混合研磨得到均匀浆料;将浆料涂覆在金属铜集电极上,涂层的厚度为100 µm,在80℃下置于真空干燥箱中烘12 h,得到锂离子电池负极材料。
电池倍率性能测试结果表明;在电流密度0.1 A/g下的首次放电比容量达到2252.1 mAh/g,第61圈的放电达到663.5 mAh/g。
Claims (7)
1.一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法,具体步骤如下:
S1:将金刚线切割废硅粉与无机酸组合溶液混合磁力搅拌进行化学反应,腐蚀溶液质量浓度控制在2-20%,反应温度在25-80℃,反应时间在1-24h,用去离子水和无水乙醇溶液定量抽滤3-6次,得到硅粉;
S2:将上述预处理硅粉置于管式炉中,在惰性氛围下进行热解处理,热解温度在400-800℃,保温时间在1-6h,使废硅粉表面聚乙二醇粘污层有效热解挥发,获得硅料;
S3:将上述硅料、有机酸、聚乙烯吡络烷酮以1-3: 3-6: 6-9的质量比例混合均匀,并置于含有金属前驱体、反应溶剂的聚四氟乙烯内衬的不锈钢反应釜中,金属前驱体、反应溶剂体积比为1-6:6-12,磁力搅拌混合均匀,然后进行MOF原位自组装反应,反应温度在60-300℃,反应时间为5-30h,得到硅/氧化硅/MOF复合材料;
S4:将得到的硅/氧化硅/MOF的混合物在保护气体氛围下进行高温碳化烧结,反应温度在500-1000℃,最高温度保温时间1-8h,最终得到硅/氧化硅/氮掺杂多孔碳纳米线复合材料。
2.根据权利要求1所述的一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法,其特征在于,所述步骤S1中的无机酸溶液为HF、HCl、HNO3、H2SO4中的一种或任意组合。
3.根据权利要求1所述的一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法,其特征在于,所述步骤S3中反应溶剂为N,N-二甲基甲酰胺、无水乙醇或去离子水中的一种或任意组合;所述有机酸溶液为对苯二甲酸溶液、均苯三甲酸溶液或1,4-萘二羧酸溶液中的一种或任意组合。
4.根据权利要求1或3中任意一项所述的一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法,其特征在于,所述步骤S3金属前驱体为铝、铁、铜、铬、镍的硫酸盐或者氯酸盐中的一种或任意组合。
5.根据权利要求1中所述的一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的制备方法,其特征在于,所述保护气体为氮气、氩气、氦气惰性气体、氢气中的一种或任意组合。
6.以权利要求1-5任意一项所述的制备方法制得的一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的应用,其特征在于,用于制备锂离子电池负极,制备过程如下:
(1)将硅/氧化硅/多孔碳纳米线复合材料研磨0.2-1h,所述复合材料比表面积为60-500m2/g;
(2)将研磨后的复合材料与导电剂、粘结剂按照质量比7-8:2-3:2-3 混合,并倒入溶剂中研磨0.5-1h,得到均匀浆料;
(3)将浆料涂覆在金属铜集电极上,涂层的厚度为50-200µm,在60-120℃下置于真空干燥箱中烘8-15h,得到锂离子电池负极电极片。
7.根据权利要求6所述的一种硅/氧化硅/氮掺杂多孔碳纳米线复合材料的应用,其特征在于,所述步骤(2)中导电剂为石墨粉或导电炭黑,粘结剂为羧甲基纤维素钠或聚偏氟乙烯或海藻酸钠,溶剂为去离子水或N-甲基吡咯烷酮。
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