CN116995109A - Low-temperature welded back contact photovoltaic module and preparation method thereof - Google Patents
Low-temperature welded back contact photovoltaic module and preparation method thereof Download PDFInfo
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- CN116995109A CN116995109A CN202311104344.2A CN202311104344A CN116995109A CN 116995109 A CN116995109 A CN 116995109A CN 202311104344 A CN202311104344 A CN 202311104344A CN 116995109 A CN116995109 A CN 116995109A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 72
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- 238000007639 printing Methods 0.000 claims abstract description 15
- 239000003292 glue Substances 0.000 claims abstract description 14
- 238000010030 laminating Methods 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
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- 238000003848 UV Light-Curing Methods 0.000 claims description 6
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- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 16
- 238000009413 insulation Methods 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000003825 pressing Methods 0.000 abstract description 4
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The application belongs to the field of back contact photovoltaic modules, and discloses a back contact photovoltaic module welded at low temperature and a preparation method thereof, wherein insulating glue is preferably printed on a thin grid near a main grid and opposite to the main grid to achieve the effect of area insulation; by printing a low Wen Xigao on PAD points on the back of the back contact battery component; then laying a low-temperature welding strip along the positive and negative electrode main grid lines on the back, and increasing the contact area of the positive and negative electrode main grid lines by prepressing a pressing tool; finally, pre-fixing can be carried out through heating and drying equipment such as an oven/tunnel furnace, a pre-crosslinked adhesive film/PVB and other local surface low-fluidity adhesive films are preferably laid on the back surface, and the adhesive film enters a laminating machine for curing, so that the binding force between the low-temperature welding belt and the collecting current of the positive and negative electrode main grid lines is ensured. According to the embodiment of the application, the low Wen Xigao is printed in the PAD point area, and the low-temperature welding strip is matched after pre-curing, so that the effective combination of the aluminum grid line with weak bonding force and the low-temperature welding strip can be ensured, the effect of collecting current is achieved, and the natural silver paste area combination is better.
Description
Technical Field
The application belongs to the technical field of back contact photovoltaic modules, and particularly relates to a back contact photovoltaic module welded at low temperature and a preparation method thereof.
Background
With the development of solar cells and modules, the back contact photovoltaic module is favored by photovoltaic enterprises because the front (light receiving surface) of the back contact photovoltaic module is not shielded by a grid line, and the anode and the cathode are arranged on the back (non-light receiving surface) so as to improve the power of the photovoltaic module.
The back contact photovoltaic module is mainly a laminated piece of a back cover plate, a back adhesive film, a back contact battery array, a front adhesive film and a front cover plate which are sequentially laminated, and the battery array is a battery string formed by connecting a plurality of back contact batteries by using welding belts; in the battery structure, the metal grid line is responsible for leading the photo-generated current in the battery body to the outside of the battery. At present, the conventional welding is basically a high-temperature welding mode, and the problems of warping, micro-hidden cracking and the like of the surface of the battery due to thermal stress can be caused. In addition, broken grids are easy to appear in the existing manufacturing process, tin on the welding strip is melted and then forms tin-silver alloy with the silver paste of the main grid, so that the bad phenomenon of overhigh resistance of the area is caused, and further, the internal electrode of the battery piece is damaged, the power attenuation of the assembly is directly influenced, the service life of the assembly is reduced, or the scrapping is caused.
Disclosure of Invention
Aiming at the defects in the prior art, the application provides a back contact photovoltaic module welded at low temperature and a preparation method thereof.
The application provides a back contact battery welded at low temperature, which is provided with a first main grid line and a second main grid line at intervals along a first direction of the back of a battery piece; the first main grid line and the second main grid line extend along the second direction of the back of the battery piece and have opposite polarities; the first direction and the second direction are intersected with each other on the back surface of the battery piece;
the first main grid line and the second main grid are respectively and correspondingly and electrically connected with a first thin grid line and a second thin grid line, and are used for collecting current with corresponding polarity; the first thin grid line and the second thin grid line are mutually arranged at intervals in the second direction in an insulating manner;
pad points are arranged on the first main grid line and the second main grid line; the surfaces of the pad points are provided with low-temperature electric connection layers; the low-temperature electric connection layer is connected and combined with the low-temperature welding strip and is used for fixing the battery piece interconnection welding strip.
Preferably, an insulating glue layer is arranged at the edge of the tail end of the second thin grid line and near the first main grid line, and/or inside the tail end of the first thin grid line and near the second main grid line; each insulating adhesive layer is preferably a UV-cured insulating adhesive layer, and the thickness of the insulating adhesive layer is greater than the height of the corresponding covered gate line and can be 40-50 μm.
Preferably, the melting temperature of the low-temperature electric connection layer is 90-135 ℃, preferably a low-temperature solder paste layer, and the material of the low-temperature electric connection layer is further a tin-lead-bismuth system with the melting temperature of 90-135 ℃.
Preferably, the melting point of the low-temperature welding strip is 90-130 ℃, the material of the low-temperature welding strip is a tin-bismuth-silver system with the melting point of 90-135 ℃, the low-temperature welding strip can be a flat low-temperature welding strip, and the combination is more stable.
Preferably, the back edge of the battery is further provided with edge fine grid lines which are opposite to the adjacent first fine grid lines or second fine grid lines in polarity and are arranged in an insulating manner at intervals in the second direction, pad points are arranged on the edge fine grid lines, and the height of the tail end positions of the adjacent first fine grid lines or second fine grid lines is smaller than that of the pad points of the edge fine grid lines.
Preferably, the positive electrode of the back contact battery is an aluminum-containing positive electrode, and the negative electrode is a silver-containing negative electrode.
The application provides a low-temperature welded back contact photovoltaic module, which comprises a laminated piece, wherein the laminated piece comprises a front cover plate, a front adhesive film, a battery array, a back adhesive film and a back cover plate which are sequentially laminated, and the battery array is a plurality of back contact batteries.
The application provides a preparation method of a back contact photovoltaic module, which comprises the following steps:
s1, laying a front adhesive film on a front cover plate;
s2, placing a back contact battery part on the front adhesive film, optionally printing insulating adhesive on an end area, which is near the positive electrode main grid and/or the negative electrode main grid on the back and is not electrically connected with the main grid, of the fine grid, and curing to form an insulating adhesive layer;
s3, printing low-temperature electric connection materials on PAD points of all main grids on the back of the back contact battery part, and performing pre-curing;
s4, laying a low-temperature welding strip on the pre-cured low-temperature electric connection material;
and S5, laying a back adhesive film and a back cover plate on the low-temperature welding strip, and then laminating to obtain the low-temperature welded back contact photovoltaic module.
Preferably, in the step S2, a UV-curable insulating adhesive is printed, and the insulating adhesive layer is formed by curing the printed insulating adhesive layer for 2-3S by irradiation of UV light.
Preferably, the low-temperature electric connection material in the step S3 is a tin-lead-bismuth system with the melting temperature of 90-135 ℃, and the pre-solidification temperature is lower than 80 ℃ for 2-5S;
the low-temperature welding strip in the step S4 is a tin-bismuth-silver system, and the melting point is 90-135 ℃.
Preferably, the back adhesive film in the step S5 is a PVB film for pre-fixing a low-temperature solder tape or a low-fluidity pre-crosslinked adhesive film, and the laminating temperature is 140-160 ℃.
Compared with the prior art, the back contact battery piece is provided with the first main grid line and the second main grid line at intervals along the first direction of the back contact battery piece; the first main grid line and the second main grid line extend along the second direction of the back of the battery piece and have opposite polarities; the first direction and the second direction are intersected with each other on the back surface of the battery piece; the first main grid line and the second main grid are respectively and correspondingly and electrically connected with a first thin grid line and a second thin grid line, and are used for collecting current with corresponding polarity; the first thin grid line and the second thin grid line are mutually arranged at intervals in the second direction in an insulating manner; pad points are arranged on the first main grid line and the second main grid line; the surfaces of the pad points are provided with low-temperature electric connection layers; the low-temperature electric connection layer is connected and combined with the low-temperature welding strip and is used for fixing the battery piece interconnection welding strip. The grid line and the welding strip of the back contact battery can be stably combined, and a good effect of collecting current can be achieved.
Further, the embodiment of the application designs a novel low-temperature welded back contact battery and a photovoltaic module thereof, wherein insulating glue is printed on a thin grid (the end part of the thin grid which is not electrically connected with a main grid) of an electrode opposite to the main grid near the main grid, so that the effect of area insulation (preferably UV curing) can be achieved; then printing low-temperature electric connection materials on PAD points on the back surface of the back contact battery component; then lay flat low-temperature welding strip along positive and negative electrode main grid line of the back, can also increase the three area of contact through the precompaction of the clamp; finally, pre-fixing can be carried out through heating and drying equipment such as an oven/tunnel furnace, a pre-crosslinked adhesive film/PVB and other local surface low-fluidity adhesive films are preferably laid on the back surface, and the adhesive film enters a laminating machine for curing, so that the combination capability of the low-temperature welding belt and the collecting current of the positive and negative electrode main grid lines is ensured. Printing a low-temperature electric connection material in a PAD point area, and matching a low-temperature welding strip after pre-curing; in the EL shooting picture, the effective combination of the aluminum grid line with weak bonding force and the low-temperature welding strip can be ensured, the effect of collecting current is achieved, and the natural silver paste area combination effect is better.
Drawings
FIG. 1 is a schematic diagram of a back contact cell according to some embodiments of the application;
FIG. 2 is a schematic illustration of an insulating paste printed area of a back contact cell according to some embodiments of the present application;
FIG. 3 is a schematic diagram of a solder paste printed area of a back contact cell according to some embodiments of the present application;
FIG. 4 is a schematic illustration of partial solder tape placement of a back contact cell according to some embodiments of the present application;
FIG. 5 is a schematic overall layout of a back contact cell according to some embodiments of the present application;
FIG. 6 is a schematic cross-sectional view of a photovoltaic module laminate lay-up according to some embodiments of the present application;
fig. 7 is an EL photograph before and after lamination in example 1 of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The application provides a back contact battery welded at low temperature, which is provided with a first main grid line and a second main grid line at intervals along a first direction of the back of a battery piece; the first main grid line and the second main grid line extend along the second direction of the back of the battery piece and have opposite polarities; the first direction and the second direction are intersected with each other on the back surface of the battery piece; the first main grid line and the second main grid are respectively and correspondingly and electrically connected with a first thin grid line and a second thin grid line, and are used for collecting current with corresponding polarity; the first thin grid line and the second thin grid line are mutually arranged at intervals in the second direction in an insulating manner;
pad points are arranged on the first main grid line and the second main grid line; the surfaces of the pad points are provided with low-temperature electric connection layers; the low-temperature electric connection layer is connected and combined with the low-temperature welding strip and is used for fixing the battery piece interconnection welding strip.
The combination of the battery grid line and the welding strip in the back contact photovoltaic module is stable, the good effect of collecting current can be achieved, the problems of warping, micro-hidden cracking and the like of thermal stress on the surface of the battery caused by conventional high-temperature welding are solved, and the service life of the battery piece, the power of the photovoltaic module and the like are also benefited.
Referring to fig. 1, fig. 1 is a schematic diagram of a back contact battery in some embodiments, where 1 is a positive thin gate line, 2 is an edge positive main gate line, 3 is a PAD point (also referred to as PAD point) of an internal positive main gate line, 4 is a negative thin gate line, 5 is an internal negative main gate line, and 6 is a PAD point of an internal negative main gate line. In the embodiment of the application, the positive electrode of the back contact battery is printed by aluminum paste, and the negative electrode is printed by silver paste.
In the embodiment of the application, the edge of the back contact battery piece can be an anode or a cathode depending on the back field doping pattern; the first polarity and the second polarity are represented by first polarity and second polarity regions of opposite polarity, which are spaced apart from each other. The first main grid line is an anode or cathode main grid line, and the polarity of the first main grid line is opposite to that of the second main grid line. The first main grid line and the second main grid line are arranged at intervals along the first direction of the back of the battery piece; and the two extend along the second direction of the back of the battery piece, and the first direction and the second direction are intersected with each other, and can be particularly perpendicularly intersected. In addition, the main gate lines may be divided into an edge main gate and a plurality of internal main gates according to different positions in the first direction.
Taking the first main grid line as an anode main grid line as an example, two adjacent edges of the back surface of the back contact battery are respectively provided with an edge anode main grid line 2, and the edges adjacent to the first direction of the battery piece extend along the second direction; a plurality of internal positive electrode main grid lines and internal negative electrode main grid lines 5 are arranged between the two edge positive electrode main grid lines at intervals.
The edge positive electrode main grid line 2 and the internal positive electrode main grid line are electrically connected with a plurality of positive electrode thin grid lines 1 with two ends extending towards opposite edges, and the internal negative electrode main grid line 5 is connected with a plurality of negative electrode thin grid lines 4 with two ends extending towards opposite edges, preferably vertically connected. The positive thin grid lines 1 and the negative thin grid lines 4 are arranged at intervals and insulated, and the uniformly arranged thin grid lines can further strengthen the collection capability of carriers. Here, the polarities of the above cell grid line structures may be the same or opposite in theory.
In the application, the back edge of the battery is also provided with edge thin grid lines which are opposite to the polarity of the adjacent first thin grid lines or second thin grid lines and are arranged in a second direction in an insulating manner at intervals, and pad points are arranged on the edge thin grid lines. Referring to the upper left corner in fig. 1, 2 is a positive main gate close to the edge, 1 is a positive fine gate extending from the main gate, and the right side of the main gate 2 is a negative main gate 3 and a negative fine gate 4; the left side of the main grid 2 is also provided with a negative thin grid which is interdigitated with the positive thin grid 1 and is not connected with the positive thin grid, the negative thin grid is connected with a bus grid line (the main grid can also be used), and negative pad points are arranged on the negative thin grid at intervals.
According to fig. 1, the main grid lines are divided into positive grid lines and negative grid lines, the width is 5mm, and the number is 5-19 (odd number) main grids. In the thin grid lines, the height of the positive grid line can be 20+/-5 mu m, and the width of the positive grid line is 30+/-5 mu m; the height of the negative electrode grid line can be 5+/-2 mu m, and the width can be 10+/-5 mu m. The lengths are all 8mm, and the length is adjusted according to the interval.
Further, an insulating adhesive layer is arranged at the edge of the tail end of the second thin grid line and near the first main grid line, and inside the tail end of the first thin grid line and near the second main grid line. In a preferred embodiment of the present application, the first thin gate line is an anode thin gate line, and the second thin gate line is a cathode thin gate line; and an insulating adhesive layer is arranged at the position close to the edge positive electrode main grid line at the tail end of the negative electrode thin grid line and the position close to the internal negative electrode main grid line at the tail end of the positive electrode thin grid line, namely the thin grid tail end of the electrode opposite to the main grid near the main grid, so that the area insulation effect is achieved.
As shown in the schematic diagram of fig. 2, the insulating adhesive layer 1 is arranged near the edge positive electrode main grid line and covers the tail end of the negative electrode thin grid line, so that short circuit in the welding strip lapping process can be avoided. The material of the insulating glue layer 1 is further preferably a UV-curable insulating glue, and specifically, the UV-curable insulating glue can be subjected to UV light irradiation after screen printing, and after curing time of 2-3s, the insulating glue layer is cured to form an insulating glue film, for example, an insulating glue layer with a length of 1-3mm and a width of 1mm is formed. In addition, the thickness of the insulating glue printing coating is matched with the height of the grid line, and the thickness of the insulating glue layer is larger than the height of the corresponding covered grid line and can be 40-50 mu m, preferably 45 mu m; the tail end positions of the adjacent first thin grid lines or second thin grid lines are smaller than the edge thin grid pad point, and the difference of the heights of the positive and negative grid lines is met. In contrast, the end of the thin positive gate line is covered near the main negative gate line. The above data are examples and are not limited to this numerical representation.
The PAD points (connection points) on the edge positive electrode main grid line, the internal positive electrode main grid line and the internal negative electrode main grid line in the embodiment of the application are printed with low-temperature electric connection layers, and can be particularly low-temperature solder paste layers. As shown in the schematic diagram of fig. 3, the low-temperature solder paste layer 1 is formed by printing low-temperature solder paste at PAD points on the main grid line, and has the main function of ensuring effective combination of the low-temperature solder strip and the positive and negative main grid lines so as to ensure the current collection capability of the solder strip. Wherein, the material of the low-temperature solder paste layer is a conventional tin-lead-bismuth system, and the melting temperature can be 90-135 ℃, for example, the melting temperature is 130 ℃; the pre-curing of the solder paste of the electrical connection material is preferably ensured after screen printing by passing through a low-temperature oven below 80 ℃ for 2-5s. The pre-curing of the preferred embodiment of the application ensures that the solder paste is not solidified (residual soldering flux) in the process of laying the solder tape, thereby ensuring that the solder tape is primarily adhered on the main grid line; in the subsequent lamination process, the bonding of the low temperature solder strip and the battery main grid can be accomplished by means of the temperature of the laminator.
Fig. 4 is a schematic diagram of partial solder tape placement of a back contact cell in some embodiments, wherein 1 is a flat low temperature solder tape partially bonded to a low temperature solder paste layer, primarily for collecting current and interconnecting cells. After the low Wen Xigao of the embodiment of the application is pre-cured, the flat low-temperature welding strip can be pulled by special pulling equipment and laid on the surface of the battery, and the solder paste in a local area is pre-combined with the welding strip, so that the battery has certain adhesive force. The specification of the exemplified flat low-temperature welding strip is 0.15-0.30 x 0.5-0.9mm (0.15-0.3 mm is the height of the section of the welding strip, and 0.5-0.9mm is the width of the section of the welding strip), and the flat low-temperature welding strip can also be low-temperature welding strips with other specifications; the material of the solar cell is a tin bismuth silver system, the melting point of the welding strip can be 90-135 ℃, and the lamination temperature is generally 150 ℃, so that the solar cell can be effectively combined with low Wen Xigao and a main grid of the battery. The above data are examples and are not limited to this numerical representation.
Fig. 5 is a schematic overall layout of a back contact battery according to some embodiments of the present application, in fig. 5, 1 is a flat low-temperature solder strip, 2 is an insulating adhesive layer, and 3 is a low-temperature solder paste layer on PAD points. According to the embodiment of the application, the low Wen Xigao is printed in the PAD point area, and after pre-curing, the flat low-temperature welding strip is matched, so that the effective combination of the aluminum grid line with weak bonding force and the low-temperature welding strip can be ensured, the effect of collecting current is achieved, the natural silver paste area has better combination effect, and the application is facilitated.
Correspondingly, the application provides a low-temperature welded back contact photovoltaic module, which comprises a laminated piece, wherein the laminated piece comprises a front cover plate, a front adhesive film, a battery array, a back adhesive film and a back cover plate which are sequentially laminated, and the battery array is a plurality of back contact batteries.
Further, the embodiment of the application provides a preparation method of the back contact photovoltaic module, which comprises the following steps:
s1, laying a front adhesive film on a front cover plate;
s2, placing a back contact battery part on the front adhesive film, optionally printing insulating adhesive on an end area, which is near the positive electrode main grid and/or the negative electrode main grid on the back and is not electrically connected with the main grid, of the fine grid, and curing to form an insulating adhesive layer;
s3, printing low-temperature electric connection materials on PAD points of all main grids on the back of the back contact battery part, and performing pre-curing;
s4, laying a low-temperature welding strip on the pre-cured low-temperature electric connection material;
and S5, laying a back adhesive film and a back cover plate on the low-temperature welding strip, and then laminating to obtain the low-temperature welded back contact photovoltaic module.
Referring to fig. 6, fig. 6 is a schematic cross-sectional view of a photovoltaic module laminate layout according to some embodiments of the present application; wherein 1 is a low-temperature solder paste layer printed by PAD points, 2 is a front cover plate, 3 is a front adhesive film, 4 is a back contact battery, 5 is an insulating adhesive layer, 6 is a flat low-temperature welding strip, 7 is a pre-crosslinked adhesive film, and 8 is a back cover plate.
In the embodiment of the application, the front adhesive film is firstly laid (covered) on the front cover plate, the front cover plate can be preferably an ETFE film, and the thickness of the film layer is more than or equal to 0.15mm. The corresponding back cover plate can be transparent glass, so that good mechanical performance and reliability of the back contact photovoltaic module can be guaranteed. The front adhesive film can be a POE film (ethylene-octene copolymer film layer) or an EVA film (ethylene-vinyl acetate copolymer film layer). The photovoltaic module is the same as the conventional 182-72 layout, 182-54 layout and the like, the size is not limited, and the conventional module type is mainly covered; the front cover plate is the front glass, one side of the adhesive film with the welding strip is the adhesive film with low fluidity, and the laminated structure of the assembly is the same as that of a conventional assembly.
In the embodiment of the application, the back contact battery part is placed on the front adhesive film, and the UV curing insulating adhesive is preferably printed on the end area, which is near the positive electrode main grid and/or the negative electrode main grid and is not electrically connected with the main grid, of the back surface of the back contact battery part, and the insulating adhesive layer can be formed by curing the front adhesive film through 2-3s of UV light irradiation, namely, the effect of area insulation is achieved by utilizing the UV curing insulating adhesive layer. The UV-cured insulating adhesive is generally an epoxy resin system insulating adhesive, and a photoinitiator (or photosensitizer) is added into a resin with a special formula, and after absorbing high-intensity ultraviolet light in Ultraviolet (UV) light curing equipment, active free radicals or ionic groups are generated, so that polymerization, crosslinking and grafting reactions are initiated, and the resin (UV paint, ink, adhesive and the like) is converted from a liquid state to a solid state within a few seconds (unequal).
Then, the embodiment of the application prints the low Wen Xigao on the PAD point of each main grid on the back of the back contact battery part, and performs pre-curing. Wherein, the low Wen Xigao is preferably a tin-lead-bismuth system with the melting temperature of 90-135 ℃ and is commercially available; the present application is not particularly limited to the specific kind of the low-temperature electric connection material. The pre-curing temperature is lower than 80 ℃ and the time is 2-5s. Specifically, the solder paste can be pre-cured after screen printing by a low-temperature oven at a temperature lower than 80 ℃ for 2-5 seconds, namely, the solder paste is not completely solidified into a solid film layer, and residual soldering flux still exists. The solder paste is pre-cured to have better viscosity (incomplete curing), and the solder tape is further pre-fixed after being contacted with the solder paste; the strings of cells are then arranged in a row on a film.
After the low Wen Xigao is pre-cured, the embodiment of the application can pull the flat low-temperature welding strip through special traction equipment, lay the flat low-temperature welding strip at the solder paste position on the surface of the battery along the positive and negative electrode main grid lines on the back, and can pre-press the flat low-temperature welding strip through a pressing tool, so that the contact area of the flat low-temperature welding strip and the solder paste is increased; the pre-combination fixation can also be carried out through heating and drying equipment such as an oven/tunnel furnace and the like. In the embodiment of the application, the specification of the flat low-temperature welding strip is 0.15-0.30 x 0.5-0.9mm, but not limited to the specification; the material uses a tin bismuth silver system, and the melting point of the welding strip is generally 90-135 ℃. The actual melting point of the low-temperature welding strip is 130 ℃ plus or minus 5 at present, the main factor influencing the melting point is the Bi content, the melting point is reduced along with the increase of the Bi content, but the reliability of the component end is at risk if the Bi content is too low.
And then, laying a pre-crosslinked adhesive film and a back cover plate of the back package in the preferred embodiment of the application, and entering laminating equipment for lamination and curing to obtain the back contact photovoltaic module welded at low temperature. The pre-crosslinked adhesive film laid on the back surface is a local surface low-fluidity adhesive film, so that the welding strip deviation caused by lamination can be avoided, and the pre-crosslinked surface, namely the low-fluidity surface, faces the battery.
Preferably, the back adhesive film is a PVB (polyvinyl butyral) film or a low-fluidity pre-crosslinked adhesive film, but is not limited thereto; the low flow adhesive films are better, such as PVB, pre-crosslinked adhesive films, etc. The low flowability is compared with conventional adhesive films, for example flowability EVA > POE > pre-crosslinked > PVB, and the degree of crosslinking of the laminate is in the interval of 70-90%. The laminating temperature is preferably 140-160 ℃, more preferably 150 ℃, so that the low-temperature welding strip can be effectively combined with the low Wen Xigao and the main grid of the battery, and the combination capability of the low-temperature welding strip and the collecting current of the positive and negative electrode main grid lines is ensured. According to the embodiment of the application, the insulating adhesive is printed on the edge, and the low-temperature welding of the back pre-crosslinked adhesive film is matched, so that the offset of the back low-temperature welding belt is very weak, the grid lines with opposite polarities near the battery main grid are not in short circuit with each other at risk, and the use of the battery piece and the component is facilitated.
In order to better understand the technical content of the present application, the following provides specific examples to further illustrate the present application. In the following examples, all the raw materials used are commercially available.
Example 1
Step one: the back of the battery is printed with positive electrode by adopting aluminum paste, and the negative electrode is printed with silver paste, and the structure is shown in figure 1;
step two: printing insulating glue in the area with opposite polarity near the battery main grid, and curing; the material of the insulating adhesive adopts UV curing insulating adhesive (UV curing epoxy resin system), and UV light irradiation is carried out for 2-3s after the screen printing of the insulating adhesive, so that an insulating adhesive film is formed by solidification, the length is about 2mm, the width is 1mm, the thickness of a printing coating is 45 mu m, and the difference of heights of positive and negative grid lines is satisfied. In contrast, the end of the thin positive gate line is covered near the main negative gate line. The widths of the positive electrode grid lines and the negative electrode grid lines of the main grids are 5mm, and the number of the positive electrode grid lines and the negative electrode grid lines of the main grids is 5-19 (odd number) main grids. In the thin grid lines, the height of the positive grid line can be 20+/-5 mu m, and the width of the positive grid line is 30+/-5 mu m; the height of the negative electrode grid line can be 5+/-2 mu m, and the width can be 10+/-5 mu m. The length is 8mm.
Step three: screen printing a low Wen Xigao on the PAD point of the main grid of the battery, and performing pre-curing; wherein the solder paste is a conventional tin-lead-bismuth system and has a melting temperature of 130 ℃ and is passed through a low temperature oven at 75 ℃ for about 3s after screen printing.
Step four: a front adhesive film (POE film) is laid on the front cover plate;
step five: laying a flat low-temperature welding strip along the positive and negative electrode main grid lines on the back, pre-pressing by a pressing tool, and pre-fixing by an oven; the specification of the low-temperature welding strip is 0.15-0.30 mm 0.5-0.9mm, the material of the low-temperature welding strip adopts a tin-bismuth-silver system, and the melting point of the welding strip is about 130 ℃ (125-135 ℃), so that the battery string is formed.
Step six: and arranging the strings on the front adhesive film, and welding the bus bars.
Step seven: laying a back pre-crosslinked adhesive film (the crosslinking degree is 80% -90%) and a back cover plate, and entering a laminating machine for lamination and curing at 150 ℃; the structure of the laminated arrangement of the assembly is shown in figure 6.
Step eight: the final assembly of the assembly (framing, junction box, etc.) is completed.
EL test results referring to fig. 7, the defect of the battery cell is mainly detected conventionally by using the semiconductor electroluminescence principle. In the EL shooting picture, according to comparison before and after lamination, the embodiment of the application can ensure effective combination (no cold joint) of the aluminum grid line with weak bonding force and the low-temperature welding strip, achieves the effect of collecting current, and has better natural silver paste area combination effect.
Moreover, the offset of the back welding strip is very weak, and the grid line interconnection with opposite polarity near the battery main grid is not in short circuit.
In addition, other photovoltaic modules of different specifications are identical to the effect of example 1, and do not conflict.
As can be seen from the above embodiments, the present application designs a novel low-temperature welded back contact battery and a photovoltaic module thereof, wherein insulating glue is printed on a thin grid near a main grid and opposite to the main grid, so as to achieve an area insulation effect; by printing a low temperature electrical connection layer (e.g., low Wen Xigao) at PAD points on the back side of the back contact battery component; then lay flat low-temperature welding strip along positive and negative electrode main grid line of the back, can also increase the three area of contact through the precompaction of the clamp; finally, pre-fixing can be carried out through heating and drying equipment such as an oven/tunnel furnace, a pre-crosslinked adhesive film/PVB and other local surface low-fluidity adhesive films are preferably laid on the back surface, and the adhesive film enters a laminating machine for curing, so that the binding force between the low-temperature welding belt and the collecting current of the positive and negative electrode main grid lines is ensured. According to the embodiment of the application, the low Wen Xigao is printed in the PAD point area, and the low-temperature welding strip is matched after pre-curing, so that the aluminum grid line with weak bonding force and the low-temperature welding strip can be effectively combined, the effect of collecting current is achieved, and the natural silver paste area is better combined, so that a combined stable back contact photovoltaic module product is obtained, and the application is facilitated.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The low-temperature welded back contact battery is characterized in that a first main grid line and a second main grid line are arranged at intervals along a first direction of the back surface of a battery piece; the first main grid line and the second main grid line extend along the second direction of the back of the battery piece and have opposite polarities; the first direction and the second direction are intersected with each other on the back surface of the battery piece;
the first main grid line and the second main grid are respectively and correspondingly and electrically connected with a first thin grid line and a second thin grid line, and are used for collecting current with corresponding polarity; the first thin grid line and the second thin grid line are mutually arranged at intervals in the second direction in an insulating manner;
pad points are arranged on the first main grid line and the second main grid line; the surfaces of the pad points are provided with low-temperature electric connection layers; the low-temperature electric connection layer is connected and combined with the low-temperature welding strip and is used for fixing the battery piece interconnection welding strip.
2. The back contact battery of claim 1, wherein the low temperature electrical connection layer has a melting temperature of 90 ℃ to 135 ℃ and the low temperature solder strip has a melting point; the low-temperature electric connection layer is preferably a low-temperature solder paste layer; the low-temperature welding strip is preferably a tin bismuth silver system with the melting point of 90-135 ℃.
3. The back contact battery of claim 1, wherein an insulating glue layer is provided at an edge of the second thin gate line end and in the vicinity of the first main gate line and/or inside the first thin gate line end and in the vicinity of the second main gate line; each insulating adhesive layer is preferably a UV curing insulating adhesive layer, and the thickness of the insulating adhesive layer is larger than the height of the corresponding covered grid line.
4. A back contact battery according to claim 3, wherein the back side edge of the battery further has edge fine grid lines which are opposite in polarity to adjacent first fine grid lines or second fine grid lines and are arranged at intervals in the second direction, pad points are arranged on the edge fine grid lines, and the height of the tail end positions of the adjacent first fine grid lines or second fine grid lines is smaller than the height of the pad points of the edge fine grid lines.
5. The back-contact battery of any of claims 1-4, wherein the positive electrode of the back-contact battery is an aluminum-containing positive electrode and the negative electrode is a silver-containing negative electrode.
6. A low temperature welded back contact photovoltaic module comprising a laminate, wherein the laminate comprises a front cover sheet, a front adhesive film, a cell array, a back adhesive film and a back cover sheet laminated in sequence, wherein the cell array is a plurality of back contact cells according to any one of claims 1-5.
7. The method for manufacturing a back contact photovoltaic module according to claim 6, comprising the steps of:
s1, laying a front adhesive film on a front cover plate;
s2, placing a back contact battery part on the front adhesive film, optionally printing insulating adhesive on an end area, which is near the positive electrode main grid and/or the negative electrode main grid on the back and is not electrically connected with the main grid, of the fine grid, and curing to form an insulating adhesive layer;
s3, printing low-temperature electric connection materials on PAD points of all main grids on the back of the back contact battery part, and performing pre-curing;
s4, laying a low-temperature welding strip on the pre-cured low-temperature electric connection material;
and S5, laying a back adhesive film and a back cover plate on the low-temperature welding strip, and then laminating to obtain the low-temperature welded back contact photovoltaic module.
8. The method according to claim 7, wherein the step S2 is performed by printing a UV-curable insulating paste, and curing the paste by irradiation with UV light for 2-3S.
9. The preparation method according to claim 7, wherein the low-temperature electrical connection material in the step S3 is a tin-lead-bismuth system with a melting temperature of 90-135 ℃, and the pre-curing temperature is lower than 80 ℃ for 2-5S; the low-temperature welding strip in the step S4 is a tin-bismuth-silver system, and the melting point is 90-135 ℃.
10. The method according to any one of claims 7 to 9, wherein the back side adhesive film in step S5 is a PVB film for pre-fixing a low temperature solder tape or a low fluidity pre-crosslinked adhesive film, and the laminating temperature is 140 ℃ to 160 ℃.
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