CN116960231A - Preparation method of high-light-transmittance double-sided TOPCON battery - Google Patents
Preparation method of high-light-transmittance double-sided TOPCON battery Download PDFInfo
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- CN116960231A CN116960231A CN202311221632.6A CN202311221632A CN116960231A CN 116960231 A CN116960231 A CN 116960231A CN 202311221632 A CN202311221632 A CN 202311221632A CN 116960231 A CN116960231 A CN 116960231A
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- 238000002834 transmittance Methods 0.000 title claims abstract description 10
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- 239000010703 silicon Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000002002 slurry Substances 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- 238000007639 printing Methods 0.000 claims abstract description 4
- 230000005641 tunneling Effects 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 11
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 238000001228 spectrum Methods 0.000 abstract description 4
- 230000008033 biological extinction Effects 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000003513 alkali Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a preparation method of a high-light-transmittance double-sided TOPCON battery, which comprises the steps of firstly printing carbon-doped silicon slurry on two sides of a silicon substrate, and solidifying the slurry; then, through the modes of boron diffusion and phosphorus diffusion, carbon doped POLY silicon is formed on two sides of the silicon substrate; the arrangement of the carbon doped POLY silicon increases the forbidden bandwidth, reduces the extinction coefficient, reduces the parasitic absorption of light spectrum, improves the current, realizes the double-sided passivation of the TOPCon battery, and simultaneously avoids the direct contact between the front electrode and the silicon substrate.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a high-light-transmittance double-sided TOPCON cell.
Background
At present, the TOPCO battery only has a passivation contact structure formed by silicon dioxide and doped polysilicon on the back surface, and only has aluminum oxide on the front surface, so that when the burn-through type slurry is used, the grid line is still in direct contact with the silicon substrate, and double-sided passivation of the TOPCO battery cannot be realized. Therefore, the passivation contact structure is also required for the front surface of the battery. At present, the front surface of the TOPCon double-sided passivation battery adopts doped polysilicon to realize double-sided passivation, but the forbidden bandwidth (1.1 ev-1.7 ev) of the polysilicon is smaller, the optical light transmittance is poorer, the parasitic absorption is serious, and thus the efficiency loss is caused.
Disclosure of Invention
In order to solve the technical problems in the background technology, the invention discloses a preparation method of a high-light-transmittance double-sided TOPCO battery.
The invention provides a preparation method of a high-light-transmittance double-sided TOPCO battery, which comprises the following steps of:
s1, double-sided texturing of a silicon substrate;
s2, polishing the back surface of the silicon substrate;
s3, depositing a tunneling oxide layer on the two sides of the silicon substrate;
s4, printing carbon-doped silicon slurry on the two sides of the silicon substrate, and solidifying the slurry;
s5, performing boron diffusion on the front surface of the silicon substrate, and crystallizing carbon-doped silicon slurry on the front surface of the silicon substrate into carbon-doped POLY silicon;
s6, removing the BSG layer on the back surface of the silicon substrate through acid washing;
s7, performing phosphorus diffusion on the back surface of the silicon substrate, and crystallizing carbon-doped silicon slurry on the back surface of the silicon substrate into carbon-doped POLY silicon;
s8, removing BSG on the front side and PSG on the back side of the silicon substrate through acid washing;
s9, depositing a silicon nitride film on the two sides of the silicon substrate;
and S10, screen printing is carried out on the front side and the back side of the silicon substrate, and the double-sided TOPCO battery is manufactured.
The arrangement of the carbon doped POLY silicon increases the forbidden bandwidth, reduces the extinction coefficient, reduces the parasitic absorption of light spectrum, improves the current, realizes the double-sided passivation of the TOPCon battery, and simultaneously avoids the direct contact between the front electrode and the silicon substrate.
If the carbon doping content is too low, the gain of the forbidden band width of POLY silicon is insufficient; if the carbon doping content is too high, the crystal structure of the crystal lattice is destroyed, the contact resistance is influenced, and the filling factor is reduced, based on the fact that the following further design is carried out: the carbon doping content in the silicon slurry is 3% -5%.
Detailed Description
Embodiment one: the invention relates to a preparation method of a high-light-transmittance double-sided TOPCO battery, which comprises the following steps of:
s1, selecting an N-type monocrystalline silicon wafer with resistivity of 0.8-1.5ohm cm, thickness of 150nm, size of 182mm multiplied by 182mm and minority carrier lifetime of more than 20 ms;
double-sided texturing is carried out on the front surface and the back surface of the silicon substrate; first in KOH and H 2 O 2 Removing a damaged layer on the surface of a silicon wafer, and then texturing in NaOH solution to form pyramid texture on the surface of the silicon wafer, wherein the size of the pyramid texture is 5 mu m, and the reflectivity of the front side and the back side is 8%; the reflectivity is set for reducing reflected light and improving the utilization rate of the battery to light;
s2, polishing the back surface of the silicon substrate by adopting a chained alkali etching mode to ensure that the reflectivity of the silicon substrate is 40%; the arrangement of the reflectivity of the back surface is used for improving internal reflection, improving the utilization rate of light, reducing the contact resistance between the grid line and the silicon matrix and improving the filling factor; the alkali liquor is NaOH solution, the concentration is 5%, and the temperature is 65 ℃; meanwhile, water is dripped on the front surface of the silicon substrate to form a water film, so that the front surface of the silicon substrate is protected, and the front surface is prevented from being polished;
s3, sequentially depositing and preparing a tunneling oxide layer on the two sides of the silicon wafer by adopting an LPCVD process, wherein the thickness of the tunneling oxide layer is 1.3nm; the thickness of the tunneling oxide layer ensures not only passivation effect but also tunneling stability of carriers;
s4, printing carbon-doped silicon slurry on the two sides of the silicon substrate, wherein the carbon doping content in the silicon slurry is 3%, and the thickness of the silicon slurry is 130nm; subsequently curing the slurry at a curing temperature of 300 ℃;
s5, performing boron diffusion on the front surface of the silicon substrate, wherein the temperature is 1045 ℃, and the doping concentration after diffusion is 1E19atoms/cm 3 Junction depth is 1200nm; the arrangement avoids excessively low doping concentration, increases the contact resistance between the grid line and the silicon substrate, and reduces ohmic contact; the excessive doping concentration is avoided, the recombination is increased, and the minority carrier lifetime is reduced; the temperature in the boron diffusion enables the carbon-doped silicon slurry on the front surface of the silicon substrate to crystallize into carbon-doped POLY silicon;
s6, removing the BSG layer on the back surface of the silicon substrate by adopting chain HF acid, wherein the HF concentration is 40%;
s7, performing phosphorus diffusion on the back surface of the silicon substrate, wherein the temperature is 850 ℃, and the doping concentration after diffusion is 3E20atoms/cm 3 Junction depth 120nm; the arrangement avoids too low doping concentration and reduces the passivation effect of the polysilicon; the excessive doping concentration is avoided, the quantity of phosphorus atoms diffused into the tunneling oxide layer is excessive, and the tunneling effect is destroyed; the temperature in the phosphorus diffusion enables the carbon-doped silicon slurry on the back surface of the silicon substrate to crystallize into carbon-doped POLY silicon;
s8, removing BSG on the front side and PSG on the back side of the silicon substrate by adopting chain HF acid, wherein the HF concentration is 40%;
s9, depositing a silicon nitride film on the two sides of the silicon substrate by PECVD equipment, wherein the thickness is 80nm; by the arrangement, the anti-reflection and passivation effects are ensured, the color of the silicon nitride is light blue, and the absorptivity of the silicon matrix to the spectrum is improved;
and S10, screen printing is carried out on the front side and the back side of the silicon substrate, and the double-sided TOPCO battery is manufactured.
The arrangement of the carbon doped POLY silicon increases the forbidden bandwidth, reduces the extinction coefficient, reduces the parasitic absorption of light spectrum, improves the current, realizes the double-sided passivation of the TOPCon battery, and simultaneously avoids the direct contact between the front electrode and the silicon substrate.
Embodiment two: the difference from the first embodiment is that: the carbon doping content in the silicon paste was 5%.
Comparative example one: the difference from the first embodiment is that: the carbon doping content in the silicon paste was 1%.
Comparative example two: s1, double-sided texturing is carried out on a silicon substrate, the pyramid size is 5 mu m, and the reflectivity is 8%;
s2, polishing the back surface of the silicon substrate by using a chained alkali etching mode, wherein the reflectivity after alkali polishing is 40%, and the size of the tower foundation is 10 mu m;
s3, depositing a tunneling oxide layer with the thickness of 1.3nm and an amorphous silicon layer with the thickness of 130nm on the two sides of the silicon wafer by using LPCVD equipment;
s4, maintaining the temperature at 1045 ℃, performing boron diffusion on the front surface of the silicon substrate, and simultaneously completing crystallization of front surface amorphous silicon, wherein the temperature is 1045 ℃ and the doping concentration is1E19atoms/cm 3 The junction depth is 1200nm, and the boron source is BCL 3；
S5, removing the BSG layer on the back surface of the silicon substrate by adopting chain HF acid, wherein the HF concentration is 40%;
s6, maintaining the temperature at 850 ℃, and introducing POCL 3 The doping and crystallization of the amorphous silicon layer are realized by diffusion, and the doping concentration of the polysilicon after diffusion is 3E20atoms/cm 3 Junction depth is 120nm;
s7, removing BSG on the front side and PSG on the back side of the front side silicon substrate by adopting chain HF acid, wherein the HF concentration is 40%;
s8, depositing a silicon nitride film with the thickness of 80nm on the two sides of the silicon substrate by PECVD equipment;
and S9, screen printing is carried out on the front side and the back side of the silicon substrate, and the double-sided TOPCO battery is manufactured.
| ITEM | Voc（mV） | Jsc(mA/ cm2) | FF(%) | EFF(%) |
| Example 1 | 722.8 | 41.77 | 83.97 | 25.35 |
| Example two | 721.6 | 41.79 | 83.80 | 25.27 |
| Comparative example one | 720.3 | 41.72 | 83.88 | 25.21 |
| Comparative example two | 720.6 | 41.71 | 83.85 | 25.20 |
Note that: voc represents the open circuit voltage, jsc represents the current density, FF represents the fill factor, and EFF represents the conversion efficiency.
As can be seen from the experimental results of the table, the efficiency of the double-sided TOPCon battery prepared by using the silicon slurry with 3% of carbon doping content is highest in the first embodiment, and compared with the TOPCon battery prepared by using the polysilicon on both sides in the second embodiment, the electrical performance of the first embodiment is improved, wherein the current density is most remarkable, and the filling factor is reduced due to the fact that the carbon doped POLY silicon layer crystallized at high temperature by using the carbon doped silicon slurry has a larger forbidden bandwidth, the parasitic absorption of short-wave light is reduced, so that the conversion efficiency is improved. The double-sided TOPCon battery prepared by the silicon slurry with the carbon doping content of 1% in the first comparative example has the advantages that the improvement of the forbidden bandwidth after crystallization in the first comparative example is less due to the lower carbon doping content in the first comparative example, so that the current density of the first comparative example is basically consistent with that of the second comparative example, the efficiency of the first comparative example is basically consistent with that of the second comparative example, the conversion efficiency of the double-sided TOPCon battery prepared by the silicon slurry with the carbon doping content of 3% is highest as shown in experimental results, and compared with the second comparative example, the double-sided TOPCon battery has obvious current density improvement, better contact resistance and no reduction of filling factor.
With the above-described preferred embodiments according to the present invention as an illustration, the above-described descriptions can be used by persons skilled in the relevant art to make various changes and modifications without departing from the scope of the technical idea of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (2)
1. The preparation method of the high-light-transmittance double-sided TOPCO battery is characterized by comprising the following steps of:
s1, double-sided texturing of a silicon substrate;
s2, polishing the back surface of the silicon substrate;
s3, depositing a tunneling oxide layer on the two sides of the silicon substrate;
s4, printing carbon-doped silicon slurry on the two sides of the silicon substrate, and solidifying the slurry;
s5, performing boron diffusion on the front surface of the silicon substrate, and crystallizing carbon-doped silicon slurry on the front surface of the silicon substrate into carbon-doped POLY silicon;
s6, removing the BSG layer on the back surface of the silicon substrate through acid washing;
s7, performing phosphorus diffusion on the back surface of the silicon substrate, and crystallizing carbon-doped silicon slurry on the back surface of the silicon substrate into carbon-doped POLY silicon;
s8, removing BSG on the front side and PSG on the back side of the silicon substrate through acid washing;
s9, depositing a silicon nitride film on the two sides of the silicon substrate;
and S10, screen printing is carried out on the front side and the back side of the silicon substrate, and the double-sided TOPCO battery is manufactured.
2. The method for preparing the high-light-transmittance double-sided TOPCon battery according to claim 1, which is characterized in that: the carbon doping content in the silicon slurry is 3% -5%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311221632.6A CN116960231A (en) | 2023-09-21 | 2023-09-21 | Preparation method of high-light-transmittance double-sided TOPCON battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311221632.6A CN116960231A (en) | 2023-09-21 | 2023-09-21 | Preparation method of high-light-transmittance double-sided TOPCON battery |
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| CN116960231A true CN116960231A (en) | 2023-10-27 |
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|---|---|---|---|---|
| US20150349180A1 (en) * | 2014-05-30 | 2015-12-03 | David D. Smith | Relative dopant concentration levels in solar cells |
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| CN115101627A (en) * | 2022-07-08 | 2022-09-23 | 三一集团有限公司 | Double-sided passivation contact solar cell and preparation method thereof |
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| CN116705915A (en) * | 2023-08-04 | 2023-09-05 | 常州亿晶光电科技有限公司 | Preparation method of novel double-sided TOPCON battery |
| CN116705881A (en) * | 2023-07-03 | 2023-09-05 | 滁州捷泰新能源科技有限公司 | Multi-doped polycrystalline silicon layer TOPCON battery structure and preparation method thereof |
| CN116741892A (en) * | 2023-08-16 | 2023-09-12 | 常州亿晶光电科技有限公司 | Preparation method of boron doped selective emitter battery |
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2023
- 2023-09-21 CN CN202311221632.6A patent/CN116960231A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150349180A1 (en) * | 2014-05-30 | 2015-12-03 | David D. Smith | Relative dopant concentration levels in solar cells |
| CN114050190A (en) * | 2021-11-19 | 2022-02-15 | 常州时创能源股份有限公司 | Double-sided passivated contact battery and preparation method thereof |
| CN115020507A (en) * | 2022-06-15 | 2022-09-06 | 英利能源发展有限公司 | Selectively passivated contact battery and preparation method thereof |
| CN115101627A (en) * | 2022-07-08 | 2022-09-23 | 三一集团有限公司 | Double-sided passivation contact solar cell and preparation method thereof |
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