CN116953850A - Lithium niobate thin film waveguide device and preparation method thereof - Google Patents
Lithium niobate thin film waveguide device and preparation method thereof Download PDFInfo
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- CN116953850A CN116953850A CN202311203319.XA CN202311203319A CN116953850A CN 116953850 A CN116953850 A CN 116953850A CN 202311203319 A CN202311203319 A CN 202311203319A CN 116953850 A CN116953850 A CN 116953850A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 239000010409 thin film Substances 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000010894 electron beam technology Methods 0.000 claims abstract description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 238000011161 development Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 6
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims abstract description 6
- 239000011651 chromium Substances 0.000 claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 230000018044 dehydration Effects 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 3
- 238000004891 communication Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The application is suitable for the technical field of micro-nano processing of optical communication devices, and particularly relates to a lithium niobate thin film waveguide device and a preparation method thereof. The method comprises the following steps: providing a lithium niobate thin film wafer; coating electron beam photoresist on the lithium niobate thin film wafer, wherein the electron beam photoresist comprises positive photoresist; carrying out electron beam exposure, development, coating and stripping on a lithium niobate film wafer coated with electron beam photoresist to obtain a mark and a waveguide structure hard mask; the coating process comprises metal plating, wherein the marks and the waveguide structure hard mask are all made of metal materials; after the marks are protected, a waveguide structure hard mask is utilized, the lithium niobate thin film is etched through an etching process, and the lithium niobate thin film waveguide structure with the marks is obtained after cleaning; and obtaining the lithium niobate thin film waveguide device through the lithium niobate thin film waveguide structure with the marks. The application improves the resolution and the overlay accuracy and reduces the overlay error.
Description
Technical Field
The application is suitable for the technical field of micro-nano processing of optical communication devices, and particularly relates to a lithium niobate thin film waveguide device and a preparation method thereof.
Background
Lithium niobate (LiNbO) in the 60 s of the 20 th century 3 LN) is one of the most versatile and attractive photonic materials due to its excellent electrical, nonlinear and acousto-optic properties, its wide transparent window and relatively high refractive index. LN, while potentially enormous, generally lags behind other integrated photonic platforms due to the great difficulty in material integration and processing.
With the advent, development, commercialization, and breakthrough of manufacturing technology of lithium niobate single crystal thin film (LNOI), an ultralow-loss, high-refractive-index-contrast LN waveguide has now been realized. Over the past few years, a complete set of integrated optical components have been developed on the LNOI platform, such as: compact and ultra-high performance modulators, broadband frequency comb sources, frequency conversion devices, photon pair sources, and the like. The platform may carry a wide variety of devices including various optical and optical microcavities, tunable filters, electro-optic modulators, acousto-optic modulators, microwave-optical transducers, nonlinear frequency converters, frequency combs, non-classical light sources, detectors, quantum memories, and the like. With such a rich component tool, the LNOI platform is hopefully a material platform for multifunctional, high performance integrated optical circuits that enable classical and quantum applications.
In order to obtain a measurement error, a mark needs to be overlaid on a wafer, and an expert points out that a two-step overlay method is needed for manufacturing an electro-optic modulator prepared by EBL high-precision alignment by utilizing an LNOI platform: the mark is firstly exposed, then the waveguide is manufactured, and expensive HSQ electron beam exposure glue is needed, so that the process is complicated and the price is high. Although mark and waveguide simultaneous one-step alignment schemes have been proposed in the prior art, for example: the application publication No. CN 113985526A discloses a preparation method of lithium niobate thin film waveguide micro-rings based on overlay, but the method adopts an ultraviolet lithography mode, so that the prepared lithium niobate thin film waveguide has uneven line width, large side wall roughness, large scattering effect and high loss, and is not suitable for preparing the lithium niobate thin film waveguide with the thickness of less than 1000 nm.
Meanwhile, a technical scheme of one-step overlay based on electron beam lithography has been proposed, for example: the application publication number CN 111564363A discloses a method for preparing an overlay mark by electron beam lithography based on HSQ, which comprises the following steps: after spin coating the HSQ photoresist on the wafer, pre-baking is performed and then electron beam exposure is performed. The characteristic that the HSQ is negative photoresist is utilized to draw a mark exposure layout, a coordinate system established by the exposure layout is used for layout alignment, and the process steps are reduced, so that the alignment mark can be prepared by using the negative photoresist HSQ. Although the method can also realize one-step alignment for preparing the lithium niobate thin film waveguide device, the HSQ electron beam exposure glue has high price (20 ten thousand yuan/L), the manufacturing cost is too high, the HSQ glue is adopted for exposure, the developed mark has poor conductivity and poor contrast based on an electron beam exposure system, and the resolution ratio and the error are low during alignment.
Disclosure of Invention
In view of the above, the embodiment of the application provides a lithium niobate thin film waveguide device and a preparation method thereof, so as to solve the problems of low alignment resolution and large error in the preparation of the existing lithium niobate thin film waveguide device.
The application provides a preparation method of a lithium niobate thin film waveguide device, which comprises the following steps:
providing a lithium niobate thin film wafer;
coating electron beam photoresist on a lithium niobate thin film wafer, wherein the electron beam photoresist comprises positive photoresist;
carrying out electron beam exposure, development, coating and stripping on a lithium niobate film wafer coated with electron beam photoresist to obtain a mark and a waveguide structure hard mask; the coating process comprises metal plating, wherein the marks and the waveguide structure hard mask are all made of metal materials;
after the mark protection treatment, etching the lithium niobate thin film by using a waveguide structure hard mask through an etching process, and cleaning to obtain a lithium niobate thin film waveguide structure with a mark;
and obtaining the lithium niobate thin film waveguide device through the lithium niobate thin film waveguide structure with the marks.
In addition, the application also provides a lithium niobate thin film waveguide device, which is prepared according to the preparation method of the lithium niobate thin film waveguide device.
Compared with the prior art, the lithium niobate thin film waveguide device and the preparation method thereof have the beneficial effects that: aiming at the thinner lithium niobate film, the application adopts the technology of one-time overlay of the mark and the mask under the electron beam exposure technology, thereby improving the resolution and the overlay accuracy, reducing the overlay error and greatly reducing the process steps of the one-step overlay process.
In the lithium niobate thin film waveguide device and the preparation method thereof, the step of dehydrating and baking the lithium niobate thin film wafer is further included before the electron beam photoresist is coated on the lithium niobate thin film wafer.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the steps of baking, coating the conductive adhesive and baking are sequentially carried out after the electron beam photoresist is coated on the lithium niobate thin film wafer.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the electron beam photoresist is coated on the lithium niobate thin film wafer in a rotating mode.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the thickness of the lithium niobate thin film in the lithium niobate thin film wafer is 300-1200nm.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the waveguide structure hard mask comprises a straight waveguide, a micro-ring, a Y waveguide, an S waveguide, an MMI and/or a PBS waveguide structure.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the metal material plated in the plating process is chromium.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the thickness of chromium is more than 150nm.
Further, in the lithium niobate thin film waveguide device and the preparation method thereof, the electron beam photoresist comprises PMMA.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a process flow diagram of a method for fabricating a lithium niobate thin film waveguide device of the present application;
FIG. 2 is a flow chart of a method of fabricating a lithium niobate thin film waveguide device of the present application;
FIG. 3 is a graph showing the effect of an optical microscope after PMMA exposure development according to the present application;
FIG. 4 is a graph showing the effect of an optical microscope after cleaning a chromium metal Cr mask according to the present application;
FIG. 5a is a graph of the morphology of a waveguide of the present application after PMMA exposure, development, and metal chromium Cr mask cleaning;
FIG. 5b is a prior art waveguide topography after HSQ (FOX 16) exposure, development, and cleaning of a chromium metal Cr mask;
FIG. 6a is a graph of the topography of the upper surface of a waveguide of the present application after PMMA exposure, development, and cleaning with a chromium metal Cr mask;
FIG. 6b is a graph of the topography of the top surface of a waveguide after HSQ (FOX 16) exposure, development, and cleaning of a chromium metal Cr mask in the prior art;
FIG. 7a is a graph of the sidewall topography of a waveguide of the present application after PMMA exposure, development, and cleaning with a chromium metal Cr mask;
FIG. 7b is a prior art graph of waveguide sidewall topography after HSQ (FOX 16) exposure, development, and cleaning of a chromium metal Cr mask;
in the figure, 1, silicon; 2. silicon dioxide; 3. a lithium niobate thin film; 4. electron beam photoresist; 5. conducting resin; 6. marking; 7. a waveguide structure hard mask; 8. a protective adhesive; 9. and (3) metal gold.
Detailed Description
As used in the present description and the appended claims, the term "if" may be interpreted in context as "when … …" or "upon" or "in response to a determination" or "in response to detection. Similarly, the phrase "if a determination" or "if a [ described condition or event ] is detected" may be interpreted in the context of meaning "upon determination" or "in response to determination" or "upon detection of a [ described condition or event ]" or "in response to detection of a [ described condition or event ]".
Furthermore, the terms "first," "second," "third," and the like in the description of the present specification and in the appended claims, are used for distinguishing between descriptions and not necessarily for indicating or implying a relative importance.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
It should be understood that the sequence numbers of the steps in the following embodiments do not mean the order of execution, and the execution order of the processes should be determined by the functions and the internal logic, and should not be construed as limiting the implementation process of the embodiments of the present application.
In order to illustrate the technical scheme of the application, the following description is made by specific examples.
The embodiment provides a preparation method of a lithium niobate thin film waveguide device, as shown in fig. 1 and 2, comprising the following steps:
s101, providing a lithium niobate thin film wafer, and baking the lithium niobate thin film wafer.
In this step, as shown in FIG. 1, the lithium niobate thin film wafer comprises silicon 1 (Si), silicon dioxide 2 (SiO 2 ) And a lithium niobate thin film 3, wherein the thickness of the lithium niobate thin film 3 ranges from 300 nm to 1200nm, and in this embodiment, the thickness of the lithium niobate thin film 3 is 600nm, and the lithium niobate thin film wafer is an X-cut 600nm lithium niobate thin film wafer.
The specific baking step is that the X-cut 600nm lithium niobate thin film wafer is placed on a hot plate at 150 ℃ for dehydration baking for 2min.
S102, coating an electron beam photoresist 4 on the lithium niobate thin film wafer, and baking.
In this step, the electron beam photoresist 4 coated on the lithium niobate thin film wafer includes positive photoresist, such as PMMA, and the electron beam photoresist 4 has high resolution, large contrast, easy stripping, and low cost.
The manner of coating the electron beam photoresist 4 on the lithium niobate thin film wafer is a rotation manner, in this embodiment, the rotation speed is 3000r/min, and in order to enhance the stability and strength of the electron beam photoresist 4, the electron beam photoresist 4 is baked on a hot plate at 150 ℃ for 5min after being coated.
The application mode of the electron beam photoresist can be replaced by other mature application modes in the prior art, and the application is not limited to the application mode.
S103, coating conductive adhesive 5, and baking.
In this step, the conductive adhesive 5 is also applied in a rotating manner, and baked for 1.5min on a hot plate at 80 ℃ after the application.
S104, electron Exposure (EBL) and development process.
In this step, MIBK solution was used for development, and a graph of the effect of an optical microscope after exposure development of specific PMMA is shown in fig. 3.
S105, a film coating and stripping (lift off) process is carried out, and a mark (mark) 6 and a waveguide structure hard mask 7 are obtained.
In this step, the film is coated by electron beam evaporation technology, and the coating is metal, and the mark 6 and the waveguide hard mask 7 are made of metal materials, for example: the metal chromium Cr, cr and lithium niobate are preferably selected because of their high selectivity ratio, in this embodiment, the thickness of the metal chromium is greater than 150nm, NMP solution is selected in the stripping process, and of course, other materials with the same function can be selected for the metal plating material, and the application is not limited.
The waveguide structure hard mask 7 here comprises different waveguide structures, including in particular straight waveguides, micro-rings, Y-waveguides, S-waveguides, MMI-S-waveguides, and/or PBS-waveguide structures.
S106, performing gluing protection treatment on the mark 6, and smearing protection glue 8.
And S107, etching the lithium niobate thin film 3 by using the waveguide structure hard mask 7 through an etching process.
In this embodiment, the lithium niobate thin film 3 is etched by ICP (inductively coupled plasma) using the waveguide structure hard mask 7.
S108, cleaning to obtain the lithium niobate thin film waveguide structure with the mark 6.
In this step, the hard mask 7 of the waveguide structure is etched away with a metal etching solution, the waveguide structure is cleaned with RCA cleaning solution, and the resist 8 of the mark 6 is cleaned with NMP solution. The optical microscope effect graph of the chromium metal Cr mask after corrosion is shown in FIG. 4.
S109, obtaining the lithium niobate thin film waveguide device through the lithium niobate thin film waveguide structure with the mark 6.
The step is a subsequent process for preparing the lithium niobate thin film waveguide device, and the preparation is required according to the specific functional action of the lithium niobate thin film waveguide device, and the specific process comprises the following steps:
a. and (3) coating the electron beam photoresist 4 on the lithium niobate thin film waveguide structure with the mark 6 obtained in the step S108 according to the requirement.
b. And (5) electron beam exposure and development.
The step is to perform layout alignment according to the coordinate system established by the mark 6 exposure layout, and develop the electron beam photoresist 4 on the top layer.
c. And (5) coating and stripping to obtain the lithium niobate thin film waveguide device with the mark 6.
In this step, 10nm of metallic titanium (Ti) or 490nm of metallic gold 9 (Au) is evaporated by electron beam evaporation, and the lift-off process may be replaced by an etching process to remove the electron beam photoresist 4 on the top layer.
d. Coating protective film silicon dioxide 2 (SiO 2 ）。
Step S109 is a subsequent step of preparing a lithium niobate thin film waveguide device, and the specific manufacturing process may be other processes that are mature in the prior art, which is not limited by the present application.
In order to verify the effect of the preparation method of the present application, the waveguide morphology after HSQ (FOX 16) exposure, development and metal chrome Cr mask cleaning and the waveguide morphology after PMMA exposure, development and metal chrome Cr mask cleaning are compared, and the comparison results are shown in fig. 5a, fig. 5b, fig. 6a, fig. 6b, fig. 7a and fig. 7b, in which x and y coordinate axes represent the lengths tested in the x and y directions (y direction is the propagation direction), ra is the roughness, and it can be seen that the ridge waveguide prepared by the method of the present application has relatively expensive HSQ on the upper surface and side wall roughness and the ridge waveguide manufactured by the complex process is not substantially increased, and scattering is not significantly increased.
According to the preparation method of the lithium niobate thin film waveguide device, aiming at the thinner lithium niobate thin film 3, the technology of one-time overlay of the mark 6 and the mask is adopted, so that the overlay accuracy is improved, the overlay error is reduced, the one-step overlay process greatly reduces the process steps, the cost is saved in that the metal evaporation and lift-off process steps are reduced, the pollution of lift-off to a wafer is reduced, and the yield is improved.
Meanwhile, the positive photoresist is adopted for the electron beam photoresist 4, so that the cost is saved, the price of the HSQ electron beam exposure photoresist is high, about 20 ten thousand yuan/L, PMMA is less than 1 ten thousand yuan/L, and the cost is greatly reduced.
In addition, this embodiment provides a lithium niobate thin film waveguide device, where the lithium niobate thin film waveguide device is prepared according to the preparation method of the lithium niobate thin film waveguide device, and specific implementation procedures of the preparation method are described in the above method embodiments, and are not described here again.
The above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (10)
1. The preparation method of the lithium niobate thin film waveguide device is characterized by comprising the following steps:
providing a lithium niobate thin film wafer;
coating electron beam photoresist on a lithium niobate thin film wafer, wherein the electron beam photoresist comprises positive photoresist;
carrying out electron beam exposure, development, coating and stripping on a lithium niobate film wafer coated with electron beam photoresist to obtain a mark and a waveguide structure hard mask; the coating process comprises metal plating, wherein the marks and the waveguide structure hard mask are all made of metal materials;
after the mark protection treatment, etching the lithium niobate thin film by using a waveguide structure hard mask through an etching process, and cleaning to obtain a lithium niobate thin film waveguide structure with a mark;
and obtaining the lithium niobate thin film waveguide device through the lithium niobate thin film waveguide structure with the marks.
2. The method of fabricating a lithium niobate thin film waveguide device of claim 1, further comprising a step of dehydration baking the lithium niobate thin film wafer before coating the electron beam resist on the lithium niobate thin film wafer.
3. The method of manufacturing a lithium niobate thin film waveguide device according to claim 1, further comprising the steps of baking, applying a conductive paste, and baking sequentially after applying an electron beam resist to the lithium niobate thin film wafer.
4. The method of fabricating a lithium niobate thin film waveguide device according to claim 1, wherein the electron beam resist is applied to the lithium niobate thin film wafer by spin-coating.
5. The method of manufacturing a lithium niobate thin film waveguide device according to claim 1, wherein the thickness of the lithium niobate thin film in the lithium niobate thin film wafer is 300 to 1200nm.
6. The method of fabricating a lithium niobate thin film waveguide device of claim 1, wherein the waveguide structure hard mask comprises a straight waveguide, a micro-ring, a Y-waveguide, an S-waveguide, an MMI, and/or a PBS waveguide structure.
7. The method of manufacturing a lithium niobate thin film waveguide device according to claim 1, wherein the metal material plated in the plating process is chromium.
8. The method of fabricating a lithium niobate thin film waveguide device of claim 7, wherein the thickness of chromium is greater than 150nm.
9. The method of fabricating a lithium niobate thin film waveguide device of claim 1, wherein the electron beam resist comprises PMMA.
10. A lithium niobate thin film waveguide device, characterized by being produced according to the production method of a lithium niobate thin film waveguide device according to any one of claims 1 to 9.
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| CN202311203319.XA CN116953850B (en) | 2023-09-19 | 2023-09-19 | Lithium niobate thin film waveguide device and preparation method thereof |
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| CN202311203319.XA CN116953850B (en) | 2023-09-19 | 2023-09-19 | Lithium niobate thin film waveguide device and preparation method thereof |
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| CN116953850B CN116953850B (en) | 2024-01-19 |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001297963A (en) * | 2000-04-12 | 2001-10-26 | Oki Electric Ind Co Ltd | Alignment method |
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