CN116936346A - Abrasive disc cleaning process - Google Patents

Abrasive disc cleaning process Download PDF

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Publication number
CN116936346A
CN116936346A CN202310966724.0A CN202310966724A CN116936346A CN 116936346 A CN116936346 A CN 116936346A CN 202310966724 A CN202310966724 A CN 202310966724A CN 116936346 A CN116936346 A CN 116936346A
Authority
CN
China
Prior art keywords
cleaning
silicon wafer
stage
tanks
liquid medicine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310966724.0A
Other languages
Chinese (zh)
Inventor
白玉麟
段立群
孙希凯
东士博
刘建伟
谭永麟
孙晨光
王彦君
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Zhonghuan Advanced Material Technology Co Ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
Original Assignee
Tianjin Zhonghuan Advanced Material Technology Co Ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Zhonghuan Advanced Material Technology Co Ltd, Zhonghuan Advanced Semiconductor Materials Co Ltd filed Critical Tianjin Zhonghuan Advanced Material Technology Co Ltd
Priority to CN202310966724.0A priority Critical patent/CN116936346A/en
Publication of CN116936346A publication Critical patent/CN116936346A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/003—Cleaning involving contact with foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/041—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Abstract

The application provides a grinding disc cleaning process, which comprises the following steps: pre-cleaning the grinded silicon wafer, and then cleaning the pre-cleaned silicon wafer with alkali liquor; wherein, the liquid medicine used in the alkali liquor cleaning is a weak alkaline cleaning agent. The abrasive disc cleaning process is suitable for cleaning various products, has good cleaning effect and high quality, avoids the waste of switching working hours caused by switching of various processes, and improves the cleaning efficiency; can effectively remove the residual impurities on the surface of the silicon wafer, ensures that the removal amount after corrosion is less than 0.5um, and can not influence the TTV of the product.

Description

Abrasive disc cleaning process
Technical Field
The application belongs to the technical field of semiconductor silicon wafer cleaning, and particularly relates to a grinding disc cleaning process.
Background
After the silicon wafer is processed, the silicon wafer needs to be cleaned, and the cleaning effect directly influences the technical parameters of the subsequent semiconductor chips. The existing concentrated alkaline cleaning process is only suitable for heavily doped semiconductor silicon wafers, but not suitable for lightly doped semiconductor silicon wafers; moreover, the existing cleaning process has poor cleaning effect and inconsistent corrosion effect on the thickness of the damaged layer of the silicon wafer, so that the waste of the silicon wafer raw materials is serious; the service life of the cleaning machine is also affected; meanwhile, the too high alkali liquor concentration causes higher difficulty in sewage treatment after the alkali liquor is discharged.
Disclosure of Invention
The application provides a grinding plate cleaning process which is suitable for heavily doped and lightly doped semiconductor silicon wafers and solves the technical problems of poor cleaning effect, serious material waste and ring diameter pollution of the existing cleaning process.
In order to solve at least one of the technical problems, the application adopts the following technical scheme:
the abrasive disc cleaning process includes the following steps: pre-cleaning the grinded silicon wafer, and then cleaning the pre-cleaned silicon wafer with alkali liquor; wherein, the liquid medicine used in the alkali liquor cleaning is a weak alkaline cleaning agent.
Further, the liquid medicine components during the alkali liquor cleaning comprise pure water, an active agent and sodium hydroxide, and the PH value of the alkali liquor is 12-13.
Further, the pre-cleaning comprises the steps of placing a wafer basket carrying silicon wafers into a plurality of cleaning tanks to sequentially carry out bubbling cleaning;
all silicon wafers are vertically interpolated in a wafer basket;
and in the pre-cleaning, at least two continuous liquid medicine cleaning tanks are arranged, and the components in the liquid medicine cleaning tanks are the same as the liquid medicine used in the alkali liquor cleaning.
Furthermore, the method further comprises the step of circularly cleaning the silicon wafer in a pure water cleaning tank before the liquid medicine tank in the pre-cleaning;
and the overflow cleaning is carried out on the silicon wafer in the pure water cleaning tank after the liquid medicine tank in the pre-cleaning.
Further, the alkali liquor cleaning comprises a first section of cleaning, a second section of cleaning and a third section of cleaning for the silicon wafer in a plurality of cleaning tanks in sequence, wherein the first section of cleaning and the second section of cleaning are both carried out in the same-component weak alkaline cleaning tanks; the three-stage cleaning is performed in a plurality of pure water cleaning tanks;
the cleaning temperatures and the cleaning times in the first-stage cleaning, the second-stage cleaning and the third-stage cleaning are different from each other.
Further, the one-stage cleaning comprises three cleaning tanks for soaking the silicon wafers, wherein the cleaning temperature is 33-42 ℃, and the cleaning time is 5min.
Further, the two-stage cleaning comprises four cleaning tanks, the cleaning temperature is 50-60 ℃, and the cleaning time is 350-370s; the liquid medicine in the cleaning tanks in the first-stage cleaning and the second-stage cleaning is continuously and circularly added, and the liquid medicine after cleaning is filtered.
Further, the three-section cleaning comprises four pure water cleaning tanks, and pure water in the cleaning tanks is filtered while overflowing; the cleaning temperature is 35-45 ℃ higher than the cleaning temperature of the first section of cleaning; and the three-stage cleaning time is 320-340s.
Further, all the cleaning tanks are internally provided with ultrasonic waves;
in the first section of cleaning, the silicon wafer is kept still in a cleaning tank for cleaning;
in the second-section cleaning and the third-section cleaning, the silicon wafer edge is controlled to periodically rotate in the two directions along the center of the silicon wafer edge in the vertical direction, and meanwhile, the whole silicon wafer is controlled to perform up-and-down reciprocating throwing in the wafer basket.
Further, after the liquid medicine is cleaned, the silicon wafer is dried, and the temperature is 45-55 ℃; the spin-drying time is 3-5min.
The abrasive disc cleaning process designed by the application is suitable for cleaning various products, has good cleaning effect and high quality, avoids the waste of switching working hours caused by switching of various processes, and improves the cleaning efficiency; can effectively remove the residual impurities on the surface of the silicon wafer, ensures that the removal amount after corrosion is less than 0.5um, and can not influence the TTV of the product.
Drawings
FIG. 1 is a flow chart of a process for cleaning a grinding plate in accordance with the present application;
FIG. 2 is a schematic view of the structure in the pre-cleaning of the present application;
FIG. 3 is a schematic diagram of the structure of the weak alkaline cleaning in the present application.
In the figure:
Detailed Description
The application will now be described in detail with reference to the drawings and specific examples.
The embodiment provides a process for cleaning a grinding disc, as shown in fig. 1-3, comprising the following steps:
s1, pre-cleaning the ground silicon wafer.
The pre-cleaning mainly removes large particle impurities on the surface of the silicon wafer in a free state, and can also effectively ensure that the silicon wafer is always in a wet surface state to be cleaned.
Specifically, firstly, the silicon wafers to be pre-cleaned are vertically inserted into the wafer basket, so that all the silicon wafers are vertically arranged, the silicon wafers are convenient to completely contact with water liquid in the cleaning tank, and particle impurities on the surfaces of the silicon wafers are convenient to clean by the water liquid.
Four cleaning tanks, namely a cleaning tank 1, a cleaning tank 2, a cleaning tank 3 and a cleaning tank 4 are respectively arranged in the pre-cleaning, wherein bubbling is arranged in the four cleaning tanks, namely compressed air is continuously introduced into the four cleaning tanks so as to bubble in pure water, meanwhile, ultrasonic waves are arranged in the four cleaning tanks, and the ultrasonic waves are added on the basis of the bubbling, so that the fluidity of water can be further improved, and particle impurities on the surface of a silicon wafer can be rapidly and effectively removed.
In the pre-cleaning process, the cleaning tank 1 is a pure water cleaning tank and is used for soaking the silicon wafer firstly. The cleaning tank 2 and the cleaning tank 3 are both liquid medicine cleaning tanks, the liquid medicine is a weak alkaline cleaning agent, the liquid medicine is mainly used for cleaning large particle impurities on the surface of a silicon wafer, the liquid medicine comprises pure water, an active agent and sodium hydroxide, the PH value of alkali liquor is 12-13, and the weak alkaline color in the liquid medicine cleaning tank is light yellow. Wherein, the washing tank 1, the washing tank 2 and the washing tank 3 all adopt a circulating and filtering mode to flow the water liquid, namely continuously circulate the solution in the tank so as to keep the solution in the tank as qualified cleaning liquid, and simultaneously filter the cleaning liquid used in the tank to filter out impurities, so that the clean water liquid is recycled again. The cleaning tank 4 is also a pure water cleaning tank and is used for cleaning weak base liquid medicine and impurities on the surface of the silicon wafer; the pure water in the cleaning tank 4 is always in an overflow circulation state to continuously ensure that the pure water in the cleaning tank 4 is clean and flows.
In the pre-cleaning process, the total cleaning time of the four cleaning tanks is 5min, and the cleaning temperature in the cleaning tank 1 is 33-42 ℃; the cleaning temperatures in the cleaning tank 2 and the cleaning tank 3 are 50-60 ℃; the cleaning temperature in the cleaning tank 4 is 35-45 deg.c, and the temperature of the cleaning tank 4 is greater than the temperature in the cleaning tank 1.
S2, cleaning the pre-cleaned silicon wafer with alkali liquor.
The liquid medicine used in the process is a weakly alkaline cleaning agent, the components of the liquid medicine are the same as those of the liquid medicine used in the step S1, and the PH value of the liquid medicine is also the same. Preferably, the liquid medicine component in the alkali liquor cleaning is still a mixed solution of pure water, an active agent and sodium hydroxide, the PH value of the weak alkaline alkali liquor is 12-13, and the weak alkaline color in the liquid medicine cleaning tank is light yellow.
In the alkaline solution cleaning process, sequentially carrying out primary cleaning, secondary cleaning and tertiary cleaning on the silicon wafers in a plurality of cleaning tanks, wherein solutions in the cleaning tanks used in the primary cleaning and the secondary cleaning are all weak alkaline liquid medicines, namely all the silicon wafers are cleaned in the weak alkaline cleaning tanks with the same components in the primary cleaning and the secondary cleaning; the three-stage cleaning is performed in a plurality of pure water cleaning tanks.
Specifically, the one-stage cleaning comprises three cleaning tanks, namely a cleaning tank 5, a cleaning tank 6 and a cleaning tank 7; the second-stage cleaning comprises four cleaning tanks, namely a cleaning tank 8, a cleaning tank 9, a cleaning tank 10 and a cleaning tank 11; the three-section cleaning tanks comprise four cleaning tanks, namely cleaning tank 12, cleaning tank 13, cleaning tank 14 and cleaning tank 15. Wherein the cleaning temperatures and the cleaning times in the first-stage cleaning, the second-stage cleaning and the third-stage cleaning are different from each other.
In the first-stage cleaning and the second-stage cleaning, all the cleaning tanks are weak alkaline cleaning tanks, and the liquid medicine flows and is circularly filtered, namely, the solution in the tanks is continuously circulated so as to keep the solution in the tanks as qualified cleaning liquid, and meanwhile, the cleaning liquid used in the tanks is filtered to filter out impurities, so that the clean water liquid is recycled again. All cleaning tanks in the three-stage cleaning are pure water tanks and are used for cleaning weak base liquid medicine and impurities on the surface of the silicon wafer; the pure water in the tank is always in an overflow circulation state so as to continuously ensure that the pure water in each cleaning tank is clean and flows.
In the whole cleaning process, ultrasonic waves are arranged in all cleaning tanks. In one section of cleaning, the silicon wafer is kept still in a cleaning tank with bubbling for cleaning; in the second-stage cleaning and the third-stage cleaning, the silicon wafer is controlled to periodically rotate in two directions along the center of the silicon wafer in the vertical direction, and meanwhile, the whole silicon wafer is controlled to reciprocate up and down in the wafer basket, namely, the silicon wafer is rotated while being polished, so that the silicon wafer can be completely cleaned by liquid medicine and pure water, and the cleaning effect is further improved.
In one section of cleaning, three cleaning tanks are used for soaking the silicon wafers, the cleaning temperature is 33-42 ℃, and the cleaning time of the three cleaning tanks is 5min. The cleaning at lower temperature is convenient for the emission of the liquid medicine, and can also prevent the liquid medicine from burning the surface quality of the silicon wafer.
In the two-stage cleaning, the temperatures of the four cleaning tanks are 50-60 ℃, and the cleaning time of the four cleaning tanks is 350-370s. And the liquid medicine in all the cleaning tanks in the first-stage cleaning and the second-stage cleaning is continuously and circularly added, and meanwhile, the liquid medicine after cleaning also needs to be filtered.
In the three-stage cleaning, the pure water in the four cleaning tanks flows in a mode of overflow and filtration; the cleaning temperature is 35-45 ℃ higher than the cleaning temperature in one section of cleaning; and the total time of the three cleaning stages is 320-340s.
After pre-cleaning and liquid medicine cleaning, the residual grinding sand, silicon powder, silicon oxide, metal substances and the like on the surface of the ground silicon wafer can be cleaned completely.
S3, spin-drying the silicon wafer.
The device is used for quickly spin-drying water drops on the surface of the silicon wafer, uniformly placing the wafer basket carrying the silicon wafer into a spin dryer, fixing the wafer basket in a clamp on the spin dryer, and controlling the wafer basket and the silicon wafer to rotate in a one-pass manner, wherein the temperature during spin-drying is 45-55 ℃, and the spin-drying time is 3-5min.
The abrasive disc cleaning process designed by the application is suitable for cleaning various products, has good cleaning effect and high quality, avoids the waste of switching working hours caused by switching of various processes, and improves the cleaning efficiency; can effectively remove the residual impurities on the surface of the silicon wafer, ensures that the removal amount after corrosion is less than 0.5um, and can not influence the TTV of the product.
The foregoing detailed description of the embodiments of the application has been presented only to illustrate the preferred embodiments of the application and should not be taken as limiting the scope of the application. All equivalent changes and modifications within the scope of the present application are intended to be covered by the present application.

Claims (10)

1. The abrasive disc cleaning process is characterized by comprising the following steps of: pre-cleaning the grinded silicon wafer, and then cleaning the pre-cleaned silicon wafer with alkali liquor; wherein, the liquid medicine used in the alkali liquor cleaning is a weak alkaline cleaning agent.
2. The process according to claim 1, wherein the chemical composition during the alkaline washing comprises pure water, an active agent and sodium hydroxide, and the alkaline solution has a pH of 12-13.
3. The process according to claim 1 or 2, wherein the pre-cleaning comprises placing a wafer basket carrying silicon wafers in a plurality of cleaning tanks to perform bubbling cleaning in sequence;
all silicon wafers are vertically interpolated in a wafer basket;
and in the pre-cleaning, at least two continuous liquid medicine cleaning tanks are arranged, and the components in the liquid medicine cleaning tanks are the same as the liquid medicine used in the alkali liquor cleaning.
4. A wafer polishing process according to claim 3, further comprising, before the cleaning of the chemical liquid tank in the pre-cleaning, performing a cyclic cleaning of the silicon wafer in the pure water cleaning tank;
and the overflow cleaning is carried out on the silicon wafer in the pure water cleaning tank after the liquid medicine tank in the pre-cleaning.
5. A process for cleaning a polishing pad according to any one of claims 1 to 2 and 4, wherein the alkaline cleaning comprises a first-stage cleaning, a second-stage cleaning and a third-stage cleaning of a silicon wafer in a plurality of cleaning tanks in sequence, wherein the first-stage cleaning and the second-stage cleaning are both performed in a weakly alkaline cleaning tank of the same composition; the three-stage cleaning is performed in a plurality of pure water cleaning tanks;
the cleaning temperatures and the cleaning times in the first-stage cleaning, the second-stage cleaning and the third-stage cleaning are different from each other.
6. The abrasive disc cleaning process according to claim 5, wherein the one-stage cleaning comprises three cleaning tanks for immersing the silicon wafer, the cleaning temperature is 33-42 ℃, and the cleaning time is 5min.
7. The process of claim 6, wherein the two-stage cleaning comprises four cleaning tanks having a cleaning temperature of 50-60 ℃ and a cleaning time of 350-370s; the liquid medicine in the cleaning tanks in the first-stage cleaning and the second-stage cleaning is continuously and circularly added, and the liquid medicine after cleaning is filtered.
8. The process according to claim 6 or 7, wherein the three-stage washing includes four pure water washing tanks, and pure water in the washing tanks is filtered while overflowing; the cleaning temperature is 35-45 ℃ higher than the cleaning temperature of the first section of cleaning; and the three-stage cleaning time is 320-340s.
9. The process of claim 8, wherein ultrasonic waves are provided in all the cleaning tanks;
in the first section of cleaning, the silicon wafer is kept still in a cleaning tank for cleaning;
in the second-section cleaning and the third-section cleaning, the silicon wafer edge is controlled to periodically rotate in the two directions along the center of the silicon wafer edge in the vertical direction, and meanwhile, the whole silicon wafer is controlled to perform up-and-down reciprocating throwing in the wafer basket.
10. The process for cleaning a grinding disc according to any one of claims 1-2, 4, 6-7 and 9, further comprising spin-drying the silicon wafer at 45-55deg.C after the cleaning with the chemical solution; the spin-drying time is 3-5min.
CN202310966724.0A 2023-08-02 2023-08-02 Abrasive disc cleaning process Pending CN116936346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310966724.0A CN116936346A (en) 2023-08-02 2023-08-02 Abrasive disc cleaning process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310966724.0A CN116936346A (en) 2023-08-02 2023-08-02 Abrasive disc cleaning process

Publications (1)

Publication Number Publication Date
CN116936346A true CN116936346A (en) 2023-10-24

Family

ID=88390730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310966724.0A Pending CN116936346A (en) 2023-08-02 2023-08-02 Abrasive disc cleaning process

Country Status (1)

Country Link
CN (1) CN116936346A (en)

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