CN116913991A - Heterojunction solar cell, preparation method thereof, photovoltaic module and photovoltaic system - Google Patents
Heterojunction solar cell, preparation method thereof, photovoltaic module and photovoltaic system Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application relates to a heterojunction solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic system. The heterojunction solar cell comprises a heterojunction cell body, a transition layer and a metal electrode; the heterojunction battery main body comprises a substrate, wherein the surfaces of two opposite sides of the substrate are sequentially provided with an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer in a laminated manner; a transition layer is laminated on the transparent conductive layer on at least one side of the substrate, and the transition layer is positioned on one side of the transparent conductive layer, which is away from the substrate; the transparent conductive layers on the two opposite sides of the substrate are electrically connected with metal electrodes, and the metal electrodes on the same side of the substrate as the transition layer are arranged on the transition layer; the transition layer is configured to be capable of at least partially blocking diffusion of the metal electrode to the corresponding transparent conductive layer; therefore, pollution and damage of the transparent conducting layer in the battery manufacturing process can be reduced, and the conversion efficiency of the heterojunction solar battery can be improved.
Description
Technical Field
The application relates to the technical field of photovoltaic cells, in particular to a heterojunction solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic system.
Background
A solar cell, also called a photovoltaic cell, is a semiconductor device that directly converts light energy of the sun into electrical energy. Because it is a green environment-friendly product, does not cause environmental pollution, and solar energy is renewable resource, therefore, the solar cell is a novel cell with wide development prospect.
The heterojunction battery has the advantages of simple structure, low process temperature, good passivation effect, high open-circuit voltage, good temperature characteristic, double-sided power generation and the like, and is one of hot spot directions of the high-conversion-efficiency silicon-based solar battery.
In the related art, in the preparation process of the heterojunction battery, pollution and damage of the transparent conductive layer and even the substrate (silicon wafer) easily occur, so that the conversion efficiency of the heterojunction battery is reduced.
Disclosure of Invention
Based on the above, the application provides a heterojunction solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic system, and the conversion efficiency of the heterojunction solar cell is improved.
Embodiments of the first aspect of the present application provide a heterojunction solar cell comprising a heterojunction cell body, a transition layer, and a metal electrode;
the heterojunction battery main body comprises a substrate, wherein the surfaces of two opposite sides of the substrate are respectively provided with an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer in a laminated manner;
the transition layer is laminated on the transparent conductive layer on at least one side of the substrate, and the transition layer is positioned on one side of the transparent conductive layer, which is away from the substrate;
the transparent conductive layers on the two opposite sides of the substrate are electrically connected with metal electrodes, and the metal electrodes on the same side of the substrate as the transition layer are arranged on the transition layer;
wherein the transition layer is configured to at least partially block diffusion of the metal electrode to the corresponding transparent conductive layer.
In some of these embodiments, the transition layer is laminated on the transparent conductive layer on opposite sides of the substrate.
In some of these embodiments, a side of the metal electrode proximate to the substrate is in contact with a side surface of the transition layer facing away from the substrate; or one side of the metal electrode close to the substrate is positioned in the transition layer, and a space exists between one side of the metal electrode close to the substrate and one side surface of the transition layer close to the substrate.
In some of these embodiments, the transition layer is a tunnel oxide layer, an inorganic conductive layer, or an organic conductive layer.
In some of these embodiments, a side of the metal electrode proximate to the substrate is in contact with the transparent conductive layer through the transition layer.
In some of these embodiments, the transition layer is an inorganic layer or an organic layer.
In some embodiments, the transition layer is an inorganic layer, the thickness of the transition layer is equal everywhere, and the thickness of the transition layer is 0.5nm-2nm; or the transition layer is an organic layer, the thickness of each part of the transition layer is unequal, the minimum thickness of the transition layer is 0.5nm-20nm, and the maximum thickness of the transition layer is 10nm-2000nm.
In some of these embodiments, the doped semiconductor film is a doped amorphous silicon film, a microcrystalline silicon film, or a nanocrystalline silicon film.
An embodiment of the second aspect of the present application provides a method for manufacturing a heterojunction solar cell, including:
providing a heterojunction battery body, wherein the heterojunction battery body comprises a substrate, and the surfaces of two opposite sides of the substrate are sequentially provided with an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer in a laminated manner;
forming a transition layer on the transparent conductive layer on at least one side of the substrate, the transition layer being on a side of the transparent conductive layer facing away from the substrate;
forming a metal electrode on one side of the transition layer, which is far away from the substrate, and electrically connecting the metal electrode with the transparent conductive layer;
wherein the transition layer is configured to at least partially block diffusion of the metal electrode to the corresponding transparent conductive layer.
An embodiment of the third aspect of the application provides a photovoltaic module comprising a heterojunction solar cell as defined in any one of the first aspects.
Embodiments of the fourth aspect of the present application provide a photovoltaic system comprising a photovoltaic module as described in the third aspect.
According to the heterojunction solar cell, the transition layer is laminated on the transparent conductive layer on at least one side of the substrate, and the transition layer is positioned on one side of the transparent conductive layer, which is away from the substrate, so that the transparent conductive layer can be protected, and the probability of mechanical damage of the transparent conductive layer in the metal electrode manufacturing process is reduced; the transparent conductive layers on the two opposite sides of the substrate are electrically connected with metal electrodes, and the metal electrodes on the same side of the substrate as the transition layer are arranged on the transition layer; the transition layer is configured to be capable of at least partially blocking diffusion of the metal electrode to the corresponding transparent conductive layer, such that contamination of the transparent conductive layer and the heterojunction battery body by the screen printed metal electrode can be reduced. In conclusion, the application can reduce pollution and damage of the transparent conducting layer in the battery manufacturing process and improve the conversion efficiency of the heterojunction solar battery.
Drawings
Fig. 1 is a schematic diagram of a first structure of a heterojunction solar cell according to some embodiments of the application.
Fig. 2 is a schematic diagram of a second structure of a heterojunction solar cell according to some embodiments of the application.
Fig. 3 is a schematic diagram of a third structure of a heterojunction solar cell according to some embodiments of the application.
Reference numerals illustrate:
10. heterojunction solar cells;
110. a heterojunction battery body; 120. a transition layer; 130. a metal electrode; 131. a first electrode; 132. a second electrode;
111. a substrate; 112. an intrinsic amorphous silicon layer; 1121. a first intrinsic amorphous silicon layer; 1122. a second intrinsic amorphous silicon layer; 113. doping the semiconductor film layer; 1131. a first doped semiconductor film layer; 1132. a second doped semiconductor film layer; 114. a transparent conductive layer; 1141. a first transparent conductive layer; 1142. and a second transparent conductive layer.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that, if any, these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., are used herein with respect to the orientation or positional relationship shown in the drawings, these terms refer to the orientation or positional relationship for convenience of description and simplicity of description only, and do not indicate or imply that the apparatus or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the terms "plurality" and "a plurality" if any, mean at least two, such as two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, the meaning of a first feature being "on" or "off" a second feature, and the like, is that the first and second features are either in direct contact or in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that if an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. If an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein, if any, are for descriptive purposes only and do not represent a unique embodiment.
Solar cells generate electricity as a sustainable clean energy source that uses the photovoltaic effect of semiconductor P-N junctions to convert sunlight into electrical energy. The heterojunction battery has the advantages of simple structure, low process temperature, good passivation effect, high open-circuit voltage, good temperature characteristic, double-sided power generation and the like, and is one of hot spot directions of the high-conversion-efficiency silicon-based solar battery.
In the related art, contamination and damage of the transparent conductive layer, and even the substrate (silicon wafer) easily occur in the heterojunction cell manufacturing process. For example, when a screen printing process is used to manufacture a metal electrode, a slurry (such as a solvent in the slurry and an organic small molecule resin) used for screen printing may infiltrate into a transparent conductive layer and even infiltrate into a silicon wafer, so that the transparent conductive layer and the silicon wafer are polluted.
Based on the problems, the application provides a heterojunction solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic system, so as to reduce pollution and damage of a transparent conducting layer in the cell manufacturing process and improve the conversion efficiency of the heterojunction solar cell.
Fig. 1 shows a first schematic structure of a heterojunction solar cell in some embodiments of the application; FIG. 2 illustrates a second structural schematic of a heterojunction solar cell in some embodiments of the application; fig. 3 illustrates a third structural schematic of a heterojunction solar cell in some embodiments of the application.
Embodiments of the first aspect of the present application provide a heterojunction solar cell 10 comprising a heterojunction cell body 110, a transition layer 120, and a metal electrode 130; the heterojunction battery body 110 comprises a substrate 111, and an intrinsic amorphous silicon layer 112, a doped semiconductor film layer 113 and a transparent conductive layer 114 are sequentially laminated on the surfaces of the opposite sides of the substrate 111; a transition layer 120 is laminated on the transparent conductive layer 114 on at least one side of the substrate 111, and the transition layer 120 is located on the side of the transparent conductive layer 114 facing away from the substrate 111; the transparent conductive layers 114 on two opposite sides of the substrate 111 are electrically connected with the metal electrode 130, and the metal electrode 130 on the same side of the substrate 111 as the transition layer 120 is disposed on the transition layer 120; wherein the transition layer 120 is configured to be capable of at least partially diffusing the barrier metal electrode 130 to the corresponding transparent conductive layer 114.
According to the heterojunction solar cell 10 provided by the embodiment of the application, the transition layer 120 is laminated on the transparent conductive layer 114 on at least one side of the substrate 111, and the transition layer 120 is positioned on the side, away from the substrate 111, of the transparent conductive layer 114, so that the transparent conductive layer 114 can be protected, and the probability of mechanical damage of the transparent conductive layer 114 in the manufacturing process of the metal electrode 130 is reduced; the transparent conductive layers 114 on two opposite sides of the substrate 111 are electrically connected with the metal electrode 130, and the metal electrode 130 on the same side of the substrate 111 as the transition layer 120 is disposed on the transition layer 120; the transition layer 120 is configured to be able to at least partially block diffusion of the metal electrode 130 to the corresponding transparent conductive layer 114, so that contamination of the transparent conductive layer 114 and the heterojunction battery body 110 by the screen-printed metal electrode 130 can be reduced; in addition, the surface of the transparent conductive layer 114 has an uneven micro-nano structure, after the transparent conductive layer 114 is annealed, crystallization forms a grain boundary, and the transition layer 120 is located on one side of the transparent conductive layer 114, which is away from the substrate 111, and the transition layer 120 can fill the micro-nano structure and the grain boundary on one side surface of the transparent conductive layer 114, which is away from the substrate 111, so that the infiltration pollution of the metal electrode 130 to the transparent conductive layer 114 through the micro-nano structure and the grain boundary can be reduced, the open-circuit voltage of the heterojunction solar cell 10 can be further improved, and the conversion efficiency of the heterojunction solar cell 10 can be improved. In addition, the transition layer 120 is located on the side of the transparent conductive layer 114 away from the substrate 111, and the metal electrodes 130 located on the same side of the substrate 111 as the transition layer 120 are all disposed on the transition layer 120, so that the problem of poor adhesion between the prepared metal electrodes 130 and the transparent conductive layer 114 can be overcome, the probability of gate breakage of the metal electrodes 130 is reduced, the series resistance is reduced, the filling factor is further improved, and the conversion efficiency of the heterojunction solar cell 10 is further improved.
It should be noted that the substrate 111 has a first surface and a second surface (not shown) disposed opposite to each other; a first intrinsic amorphous silicon layer 1121, a first doped semiconductor film layer 1131, and a first transparent conductive layer 1141 are sequentially stacked on the first surface of the substrate 111 in a direction away from the substrate 111, and a second intrinsic amorphous silicon layer 1122, a second doped semiconductor film layer 1132, and a second transparent conductive layer 1142 are sequentially stacked on the second surface of the substrate 111 in a direction away from the substrate 111; a transition layer 120 is disposed on a surface of at least one of the first transparent conductive layer 1141 and the second transparent conductive layer 1142, which is away from the substrate 111, the metal electrode 130 includes a first electrode 131 and a second electrode 132, the first electrode 131 is electrically connected to the first transparent conductive layer 1141, and the second electrode 132 is electrically connected to the second transparent conductive layer 1142; a first electrode 131 or a second electrode 132 on the same side of the substrate 111 as the transition layer 120 is disposed on the transition layer 120. The substrate 111 may be a silicon wafer, which may be an N-type silicon wafer or a P-type silicon wafer, the first doped semiconductor film 1131 may be an N-type doped semiconductor film, and the second doped semiconductor film 1132 may be a P-type doped semiconductor film. Of course, the first doped semiconductor film 1131 may be a P-type doped semiconductor film, and the second doped semiconductor film 1132 may be an N-type doped semiconductor film.
As shown in fig. 1 to 3, in some of the embodiments, a transition layer 120 is laminated on the transparent conductive layer 114 located on opposite sides of the substrate 111. By laminating the transition layers 120 on the transparent conductive layers 114 on the opposite sides of the substrate 111, the transparent conductive layers 114 on the opposite sides of the substrate 111 can be protected, pollution and damage of the transparent conductive layers 114 on the opposite sides of the substrate 111 in the battery manufacturing process can be reduced, and the conversion efficiency of the heterojunction solar cell 10 can be further improved.
As shown in fig. 1 and 2, in some of these embodiments, a side of the metal electrode 130 proximate to the substrate 111 is in contact with a surface of a side of the transition layer 120 facing away from the substrate 111; or the side of the metal electrode 130 close to the substrate 111 is located in the transition layer 120, and a space exists between the side of the metal electrode 130 close to the substrate 111 and the surface of the transition layer 120 close to the substrate 111, and the transition layer 120 can at least partially block the diffusion of the metal electrode 130 to the corresponding transparent conductive layer 114, so that the pollution probability of the transparent conductive layer 114 can be further reduced, and the conversion efficiency of the heterojunction solar cell 10 is improved.
In some of these embodiments, the transition layer 120 is a tunnel oxide layer, an inorganic conductive layer, or an organic conductive layer. Thus, the metal electrode 130 can be directly electrically connected to the transparent conductive layer 114 without penetrating the transition layer 120. The transition layer 120 is preferably a tunneling oxide layer, so that the metal semiconductor contact (schottky contact) between the metal electrode 130 and the transparent conductive layer 114 can be converted into an ohmic contact, which can reduce the overlap resistance between the metal electrode 130 and the transparent conductive layer 114 and improve the conversion efficiency of the battery.
Further, the material of the transition layer 120 may be silicon oxide, aluminum oxide, titanium oxide, zinc oxide, or the like; alternatively, the material of the transition layer 120 may be Polydioxyethylthiophene (PEDOT).
In some of these embodiments, the tunnel oxide layer and the inorganic conductive layer are approximately equal in thickness throughout the thickness of 0.5nm-2nm.
In some embodiments, the thickness is not equal throughout the organic conductive layer, with the minimum thickness of the organic conductive layer being between 0.5nm and 20nm, preferably between 5 and 10nm, and the maximum thickness being between 10nm and 2000nm.
As shown in fig. 3, in some of these embodiments, a side of the metal electrode 130 near the substrate 111 is in contact with the transparent conductive layer 114 through the transition layer 120. The thickness of the transition layer 120 may be designed according to the material of the transition layer 120, so that the side of the metal electrode 130, which is close to the substrate 111, passes through the transition layer 120 to contact with the transparent conductive layer 114, thereby realizing the electrical connection between the metal electrode 130 and the transparent conductive layer 114.
In some of these embodiments, the transition layer 120 is an inorganic layer or an organic layer. The transition layer 120 may be conductive or insulating. Specifically, the material of the transition layer 120 may be silicon oxide, aluminum oxide, titanium oxide, zinc oxide, or the like, and the material of the transition layer 120 may be polymer resin such as polyvinyl alcohol, cellulose, epoxy resin, acrylic resin, amino acid resin, or silicone resin. The material of the transition layer 120 may be Polydioxyethylthiophene (PEDOT).
In some of these embodiments, the transition layer 120 is an inorganic layer, the thickness of the transition layer 120 is approximately equal throughout the transition layer 120, and the thickness of the transition layer 120 is between 0.5nm and 2nm; or the transition layer 120 is an organic layer, the thickness of each part of the transition layer 120 is unequal, the minimum thickness of the transition layer 120 is 0.5nm-20nm, and the maximum thickness of the transition layer 120 is 10nm-2000nm.
In some embodiments, the doped semiconductor film 113 is a doped amorphous silicon film, a micro-crystalline silicon film or a nano-crystalline silicon film, which is suitable for the low temperature manufacturing process of the heterojunction solar cell 10, and improves the open circuit voltage of the heterojunction solar cell 10.
In some embodiments, the transparent conductive layer 114 may be tin doped indium oxide (ITO), cerium doped indium oxide (ICO), aluminum doped indium oxide (IWO), aluminum doped zinc oxide (AZO), VTTO, or zinc aluminum oxide Gallium (GAZO), etc.
An embodiment of the second aspect of the present application provides a method for manufacturing a heterojunction solar cell 10, comprising:
providing a heterojunction cell body 110, wherein the heterojunction cell body 110 comprises a substrate 111, and a layer 112, a doped semiconductor film layer 113 and a transparent conductive layer 114 are sequentially laminated on the surfaces of two opposite sides of the substrate 111; forming a transition layer 120 on the transparent conductive layer 114 on at least one side of the substrate 111, the transition layer 120 being on a side of the transparent conductive layer 114 facing away from the substrate 111;
forming a metal electrode 130 on a side of the transition layer 120 facing away from the substrate 111, and electrically connecting the metal electrode 130 with the transparent conductive layer 114;
wherein the transition layer 120 is configured to be capable of at least partially diffusing the barrier metal electrode 130 to the corresponding transparent conductive layer 114.
According to the preparation method of the heterojunction solar cell 10 provided by the embodiment of the application, the transition layer 120 is formed on the transparent conductive layer 114 positioned on at least one side of the substrate 111, and the transition layer 120 is positioned on one side of the transparent conductive layer 114 away from the substrate 111; thereby protecting the transparent conductive layer 114 and reducing the probability of mechanical damage of the transparent conductive layer 114 in the process of manufacturing the metal electrode 130; forming a metal electrode 130 on a side of the transition layer 120 facing away from the substrate 111, and electrically connecting the metal electrode 130 with the transparent conductive layer 114, wherein the transition layer 120 is configured to at least partially block diffusion of the metal electrode 130 to the corresponding transparent conductive layer 114, so that contamination of the transparent conductive layer 114 and the heterojunction battery body 110 by the screen-printed metal electrode 130 can be reduced; in addition, the surface of the transparent conductive layer 114 has an uneven micro-nano structure, after the transparent conductive layer 114 is annealed, crystallization forms a grain boundary, and the transition layer 120 is located on one side of the transparent conductive layer 114, which is away from the substrate 111, and the transition layer 120 can fill the micro-nano structure and the grain boundary on one side surface of the transparent conductive layer 114, which is away from the substrate 111, so that the infiltration pollution of the metal electrode 130 to the transparent conductive layer 114 through the micro-nano structure and the grain boundary can be reduced, the open-circuit voltage of the heterojunction solar cell 10 can be further improved, and the conversion efficiency of the heterojunction solar cell 10 can be improved. In addition, the transition layer 120 is located on the side of the transparent conductive layer 114 away from the substrate 111, and the metal electrodes 130 located on the same side of the substrate 111 as the transition layer 120 are all disposed on the transition layer 120, so that the problem of poor adhesion between the prepared metal electrodes 130 and the transparent conductive layer 114 can be overcome, the probability of gate breakage of the metal electrodes 130 is reduced, the series resistance is reduced, the filling factor is further improved, and the conversion efficiency of the heterojunction solar cell 10 is further improved.
In some of these embodiments, the transition layer 120 may be formed on the transparent conductive layer 114 located on at least one side of the substrate 111 by a method of Plasma Enhanced Chemical Vapor Deposition (PECVD), evaporation, physical Vapor Deposition (PVD), atomic Layer Deposition (ALD), spin coating, dip coating, spray coating, or roll coating.
In some embodiments, the transition layer 120 may be an inorganic layer, and the transition layer 120 may be formed by Plasma Enhanced Chemical Vapor Deposition (PECVD), evaporation, physical Vapor Deposition (PVD), or Atomic Layer Deposition (ALD).
In some embodiments, the transition layer 120 may be an organic layer, and the transition layer 120 may be formed using spin coating, dip coating, spray coating, or roll coating.
In some embodiments, the step of providing a heterojunction battery body 110 specifically includes:
providing a substrate 111, wherein the substrate 111 is provided with a first surface and a second surface which are oppositely arranged;
forming a first intrinsic amorphous silicon layer 1121112 and a second intrinsic amorphous silicon layer 1122 on the first and second sides of the substrate 111, respectively;
forming a first doped semiconductor film layer 1131 on a side of the first intrinsic amorphous silicon layer 1121 facing away from the substrate 111; forming a second doped semiconductor film layer 1132 on a side of the second intrinsic amorphous silicon layer 1122 facing away from the substrate 111;
forming a first transparent conductive layer 1141 on a side of the first doped semiconductor film layer 1131 facing away from the substrate 111; a second transparent conductive layer 1142 is formed on a side of the second doped semiconductor film layer 1132 facing away from the substrate 111.
It should be noted that, the substrate 111 may be a silicon wafer, and the silicon wafer may be an N-type silicon wafer or a P-type silicon wafer. The doping types of the first doped semiconductor film layer 1131 and the second doped semiconductor film layer 1132 are different. The first doped semiconductor film 1131 may be an N-type doped semiconductor film, and the second doped semiconductor film 1132 may be a P-type doped semiconductor film. Of course, the first doped semiconductor film 1131 may be a P-type doped semiconductor film, and the second doped semiconductor film 1132 may be an N-type doped semiconductor film.
In some embodiments, the doped semiconductor film 113 may be a doped amorphous silicon film, a microcrystalline silicon film, or a nanocrystalline silicon film; can be prepared by adopting a chemical vapor deposition method.
In order to facilitate understanding of the above preparation method provided by the embodiment of the present application, the preparation process of the heterojunction solar cell 10 provided by the embodiment of the present application is described in detail below.
1) And performing texturing and cleaning treatment on the silicon wafer to form pyramid structure textured surfaces on the surface of the silicon wafer.
Specifically, KOH solution, naOH solution and texturing additive are adopted to corrode the surface of the silicon wafer, and a pyramid structure textured surface is formed on the surface of the silicon wafer.
2) A first intrinsic amorphous silicon layer 1121 and a second intrinsic amorphous silicon layer 1122 are formed on opposite side surfaces of the textured silicon wafer, respectively, using a chemical vapor deposition method.
3) Forming a first doped semiconductor film 1131 on the surface of the side, facing away from the silicon wafer, of the first intrinsic amorphous silicon layer 1121 by adopting a chemical vapor deposition method;
the first doped semiconductor film 1131 may be a doped amorphous silicon film, a microcrystalline silicon film, or a nanocrystalline silicon film.
4) Forming a second doped semiconductor film 1132 on the surface of the side of the second intrinsic amorphous silicon layer 1122, which is away from the silicon wafer, by adopting a chemical vapor deposition method;
the second doped semiconductor film 1132 may be a doped amorphous silicon film, a microcrystalline silicon film, or a nanocrystalline silicon film.
5) Forming a first transparent conductive layer 1141 on the surface of the side, facing away from the silicon wafer, of the first doped semiconductor film 1131 by adopting a physical vapor deposition method, and forming a second transparent conductive layer 1142 on the surface of the side, facing away from the silicon wafer, of the second doped semiconductor film 1132 by adopting a physical vapor deposition method;
the first transparent conductive layer 1141 and the second transparent conductive layer 1142 may be simultaneously formed.
6) Forming a transition layer 120 on a side of at least one of the first transparent conductive layer 1141 and the second transparent conductive layer 1142 facing away from the silicon wafer;
different preparation methods may be used according to the material of the transition layer 120. If the transition layer 120 is an inorganic layer, the transition layer 120 may be formed by Plasma Enhanced Chemical Vapor Deposition (PECVD), evaporation, physical Vapor Deposition (PVD), or Atomic Layer Deposition (ALD). If the transition layer 120 is an organic layer, the transition layer 120 may be formed by spin coating, dip coating, spray coating, or roll coating.
7) The metal electrode 130 comprises a first electrode 131 and a second electrode 132, and the first electrode 131 and the second electrode 132 are respectively formed on one sides of the first transparent conductive layer 1141 and the second transparent conductive layer 1142, which are far away from the silicon wafer, by adopting a screen printing method; the first electrode 131 is electrically connected to the first transparent conductive layer 1141, and the second electrode 132 is electrically connected to the second transparent conductive layer 1142; a first electrode 131 or a second electrode 132 on the same side of the silicon wafer as the transition layer 120 is disposed on the transition layer 120.
In the above-mentioned scheme, the transition layer 120 is formed on the side of at least one of the first transparent conductive layer 1141 and the second transparent conductive layer 1142 facing away from the silicon wafer; therefore, the first transparent conductive layer 1141 and/or the second transparent conductive layer 1142 can be protected, and the probability of mechanical damage of the first transparent conductive layer 1141 and/or the second transparent conductive layer 1142 in the manufacturing process of the metal electrode 130 is reduced; the first electrode 131 or the second electrode 132 located on the same side of the silicon wafer as the transition layer 120 is disposed on the transition layer 120, and the transition layer 120 is configured to at least partially block the diffusion of the metal electrode 130 to the corresponding transparent conductive layer 114, so that the pollution of the screen printed metal electrode 130 to the first transparent conductive layer 1141 and/or the second transparent conductive layer 1142 and the silicon wafer can be reduced, further the open circuit voltage of the heterojunction solar cell 10 is improved, and the conversion efficiency of the heterojunction solar cell 10 is improved. In addition, the transition layer 120 is located on the side of the transparent conductive layer 114 away from the substrate 111, and the metal electrodes 130 located on the same side of the substrate 111 as the transition layer 120 are all disposed on the transition layer 120, so that the problem of poor adhesion between the prepared metal electrodes 130 and the transparent conductive layer 114 can be overcome, the probability of gate breakage of the metal electrodes 130 is reduced, the series resistance is reduced, the filling factor is further improved, and the conversion efficiency of the heterojunction solar cell 10 is further improved.
Embodiments of the third aspect of the present application provide a photovoltaic module comprising a heterojunction solar cell 10 according to any of the first aspects.
The photovoltaic module provided by the embodiment of the application comprises the heterojunction solar cell 10, wherein the transition layer 120 is laminated on the transparent conductive layer 114 on at least one side of the substrate 111, and the transition layer 120 is positioned on one side of the transparent conductive layer 114 away from the substrate 111, so that the transparent conductive layer 114 can be protected, and the probability of mechanical damage of the transparent conductive layer 114 in the manufacturing process of the metal electrode 130 is reduced; the transparent conductive layers 114 on two opposite sides of the substrate 111 are electrically connected with the metal electrode 130, and the metal electrode 130 on the same side of the substrate 111 as the transition layer 120 is disposed on the transition layer 120; the transition layer 120 is configured to be capable of at least partially blocking diffusion of the metal electrode 130 to the corresponding transparent conductive layer 114, so that contamination of the transparent conductive layer 114 and the heterojunction cell body 110 by the screen-printed metal electrode 130 can be reduced, and thus open-circuit voltage of the heterojunction solar cell 10 is improved, conversion efficiency of the heterojunction solar cell 10 is improved, and further efficiency of the photovoltaic module is improved. In addition, the transition layer 120 can block the erosion of water vapor, oxygen, sodium ions and acid, improve the weather resistance of the photovoltaic module and prolong the service life of the photovoltaic module.
In some embodiments, the photovoltaic module further includes a first substrate and a second substrate (not shown in the figure) disposed on opposite sides of the heterojunction solar cell 10, and the first substrate and one side surface of the heterojunction solar cell 10 are connected by a photovoltaic adhesive film (not shown in the figure); the second substrate is connected with the other side surface of the heterojunction solar cell 10 through a photovoltaic adhesive film.
In the process of manufacturing a photovoltaic module, it is generally necessary to laminate a first substrate, a photovoltaic film, a heterojunction solar cell 10, a photovoltaic film, and a second substrate to form the photovoltaic module. In the related art, the photovoltaic adhesive film is in direct contact with the transparent conductive layer 114, the adhesiveness between the photovoltaic adhesive film and the transparent conductive layer 114 is poor, and the transparent conductive layer 114 may be damaged in the lamination process, so that the efficiency of the photovoltaic module is easily affected. In this embodiment, the transition layer 120 is laminated on the transparent conductive layer 114 on at least one side of the substrate 111, and the transition layer 120 is located on the side of the transparent conductive layer 114 away from the substrate 111, so that the problem of poor adhesion between the photovoltaic film and the transparent conductive layer 114 can be overcome, the probability of damage to the transparent conductive layer 114 in the lamination process is reduced, and the efficiency of the photovoltaic module is further improved. In addition, the transition layer can block the erosion of water vapor, oxygen, sodium ions and acid, so that the weather resistance of the photovoltaic module is improved, and the service life of the photovoltaic module is prolonged.
In some embodiments, the material of the photovoltaic film may be one of ethylene-vinyl acetate copolymer (EVA), ethylene-octene copolymer (POE), and polyethylene foam (EPE).
Embodiments of the fourth aspect of the present application provide a photovoltaic system, including the photovoltaic module described in the third aspect, thereby improving the efficiency of the photovoltaic system and prolonging the service life of the photovoltaic system.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (11)
1. The heterojunction solar cell is characterized by comprising a heterojunction cell main body, a transition layer and a metal electrode;
the heterojunction battery main body comprises a substrate, wherein the surfaces of two opposite sides of the substrate are respectively provided with an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer in a laminated manner;
the transition layer is laminated on the transparent conductive layer on at least one side of the substrate, and the transition layer is positioned on one side of the transparent conductive layer, which is away from the substrate;
the transparent conductive layers on the two opposite sides of the substrate are electrically connected with metal electrodes, and the metal electrodes on the same side of the substrate as the transition layer are arranged on the transition layer;
wherein the transition layer is configured to at least partially block diffusion of the metal electrode to the corresponding transparent conductive layer.
2. The heterojunction solar cell of claim 1, wherein the transition layers are laminated on the transparent conductive layers on opposite sides of the substrate.
3. The heterojunction solar cell of claim 2, wherein a side of the metal electrode proximate to the substrate is in contact with a side surface of the transition layer facing away from the substrate; or alternatively
One side of the metal electrode, which is close to the substrate, is positioned in the transition layer, and a space exists between one side of the metal electrode, which is close to the substrate, and the surface of one side of the transition layer, which is close to the substrate.
4. The heterojunction solar cell of claim 3, wherein the transition layer is a tunneling oxide layer, an inorganic conductive layer, or an organic conductive layer.
5. Heterojunction solar cell according to claim 1 or 2, characterized in that,
one side of the metal electrode, which is close to the substrate, passes through the transition layer and is contacted with the transparent conductive layer.
6. The heterojunction solar cell of claim 5, wherein the transition layer is an inorganic layer or an organic layer.
7. The heterojunction solar cell of claim 1 or 2, wherein the transition layer is an inorganic layer, the thickness of each part on the transition layer is equal, and the thickness of the transition layer is 0.5nm-2nm; or alternatively
The transition layer is an organic layer, the thickness of each part of the transition layer is unequal, the minimum thickness of the transition layer is 0.5nm-20nm, and the maximum thickness of the transition layer is 10nm-2000nm.
8. The heterojunction solar cell of claim 1, wherein the doped semiconductor film is a doped amorphous silicon film, a microcrystalline silicon film or a nanocrystalline silicon film.
9. A method of fabricating a heterojunction solar cell, comprising:
providing a heterojunction battery body, wherein the heterojunction battery body comprises a substrate, and the surfaces of two opposite sides of the substrate are sequentially provided with an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer in a laminated manner;
forming a transition layer on the transparent conductive layer on at least one side of the substrate, the transition layer being on a side of the transparent conductive layer facing away from the substrate;
forming a metal electrode on one side of the transition layer, which is far away from the substrate, and electrically connecting the metal electrode with the transparent conductive layer;
wherein the transition layer is configured to at least partially block diffusion of the metal electrode to the corresponding transparent conductive layer.
10. A photovoltaic module comprising a heterojunction solar cell as claimed in any one of claims 1 to 8.
11. A photovoltaic system comprising the photovoltaic module of claim 10.
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