CN116913988A - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN116913988A CN116913988A CN202310855413.7A CN202310855413A CN116913988A CN 116913988 A CN116913988 A CN 116913988A CN 202310855413 A CN202310855413 A CN 202310855413A CN 116913988 A CN116913988 A CN 116913988A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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Abstract
The embodiment of the application relates to a solar cell and a photovoltaic module, wherein the solar cell comprises: a substrate; the grid line is positioned on the surface of the substrate and comprises auxiliary grids which are arranged at intervals along a first direction and main grids which are arranged at intervals along a second direction; an auxiliary transmission structure including a carrier transmission line and a carrier collection line, the carrier collection line being located in a wiring region of the substrate surface, the carrier transmission line electrically connecting the carrier collection line with at least one of the sub-gates adjacent thereto; the wiring area is an area surrounded by two adjacent main grids and any two adjacent auxiliary grids between the two adjacent main grids. At least is beneficial to improving the photoelectric conversion efficiency and yield of the solar cell and reducing the preparation cost of the solar cell.
Description
Technical Field
The embodiment of the application relates to the technical field of solar cells, in particular to a solar cell and a photovoltaic module.
Background
The fossil energy has the advantages of air pollution and limited reserves, and solar energy has the advantages of cleanness, no pollution, abundant resources and the like, so the solar energy is gradually becoming a core clean energy for replacing the fossil energy, and the solar cell becomes the development center of gravity for the utilization of the clean energy due to the good photoelectric conversion efficiency of the solar cell.
In the conventional solar cell, an electrode consists of a main grid and an auxiliary grid, carriers generated by the solar cell are collected by the auxiliary grid through a semiconductor transverse transmission layer, and then the carriers collected on the auxiliary grid are transmitted to the main grid for further collection and output. However, the current solution is prone to problems of limited solar cell yield or excessive cost.
Disclosure of Invention
The embodiment of the application provides a solar cell and a photovoltaic module, which are at least beneficial to reducing the cost of the solar cell and improving the yield of the solar cell.
The embodiment of the application provides a solar cell, which comprises: a substrate; the grid line is positioned on the surface of the substrate and comprises auxiliary grids which are arranged at intervals along a first direction and main grids which are arranged at intervals along a second direction; an auxiliary transmission structure including a carrier transmission line and a carrier collection line, the carrier collection line being located in a wiring region of the substrate surface, the carrier transmission line electrically connecting the carrier collection line with at least one of the sub-gates adjacent thereto; the wiring area is an area surrounded by two adjacent main grids and any two adjacent auxiliary grids between the two adjacent main grids.
In some embodiments, the substrate includes a semiconductor conductive layer and at least one passivation layer, the gate line is located on a surface of the passivation layer most spaced from the semiconductor conductive layer away from the semiconductor conductive layer, the auxiliary transmission structure is located on a surface of the passivation layer away from the semiconductor conductive layer, the carrier transmission line is attached to the passivation layer, and the carrier collection line penetrates through the passivation layer to be in ohmic contact with the semiconductor conductive layer.
In some embodiments, the semiconductor conductive layer includes a doped conductive layer, an emitter, or a carrier transport layer.
In some embodiments, in the second direction, a plurality of auxiliary transmission areas are arranged between two adjacent main grids in sequence, and each auxiliary transmission area comprises a plurality of auxiliary transmission structures.
In some embodiments, each of the routing regions in the auxiliary transmission region includes at least one of the auxiliary transmission structures, and the carrier collection line of each of the auxiliary transmission structures is electrically connected with two adjacent ones of the sub-gates through the corresponding carrier transmission line.
In some embodiments, the number of auxiliary transmission areas is 1 to 50.
In some embodiments, the wiring regions where the auxiliary transmission structures are located in each of the auxiliary transmission regions are not adjacent to each other, and the wiring regions where the auxiliary transmission structures are located in two adjacent auxiliary transmission regions are alternately arranged.
In some embodiments, the extension direction of the carrier collection line and the extension direction of the sub gate are parallel or perpendicular to each other.
In some embodiments, in the first direction, the intervals between the carrier collection line and the adjacent two of the sub-gates are a first interval and a second interval, respectively, and a ratio of the first interval to the second interval is 0.5 to 1.5.
In some embodiments, a spacing between the carrier collection line and the adjacent sub-gate in the first direction is 0.6mm to 1.25mm.
In some embodiments, the carrier-collection line has a width of 20 μm to 100 μm in a direction perpendicular to a direction in which the carrier-collection line extends.
In some embodiments, the carrier-collection line has a length of 0.2mm to 3mm in an extending direction along the carrier-collection line.
In some embodiments, the spacing between adjacent ones of the carrier-collection lines in the second direction is 50 μm to 2mm.
In some embodiments, the spacing between two adjacent sub-gates in the first direction is 1.4mm to 2.5mm.
In some embodiments, the carrier transport line has a width of 20 μm to 40 μm in a direction perpendicular to a direction in which the carrier transport line extends.
The corresponding embodiment of the application also provides a photovoltaic module, which comprises: the battery string is formed by connecting a plurality of solar batteries; an encapsulation layer for covering the surface of the battery string; and the cover plate is used for covering the surface, far away from the battery strings, of the packaging layer.
The technical scheme provided by the embodiment of the application has at least the following advantages:
in the solar cell provided by the embodiment of the application, a plurality of wiring areas are defined on the surface of the solar cell, each wiring area is formed by surrounding two adjacent main grids and any two adjacent auxiliary grids between the two adjacent main grids, an auxiliary transmission structure is arranged in each wiring area, the auxiliary transmission structure is formed by a carrier collecting line and a carrier transmission line, the carrier collecting line is used for collecting carriers in the wiring area, the carrier transmission line is used for electrically connecting the carrier collecting line with at least one adjacent auxiliary grid, and the carriers collected by the carrier collecting line are collected on the auxiliary grids. The carrier collection lines arranged in each wiring area on the surface of the solar cell collect carriers between adjacent auxiliary grids, the carriers are collected onto the auxiliary grids through the carrier transmission lines, the auxiliary transmission structure is used for assisting the auxiliary grids to collect the carriers between the adjacent auxiliary grids, the number of the carriers collected through the transverse transmission of the semiconductor conductive layer and the carrier collection loss of the auxiliary grids are reduced, the carrier collection capacity of the solar cell to the adjacent auxiliary grids is improved, the interval between the adjacent auxiliary grids is increased, the number of the auxiliary grids on the surface of the solar cell and the manufacturing cost of the solar cell are reduced, and the reduction of the yield of the solar cell caused by the reduction of the grid line width in a dense grid state is avoided.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, which are not to be construed as limiting the embodiments unless specifically indicated otherwise.
Fig. 1 is a top view of a solar cell according to an embodiment of the present application;
fig. 2 is a cross-sectional view of a solar cell according to an embodiment of the present application;
FIG. 3 is a partial top view of a solar cell according to an embodiment of the present application;
FIG. 4 is a partial top view of another solar cell according to an embodiment of the present application;
FIG. 5 is a partial top view of yet another solar cell according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a photovoltaic module according to another embodiment of the present application.
Detailed Description
As known from the background art, in the current solar cell, in order to reduce the carrier collection loss, a dense grid mode is generally adopted to perform grid line arrangement, that is, the interval between adjacent sub-grids is set in a relatively small range, so that the transverse transmission resistance of carriers collected onto the sub-grids between the adjacent sub-grids is reduced. The consumption of electrode slurry is high under the condition that the width of the grid line is not reduced in a dense grid mode, and the preparation cost of the solar cell is high; when the width of the gate line is reduced, the electrode paste is easily printed with a false mark, and thus the gate is broken or the gate line is in poor contact, and the yield of the solar cell is reduced.
An embodiment of the application provides a solar cell, wherein a plurality of wiring areas are defined on the surface of the solar cell, each wiring area is formed by surrounding two adjacent main grids and any two adjacent auxiliary grids between the two adjacent main grids, an auxiliary transmission structure is arranged in each wiring area, the auxiliary transmission structure is composed of a carrier collecting line and a carrier transmission line, the carrier collecting line is used for collecting carriers in the wiring area, the carrier transmission line is used for electrically connecting the carrier collecting line with at least one adjacent auxiliary grid, and the carriers collected by the carrier collecting line are collected on the auxiliary grids. The carrier collection lines arranged in each wiring area collect carriers between adjacent auxiliary grids, the carriers are collected onto the auxiliary grids through the carrier transmission lines, the auxiliary transmission structure is used for assisting the auxiliary grids to collect the carriers between the adjacent auxiliary grids, the number of the carriers collected through transverse transmission of the semiconductor conductive layer and the carrier collection loss of the auxiliary grids are reduced, the carrier collection capacity of the solar cell between the adjacent auxiliary grids is improved, the increase of the interval between the adjacent auxiliary grids is facilitated, the number of the auxiliary grids on the surface of the solar cell and the manufacturing cost of the solar cell are reduced, and the reduction of the yield of the cell caused by the reduction of the grid line width in a dense grid state is avoided.
Embodiments of the present application will be described in detail below with reference to the attached drawings. However, it will be understood by those of ordinary skill in the art that in various embodiments of the present application, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the claimed technical solution of the present application can be realized without these technical details and various changes and modifications based on the following embodiments.
An embodiment of the present application provides a solar cell, referring to fig. 1, wherein an X direction is a first direction and a Y direction is a second direction.
The solar cell includes: a substrate 101; a gate line 102, the gate line 102 being on a surface of the substrate 101, the gate line 102 including sub-gates 121 arranged at intervals along a first direction and main gates 122 arranged at intervals along a second direction; an auxiliary transmission structure 103, the auxiliary transmission structure 103 including a carrier transmission line 131 and a carrier collection line 132, the carrier collection line 132 being located in the wiring region 111 of the surface of the substrate 101, the carrier transmission line 131 electrically connecting the carrier collection line 132 with at least one adjacent sub-gate 121; the wiring region 111 is a region surrounded by two adjacent main gates 122 and any two adjacent sub-gates 121 located between the two adjacent main gates 122.
In the process of preparing the photo-solar cell, an area surrounded by two adjacent main grids 122 and any two adjacent auxiliary grids 121 between the two adjacent main grids 122 is taken as a wiring area 111, and an auxiliary transmission structure 103 formed by a carrier collection line 132 and a carrier transmission line 131 is arranged in the wiring area 111, so that carrier collection between the adjacent auxiliary grids 121 can be realized not only through carrier reaching the auxiliary grids 121 through transverse transmission in a semiconductor conductive layer, but also through the carrier collection line 132, carrier between the adjacent auxiliary grids 121 can be collected, and carrier collected by the carrier collection line 132 is transmitted to the auxiliary grids 121 through the carrier transmission line 131 electrically connecting the carrier collection line 132 and the auxiliary grids 121.
The auxiliary transmission structure 103 is used for collecting carriers between adjacent auxiliary grids 121, the collected carriers are collected to the auxiliary grids 121 communicated with the auxiliary transmission structure 103, the auxiliary transmission structure 103 with stronger electric conduction capacity is used for collecting and transmitting the carriers to the auxiliary grids 121, the collection loss of the carriers between the adjacent auxiliary grids 121 is reduced, the collection efficiency of the carriers between the adjacent auxiliary grids 121 and the photoelectric conversion efficiency of the solar cell are improved, the interval between the adjacent auxiliary grids 121 is increased, the number of the auxiliary grids 121 arranged on the surface of the solar cell is reduced, and therefore the preparation cost of the solar cell is reduced. Meanwhile, since the width of the auxiliary grid 121 does not need to be increased or reduced, the problem of grid breakage or poor contact of the grid line 102 caused by poor printing of electrode slurry due to the change of the size of the auxiliary grid 121 is reduced, and the yield of the solar cell is improved.
The first direction X and the second direction Y may be perpendicular to each other, or may have an included angle smaller than 90 degrees, for example, 60 degrees, 45 degrees, 30 degrees, or the like, and the first direction X and the second direction Y may not be the same direction. For convenience of explanation and understanding, the embodiment uses the case that the first direction X and the second direction Y are perpendicular to each other as an example, and in a specific application, the angle between the first direction X and the second direction Y may be adjusted according to the actual needs and the application scenario, which is not limited in this embodiment.
In some embodiments, the material of the substrate 101 may be an elemental semiconductor material. Specifically, the elemental semiconductor material is composed of a single element, which may be silicon or silicon, for example. The elemental semiconductor material may be in a single crystal state, a polycrystalline state, an amorphous state, or a microcrystalline state (a state having both a single crystal state and an amorphous state, referred to as a microcrystalline state), and for example, silicon may be at least one of single crystal silicon, polycrystalline silicon, amorphous silicon, or microcrystalline silicon.
The material of the substrate 101 may also be a compound semiconductor material. Common compound semiconductor materials include, but are not limited to, silicon germanium, silicon carbide, gallium arsenide, indium gallium, perovskite, cadmium telluride, copper indium selenium, and the like. The substrate 101 may also be a sapphire substrate, a silicon-on-insulator substrate, or a germanium-on-insulator substrate.
The substrate 101 may be an N-type semiconductor substrate or a P-type semiconductor substrate. The N-type semiconductor substrate is doped with an N-type doping element, which may be any of v group elements such As phosphorus (P) element, bismuth (Bi) element, antimony (Sb) element, and arsenic (As) element. The P-type semiconductor substrate is doped with a P-type element, and the P-type doped element may be any one of group iii elements such as boron (B) element, aluminum (Al) element, gallium (Ga) element, and indium (I n) element.
In addition, the number of the carrier collection lines 132 included in each auxiliary transmission structure 103 may be one or 2 or more, which are arranged at intervals along the first direction, and the number of the carrier collection lines 132 included in each auxiliary transmission structure 103 is not limited in the embodiment of the present application.
Referring to fig. 1 and 2, fig. 2 is a cross-sectional view of a solar cell along the AA1 direction. In some embodiments, the substrate 101 includes a semiconductor conductive layer 104 and at least one passivation layer 105, and the gate line 102 is located on a surface of the passivation layer 105 that is most spaced from the semiconductor conductive layer 104 away from the semiconductor conductive layer 104; the auxiliary transmission structure 103 is located on a surface of the passivation layer 105 away from the semiconductor conductive layer 104, the carrier transmission line 131 is attached on the passivation layer 105, and the carrier collection line 132 penetrates the passivation layer 105 to be in ohmic contact with the semiconductor conductive layer 104.
Along the AA1 direction, the substrate 101 includes a semiconductor conductive layer 104 and at least one passivation layer 105 stacked, and the carrier collection line 132 has a main function of collecting carriers located between adjacent sub-gates 121, and the carrier transfer line 131 has a main function of collecting carriers collected by the carrier collection line 132 onto the sub-gates 121. Accordingly, the carrier collection line 132 may penetrate the passivation layer 105 to make ohmic contact with the semiconductor conductive layer 104 under the passivation layer 105, and the carrier transfer line 131 may not penetrate the passivation layer 105 to make contact with the semiconductor conductive layer 104, but be directly attached to the passivation layer 105, and electrically connect the carrier collection line 132 with the adjacent at least one sub-gate 121. By arranging the carrier collection line 132 to penetrate through the passivation layer 105 and make ohmic contact with the semiconductor conductive layer 104, it is ensured that the carrier collection line 132 can collect carriers on the semiconductor conductive layer 104 with high efficiency, and arranging the carrier transmission line 131 to be attached to the surface of the passivation layer 105 and not make ohmic contact with the semiconductor conductive layer 104 can reduce the die opening area of the passivation layer 105, thereby reducing the open circuit voltage loss of the solar cell and enhancing the photoelectric conversion efficiency of the solar cell.
In addition, when the auxiliary transmission structure 103 is disposed, the carrier collection line 132 and the carrier transmission line 131 may both penetrate through the passivation layer 105 to form ohmic contact with the semiconductor conductive layer 104, so that the carrier collection capability of the auxiliary transmission structure 103 is further improved by utilizing the characteristic that the carrier transmission line 131 also has the carrier collection capability, and thus the carrier collection loss of the solar cell is reduced.
In some embodiments, the semiconductive conductive layer 104 includes a doped conductive layer, an emitter, or a carrier transport layer. The main function of the auxiliary transmission structure 103 is to assist the sub-gate 121 in carrier collection, and thus can be applied in various solar cells, such as TOPCON cells (Tunnel Oxide Passivated Contact, tunnel oxide passivation contact cells), PERC cells (passivation emitter and back cells, passivated emitter and real cell), IBC cells (cross back electrode contact cells, interdigitated Back Contact), or perovskite thin film solar cells, etc.
Since the grid lines 102 can be disposed on the front and back sides of the solar cell except the IBC cell, the auxiliary transmission structure 103 can also be disposed on the front and/or back sides of the solar cell, and in the case where the auxiliary transmission structure 103 is disposed on the front side of the solar cell, for example, the semiconductor conductive layer in ohmic contact with the carrier collection line 132 can be an emitter; in the case where the auxiliary transmission structure 103 is provided on the back surface of the solar cell, the semiconductor conductive layer in ohmic contact with the carrier collection line 132 may be a doped conductive layer. In the case where the solar cell is a perovskite thin film solar cell, the semiconductor conductive layer in ohmic contact with the carrier collection line 132 may be a hole transport layer and/or an electron transport layer among the carrier transport layers.
The front surface and the back surface of the solar cell refer to two opposite surfaces on the solar cell, and in the case that the solar cell is a single-sided cell, the front surface can be regarded as a light receiving surface for receiving incident light, and the back surface can be regarded as a back surface; when the solar cell is a double-sided cell, the surface on the side where the receiving degree of the incident light is weak may be regarded as the back surface, and the surface on the side where the receiving degree of the incident light is strong may be regarded as the front surface.
Through setting up auxiliary transmission structure 103 in the front and/or the back of solar cell, the carrier collecting capacity of effectual reinforcing solar cell especially only sets up auxiliary transmission structure 103 in the solar cell back, when avoiding auxiliary transmission structure 103 to the shielding of incident light as far as possible, can also utilize auxiliary transmission structure 103 to incident and be reflected the light that will follow the solar cell back emergence in the solar cell, further improves solar cell's light absorption capacity, and then increases solar cell's photoelectric conversion efficiency.
In some embodiments, the extension direction of the carrier collection line 132 and the extension direction of the sub-gate 121 are parallel or perpendicular to each other. When the carrier collection line 132 is provided, the carrier collection line 132 may have a collection capability for carriers between two adjacent sub-gates 121 corresponding to the wiring region 111 where it is located, and therefore, the extending direction of the carrier collection line 132 provided in the wiring region 111 may be set to be parallel to any direction of the solar cell surface.
When the extending direction of the carrier collection line 132 and the extending direction of the sub-gate 121 are set to be perpendicular to each other, the interval between the carrier collection line 132 and the adjacent sub-gate 121 is shortest, the carrier transfer line 131 can be set to be short, and the transfer distance of carriers collected on the carrier collection line 132 to the sub-gate 121 is also small, so that the carrier transfer loss of the carrier collection line 132 can be reduced.
When the extending direction of the carrier collection line 132 and the extending direction of the sub-gate 121 are set to be parallel to each other, the carrier collection line 132 can have a good collection capability for carriers located between two adjacent sub-gates 121 and in a specific region fixed at an interval between the two adjacent sub-gates 121, thereby reducing the collection loss of carriers in the specific region and improving the carrier collection capability of the solar cell in a targeted manner.
In addition, the extending directions of the carrier collection lines 132 in the wiring regions 111 on the solar cell surface may be the same or different, and the positional relationship between the extending directions of the carrier collection lines 132 and the extending directions of the sub-gates 121 may be the same or different, which is not limited in the embodiment of the present application.
In addition, the extending direction of the carrier transmission line 131 may be any direction parallel to the surface of the solar cell, for example, an angle between the extending direction of the carrier transmission line 131 and the extending direction of the sub-gate 121 may be set to 30 °, 45 ° or 60 °, and the like, and the carrier transmission line 131 may reduce the interval with the sub-gate 121 as much as possible while controlling the distance with the carriers in the specific region to be within a small range, shortening the carrier transmission distance, and securing the carrier collecting capability of the auxiliary transmission structure 103 in the specific region as much as possible, taking the angle of 45 ° as an example.
In some embodiments, the intervals between the carrier collection line 132 and the adjacent two sub-gates 121 in the first direction are a first interval and a second interval, respectively, and the ratio of the first interval to the second interval is 0.5 to 1.5.
The interval between the carrier collection line 132 and the adjacent two sub-gates 121 in the first direction refers to minimum distances d1 and d2 between any point on the carrier collection line 132 and the adjacent two sub-gates 121. In the first direction, the wiring region 111 can be regarded as being constituted of a central region and edge regions located on both sides of the central region, and since the distance of carriers in the central region along the semiconductor conductive layer 104 to the sub-gate 121 is long, the sub-gate 121 is poor in the collecting ability of carriers in the central region and is large in the carrier collecting loss. Therefore, the carrier collection line 132 may be used to enhance the collection capability of the gate line 102 to the carrier in the central area, and in the case where the interval between any one of the sub-gates 121 corresponding to the carrier collection line 132 and the wiring area 111 is too small, the carrier collection line 132 may be disposed in the edge area, and the collection capability of the carrier in the central area is limited, so that the collection efficiency of the sub-gate 121 to the carrier in the central area cannot be effectively enhanced.
Accordingly, in the first direction, the ratio of the interval between the carrier collection line 132 and the adjacent two sub-gates 121 may be set in the range of 0.5 to 1.5, for example, the ratio of the first interval and the second interval may be set to 0.6, 0.7, 0.85, 1, 1.2, 1.35, or the like. By setting the ratio of the first interval to the second interval in a proper range, it is ensured that the carrier collection line 132 can be disposed in the central area between two adjacent sub-grids 121 as much as possible, the collection efficiency of the sub-grids 121 on carriers farther from the sub-grids 121 is improved, and further the carrier collection loss of the solar cell is reduced, and the photoelectric conversion efficiency of the solar cell is improved. In addition, the ratio of the intervals between the carrier collection line 132 and the adjacent two sub-gates 121 in the different wiring regions 111 may be the same or different, and may be adjusted according to specific needs.
In some embodiments, the carrier-collection line 132 has a width of 20 μm to 100 μm in a direction perpendicular to the direction in which the carrier-collection line 132 extends. The width of the carrier collection line 132 in the direction perpendicular to the extending direction of the carrier collection line 132 refers to the interval w1 between the opposite sides of the carrier collection line 132. When the carrier collection line 132 is too wide, the formation of the carrier collection line 132 causes excessive damage to the passivation layer 105, and the open circuit voltage loss of the solar cell is large, which results in a decrease in the photoelectric conversion efficiency of the solar cell. In the case where the width of the carrier collection line 132 is too small, the contact resistance between the carrier collection line 132 and the solar cell is large, and the carrier collection loss of the carrier collection line 132 itself is too large, so that the carrier collection efficiency of the solar cell cannot be effectively improved.
Accordingly, in the direction perpendicular to the extending direction of the carrier-collection line 132, the width of the carrier-collection line 132 may be set in the range of 20 μm to 100 μm, for example, the width of the carrier-collection line 132 may be set to 25 μm, 30 μm, 40 μm, 50 μm, 65 μm, 75 μm, 80 μm, or the like. The width of the carrier collecting line 132 is set in a proper range, so that the carrier collecting capacity of the solar cell is effectively improved, excessive die sinking damage to the solar cell is avoided, the voltage sinking loss of the solar cell is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
In the case where the solar cell surface includes a plurality of carrier collection lines 132, the widths of the carrier collection lines 132 may be the same or different, and the widths of the carrier collection lines 132 may be adjusted according to specific needs.
In some embodiments, the length of the carrier-collection line 132 is 0.2mm to 3mm in the extending direction along the carrier-collection line 132. The length of the carrier collection line 132 refers to the interval L between opposite sides of the carrier collection line 132 in the extending direction. When the length of the carrier collection line 132 is too short, the surface area of the wiring region 111 covered by the carrier collection line 132 is small, and the collection ability of carriers in a large region of the wiring region 111 is poor, so that the carrier collection ability of the solar cell cannot be effectively improved. If the length of the carrier collection line 132 is too long, the formation of the carrier collection line 132 causes excessive damage to the passivation layer 105, and the open-circuit voltage loss of the solar cell is large, which results in a decrease in the photoelectric conversion efficiency of the solar cell.
Accordingly, in the extending direction along the carrier collection line 132, the length of the carrier collection line 132 may be set in a range of 0.2mm to 3mm, for example, the length of the carrier collection line 132 may be set to 0.25mm, 0.3mm, 0.5mm, 0.75mm, 1mm, 1.5mm, 2mm, 2.25mm, 2.75mm, or the like. The length of the carrier collecting line 132 is set in a proper range, so that the carrier collecting capacity of the solar cell is effectively improved, excessive mold opening damage to the solar cell is avoided, the pressure opening loss of the solar cell is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
In the case where the solar cell surface includes a plurality of carrier collection lines 132, the lengths of the carrier collection lines 132 may be the same or different, and the lengths of the carrier collection lines 132 may be adjusted according to specific needs.
In some embodiments, the carrier transmission line 131 has a width of 20 μm to 40 μm in a direction perpendicular to the extending direction of the carrier transmission line 131. The width of the carrier transfer line 131 refers to the interval w2 between opposite sides of the carrier transfer line 131 in the direction perpendicular to the extending direction. The main function of the carrier transmission line 131 is to collect the carriers collected on the carrier collection line 132 onto the sub-gate 121, and in the case that the width of the carrier transmission line 131 is too small, the contact resistance between the carrier transmission line 131 and the carrier collection line 132 and the sub-gate 121 is large, and in the process of collecting the carriers on the carrier collection line 132 onto the sub-gate 121, the carrier transmission loss is large, so that the auxiliary transmission structure 103 cannot effectively improve the photoelectric conversion efficiency of the solar cell. In the case where the width of the carrier transmission line 131 is too large, the area of the solar cell surface covered by the carrier transmission line 131 is too large, and the shadowing effect on the solar cell is too large, which may cause the influence of the carrier collection efficiency increased by the auxiliary transmission structure 103 to be smaller than the influence of the shadowing effect, and further cause the photoelectric conversion efficiency of the solar cell to be reduced.
Accordingly, in the direction perpendicular to the extending direction of the carrier transfer line 131, the width of the carrier transfer line 131 may be set in the range of 20 μm to 40 μm, for example, the width of the carrier transfer line 131 may be set to 22.5 μm, 25 μm, 27.5 μm, 30 μm, 35 μm, or the like. The carrier transmission loss of the carrier transmission line 131 is effectively reduced, the carrier collection efficiency of the solar cell is improved, the shielding effect of the auxiliary transmission structure 103 on the solar cell is reduced as much as possible, and the photoelectric conversion efficiency of the solar cell is improved.
In the case where the solar cell surface includes a plurality of carrier transmission lines 131, the widths of the carrier transmission lines 131 may be the same or different, and the widths of the carrier transmission lines 131 may be adjusted according to specific needs.
In some embodiments, the height of the carrier collection line 132 protruding from the solar cell surface is 2 μm to 20 μm. The height at which the carrier collection line 132 protrudes from the solar cell surface refers to the maximum separation between any point on the exposed surface of the carrier collection line 132 and the solar cell surface. In the case where the height of the carrier collection line 132 protruding from the solar cell surface is too high, the slurry required for the preparation of the carrier collection line 132 is too much, and the preparation cost is too high; in the case where the height of the carrier collection line 132 protruding from the solar cell surface is too low, the contact resistance of the carrier collection line 132 and the carrier transmission line 131 is too large and the carrier transmission loss is high, and therefore, the height of the carrier collection line protruding from the solar cell surface may be set to 2.5 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12.5 μm, 15 μm, or the like.
In some embodiments, the height of the carrier transmission line 131 protruding from the solar cell surface is 5 μm to 50 μm. Similar to the carrier collection line 132, setting the height of the carrier transmission line 131 protruding from the solar cell surface to 6 μm, 7.5 μm, 10 μm, 15 μm, 25 μm, 40 μm, or the like can avoid the excessive manufacturing cost of the carrier transmission line 131, and simultaneously reduce the contact resistance of the carrier transmission line 131 with the carrier collection line 132 and the sub-gate 121, reducing the carrier collection loss.
In some embodiments, the spacing between two adjacent sub-gates 121 in the first direction is 1.4mm to 2.5mm. The interval between the adjacent two sub-gates 121 refers to the interval w3 between both sides of the two adjacent sub-gates 121 toward each other in the first direction. The larger the interval between adjacent sub-gates 121, the larger the maximum interval between carriers that the sub-gate 121 needs to collect and the sub-gate 121 in the first direction, and the carrier collection loss of the sub-gate 121 increases accordingly.
In the case where the interval between two adjacent sub-gates 121 is too small, in the first direction, the interval between the carriers to be collected and the sub-gates 121 is small, the loss of collecting by the lateral transmission of the carriers in the semiconductor conductive layer 104 and the loss of collecting by the auxiliary transmission structure 103 are not much different, which may cause the influence of the shielding of the auxiliary transmission structure 103 on the incident light on the photoelectric conversion efficiency to be greater than the influence of the carrier collection efficiency to the photoelectric conversion efficiency to be improved, the photoelectric conversion efficiency of the solar cell cannot be improved, and additional costs may be brought. In the case where the interval between two adjacent sub-gates 121 is too large, the interval between the carriers to be collected and the sub-gate 121 is large in the first direction, the sub-gate 121 has low collection efficiency for most of the carriers, and the improvement of the carrier collection efficiency by the auxiliary transmission structure 103 may be smaller than the decrease of the carrier collection efficiency caused by the excessive interval of the sub-gate 121, thereby resulting in the decrease of the photoelectric conversion efficiency of the solar cell.
Accordingly, in the first direction, the interval between the adjacent two sub-gates 121 may be set in the range of 1.4mm to 2.5mm, for example, the interval between the adjacent two sub-gates 121 may be set to 1.5mm, 1.65mm, 1.8mm, 2mm, 2.25mm, 2.4mm, or the like. The interval between two adjacent sub-grids 121 is set in a proper range, so that the number of the sub-grids 121 on the surface of the solar cell is reduced, the manufacturing cost of the grid line 102 and the solar cell is reduced, the shielding of the grid line 102 on incident light is reduced, and meanwhile, the carrier collection efficiency of the solar cell is improved by utilizing the auxiliary transmission structure 103, so that the photoelectric conversion efficiency of the solar cell is increased.
In some embodiments, the spacing between the carrier collection line 132 and the adjacent sub-gate 121 in the first direction is 0.6mm to 1.25mm. The interval between the carrier collection line 132 and the adjacent sub-gate 121 refers to the minimum distance in the first direction between any point on the carrier collection line 132 and any point on the adjacent sub-gate 121. The sub-gate 121 is weaker in the collecting ability of carriers farther from the sub-gate 121 in the first direction, and therefore, the carrier collecting line 132 may be disposed in the intermediate region between two adjacent sub-gates 121 in the first direction, thereby improving the carrier collecting ability of the solar cell as much as possible.
In the case where the interval between the carrier collection line 132 and the adjacent sub-gate 121 is too small, the carrier collection ability of the carrier collection line 132 to the carrier having a larger interval with the adjacent sub-gate 121 is also poor, and even if the carrier collection is assisted by the auxiliary transmission structure 103, the carrier collection ability of the solar cell is also limited, and even the influence on the photoelectric conversion efficiency of the solar cell is smaller than the influence of the auxiliary transmission structure 103 on the shielding of the incident light. In the case where the interval between the carrier collection line 132 and the adjacent sub-gate 121 is too large, this means that the interval between the adjacent sub-gates 121 is too large, the carrier loss in the process of the auxiliary transmission structure 103 transmitting carriers to the sub-gate 121 is large, and the improvement of the carrier transmission efficiency by the auxiliary transmission structure 103 may be smaller than the decrease of the carrier collection efficiency due to the too large interval between the adjacent sub-gates 121.
Accordingly, the interval between the carrier collection line 132 and the adjacent sub-gate 121 may be set between 0.6mm and 1.25mm, for example, 0.65mm, 0.75mm, 0.8mm, 0.9mm, 1mm, 1.125mm, or 1.2mm, etc., in the first direction. The interval between the carrier collection line 132 and the adjacent sub-gate 121 is set in a proper range, effectively improving the carrier collection efficiency of the solar cell.
Referring to fig. 1 to 3, where fig. 3 is a partial top view of a solar cell between any three main grids 122, in some embodiments, a plurality of auxiliary transmission regions 133 are included between two adjacent main grids 122 along the second direction, and each auxiliary transmission region 133 includes a plurality of auxiliary transmission structures 103.
The interval between two adjacent main gates 122 is generally large in the second direction, and thus, the region between adjacent main gates 122 may be divided into a plurality of auxiliary transfer regions 133 arranged in sequence in the second direction. In the first direction, each auxiliary transmission region 133 passes through the plurality of wiring regions 111, and thus, an area surrounded by an edge of the auxiliary transmission region 133 and any two adjacent sub-gates 121 through which the auxiliary transmission region 133 passes may be used as a basic unit for the auxiliary transmission structure 103, and the plurality of auxiliary transmission structures 103 may be disposed in each auxiliary transmission region 133, thereby enhancing the collection capability of carriers between any two adjacent sub-gates 121 in each auxiliary transmission region 133 as much as possible.
According to the edges of the auxiliary transmission areas 133 and the area groups surrounded by any two adjacent sub-grids 121 through which the auxiliary transmission areas 133 pass, a plurality of carrier collection lines 132 which are arranged at intervals are utilized to collect carriers between the adjacent sub-grids 121, so that the total length of the carrier collection lines 132 in each wiring area 111 along the extending direction is reduced, and the mold opening damage of the solar cell and the preparation cost of the carrier collection lines 132 are reduced; since the plurality of auxiliary transmission structures 103 are disposed in each auxiliary transmission region 133, the carrier collection line 132 can enhance the carrier collection capability of the sub-gate 121 as much as possible, further enhancing the photoelectric conversion efficiency of the solar cell.
In some embodiments, the number of auxiliary transmission areas 133 is 1 to 50. In the case where the number of the auxiliary transmission regions 133 is excessively large, since the interval between adjacent main grids 122 in the first direction is constant, the width of each auxiliary transmission region 133 in the first direction is small, the interval between the auxiliary transmission structures 103 in the adjacent two auxiliary transmission regions 133 is excessively small, the total length of the carrier collection line 132 in the extending direction in each auxiliary transmission structure 103 may be larger than the total length of the reduced sub-grid 121 in the extending direction, resulting in an increase in open-circuit voltage loss of the solar cell, and since the auxiliary transmission structure 103 further includes the carrier transmission line 131, the incident light shielding due to the arrangement of the auxiliary transmission structure 103 is excessively large, affecting the photoelectric conversion efficiency of the solar cell.
Accordingly, the number of the auxiliary transmission regions 133 between the adjacent two main gates 122 may be set in the range of 1 to 50, for example, the number of the auxiliary transmission regions 133 between the adjacent main gates 122 may be set to 2, 3, 5, 8, 10, 20, 35, 40, or the like. By setting the number of the auxiliary transmission regions 133 within an appropriate range, the shielding effect of the auxiliary transmission structure 103 on the incident light and the open-circuit voltage loss of the solar cell are reduced, and at the same time, the collection capacity of the sub-gate 121 for carriers is effectively improved, and the photoelectric conversion efficiency of the solar cell is improved.
In addition, the solar cell surface includes a plurality of main grids 122, and the number of auxiliary transmission regions 133 disposed between any two adjacent main grids 122 may be the same or different.
Referring to fig. 1-4, wherein fig. 4 is a partial top view of a solar cell surface between any three primary grids 122. In some embodiments, at least one auxiliary transmission structure 103 is included in each wiring region 111 in the auxiliary transmission region 133, and the carrier collection line 132 of each auxiliary transmission structure 103 is electrically connected with the adjacent two sub-gates 121 through the corresponding carrier transmission line 131.
In the process of setting the auxiliary transmission structures 103, the edge of the auxiliary transmission region 133 and the region group surrounded by any two adjacent sub-gates 121 through which the auxiliary transmission region 133 passes may be taken as basic units, at least one auxiliary transmission structure 103 is respectively set in each wiring region 111 through which each auxiliary transmission region 133 passes, and the carrier collection line 132 and the two sub-gates 121 adjacent to the carrier collection line 132 are electrically connected by using the carrier transmission line 131 in the auxiliary transmission structure 103.
When the arrangement of the auxiliary transmission structures 103 in the auxiliary transmission region 133 is performed, the carrier transmission lines 131 of the auxiliary transmission structures 103 may be arranged on the same line so that the auxiliary transmission structures 103 communicate and form a structure similar to the main gate line, or the carrier transmission lines 131 may be arranged on different lines. When the carrier collection lines 132 of the auxiliary transmission structures 103 are provided, the carrier collection lines 132 may be provided at the same position as the interval between the adjacent two sub-gates 121, or the carrier collection lines 132 may be provided at any position between the two adjacent sub-gates 121. Only one auxiliary transmission structure 103 may be provided in each of the wiring regions 111 through which the auxiliary transmission region 133 passes, or 2 or more auxiliary transmission structures 103 may be provided.
By providing at least one auxiliary transmission structure 103 in each wiring region 111 through which the auxiliary transmission region 133 passes, the auxiliary gate 121 can efficiently collect carriers farther from the auxiliary gate 121 through the auxiliary transmission structure 103, thereby reducing carrier collection loss of the auxiliary gate 121 and improving photoelectric conversion efficiency of the solar cell.
In some embodiments, the spacing between adjacent carrier collection lines 132 is 50 μm to 2mm in the second direction. The interval between adjacent carrier-collection lines 132 refers to an interval between opposite sides of two carrier-collection lines 132 adjacent in the second direction. In the case where a plurality of carrier collection lines 132 are provided in the wiring region 111 at intervals in the second direction, when the intervals between adjacent carrier collection lines 132 in the second direction are too small, the density of the carrier collection lines 132 is too large, and the mold opening damage of the solar cell is too high; when the interval between the adjacent carrier collection lines 132 in the second direction is too large, the carrier collection ability of the carrier collection lines 132 to the partial region of the wiring region 111 is poor, and the carrier collection ability of the solar cell cannot be effectively improved.
Accordingly, the interval of adjacent carrier collection lines 132 in the second direction may be set in a range of 50 μm to 2mm, for example, the interval is set to 65 μm, 75 μm, 100 μm, 180 μm, 250 μm, 500 μm, 750 μm, 1mm, 1.25mm, 1.5mm, or the like. By setting the interval between the carrier collection lines 132 adjacent in the second direction within an appropriate range, the die opening loss of the solar cell is reduced while the carrier collection capability of the solar cell is effectively improved.
Referring to fig. 1-5, wherein fig. 5 is a partial top view between any three main grids 122 of a solar cell surface. In some embodiments, the wiring regions 111 of each auxiliary transmission region 133 where the auxiliary transmission structures 103 are located are not adjacent to each other, and the wiring regions 111 of the adjacent two auxiliary transmission regions 133 where the auxiliary transmission structures 103 are located are alternately arranged.
In the process of setting the auxiliary transmission structures 103, an area group surrounded by the edge of the auxiliary transmission area 133 and any two adjacent sub-gates 121 through which the auxiliary transmission area 133 passes may be taken as a basic unit, among the wiring areas 111 through which each auxiliary transmission area 133 passes, a plurality of wiring areas 111 that are not adjacent to each other in the first direction are determined as target wiring areas, and then at least one auxiliary transmission structure 103 is set in each target wiring area. Further, in determining the target wiring area in the two adjacent auxiliary transmission areas 133, after one wiring area 111 is set as the target wiring area of the first auxiliary transmission area 133, another wiring area 111 adjacent to the wiring area 111 as the first auxiliary transmission area 133 is set as the target wiring area of the second auxiliary transmission area 133 in determining the target wiring area in the second auxiliary transmission area 133 adjacent to the first auxiliary transmission area 133 such that the wiring areas 111 as the target wiring areas in the adjacent two auxiliary transmission areas 133 are alternately arranged.
By selecting a group of mutually non-adjacent wiring areas 111 as target wiring areas in the wiring areas 111 where the auxiliary transmission areas 133 pass, the number of the auxiliary transmission structures 103 in each auxiliary transmission area 133 is reduced, so that the light shielding and mold opening damage to the solar cells caused by the arrangement of the auxiliary transmission structures 103 are reduced, and the number of the solar cells is increased; the wiring regions 111 included in the target wiring regions of the adjacent auxiliary transmission regions 133 are alternately arranged, so that carriers of a portion of the wiring regions 111 where the auxiliary transmission structure 103 is not disposed can be collected in an auxiliary manner through the auxiliary transmission structure 103 in the adjacent auxiliary transmission regions 133, the carrier collecting capability of the solar cell is improved, and the photoelectric conversion efficiency of the solar cell is further improved.
In addition, the wiring regions 111 in the same auxiliary transmission region 133 where the auxiliary transmission structure is provided may be separated by only one wiring region 111, or may be separated by 2 or more wiring regions 111.
In summary, in the solar cell provided by an embodiment of the present application, carriers located between adjacent sub-grids 121 are collected by the auxiliary transmission structure 103, and the collected carriers are collected to the sub-grids 121 communicated with the auxiliary transmission structure 103, and the carriers are collected and transmitted to the sub-grids 121 by the auxiliary transmission structure 103 with stronger conductive capability, so that the collection loss of the carriers located between the adjacent sub-grids 121 is reduced, the collection efficiency of the carriers located between the adjacent sub-grids 121 and the photoelectric conversion efficiency of the solar cell are improved, the interval between the adjacent sub-grids 121 is increased, the number of the sub-grids 121 on the surface of the solar cell is reduced, and the manufacturing cost of the solar cell is reduced. Meanwhile, since the width of the auxiliary grid 121 does not need to be increased or reduced, the problem of grid breakage or poor contact caused by poor printing due to the change of the size of the auxiliary grid 121 is reduced, and the yield of the solar cell is improved.
The embodiment of the application also provides a photovoltaic module, referring to fig. 6, including: a cell string 601, wherein the cell string 601 is formed by connecting a plurality of solar cells; an encapsulation layer 602, wherein the encapsulation layer 602 is used for covering the surface of the battery string 601; a cover plate 603, the cover plate 603 is used for covering the surface of the encapsulation layer 602 away from the battery strings 601. The solar cells are electrically connected in whole or multiple pieces to form a plurality of cell strings 602, and the plurality of cell strings 602 are electrically connected in series and/or parallel.
In some embodiments, the plurality of battery strings 602 may be electrically connected by conductive straps 604. The encapsulant layer 602 covers the front and back sides of the solar cell, and specifically, the encapsulant layer 602 may be an organic encapsulant film such as an ethylene-vinyl acetate copolymer (EVA) film, a polyethylene octene co-elastomer (POE) film, or a polyethylene terephthalate (PET) film. In some embodiments, the cover 603 may be a cover 603 having a light transmitting function, such as a glass cover, a plastic cover, or the like. The surface of the cover plate 603 facing the encapsulation layer 602 may be a concave-convex surface, thereby increasing the utilization of incident light.
While the application has been described in terms of the preferred embodiment, it is not intended to limit the scope of the claims, and any person skilled in the art can make many variations and modifications without departing from the spirit and scope of the application, so that the scope of the application shall be defined by the claims.
Claims (16)
1. A solar cell, comprising:
a substrate;
the grid line is positioned on the surface of the substrate and comprises auxiliary grids which are arranged at intervals along a first direction and main grids which are arranged at intervals along a second direction;
an auxiliary transmission structure including a carrier transmission line and a carrier collection line, the carrier collection line being located in a wiring region of the substrate surface, the carrier transmission line electrically connecting the carrier collection line with at least one of the sub-gates adjacent thereto;
the wiring area is an area surrounded by two adjacent main grids and any two adjacent auxiliary grids between the two adjacent main grids.
2. The solar cell of claim 1, wherein the substrate comprises a semiconductor conductive layer and at least one passivation layer, the gate line being located on a surface of the passivation layer that is most spaced from the semiconductor conductive layer away from the semiconductor conductive layer;
the auxiliary transmission structure is positioned on the surface, far away from the semiconductor conductive layer, of the passivation layer, the carrier transmission line is attached to the passivation layer, and the carrier collection line penetrates through the passivation layer to be in ohmic contact with the semiconductor conductive layer.
3. The solar cell of claim 2, wherein the semiconductor conductive layer comprises a doped conductive layer, an emitter, or a carrier transport layer.
4. The solar cell according to claim 1, wherein a plurality of auxiliary transmission areas are arranged in sequence between two adjacent main grids along the second direction, and each auxiliary transmission area comprises a plurality of auxiliary transmission structures.
5. The solar cell according to claim 4, wherein each of the wiring regions in the auxiliary transmission region includes at least one of the auxiliary transmission structures therein, and the carrier collection line of each of the auxiliary transmission structures is electrically connected to the adjacent two of the sub-gates through the corresponding carrier transmission line.
6. The solar cell according to claim 5, wherein the number of auxiliary transmission regions is 1 to 50.
7. The solar cell according to claim 4, wherein the wiring regions where the auxiliary transmission structures are located in each of the auxiliary transmission regions are not adjacent to each other, and the wiring regions where the auxiliary transmission structures are located in adjacent two of the auxiliary transmission regions are alternately arranged.
8. The solar cell according to claim 1, wherein an extending direction of the carrier-collection line and an extending direction of the sub-gate are parallel to each other or perpendicular to each other.
9. The solar cell according to claim 1, wherein a spacing between the carrier collection line and adjacent two of the sub-grids in the first direction is a first spacing and a second spacing, respectively, and a ratio of the first spacing to the second spacing is 0.5 to 1.5.
10. The solar cell according to claim 1, wherein a spacing between the carrier collection line and the adjacent sub-grid in the first direction is 0.6mm to 1.25mm.
11. The solar cell according to claim 1, wherein a width of the carrier collection line is 20 μm to 100 μm in a direction perpendicular to an extending direction of the carrier collection line.
12. The solar cell according to claim 1, wherein a length of the carrier-collection line in an extending direction along the carrier-collection line is 0.2mm to 3mm.
13. The solar cell according to claim 1, wherein a spacing between adjacent carrier collection lines in the second direction is 50 μm to 2mm.
14. The solar cell according to claim 1, wherein a spacing between two adjacent sub-grids in the first direction is 1.4mm to 2.5mm.
15. The solar cell according to claim 1, wherein a width of the carrier transmission line is 20 μm to 40 μm in a direction perpendicular to an extending direction of the carrier transmission line.
16. A photovoltaic module, comprising:
a cell string formed by connecting a plurality of solar cells according to any one of claims 1 to 15;
an encapsulation layer for covering the surface of the battery string;
and the cover plate is used for covering the surface, far away from the battery strings, of the packaging layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310855413.7A CN116913988A (en) | 2023-07-12 | 2023-07-12 | Solar cell and photovoltaic module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310855413.7A CN116913988A (en) | 2023-07-12 | 2023-07-12 | Solar cell and photovoltaic module |
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| CN116913988A true CN116913988A (en) | 2023-10-20 |
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| CN202310855413.7A Pending CN116913988A (en) | 2023-07-12 | 2023-07-12 | Solar cell and photovoltaic module |
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