CN116904903A - Process for improving dissolution layer - Google Patents

Process for improving dissolution layer Download PDF

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Publication number
CN116904903A
CN116904903A CN202211383888.2A CN202211383888A CN116904903A CN 116904903 A CN116904903 A CN 116904903A CN 202211383888 A CN202211383888 A CN 202211383888A CN 116904903 A CN116904903 A CN 116904903A
Authority
CN
China
Prior art keywords
sand blasting
dissolution
protection plate
treatment
improving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211383888.2A
Other languages
Chinese (zh)
Inventor
唐建明
高志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aifa Technology Trading Shanghai Co ltd Chaohu Branch
Original Assignee
Aifa Technology Trading Shanghai Co ltd Chaohu Branch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aifa Technology Trading Shanghai Co ltd Chaohu Branch filed Critical Aifa Technology Trading Shanghai Co ltd Chaohu Branch
Priority to CN202211383888.2A priority Critical patent/CN116904903A/en
Publication of CN116904903A publication Critical patent/CN116904903A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/06—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for producing matt surfaces, e.g. on plastic materials, on glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/08—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for polishing surfaces, e.g. smoothing a surface by making use of liquid-borne abrasives
    • B24C1/083—Deburring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C11/00—Selection of abrasive materials or additives for abrasive blasts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123—Spraying molten metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/129—Flame spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/131—Wire arc spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

The invention provides a process for improving a dissolution layer, which comprises the following steps: s1, preprocessing a protection plate, performing sand blasting by using a sand blaster, and ensuring that the surface roughness is processed to be more than 3 mu m; s2, carrying out surface dissolution treatment on the protection plate treated by the S1; s3, carrying out sand blasting treatment on the protection plate treated by the S2 again to eliminate particles with easy falling-off of the wave peaks on the surface of the solution. According to the invention, the shot protection plate is subjected to sand blasting again, so that unstable factors on the wave crest of the shot layer on the surface of the protection plate can be effectively removed, the wave crest is flattened, and particles which are easy to fall off are easily avoided in actual use, so that the product yield of vacuum device film plating equipment can be effectively improved.

Description

Process for improving dissolution layer
Technical Field
The invention belongs to the technical field of surface treatment of panels and semiconductor parts, and particularly relates to a process for improving a dissolution layer.
Background
In the Array coating process of Thin Film Transistor (TFT) production and semiconductor production, vacuum coating equipment is needed, a protection plate is arranged in an inner working chamber of the vacuum coating equipment, the protection plate needs to be cleaned regularly to clean a coating layer on the surface of the protection plate, and the vacuum coating equipment can be normally operated through cleaning the protection plate of the vacuum coating equipment so as to complete effective maintenance.
At present, the cleaning of the protection plate of the vacuum coating equipment is usually carried out by adopting a mode of sand blasting and dissolving injection, however, after the dissolving injection is carried out on the surface of the protection plate, an unstable factor (particles with wave peaks on the dissolving surface are easy to fall off as shown in figure 2) exists on the dissolving injection layer of the surface, and a large number of particles are easy to generate when the vacuum coating equipment is installed and used, so that the product yield is influenced.
Accordingly, the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a process for improving a radiation layer, which is more practical.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a process for improving a dissolution layer, which is achieved by the following specific technical means:
a process for improving a solvolyzed layer comprising the steps of:
s1, preprocessing a protection plate, performing sand blasting by using a sand blaster, and ensuring that the surface roughness is processed to be more than 3 mu m;
s2, carrying out surface dissolution treatment on the protection plate treated by the S1;
s3, carrying out sand blasting treatment on the protection plate treated by the S2 again to eliminate particles with easy falling-off of the wave peaks on the surface of the solution.
Further, the blasting material used by the sand blaster in the step S1 is alumina, and the granularity is 30-60 meshes.
Further, the dissolution mode of the dissolution treatment in step S2 includes, but is not limited to, one or more of arc dissolution, flame dissolution and ultra-high sound dissolution, and the dissolution material of the dissolution treatment includes, but is not limited to, one or more of aluminum, copper, nickel and titanium.
Further, in the step S3, a common-pressure type sand blasting machine is adopted for sand blasting, the sand blasting distance is 10-30 cm, the sand blasting speed is 3-5 cm/S, and the sand blasting pressure is 2-4 kg/cm 2 。
Further, the blasting material used in the blasting treatment in the step S3 includes, but is not limited to, one or more of zirconia, glass beads and alloy pellets, and the particle size is 100-320 mesh.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the shot protection plate is subjected to sand blasting again, so that unstable factors on the wave crest of the shot layer on the surface of the protection plate can be effectively removed, the wave crest is flattened, and particles which are easy to fall off are easily avoided in actual use, so that the product yield of vacuum device film plating equipment can be effectively improved.
Drawings
FIG. 1 is a schematic illustration of the process flow of the present invention.
Fig. 2 is a schematic view of the surface of the protection plate after the "sand blasting + dissolving" treatment at this stage.
Fig. 3 is a schematic view of the surface of the shield after the treatment of the present invention.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings and examples. The following examples are illustrative of the invention but are not intended to limit the scope of the invention.
Examples:
as shown in fig. 1 and 3:
the invention provides a process for improving a dissolution layer, which comprises the following steps:
s1, preprocessing a protection plate, performing sand blasting by using a sand blaster, and ensuring that the surface roughness is processed to be more than 3 mu m;
s2, carrying out surface dissolution treatment on the protection plate treated by the S1;
s3, carrying out sand blasting treatment on the protection plate treated by the S2 again to eliminate particles with easy falling-off of the wave peaks on the surface of the solution.
Wherein, the spraying material used by the sand blasting machine in the step S1 is alumina, and the granularity is 30-60 meshes.
Wherein, the dissolution mode of the dissolution treatment in the step S2 comprises one or more of arc dissolution, flame dissolution and ultra-high sound dissolution, and the dissolution material of the dissolution treatment comprises one or more of aluminum, copper, nickel and titanium.
Wherein, in the step S3, a common-pressure sand blasting machine is adopted for sand blasting, the sand blasting distance is 10-30 cm, the sand blasting speed is 3-5 cm/S, and the sand blasting pressure is 2-4 kg/cm 2 。
Wherein, the spraying material adopted in the sand blasting treatment in the step S3 comprises one or more of zirconia, glass beads and alloy balls, and the granularity is 100-320 meshes.
According to the invention, the shot protection plate is subjected to sand blasting again, so that unstable factors on the wave crest of the shot layer on the surface of the protection plate can be effectively removed, the wave crest is flattened, and particles which are easy to fall off are easily avoided in actual use, so that the product yield of vacuum device film plating equipment can be effectively improved.
The embodiments of the invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.

Claims (5)

1. A process for improving a layer of radiation, comprising the steps of:
s1, preprocessing a protection plate, performing sand blasting by using a sand blaster, and ensuring that the surface roughness is processed to be more than 3 mu m;
s2, carrying out surface dissolution treatment on the protection plate treated by the S1;
s3, carrying out sand blasting treatment on the protection plate treated by the S2 again to eliminate particles with easy falling-off of the wave peaks on the surface of the solution.
2. The process for improving an emissive layer of claim 1, wherein: the spraying material used by the sand blasting machine in the step S1 is alumina, and the granularity is 30-60 meshes.
3. The process for improving an emissive layer of claim 1, wherein: the dissolution mode of the dissolution treatment in the step S2 includes, but is not limited to, one or more of arc dissolution, flame dissolution and ultra-high sound dissolution, and the dissolution material of the dissolution treatment includes, but is not limited to, one or more of aluminum, copper, nickel and titanium.
4. The process for improving an emissive layer of claim 1, wherein: the sand blasting treatment in the step S3 adopts a common pressure type sand blasting machine, the sand blasting distance is 10-30 cm, the sand blasting speed is 3-5 cm/S, and the sand blasting pressure is 2-4 kg/cm 2 。
5. The process for improving an emissive layer of claim 4, wherein: the spraying material adopted in the sand blasting treatment in the step S3 comprises one or more of zirconia, glass beads and alloy balls, and the granularity is 100-320 meshes.
CN202211383888.2A 2022-11-07 2022-11-07 Process for improving dissolution layer Pending CN116904903A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211383888.2A CN116904903A (en) 2022-11-07 2022-11-07 Process for improving dissolution layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211383888.2A CN116904903A (en) 2022-11-07 2022-11-07 Process for improving dissolution layer

Publications (1)

Publication Number Publication Date
CN116904903A true CN116904903A (en) 2023-10-20

Family

ID=88363440

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211383888.2A Pending CN116904903A (en) 2022-11-07 2022-11-07 Process for improving dissolution layer

Country Status (1)

Country Link
CN (1) CN116904903A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108554746A (en) * 2018-03-28 2018-09-21 上海申和热磁电子有限公司 A kind of molten preparation method for penetrating layer of semiconductor etching cavity graded ceramics
CN109112464A (en) * 2018-09-20 2019-01-01 安徽富乐德科技发展有限公司 A kind of molten preparation method for penetrating layer of semiconductor cleaning chamber ceramics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108554746A (en) * 2018-03-28 2018-09-21 上海申和热磁电子有限公司 A kind of molten preparation method for penetrating layer of semiconductor etching cavity graded ceramics
CN109112464A (en) * 2018-09-20 2019-01-01 安徽富乐德科技发展有限公司 A kind of molten preparation method for penetrating layer of semiconductor cleaning chamber ceramics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
徐培利等: "微喷砂后处理工艺对涂层刀具性能的影响规律", 现代制造工程, no. 7, pages 4 - 15 *

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Application publication date: 20231020

RJ01 Rejection of invention patent application after publication