CN116897433A - 成像装置 - Google Patents

成像装置 Download PDF

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Publication number
CN116897433A
CN116897433A CN202280018599.4A CN202280018599A CN116897433A CN 116897433 A CN116897433 A CN 116897433A CN 202280018599 A CN202280018599 A CN 202280018599A CN 116897433 A CN116897433 A CN 116897433A
Authority
CN
China
Prior art keywords
pixel separation
pixel
separation portion
imaging device
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280018599.4A
Other languages
English (en)
Chinese (zh)
Inventor
坂本美智子
田中洋志
大谷翔吾
小岛尚
饭岛匡
北村章太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116897433A publication Critical patent/CN116897433A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CN202280018599.4A 2021-04-15 2022-03-28 成像装置 Pending CN116897433A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-069276 2021-04-15
JP2021069276 2021-04-15
PCT/JP2022/014960 WO2022220084A1 (ja) 2021-04-15 2022-03-28 撮像装置

Publications (1)

Publication Number Publication Date
CN116897433A true CN116897433A (zh) 2023-10-17

Family

ID=83640674

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280018599.4A Pending CN116897433A (zh) 2021-04-15 2022-03-28 成像装置

Country Status (5)

Country Link
US (1) US20240204014A1 (https=)
JP (1) JPWO2022220084A1 (https=)
CN (1) CN116897433A (https=)
DE (1) DE112022002154T5 (https=)
WO (1) WO2022220084A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7487151B2 (ja) * 2021-06-29 2024-05-20 ゼタテクノロジーズ株式会社 固体撮像装置、固体撮像装置の製造方法、および電子機器
US20230395628A1 (en) * 2022-06-03 2023-12-07 Omnivision Technologies, Inc. Half quad photodiode (qpd) to improve qpd channel imbalance
WO2024154590A1 (ja) * 2023-01-18 2024-07-25 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026071148A1 (ja) * 2024-09-30 2026-04-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、撮像装置、および電子機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6168331B2 (ja) * 2012-05-23 2017-07-26 ソニー株式会社 撮像素子、および撮像装置
JP6505430B2 (ja) * 2014-12-12 2019-04-24 キヤノン電子株式会社 光学フィルタ及び撮像装置
WO2018078976A1 (ja) * 2016-10-28 2018-05-03 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
WO2019111373A1 (ja) * 2017-12-07 2019-06-13 オリンパス株式会社 固体撮像装置および固体撮像装置の製造方法
TWI858001B (zh) * 2019-02-25 2024-10-11 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
JP2021027276A (ja) * 2019-08-08 2021-02-22 キヤノン株式会社 光電変換装置および機器
JP2021040088A (ja) * 2019-09-05 2021-03-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2021069276A (ja) 2019-10-28 2021-04-30 モッツエンボッカー マービン 太陽電池式オフィス・工場照明
JP2020188267A (ja) * 2020-07-14 2020-11-19 キヤノン株式会社 撮像装置

Also Published As

Publication number Publication date
JPWO2022220084A1 (https=) 2022-10-20
US20240204014A1 (en) 2024-06-20
DE112022002154T5 (de) 2024-10-10
WO2022220084A1 (ja) 2022-10-20

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