JPWO2022220084A1 - - Google Patents

Info

Publication number
JPWO2022220084A1
JPWO2022220084A1 JP2023514565A JP2023514565A JPWO2022220084A1 JP WO2022220084 A1 JPWO2022220084 A1 JP WO2022220084A1 JP 2023514565 A JP2023514565 A JP 2023514565A JP 2023514565 A JP2023514565 A JP 2023514565A JP WO2022220084 A1 JPWO2022220084 A1 JP WO2022220084A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023514565A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022220084A1 publication Critical patent/JPWO2022220084A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
JP2023514565A 2021-04-15 2022-03-28 Pending JPWO2022220084A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021069276 2021-04-15
PCT/JP2022/014960 WO2022220084A1 (ja) 2021-04-15 2022-03-28 撮像装置

Publications (1)

Publication Number Publication Date
JPWO2022220084A1 true JPWO2022220084A1 (https=) 2022-10-20

Family

ID=83640674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514565A Pending JPWO2022220084A1 (https=) 2021-04-15 2022-03-28

Country Status (5)

Country Link
US (1) US20240204014A1 (https=)
JP (1) JPWO2022220084A1 (https=)
CN (1) CN116897433A (https=)
DE (1) DE112022002154T5 (https=)
WO (1) WO2022220084A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7487151B2 (ja) * 2021-06-29 2024-05-20 ゼタテクノロジーズ株式会社 固体撮像装置、固体撮像装置の製造方法、および電子機器
US20230395628A1 (en) * 2022-06-03 2023-12-07 Omnivision Technologies, Inc. Half quad photodiode (qpd) to improve qpd channel imbalance
WO2024154590A1 (ja) * 2023-01-18 2024-07-25 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026071148A1 (ja) * 2024-09-30 2026-04-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、撮像装置、および電子機器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243324A (ja) * 2012-05-23 2013-12-05 Sony Corp 撮像素子、および撮像装置
JP2016114699A (ja) * 2014-12-12 2016-06-23 キヤノン電子株式会社 光学フィルタ及び撮像装置
WO2018078976A1 (ja) * 2016-10-28 2018-05-03 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
WO2019111373A1 (ja) * 2017-12-07 2019-06-13 オリンパス株式会社 固体撮像装置および固体撮像装置の製造方法
WO2020175195A1 (ja) * 2019-02-25 2020-09-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2020188267A (ja) * 2020-07-14 2020-11-19 キヤノン株式会社 撮像装置
JP2021027276A (ja) * 2019-08-08 2021-02-22 キヤノン株式会社 光電変換装置および機器
JP2021040088A (ja) * 2019-09-05 2021-03-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021069276A (ja) 2019-10-28 2021-04-30 モッツエンボッカー マービン 太陽電池式オフィス・工場照明

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243324A (ja) * 2012-05-23 2013-12-05 Sony Corp 撮像素子、および撮像装置
JP2016114699A (ja) * 2014-12-12 2016-06-23 キヤノン電子株式会社 光学フィルタ及び撮像装置
WO2018078976A1 (ja) * 2016-10-28 2018-05-03 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
WO2019111373A1 (ja) * 2017-12-07 2019-06-13 オリンパス株式会社 固体撮像装置および固体撮像装置の製造方法
WO2020175195A1 (ja) * 2019-02-25 2020-09-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2021027276A (ja) * 2019-08-08 2021-02-22 キヤノン株式会社 光電変換装置および機器
JP2021040088A (ja) * 2019-09-05 2021-03-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2020188267A (ja) * 2020-07-14 2020-11-19 キヤノン株式会社 撮像装置

Also Published As

Publication number Publication date
US20240204014A1 (en) 2024-06-20
DE112022002154T5 (de) 2024-10-10
CN116897433A (zh) 2023-10-17
WO2022220084A1 (ja) 2022-10-20

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