CN116892057A - Epitaxial growth device and heating element thereof - Google Patents

Abstract

The disclosure provides an epitaxial growth device and a heating component thereof, wherein the heating component is used for heating a silicon wafer in the epitaxial growth device; the heating assembly comprises at least one group of heating lamp groups and at least one group of reflecting plates for reflecting heat radiation of the heating lamp groups; the reflective plate includes a first reflective region configured to reflect thermal radiation to a predetermined region along a radial direction of the silicon wafer, and a second reflective region configured to reflect thermal radiation to other regions of the silicon wafer than the predetermined region, the first reflective region having a reflectance greater than that of the second reflective region. The epitaxial growth device and the heating assembly thereof provided by the embodiment of the disclosure can improve the resistivity uniformity of the epitaxial wafer.

Description

Epitaxial growth device and heating element thereof

Technical Field

The invention relates to the technical field of semiconductor processing, in particular to an epitaxial growth device and a heating assembly thereof.

Background

Epitaxial wafers are typically obtained by growing an epitaxial film on a silicon wafer by chemical vapor deposition. In an epitaxial growth apparatus, a silicon wafer is exposed to a reaction gas, and a silicon single crystal thin film is deposited on the surface of the silicon wafer by a chemical vapor reaction. As the speed and Integration of Chips (ICs) increases further, more stringent requirements are placed on the quality and performance of silicon epitaxial wafers, including resistivity uniformity.

In the epitaxial processing process, the temperature distribution of the wafer can have an important influence on the uniformity of the resistivity, and the uniformity of the temperature distribution is mainly regulated by regulating the power parameters of the heating bulb at present. However, as resistivity uniformity requirements become higher, such a manner of adjusting the power balance parameters has failed to meet the resistivity uniformity requirements of the epitaxial wafer.

Disclosure of Invention

The embodiment of the disclosure provides an epitaxial growth device and a heating assembly thereof, which can improve the resistivity uniformity of epitaxial wafers.

The technical scheme provided by the embodiment of the disclosure is as follows:

a heating component of an epitaxial growth device is used for heating a silicon wafer in the epitaxial growth device; the heating assembly comprises at least one group of heating lamp groups and at least one group of reflecting plates for reflecting heat radiation of the heating lamp groups; the reflective plate includes a first reflective region configured to reflect thermal radiation to a predetermined region along a radial direction of the silicon wafer, and a second reflective region configured to reflect thermal radiation to other regions of the silicon wafer than the predetermined region, the first reflective region having a reflectance greater than that of the second reflective region.

Illustratively, the first reflective area is configured to reflect at least the thermal radiation of the set of heating lamps to converge at an annular region of the wafer at a distance R/2 from a center of the wafer, wherein the wafer includes a body region and an edge region at a periphery of the body region, R being a radius of the body region.

For example, the first reflection area and the second reflection area are respectively made of reflection materials with different reflectivities.

Illustratively, the first reflective area has a reflectivity of 90-99% and the second reflective area has a reflectivity of 74-96%.

Illustratively, the reflective material of the first reflective region is silver, and the reflective material of the second reflective region is gold; or, the reflective material of the first reflective area is gold, and the reflective material of the second reflective area is platinum.

Illustratively, each of the heating lamp sets includes:

a plurality of internal heating lamps for heating an inner region of the silicon wafer in a radial direction; and

A plurality of external heating lamps for heating an outer region of the silicon wafer in a radial direction;

the inner heating lamps and the outer heating lamps are arranged in a predetermined order in a ring shape arranged around the circumference of the susceptor.

Illustratively, the reflection plate includes: an inner reflection part corresponding to the inner heating lamp, and an outer reflection part corresponding to the outer heating lamp; wherein the method comprises the steps of

The internal reflection portion is at least two sub-regions including the first reflection region, and the external reflection portion has the same reflectivity as other sub-regions of the internal reflection portion except for the first reflection region, and is configured as the second reflection region.

Illustratively, one of the outer heating lamps is disposed within each of the heating lamp groups between every other and/or two adjacent arrays of the inner heating lamps.

Illustratively, the heating lamp is a halogen lamp.

An epitaxial growth device is used for growing an epitaxial layer on the surface of a silicon wafer; the epitaxial growth apparatus includes:

a reaction chamber;

the base is used for bearing the silicon wafer and is arranged in the reaction chamber; and

The heating assembly is arranged outside the reaction chamber.

The beneficial effects brought by the embodiment of the disclosure are as follows:

in the above scheme, by improving the reflecting plate in the heating component of the epitaxial growth device, the reflecting area of the reflecting plate is designed to be a first reflecting area and a second reflecting area with different reflectivities, the first reflecting area is larger than the reflectivity of the second reflecting area, the first reflecting area is configured to reflect the heat radiation to a preset area along the radial direction of the silicon wafer, the first reflecting area is configured to reflect the heat radiation to the preset area along the radial direction of the silicon wafer, in this way, the temperature of different areas in different silicon wafers is adjusted by changing the reflectivity of the different areas, more heat radiation is reflected to the preset area on the silicon wafer by the first reflecting area, so that the temperature of the preset area is increased, and the preset area can be the area comprising the silicon wafer with uneven surface temperature when radiant heat energy is shielded by the supporting arm in the related technology, so that the uniformity of the epitaxial wafer resistivity can be improved.

Drawings

FIG. 1 shows an epitaxial layer resistivity profile when using a prior art wafer epitaxial growth susceptor support stand;

FIG. 2 shows a schematic structure of a silicon wafer;

FIG. 3 shows the epitaxial layer radial resistivity results in the prior art;

FIG. 4 illustrates epitaxial layer radial resistivity results when heating a component using some embodiments of the present disclosure;

FIG. 5 illustrates epitaxial layer radial resistivity results when heating a component using other embodiments of the present disclosure;

FIG. 6 illustrates epitaxial layer radial resistivity results when heating a component using other embodiments of the present disclosure;

FIG. 7 illustrates epitaxial layer radial resistivity results when heating a component using other embodiments of the present disclosure;

fig. 8 is a schematic view showing the structure of an epitaxial growth apparatus according to an embodiment of the present disclosure;

fig. 9 is a schematic view showing a structure of a reflection plate in a heating assembly of an epitaxial growth apparatus according to an embodiment of the present disclosure.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.

Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.

Before explaining the epitaxial growth apparatus and the heating assembly thereof provided in the embodiments of the present disclosure in detail, the following description of the related art is necessary:

in the related art, the silicon wafer epitaxial growth apparatus may include a susceptor, a susceptor support frame, a heating assembly, and the like, wherein the susceptor support frame is supported below the susceptor, the silicon wafer is carried onto the susceptor, and the susceptor support frame may be rotated to improve the uniformity of epitaxial layer growth on the surface of the silicon wafer during epitaxial layer growth.

The inventor of the present disclosure found through research that, as the temperature of the epitaxial layer on the silicon wafer is affected by the temperature of the susceptor below the silicon wafer, and the susceptor support frame is located below the susceptor and is located on the heat radiation path of the lower heating assembly, part of the heat of the susceptor can be shielded, so that the temperature of the final susceptor in different areas is different, and the problem of uneven resistivity of the epitaxial layer is further caused.

In the epitaxial processing process, the temperature distribution of the wafer can have an important influence on the uniformity of the resistivity, and the uniformity of the temperature distribution is mainly adjusted by adjusting the power parameters of the heating bulb at present.

Taking an epitaxial layer formed after epitaxial growth of a silicon wafer by using a silicon wafer epitaxial growth device in the related art as an example, a resistivity distribution diagram of the epitaxial layer is illustrated in fig. 1, and the difference of color levels represents the difference of the resistivity of the epitaxial layer.

Among them, epitaxial layer resistivity detection can be performed using a device model QC3000e from Semilab. As can be seen from fig. 1, there is a color difference between different regions at a certain distance from the center of the silicon wafer, and the inventor researches that the reason for the color difference between the regions is that the support arm affects the distribution of the thermal field, thereby affecting the growth rate of the epitaxial layer, and finally resulting in the difference of the resistivity of the epitaxial layer.

There is an inverse relationship between resistivity and temperature, where the temperature is low at locations of high resistivity, and conversely where the temperature is high at locations of low resistivity.

In the related art, although the temperature uniformity can be improved by adjusting the power parameters of the heating lamps in the heating assembly of the epitaxial growth apparatus, as the resistivity uniformity requirement is higher and higher, the temperature difference in the silicon wafer cannot be further optimized by adjusting the power of the heating lamps.

In order to solve the above-described problems, as shown in fig. 2, an embodiment of the present disclosure provides a heating assembly 10 of an epitaxial growth apparatus for heating a silicon wafer 20 in the epitaxial growth apparatus.

The heating assembly 10 includes at least one set of heating lamps 11, and at least one set of reflecting plates 12 for reflecting heat radiation of the heating lamps 11; the reflection plate 12 includes a first reflection region S1 configured to reflect heat radiation to a predetermined region along a radial direction of the silicon wafer 20, and a second reflection region S2 configured to reflect heat radiation to other regions of the silicon wafer 20 than the predetermined region, the first reflection region S1 having a reflectance greater than that of the second reflection region S2.

In the above-mentioned scheme, by improving the reflecting plate 12 in the heating component 10 of the epitaxial growth device, the reflecting area of the reflecting plate 12 is designed to be a first reflecting area S1 and a second reflecting area S2 with different reflectivities, the first reflecting area S1 is larger than the reflectivity of the second reflecting area S2, the first reflecting area S1 is configured to reflect the thermal radiation to a preset area along the radial direction of the silicon wafer 20, thus, by changing the reflectivities of the different areas, the temperature of the different areas in the different silicon wafers 20 is adjusted, and more thermal radiation is reflected to the preset area on the silicon wafer 20 by the first reflecting area S1, so that the temperature at the preset area is increased, and the uniformity of the epitaxial resistivity is optimized, and the problem of uniformity of the epitaxial wafer resistivity can be improved.

It should be noted that the predetermined region may be a region including the silicon wafer 20 in the related art where the radiant heat energy is shielded by the support arm to cause the temperature of the surface of the silicon wafer 20 to be uneven.

It should be noted that the predetermined area may be adjusted according to silicon wafers 20 of different sizes, susceptor supports of different structures, and the like, and the predetermined area should be a position corresponding to an annular area with different color levels in the epitaxial layer resistivity distribution result.

As an exemplary embodiment, the first reflective area S1 is configured to reflect at least the thermal radiation of the set of heating lamps 11 to an annular area of the silicon wafer 20 at a distance R/2 from the center of the silicon wafer 20.

As shown in fig. 2, the silicon wafer 20 includes a body region a and an edge region B located at the periphery of the body region a, and R is the radius of the body region a.

By adopting the above scheme, taking fig. 3 as an example, fig. 3 shows a radial graph of the resistivity of the epitaxial layer in the related art under the condition that the power of the heating lamp is adjusted to be optimal, and the resistivity uniformity at this time has reached the optimal result achieved by adjusting the power parameter in the related art.

As can be seen in fig. 3, when the wafer 20 is placed on the susceptor in the epitaxial reaction chamber, the epitaxial layer of the wafer 20 may have a significant difference in thickness from other regions at one half the radius of the wafer 20.

Thus, in the above-described embodiment, the first reflection region S1 is configured to be capable of reflecting radiant heat energy via the first reflection region S1 to an annular region at a distance R/2 from the center of the silicon wafer 20, that is, the predetermined region includes an annular region at a distance R/2 from the center of the silicon wafer 20. Wherein the silicon wafer 20 comprises a main body area A and an edge area B positioned at the periphery of the main body area, and R is the radius of the main body area A.

In other embodiments, the position of the predetermined region may be adaptively adjusted according to the size of the silicon wafer 20, the internal structure of the epitaxial growth apparatus, and the like.

For example, the predetermined region may also include a region in which the <100> crystal orientation of the silicon wafer 20 is located.

Specifically, the uniformity of the thickness of the epitaxial layer directly affects the flatness of the epitaxial wafer during epitaxial growth. In general, the thickness of the epitaxial layer is greatly affected by temperature, and the epitaxial layer grows faster in the region with higher temperature, and vice versa. In addition, the crystal orientation of the substrate has a very obvious effect on the flatness of the epitaxial layer.

In particular, taking the silicon wafer 20 with the <100> crystal plane as an example, the epitaxial layer growth rate is higher in the region with the <110> crystal orientation group than in the region with the <100> crystal orientation group, mainly because the crystal growth rate is different between different crystal planes (the crystal plane growth rate with higher atomic density is smaller), and the thickness uniformity of the silicon wafer 20 is poor due to the thickness difference.

Therefore, radiant heat at the position of <100> crystal phase region can be reflected by the first reflection region S1 to raise the temperature at the position, ensuring uniform distribution of thermal field, and improving thickness uniformity and flatness of epitaxial wafer.

As an exemplary embodiment, the first reflective area S1 and the second reflective area S2 are made of reflective materials with different reflectivities.

By adopting the above scheme, the purpose of different reflectivities can be achieved by selecting different reflection materials for the first reflection area S1 and the second reflection area S2.

In the related art, the reflector plate 12 is typically made of gold.

In some exemplary embodiments of the present disclosure, the first reflective area S1 may have a reflectivity of 90 to 99% and the second reflective area S2 may have a reflectivity of 74 to 96%.

In some embodiments, the first reflective region S1 has a reflectivity of 90% and the second reflective region S2 has a reflectivity of 74%. With the above-described arrangement, by configuring the first reflection region S1 irradiated at the predetermined position to have a light reflectance of about 90% and the second reflection region to have a light reflectance of about 74%, it is possible to increase the temperature at the predetermined region in the silicon wafer 20 and reduce the resistivity of the predetermined region in the silicon wafer 20, thereby optimizing the uniformity of the resistivity.

Fig. 6 is a schematic diagram showing the resistivity distribution of the epitaxial layer when the light reflectivity of the first reflective region S1 is about 90% and the light reflectivity of the second reflective region S2 is about 74% in the above embodiment. As can be seen from fig. 3 and (6), with the above-described scheme, the present embodiment can reduce the resistivity of the predetermined region in the silicon wafer 20, compared with the related art, thereby optimizing the resistivity uniformity.

In some embodiments, the first reflective region S1 has a reflectivity of 99% and the second reflective region S2 has a reflectivity of 96%. With the above-described arrangement, by configuring the first reflection region S1 irradiated at the predetermined position to have a light reflectance of about 99% and the second reflection region to have a light reflectance of about 96%, it is possible to increase the temperature at the predetermined region in the silicon wafer 20 and reduce the resistivity of the predetermined region in the silicon wafer 20, thereby optimizing the uniformity of the resistivity.

As shown in fig. 7, the resistivity distribution of the epitaxial layer in the above embodiment is shown when the light reflectivity of the first reflective region S1 is about 99% and the light reflectivity of the second reflective region S2 is about 96%. As can be seen from fig. 3 and 7, with the above-described scheme, the present embodiment can reduce the resistivity of the predetermined region in the silicon wafer 20, compared with the related art, thereby optimizing the resistivity uniformity.

In some embodiments, the first reflective region S1 may have a reflectivity of 98±1% and the second reflective region S2 may have a reflectivity of 95±1%. For example, silver is used as the reflective material of the first reflective region S1, and gold is used as the reflective material of the second reflective region S2.

By adopting the above scheme, the material of the first reflecting area S1 irradiated at the preset position is silver, and the material of the second reflecting area S2 irradiated at other positions is gold, and the light reflectivity of gold is about 95% and the light reflectivity of silver is about 98%, so that the temperature of the preset area of the silicon wafer 20 can be increased, the resistivity of the preset area of the silicon wafer 20 can be reduced, and the uniformity of the resistivity can be optimized.

Fig. 4 is a schematic diagram showing the resistivity distribution of the epitaxial layer when the first reflective region S1 is silver and the second reflective region S2 is gold in the above embodiment.

As can be seen from fig. 3 and 4, the present embodiment can reduce the resistivity of the predetermined region in the silicon wafer 20 compared with the related art through the above-described scheme, thereby optimizing the resistivity uniformity.

In other exemplary embodiments, the first reflective area S1 has a reflectivity of 95% or more and the second reflective area S2 has a reflectivity of 75±1%. For example, gold is selected as the reflective material of the first reflective region S1, and platinum is selected as the reflective material of the second reflective region S2.

By adopting the above scheme, the material of the first reflecting area S1 irradiated at the preset position is gold, and the material of the second reflecting area S2 irradiated at the other positions is silver, and the light reflectivity of gold is about 95% and the light reflectivity of platinum is about 75%, so that the temperature of other areas except the preset area in the silicon wafer 20 can be reduced, the resistivity of the preset area in the silicon wafer 20 is improved, and the uniformity of the resistivity is optimized.

Fig. 5 is a schematic diagram showing the resistivity distribution of the epitaxial layer when gold is selected for the first reflective region S1 and platinum is selected for the second reflective region S2 in the above embodiment.

As can be seen from fig. 3 to 7, with the above-described scheme, the present embodiment can reduce the resistivity of the predetermined region in the silicon wafer 20, compared with the related art, thereby optimizing the resistivity uniformity.

As an exemplary embodiment, as shown in fig. 8, each of the heating lamp groups 11 includes:

a plurality of internal heating lamps 111 for heating an inner region of the silicon wafer 20 in a radial direction; and

A plurality of external heating lamps 112 for heating an outer region of the silicon wafer 20 in a radial direction;

the inner heating lamps 111 and the outer heating lamps 112 are arranged in a predetermined order in a ring shape arranged around the circumference of the susceptor.

Taking fig. 8 as an example, the heating assembly 10 may include an upper heating lamp set 101 and a lower heating lamp set 102, where the upper heating lamp set 101 is used to heat the upper surface of the silicon wafer 20 and may be disposed above the reaction chamber 30 of the epitaxial growth apparatus; the lower heating lamp set 102 is used to heat the lower surface of the silicon wafer 20, and may be disposed below the reaction chamber 30.

In some exemplary embodiments, one of the external heating lamps 112 is disposed in each of the heating lamp groups 11 between every other and/or two adjacent inner heating lamps 111.

For example, in the upper heating lamp group 101, 20 inner heating lamps 111 and 12 outer heating lamps 112 are included, which are arranged in a ring in a predetermined order.

The 12 inner heating lamps 111 and the 32 outer heating lamps 112 may be included in the lower heating lamp group 102, and arranged in a ring in a predetermined order.

Illustratively, the heating lamp is a halogen lamp.

In some exemplary embodiments, as shown in fig. 8 and 9, the reflection plate 12 includes: an inner reflecting portion 121 corresponding to the inner heating lamp 111, and an outer reflecting portion 122 corresponding to the outer heating lamp 112.

Wherein the internal reflection part 121 is divided into at least two sub-regions including the first reflection region S1, and the external reflection part 122 has the same reflectivity as other sub-regions of the internal reflection part 121 except for the first reflection region S1, and is configured as the second reflection region S2.

Fig. 9 shows an embodiment in which 20 inner reflecting portions 121 and 12 outer reflecting portions 122 are included in the corresponding upper reflecting plate 12 of the upper heating lamp group 101, and are arranged in a ring in a predetermined order.

12 inner reflecting portions 121 and 32 outer reflecting portions 122 may be included in the corresponding lower reflecting plate 12 of the lower heating lamp set 102, and arranged in a ring in a predetermined order.

It should be noted that, it is ensured that the radiant heat energy refracted by the first reflection area S1 can exactly compensate the heat energy difference between the predetermined area and the other area of the silicon wafer 20.

Specifically, when the temperature of the epitaxial growth device is calibrated, the power and the like of the heating assembly 10 can be calibrated and adjusted to ensure that the radiation heat energy reflected by the first reflection area S1 can just compensate the heat energy difference between the predetermined area of the silicon wafer 20 and other areas when the set temperature is reached.

In addition, as shown in fig. 8, the embodiment of the present disclosure further provides an epitaxial growth apparatus for growing an epitaxial layer on the surface of the silicon wafer 20; the epitaxial growth apparatus includes:

a reaction chamber 30;

a susceptor 40 for carrying a silicon wafer 20, the susceptor 40 being disposed within the reaction chamber 30; and

The heating assembly 10 provided by the embodiment of the present disclosure, the heating assembly 10 is disposed outside the reaction chamber 30.

In addition, the epitaxial growth apparatus provided by the embodiment of the present disclosure may further include:

a base support 50, the base support 50 being located below the base 40.

Illustratively, the reaction chamber 30 may include an upper bell jar 31 and a lower bell jar 32, the upper bell jar 31 and the lower bell jar 32 together enclosing the reaction chamber 30, the susceptor 40 separating the reaction chamber 30 into an upper reaction chamber and a lower reaction chamber, the silicon wafer 20 being disposed in the upper reaction chamber, the heating assembly 10 providing a high temperature environment for vapor phase epitaxial deposition to the reaction chamber 30 through the upper bell jar 31 and the lower bell jar 32, the susceptor support frame 50 being positioned in a radiation path of the heating assembly 10 for heat radiation to the susceptor 40.

Illustratively, the apparatus for epitaxial growth of silicon wafer 20 further comprises:

an inlet 33, wherein the inlet 33 is arranged on the side wall of the reaction chamber 30, and is used for sequentially delivering cleaning gas and silicon source gas into the reaction chamber 30;

and an exhaust port 34, wherein the exhaust port 34 is disposed on a sidewall of the reaction chamber 30, and is used for exhausting the reaction tail gas of each of the cleaning gas and the silicon source gas from the reaction chamber 30.

The following points need to be described:

(1) The drawings of the embodiments of the present disclosure relate only to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

(2) In the drawings for describing embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced for clarity, i.e., the drawings are not drawn to actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.

(3) The embodiments of the present disclosure and features in the embodiments may be combined with each other to arrive at a new embodiment without conflict.

The above is merely a specific embodiment of the disclosure, but the protection scope of the disclosure should not be limited thereto, and the protection scope of the disclosure should be subject to the claims.

Claims (10)

1. A heating component of an epitaxial growth device is used for heating a silicon wafer in the epitaxial growth device; wherein the heating assembly comprises at least one group of heating lamps and at least one group of reflecting plates for reflecting the heat radiation of the heating lamps; the reflective plate includes a first reflective region configured to reflect thermal radiation to a predetermined region along a radial direction of the silicon wafer, and a second reflective region configured to reflect thermal radiation to other regions of the silicon wafer than the predetermined region, the first reflective region having a reflectance greater than that of the second reflective region.

2. The heating assembly of an epitaxial growth apparatus of claim 1 wherein the first reflective region is configured to reflect heat radiation from the set of heating lamps at least to converge at an annular region of the wafer at a distance R/2 from a center of the wafer, wherein the wafer comprises a body region and an edge region at a periphery of the body region, R being a radius of the body region.

3. The heating assembly of an epitaxial growth apparatus of claim 1, wherein the first reflective region and the second reflective region are each formed of a reflective material having a different reflectivity.

4. A heating assembly of an epitaxial growth apparatus according to claim 3, wherein the first reflective region has a reflectance of 90 to 99% and the second reflective region has a reflectance of 74 to 96%.

5. The heating assembly of the epitaxial growth apparatus of claim 4, wherein the reflective material of the first reflective region is silver and the reflective material of the second reflective region is gold; or alternatively

The first reflecting area is made of gold, and the second reflecting area is made of platinum.

6. The heating assembly of an epitaxial growth apparatus of claim 1, wherein each set of heating lamps comprises:

a plurality of internal heating lamps for heating an inner region of the silicon wafer in a radial direction; and

A plurality of external heating lamps for heating an outer region of the silicon wafer in a radial direction;

the inner heating lamps and the outer heating lamps are arranged in a predetermined order in a ring shape arranged around the circumference of the susceptor.

7. The heating assembly of an epitaxial growth apparatus of claim 6, wherein the reflective plate comprises: an inner reflection part corresponding to the inner heating lamp, and an outer reflection part corresponding to the outer heating lamp; wherein the method comprises the steps of

The internal reflection portion is at least two sub-regions including the first reflection region, and the external reflection portion has the same reflectivity as other sub-regions of the internal reflection portion except for the first reflection region, and is configured as the second reflection region.

8. The heating assembly of an epitaxial growth apparatus of claim 7 wherein within each of said groups of heating lamps, every other and/or between two adjacent arrays of said inner heating lamps, one of said outer heating lamps is disposed.

9. The heating assembly of an epitaxial growth apparatus of claim 7 wherein the heating lamp is a halogen lamp.

10. An epitaxial growth device is used for growing an epitaxial layer on the surface of a silicon wafer; the epitaxial growth device is characterized by comprising:

a reaction chamber;

the base is used for bearing the silicon wafer and is arranged in the reaction chamber; and

A heating assembly as claimed in any one of claims 1 to 9, which is disposed outside the reaction chamber.