CN116887643A - Display panel and preparation method thereof - Google Patents
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- CN116887643A CN116887643A CN202311140516.1A CN202311140516A CN116887643A CN 116887643 A CN116887643 A CN 116887643A CN 202311140516 A CN202311140516 A CN 202311140516A CN 116887643 A CN116887643 A CN 116887643A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application provides a display panel and a preparation method thereof, wherein the display panel comprises a substrate, a plurality of sub-pixels, a pixel limiting layer, a cathode auxiliary layer and an overhang structure; the plurality of sub-pixels are arranged on the substrate; each sub-pixel comprises an anode electrode, a light-emitting layer and a cathode electrode which are sequentially stacked on a substrate; the pixel limiting layer is arranged on the substrate and limits the positions of the plurality of sub-pixels; the cathode auxiliary layer is arranged on the substrate and is positioned between two adjacent sub-pixels; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer; the overhang structure is arranged on one side of the cathode auxiliary layer away from the substrate and is positioned between two adjacent sub-pixels. According to the application, the overhang structure is arranged on one side of the cathode auxiliary layer far away from the substrate, so that the adjacent overhang structure can further limit the sub-pixels, and the overhang structure can replace a metal mask plate in the prior art, so that the cost can be saved, and the resolution of the display panel can be further improved.
Description
Technical Field
The application relates to the technical field of displays, in particular to a display panel and a preparation method thereof.
Background
OLEDs (Organic Light Emitting Display, organic light emitting displays) are currently the mainstream display technology, and OLED display panels include active OLED display panels (AMOLEDs) and passive OLED display Panels (PMOLEDs). At present, an organic luminescent material of an AMOLED is deposited by adopting an FMM (Fine Metal Mask) organic luminescent material of red, green and blue, but the manufacturing mode has the defects of high FMM price and limited resolution, for example, the limit is reached after 500 PPI.
Disclosure of Invention
The invention mainly solves the technical problems of low resolution and high cost of a display panel in the prior art by providing the display panel and the preparation method thereof.
In order to solve the technical problems, the first technical scheme adopted by the invention is as follows: provided is a display panel including:
a substrate;
a plurality of sub-pixels disposed on the substrate; each sub-pixel comprises an anode electrode, a light-emitting layer and a cathode electrode which are sequentially stacked on a substrate;
a pixel defining layer disposed on the substrate for defining positions of the plurality of sub-pixels;
the cathode auxiliary layer is arranged on the substrate and is positioned between two adjacent sub-pixels; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer;
The overhang structure is arranged on one side of the cathode auxiliary layer away from the substrate and is positioned between two adjacent sub-pixels.
The overhang structure is a single-layer negative photoresist layer and is arranged on the surface of the cathode auxiliary layer far away from the substrate.
The anode electrode is arranged between the pixel limiting layer and the substrate, the cathode auxiliary layer is arranged on one side, far away from the substrate, of the pixel limiting layer, and the overhang structure is arranged on the surface, far away from the substrate, of the cathode auxiliary layer.
Wherein the anode electrode and the cathode auxiliary layer are arranged between the pixel limiting layer and the substrate in the same layer, and the pixel limiting layer is provided with a first opening exposing the cathode auxiliary layer; the cathode electrodes of two adjacent sub-pixels are in contact with the cathode auxiliary layer through the first opening.
One part of the overhang structure is arranged in the first opening and is positioned on the surface of the cathode auxiliary layer far away from the substrate, and the other part of the overhang structure protrudes out of the first opening; a gap is arranged between the overhang structure and the side face of the first opening, and the cathode electrodes of two adjacent sub-pixels are contacted with the cathode auxiliary layer through the gap.
Wherein a projection of the overhang structure onto the pixel defining layer covers the first opening.
Wherein, along the direction from the bottom to the top of the first opening, the width of the first opening and the width of the overhang structure are gradually increased.
Wherein the width of the gap gradually decreases along the direction from the bottom to the top of the first opening along the side of the first opening.
In order to solve the technical problems, a second technical scheme adopted by the invention is as follows: provided is a method of manufacturing a display panel, the method of manufacturing a display panel including:
forming an anode electrode, a pixel defining layer, and a cathode auxiliary layer on a substrate;
coating a negative photoresist layer on one side of the cathode auxiliary layer far away from the substrate;
forming a third opening on the negative photoresist layer by means of exposure and development; the third opening exposes the anode electrode, and the side wall of the third opening forms an overhang structure;
depositing a light-emitting layer and a cathode electrode on one side of the anode electrode away from the substrate; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer.
Wherein forming an anode electrode, a pixel defining layer, and a cathode auxiliary layer on a substrate includes:
providing a metal layer on a substrate;
etching the metal layer to obtain a cathode auxiliary layer and an anode electrode which are mutually spaced;
forming a pixel defining layer on a side of the cathode auxiliary layer and the anode electrode away from the substrate;
first and second openings spaced apart from each other are formed on the pixel defining layer such that the cathode auxiliary layer is exposed through the first opening and the anode electrode is exposed through the second opening.
The beneficial effects of the application are as follows: different from the prior art, a display panel and a preparation method thereof are provided, wherein the display panel comprises a substrate, a plurality of sub-pixels, a pixel limiting layer, a cathode auxiliary layer and an overhang structure; the plurality of sub-pixels are arranged on the substrate; each sub-pixel comprises an anode electrode, a light-emitting layer and a cathode electrode which are sequentially stacked on a substrate; the pixel limiting layer is arranged on the substrate and limits the positions of the plurality of sub-pixels; the cathode auxiliary layer is arranged on the substrate and is positioned between two adjacent sub-pixels; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer; the overhang structure is arranged on one side of the cathode auxiliary layer away from the substrate and is positioned between two adjacent sub-pixels. According to the application, the overhang structure is arranged on one side of the cathode auxiliary layer far away from the substrate, so that the adjacent overhang structure can further limit the sub-pixels, and the overhang structure can replace a metal mask plate in the prior art, so that the cost can be saved, and the resolution of the display panel can be further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another embodiment of a display panel according to the present invention;
FIG. 3 is a schematic structural diagram of a display panel according to another embodiment of the present invention;
FIG. 4 is a schematic flow chart of a method for manufacturing a display panel according to the present invention;
FIG. 5 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 6 (a) -6 (v) are schematic structural diagrams corresponding to each step in the method for manufacturing a display panel provided in fig. 5;
FIG. 7 is a schematic flow chart of another embodiment of a method for manufacturing a display panel according to the present invention;
fig. 8 (a) -8 (f) are schematic structural diagrams corresponding to each step in the method for manufacturing a display panel provided in fig. 7;
FIG. 9 is a schematic flow chart of another embodiment of a method for manufacturing a display panel according to the present invention;
fig. 10 (a) -10 (g) are schematic structural diagrams corresponding to each step in the method for manufacturing the display panel provided in fig. 9.
In the figure: a display panel 100; a substrate 1 and a substrate 11; a driving circuit layer 12; a sub-pixel 2; an anode electrode 21; a light emitting layer 22; a cathode electrode 23; a pixel defining layer 3; a first opening 31; a second opening 32; a first via hole 33; a second via 34; a filling section 35; a boss 36; a pole auxiliary layer 4; a suspension structure 5; an upper surface 51; a lower surface 52; a side wall 53; a gap 54; a seal layer 6; a filler layer 7; a cover plate 8; a metal layer 91; a first metal layer 92; a second metal layer 93; a negative photoresist layer 94; a buffer layer 95; a first subpixel 201; a first cathode electrode 2011; a red light emitting layer 2012; a first encapsulation layer 2013; a first protective layer 2014; a second subpixel 202; a second cathode electrode 2021; a green light-emitting layer 2022; a second encapsulation layer 2023; a second protective layer 2024; a third sub-pixel 203; a third cathode electrode 2031; a blue light emitting layer 2032; a third encapsulation layer 2033; and a third protective layer 2034.
Detailed Description
The following describes embodiments of the present invention in detail with reference to the drawings.
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, interfaces, techniques, etc., in order to provide a thorough understanding of the present invention.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terms "first," "second," "third," and the like in this disclosure are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", and "a third" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. All directional indications (such as up, down, left, right, front, back … …) in embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular gesture (as shown in the drawings), and if the particular gesture changes, the directional indication changes accordingly. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
In order to improve the resolution and reduce the cost of the OLED display panel, patterning of the organic light emitting material layer has been started. A partition structure is added between the sub-pixels, the partition structure comprising an upper part made of an inorganic insulating material and a lower part made of an inorganic conductive material (typically a conductive metal). The cathode electrode of each sub-pixel is connected through the lower part made of the inorganic conductive material in the partition structure, so that the connection of the cathode electrode of each sub-pixel is realized. However, the inorganic insulating material layer and the inorganic conductive material layer are etched by dry etching and wet etching, so that the process is more and the process is not well controlled.
Referring to fig. 1 to 3, fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the invention; FIG. 2 is a schematic diagram of another embodiment of a display panel according to the present invention; fig. 3 is a schematic structural diagram of a display panel according to another embodiment of the present invention.
In order to improve the above-mentioned problems, save the cost and improve the resolution of the display panel 100, the present embodiment provides a display panel 100, wherein the display panel 100 includes a substrate 1, a plurality of sub-pixels 2, a pixel defining layer 3, a cathode auxiliary layer 4, an overhang structure 5 and an encapsulation layer 6. A plurality of sub-pixels 2 are disposed on the substrate 1; each sub-pixel 2 includes an anode electrode 21, a light emitting layer 22, and a cathode electrode 23, which are sequentially stacked on the substrate 1; the pixel defining layer 3 is disposed on the substrate 1 and defines positions of the plurality of sub-pixels 2; the cathode auxiliary layer 4 is arranged on the substrate 1 and is positioned between two adjacent sub-pixels 2; the cathode electrodes 23 of two adjacent sub-pixels 2 are electrically connected through the cathode auxiliary layer 4; the overhang structure 5 is disposed on a side of the cathode auxiliary layer 4 away from the substrate 1 and between two adjacent sub-pixels 2.
In an embodiment, the base plate 1 includes a substrate 11 and a driving circuit layer 12. The display panel 100 having the substrate 11 and the driving circuit layer 12 is an active OLED.
In another embodiment, the substrate 1 comprises a substrate 11. The display panel 100 having the substrate 11 but not including the driving circuit layer 12 is a passive OLED. The passive OLED includes a plurality of anode electrodes 21 spaced in parallel and a plurality of cathode electrodes 23 spaced in parallel, the anode electrodes 21 and the cathode electrodes 23 being disposed to intersect to form an address circuit, and scan driving is performed through an external PCB circuit board.
Wherein the substrate 11 may be a glass substrate; a flexible substrate may be used, wherein the material of the flexible substrate is Polyimide (PI). The driving circuit layer 12 may be a TFT circuit layer for driving the light emitting layer 22 of the OLED. The specific TFT circuit layer includes a plurality of driving circuit units arranged in an array, and each driving circuit unit may include a Thin Film Transistor (TFT) device and a capacitor. Each driving circuit unit corresponds to one anode electrode 21 and one light emitting layer 22. The TFT device is of a low temperature polysilicon (Low Temperature Poly-silicon, LTPS) type, or a Metal oxide semiconductor (Metal-Oxide Semiconductor, MOS) type, for example, a Metal oxide semiconductor type of Indium Gallium Zinc Oxide (IGZO).
The display panel 100 in this embodiment will be described in detail by taking an active OLED as an example.
The sub-pixel 2 in the active OLED includes an anode electrode 21, a light emitting layer 22, and a cathode electrode 23, which are sequentially stacked.
The anode electrode 21 is disposed between the pixel defining layer 3 and the substrate 1. Specifically, the anode electrode 21 is provided on a side surface of the TFT circuit layer remote from the substrate 1. The anode electrodes 21 are provided in plural and at intervals on one side surface of the TFT circuit layer. For example, a plurality of anode electrodes 21 are arranged in an array, and each anode electrode 21 is in one-to-one correspondence and electrically connected to a driving circuit unit in the TFT circuit layer. The material of anode electrode 21 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.
The light emitting layer 22 is for emitting red, blue or green light when energized. The light Emitting Layer 22 may include one or more of HIL (Hole Injection Layer ), HTL (Hole Transfer Layer, hole transport Layer), EML (emission Layer), and ETL (Electron Transfer Layer ).
The cathode electrode 23 is arranged on one side of the light-emitting layer 22 away from the anode electrode 21, and the end part of the cathode electrode 23 is contacted with the cathode auxiliary layer 4 so that the cathode electrodes 23 of two adjacent sub-pixels 2 are conducted through the cathode auxiliary layer 4; for example, the cathode electrodes 23 of the same row or column are all conducted through the cathode auxiliary layer 4, or all the cathode electrodes 23 are all conducted through the cathode auxiliary layer 4. The material of the cathode electrode 23 includes, but is not limited to, chromium, titanium, magnesium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials. The material of the cathode electrode 23 may be the same as or different from the material of the anode electrode 21, and is specifically set according to the actual situation.
The cathode auxiliary layer 4 may be disposed between the pixel defining layer 3 and the substrate 1, or may be disposed on a side of the pixel defining layer 3 away from the substrate 1. The material of the cathode auxiliary layer 4 includes, but is not limited to, chromium, titanium, magnesium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.
The overhang structure 5 is arranged on the side of the cathode auxiliary layer 4 remote from the substrate 1. In particular, the overhang structure 5 may be in contact with the cathode auxiliary layer 4. In another embodiment, when the cathode auxiliary layer 4 is disposed between the pixel defining layer 3 and the substrate 1 and the cathode auxiliary layer 4 is covered by the pixel defining layer 3, the overhang structure 5 may also be in contact with a surface of the pixel defining layer 3 remote from the cathode auxiliary layer 4, the pixel defining layer 3 having an opening spaced from the overhang structure 5 such that the cathode auxiliary layer 4 is exposed.
The overhang structure 5 includes an upper surface 51 and a lower surface 52 parallel to each other, and a sidewall 53 connecting the upper surface 51 and the lower surface 52. The center point of the upper surface 51 is coaxially disposed with the center point of the lower surface 52, and the area of the upper surface 51 is larger than the area of the lower surface 52. In this embodiment, the sidewall 53 is a slope. The included angle between the inclined plane and the surface of the cathode auxiliary layer 4 contacting the overhang structure 5 cannot be too large, and if the included angle is too large, the blocking effect between the adjacent sub-pixels 2 is poor; the angle between the inclined plane and the surface of the cathode auxiliary layer 4 contacting the overhang structure 5 cannot be too small, and if the angle is too small, the processing of the overhang structure 5 is difficult to achieve.
In this embodiment, the included angle between the inclined plane and the surface of the cathode auxiliary layer 4 is in the range of 30 ° to 70 °. In one embodiment, the angle between the bevel and the surface of the cathode auxiliary layer 4 contacting the overhang structure 5 is in the range 45 ° to 60 °. For example, the angle between the inclined surface and the surface of the cathode auxiliary layer 4 contacting the overhang structure 5 may be 35 °, 40 °, 45 °, 50 °, 55 °, 60 °, 65 °, 70 °, or the like, and specifically set according to the actual situation.
In other embodiments, the sidewall 53 may also be curved. For example, the cambered surface may be a convex cambered surface or a concave cambered surface.
The pixel defining layer 3 has a second opening 32 exposing the anode electrode 21 so that the anode electrode 21 adjacent to the pixel defining layer 3 at intervals is exposed. In this embodiment, the pixel defining layer 3 has a T-shaped structure. Specifically, the pixel defining layer 3 includes a filling portion 35 and a protruding portion 36 integrally formed, the filling portion 35 is disposed between the anode electrodes 21, the protruding portion 36 is disposed on a side of the filling portion 35 away from the substrate 1, and the protruding portion 36 extends to a surface of the anode electrode 21 to cover a part of the exposed surface of the anode electrode 21. The longitudinal section of the protruding portion 36 may have a rectangular structure or a trapezoid structure. In the present embodiment, the longitudinal section of the protruding portion 36 is a trapezoidal structure, and the width of the protruding portion 36 gradually decreases in the direction from the bottom to the top of the second opening 32.
The material of the pixel defining layer 3 may be one of an organic material, an organic material having an inorganic coating layer provided thereon, or an inorganic material. The organic material of the pixel defining layer 3 includes, but is not limited to, polyimide. The inorganic material of the pixel defining layer 3 includes, but is not limited to, silicon oxide (SiO 2 ) Silicon nitride (Si) 3 N 4 ) Silicon oxynitride (Si) 2 N 2 O), magnesium fluoride (MgF) 2 ) Or a combination thereof.
In one embodiment, referring to fig. 1, for saving materials and simplifying the process, the anode electrode 21 and the cathode auxiliary layer 4 are disposed between the pixel defining layer 3 and the substrate 1. The pixel defining layer 3 has a second opening 32 exposing the anode electrode 21 and a first opening 31 exposing the cathode auxiliary layer 4, and the cathode electrodes 23 of adjacent two sub-pixels 2 are in contact with the cathode auxiliary layer 4 through the first opening 31. In this embodiment, the cathode auxiliary layer 4 can be formed together during the patterning process of the anode electrode 21, simplifying the process flow; and the anode electrode 21 is made of metal with high conductivity, such as combination of ITO and silver, so that the conductivity of the cathode auxiliary layer 4 is high, thereby reducing the resistance of the whole device and improving the display efficiency of the OLED device.
The overhang structure 5 is arranged on the surface of the cathode auxiliary layer 4 remote from the substrate 1. One part of the overhang structure 5 is arranged in the first opening 31 and positioned on the surface of the cathode auxiliary layer 4 away from the substrate 1, and the other part of the overhang structure protrudes out of the first opening 31; the overhang structure 5 has a gap 54 between the side of the first opening 31, and the cathode electrode 23 of two adjacent sub-pixels 2 is in contact with the cathode auxiliary layer 4 through the gap 54.
In the present embodiment, the projection of the overhang structure 5 onto the pixel defining layer 3 covers the first opening 31. In this way, when the organic luminescent material is evaporated, the deposited organic material is blocked by the upper surface 51 of the overhang structure 5 and is not deposited on the cathode auxiliary layer 4 of the first opening 31, so as to avoid blocking the electric connection coupling between the cathode electrode 23 and the cathode auxiliary layer 4, and when the cathode electrode 23 is evaporated, the inclined evaporation angle is adopted, the deposited organic material can be deposited on the cathode auxiliary layer 4 of the first opening 31, so that the electric connection conduction between the cathode electrode 23 and the cathode auxiliary layer 4 is realized. The area of the lower surface 52 of the overhang structure 5 is smaller than the area of the surface of the cathode auxiliary layer 4 contacting the overhang structure 5.
The width of the first opening 31, the width of the second opening 32, and the width of the overhang structure 5 all gradually increase in the direction from the bottom to the top of the first opening 31.
In order to prevent the organic light emitting material from being deposited to the cathode auxiliary layer 4 as much as possible, the width of the gap 54 is gradually reduced in a direction from the bottom to the top of the first opening 31 along the side of the first opening 31. In another embodiment, the width of the gap 54 is constant along the side of the first opening 31 in the direction from the bottom to the top of the first opening 31. In another embodiment, to facilitate vapor deposition to form the cathode electrode 23, the width of the gap 54 is gradually increased along the side surface of the first opening 31 in the direction from the bottom to the top of the first opening 31.
In another embodiment, the anode electrode 21 and the cathode auxiliary layer 4 are co-layer disposed between the pixel defining layer 3 and the substrate 1. Referring to fig. 2, the pixel defining layer 3 covers the cathode auxiliary layer 4, and the pixel defining layer 3 has a second opening 32 exposing the anode electrode 21, and the pixel defining layer 3 is provided with a first via hole 33 and a second via hole 34 spaced apart from each other. The first via hole 33 and the second via hole 34 expose a part of the surface of the same cathode auxiliary layer 4. The cathode electrodes 23 of the adjacent two sub-pixels 2 are in contact with the cathode auxiliary layer 4 through the first via holes 33 and the second via holes 34.
The overhang structure 5 is provided at a surface of the pixel defining layer 3 remote from the substrate 1. The overhang structure 5 is disposed between the first via hole 33 and the second via hole 34, and an orthographic projection of the overhang structure 5 on the substrate 1 covers an orthographic projection of the first via hole 33 and the second via hole 34 on the substrate 1. The first via hole 33 and the second via hole 34 may have the same shape and size, or may have different shapes and sizes. The cross-sectional shapes of the first and second via holes 33 and 34 may be rectangular, circular semi-annular, etc. In this embodiment, the first via hole 33 and the second via hole 34 are both circular in shape. In an embodiment, the sizes of the first via hole 33 and the second via hole 34 gradually increase from the bottom to the top of the second opening 32. In another embodiment, the dimensions of the first via hole 33 and the second via hole 34 are constant from the bottom to the top of the second opening 32. In another embodiment, the first via hole 33 and the second via hole 34 gradually decrease in size from the bottom to the top of the second opening 32.
In this embodiment, the auxiliary layer of the anode electrode 21 and the anode electrode 21 are made of the same material and manufactured in the same process.
In the above embodiment, the overhang structure 5 may be a single-layer structure. Specifically, the material of the overhang structure 5 may be one of a non-conductive organic material and a non-conductive inorganic material. Wherein the non-conductive inorganic material includes, but is not limited to, an inorganic silicon-containing material. For example, the silicon-containing material comprises an oxide or nitride of silicon or a combination thereof. Wherein the non-conductive organic material comprises a negative photosensitive organic material. For example, negative photosensitive organic materials include, but are not limited to, negative photoresist.
In the exposure process, the irradiated part of the negative photoresist is converged, crosslinked and cured, and the non-irradiated part is not crosslinked and polymerized. The surface of the negative photoresist is easier to polymerize and crosslink, the illumination intensity of the part of the negative photoresist far away from the surface is gradually weakened, and the degree of polymerization and crosslinking of the negative photoresist is gradually weakened from the surface to the direction far away from the surface. In the development process, the negative photoresist which is not crosslinked and polymerized is washed out, and the overhang structure 5 with the inverted trapezoid structure is obtained.
The suspension structure 5 with a single-layer structure is manufactured based on the negative photoresist by adopting an exposure and development mode, and only one exposure and development are needed, so that the process is simpler.
In another embodiment, the overhang structure 5 includes an upper portion and a lower portion that are connected to each other. The materials of the upper and lower portions may or may not be the same. The material of the upper part and the material of the lower part may be at least one of a non-conductive inorganic material and a non-conductive organic material.
When the cathode auxiliary layer 4 is provided in the same layer as the anode electrode 21, the metal layer 91 forming the cathode auxiliary layer 4 and the anode electrode 21 can be provided to be wider and larger in size, and the size of the region of the cathode auxiliary layer 4 in contact with the cathode electrode 23 can be controlled by the pixel defining layer 3. By arranging the cathode auxiliary layer 4 and the anode electrode 21 in the same layer, and the overhang structure 5 adopts a single-layer structure and is directly arranged on the surface of the cathode auxiliary layer 4, the thickness of the display panel can be reduced.
In order to facilitate the contact between the cathode electrode 23 and the cathode auxiliary layer 4, the risk of breakage of the cathode electrode 23 is reduced. In an embodiment, referring to fig. 3, the anode electrode 21 and the cathode auxiliary layer 4 are provided in a non-same layer, eliminating the step structure between the pixel defining layer 3 and the cathode auxiliary layer 4, facilitating the contact between the cathode electrode 23 and the cathode auxiliary layer 4.
Specifically, referring to fig. 3, the anode electrode 21 is disposed between the pixel defining layer 3 and the substrate 1, and the second opening 32 exposing the anode electrode 21 is disposed on the pixel defining layer 3. The cathode auxiliary layer 4 is arranged on the side of the pixel defining layer 3 remote from the substrate 1. I.e. the distance between the cathode auxiliary layer 4 and the substrate 1 is larger than the distance between the anode electrode 21 and the substrate 1. Specifically, the cathode auxiliary layer 4 is in contact with the pixel defining layer 3. Wherein the orthographic projection of the cathode auxiliary layer 4 on the substrate 1 and the orthographic projection of the anode electrode 21 on the substrate 1 are mutually spaced.
In an embodiment, the overhang structure 5 is disposed on a surface of the cathode auxiliary layer 4 remote from the substrate 1, and the overhang structure 5 is in contact with the cathode auxiliary layer 4. Wherein the width of the overhang structure 5 gradually increases in a direction from the bottom to the top of the second opening 32. For example, the vertical section of the overhang structure 5 is an inverted trapezoidal structure.
Wherein the area of the lower surface 52 of the overhang structure 5 is smaller than the area of the surface of the cathode auxiliary layer 4 contacting the overhang structure 5.
In this embodiment, the overhang structure 5 is a single-layer structure. In particular, the material of the overhang structure 5 may be a non-conductive organic material. Wherein the non-conductive organic material comprises a negative photosensitive organic material. For example, negative photosensitive organic materials include, but are not limited to, negative photoresist.
In an embodiment, the orthographic projection of the overhang structure 5 onto the pixel defining layer 3 covers the orthographic projection of the cathode auxiliary layer 4 onto the pixel defining layer 3.
In another embodiment, the encapsulating layer 6 is disposed on a surface of the cathode electrode 23 away from the light emitting layer 22, such that the encapsulating layer 6 covers the exposed surfaces of the sub-pixels 2 and the overhang structure 5. Specifically, the encapsulation layer 6 covers the exposed surface of the cathode electrode 23 and extends along the sidewalls 53 of the overhang structure 5 such that the encapsulation layer 6 encapsulates the exposed surface of the overhang structure 5. The encapsulation layer 6 comprises a non-conductive inorganic material, wherein the non-conductive inorganic material comprises a silicon-containing material. The silicon-containing material may include Si-containing 3 N 4 A material.
In this embodiment, the light-emitting layer 22, the cathode electrode 23 and the encapsulation layer 6 are sequentially stacked one on another by vapor deposition.
In an embodiment, the display panel 100 further includes a filling layer 7 and a cover plate 8, where the filling layer 7 fills in the concave area of each sub-pixel 2, so that the surface of the sub-pixel 2 away from the substrate 1 forms a plane, and the cover plate 8 is convenient for covering the surface of the sub-pixel 2. Wherein, the material of the filling layer 7 is transparent material. The cover 8 may be a glass cover or a plastic film such as PET.
The display panel provided by the embodiment comprises a substrate, a plurality of sub-pixels, a pixel limiting layer, a cathode auxiliary layer and an overhang structure; the plurality of sub-pixels are arranged on the substrate; each sub-pixel comprises an anode electrode, a light-emitting layer and a cathode electrode which are sequentially stacked on a substrate; the pixel limiting layer is arranged on the substrate and limits the positions of the plurality of sub-pixels; the cathode auxiliary layer is arranged on the substrate and is positioned between two adjacent sub-pixels; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer; the overhang structure is arranged on one side of the cathode auxiliary layer away from the substrate and is positioned between two adjacent sub-pixels. According to the application, the overhang structure is arranged on one side of the cathode auxiliary layer far away from the substrate, so that the adjacent overhang structure can further limit the sub-pixels, and the overhang structure can replace a metal mask plate in the prior art, so that the cost can be saved, and the resolution of the display panel can be further improved.
Referring to fig. 4, fig. 4 is a flow chart of a method for manufacturing a display panel according to the present invention.
The method for manufacturing the display panel 100 according to the embodiment includes the following steps.
S1: an anode electrode, a pixel defining layer, and a cathode auxiliary layer are formed on the substrate.
S2: and coating a negative photoresist layer on one side of the cathode auxiliary layer away from the substrate.
S3: and forming a third opening on the negative photoresist layer by means of exposure and development, wherein the third opening exposes the anode electrode, and the side wall of the third opening forms an overhang structure.
S4: and depositing a light-emitting layer and a cathode electrode on one side of the anode electrode far away from the substrate, wherein the cathode electrodes of two adjacent sub-pixels are electrically connected through a cathode auxiliary layer.
In this embodiment, the overhang structure made of the negative photoresist layer is disposed on the side, far away from the substrate, of the cathode auxiliary layer, so that the adjacent overhang structure can further define the light-emitting layer, and the overhang structure can replace the metal mask plate in the prior art, so that the cost can be saved, and the resolution of the display panel can be further improved.
Referring to fig. 5 and fig. 6 (a) to fig. 6 (v), fig. 5 is a schematic flow chart of an embodiment of a method for manufacturing a display panel according to the present invention; fig. 6 (a) -6 (v) are schematic structural diagrams corresponding to each step in the method for manufacturing the display panel provided in fig. 5.
In one embodiment, the display panel 100, which has the anode electrode 21 and the cathode auxiliary layer 4 arranged in the same layer, specifically includes the following steps.
S11: a metal layer is disposed on the substrate.
Specifically, the substrate 1 is obtained. Wherein the base plate 1 comprises a substrate 11 and a driving circuit layer 12. The display panel 100 having the substrate 11 and the driving circuit layer 12 is an active OLED.
In another embodiment, the substrate 1 comprises a substrate 11. The display panel 100 having the substrate 11 but not including the driving circuit layer 12 is a passive OLED.
Wherein the substrate 11 may be a glass substrate; a flexible substrate may be used, wherein the material of the flexible substrate is Polyimide (PI). The driving circuit layer 12 may be a TFT circuit layer for driving the light emitting layer 22 of the OLED. The TFT circuit layer includes a plurality of TFT devices arranged in an array, and the TFT devices are arranged in one-to-one correspondence with the light emitting layers 22. The TFT device is of a low temperature polysilicon (Low Temperature Poly-silicon, LTPS) type, or a Metal oxide semiconductor (Metal-Oxide Semiconductor, MOS) type, for example, a Metal oxide semiconductor type of Indium Gallium Zinc Oxide (IGZO).
The display panel 100 in this embodiment will be described in detail by taking an active OLED as an example.
The surface of the driving circuit layer 12 remote from the substrate 11 is covered with a metal layer 91 as shown in fig. 6 (a). The material of the metal layer 91 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.
S12: and etching the metal layer to obtain a cathode auxiliary layer and an anode electrode which are mutually spaced.
Specifically, the metal layer 91 is patterned by wet etching or dry etching to obtain the cathode auxiliary layer 4 and the anode electrode 21 spaced apart from each other, as shown in fig. 6 (b). Wherein the dry etching includes laser etching or plasma etching. Wet etching includes chemical etching.
S13: a pixel defining layer is formed on a side of the cathode auxiliary layer and the anode electrode remote from the substrate.
Specifically, the pixel defining layer 3 is formed on the side of the cathode auxiliary layer 4 and the anode electrode 21 away from the substrate 1, as shown in fig. 6 (c). Wherein the material of the pixel defining layer 3 may be one of an organic material, an organic material having an inorganic coating layer provided thereon, or an inorganic material. The organic material of the pixel defining layer 3 includes, but is not limited to, polyimide. The inorganic material of the pixel defining layer 3 includes, but is not limited to, silicon oxide (SiO 2 ) Silicon nitride (Si) 3 N 4 ) Silicon oxynitride (Si) 2 N 2 O), magnesium fluoride (MgF) 2 ) Or a combination thereof.
S14: first and second openings spaced apart from each other are formed on the pixel defining layer.
Specifically, a mask is coated on the surface of the pixel defining layer 3 away from the substrate 1, and first and second openings 31 and 32 are formed on the pixel defining layer 3 at intervals by dry etching, so that the cathode auxiliary layer 4 is exposed through the first opening 31 and the anode electrode 21 is exposed through the second opening 32, as shown in fig. 6 (d). And removing the mask plate. Wherein the pixel defining layer 3 defines an anode electrode 21 to form a sub-pixel 2.
S15: and coating a negative photoresist layer on one side of the cathode auxiliary layer away from the substrate.
Specifically, a negative photoresist layer 94 is disposed on the side of the cathode auxiliary layer 4 away from the substrate 1, and the negative photoresist layer 94 fills the first opening 31 and the second opening 32. The surface of the negative photoresist layer 94 on the side away from the substrate 1 is planar as shown in fig. 6 (e).
S16: the negative photoresist layer is made into an overhang structure by means of exposure and development.
Specifically, during the exposure process, the irradiated portions of the negative photoresist layer 94 are polymerized and cross-linked to cure, and the non-irradiated portions are not cross-linked to polymerize. The surface of the negative photoresist layer 94 is more easily polymerized and crosslinked, the light intensity of the portion of the negative photoresist layer 94 away from the surface is gradually reduced, and the degree of polymerized and crosslinked of the negative photosensitive material is gradually reduced from the surface to the direction away from the surface of the negative photoresist layer 94. During the development process, the negative photoresist that has not undergone cross-linking polymerization is washed out.
A mask plate is covered on the surface of the side, far away from the substrate 1, of the negative photoresist layer 94, and the exposed negative photoresist layer 94 is subjected to cross-linking polymerization by illumination, and the negative photoresist layer 94 of the unexposed part is not polymerized. After the preset time of illumination, the negative photoresist that is not polymerized and crosslinked is removed by a developing solution, so as to obtain an inverted trapezoid suspension structure 5, and a gap 54 is formed between the sidewall 53 of the suspension structure 5 and the pixel defining layer 3, as shown in fig. 6 (f).
S17: a light emitting layer, a cathode electrode and an encapsulation layer are deposited on the side of the anode electrode remote from the substrate.
Specifically, since the colors of the light emitted from the different sub-pixels 2 are different, the materials of the light emitting layers 22 in the different sub-pixels 2 are different, and it is necessary to manufacture the sub-pixels 2 that emit the light of different colors in different steps. The light emitting layer 22 includes, but is not limited to, a red light emitting layer 2012, a green light emitting layer 2022, and a blue light emitting layer 2032. The order of the specifically formed red light emitting layer 2012, green light emitting layer 2022, and blue light emitting layer 2032 is set according to the actual situation. For example, the red light emitting layer 2012 is formed first, the green light emitting layer 2022 is formed then, and the blue light emitting layer 2032 is formed finally.
In the following examples, a sub-pixel 2 emitting red light was prepared, then a sub-pixel 2 emitting green light was prepared, and finally a sub-pixel 2 emitting blue light was prepared. Here, the sub-pixel 2 where the red light emitting layer 2012 is prepared is collectively referred to as a first sub-pixel 201, the sub-pixel 2 where the green light emitting layer 2022 is prepared is collectively referred to as a second sub-pixel 202, and the sub-pixel 2 where the blue light emitting layer 2032 is prepared is collectively referred to as a third sub-pixel 203.
In one embodiment, before the red light emitting layer 22 is formed in the first sub-pixel 201, the second sub-pixel 202 and the third sub-pixel 203 are filled with the buffer layer 95, and the buffer layer 95 is used to protect the anode electrode 21 in the second sub-pixel 202 and the anode electrode 21 in the third sub-pixel 203, as shown in fig. 6 (g). The material of the buffer layer 95 may be silicon nitride. Wherein the thickness of the buffer layer 95 in the third sub-pixel 203 is greater than the thickness of the buffer layer 95 of the second sub-pixel 202.
First, a red light-emitting layer 2012 is formed by vapor deposition of a red organic light-emitting material, and the red light-emitting layer 2012 is formed on the surface of the anode electrode 21 on the side remote from the substrate 1. The red light emitting layer 2012 covers the surface of the overhang structure 5 facing away from the substrate 1 and the exposed surface of the anode electrode 21 in the first sub-pixel 201, the exposed surface of the buffer layer 95 in the second sub-pixel 202 and the third sub-pixel 203.
Then, a metal material is vapor-deposited to form a first cathode electrode 2011, and the first cathode electrode 2011 is formed on a surface of the red light-emitting layer 2012 remote from the substrate 1. The first cathode electrode 2011 covers the red light emitting layer 2012 on the overhang structure 5 and the red light emitting layer 2012 on the anode electrode 21, and the first cathode electrode 2011 on the corresponding red light emitting layer 2012 of the anode electrode 21 extends along the pixel defining layer 3 into contact with the exposed cathode auxiliary layer 4 in the gap 54 formed between the overhang structure 5 and the pixel defining layer 3.
Finally, the inorganic silicon-containing material is evaporated to form a first encapsulation layer 2013, and the first encapsulation layer 2013 is formed on a surface of the first cathode electrode 2011, which is far away from the substrate 1. The first encapsulant layer 2013 covers the first cathode electrode 2011 and all exposed surfaces of the overhang structure 5, so as to obtain a first subpixel 201 capable of emitting red light, as shown in fig. 6 (h).
In order to protect the first sub-pixel 201, the first protection layer 2014 is filled in the first sub-pixel 201, so that the first protection layer 2014 fills the recessed region of the first sub-pixel 201 and covers the exposed surface of the first encapsulation layer 2013 on the overhang structure 5 on both sides of the first sub-pixel 201, as shown in fig. 6 (i).
The first encapsulation layer 2013, the first cathode electrode 2011, and the red light emitting layer 2012, on which the first protection layer 2014 is not disposed, on the second sub-pixel 202, the third sub-pixel 203, and the overhang structure 5 are removed entirely by dry etching or wet etching, so that the buffer layer 95 in the second sub-pixel 202 and the third sub-pixel 203 is exposed, as shown in fig. 6 (j).
The buffer layer 95 in the second subpixel 202 is removed by dry etching to expose the anode electrode 21 in the second subpixel 202. Meanwhile, the buffer layer 95 in the third subpixel 203 is thinned as shown in fig. 6 (k).
The first protective layer 2014 is removed by dry etching or wet etching, so that the first encapsulation layer 2013 is entirely exposed, as shown in fig. 6 (l).
First, a green light-emitting layer 2022 is formed by vapor deposition of a green organic light-emitting material, and the green light-emitting layer 2022 is formed on the side of the anode electrode 21 remote from the substrate 1.
Then, a second cathode electrode 2021 is formed by vapor deposition of a metal material, and the second cathode electrode 2021 is formed on a side surface of the green light-emitting layer 2022 away from the substrate 1.
Finally, the inorganic silicon-containing material is formed into a second encapsulation layer 2023 by vapor deposition, and the second encapsulation layer 2023 is formed on the surface of the second cathode electrode 2021 on the side away from the substrate 1. The second encapsulation layer 2023 covers the second cathode electrode 2021 and all exposed surfaces of the overhang structure 5, thereby making the second subpixel 202 capable of emitting green light as shown in fig. 6 (m).
To protect the second sub-pixel 202, the second protection layer 2024 is filled in the second sub-pixel 202, so that the second protection layer 2024 fills the recessed region of the second sub-pixel 202 and covers the exposed surface of the portion of the second encapsulation layer 2023 on the overhang structure 5 on both sides of the second sub-pixel 202, as shown in fig. 6 (n).
The second encapsulation layer 2023, the second cathode electrode 2021, and the green light-emitting layer 2022 on the first sub-pixel 201, the third sub-pixel 203, and the overhang structure 5 where the second protection layer 2024 is not disposed are all removed by dry etching or wet etching, so that the buffer layer 95 in the first encapsulation layer 2013 and the third sub-pixel 203 is exposed, as shown in fig. 6 (o).
The second protective layer 2024 is removed by dry etching or wet etching so that the second encapsulation layer 2023 is entirely exposed, as shown in fig. 6 (p).
The buffer layer 95 in the third sub-pixel 203 is removed by dry etching to expose the anode electrode 21 in the third sub-pixel 203 as shown in fig. 6 (q).
First, a blue light emitting layer 2032 is formed by vapor deposition of a blue organic light emitting material, and the blue light emitting layer 2032 is formed on the side of the anode electrode 21 away from the substrate 1.
Then, a third cathode electrode 2031 is formed by vapor deposition of a metal material, and the third cathode electrode 2031 is formed on the side of the blue light-emitting layer 2032 away from the substrate 1.
Finally, the inorganic silicon-containing material is formed into a third encapsulation layer 2033 by vapor deposition, and the third encapsulation layer 2033 is formed on the surface of the third cathode electrode 2031 on the side away from the substrate 1. The third encapsulation layer 2033 covers the third cathode electrode 2031 and all exposed surfaces of the overhang structure 5, thereby producing a third subpixel 203 that can emit blue light as shown in fig. 6 (r).
In order to protect the third sub-pixel 203, a third protection layer 2034 is filled in the third sub-pixel 203 such that the third protection layer 2034 fills the recessed region of the third sub-pixel 203 and the exposed surface of the third encapsulation layer 2033 covering the upper portion of the overhang structure 5 on both sides of the third sub-pixel 203, as shown in fig. 6(s).
The first sub-pixel 201, the second sub-pixel 202, and the third encapsulation layer 2033, the third cathode electrode 2031, and the blue light emitting layer 2032 on the overhang structure 5 where the third protection layer 2034 is not provided are all removed by dry etching or wet etching, so that the first encapsulation layer 2013 and the second encapsulation layer 2023 are exposed, as shown in fig. 6 (t).
The third protective layer 2034 in the third subpixel 203 is removed by dry etching to expose the third encapsulation layer 2033 in the third subpixel 203 as shown in fig. 6 (u).
Wherein the first cathode electrode 2011 in the first sub-pixel 201 is conducted with the second cathode electrode 2021 in the second sub-pixel 202 through the cathode auxiliary layer 4 between the first sub-pixel 201 and the second sub-pixel 202, the second cathode electrode 2021 in the second sub-pixel 202 is conducted with the third cathode electrode 2031 in the third sub-pixel 203 through the cathode auxiliary layer 4 between the second sub-pixel 202 and the third sub-pixel 203, and the first cathode electrode 2011 in the first sub-pixel 201 is conducted with the third cathode electrode 2031 in the third sub-pixel 203 through the cathode auxiliary layer 4 between the first sub-pixel 201 and the third sub-pixel 203.
A filling layer 7 is disposed on a side of the first sub-pixel 201, the second sub-pixel 202, and the third sub-pixel 203 away from the substrate 1, such that the filling layer 7 fills the concave regions of the first sub-pixel 201, the second sub-pixel 202, and the third sub-pixel 203, and a surface of the filling layer 7 on the side away from the substrate 1 is a plane. A cover plate 8 is disposed on a side surface of the filling layer 7 remote from the substrate 1 to cover the first sub-pixel 201, the second sub-pixel 202, and the third sub-pixel 203, as shown in fig. 6 (v). Wherein, the material of the filling layer 7 is transparent material. The cover 8 may be a glass cover 8, or may be a plastic film such as PET.
Referring to fig. 7 and fig. 8 (a) to fig. 8 (f), fig. 7 is a schematic flow chart of another embodiment of a method for manufacturing a display panel according to the present invention; fig. 8 (a) -8 (f) are schematic structural diagrams corresponding to each step in the method for manufacturing the display panel provided in fig. 7.
In one embodiment, the display panel 100, which has the anode electrode 21 and the cathode auxiliary layer 4 arranged in the same layer, specifically includes the following steps.
S21: a metal layer is disposed on the substrate.
S22: and etching the metal layer to obtain a cathode auxiliary layer and an anode electrode which are mutually spaced.
S23: a pixel defining layer is formed on a side of the cathode auxiliary layer and the anode electrode remote from the substrate.
Specifically, the specific implementation of steps S21 to S23 in this embodiment is the same as steps S11 to S13 in the above embodiment, and will not be described here again.
S24: first and second via holes are formed on the pixel defining layer to expose a portion of the cathode auxiliary layer.
Specifically, the first via hole 33 and the second via hole 34 spaced apart from each other are formed on the pixel defining layer 3 by dry etching. The first via hole 33 and the second via hole 34 may be plural. A set of first via holes 33 and second via holes 34 corresponds to the same cathode auxiliary layer 4, so that part of the surface of the same cathode auxiliary layer 4 is exposed, as shown in fig. 8 (a). The projection of the first via 33 and the second via 34 onto the substrate 1 does not exceed the projection of the cathode auxiliary layer 4 onto the substrate 1.
S25: a negative photoresist layer is coated on the side of the pixel defining layer remote from the substrate.
Specifically, a negative photoresist layer 94 is disposed on the side of the pixel defining layer 3 away from the substrate 1, and the negative photoresist layer 94 fills the first via hole 33 and the second via hole 34. The surface of the negative photoresist layer 94 on the side away from the substrate 1 is planar as shown in fig. 8 (b).
S26: the negative photoresist layer is made into an overhang structure by means of exposure and development.
Specifically, as shown in fig. 8 (c), the specific implementation of step S26 in this embodiment is the same as step S16 in the above embodiment, and will not be described here again.
S27: a second opening is formed on the pixel defining layer such that the anode electrode is exposed through the second opening.
Specifically, as shown in fig. 8 (d), the specific implementation of step S27 in this embodiment is the same as step S14 in the above embodiment, and will not be described here again.
S28: and sequentially depositing a light-emitting layer, a cathode electrode and an encapsulation layer on one side of the anode electrode, which is far away from the substrate.
Specifically, as shown in fig. 8 (e), the specific implementation of step S28 in this embodiment is the same as step S17 in the above embodiment, and will not be described here again.
In another embodiment, the step S24 may be: the first via hole 33, the second via hole 34, and the second opening 32 are formed on the pixel defining layer 3 such that a part of the cathode auxiliary layer 4 is exposed through the first via hole 33, the second via hole 34, and the anode electrode 21 is exposed through the second opening 32, as shown in fig. 8 (f). Thereafter, the steps S25, S26 and S28 are sequentially performed.
Referring to fig. 9 and fig. 10 (a) to fig. 10 (g), fig. 9 is a schematic flow chart of another embodiment of a method for manufacturing a display panel according to the present invention; fig. 10 (a) -10 (g) are schematic structural diagrams corresponding to each step in the method for manufacturing the display panel provided in fig. 9.
In one embodiment, the display panel 100, which has the anode electrode 21 and the cathode auxiliary layer 4 disposed in a non-uniform layer, specifically includes the following steps.
S31: a first metal layer is disposed on a substrate.
Specifically, the substrate 1 is obtained. Wherein the base plate 1 comprises a substrate 11 and a driving circuit layer 12. The display panel 100 having the substrate 11 and the driving circuit layer 12 is an active OLED. In another embodiment, the substrate 1 comprises a substrate 11. The display panel 100 having the substrate 11 but not including the driving circuit layer 12 is a passive OLED.
The display panel 100 in this embodiment will be described in detail by taking an active OLED as an example.
The surface of the driving circuit layer 12 remote from the substrate 11 is covered with a first metal layer 92 as shown in fig. 10 (a). The material of the first metal layer 92 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.
S32: and etching the first metal layer to obtain the anode electrode.
Specifically, the specific implementation of forming the anode electrode 21 in the step S32 in the present embodiment is the same as the specific implementation of forming the anode electrode 21 in the step S12 in the above embodiment, as shown in fig. 10 (b), and will not be repeated here.
S33: a pixel defining layer and a second metal layer are sequentially formed on a side of the anode electrode away from the substrate.
Specifically, the specific implementation manner of forming the pixel defining layer 3 in this embodiment is the same as that of forming the pixel defining layer 3 in the above step S13, as shown in fig. 10 (c), and will not be described herein.
The second metal layer 93 is covered on a side surface of the pixel defining layer 3 remote from the substrate 1 as shown in fig. 10 (d). The material of the second metal layer 93 may be the same as or different from the material of the first metal layer 92.
S34: and patterning the second metal layer to obtain the cathode auxiliary layer.
Specifically, the embodiment of forming the cathode auxiliary layer 4 in step S34 in the present embodiment is the same as the embodiment of forming the cathode auxiliary layer 4 in step S12 in the above embodiment, as shown in fig. 10 (e), and will not be repeated here.
S35: a second opening is formed on the exposed pixel defining layer to expose the anode electrode.
Specifically, the embodiment of forming the second opening 32 in step S35 in the present embodiment is the same as the embodiment of forming the second opening 32 in step S14 in the above embodiment, as shown in fig. 10 (f), and will not be described herein.
S36: and coating a negative photoresist layer on one side of the cathode auxiliary layer away from the substrate.
S37: the negative photoresist layer is made into an overhang structure by means of exposure and development.
S38: a light emitting layer and a cathode electrode are deposited on a side of the anode electrode remote from the substrate.
Specifically, the specific implementation manner of step S37 and step S38 in this embodiment is the same as the specific implementation manner of step S16 and step S17 in the above embodiment, as shown in fig. 10 (g), and will not be described herein.
According to the preparation method of the display panel, the overhang structure is arranged on the side, far away from the substrate, of the cathode auxiliary layer, so that the adjacent overhang structure can further limit the sub-pixels, the overhang structure can replace a metal mask plate in the prior art, cost can be saved, and resolution of the display panel can be further improved.
The foregoing is only the embodiments of the present invention, and therefore, the patent protection scope of the present invention is not limited thereto, and all equivalent structures or equivalent flow changes made by the content of the present specification and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the patent protection scope of the present invention.
Claims (10)
1. A display panel, comprising:
a substrate;
a plurality of sub-pixels disposed on the substrate; each sub-pixel comprises an anode electrode, a light-emitting layer and a cathode electrode which are sequentially stacked on the substrate;
a pixel defining layer disposed on the substrate and defining positions of the plurality of sub-pixels;
the cathode auxiliary layer is arranged on the substrate and is positioned between two adjacent sub-pixels; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer;
and the overhang structure is arranged on one side of the cathode auxiliary layer away from the substrate and is positioned between two adjacent sub-pixels.
2. The display panel of claim 1, wherein the overhang structure is a single layer of negative photoresist layer and is disposed on a surface of the cathode auxiliary layer remote from the substrate.
3. The display panel of claim 2, wherein the anode electrode is disposed between the pixel defining layer and the substrate, the cathode auxiliary layer is disposed on a side of the pixel defining layer away from the substrate, and the overhang structure is disposed on a surface of the cathode auxiliary layer away from the substrate.
4. The display panel according to claim 1, wherein the anode electrode and the cathode auxiliary layer are co-layer disposed between the pixel defining layer and the substrate, the pixel defining layer having a first opening exposing the cathode auxiliary layer; the cathode electrodes of two adjacent sub-pixels are in contact with the cathode auxiliary layer through the first openings.
5. The display panel according to claim 4, wherein a part of the overhang structure is disposed in the first opening and located on a surface of the cathode auxiliary layer away from the substrate, and another part protrudes from the first opening; a gap is arranged between the overhang structure and the side face of the first opening, and the cathode electrodes of two adjacent sub-pixels are contacted with the cathode auxiliary layer through the gap.
6. The display panel of claim 5, wherein a projection of the overhang structure onto the pixel defining layer covers the first opening.
7. The display panel of claim 5, wherein a width of the first opening and a width of the overhang structure each gradually increase in a direction from a bottom to a top of the first opening.
8. The display panel of claim 7, wherein the width of the gap gradually decreases along a direction from the bottom to the top of the first opening along the side of the first opening.
9. The preparation method of the display panel is characterized by comprising the following steps of:
forming an anode electrode, a pixel defining layer, and a cathode auxiliary layer on a substrate;
coating a negative photoresist layer on one side of the cathode auxiliary layer far away from the substrate;
forming a third opening on the negative photoresist layer by means of exposure and development; the third opening exposes the anode electrode, and the side wall of the third opening forms an overhang structure;
depositing a light-emitting layer and a cathode electrode on one side of the anode electrode away from the substrate; the cathode electrodes of two adjacent sub-pixels are electrically connected through the cathode auxiliary layer.
10. The method of manufacturing a display panel according to claim 9, wherein the step of forming the anode electrode, the pixel defining layer, and the cathode auxiliary layer on the substrate comprises:
providing a metal layer on a substrate;
etching the metal layer to obtain the cathode auxiliary layer and the anode electrode which are mutually spaced;
Forming the pixel defining layer on a side of the cathode auxiliary layer and the anode electrode away from the substrate;
first and second openings spaced apart from each other are formed on the pixel defining layer such that the cathode auxiliary layer is exposed through the first opening and the anode electrode is exposed through the second opening.
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| CN117615605A (en) * | 2023-10-31 | 2024-02-27 | 惠科股份有限公司 | Display panel and manufacturing method thereof |
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