CN116871985A - Polishing process of small-size high-frequency piezoelectric wafer - Google Patents
Polishing process of small-size high-frequency piezoelectric wafer Download PDFInfo
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- CN116871985A CN116871985A CN202311133899.XA CN202311133899A CN116871985A CN 116871985 A CN116871985 A CN 116871985A CN 202311133899 A CN202311133899 A CN 202311133899A CN 116871985 A CN116871985 A CN 116871985A
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- 238000007517 polishing process Methods 0.000 title claims abstract description 19
- 238000005498 polishing Methods 0.000 claims abstract description 174
- 235000012431 wafers Nutrition 0.000 claims abstract description 99
- 239000007788 liquid Substances 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 239000004576 sand Substances 0.000 claims abstract description 14
- 230000001680 brushing effect Effects 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000007781 pre-processing Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 25
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 6
- RYYKJJJTJZKILX-UHFFFAOYSA-M sodium octadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCCCC([O-])=O RYYKJJJTJZKILX-UHFFFAOYSA-M 0.000 claims description 6
- 238000009996 mechanical pre-treatment Methods 0.000 claims description 5
- -1 isopropanol amide Chemical class 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000035939 shock Effects 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000227 grinding Methods 0.000 abstract description 15
- 239000012634 fragment Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 description 6
- 238000012797 qualification Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000306 component Substances 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- XUWVIABDWDTJRZ-UHFFFAOYSA-N propan-2-ylazanide Chemical compound CC(C)[NH-] XUWVIABDWDTJRZ-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/007—Weight compensation; Temperature compensation; Vibration damping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The invention discloses a polishing process of a small-size high-frequency piezoelectric wafer, and belongs to the technical field of polishing. The invention comprises the following steps: preparing a 6B polishing machine, a polishing loose pulley and polishing liquid; chamfering the wafer, and preprocessing the chamfered wafer; using pure water with resistivity exceeding 15MΩ to clean the surface of the polishing disk and the polishing loose pulley; uniformly placing the polishing loose wheels in a polishing disc according to the gear positions, so that the polishing loose wheels are fully immersed in the polishing liquid; brushing the wafer evenly by using a brush; polishing by a 6B polishing machine; lifting the upper disc, collecting the wafer, placing the wafer in DZ-2 cleaning solution, cleaning and drying to finish polishing. The invention realizes the mass production of small-size high-frequency wafers with the length of 1-2mm, the width of 0.5-2mm and the frequency of 40-96M, has high reliability, and reduces the phenomena of running wheels, running sheets, fragments and grinding sheets, thereby reducing various quality problems such as sand marks, broken edges and the like, and is suitable for mass production.
Description
Technical Field
The invention relates to the technical field of polishing processes, in particular to a polishing process of a small-size high-frequency piezoelectric wafer.
Background
In recent years, with the rapid development of science and technology, the requirements on miniaturization and high frequency of the constant temperature crystal oscillator in the market are increasing, and the size of the constant temperature crystal oscillator is particularly important as an important clock element. Quartz wafers are a core component of high-precision quartz crystal oscillators, and thus, downsizing to improve performance is an urgent task.
The performance of the quartz wafer directly affects important indexes such as quartz crystal frequency, Q value, phase noise and the like, and polishing plays a decisive role in the final surface flatness and roughness in the production process.
At present, the polishing appearance is generally 5-15 mm in industry, and the frequency is below 40M. For small-size high-frequency wafers with the length of 1-2mm and the width of 0.5-2mm and the frequency of 40-96M, no mature process exists, because the wafer size is too small, the conditions of small broken edges and even broken pieces on the edge are often caused, the polishing is improper, the angle deviation is large, the dispersion is large, the final index of the resonator is influenced, and meanwhile, the problems of a running wheel, a running piece, fragments, a grinding piece and the like are easily caused because the wafer size is too small, so that the wafer is scrapped. Therefore, the traditional process is only used for samples or small-batch experiments, and cannot be used for mass production.
Disclosure of Invention
In view of the above, the invention provides a polishing process for small-size high-frequency piezoelectric wafers, which improves the qualification rate of quartz wafer polishing, reduces the damage to the surface of the quartz wafers, improves the production efficiency, reduces the cost, solves the problem that small-size high-frequency piezoelectric crystals cannot be polished in batches, and provides a solid foundation for the production of small-size high-precision high-frequency piezoelectric crystal oscillators.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a polishing process of a small-size high-frequency piezoelectric wafer is used for polishing a piezoelectric wafer with the length of 1-2mm, the width of 0.5-2mm and the frequency of 40M-96M, and comprises the following steps:
step one, preparing a 6B polishing machine, a polishing loose pulley and polishing liquid, wherein the 6B polishing machine comprises a mechanical rotation part, a polishing disc and a polishing pad; performing vacuum heat pretreatment on a polishing loose pulley, a polishing pad and a polishing disk respectively, performing mechanical pretreatment on the polishing pad, adhering the polishing pad on the polishing disk, and mounting the polishing disk on a mechanical rotation part of a 6B polishing machine;
chamfering the wafer, and then preprocessing the chamfered wafer so as to remove particles on the surface of the wafer and realize micro corrosion and infiltration on the surface of the wafer;
step three, using pure water with resistivity exceeding 15MΩ to clean the surface of the polishing disk and the polishing loose pulley;
uniformly placing the polishing loose pulley in the polishing disc according to the gear position, brushing the polishing loose pulley with polishing liquid for one time by using a brush, and removing gaps between the polishing loose pulley and the polishing disc to enable the polishing loose pulley to be fully immersed in the polishing liquid;
step five, brushing the wafers evenly by using a hairbrush, and ensuring that each wafer is placed in a loose pulley hole of a polishing loose pulley;
step six, polishing is carried out by adopting a 6B polishing machine, the upper disc and the lower disc of the polishing machine adopt polyurethane polishing films, the polishing machine starts accelerating from rest, the rotating speed is increased to 20rpm at the speed of increasing 2rpm per minute, the rotating speed is kept, a polishing liquid outlet valve is regulated, and the flow rate of the polishing liquid is kept at 5 drops/min until the polishing is finished;
and step seven, lifting the upper disc, collecting the wafers, placing the wafers in DZ-2 cleaning solution, cleaning and drying the wafers, and finishing polishing.
Further, the process of vacuum heat pretreatment of the polishing loose pulley, the polishing pad and the polishing disk is that the temperature is raised to 180 ℃ from room temperature for 24 hours, the constant temperature is kept for 48 hours, then the temperature is lowered to 30 ℃ for 24 hours, finally the materials are taken out, and the whole process is vacuumized by a dry pump.
Further, the mechanical pretreatment process for the polishing pad comprises the steps of adopting a diamond finishing wheel to polish the upper polishing pad and the lower polishing pad, wherein the parameters are as follows: 10 kg pressure, 30 seconds, and 200 circles of upper and lower polishing pads.
Further, the polishing machine is arranged in a sand pile and subjected to levelness adjustment; when the polishing machine works, the shock absorption is realized through the sand pile.
Further, the wafer is chamfered in the following specific ways: four right-angle parts of the square quartz wafer are processed into chamfers of 0.1 mm-0.2 mm by picosecond laser.
Further, the wafer after chamfering is preprocessed in the following specific modes: soaking the wafer in 1% ammonium bifluoride solution for half an hour, cleaning with pure water, soaking in DZ-1 cleaning solution for 2 min, and cleaning with pure water; uniformly placing the wafers in a container, stacking the wafers without stacking, placing the container with the wafers in an oven at 150 ℃ for 24 hours, taking out the container after baking, washing the container again by using pure water, and placing the container in the oven for drying at 100 ℃ for 24 hours.
Further, the polishing solution is a sand-liquid mixture, wherein the sand contains cerium oxide with the content of 0.5 micrometer, and the liquid comprises isopropanol amide, sodium carbonate, sodium stearate and water, and the mass ratio of the isopropanol amide to the sodium carbonate to the water is 1:1:100; adding 5g of sodium stearate into each liter of liquid; the mass ratio of the sand to the liquid is 1:1.2, and the mixture is fully stirred for 3 hours.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a novel polishing technology, which uses a special pretreatment process, a polishing solution proportion and damping measures, and has the advantages of minimum damage to the appearance of a wafer in the polishing process, small probability of a grinding wheel, a running sheet, fragments and a grinding sheet, high polishing qualification rate and high production efficiency.
2. The wafer polished by the method has better Q index than the performance produced by the traditional method.
3. The method has the advantages of small damage to the inflection point parameters of the wafer, high angle consistency and high qualification rate.
Drawings
Fig. 1 is a schematic diagram of a piezoelectric wafer polishing process provided by the present invention.
Fig. 2 is a schematic diagram of main components of a polishing apparatus in a piezoelectric wafer polishing process according to the present invention.
Detailed Description
The technical scheme of the invention is further described in detail through the following specific embodiments.
A polishing process of a small-size high-frequency piezoelectric wafer is used for polishing a piezoelectric wafer with a length of 1-2mm, a width of 0.5-2mm and a frequency of 40M-96M, wherein a polishing process flow chart is shown in figure 1, and a main component diagram of polishing equipment is shown in figure 2. The specific process is as follows:
(1) The 6B polishing machine and the matching are prepared, the polishing machine mainly comprises a mechanical rotating part, a polishing disk and a polishing pad, and the matching comprises a polishing loose pulley and polishing liquid.
(2) Carrying out vacuum heat pretreatment on the polished loose pulley, and reducing stress of the polished loose pulley so as to reduce deformation in the polishing process of the loose pulley, thereby causing grinding of the loose pulley, running sheets, fragments, grinding sheets and the like;
(3) Performing vacuum heat pretreatment on the polishing pad to reduce the post-deformation of the polishing pad, thereby reducing wafer running, fragments and grinding caused by the deformation of the polishing pad in the polishing process;
(4) Mechanically pre-treating the polishing pad to make the surface of the polishing pad smoother in contact with the polishing liquid and the wafer, so as to reduce wafer running, fragments and grinding;
(5) Performing vacuum heat pretreatment on the polishing disk, and reducing the grinding wheel, the running piece, the fragments, the grinding piece and the like caused by the deformation of the polishing disk;
(6) Damping treatment is carried out on the polishing machine, so as to reduce running sheets, fragments and grinding sheets caused by micro-shaking of equipment;
after the pretreatment is finished, the polishing pad is stuck on a polishing disk, and the polishing disk is arranged on the mechanical rotation part of the polishing machine. When the polishing machine is used, a wafer is placed in the loose pulley hole, the mechanical rotating part of the polishing machine drives the polishing disc and the polishing loose pulley to rotate, and the polishing liquid plays roles in lubrication and polishing;
(7) Chamfering is carried out on the wafer, so that the wafer is smoother when rotating along with the loose pulley, and running, fragments and grinding are reduced;
(8) The wafer is pretreated, and the pretreatment liquid is used for treating the wafer and removing surface particles and the like, so that running, fragments and grinding caused by the surface particles are reduced. And meanwhile, the surface of the wafer is subjected to micro corrosion and infiltration treatment, so that the wafer is polished more smoothly in the initial stage of polishing, and the grinding caused by dryness easily occurring in the initial stage of polishing is reduced.
(9) Using pure water with resistivity exceeding 15MΩ to wash the surface of the polishing disk and the loose pulley clean;
(10) Uniformly placing the loose pulley in the polishing disc according to the gear position, brushing the polishing loose pulley with polishing liquid for one time by using a brush, and removing gaps between the polishing loose pulley and the polishing disc to enable the polishing loose pulley to be fully immersed in the polishing liquid;
(11) Brushing the wafers evenly by using a hairbrush to ensure that each wafer is placed in the loose pulley hole;
(12) Polishing by adopting a 6B polishing machine, wherein the upper disc and the lower disc of the polishing machine are both made of polyurethane polishing films, the polishing machine can accelerate from rest, the rotating speed is increased to 20rpm at a speed of increasing 2rpm per minute, the rotating speed is kept, and a polishing liquid outlet valve is regulated to keep the flow rate of the polishing liquid to be 5 drops/min until the polishing is finished;
(13) Lifting the upper disc, collecting the wafer, placing the wafer in DZ-2 cleaning solution, cleaning and drying to finish polishing.
Specifically, the vacuum heat pretreatment process of the polishing loose pulley, the polishing pad and the polishing disk is that the temperature is raised to 180 ℃ from the room temperature for 24 hours, the temperature is kept for 48 hours, the temperature is lowered to 30 ℃ for 24 hours, the polishing loose pulley, the polishing pad and the polishing disk are taken out, and the whole process is vacuumized by a dry pump.
Specifically, the polishing pad is subjected to a mechanical pretreatment process, namely, an upper polishing pad and a lower polishing pad are polished by adopting a diamond finishing wheel, the parameters are 10 kg of pressure, one circle is carried out for 30 seconds, and the upper polishing pad and the lower polishing pad are polished for 200 circles respectively.
Specifically, the shock absorption treatment is to place the polishing machine on a sand pile with the height of about 50cm for levelness adjustment.
Specifically, the wafer chamfering is to process four right-angle parts of a square quartz wafer into chamfering of 0.1 mm-0.2 mm by picosecond laser.
Specifically, the wafer pretreatment is to put the wafer into a 1% ammonium bifluoride solution, soak for half an hour, clean the wafer with pure water, soak the wafer in DZ-1 cleaning solution for 2 minutes, clean the wafer with pure water, uniformly place the wafer in a cleaning tool, stack the wafer without stacking, lay the wafer on the bottom of a container in a baking oven at 150 ℃ for 24 hours, take the wafer out after baking, rinse the wafer again with pure water, dry the wafer in the baking oven at 100 ℃ for 24 hours.
Specifically, the polishing solution is a sand-liquid mixture, wherein the sand contains cerium oxide with the composition of 0.5 micrometer, and the liquid comprises isopropylamide, sodium carbonate, sodium stearate and water, and the ratio mass of the isopropylamide to the sodium carbonate is that the water=1:1:100; 5g of sodium stearate per liter of liquid was added. The mass ratio of the sand to the liquid is 1:1.2, and the mixture is fully stirred for 3 hours.
The following table shows the data comparison of the present process with the conventional process:
it can be seen that the process is significantly superior to the conventional process. This is because, because the wafer size is too small and thin, the use of the traditional process often causes the situation that the edge has small broken edges and even splits, the polishing is improper, the angle deviation is large, the dispersion is large, the final index of the resonator is affected, and meanwhile, because the wafer size is too small and thin, the problems of a running wheel, a running sheet, fragments, a grinding sheet and the like are easily caused, various quality problems such as sand marks, broken edges and the like on the surface of the wafer are caused, the wafer is scrapped, and the batch production is not possible or the mass production can only be realized with low qualification rate. Therefore, the traditional process is only used for samples or small-batch experiments, and cannot be used for mass production.
The process reduces the phenomena of a running wheel, a running sheet, fragments and a rolling sheet, thereby reducing various quality problems such as sand marks, broken edges and the like, realizing the mass production of small-size high-frequency wafers with the length of 1-2mm, the width of 0.5-2mm and the frequency of 40-96M, having high reliability and being suitable for mass production. Because the process is stable in processing, the angle consistency and Q are improved.
Claims (7)
1. The polishing process of the small-size high-frequency piezoelectric wafer is characterized by being used for polishing the piezoelectric wafer with the length of 1-2mm, the width of 0.5-2mm and the frequency of 40M-96M, and comprising the following steps:
step one, preparing a 6B polishing machine, a polishing loose pulley and polishing liquid, wherein the 6B polishing machine comprises a mechanical rotation part, a polishing disc and a polishing pad; performing vacuum heat pretreatment on a polishing loose pulley, a polishing pad and a polishing disk respectively, performing mechanical pretreatment on the polishing pad, adhering the polishing pad on the polishing disk, and mounting the polishing disk on a mechanical rotation part of a 6B polishing machine;
chamfering the wafer, and then preprocessing the chamfered wafer so as to remove particles on the surface of the wafer and realize micro corrosion and infiltration on the surface of the wafer;
step three, using pure water with resistivity exceeding 15MΩ to clean the surface of the polishing disk and the polishing loose pulley;
uniformly placing the polishing loose pulley in the polishing disc according to the gear position, brushing the polishing loose pulley with polishing liquid for one time by using a brush, and removing gaps between the polishing loose pulley and the polishing disc to enable the polishing loose pulley to be fully immersed in the polishing liquid;
step five, brushing the wafers evenly by using a hairbrush, and ensuring that each wafer is placed in a loose pulley hole of a polishing loose pulley;
step six, polishing is carried out by adopting a 6B polishing machine, the upper disc and the lower disc of the polishing machine adopt polyurethane polishing films, the polishing machine starts accelerating from rest, the rotating speed is increased to 20rpm at the speed of increasing 2rpm per minute, the rotating speed is kept, a polishing liquid outlet valve is regulated, and the flow rate of the polishing liquid is kept at 5 drops/min until the polishing is finished;
and step seven, lifting the upper disc, collecting the wafers, placing the wafers in DZ-2 cleaning solution, cleaning and drying the wafers, and finishing polishing.
2. The process for polishing a small-sized high-frequency piezoelectric wafer according to claim 1, wherein the vacuum heat pretreatment of the polishing flywheel, the polishing pad and the polishing disk is carried out by heating to 180 ℃ for 24 hours from room temperature, maintaining the constant temperature for 48 hours, cooling to 30 ℃ for 24 hours, taking out, and vacuumizing by a dry pump in the whole process.
3. The process for polishing a small-sized high-frequency piezoelectric wafer according to claim 1, wherein the mechanical pretreatment of the polishing pad is performed by polishing the upper polishing pad and the lower polishing pad with diamond conditioner wheels, and the parameters are: 10 kg pressure, 30 seconds, and 200 circles of upper and lower polishing pads.
4. The polishing process of a small-sized high-frequency piezoelectric wafer according to claim 1, wherein the polishing machine is placed in a sand pile and subjected to levelness adjustment; when the polishing machine works, the shock absorption is realized through the sand pile.
5. The polishing process for a small-sized high-frequency piezoelectric wafer according to claim 1, wherein the wafer is chamfered in the following specific manner: four right-angle parts of the square quartz wafer are processed into chamfers of 0.1 mm-0.2 mm by picosecond laser.
6. The polishing process for a small-sized high-frequency piezoelectric wafer according to claim 1, wherein the wafer after chamfering is pretreated by: soaking the wafer in 1% ammonium bifluoride solution for half an hour, cleaning with pure water, soaking in DZ-1 cleaning solution for 2 min, and cleaning with pure water; uniformly placing the wafers in a container, stacking the wafers without stacking, placing the container with the wafers in an oven at 150 ℃ for 24 hours, taking out the container after baking, washing the container again by using pure water, and placing the container in the oven for drying at 100 ℃ for 24 hours.
7. The polishing process of the small-size high-frequency piezoelectric wafer according to claim 1, wherein the polishing solution is a sand-liquid mixture, wherein the sand comprises 0.5 micrometer cerium oxide, and the liquid comprises isopropanol amide, sodium carbonate, sodium stearate and water, and the mass ratio of the isopropanol amide to the sodium carbonate to the water is 1:1:100; adding 5g of sodium stearate into each liter of liquid; the mass ratio of the sand to the liquid is 1:1.2, and the mixture is fully stirred for 3 hours.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311133899.XA CN116871985B (en) | 2023-09-05 | 2023-09-05 | Polishing process of small-size high-frequency piezoelectric wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311133899.XA CN116871985B (en) | 2023-09-05 | 2023-09-05 | Polishing process of small-size high-frequency piezoelectric wafer |
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| CN116871985A true CN116871985A (en) | 2023-10-13 |
| CN116871985B CN116871985B (en) | 2023-12-01 |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020052064A1 (en) * | 2000-08-16 | 2002-05-02 | Alexis Grabbe | Method and apparatus for processing a semiconductor wafer using novel final polishing method |
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| CN1480305A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid |
| EP1475826A2 (en) * | 2003-05-06 | 2004-11-10 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor wafer and method of processing nitride semiconductor wafer |
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